JP5327233B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP5327233B2 JP5327233B2 JP2010547888A JP2010547888A JP5327233B2 JP 5327233 B2 JP5327233 B2 JP 5327233B2 JP 2010547888 A JP2010547888 A JP 2010547888A JP 2010547888 A JP2010547888 A JP 2010547888A JP 5327233 B2 JP5327233 B2 JP 5327233B2
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- 239000004065 semiconductor Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000011701 zinc Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 229910018125 Al-Si Inorganic materials 0.000 claims description 36
- 229910018520 Al—Si Inorganic materials 0.000 claims description 36
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000006467 substitution reaction Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 20
- 229910018594 Si-Cu Inorganic materials 0.000 claims description 20
- 229910008465 Si—Cu Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000007772 electroless plating Methods 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 224
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L2224/05563—Only on parts of the surface of the internal layer
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Description
まず、ウェハ100の表面にスパッタ法によって、第1層としてのTiN層131を形成する。図9は、本実施例に係るTiN層131、Al層132、Al−Si層133を形成するためのスパッタ装置36を概念的に示す図である。スパッタ装置36は、チャンバ34内に、バッキングプレート361と、ターゲット362と、ステージ343とを備えている。スパッタ装置36は、ターゲット362と、ステージ343上に載置するウェハとの間に高電圧を印加することが可能な構成となっている。ターゲット362とステージ343とは、チャンバ34内において対向しており、離間して配置されている。ステージ343には、温度センサが設置されており、ステージ343上に載置されるウェハ100の温度(基板温度)を検知することができる。
次に、ウェハ100の表面にスパッタ法によって、第2層としてのAl層132を形成する。具体的には、ターゲット362として用いる材料を高純度Alとし、ステージ343に設置された温度センサの検知値に基づき、基板温度が所定の温度となるように制御して、スパッタを行う。基板温度は、室温(25℃)以上300℃以下の範囲で設定することが好ましい。これによって、図5に示すように、TiN層131の表面にAl層132を形成することができる。Al層132は、層間絶縁膜16の段差を覆う程度の厚さに形成されており、Al層132の表面は平坦性が良い状態となっている。
次に、スパッタ法によって、第3層としてのAl−Si層133を形成する。具体的には、ターゲット362として用いる材料をAl−Si合金とし、ステージ343に設置された温度センサの検知値に基づき、基板温度が所定の温度となるように制御して、スパッタを行う。基板温度は、室温(25℃)以上300℃以下の範囲で設定することが好ましい。これによって、図6に示すように、Al層132の表面にAl−Si層133を形成することができる。Al層132の表面を平坦性が良い状態とすることによって、Al−Si層133の表面も平坦性が良い状態とすることができる。なお、平坦性の良いAl層132の表面にAl−Si層133を形成するため、Al−Si層133を低温でスパッタしても、Al−Si層133の表面の平坦性を確保することができる。Al−Si層133を低温でスパッタすることができるため、Siノジュールの発生が抑えられる。その結果、表面電極13と半導体基板11とのオーミック接合が確保される。
第3層であるAl−Si層133の表面に亜鉛(Zn)置換処理を行う。Zn置換処理では、100g/Lとなるように酸化亜鉛(ZnO)を500g/Lの水酸化ナトリウム(NaOH)溶液に溶解し、ジンケート処理液を調製する。このジンケート処理液中には、ジンケートイオンZnO2 2−が存在している。このジンケート処理液を用いて、ダブルジンケート処理を行う。
Zn置換膜が形成されたAl−Si層133の表面に、図8に示すように、第4層として、Ni層134を無電解めっきによって形成する。Ni層134の無電解めっきは、例えば、還元剤に次亜リン酸ナトリウムを用いるニッケル−リン合金(Ni−P)めっき等によって行うことができる。
Claims (2)
- 半導体基板と、その半導体基板の表面に積層されている表面電極とを備えており、
その表面電極の少なくとも一部が、半導体基板の表面側に形成された第1層と、第1層の表面側に形成された第2層と、第2層の表面に接する第3層と、第3層の表面側に形成された第4層と、を含んでおり、
前記第1層は、バリア金属層であり、
前記第2層は、Al層であり、
前記第3層は、Al−Si層、またはAl−Cu層、またはAl−Si−Cu層であり、
前記第4層は、はんだ接合層である半導体装置。 - 半導体基板と、半導体基板の表面に積層されている表面電極とを備えた半導体装置の製造方法であって、
半導体基板の表面にバリア金属によって第1層を形成する第1工程と、
前記第1工程の後に、第1層の表面にAlによって第2層を形成する第2工程と、
前記第2工程の後に、前記第2層の表面にAl−SiまたはAl−CuまたはAl−Si−Cuによって第3層を形成する第3工程と、
前記第3工程の後に、前記第3層の表面を亜鉛置換処理する第4工程と、
前記第4工程の後に、前記第3層の表面にはんだ接合層である第4層を無電解めっきによって形成する第5工程とを含む半導体装置の製造方法。
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JP5855361B2 (ja) * | 2011-05-31 | 2016-02-09 | 三菱電機株式会社 | 半導体装置 |
JP5684653B2 (ja) * | 2011-06-13 | 2015-03-18 | 株式会社Pfu | 画像読取装置 |
JP2017118060A (ja) * | 2015-12-25 | 2017-06-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
DE102016102493B3 (de) * | 2016-02-12 | 2017-07-20 | Infineon Technologies Ag | Halbleitervorrichtung mit einem temperatursensor, temperatursensor und verfahren zum herstellen einer halbleitervorrichtung mit einem temperatursensor |
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JP2001284525A (ja) * | 2000-03-30 | 2001-10-12 | Denso Corp | 半導体チップおよび半導体装置 |
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US20120104612A1 (en) | 2012-05-03 |
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