CN1701649B - 一种焊料供给方法以及焊料凸起形成方法 - Google Patents

一种焊料供给方法以及焊料凸起形成方法 Download PDF

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CN1701649B
CN1701649B CN02829985XA CN02829985A CN1701649B CN 1701649 B CN1701649 B CN 1701649B CN 02829985X A CN02829985X A CN 02829985XA CN 02829985 A CN02829985 A CN 02829985A CN 1701649 B CN1701649 B CN 1701649B
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solder
solder particle
liquid
particle
scolder
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CN1701649A (zh
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小野崎纯一
吉野雅彦
齐藤浩司
安藤晴彦
坂本伊佐雄
白井大
大桥勇司
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Japan Science and Technology Agency
Tamura Corp
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Tamura Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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Abstract

本发明提供的焊料供给方法，不仅实现焊盘电极的精细间距，而且获得焊料量多而且随机误差也小的焊料凸起。首先，使表面(21)朝上将基板(20)置于液体槽(11)内的非活性液体(13)中。接着，从焊料微粒形成单元(15)将包含焊料微粒(14)的非活性液体(13)送至液体槽(11)，使焊料微粒(14)从供给管(16)下落到非活性液体(13)中的基板(20)上。焊料微粒(14)依靠重力自然下落到达基板(20)上。到达基板(20)的焊盘电极上的焊料微粒(14)，靠重力停留于该位置，经过焊料润湿融合时间的话，便在焊盘电极表面扩展而形成焊料被膜。

Description

一种焊料供给方法以及焊料凸起形成方法
技术领域
本发明涉及诸如半导体基板、接插式基板上形成半球状的焊料凸起来制造FC(倒装片flip chip)、BGA(焊珠格栅阵列ball grid array)时所用的焊料供给方法、以及采用该方法的焊料凸起形成方法和装置。
背景技术
近年来，随着电子设备的小型化和薄型化，电子元件的高密度安装技术得到迅速发展。作为实现这种高密度安装的半导体器件，所用的是具有半球状的焊料凸起的FC、BGA。
作为在焊盘电极上形成焊料凸起的方法，通常是使焊盘电极与熔融焊料接触的方法(熔融焊料法)，将焊料膏按丝网印刷并回流到焊盘电极上的方法(丝网印刷法)，放置焊料珠粒并使之回流到焊盘电极上的方法(焊料珠粒法)，以及对焊盘电极实施焊料电镀的方法(电镀法)等。除此以外还有例如专利文献1即日本特公平7-114205号公报(第1图等)中记载的焊料凸起形成方法。
图4是示出专利文献1中记载的形成方法的概略剖视图。下面根据该附图进行说明。
该形成方法中，首先将表面具有铜电极81的晶片82按该表面朝下方式浸渍于加热至焊料熔点以上的非活性溶剂80中。接着，在非活性溶剂80中通过往上喷射由熔融焊料83所形成的焊料粒子84来使焊料粒子84与晶片82接触，在铜电极81上形成焊料凸起(未图示)。下面作更详细的说明。
加热槽85内的熔融焊料83和非活性溶剂80两者温度控制为稍稍高于焊料熔点的温度，例如200℃。加热槽85内的熔融焊料83由焊料导入管86吸引到焊料微粒化装置87内。此外，焊料微粒化装置87还由非活性溶剂导入管88吸引与熔融焊料83同温的非活性溶剂80，通过将这2种液体混合搅拌，将熔融焊料83破碎形成为粒子。于是，包含焊料粒子84的非活性溶剂80由混合液导出管89输送到喷射装置90，从喷嘴91往上喷射。
非活性溶剂80中的焊料粒子84处于被非活性溶剂80覆盖的状态，所以不与外界空气接触。因此，焊料粒子84的表面保持金属表面，呈活性状态。于是，非活性溶剂80中的焊料粒子84一旦与所浸渍的晶片82的表面相接触，便通过与铜电极81形成焊料合金层而附着于铜电极81的表面，从而铜电极81表面为所熔融的焊料被膜(未图示)所覆盖。接着，焊料粒子84容易吸附在焊料被膜上，所以这部分焊料粒子84渐渐附着于焊料被膜上。
而未附着于铜电极81上的焊料粒子84，由于其比重差的作用而慢慢下沉，堆积于加热槽85的底部。这样，通过使铜电极81朝下将晶片82浸渍于焊料粒子84往上喷射的非活性溶剂80中，可以仅在铜电极81表面有选择地形成焊料凸起(未图示)。
但熔融焊料法，虽具有适合于焊盘电极精细间距这种优点，但存在焊料凸起的焊料量少而且其随机误差也大这种缺点。丝网印刷法，虽具有能够整体容易地形成焊料凸起这种优点，但使用精细间距的网膜时容易发生堵塞、焊料量不均匀，因此存在不适合精细间距这种缺点。焊料珠粒法，作为近年来的倾向用于一个半导体器件的焊料珠粒的数量极多，而且焊料珠粒的大小极小，所以存在制造成本高的缺点。电镀法其缺点在于，对于近年来不断普及的无铅焊料没有适当的电镀液。此外，专利文献1的形成方法其缺点在于，焊料粒子难以附着于铜电极上，即焊料的润湿融合性差，所以难以实用化。
因此，本发明其目的在于，提供一种可实现焊盘电极的精细间距，而且可获得焊料量多而且随机误差也小的焊料凸起的焊料供给方法，以及采用该方法的焊料凸起形成方法和装置。
发明内容
权利要求第1项记载的焊料供给方法，是通过使表面朝上将该表面具有金属膜的基板置于加热至焊料熔点以上的液体中，提供一种焊料微粒供给装置，该装置具有：供给由熔融焊料形成的焊料微粒的焊料微粒形成单元以及使所述焊料微粒下落到基板上的供给管，通过所述焊料形成单元在所述液体中使熔融焊料破碎来形成所述焊料微粒，所述焊料微粒从所述焊料微粒形成单元送出，从所述供给管下落到所述液体中，所述焊料微粒依靠重力自然下落到达所述基板上，从而在金属膜上形成焊料被膜。这里所说的“焊料”中，不限于焊料凸起形成用的焊料，也可包含半导体芯片的管芯焊接用的焊料或用于例如铜管接合用途的称为“软焊料”的焊料等，而且当然也可包含无铅焊料。这里所说的“液体”，最好是不与焊料发生反应的非活性液体、或具有去除焊料表面氧化膜的作用的液体(例如后面述及的有机酸等)。这里所说的“焊料被膜”，不限于膜状被膜，也包含半球状、突起状的被膜。
基板是使金属膜一侧朝上浸渍于液体中。此时，在基板上的液体中供给焊料微粒的话，焊料微粒便依靠重力自然下落到达基板上。到达基板的金属膜上的焊料微粒，依靠重力停留于该位置，经过“某一段时间”便在金属膜表面扩展而形成焊料被膜。接着，到达该焊料被膜上的焊料微粒，依靠重力停留于该位置，同样经过“某一段时间”便扩展而使焊料被膜增厚。这样重复从而使焊料被膜成长。
本发明的发明人发现，为了使焊料润湿融合，需要上述“某一段时间”(下面称为“焊料润湿融合时间”)。专利文献1的技术中，相对于朝下的焊盘电极往上喷射焊料微粒来接触，因而焊料微粒与焊盘电极的接触时间只是短暂的一瞬间，因此可认为焊料润湿融合性差。
此外，专利文献1的技术，是与重力反向往上喷射焊料微粒的，所以需要相当的能量。与此相反，本发明中只是使焊料微粒自然下落，所以几乎不需要能量。另外，专利文献1的技术，可看作是喷流焊接其中一种。与此相反，本发明不属于以往任何焊接方法，而是全新的技术。
此外，本发明的发明人发现，液体中焊料微粒即便相互接触，彼此也很少融合形成为大的焊料微粒。因此，即便对于精细间距的金属膜也不会发生焊料跨接等现象。此外，焊料被膜的焊料量可通过改变焊料微粒的供给量很容易调整。而且，可大量供给极小的焊料微粒，所以焊料微粒在液体中均匀分布。所以，焊料被膜的焊料量其随机误差也小。
权利要求第2项记载的焊料供给方法，是在权利要求第1项记载的焊料供给方法中，使下落接触到金属膜或焊料被膜上的焊料微粒保持，直至发生焊料润湿融合。所谓发生焊料润湿融合所需的一定时间，是指上述焊料润湿融合时间。因此，通过使接触到金属膜或焊料被膜上的焊料微粒在该状态下保持润湿融合时间以上，便能够可靠发生焊料润湿融合。这里所说的“焊料润湿融合”，不限于到达金属膜上的焊料微粒在金属膜表面上扩展形成焊料被膜的情形，也包含到达焊料被膜上的焊料微粒扩展使焊料被膜增厚的情形。
权利要求第3项记载的焊料凸起形成方法，是通过使表面朝上将该表面具有焊盘电极的基板置于加热至焊料熔点以上的液体中，提供一种焊料微粒供给装置，该装置具有：供给由熔融焊料形成的焊料微粒的焊料微粒形成单元以及使所述焊料微粒下落到基板上的供给管，通过所述焊料形成单元在所述液体中使熔融焊料破碎来形成所述焊料微粒，所述焊料微粒从所述焊料微粒形成单元送出，从所述供给管下落到所述液体中，所述焊料微粒依靠重力自然下落到达所述基板上，从而在焊盘电极上形成焊料凸起。这里所说的“基板”中，包含半导体晶片、配线板等。此外，“焊料凸起”中不限于半球状、突起状的凸起，也包含膜状的凸起。
基板是使焊盘电极一侧朝上浸渍于液体中。此时，在基板上的液体中供给焊料微粒的话，焊料微粒便依靠重力自然下落到达基板上。到达基板的焊盘电极上的焊料微粒，依靠重力停留于该位置，经过焊料润湿融合时间便在焊盘电极表面扩展而形成焊料被膜。接着，到达该焊料被膜上的焊料微粒，依靠重力停留于该位置，同样经过焊料润湿融合时间便扩展而使焊料被膜增厚。这样重复从而使焊料被膜成长成为焊料凸起。
如前文所述，本发明的发明人发现，液体中焊料微粒即便相互接触，彼此也很少融合形成为大的焊料微粒。因此，即便对于精细间距的焊盘电极也不会发生焊料跨接等现象。此外，焊料凸起的焊料量可通过改变焊料微粒的供给量很容易调整。而且，可大量供给与焊盘电极相比极小的焊料微粒，所以焊料微粒在液体中均匀分布。所以，焊料凸起的焊料量其随机误差也小。
权利要求第4项或第5项记载的焊料凸起形成方法，是在权利要求第3项记载的形成方法中，在液体中包含焊剂或有机酸，或液体由有机酸形成，上述有机酸具有去除金属表面氧化物的还原作用。通过焊剂或有机酸的作用，液体中的焊料润湿融合性进一步提高。这里所说的“焊剂”中，包含松香、表面活性剂、以及其他具有去除焊料表面氧化膜的作用的成分(例如盐酸等)。
权利要求第6项记载的焊料凸起形成方法，是在权利要求第3项记载的形成方法中，焊料微粒的直径小于相邻的焊盘电极的彼此边缘间的最短距离。此时，分别到达相邻的2个焊盘电极上的焊料微粒彼此没有接触，因此不会融合形成焊料跨接。
附图说明
图1是示出本发明焊料凸起形成方法和装置的第1实施方式的概略构成图，其中工序按图1(1)～图1(3)的顺序进行；
图2是图1中的局部放大剖视图，其中图2(1)～图2(3)分别与图1(1)～图1(3)相对应；
图3是示出本发明焊料凸起形成方法和装置的第2实施方式的概略构成图；
图4是示出现有焊料凸起形成方法的概略剖视图。
具体实施方式
下面参照附图说明本发明的实施方式。其中，就本发明焊料供给方法来说，可用于本发明焊料凸起形成方法和装置，因而说明本发明焊料凸起形成方法和装置实施方式的同时进行说明。
图1是示出本发明焊料凸起形成方法和装置的第1实施方式的概略构成图，其中工序按图1(1)～图1(3)的顺序进行。下面根据该附图说明。
对本实施方式中所用的形成装置10进行说明。形成装置10具有液体槽11和焊料微粒供给装置12。液体槽11存放的是作为加热至焊料熔点以上的液体的非活性液体13以及使表面21朝上置于非活性液体13中的基板20。焊料微粒供给装置12具有：在非活性液体13中供给由熔融焊料形成的焊料微粒14的焊料微粒形成单元15；以及使焊料微粒14下落到基板20上的供给管16。
焊料采用例如Sn-Pb(熔点183℃)、Sn-Ag-Cu(熔点218℃)、Sn-Ag(熔点221℃)、Sn-Cu(熔点227℃)等。非活性液体13只要是具有焊料熔点以上的沸点且不与焊料反应的液体，可用任何非活性液体，例如为氟系高沸点溶剂、及氟系油等。液体槽11可在例如不锈钢、耐热性树脂等制成的容器中设置确保非活性液体13在焊料熔点以上(例如熔点+50℃)用的未图示的电加热器、冷却水配管等。此外，液体槽11内还可设置将基板20置于非活性液体13中用的载置台17。
焊料微粒形成单元15，例如为通过在非活性液体13中使熔融焊料破碎来形成焊料微粒14的单元。此时，与液体槽11之间也可以设置用来导入沉在液体槽11底部的焊料微粒14(熔融焊料)及液体槽11内的非活性液体13的配管。供给管16可将例如未图示的供给口从根基端到前端设置有多个，使焊料微粒14从该供给口均匀下落到非活性液体13中。这样，混入非活性液体13中的焊料微粒14，从焊料微粒形成单元15送出，从供给管16下落到液体槽11内的非活性液体13中。
图2是图1中的局部放大剖视图，其中图2(1)～图2(3)分别与图1(1)～图1(3)相对应。下面根据上述附图进行说明。其中与图1相同的部分通过加注相同标号使说明从略。此外，图2中上下方向与左右方向相比在图示时有所放大。
首先说明本实施方式中所用的基板20。基板20是硅晶片。基板20的表面21上形成有焊盘电极22。焊盘电极22上按照本实施方式的形成方法形成有焊料凸起23。基板20通过焊料凸起23与其他半导体芯片、配线板进行电气和机械连接。焊盘电极22其形状为例如圆形，直径c为例如40μm。相邻的焊盘电极22中心间的距离d为例如80μm。焊料微粒14的直径b为例如3～15μm。
焊盘电极22由形成于基板20上的铝电极24、形成于铝电极24上的镍层25、以及形成于镍层25上的金层26所组成。镍层25和金层26均为UBM(阻挡底层金属(under barriermetal)或凸起底层冶金(under bump metallurgy))层。基板20上焊盘电极22以外部分用保护膜27覆盖。
下面对焊盘电极22的形成方法进行说明。首先，在基板20上形成铝电极24，铝电极24以外的部分用聚酰亚胺树脂形成保护膜27。这些可利用例如光刻技术及蚀刻技术形成。接着，对铝电极24的表面进行镀锌处理后，利用无电解电镀法在铝电极24上形成镍层25及金层26。设置该UBM层的原因是用以对铝电极24提供焊料润湿融合性。
下面根据图1及图2对本实施方式的焊料凸起形成方法和装置说明其作用及效果。
首先，如图1(1)和图2(1)所示使表面21朝上将基板20置于液体槽11内的非活性液体13中。基板20的表面21上形成有焊盘电极22。非活性液体13加热至焊料熔点以上。
接着，如图1(2)和图2(2)所示，由焊料微粒形成单元15向液体槽11输送包含焊料微粒14的非活性液体13，使焊料微粒14从供给管16下落到非活性液体13中的基板20上。
基板20是使焊盘电极22一侧朝上浸渍于非活性液体13中。此时，在基板20上的非活性液体13中供给焊料微粒14的话，焊料微粒14便依靠重力自然下落到达基板20上。到达基板20的焊盘电极22上的焊料微粒14，依靠重力停留于该位置，经过焊料润湿融合时间便在焊盘电极22表面上扩展而形成焊料被膜23’。接着，到达该焊料被膜23’上的焊料微粒14，依靠重力停留于该位置，同样经过焊料润湿融合时间便扩展而使焊料被膜23’增厚。这样重复从而使焊料被膜23’成长成为焊料凸起23(图1(3)和图2(3))。
所谓的焊料润湿融合时间，指的是本发明的发明人所发现的、焊料微粒14和焊盘电极22或焊料被膜23’两者的接触时间其中焊料润湿融合所需的时间(例如数秒～数十秒)。本实施方式中，焊料微粒14下落到达焊盘电极22或焊料被膜23’的话，焊料微粒14便依靠重力的作用停留于该位置。因此，焊料微粒14和焊盘电极22或焊料被膜23’两者便接触直到经过焊料润湿融合时间。所以焊料润湿融合性良好。
此外，本发明的发明人发现，在非活性液体13中焊料微粒14即便相互接触，彼此也很少融合形成为大的焊料微粒。所以，即便对于精细间距的焊盘电极22也不会发生焊料跨接等。具体来说，使焊料微粒14的直径b形成为小于相邻的焊盘电极22彼此边缘间的最短距离a。此时，分别到达相邻的2个焊盘电极22上的焊料微粒14彼此不接触，所以不会融合形成焊料跨接。
此外，焊料凸起23的焊料量可通过焊料微粒形成单元15改变焊料微粒14的供给量很容易调整。而且，可大量供给与焊盘电极22相比极小的焊料微粒14，焊料微粒在非活性液体13中均匀分布。所以，焊料凸起23的焊料量其随机误差也小。
图3是示出本发明焊料凸起形成方法和装置的第2实施方式的概略构成图。下面根据该附图进行说明。其中与图1和图2相同的部分通过加注相同的标号来使说明从略。
本实施方式的焊料凸起形成装置30，液体槽31和焊料微粒供给装置32为如下构成。液体槽31由存放基板20、非活性液体13和沉浸于非活性液体13中的熔融焊料33的液体槽34、以及存放非活性液体13和沉浸于非活性液体13中的熔融焊料33的液体槽35、36所组成。液体槽34和液体槽35、36两者上部37和底部38相互连通。
焊料微粒供给装置32由设置于液体槽35、36中的搅拌器32A、32B所组成，通过使液体槽34～36内的熔融焊料33破碎来形成焊料微粒14，同时从液体槽35、36的上部37向液体槽34供给焊料微粒14，对沉在液体槽34底部38的焊料微粒14再度利用作为熔融焊料33。
下面说明形成装置30的动作。另外，搅拌器32A、32B为相同构成，所以仅说明搅拌器32A。
搅拌器32A设置于液体槽35内，具有电动机40、旋转轴41、叶轮42等。电动机40旋转的话，叶轮42也通过旋转轴41旋转。这样，叶轮42便使液体槽34、35内循环的非活性液体13发生流动。而且，液体槽35内的熔融焊料33卷入该流动中，由叶轮42破碎成为焊料微粒14，从上部37供给液体槽34。
利用焊料微粒14形成焊料凸起(未图示)的过程与第1实施方式的情形相同。另一方面，未成为焊料凸起的焊料微粒14沉于液体槽34内底部38。而且，液体槽34和液体槽35两者底部38是相互连通的，因此，沉淀的焊料微粒14可作为熔融焊料33被粉碎，再度利用作为焊料微粒14。所以可实现焊料的有效利用。
另外，也可以将液体槽34和液体槽35两者之间堵塞，避免底部38连通。此时，由于没有重复利用焊料微粒14，因而焊料微粒14的品质提高，而且焊料微粒14的大小也更为均匀。
另外，本发明不用说，不限于上述第1和第2实施方式。例如，也可以用配线板(BGA)来替代硅晶片(FC)。此外，非活性液体中也可包含焊剂或上述有机酸，也可用上述有机酸替代非活性液体。此外，电极材料不限于铝，也可使用Al-Si、Al-Si-Cu、Al-Cu、Cu等。另外，还可以用例如盐酸去除焊料微粒的氧化膜后将该焊料微粒投入液体中。
工业实用性
按照本发明焊料供给方法(权利要求第1项)，通过在加热至焊料熔点以上的液体中使焊料微粒下落到基板上，在金属膜上形成焊料被膜，可以使到达金属膜上的焊料微粒依靠重力在该位置持续停留焊料润湿融合时间以上，所以可提高焊料润湿融合性。此外，液体中焊料微粒即便相互接触，彼此也很少融合形成为大的焊料微粒，因而可防止精细间距的金属膜中的焊料跨接。此外，可通过改变焊料微粒的供给量，很容易调整焊料被膜的焊料量。而且，可大量供给的极小的焊料微粒，因而焊料微粒在液体中均匀分布，可以使焊料被膜的焊料量均匀。所以，可实现金属膜的精细间距，而且可获得焊料量多而且随机误差也小的焊料被膜。
按照权利要求第2项记载的焊料供给方法，通过使接触到金属膜上或焊料被膜上的焊料微粒在该状态下保持焊料润湿融合时间以上，可确实发生焊料润湿融合。
按照权利要求第3项记载的焊料供给方法，通过使下落速度处于一定范围内的焊料微粒下落到基板上，可仅使用适当大小的焊料微粒，因此，可以抑制焊料跨接发生以及氧化膜所造成的焊料润湿融合性的降低。
按照本发明焊料凸起形成方法和装置(权利要求第4、9项)，通过在加热至焊料熔点以上的液体中使焊料微粒下落到基板上在焊盘电极上形成焊料凸起，可以使到达焊盘电极上的焊料微粒依靠重力在该位置持续停留焊料润湿融合时间以上，所以可以提高焊料润湿融合性。此外，在液体中焊料微粒即便相互接触，彼此也很少融合形成为大的焊料微粒，所以可防止精细间距的焊盘电极中的焊料跨接。此外，可通过改变焊料微粒的供给量，很容易调整焊料凸起的焊料量。而且，可大量供给与焊盘电极相比极小的焊料微粒，焊料微粒在液体中均匀分布，因而可以使焊料凸起的焊料量均匀。因此，可实现焊盘电极的精细间距，而且可获得焊料量多而且随机误差也小的焊料凸起。
按照本发明焊料凸起形成方法和装置(权利要求第5、10项)，通过在液体中使熔融焊料破碎来形成焊料微粒，可以在共同液体中形成焊料微粒和焊料凸起两者，所以可简化形成装置的构成。
按照本发明焊料凸起形成方法和装置(权利要求第6、7、13、14项)，在液体中包含焊剂或上述有机酸，或液体由上述有机酸形成，所以可进一步提高液体中的焊料润湿融合性。
按照本发明焊料凸起形成方法和装置(权利要求第8、15项)，通过使焊料微粒的直径形成为小于相邻的焊盘电极彼此边缘间的最短距离，所以可避免分别到达相邻的2个焊盘电极上的焊料微粒彼此接触，可更为可靠防止焊料跨接的发生。
按照权利要求第11项记载的焊料凸起形成装置，通过在基板上形成焊料凸起的第1液体槽和形成焊料微粒的第2液体槽两者底部彼此不连通，从而不再利用未成为焊料凸起的焊料微粒，因此，可以提高焊料微粒的品质，而且可以使焊料微粒的大小均匀。
按照权利要求第12项记载的焊料凸起形成装置，通过在基板上形成焊料凸起的第1液体槽和形成焊料微粒的第2液体槽两者底部彼此连通，从而可重复利用未成为焊料凸起的焊料微粒，因此可毫无浪费地有效利用焊料。

Claims (6)

1.一种焊料供给方法，其特征在于，通过使表面朝上将该表面具有金属膜的基板置于加热至焊料熔点以上的液体中，提供一种焊料微粒供给装置，该装置具有：供给由熔融焊料形成的焊料微粒的焊料微粒形成单元以及使所述焊料微粒下落到基板上的供给管，通过所述焊料形成单元在所述液体中使熔融焊料破碎来形成所述焊料微粒，所述焊料微粒从所述焊料微粒形成单元送出，从所述供给管下落到所述液体中，所述焊料微粒依靠重力自然下落到达所述基板上，从而在所述金属膜上形成焊料被膜。
2.如权利要求1所述的焊料供给方法，其特征在于，使下落接触到所述金属膜或所述焊料被膜上的所述焊料微粒保持，直至发生焊料润湿融合。
3.一种焊料凸起形成方法，其特征在于，通过使表面朝上将该表面具有焊盘电极的基板置于加热至焊料熔点以上的液体中，提供一种焊料微粒供给装置，该装置具有：供给由熔融焊料形成的焊料微粒的焊料微粒形成单元以及使所述焊料微粒下落到基板上的供给管，通过所述焊料形成单元在所述液体中使熔融焊料破碎来形成所述焊料微粒，所述焊料微粒从所述焊料微粒形成单元送出，从所述供给管下落到所述液体中，所述焊料微粒依靠重力自然下落到达所述基板上，从而在所述焊盘电极上形成焊料凸起。
4.如权利要求3所述的焊料凸起形成方法，其特征在于，所述液体中包含焊剂。
5.如权利要求3所述的焊料凸起形成方法，其特征在于，
所述液体中包含有机酸，或所述液体由所述有机酸形成，该有机酸具有去除金属表面氧化物的还原作用。
6.如权利要求3所述的焊料凸起形成方法，其特征在于，所述焊料微粒的直径小于相邻的所述焊盘电极的彼此边缘间的最短距离。
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1729334A4 (en) * 2004-03-22 2010-06-02 Tamura Seisakusho Kk LOT COMPOSITION AND METHOD FOR HILLING THEREFOR
JP4576286B2 (ja) * 2004-05-10 2010-11-04 昭和電工株式会社 電子回路基板の製造方法および電子部品の実装方法
KR101122492B1 (ko) * 2004-11-16 2012-02-29 강준모 솔더 범프를 구비한 반도체 장치 및 그 제조방법
JP4576270B2 (ja) * 2005-03-29 2010-11-04 昭和電工株式会社 ハンダ回路基板の製造方法
JP2006294949A (ja) * 2005-04-13 2006-10-26 Tamura Seisakusho Co Ltd 電極構造体及び突起電極並びにこれらの製造方法
WO2007007865A1 (en) 2005-07-11 2007-01-18 Showa Denko K.K. Method for attachment of solder powder to electronic circuit board and solder-attached electronic circuit board
JP2007073617A (ja) * 2005-09-05 2007-03-22 Tamura Seisakusho Co Ltd 電極構造体、実装用基板及び突起電極並びにこれらの製造方法
KR100726448B1 (ko) * 2006-03-31 2007-06-11 이원근 미세 볼 제조장치 및 제조방법
JP4685992B2 (ja) * 2007-01-23 2011-05-18 株式会社タムラ製作所 はんだ付け装置及びはんだ付け方法並びにはんだ付け用プログラム
KR101051579B1 (ko) * 2008-12-19 2011-07-22 삼성전기주식회사 액상 리플로우 방법
JP5327233B2 (ja) * 2009-07-08 2013-10-30 トヨタ自動車株式会社 半導体装置とその製造方法
CN102184874B (zh) * 2011-04-02 2012-12-26 何永基 芯片接合方法
CN102300417B (zh) * 2011-08-10 2013-09-11 深南电路有限公司 电子元件埋入式电路板及其制造方法
JP5821797B2 (ja) * 2012-07-26 2015-11-24 Tdk株式会社 電子部品の製造方法及び電子部品の製造装置
WO2016022755A2 (en) 2014-08-06 2016-02-11 Greene Lyon Group, Inc. Rotational removal of electronic chips and other components from printed wire boards using liquid heat media
CN109623080A (zh) * 2019-01-24 2019-04-16 合肥巨动力***有限公司 一种高效率扁线电机绕组端部焊接装置及焊接工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2113720A (en) * 1982-01-07 1983-08-10 Standard Telephones Cables Ltd Fabricating solder tracks
US6070788A (en) * 1994-09-15 2000-06-06 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method of soldering terminal faces, as well as a method of manufacturing a solder alloy

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2173136A (en) 1985-04-01 1986-10-08 Rudolf Siegfried Strauss Soldering surface mounted devices to flat surfaces
JPH07114205B2 (ja) 1988-06-30 1995-12-06 日本電装株式会社 はんだバンプの形成方法
JPH03226365A (ja) 1990-01-31 1991-10-07 Matsumura Kinzoku Kogyo Kk 微細はんだ層の形成方法
US5125560A (en) * 1991-11-04 1992-06-30 At&T Bell Laboratories Method of soldering including removal of flux residue
JP3092417B2 (ja) 1993-10-18 2000-09-25 京セラ株式会社 磁性トナー
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
JPH0864943A (ja) 1994-08-17 1996-03-08 Tdk Corp ディスパージョン半田付け方法
US5736074A (en) * 1995-06-30 1998-04-07 Micro Fab Technologies, Inc. Manufacture of coated spheres
TW340296B (en) * 1997-02-21 1998-09-11 Ricoh Microelectronics Kk Method and apparatus of concave plate printing, method and apparatus for formation of wiring diagram, the contact electrode and the printed wiring nickel substrate
JP3799200B2 (ja) * 1999-09-22 2006-07-19 キヤノン株式会社 はんだ回収方法およびはんだ回収装置
EP1732118B1 (en) * 2004-03-30 2011-05-11 Tamura Corporation Heater, reflow apparatus with such heater

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2113720A (en) * 1982-01-07 1983-08-10 Standard Telephones Cables Ltd Fabricating solder tracks
US6070788A (en) * 1994-09-15 2000-06-06 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method of soldering terminal faces, as well as a method of manufacturing a solder alloy

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP平2-12830A 1990.01.17
JP平3-226365A 1991.10.07
JP特开平8-64943A 1996.03.08

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