CN1672473A - 制造有内置器件的基板的方法、有内置器件的基板、制造印刷电路板的方法和印刷电路板 - Google Patents

制造有内置器件的基板的方法、有内置器件的基板、制造印刷电路板的方法和印刷电路板 Download PDF

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Publication number
CN1672473A
CN1672473A CNA038183455A CN03818345A CN1672473A CN 1672473 A CN1672473 A CN 1672473A CN A038183455 A CNA038183455 A CN A038183455A CN 03818345 A CN03818345 A CN 03818345A CN 1672473 A CN1672473 A CN 1672473A
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conductive pattern
transfer sheet
substrate
metal level
device built
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CNA038183455A
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CN100452342C (zh
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浅见博
大类研
草野英俊
日渡册人
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Sony Corp
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Sony Corp
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Priority claimed from JP2002223846A external-priority patent/JP3608559B2/ja
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    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H05K1/187—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding the patterned circuits being prefabricated circuits, which are not yet attached to a permanent insulating substrate, e.g. on a temporary carrier
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Abstract

披露了一种用于制造具有内置器件的板的方法、一种具有内置器件的板、一种用于制造印刷电路板的方法以及一种印刷电路板，其中，能够在绝缘层上精确地形成精细间距的导电图形，同时能够保证导电图形的尺寸稳定性，并且能够将转印薄片彻底去除。转印薄片(61)包括金属基底层(62)和将被溶解的金属层(64)。通过电镀在将被溶解的金属层(64)上形成导电图形(55)。在将具有形成的导电图形(55)的转印薄片(61)粘合到绝缘基底(51)上之后，通过将金属基底层(62)从将被溶解的金属层(64)上分离并且相对于导电图形(55)有选择地将将被溶解的金属层(64)溶解并去除的步骤，将转印薄片(61)去除。

Description

制造有内置器件的基板的方法、有内置器件的 基板、制造印刷电路板的方法和印刷电路板
技术领域
本发明涉及器件内置基板和制造器件内置基板的方法，还涉及印刷电路板和制造印刷电路板的方法，其中，通过使用转印薄片的转印方法形成导电图形。更具体地说，本发明涉及器件内置基板和制造器件内置基板的方法，并且涉及印刷电路板和制造印刷电路板的方法，这种方法在尺寸稳定性方面更优越并且通过这种方法能够形成精细间距的导电图形。
背景技术
最近几年中，随着电子装置如移动电话、PDA(个人数字助理)和膝上型计算机等的尺寸日益减小且功能日益提高，在其中使用高密度封装电子元件变得很关键。传统上讲，通过使电子元件更小而使元件的接线端的间距更精细，通过使在其上安装电子元件的印刷电路板上的导电图形更精细等措施，已经实现了高密度封装电子元件。
此外，近几年中，对通过使印刷电路板分层而能够进行三维布线的多层印刷电路板的开发正在进步，另外，对目的在于通过使电子元件如片电阻、片电容器等以及电子器件如半导体芯片等嵌入这种多层印刷电路板以便进一步提高封装效率的器件内置基板的开发也正在进步。
作为一种形成用于印刷电路板的导电图形的方法，使用转印薄片的转印方法是众所周知的。利用这种转印方法制造印刷电路板的过程主要包括：图形形成步骤，用于在转印薄片的一个表面上形成导电图形；图形转印步骤，用于在已经将转印薄片粘合到绝缘层，将导电图形夹在其间之后，去除转印薄片。
通过在绝缘层的所需位置形成用于对层进行连接的过孔，能够很容易地使通过转印方法生产的印刷电路板形成多层。
例如，作为这种常规技术，在特许公报第3051700号的日本专利中披露了利用转印方法来制造器件内置基板的方法。在下文中，将参照图13A到图13F，对制造器件内置基板的常规方法进行描述。
图13A到图13F为示出了制造器件内置基板的常规方法的逐步截面图。在绝缘基底材料31中形成用于安装半导体芯片36的空隙部分32和用于对层进行连接的过孔导体33，过孔导体33是通过用导电膏填充通孔形成的(图13A)。另一方面，在转印薄片34的一个侧面上形成要被转印到绝缘基底材料31上的导电图形35(图13B)。
这里，绝缘基底材料31由经过部分硫化的热固性树脂构成，而转印薄片34由聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)树脂薄膜等构成。此外，通过在被预先粘合到转印薄片34上的导体薄片，如铜薄片等，上进行图形蚀刻形成导电图形35。
接着，将半导体芯片36焊接到在转印薄片34上形成的导电图形35的预定位置上(图13C)。然后，将绝缘基底材料31的上表面与转印薄片34的上面具有导电图形35的侧面压合，并且将半导体芯片36收纳在空隙部分32里面，同时将导电图形35与过孔导体33连接(图13D)。将导电图形埋藏在部分经过部分硫化的绝缘基底材料31的上表面中，此后，从绝缘基底材料31上仅将转印薄片34去除。然后，通过热处理完成对基底材料31的硫化，得到器件内置基板30(图13E)。
此外，如图13F所示，通过对在其上通过与上述的关于器件内置基板的方法相似的方法分别形成了导电图形37和38的绝缘基底材料39和40进行分层叠放，得到多层印刷电路板41。
但是，在这种制造器件内置基板的常规方法中，由于转印薄片34主要由树脂薄膜构成，因此存在的问题在于，由于在处理期间在转印薄片34中引起的拉伸和扭曲，在要被转印的导电图形35的图形结构中很可能出现误差。因此，用这种制造器件内置基板的常规方法，很难适应未来向着更精细(间距更精细)的导电图形的方向进一步发展的趋势。
此外，例如按照在日本专利申请公开文本特开平9-270578中披露的，通过对粘合到转印薄片34上的金属薄片进行图形蚀刻，或者，例如按照在日本专利申请公开文本特开平10-335787中披露的，对直接通过利用溅射法等在转印薄片34上形成的金属层进行图形蚀刻，形成在转印薄片34上形成的导电图形35。作为进行蚀刻的方法，采用了湿蚀刻。
换句话说，在制造器件内置基板的常规方法中，由于在形成导电图形35的过程中使用了湿蚀刻，因此存在的问题在于将来很难形成高精度的精细间距图形。
另一方面，也可以设想由金属材料如不锈钢制成转印薄片。在这种情况下，由于与用树脂薄膜制成转印薄片的情况相比刚度更高，因此提高了导电图形的尺寸稳定性。但是，在这种情况下，存在的问题在于如果作为转印目标的绝缘基底材料的刚度很高，则很难从绝缘基底材料上去除转印薄片，并且不能适当地进行用于导电图形的转印操作。
考虑到上述问题提出了本发明，并且本发明的要点是提供了一种器件内置基板和一种用于制造器件内置基板的方法，以及一种印刷电路板和一种制造印刷电路板的方法，在这种印刷电路板中，保证了导电图形的尺寸的稳定性，使得能够在绝缘层上形成高精度的间距精细的导电图形，并且在这种印刷电路板中，转印薄片能够被彻底去除。
发明内容
在本发明中，在解决上述问题的过程中，通过使用添加方法的图形电镀技术，制造金属转印薄片并且使转印薄片具有导电性，能够形成高精度的精细间距导电图形。
当将形成的导电图形转印到绝缘层时，在已经将转印薄片和绝缘层相互粘合之后，从绝缘层上去除转印薄片。在本发明中，由于转印薄片主要由金属材料构成，因此在处理期间几乎不出现尺寸变化，并且因此确保了要被转印的导电图形的尺寸稳定性。
此外，在本发明中，主要通过溶解和去除转印薄片来实现从绝缘层上转印薄片去除。因此，即使在作为转印目标的绝缘层具有很高刚度的情况下，仍然能够确保对导电图形进行适当的转印操作。
这里，转印薄片可以这样构成，即包括一金属基底材料和一溶解物金属层，该溶解物金属层被层放成可以与金属基底材料相分离，并且在溶解物金属层上形成导电图形。金属基底材料占据了转印薄片全部厚度的主要部分，并且因此使得在处理时它具有主要的基本机械特性或材料特性。当将这种金属基底材料与溶解物金属层分开并且去除时，作为转印薄片的一部分的溶解物金属层保留在已经被转印到绝缘层上的导电图形上。因此，通过溶解和去除这个溶解物金属层，将转印薄片从绝缘层上彻底去除。在这种情况下，由于可以缩短溶解和去除转印薄片所需要的时间，因此简化了对转印薄片的去除工艺。
附图说明
图1为示意性地示出了按照本发明第一实施例的器件内置基板的结构的截面图；
图2为示出了已经将图1所示的器件内置基板多层叠放的情况的截面图；
图3中(A)到(H)为说明按照本发明第一实施例的制造器件内置基板的方法的逐步截面图，其中，(A)到(C)示出了空隙部分形成步骤，(D)到(G)示出了图形形成步骤，而(H)示出了部分图形转印步骤；
图4A到4D为说明按照本发明第一实施例的制造器件内置基板的方法的逐步截面图，其中，图4A示出了器件收纳(housing)步骤，而图4B到图4D示出了去除转印薄片的步骤；
图5A为示意性地示出了在本发明第一实施例中应用的转印薄片的结构的截面图，而图5B到5D为说明对其进行修改的截面图；
图6为说明按照本发明第一实施例的制造器件内置基板的方法的流程图；
图7中(A)到(G)为说明按照本发明第二实施例的制造印刷电路板的方法的逐步截面图，具体来说，(C)到(F)示出了图形形成步骤，而(G)示出了图形转印步骤的一部分；
图8A到8C为说明按照本发明第二实施例的制造印刷电路板的方法的逐步截面图，具体来说，示出了对转印薄片的去除过程；
图9中(A)到(H)为说明按照本发明第三实施例的制造器件内置基板的方法的逐步截面图；
图10A到10D为说明按照本发明第三实施例的制造器件内置基板的方法的逐步截面图；
图11A到11F为说明按照本发明第四实施例的制造器件内置基板的方法的逐步截面图；
图12为说明对本发明第一实施例的芯片安装步骤进行修改的主要部分的截面图；并且
图13A到13F为说明制造器件内置基板的常规方法的逐步截面图。
具体实施方式
在下文中参照附图对本发明的每个实施例进行描述。
(第一实施例)
图1到图5D示出了按照本发明第一实施例的器件内置基板50的结构。在构成绝缘层的绝缘基底材料51中已经形成了用于收纳作为电子器件的半导体芯片56的空隙部分52和用于连接绝缘基底材料51的前后侧面的通孔53和53。用导电材料59如焊锡等填充通孔53和53。
在本发明中，绝缘基底材料由主要是热塑树脂材料的树脂基底材料构成，但不限于此，可以根据应用或用途选择认为合适的绝缘基底材料。例如，可以使用浸渍了环氧树脂的玻璃纤维、浸渍了聚酰亚胺树脂的玻璃纤维或者浸渍了酚树脂的纸等。此外，也可以使用双马来酰亚胺三嗪树脂、苯并环丁烯树脂(benzo-cyclo-butene resin)和液晶聚合物等。
对于填充通孔53的导电材料59，可以用含铅的或无铅的焊锡材料，但是，从生态学的观点出发，最好使用无铅焊锡材料。作为无铅焊锡材料，添加了Bi、In、Cu、Sb的Sn-Ag合金是众所周知的。此外，作为除了焊锡材料以外的导电材料，例如，也可以使用通过在树脂中混入导电颗粒如银粉末、铜粉末等而得到的导电膏。
在绝缘基底材料51的表面上，提供了不导电的粘合剂54，并且将已经按照预定设计形成图形的导电图形55粘合到该粘合剂54上。例如，导电图形55可以由电镀的铜薄膜构成，在电气上，它既与位于空隙部分52中的半导体芯片56焊接，又与通孔53中的导电材料59连接。在本发明中，如以后将详细说明的，在绝缘基底材料51上通过转印方法形成导电图形55。
在本实施例中的半导体芯片56包括一个裸芯片，在提供在其焊接表面(有效表面)上的铝电极焊盘部分上形成金的或镀金的凸起(凸出的金属电极)57。此外，除了在图中示出的球形凸起以外，凸起57还可以是双头螺栓凸起或电镀凸起。另外，除了半导体裸芯片以外，也可以将半导体封装元件如BGA/CSP等用于本发明，在这种半导体封装元件中，按照行或者在指定区域中形成凸起。
在空隙部分52里面，在导电图形55与半导体芯片56之间形成了一个未充满的树脂层58，未充满的树脂层58例如由热固性粘合剂树脂如环氧树脂等构成。借助于未充满的树脂层58，半导体芯片56使其接头与导电图形55结合在一起。此外，也可以用相同的树脂材料将空隙部分52里面的半导体芯片56完全密封。
除了在对应于通孔53的位置形成的开口60a以外，用阻焊剂(solderresist)60覆盖导电图形55的表面一侧，并且由此使导电图形55暴露。
按照本实施例的器件内置基板50，由于导电图形55由电镀层构成，因此，能够使导电图形55的间距更精细，并且由此能够实现进一步提高封装密度。
下面，图2示出了器件内置多层基板65，其中，将按照上述方式构成的多个器件内置基板50分层叠放。在本例中，示出了将三个上述结构的器件内置基板安装在基基板66上的结构。在器件内置多层基板65中，通过将导电材料59通过阻焊剂60中的开口60a焊接到导电图形55的表面，实现了各层之间的电气和机械连接。
此外，通过用如上述的导电材料59将各层连接起来，与使用导电膏的情况相比，可以在更短的时间内完成连接，并且能够使电阻保持更低。
基基板66具有绝缘基底材料67和在绝缘基底材料67的前后表面上形成图形的上布线层70和下布线层71，并且形成用于连接这些布线层70和71的通孔镀层68。此外，用导电材料或非导电材料的填充剂69填充这些通孔的里面，由此防止所谓的pop-corn(爆米花)现象，并且提高散热效率。
如此构成的器件内置多层基板65采用了焊盘栅阵列(land grid array，LGA)结构，当被安装在母板上时，在通过阻焊剂73中的开口73a、73a暴露的下布线层71上提供外部电极，如球形凸起等。此外，还可以在最顶层的器件内置基板50的布线层(导电图形)55上安装某些其它电子器件或电子元件。
下面将参照图3到图6，对涉及本发明的制造器件内置基板50的方法进行描述。
首先，如图3(A)所示，准备好上述结构的绝缘基底材料51，并且将用于形成粘合剂材料层的粘合剂54涂到其表面(图3(B))。
由此，粘合剂54将以后被转印的导电图形55粘合到绝缘基底材料51上，粘合剂54必须是不导电的。此外，为了防止当转印导电图形55时粘合剂流入空隙部分52和通孔53，将具有低流动和高定形特性的材料用于粘合剂54。例如，这种材料的例子包括由Hitachi Chemical Co.，Ltd(日立化成社制)生产的“AS-3000”。
然后，如图3(C)所示，对绝缘基底材料51进行用于形成收纳器件的空隙部分52和用于将层连接起来的通孔53的空隙部分形成步骤(步骤S1)。例如，可以采用已知的钻孔加工技术如利用钻床和刳刨机的加工、模具冲压和激光加工等形成空隙部分52和通孔53，并且可以同时对多个板进行加工。此外，对于空隙部分52而言，要求其内部尺寸大于要安装的半导体芯片56的外部尺寸。
如图3(D)到(G)所示，随同上述的绝缘基底材料51的准备步骤一起，进行形成导电图形的步骤(步骤S2)。在本实施例中，在形成导电图形55的过程中，使用在图5A中示出的结构的转印薄片61。
转印薄片61具有三层结构，这三层分别是厚度，例如，约为100μm的铜金属基底材料62，导电的粘合剂树脂层63以及厚度，例如，约为5μm或更小的铬(Cr)溶解物金属层64。使金属基底材料62和溶解物金属层64分层叠放，以便与夹在中间的导电粘合剂树脂层63将它们相互分开。
金属基底材料62占据了转印薄片61全部厚度的主要部分，因此它具有主要的机械性能或材料性能，而对于处理来说，机械性能或材料性能是基本的。导电粘合剂树脂层63由既能够确保金属基底材料62与溶解物金属层64之间导电又使二者能够被分离并且被去除的材料构成。例如，使用形成一层的苯并***树脂。溶解物金属层64由金属薄片或金属镀层构成，并且由与导电图形55不相似的金属材料制成，以便能够相对于导电图形有选择地对其进行蚀刻。
此外，用于将金属基底材料62和溶解物金属层64二者分离并去除的结构的例子不限于上述这些，也可以采用其它结构的例子，以后将对其细节进行描述。
参照图3(D)，在上述结构的转印薄片61的溶解物金属层64一侧的表面上，形成光致抗蚀剂(photoresist)72。光致抗蚀剂72可以是干膜抗蚀剂或液体抗蚀剂。然后，通过在形成的光致抗蚀剂72上进行各种处理如曝光和显影，在光致抗蚀剂72上形成预定图案的图形，由此形成电镀抗蚀剂72A(图3(E))。
随后，将转印薄片61与电镀抗蚀剂72A一起浸入，例如，铜电解槽中，并且与图中没有示出的阴极电极连接，从而在溶解物金属层64上沉积电镀层55A(图3(F))。然后，在电镀层55A形成之后，将电镀抗蚀剂72A去除(图3(G))。由此，在转印薄片61的表面上形成由电镀层55A构成的导电图形55。
此外，电镀层55A不仅形成在转印薄片61的溶解物金属层64上，而且也形成在金属基底材料62上，但省略了对此的说明。
一般来说，与通过湿蚀刻将导电层中不需要的部分去除来形成导电图形的方法(相减法)相比，通过电镀将导电层仅沉积在需要的位置来形成导电图形的方法(相加法)能够形成更精细的图形。因此，按照本实施例，能够高精度地形成例如L/S为10μm/10μm的精细间距导电图形。
此外，在不需要精细间距导电图形的情况下，也可以通过利用如电镀等方法在溶解物金属层64上另外形成导电层并且对这个导电层进行图形蚀刻来形成导电图形。
接着，如图3(H)所示，将转印薄片61与绝缘基底材料51彼此粘合，将形成的导电图形55夹在中间，并且将导电图形55粘合到绝缘基底材料51上的粘合剂54上(步骤S3)。
这里，由于转印薄片61是金属的，与由树脂薄膜制成的常规转印薄片相比，它具有更高的强度，因此，抑制了在对转印薄片61进行处理期间的拉伸和扭曲，并且能够在具有很到的尺寸稳定性的情况下，将精细间距导电图形55粘合到绝缘基底材料51上。
此外，由于转印薄片61具有足够的强度，因此能够在比常规情况更高的负载下进行图形转印，并且减少了对转印处理限制。具体来说，由于抑制了转印时转印薄片中的局部变形，因此能够防止导电图形变形和断裂。
接着，参照图4A，进行将半导体芯片56收纳在绝缘基底材料51的空隙部分52内以及将在半导体芯片56的有效表面上形成的凸起57焊接到导电图形55上的步骤(步骤S4)。例如，利用已知的安装设备，相对于导电图形55，对半导体芯片56进行安装。
此外，在本实施例中，由于凸起57是通过在其表面上用金或镀金形成的，因此，如果将它们直接焊接到导电图形(铜)55上，则成为Au-Cu之间的焊点。因此，通过利用电镀等工艺在形成在转印薄片61上的导电图形55的表面上另外形成锡(Sn)金属膜，因而上述的焊接步骤产生Au-Sn之间的焊点，与Au-Cu之间的焊点相比，能够在较低的温度和较低的负载下对半导体芯片56进行焊接。Sn金属应该包括Sn和Sn合金(如SnAg、SnBi和SnCu等)。此外，除了Sn金属以外，通过形成NiP/Au薄膜也可以达到相似的效果。
另一方面，可以用Sn金属而不用Au来形成半导体芯片56的凸起57。在这种情况下，可以单独形成Sn金属凸起，或者，凸起可以是表面镀有Sn金属的其他金属球或树脂球。Sn金属应该包括Sn、SnAg、SnBi、SnCu、SnAgCu、SnAgBi和SnAgBiCu等。
在将半导体芯片焊接到导电图形55上之后，进行将热成形树脂如环氧树脂注入空隙部分52并且在导电图形55与半导体芯片56之间形成未充满树脂层58的步骤(图4A，步骤S5)。因此，由转印薄片61和未充满树脂层58共同支撑导电图形55。
因此，涉及本发明的“器件收纳步骤”包括将半导体芯片56焊接到导电图形55上的步骤和形成用于将焊接好的半导体芯片56密封在空隙部分52中的未充满树脂层58的步骤。
此外，焊接半导体芯片56的步骤不限于上述的一种，可以预先将半导体芯片56焊接到转印薄片61的导电图形55上，在将绝缘基底材料51和转印薄片61彼此粘合时，将焊接好的半导体芯片56收纳在空隙部分52内。在这种情况下，由于转印薄片61是金属的，因此能够抑制由半导体芯片56本身的重量所引起的变形等。
这里，如果将具有粘合性能的物质用作电镀抗蚀剂72A，则如图12所示，例如，可以将电镀抗蚀剂72A用作用于半导体芯片56的未充满树脂层。在这种情况下，仅需要使导电图形55的厚度为半导体芯片56的凸起57能够达到的距离。
接着，进行去除转印薄片61的步骤。在本实施例中，去除转印薄片61的步骤包括将金属基底材料62从溶解物金属层64分离并去除的步骤(图4B)以及将溶解物金属层64溶解并去除的步骤(图4C)。
参照图4B，将金属基底材料62与从溶解物金属层64分离并去除的步骤是利用通过导电粘合剂树脂层63将金属基底材料62与溶解物金属层64分开进行的(步骤S6)。
此外，为了将导电粘合剂树脂层63与金属基底材料62一起与溶解物金属层64分开，可以预先在导电粘合剂树脂层63的在溶解物金属层64一侧的表面上预定区域涂上隔离剂。
通过在转印薄片61的边缘，在金属基底材料62与溶解物金属层64之间的边界部分增加一个用于使分离开始的缝隙，可以很容易地进行对金属基底材料62的分离处理。此外，在进行分离金属基底材料62的处理期间，由于由粘合剂54和未充满树脂层58通过导电图形55支撑溶解物金属层64，因此能够彻底地分离和去除金属基底材料62和溶解物金属层64(图4C)。
另一方面，在溶解和去除溶解物金属层64的步骤中，利用能够溶解溶解物金属层64但不溶解导电图形55的蚀刻溶液有选择地仅将溶解物金属层64去除(图4D，步骤S7)。在本实施例中，由于导电图形55是用铜构成的，而溶解物金属层64是用铬构成的，因此，利用例如盐酸蚀刻溶液，能够仅将溶解物金属层64溶解并去除，而留下导电图形55。
因此，在本实施例中的“图形转印步骤”包括从将绝缘基底材料51与转印薄片61彼此粘合的步骤(步骤S3)到将溶解物金属层64分离和去除的步骤(步骤S7)中的各个步骤。
在完成了对转印薄片61的去除之后，如图1所示，通过丝网印刷或分配法(dispensing method)，进行用作为导电材料的导电材料59填充绝缘基底材料51的通孔53的导体填充步骤，同时进行用阻焊剂60将导电图形55表面中除了对应于形成通孔53的区域以外的部分覆盖的步骤(步骤S8)。此外，如果要得到在图2中示出的器件内置多层基板65，则进行预定的多层形成处理(步骤S9)。
由此，生产本实施例的器件内置基板50。
按照本实施例，由于转印薄片61是由金属制成的，因此，能够利用基于电镀法的图形电镀技术形成高精度的精细间距导电图形55。此外，由于转印薄片61具有预定的机械强度和耐热性，因此，实际上消除了处理或加热期间的尺寸变化，并且能够保证被转印的导电图形55的尺寸稳定性。
另外，由于在图形转印步骤中对转印薄片61的去除最终是利用通过蚀刻的溶解进行的，因此即使在绝缘基底材料51的刚度很强的情况下，也能够保证转印导电图形的操作适当进行。
此外，按照本实施例，由于这样结构的转印薄片61包括金属基底材料62和层放成能够与金属基底材料62分离的溶解物金属层64，并且由于去除转印薄片61包括将金属基底材料62从溶解物金属层64分离并去除的步骤以及将溶解物金属层64溶解并去除的步骤，因此对转印薄片61的去除变得更容易，并且因此能够预期提高生产率。
(第二实施例)
图7以及图8A到图8C示出了本发明的第二实施例。在该实施例中，将对制造涉及本发明的印刷电路板的方法进行描述。
首先，如图7(A)所示，准备好绝缘基底材料81，并且将用于形成粘合剂材料层的粘合剂84涂在其表面上(图7(B))。与在以上第一实施例中描述的绝缘基底材料51和粘合剂54相同的材料被用于本实施例的绝缘基底材料81和粘合剂84。
另一方面，与第一实施例相同，通过如图7(C)到7(F)所示的电镀，在金属转印薄片91上形成要转印到绝缘基底材料81上的导电图形85。虽然不进行详细描述，但转印薄片91具有与第一实施例中的转印薄片61相似的结构，并且包括铜的金属基底材料92、铬的溶解物金属层94以及夹在二者之间的导电粘合剂树脂层(图中省略)。
在转印薄片91的溶解物金属层94上形成通过使阻焊剂73形成图形而获得的电镀抗蚀剂73A，导电图形85包括在被电镀抗蚀剂73A标出的区域以外的区域中沉积的电镀层(铜)85A(图7(E))。通过在去除了电镀抗蚀剂73A之后将在其上形成了导电图形85的转印薄片91粘合到绝缘基底材料81上，将导电图形85转印到粘合剂84上(图7(G))。
随后，如图8A到图8C所示，进行将已经粘合到绝缘基底材料81上的转印薄片91去除的步骤。与第一实施例相同，通过将金属基底材料92从溶解物金属层94分离并且去除的步骤，以及将溶解物金属层94溶解并且去除的步骤，进行对转印薄片91的去除。具体来说，为了溶解和去除溶解物金属层94，例如，可以使用能够溶解溶解物金属层(Cr)94但不溶解导电图形(Cu)85的盐酸蚀刻剂。
如图8C所示，如此生产的印刷电路板80采用将通过电镀形成的导电图形85粘合到在绝缘基底材料81上的粘合剂84上的结构。
按照本实施例，由于转印薄片91是由金属制成的，因此能够利用基于电镀的图形电镀技术形成高精度的精细间距导电图形85。此外，由于转印薄片91具有预定的机械强度和耐热性，因此，实际上消除了处理和加热期间的尺寸变化，并且由此确保了被转印的导电图形85的尺寸稳定性。
另外，由于在图形转印步骤中对转印薄片91的去除最终是利用通过蚀刻的溶解进行的，因此，即使在绝缘基底材料81的刚度很强的情况下，也能够保证对导电图形85进行适当的转印处理。
此外，按照本实施例，由于转印薄片91被制作成包括金属基底材料92和层放成能够与该金属基底材料92分离的溶解物金属层94，并且由于去除转印薄片91包括将金属基底材料92与从溶解物金属层94分离并去除的步骤以及将溶解物金属层94溶解并去除的步骤，因此对转印薄片91的去除变得更容易，并且因此能够预期提高生产率。
(第三实施例)
图9以及图10A到图10D示出了本发明的第三实施例。在该实施例中，将对制造涉及本发明的器件内置基板的方法进行描述。注意，在附图中相同的标号表示与第一实施例相对应的部分，并且省略了对其的详细描述。
首先，如图9(A)所示，准备好绝缘基底材料51，并且将用于形成粘合剂54的粘合剂涂在其表面上(图9(B))。
随后，如图9(C)所示，对绝缘基底材料51进行用于形成用于收纳器件的空隙部分52和用于连接各层的通孔53的空隙部分形成步骤。
与用于绝缘基底材料51的准备步骤一道，进行如图9(D)到9(G)所示的形成导电图形55的步骤。
在本实施例中，在形成导电图形55的过程中，使用在图5A中示出的结构的转印薄片61。换句话说，它包括铜的金属基底材料62、铬的溶解物金属层64以及位于二者之间的导电粘合剂树脂层(图9(D))。
与上述的第一实施例相同，在图9(E)中示出的导电图形55由在转印薄片61的在溶解物金属层64一侧的表面上形成的电镀层构成。
在本实施例中，然后进行将绝缘薄膜埋藏在已经形成的导电图形的缝隙中的步骤以及使转印薄片61的在溶解物金属层64一侧的表面平整的步骤。
如图9(F)所示，在该步骤中，首先通过丝网印刷法，从形成的导电图形55的上面，将绝缘树脂如环氧树脂的绝缘薄膜87涂到转印薄片61的在溶解物金属层64一侧的整个表面上，然后进行固化。
然后，如图9(G)所示，对已经固化的绝缘薄膜87进行抛光并且暴露出导电图形55的表面。
由此，将绝缘薄膜87埋藏到导电图形55的缝隙中，并且使转印薄片61的在溶解物金属层64一侧的表面平整。
随后，如图9(H)所示，使转印薄片61与绝缘基底材料51彼此粘合，将已经形成的导电图形55夹在其间，由此将导电图形55粘合到绝缘基底材料51上的粘合剂54上。
这里，由于转印薄片61是金属的，与由树脂薄膜构成的常规转印薄片相比，它的强度更高，因此，在进行处理期间能够抑制转印薄片61的拉伸和扭曲，并且能够在具有很高的尺寸稳定性的情况下，将精细间距导电图形55适当地粘合到绝缘基底材料51上。
此外，由于转印薄片61具有足够的强度，因此能够在比常规情况更高的负载下进行图形转印，并且减少了对转印过程的限制。具体来说，由于抑制了转印时转印薄片中的局部变形，因此能够防止导电图形变形和断裂。
另外，由于通过将绝缘薄膜87埋藏在导电图形55的缝隙中而使得转印薄片61在溶解物金属层64一侧的表面平整，因此可以使与绝缘基底材料51上的粘合剂54的粘合更强，由此提高了粘合强度。
随后，如图10A所示，进行将半导体芯片56收纳在绝缘基底材料51的空隙部分52里面，并且将在半导体芯片56的有效表面上形成的凸起57焊接到导电图形55上的步骤。
在将半导体芯片56焊接到导电图形55上以后，将例如环氧树脂注入空隙部分52，由此在导电图形55与半导体芯片56之间形成未充满树脂层58。这样，由转印薄片61和未充满树脂层58共同支撑导电图形55。
此外，由于半导体芯片56的凸起是在其表面上用金或镀金形成的，通过在铜的导电图形55的表面上形成Sn金属或Ni/Au金属的金属镀层，可以实现在低温和低负载环境下对芯片进行安装。
在这种情况下，在本实施例中，由于绝缘薄膜87被埋藏在导电图形55与导电图形55之间，因此能够防止由金属镀层各向同性的生长所引起的跨越图形的桥接现象(bridge phenomenon)。
此外，通过在形成金属镀层之前对导电图形55上的与芯片连接焊盘对应的区域进行软蚀刻，有效之处在于形成金属镀层将不包括使转印表面平整的过程。
接着，将转印薄片61去除。去除转印薄片61包括将金属基底材料62从溶解物金属层64分离并去除的步骤(图10B)，以及将溶解物金属层64溶解并去除的步骤(图10C)。
由于是通过与在上面的第一实施例中描述的方法相似的方法来进行这个去除转印薄片61的步骤的，因此这里省略了对它的描述。
在完成了对转印薄片61的去除之后，如图10D所示，进行通过丝网印刷或分配法，用作为导电材料的导电材料59填充绝缘基底材料51的通孔53，同时用阻焊剂(solder resist)60将导电图形55表面除了对应于形成通孔53的区域以外的部分覆盖的步骤。
由此，生产本实施例的器件内置基板50’。
按照本实施例，可以得到与上述的第一实施例的优点相似的优点。
具体来说，按照本实施例，由于导电图形55到绝缘基底材料51的焊接能够具有很高粘合强度，因此能够得到耐久性优良的器件内置基板50’。
此外，在将金属镀层形成在导电图形55的芯片安装区域中的情况下，由于能够防止图形内的短路，因此能够适应安装焊盘间距窄的半导体芯片。
(第四实施例)
接着，图11A到图11F示出了本发明的第四实施例。在该实施例中，将对制造涉及本发明的器件内置基板的方法进行描述。注意，附图中相同的标号表示与上述的第一实施例相对应的部分，并且省略了对其的详细描述。
在本实施例中，如图11A所示，按照在上述的第三实施例中描述的用于平整的绝缘薄膜87，构成当在转印薄片61的在溶解物金属层64一侧的表面上沉积导电图形55时形成的用于电镀的电镀抗蚀剂72A(图11B)。
电镀抗蚀剂72A是这样的，如图11C所示，在形成导电图形55时，将导电图形55中的缝隙填满。
因此，如图11D所示，在形成了导电图形55之后，能够在不必单独形成用于平整的绝缘薄膜的情况下，将导电图形55粘合到绝缘基底材料51上，因此，可以得到与上述的第三实施例的优点相似的优点。
此外，通过将具有粘合性的材料用于电镀抗蚀剂72A，能够使导电图形55到绝缘基底材料51的粘合具有更高的粘结强度。
此外，在这种情况下，如果导电图形55的布线密度相对较低，则在绝缘基底材料51上可以没有粘合剂54。
由于在粘合导电图形55之后的芯片安装过程(图11E)和去除转印薄片的过程(图11F)与上述的第一实施例的过程相似，因此这里省略了对其的描述。
在上文中，已经对本发明的实施例进行了描述，但是，本发明决不仅限于此，可以根据本发明的技术精神进行各种修改。
例如，在上述的各个实施例中，如图5A所示，转印薄片61和91是在使导电粘合剂树脂层63位于金属基底材料62和92与溶解物金属层64和94之间，从而使金属基底材料62和92能够与溶解物金属层64和94彼此分离的情况下构成的，但是，转印薄片61和91的结构不限于此，只要结构允许金属基底材料与溶解物金属层彼此分离，可以采用任何结构。
例如，转印薄片101的结构，在图5B中示出了其截面结构，为将铬镀层的中间层103夹在铜的金属基底材料102和镍镀层的溶解物金属层104之间，按照这样的方式，利用镀层的应力差使溶解物金属层(Ni)104与中间层(Cr)103在分界面分离。在已经将金属基底材料102和中间层103去除之后，在溶解并且去除溶解物金属层(Ni)104的步骤中，如果要被转印的导电图形55是铜的，则可以使用例如经过硫酸化的过氧化氢蚀刻溶液。
此外，在图5B中，如果分别由铬镀层和镍钴合金镀层形成中间层103和溶解物金属层104，则可以很容易地在其分界面将层103和104中的每个层分离。在这种情况下，在溶解和去除溶解物金属层(Ni/Co)104的步骤中，如果要被转印的导电图形是铜的，则可以使用例如具有经过硫酸化的过氧化氢溶液基的软蚀刻试剂。
此外，在每个上述实施例中，描述了去除转印薄片61和91的例子，其中包括分离和去除金属基底材料62和92的步骤以及溶解和去除溶解物金属层64和94的步骤，但是，也可以将转印薄片作为一个整体进行溶解并去除。在这种情况下，可以用相似的金属构成转印薄片，或者，可以用不同金属的分层体来构成转印薄片。具体来说，在后一种情况下，可以利用不同的蚀刻溶液有选择的对每个金属层进行蚀刻。
例如，图5C示出了由彼此不同的第一和第二金属层112和114构成的转印薄片111的结构。这里，假设第一金属层112是铜的，而第二金属层114是镍的，利用碱性蚀刻剂，可以仅对第一金属层(Cu)112进行蚀刻。相似地，如果第一金属层112是铜的，而第二金属层114是铝的，则通过将温的硫酸溶液用作蚀刻溶液，可以仅对第一金属层(Cu)112进行蚀刻。第一和第二金属层112和114的其他组合的例子包括镍和金以及铜和铬等。
此外，也可以将这些不同金属组合的例子用作构成溶解物金属层(64、94)的金属与构成导电图形(55、85)的金属之间的组合例子。
另外，转印薄片可以包括两层，即金属基底层和溶解物金属层，并且可以利用各层之间的受热膨胀系数差来使这些层中的每个层分离。或者，如在图5D中示出的转印薄片121中，可以使热泡沫层123位于金属基底层122与溶解物金属层124之间，通过将热泡沫层123加热到预定温度的处理使热泡沫层123发泡，可以将金属基底层122与溶解物金属层124分离。
如上所述，按照本发明的制造器件内置基板的方法和制造印刷电路板的方法，由于将金属薄片用作转印薄片，能够形成高精度的精细间距导电图形，并且还可以在确保尺寸稳定性的同时将已经形成的导电图形转印到绝缘层上。此外，由于对转印薄片的去除最终是通过溶解和去除转印薄片实现的，因此能够保证对导电图形进行适当的转印处理。
此外，由于转印薄片包括金属基底材料和层放成能够与该金属基底材料分离的溶解物金属层，并且由于对这个转印薄片的去除包括使金属基底材料从溶解物金属层分离并去除的步骤以及将溶解物金属层溶解并去除的步骤，因此，就时间而言，减少了去除转印薄片的步骤所需要的成本，并且预期生产率能够提高。
另外，按照本发明的器件内置基板和印刷电路板，由于用电镀层构成在绝缘层上形成的导电图形，因此可以使导电图形的间距更精细，并且能够提高封装密度。

Claims (23)

1.一种用于制造器件内置基板的方法，该器件内置基板具有形成在其上的绝缘层、导电图形、形成在其中的空隙部分、以及收纳在所述空隙部分中并且与所述导电图形连接的电子器件，所述方法包括：
空隙部分形成步骤，用于在所述绝缘层中形成所述空隙部分；
图形形成步骤，用于在由金属制成的转印薄片的表面上形成所述导电图形；
图形转印步骤，用于将所述转印薄片与所述绝缘层彼此粘合，使所述导电图形夹在其中，并且将所述转印薄片去除；以及
器件收纳步骤，用于将所述电子器件收纳在所述空隙部分中，使所述电子器件与所述形成的导电图形连接；
并且，其特征在于，对所述转印薄片的去除包括将所述转印薄片的至少一部分溶解并去除的步骤。
2.如权利要求1所述的制造器件内置基板的方法，其特征在于：
所述转印薄片包括一金属基底和一溶解物金属层，该溶解物金属层被层放成相对于所述金属基底材料可分离并且在其上形成所述导电图形；并且
对所述转印薄片的去除包括：从所述溶解物金属层上分离并去除所述金属基底材料的步骤；以及溶解并去除所述溶解物金属层的步骤。
3.如权利要求1所述的制造器件内置基板的方法，其特征在于：
以电镀的方法执行所述图形形成步骤。
4.如权利要求1所述的制造器件内置基板的方法，其特征在于：
所述图形形成步骤包括：在所述转印薄片的一个表面上形成导电图形的步骤；以及将绝缘材料埋藏在所述形成的导电图形的缝隙中并且使所述转印薄片的所述一个表面平整的步骤。
5.如权利要求1所述的制造器件内置基板的方法，其特征在于：
在所述图形转印步骤之前，将粘合剂材料涂在所述绝缘层的一个表面上。
6.如权利要求1所述的制造器件内置基板的方法，其特征在于：
在将所述转印薄片与所述绝缘层彼此粘合之后但在将所述转印薄片从所述绝缘层上去除之前，进行所述器件收纳步骤。
7.如权利要求1所述的制造器件内置基板的方法，其特征在于：
所述器件收纳步骤包括：将所述电子器件收纳在所述空隙部分中并且与所述导电图形连接的步骤；以及将密封树脂注入到所述电子器件与所述导电图形之间的间隙中的步骤。
8.如权利要求2所述的制造器件内置基板的方法，其特征在于：
由不同的金属材料制成所述溶解物金属层和所述导电图形，并且利用能够溶解所述溶解物金属层但不能溶解所述导电图形的蚀刻剂，完成所述溶解并去除所述溶解物金属层的步骤。
9.如权利要求1所述的制造器件内置基板的方法，其特征在于：
所述空隙部分形成步骤包括：与所述空隙部分一起形成用于连接所述绝缘层的两个表面的通孔的步骤；以及将导电材料填入所述通孔的步骤。
10.如权利要求9所述的制造器件内置基板的方法，所述方法的其特征在于还包括：
在所述填充导电材料的步骤之后，在所述通孔处多路电连接使所述形成的器件内置基板分层叠放。
11.一种器件内置基板，该器件内置基板具有形成在其上的绝缘层、导电图形、形成在其中的空隙部分、以及收纳在所述空隙部分中并且与所述导电图形连接的电子器件，其特征在于：
所述导电图形包括与所述绝缘层的上表面粘合的电镀层。
12.如权利要求11所述的器件内置基板，其特征在于：
所述导电图形是通过将形成图形的电镀膜沉积在由金属制成的转印薄片上而得到的被转印的层。
13.如权利要求11所述的器件内置基板，其特征在于：
将绝缘材料埋藏在所述形成的导电图形的缝隙中，并且使所述绝缘层的上表面平整。
14.如权利要求13所述的器件内置基板，其特征在于：
所述绝缘材料是电镀抗蚀剂。
15.如权利要求11所述的器件内置基板，其特征在于：
在所述电子器件与所述导电图形之间形成未充满树脂层。
16.如权利要求11所述的器件内置基板，其特征在于：
使在其上形成了所述导电图形的多个绝缘层彼此分层叠放。
17.一种用于制造印刷电路板的方法，所述方法包括：
图形形成步骤，用于在转印薄片的表面上形成一导电图形；
图形转印步骤，用于将所述转印薄片粘合到所述绝缘层上，其中将所述导电图形夹在其间，并且去除所述转印薄片；其特征在于：
所述转印薄片是由金属制成的，并且对所述转印薄片的去除包括将所述转印薄片的至少一部分溶解并去除的步骤。
18.如权利要求17所述的制造印刷电路板的方法，其特征在于：
所述转印薄片包括一金属基底和一溶解物金属层，该溶解物金属层被层放成相对于所述金属基底材料可分离并且在其上形成所述导电图形；并且
对所述转印薄片的去除包括：从所述溶解物金属层上分离并去除所述金属基底材料的步骤；以及溶解并去除所述溶解物金属层的步骤。
19.如权利要求17所述的制造印刷电路板的方法，其特征在于：
以电镀的方法执行所述图形形成步骤。
20.如权利要求17所述的制造印刷电路板的方法，其特征在于：
在所述图形转印步骤之前，将粘合剂材料涂在所述绝缘层的一个表面上。
21.如权利要求18所述的制造印刷电路板的方法，其特征在于：
由不同的金属材料制成所述溶解物金属层和所述导电图形，并且利用能够溶解所述溶解物金属层但不能溶解所述导电图形的蚀刻剂完成所述溶解并去除所述溶解物金属层的步骤。
22.一种印刷电路板，该印刷电路板具有绝缘层和形成在其上的导电图形，其特征在于：
所述导电图形包括粘合到所述绝缘层的上表面上的一电镀层。
23.如权利要求22所述的印刷电路板，其特征在于：
所述导电图形是通过将形成图形的电镀膜沉积在由金属制成的转印薄片上而得到的被转印的层。
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WO2004014114A1 (ja) 2004-02-12
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