CN1641831A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN1641831A
CN1641831A CNA2004100818100A CN200410081810A CN1641831A CN 1641831 A CN1641831 A CN 1641831A CN A2004100818100 A CNA2004100818100 A CN A2004100818100A CN 200410081810 A CN200410081810 A CN 200410081810A CN 1641831 A CN1641831 A CN 1641831A
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semiconductor device
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wiring pattern
resin
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今井隆浩
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Seiko Epson Corp
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Abstract

一种半导体装置制造方法，具有多个电极(22)和包含配线图案(12)的配线基板(10)，使搭载到配线基板(10)上的半导体芯片(20)之间的树脂(30)，以树脂(30)沸点以下的温度固化，直到固化反应率达到80％以上，使配线图案(12)和电极(22)接触。然后，将电极(22)和配线图案(12)进行共晶合金连接。由此提供一种可靠性高的半导体装置制造方法。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
众所周知，使半导体芯片的电极和配线基板的配线图案接触，通过树脂的收缩力保持电极和配线图案间的电连接。此时，如果电极和配线图案结合坚固，就能制造出可靠性高的半导体装置。
专利文献1：特开平2-7180号公报。
发明内容
本发明的目的在于提供可靠性高的半导体装置制造方法。
(1)本发明的半导体装置制造方法，包括：工序一，具有多个电极和含有配线图案的配线基板，使搭载到上述配线基板上的半导体芯片之间的树脂，以上述树脂沸点以下温度进行固化，直到固化反应率达到80％以上，使上述电极和上述配线图案接触；及
工序二，将每个上述电极和上述配线图案进行共晶合金连接。
根据本发明，以树脂沸点以下的温度进行固化树脂工序。因此，能不产生气泡而使树脂固化。
另外，树脂固化后，由于进行共晶合金连接，电极和配线图案能坚固地固定。
(2)在该半导体装置制造方法中，
也可以边压焊上述电极和上述配线图案边进行固化上述树脂的工序。
(3)在该半导体装置制造方法中，
也可以边在上述配线基板和上述半导体芯片中的至少一侧施加超声波振动边进行固化上述树脂的工序。
(4)在该半导体装置制造方法中，
也可以边压焊上述电极和上述配线图案边进行上述共晶合金连接工序。
(5)在该半导体装置制造方法中，
也可以边在上述配线基板和上述半导体芯片中的至少一侧施加超声波振动边进行上述共晶合金连接工序。
附图说明
图1是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图2是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图3是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图4是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图5是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图6是用于说明与应用了本发明的实施方式相关的半导体装置制造技术的图。
图7是用于说明安装与本发明的实施方式相关的半导体装置的电路基板的图。
图8是表示具有与本发明的实施方式相关的半导体装置的电子设备。
图9是表示具有与本发明的实施方式相关的半导体装置的电子设备。
图中：10-配线基板，12-配线图案，20-半导体芯片，22-电极，30-树脂，50-共晶合金层。
具体实施方式
下面参照附图说明应用了本发明的实施方式。但是，本发明并不只限于以下的实施方式。
图1～图6是用于说明与应用了本发明的实施方式相关的半导体装置制造方法的图。本实施方式的半导体装置制造方法也可以包含准备配线基板10的工序。图1是用于说明配线基板10的图。配线基板10的材料没有特别的限定，可以由有机系(例如，环氧基板)，无机系(例如，陶瓷基板，玻璃基板)或它们的复合构成(例如，玻璃环氧基板)构成。配线基板10也可以是刚性基板，此时，配线基板10也可以称为插接件。或者，配线基板也可以是聚酯基板、聚酰亚胺基板等弹性基板。另外，配线基板10也可以是COF(Chip On Film)用基板。配线基板10可以是单层构成的单层基板，也可以是具有层叠多层的层叠基板。并且，关于配线基板10的形状或厚度也没有特殊的限定。
配线基板10具有配线图案12(参照图1)。配线图案12可以层叠铜(Cu)，铬(Cr)，钛(Ti)，镍(Ni)、钛钨(Ti-W)，金(Au)，铝(Al)，镍钒(NiV)和钨(W)中的任意一种，或者以任意一种的一层而形成。也可以使配线基板10的一侧面和其他面电连接，形成配线图案12。例如，如图1所示，配线图案12也可以具有焊盘13、15。此时，焊盘13是设置在配线基板10一侧面的焊盘，焊盘15是设置在配线基板10另一面上的焊盘。并且，焊盘13和焊盘15是电连接的，也可以实现配线基板10的两面的电连接。并且，此时，包括焊盘13、15也可以称为配线图案12。准备层叠基板作为配线基板10时，配线图案12也可以设置在各层之间。并且，配线图案12的形成方法没有特别的限定。例如，可以通过溅射等形成配线图案12，也可以应用以无电解镀覆形成配线图案12的添加法。配线图案12(焊盘13、15)也可以用焊锡，锡，金等镀覆形成。
本实施方式的半导体装置制造方法如图2和图3所示，也可以包含将半导体芯片20搭载到配线基板10的工序上。半导体芯片20具有多个电极22。电极22也可以和半导体芯片20内部电连接。半导体芯片20也可以具有由晶体管和存储元件等构成的集成电路24，电极22也可以和集成电路24电连接。在本实施方式的半导体装置制造方法中，搭载半导体芯片20，使电极22和配线图案12(焊盘13)接触。例如，如图2所示，将半导体芯片20由焊接工具42保持，使电极22对着配线图案12进行定位。并且如图3所示，通过将焊接工具42向配线基板12推下，也可以使电极22和配线图案12接触。在本实施方式的半导体装置制造方法中，如图2所示，也可以在配线基板10上设置树脂30后搭载半导体芯片20。也就是说，也可以通过半导体芯片20边压开树脂30边搭载半导体芯片20。由此，如图3所示，也可以在配线基板10和半导体芯片20之间设置树脂30。此时，对于树脂30来说，如图2所示，也可以利用糊状树脂。但是，与此不同，也可以利用膜状树脂(图中未示)。树脂30的材料没有特别的限定，可以利用已经公知的任意一种材料。树脂30也可以是不含导电粒子的树脂(NCF或NCP)。并且，设置树脂30的方法并不局限于此。例如，也可以将半导体芯片20搭载到配线基板10上之后，在配线基板10和半导体芯片20之间注入树脂30。
本实施方式的半导体装置制造方法，包括将设置在配线基板10和半导体芯片20之间的树脂，以树脂30沸点以下的温度进行固化，直到固化反应率达到80％以上的工序。在固化树脂30工序中，如图4所示，也可以形成树脂部32。通常，树脂如果固化反应率超过80％，就难以消除内部所包含的气泡。可是，在本实施方式所涉及的半导体装置制造方法中，将树脂30以沸点以下的温度加热使其固化。因此，能使树脂30不产生气泡而固化。由此，能够形成内部没有气泡的树脂部32。例如，通过加热器44(参照图3)，加热焊接工具42，由该热量也可以使树脂30固化。也可以边压焊半导体芯片20的电极22和配线图案12(焊盘13)边进行固化树脂30的工序。由此，能防止在电极22和配线图案12之间残留树脂30，因此，能够制造电气可靠性高的半导体装置。例如，也可以通过推压部46(参照图3)将半导体芯片20向配线基板10推压，压焊电极22和配线图案12。或者，边施加超声波振动边进行树脂固化工序。由此也能防止在电极22和配线图案12之间残留树脂30，因而能制造电气可靠性高的半导体装置。例如，也可以通过没有图示的超声波振动装置振动焊接工具42来施加超声波振动。或者，也可以振动图中未示的支撑台，施加超声波振动。
本实施方式的半导体装置制造方法包含共晶合金连接电极22和配线图案12的工序。如图5所示，也可以通过电极22和配线图案12形成共晶合金层50。也就是说，也可以使电极22和配线图案12接触，加热，形成共晶合金层50(参照图5)。此时，也可以由电极22的前端面和配线图案12的表面(也可以有镀覆层)形成共晶合金层50。由此，使电极22和配线图案12坚固地结合，能够制造可靠性高的半导体装置。并且，共晶合金层50也可以以树脂30沸点以上的温度加热形成。构成共晶合金层50的共晶合金的种类由电极22的材料和配线图案12(或图中未示的镀覆层)材料决定。构成共晶合金层50的共晶合金可以是例如，Au-Au合金，Au-Sn合金等，但是并不仅限于此。并且，本工序是在树脂30固化工序之后进行。也就是说，通过本实施方式的半导体装置制造方法形成共晶合金工序前，固化树脂30，形成树脂部32。因此，即使为了形成共晶合金层加热时，电极22和配线图案12(焊盘13)能保持相对的状态，因此能够便于制造出可靠性高的半导体装置。并且也可以边压焊电极22和配线图案12边进行共晶合金连接工序。或者，也可以边施加超声波振动边进行共晶合金连接工序。因为由此能稳定的形成共晶合金，能够制造可靠性高的半导体装置。
并且，也可以经过树脂30完全固化工序、在配线图案12(焊盘15)上设置外部端子52的工序、检查工序、冲孔工序等，如图6所示，制造半导体装置1。图7表示安装了半导体装置1的电路基板1000。另外，作为具有由本实施方式的半导体装置制造方法所制造的半导体装置的电子设备，图8表示笔记本式个人计算机2000，图9表示便携电话机3000。
并且，本发明并不仅限于上述的实施方式，可以有各种变形。例如，和在实施方式中说明过的构成在实质上含有同样的构成(例如，功能，方法和结果一样的构成，或目的和效果一样能的构成)。还有，本发明包括替换实施方式中所说明过的构成的非本质部分的构成。还有，本发明包含和在实施方式中所说明过的构成具有一样作用效果的构成或能达到同样性能同样目的。还有，本发明包含添加在实施方式中所说明过的公开技术的构成。

Claims (5)

1、一种半导体装置制造方法，其特征在于，包括：
工序一，具有多个电极和含有配线图案的配线基板，使搭载到上述配线基板上的半导体芯片之间的树脂，以上述树脂沸点以下温度进行固化，直到固化反应率达到80％以上，使上述电极和上述配线图案接触；及
工序二，然后将每个上述电极和上述配线图案进行共晶合金连接。
2、根据权利要求1所述的半导体装置制造方法，其特征在于，
上述半导体装置制造方法，边压焊上述电极和上述配线图案边进行上述树脂固化。
3、根据权利要求1所述的半导体装置制造方法，其特征在于，
上述半导体装置制造方法，边在上述配线基板和上述半导体芯片中的至少一侧施加超声波振动边进行上述树脂固化。
4、根据权利要求1所述的半导体装置制造方法，其特征在于，
上述半导体装置制造方法，边压焊上述电极和上述配线图案边进行上述共晶合金连接。
5、根据权利要求1～4中任意一个所述的半导体装置制造方法，其特征在于，
上述半导体装置制造方法，边在上述配线基板和上述半导体芯片中的至少一侧施加超声波振动边进行上述共晶合金连接。
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