CN1799195B - 低通滤波器和电子器件 - Google Patents

低通滤波器和电子器件 Download PDF

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CN1799195B
CN1799195B CN2004800153707A CN200480015370A CN1799195B CN 1799195 B CN1799195 B CN 1799195B CN 2004800153707 A CN2004800153707 A CN 2004800153707A CN 200480015370 A CN200480015370 A CN 200480015370A CN 1799195 B CN1799195 B CN 1799195B
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CN1799195A (zh
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阿德里安努斯·B·什莫尔德斯
尼古拉斯·J·普尔斯福特
阿德里安努斯·A·J·布吉斯曼
菲利普·帕斯卡尔
法塔赫·哈达德
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NXP BV
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03H7/01—Frequency selective two-port networks
    • H03H7/06—Frequency selective two-port networks including resistors
    • H—ELECTRICITY
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    • H03H7/01—Frequency selective two-port networks
    • H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
    • H—ELECTRICITY
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    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
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Abstract

本发明的电子器件(100)包括半导体器件(30)和低通滤波器(20)，它们存在于层叠结构中，并且它们合起来包括锁相环。该低通滤波器优选用垂直沟道式电容器来实施，并且优选包括漂移补偿部分。该器件(100)可以适当地设置成开环结构。在优选实施例中，所述低通滤波器包括并联连接的一个大电容器(C2)和一个小电容器(C1)，该大电容器(C2)与电阻器(R1)串联连接。

Description

低通滤波器和电子器件
技术领域
本发明涉及一种低通滤波器，其包括并联连接的一个大电容器和一个小电容器，该大电容器与电阻器串联连接。
本发明还涉及具有锁相环功能的一种电子器件，其包括比较器、低通滤波器和压控振荡器，该比较器和该振荡器是单个半导体器件的一部分，而该低通滤波器用一个小电容器和一个大电容器来实施。
背景技术
这种电子器件能够从市场上买到，如由飞利浦半导体公司提供的型号为BGB101A的蓝牙模块。这种蓝牙模块包括根据蓝牙协议进行工作所需要的所有高频元件，包括收发机、放大给天线的输出信号的功率放大器、放大来自天线的输入信号的低噪声放大器，以及必要的开关、匹配功能元件和滤波器。天线可以是所述模块的一部分，但是也可以分开提供。
这个模块中的低通滤波器是用分立电容器和分立电阻器来实现的。所述小电容器具有2.2nF的电容值，而所述大电容器具有22nF的电容值。该滤波器与比较器和振荡器一起形成锁相环(PLL)功能。在该器件中，所述环通过比较器获得输入信号。它将输入信号与来自振荡器的基准信号进行比较，并且将它的输出发送给低通滤波器。该低通滤波器的输出既用作输出信号和又用作振荡器的输入。振荡器的输出是由比较器使用的基准信号。
该低通滤波器在这种布局中具有两个功能：它是抑制所有高频分量的滤波器。而且，当器件处于发送模式时，它确保振荡器的频率得到保持。到此为止，电容器能够保持规定的频率非常重要。为了这一目的，在已知的模块内采用了满足NP0标准的电容器。这个标准规定电容值在-30和+85℃之间的温度范围内变化小于30ppm/℃。
当前解决方案的缺点是这些电容器相对较大。需要减小模块的空间，从而可以更容易地将其包括在各种手持设备内。
发明内容
因此，本发明的第一个目的是提供一种体积缩小的、在第一段中描述的那种低通滤波器。
本发明的第二个目的是提供一种具有改进低通滤波器的电子器件。
实现第一个目的就在于在具有第一表面的半导体衬底的基础上实施所述滤波器，其中提供小电容器和大电容器作为垂直沟道式电容器，这些沟延伸到提供电阻器的第一表面。实验表明，在-30℃、室温和+85℃的情况下，根据本发明的低通滤波器的漂移在规定的范围内。这样就使得该滤波器能够用于所谓的开环结构。
垂直沟道式电容器本身是公知的，例如从Roozeboom等人在Iht.J.Microcircuits and Electronic Packaging，24(2001)，182-196上的文章中知道这种电容器。然而，没有任何以下的提示或建议，即具有不同电容值的电容器可以与所需要的电阻器一起集成在单个衬底上。人们也不知道在这种单个衬底中电容器的泄漏和温度稳定性是符合规定的。
在一个优选实施例中，所述半导体衬底还包括漂移补偿部分。可以将该漂移补偿部分适当地实施成与地连接的RC滤波器。它与所述滤波器并联连接。这可以实施就在于从漂移补偿部分到半导体器件存在单独的连接，即焊球或者键合线。选择RC滤波器使其具有与在开环结构中出现的漂移相同的周期(时间常数)。
低通滤波器和漂移补偿部分的结合消除了开环调制的缺点，也就是不再需要昂贵的分立电容器。此外，它还具有开环调制的优点，即提供非常纯的信号而没有任何在闭环结构中必然出现的毛刺分量(spuriouscomponent)。
在另一个实施例中，滤波器的一端连接到地。这是开环结构的一个实施例。优选漂移补偿部分和滤波器都连接到地，从而存在一个从低通滤波器到地的连接。
优选通过电阻至少是0.5kΩ/cm的高欧姆衬底区将所述小电容器和大电容器隔开。这样就能够根据需要减小泄漏电流。衬底区优选具有大约1.0kΩ/cm的电阻。优选通过注入，更为优选的是通过具有Ar气体的注入，来增加衬底电阻。
在另一个实施例中，沟道式电容器具有包括氮化硅的电介质。这种电介质没有显示出任何滞后现象。已经发现优选采用氧化硅、氮化硅和氧化硅的叠层作为电介质。这样的叠层表现出具有良好的击穿电压。
在另一个实施例中，电阻器包括多晶硅层，在该层中还限定电容器的上电极。从工艺的角度来讲这是有利的。
在又一个实施例中，半导体衬底还包括二极管。可以将这些二极管适当地实施成PN二极管、齐纳二极管、背对背二极管、前后二极管或者浮动二极管。这些二极管之所以可以很好地与高欧姆衬底结合，就在于只有一部分衬底是高欧姆的。这对于垂直沟道式电容器的蚀刻来说也是优选的。集成这些二极管的优点至少有两个方面。首先，可以实施开环结构就在于低通滤波器和漂移补偿部分各自连接到二极管。于是锁相环功能更大的一部分可以集成在半导体衬底上。这允许减少滤波器和半导体器件之间连接的数量。这还允许更有效地使用可获得的空间，因而使这种电子器件的小型化成为可能。第二个优点是由此这种半导体器件可以更加具体地针对它的比较器功能和振荡器功能进行设计。例如，可以采用其他的衬底材料，其中二极管不是非常适合。
实现本发明的第二个目的就在于存在如权利要求1所述的低通滤波器，在层叠的管芯结构中将该滤波器安装到半导体器件上。由于这种层叠的管芯结构，不再需要用于分立电容器的空间。于是令人惊讶地发现滤波器位于半导体器件的顶部上并不影响嵌入在其中的任何电感器。
在一个适当的实施例中，半导体器件具有第一面和相对的第二面，低通滤波器位于该第一面上，在该第二面上半导体器件可以耦合到热沉。半导体器件必须散发掉比低通滤波器更多的热量，因此应该设有热沉。这可以用两种不同的方式来实现；首先，半导体器件通过其第二面附着到载体上或者引线框架上的热沉。然后提供滤波器作为半导体器件第一面上的元件。第二个实施例是器件设有引线框架，半导体器件附着到该引线框架。然后滤波器可以用作半导体器件的支撑，其表面可以具有用于重布线的互联。
在一个优选实施例中，低通滤波器具有最多等于半导体器件的侧面尺寸(lateral dimension)。在该实施例中，低通滤波器将是半导体器件顶部上的元件。滤波器和半导体器件之间的连接可以用引线键合(wirebonding)以及焊料或金属突起来实现。在采用突起的情况下，导体器件优选具有通称为有源键合焊盘(bond pads on active)的结构。键合焊盘这样位于限定晶体管的区域的顶部上要求半导体器件的互联结构稳定。例如，可以提供键合焊盘作为钝化层顶部上的导电路径。使用有源键合焊盘允许滤波器可以位于半导体器件第一面上的任意位置。优选在将滤波器安装到半导体器件之后，对器件进行封装。
附图说明
下面将参考附图，对本发明的滤波器和电子器件的这些方面和其它方面进行进一步的说明，在这些附图中：
图1示出器件第一实施例的概略剖面图；
图2示出器件第二实施例的概略剖面图；
图3示出第二实施例的概略顶视图；
图4示出对应于本发明的电路图；
图5示出本发明的滤波器原型的鸟瞰透视图；
图6示出本器件应用的示意图。
这些图没有按比例绘制，并且相同的标记表示相同的部件。
具体实施方式
图1示出本发明的电子器件100的第一实施例。它包括低通滤波器20和半导体器件30。半导体器件包括未示出的电功能，一般而言其包括收发机和振荡器。然而，该半导体器件30可以仅限于振荡器和比较器。利用一层导电胶或者焊料将该半导体器件30设置在热沉13上。它通过金属突起24电连接到滤波器20。滤波器20在这里还用作载体，并且包括用于重布线所需的所有互联。最后，它包括经焊料突起27到引线框架10的触点(contact)。这里所示的引线框架10是HVQFN型(高压四线扁平无引线，High Voltage Quad Flat Non-Leaded)的引线框架，其具有第一面11，滤波器20和半导体器件30附着到该第一面上。其还具有第二面12，在该第二面上暴露出触点16、17和热沉13。引线框架从第二面12和封装80进行半蚀刻，导致空间18，其中填充有封装、电绝缘材料。
图2和图3示出本发明的电子器件100的第二、优选实施例。图2示出概略剖面图，而图3示出顶视图。根据该实施例，滤波器20位于半导体器件30的顶部，并且利用一层非导电粘合剂26附着到其上。半导体器件在这里也设置在热沉13上，其是引线框架10的一部分。在该实施例中，热沉13还用作接地平面。利用引线键合31-34实现滤波器20、半导体器件30和引线框架10之间的电连接。引线键合31将滤波器20连接到半导体器件30。引线键合32将半导体器件30连接到引线框架10上的触点17。这些连接31、32传递信号。引线键合33、34连接到地16。虽然从应用方便的角度来看优选引线键合，但是也可以选择使用具有金属/或焊料球的倒装法连接，或者同时使用引线键合和倒装法的连接。滤波器20到地的连接33特别适合于开环结构。应该理解滤波器在半导体器件30上的具体侧面位置是实施问题。
图4示出用于优选实施例的电路图。在本实施例中，滤波器不仅包括小电容器C1和与电阻器R1串联连接的大电容器C2，还包括漂移补偿部分。该漂移补偿部分包括电容器C3和电阻器R2。小电容器C1的电容值为2.2nF，大电容器C2的电容值为22nF。电容器C3的电容值为5.6nF。这些值用于在蓝牙协议的频率上，也就是在2.4GHz上起作用的振荡器。很清楚，对于其它频带可以采用其它电容值。此外，在本例中，将滤波器设计成仅仅工作在单一频率上。然而，可以将其扩展以包括用于更多频带的元件。
图4还示出漂移补偿部分和滤波器到电路的耦合。在一端，滤波器和补偿部分都与地连接。在图2和图3所示的例子中，这是通过组合连接到地来实施的。与此同时，漂移补偿部分和滤波器并联连接。于是它们中的每一个都位于二极管之间。电路部分还具有电阻器R3和R3’。如果希望这样做，二极管和电阻器可以集成在滤波器20中。
实验已经显示出滤波器具有用作低通滤波器所需要的特性。在不同温度下、在不同频率下和针对不同频率下的跳变模式(hopping mode)、以及在不同的调谐电压下来进行实验。
  频率GHz   温度   2.402   2.441   2.478
  DH1(kHz)   25℃   -17   -16   -18
  DH5(kHz)   25℃   -29   -26   -30
如果将频率设为跳变模式，则发现对于DH1平均漂移为-15kHz，对于DH5平均漂移为-26kHz。
  频率GHz   温度   2.402   2.441   2.478
  DH1(kHz)   85℃   -10   -19   -19
  DH5(kHz)   85℃   26   -25   -32
在跳变模式中，注意到对于DH1平均漂移为-12kHz，对于DH5平均漂移为-25kHz。
  频率GHz   温度   2.402   2.441   2.478
  DH1(kHz)   30℃   15   13   15
  DH5(kHz)   30℃   40   17   -28
在跳频模式中，发现对于DH1平均漂移为19kHz，对于DH5平均漂移为42kHz。通过对收发机进行调谐可以得到最佳值。
在静态环境中进行了进一步的测量，以便检查调谐电压Vtune的电平。这是由于半导体器件30包括线圈，并且滤波器20位于其顶部上而进行的。线圈用于压控振荡器。
在3V和2.7V的调谐电压电平Vtune下观察到以下结果：
  频率GHz   2.402   2.441   2.478
  V<sub>tune</sub>(V)   1.4   1.64   1.94
  DH5(kHz)   -25   -20   -16
由此可见，调谐电压电平的差别不影响所得到的数据。因此可以得出结论，那就是调谐电压不受滤波器20在半导体器件20顶部上的具***置的影响。
图5示出本根据发明的滤波器原型的鸟瞰透视图。事实上，所示原型是沟道式电容器阵列。这些电容器设置在Si的半导体衬底1上。下电极2包括衬底1中的n+掺杂区。在其上设置电介质3，实际上是氮化硅。顶部电极4用多晶硅来实现，其是n+掺杂的。在它顶部上设置金属层，其中限定顶部电极5和下电极6的触点。衬底中的孔隙直径在1μm的数量级上，深度为大约20μm。通过孔隙的数量确定电容器的电容值。在电容器之间，衬底被做成高欧姆的。这在单独电容器C1、C2、C3之间提供泄漏间的障碍。如果需要，可以在衬底的表面上限定电阻器，例如，在限定顶部电极4的同一多晶硅层中。如果需要，可以在衬底的表面上限定平面二极管。如果需要，可以在用于触点5、6的金属层中限定电感器。可以通过诸如从Roozeboom等人在Int.J.Microcircuits and ElectronicPackaging，24(2001)，182-196上的文章中了解到的干法蚀刻或者湿法化学蚀刻来生长孔隙。
图6示出本发明的电子器件100的应用结构。事实上，该应用是适合于处理根据蓝牙协议的信号的前端无线电通信模块200。该模块200包括半导体器件30和滤波器20。半导体器件30在这种情况下包括压控振荡器和收发机以及功率和低噪声放大器(在图中用三角形表示)。收发机部分包括调压器211、控制逻辑212、合成器213、DC提取器214以及解调器215。除了半导体器件30和滤波器之外，模块200还包括电源去耦205，将电源电压和地作为输入。模块200还包括发射路径，其中存在平衡-不平衡转换器和滤波器203；接收路径，其中存在平衡-不平衡转换器和滤波器204；发射和接收路径之间的开关202、以及带通滤波器201。

Claims (11)

1.一种低通滤波器，包括并联连接的一个大电容器和一个小电容器，该大电容器与电阻器串联连接，其特征在于在具有第一表面的半导体衬底的基础上实施该滤波器，其中将所述小电容器和所述大电容器设置为垂直沟道式电容器，所述垂直沟道电容器中的沟道延伸到所述第一表面，在该第一表面上设置该电阻器。
2.如权利要求1所述的低通滤波器，其特征在于所述半导体衬底上形成有漂移补偿部分。
3.如权利要求1所述的低通滤波器，其特征在于所述滤波器的一端与地连接。
4.如权利要求1所述的低通滤波器，其特征在于通过高欧姆衬底区将所述小电容器和所述大电容器隔开。
5.如权利要求1所述的低通滤波器，其特征在于所述沟道式电容器具有包括氮化硅的电介质。
6.如权利要求1所述的低通滤波器，其特征在于所述电阻器包括多晶硅层，在该层中还限定所述大电容器和小电容器的上电极。
7.如权利要求1所述的低通滤波器，其特征在于所述半导体衬底上形成有二极管。
8.一种具有锁相环功能的电子器件，包括比较器、低通滤波器和压控振荡器，所述比较器和所述振荡器是单个半导体器件的一部分，并且通过一个小电容器和一个大电容器来实施该低通滤波器，其特征在于具有根据权利要求1至7中任意一项所述的低通滤波器，以层叠的管芯结构将该滤波器安装到该半导体器件上。
9.如权利要求8所述的电子器件，其中所述半导体器件具有第一面和相对的第二面，在所述第一面上存在所述低通滤波器，在所述第二面上所述半导体器件耦合到热沉上。
10.如权利要求8或9所述的电子器件，其特征在于所述低通滤波器具有至多等于所述半导体器件的侧面尺寸。
11.如权利要求8所述的电子器件，其中所述锁相环功能设置成开环结构。
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