TWI390646B - 電氣元件之安裝方法及安裝裝置 - Google Patents

電氣元件之安裝方法及安裝裝置 Download PDF

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TWI390646B
TWI390646B TW097146678A TW97146678A TWI390646B TW I390646 B TWI390646 B TW I390646B TW 097146678 A TW097146678 A TW 097146678A TW 97146678 A TW97146678 A TW 97146678A TW I390646 B TWI390646 B TW I390646B
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electrical component
less
kgf
pressing
mounting
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TW200937548A (en
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Kazunori Hamazaki
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Dexerials Corp
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Description

電氣元件之安裝方法及安裝裝置
本發明是有關於一種將半導體晶片等電氣元件安裝在配線基板上之安裝方法及安裝裝置，且特別是有關於一種使用接著劑安裝電氣元件之安裝方法及安裝裝置。
近年來，隨著做為攜帶電話機等各式各樣電子機器急速普及，產生對電子機器之小型化與薄型化之要求。為了實現小型化與薄型化，必須將大型積體電路(LSI，Large Scale Integration)晶片等各種電氣元件以高密度安裝在配線基板上。
隨著在配線基板上之電氣元件安裝，亦即軟性印刷電路板(Flexible Printed Circuit；FPC)之普及與高密度安裝之要求，電氣元件以晶片狀態在配線基板上安裝，亦即裸晶片安裝之進行增多。又，做為如此將裸晶片在配線基板上直接安裝之方法，已知有使用接著劑之方法。
例如使用非導電性接著薄膜(Non-Conductive Film；NCF)安裝，係在貼附非導電性接著薄膜之配線基板上搭載電氣元件後，使用金屬或陶瓷等構成之平坦硬質頭對電氣元件加壓以及加熱而使該非導電性接著薄膜硬化而進行熱壓著安裝。
然而，如此使用硬質頭對電氣元件加壓以及加熱之安裝中，熱壓著時對於電氣元件周圍接著劑之圓角部加熱不足，導致接續信賴性低落，另外，還有複數電氣元件安裝困難之問題。
因此，近年來，已有提案使用矽膠等彈性體構成之平坦彈性體頭對電氣元件進行熱壓著，在電氣元件之加壓面施加均等壓力，而提升接續信賴性之技術(例如參照日本特許文獻1)。特許文獻1(日本特開2005-32952號公報)中，記載有在彈性體為高彈體之場合中，橡膠硬度未滿40，則對電氣元件之壓力不足，接著劑之初期抵抗以及接續信賴性差；又，橡膠硬度較80大，則對圓角部之壓力不足，接著劑之結著樹脂發生無效而接續信賴性差。因此，使用彈性體頭進行安裝，該彈性體頭之橡膠硬度為40～80較佳。
因此，近年來，隨著電子機器之小型化與薄型化，輕量化之要求增高，安裝電子元件之厚度也變薄。
由於這種狀況，本案發明人發現，在使用熔體黏度低之非導電性接著薄膜等非導電性接著劑安裝厚度較薄之電氣元件之場合，使用以特許文獻1中記載之較佳值做為橡膠硬度之彈性體頭，在熱壓著後產生之電氣元件之彎曲量顯著增大，而對接續信賴性帶來影響。
本發明係鑑於此一事實，而提供一種電氣元件之安裝方法及安裝裝置，對使用不含導電性粒子之非導電性接著劑，以彈性體進行熱壓著安裝時之新安裝條件進行提案，可大幅降低在熱壓著後產生之電氣元件之彎曲量，並提升接續信賴性。
本案發明人係對將厚度在200μm以下之薄型電氣元件在配線基板上安裝時，使用不含導電性粒子且最低熔體黏度低之非導電性接著劑熱壓著之方法進行重覆試誤，找出使熱壓著後電氣元件之彎曲量大幅降低之彈性體頭之條件，而完成本發明。
亦即，為達成上述目的，本發明之電氣元件之安裝方法，係將電氣元件在配線基板上以熱壓著安裝，包括：在基台上載置之該配線基板上載置最低熔體黏度在1.0×103 Pa‧s以下之非導電性接著劑，並在該非導電性接著劑上載置厚度在200μm以下之該電氣元件之第一工程；以及以具有橡膠硬度60以下之高彈體構成之壓著部之熱壓著頭對該電氣元件加壓之第二工程。
又，為達成上述目的，本發明之電氣元件之安裝裝置，係電氣元件在配線基板上以熱壓著安裝，包括：基台，載置該配線基板；以及熱壓著頭，在該基台上載置之該配線基板上載置最低熔體黏度在1.0×103 Pa‧s以下之非導電性接著劑，並在該非導電性接著劑上載置厚度在200μm以下之該電氣元件之狀態，對該電氣元件加壓，將該電氣元件在該配線基板上熱壓著；其中，該熱壓著頭係具有橡膠硬度60以下之高彈體構成之壓著部。
本發明之電氣元件之安裝方法及安裝裝置，係使用最低熔體黏度低而在熱壓著時流動性大之非導電性接著劑，構成熱壓著頭之壓著部之橡膠硬度小，因而在熱壓著時避免不必要之非導電性接著劑之結著樹脂從電氣元件之下面區域向外部排除。因此，本發明之電氣元件之安裝方法及安裝裝置，在熱壓著後可達到非導電性接著劑之結著樹脂在電氣元件之下面區域確實殘留之狀態。
本發明係在熱壓著後可達到非導電性接著劑之結著樹脂在電氣元件之下面區域確實殘留之狀態，可大幅降低在熱壓著後產生之電氣元件之彎曲量，防止無效發生，並提升接續信賴性。
為讓本發明之上述內容能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下：
以下請參照相關圖式，詳細說明本發明適用之具體實施例。
本實施例係例如在印刷配線基板等配線基板上安裝半導體晶片等電氣元件之電氣元件之安裝裝置。特別是，該安裝裝置係使用彈性體頭做為將厚度在既定值以下之電氣元件進行熱壓著之頭，在使用最低熔體黏度在既定值以下之不含導電性粒子之非導電性接著劑之場合，根據最適合之安裝條件進行安裝。
又，以下為便於說明，使用非導電性接著薄膜(Non-Conductive Film；NCF)做為非導電性接著劑。非導電性接著薄膜係以不含導電性粒子之薄片狀熱硬化性樹脂做為主素材，透過加壓及加熱，具有接著機能與絕緣機能。
安裝裝置係如第1圖所示，包括載置形成有配線圖案100a之配線基板100之基台11，以及對做為設有打線金凸塊等凸塊200a之電氣元件之IC晶片200加壓以及加熱之熱壓著頭12。
熱壓著頭12包括具有為熱壓著IC晶片200之平坦壓著面14a之壓著部14，至少一部分壓著部14係由既定之彈性體所構成。具體而言，熱壓著頭12係具有由既定之金屬等所構成之頭本體15，其內部設有未圖示之加熱用加熱器而構成。在頭本體15上，與基台11相對之區域形成凹部15a，在該凹部15a，由盤狀之彈性體形成之壓著部14係密著於該凹部15a而安裝。
壓著部14中，其壓著面14a係與基台11之平坦壓著面平行而配設。又，壓著部14中，壓著面14a之面積係較IC晶片200之頂面200b之面積大而形成，且厚度係至少為IC晶片200之厚度相同以上而形成。又，由於本發明對象之IC晶片200，其厚度在200μm以下，若壓著部14厚度在200μm以上，即可對應本發明對象之IC晶片200。
又，做為構成壓著部14之彈性體，由熱壓著後大幅降低產生之IC晶片200之彎曲量且提升接續信賴性之觀點，使用橡膠硬度60以下較佳。在此，如後所述，非導電性接著薄膜300之熔體黏度低為起因。亦即，非導電性接著薄膜300之熔體黏度低時，介於配線基板100與IC晶片200之間之結著樹脂300a熱壓著時流動性大，使結著樹脂300a成為容易從IC晶片200之下面區域向外部排除之狀態。在此狀態中，使用過大橡膠硬度之彈性體構成壓著部14之場合，結著樹脂300a之排除容易進行，而使熱壓著後產生之IC晶片200之彎曲量變大，接續信賴性降低。因此，安裝裝置中，為避免如此不妥，使用橡膠硬度60以下做為構成壓著部14之彈性體。另一方面，做為橡膠硬度之下限值，由避免耐熱性低落而使橡膠特性之觀點，15左右較佳。又，做為構成壓著部14之彈性體，若橡膠硬度在60以下，可使用天然橡膠或合成橡膠等任何高彈體，然而由耐熱性或耐壓性之觀點，使用矽膠較佳。
如此之熱壓著頭12，係由未圖示之驅動機構可在上下方向移動而構成，如第2圖所示，由向下方降下至與IC晶片200之頂面200b或側面抵接為止，對配設於與基台11之間之IC晶片200加壓。
使用如此之安裝裝置進行IC晶片200之安裝，係在基台11上載置配線基板100，在該配線基板100上，載置由既定之結著樹脂300a形成之非導電性接著薄膜300。又，該非導電性接著薄膜300做為接著劑之最低熔體黏度係在1.0×103 Pa‧s以下。又，非導電性接著薄膜300做為接著劑之最低熔體黏度之下限值，係以1.0×102 Pa‧s左右為現實值。又，安裝裝置中，在非導電性接著薄膜300上載置IC晶片200，藉由未圖示之保護薄膜，將該熱壓著頭12向下方降下至IC晶片200之頂面200b或側面與熱壓著頭12之壓著面14a抵接為止而加壓且加熱器13發熱，以既定之條件進行假壓著，而以以下之條件進行本壓著。
亦即，安裝裝置中，在本壓著時，在IC晶片200側以既定溫度加熱，並以較該既定溫度高之溫度在配線基板100側加熱。具體而言，安裝裝置係由未圖示之既定控制裝置，控制在熱壓著頭12設置之加熱器將壓著部14之溫度定為100℃左右，控制在基台11設置之加熱器13將基台11之溫度定為200℃左右，而將非導電性接著薄膜300之結著樹脂300a之溫度加熱至180℃左右。又，基台11之加熱方法，一般係由最初加熱器13發熱而將基台11之溫度維持在既定溫度之持續加熱方式，或是由初期時設定於常溫或不會使非導電性接著薄膜300硬化之溫度狀態開始基台11之加熱之脈衝式加熱方式，然而安裝裝置可適用任一種方式。又，安裝裝置係在加熱時對IC晶片200加壓。又，本壓著時之下壓的力量係對一個IC晶片200為5kgf以上15kgf以下(50N以上150N以下)左右，10秒以上加壓較佳。
如此，安裝裝置中，使用最低熔體黏度在1.0×103 Pa．s以下之非導電性接著薄膜300對厚度在200μm以下之IC晶片200安裝之場合，由橡膠硬度60以下之高彈體做成之壓著部14進行加壓，可避免非導電性接著薄膜300之結著樹脂300a之不必要排除，大幅降低在熱壓著後產生之IC晶片200之彎曲量，又，可防止無效發生並提升接續信賴性。
又，該安裝裝置中，由橡膠硬度60以下之高彈體做成之壓著部14進行加壓，對IC晶片200之頂面200b施加既定之壓力，並對該IC晶片200之側方之圓角部300b， 以相對於頂面200b之壓力較小之壓力均等施加。如此，安裝裝置中，可對IC晶片200與配線基板100之接續部分施加充分之壓力，另一方面，也可對IC晶片200周圍之圓角部300b不會產生無效而加壓，產生高信賴性，可使用非導電性接著薄膜300進行IC晶片200之接續。特別是，安裝裝置中，壓著部14之厚度係為IC晶片200之厚度相同以上而形成，可對IC晶片200之頂面200b與側面之圓角部300b以最適當之壓力確實進行加壓。
又，該安裝裝置中，在熱壓著時，由在IC晶片200側以既定溫度加熱，並以較該既定溫度高之溫度在配線基板100側加熱，可對IC晶片200周圍之圓角部300b充分加熱，可確實防止無效發生。
另外，該安裝裝置中，使用不含導電性粒子之非導電性接著薄膜300對IC晶片200進行安裝，對IC晶片之間距密集化有效。亦即，安裝裝置中，也可使用例如異方性導電接著薄膜(Anisotropic Conductive Film；ACF)或異方性導電接著膏(Anisotropic Conductive Paste；ACP)等在結著樹脂中散布細微之導電性粒子之接著劑。然而，使用這種接著劑之場合，IC晶片無法進而間距密集化，由導電性粒子之大小而在凸塊間區域殘留有導電性粒子，因此而有發生短路之憂。對此，在安裝裝置中，使用不含導電性粒子之接著劑，可防止短路不良品之問題，可更加提升接續信賴性。
又，本發明並不限於上述實施例。例如，上述實施例中，只對熱壓著單一IC晶片進行說明，然而，本發明也可適用於同時熱壓著複數IC晶片之場合。
例如做為同時熱壓著兩個IC晶片之安裝裝置，可如第3圖所示而構成。亦即，該安裝裝置中，壓著面14a之面積，係形成較配置有厚度在200μm以下之兩個IC晶片200、201之面積大而構成。該場合中，安裝裝置係使用橡膠硬度60以下做為構成壓著部14之彈性體，並使用最低熔體黏度在1.0×103 Pa‧s以下做為非導電性接著薄膜300之接著劑，對IC晶片200、201以及配線基板100加熱。
如此，該安裝裝置中，在複數IC晶片200、201之厚度不同之場合，也有高信賴性，可同時安裝IC晶片200、201，可大幅提升安裝效率。
又，上述實施例中，係說明使用非導電性接著薄膜安裝IC晶片之場合，然而本發明也可適用於使用非導電性接著膏(Non-Conductive Paste；NCP)等最低熔體黏度在1.0×103 Pa‧s以下不含導電性粒子之接著劑之場合。
又，上述實施例中，係說明安裝具有凸塊之IC晶片之場合，然而本發明也可適用於對不具有凸塊之IC晶片或其他電氣元件之安裝。
如此，本發明可在不脫離其旨趣之範圍內進行適當變更。
[實施例]
以下係適用本發明之安裝裝置之具體實施例，根據實驗結果進行說明。
本案發明人係使用包括基台與熱壓著頭之熱壓著裝置，對在基台上載置之既定之配線基板上安裝IC晶片，並在熱壓著後測定IC晶片之彎曲量。
熱壓著頭係準備包括橡膠硬度15、40、60、80四種高彈體之壓著部。又，接著劑係使用環氧系接著劑之Sony化學與資訊設備社製造之熱硬化型非導電性接著薄膜，其最低熔體黏度係準備1.0×103 Pa．s，1.2×104 Pa．s之兩種。又，使用如此之安裝裝置及非導電性接著薄膜，非導電性接著薄膜之溫度係進行溫度控制在180℃，進行與實機量產時相同之熱壓著，將100μm、200μm、400μm之厚度之IC晶片在配線基板上安裝。又，熱壓著之下壓的力量係對一個IC晶片為10kgf。
如此安裝之IC晶片，在熱壓著後測定彎曲量。使用最低熔體黏度為1.0×103 Pa．s之非導電性接著薄膜之場合之測定結果係如次表1以及第4圖所顯示。又，使用最低熔體黏度為1.2×104 Pa．s之非導電性接著薄膜之場合之測定結果係如次表2以及第5圖所顯示。
由此結果，在使用最低熔體黏度1.0×103 Pa‧s之非導電性接著薄膜之場合，相對於壓著部之橡膠硬度在60以下時，任何厚度之IC晶片，在熱壓著後彎曲量都未滿5μm，將厚度在200μm以下之IC晶片以橡膠硬度80之壓著部進行熱壓著，彎曲量極端變大。亦即，在使用最低熔體黏度1.0×103 Pa‧s之非導電性接著薄膜對厚度較薄之IC晶片熱壓著之場合，由壓著部之橡膠硬度在60以下，可避免不必要之非導電性接著劑之結著樹脂排除，以較小之壓力確實將IC晶片與配線基板之配線圖案接續。在此，壓著部之橡膠硬度為80之場合，IC晶片之彎曲量急遽增大，在將厚度在400μm之IC晶片以橡膠硬度為80之壓著部進行熱壓著之場合，也能證實熱壓著後產生之IC晶片之彎曲量變小。
如此，適用本發明之安裝裝置中，在IC晶片之厚度在200μm以下較薄之場合，由將壓著部之橡膠硬度與接著劑之最低熔體黏度最適化，可大幅降低熱壓著後產生之IC晶片彎曲量。如此之最適化，對朝向間距密集化之預期之IC晶片安裝極為有效。
綜上所述，雖然本發明已以一較佳實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
11．．．基台
12．．．熱壓著頭
13．．．加熱器
14．．．壓著部
14a．．．壓著面
15．．．壓著頭本體
15a．．．凹部
100．．．配線基板
100a．．．配線圖案
200．．．IC晶片
200a．．．凸塊
200b．．．頂面
300．．．非導電性接著薄膜
300a．．．結著樹脂
300b．．．圓角部
第1圖係本發明實施例所示之安裝裝置之結構之說明圖。
第2圖係使用本發明實施例所示之安裝裝置之熱壓著工程之說明圖。
第3圖係本發明實施例所示之安裝裝置之其他結構之說明圖。
第4圖係使用最低熔體黏度在1.0×103 Pa‧s之非導電性接著薄膜之場合中，對熱壓著後IC晶片之彎曲量測定結果之說明圖。
第5圖係使用最低熔體黏度在1.2×104 Pa‧S之非導電性接著薄膜之場合中，對熱壓著後IC晶片之彎曲量測定結果之說明圖。
11．．．基台
12．．．熱壓著頭
13．．．加熱器
100．．．配線基板
100a．．．配線圖案
200．．．IC晶片
14．．．壓著部
14a．．．壓著面
15．．．壓著頭本體
15a．．．凹部
200a．．．凸塊
200b．．．頂面
300．．．非導電性接著薄膜
300a．．．結著樹脂

Claims (14)

  1. 一種電氣元件之安裝方法，將一電氣元件在一配線基板上以熱壓著安裝，包括：在一基台上載置之該配線基板上載置最低熔體黏度在1.0×102 Pa．s以上且在1.0×103 Pa．s以下之一非導電性接著劑，並在該非導電性接著劑上載置厚度在200μm以下之該電氣元件之一第一工程；以及以具有橡膠硬度15以上、60以下之高彈體構成之一壓著部之一熱壓著頭對該電氣元件加壓之一第二工程。
  2. 如申請專利範圍第1項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在該電氣元件之頂面區域相對於該配線基板以既定之壓力加壓，並在該電氣元件之側面區域以相對於該頂面區域之壓力較小之壓力加壓。
  3. 如申請專利範圍第2項所述之電氣元件之安裝方法，其中該壓著部之壓著面面積係較該電氣元件之頂面面積大而構成，且厚度係至少為該電氣元件之厚度相同以上而構成。
  4. 如申請專利範圍第1項所述之電氣元件之安裝方法，其中該第二工程中，係在該電氣元件側以既定溫度加熱，並在該配線基板側以較該既定溫度高之溫度加熱。
  5. 如申請專利範圍第2項所述之電氣元件之安裝方法，其中該第二工程中，係在該電氣元件側以既定溫度加熱，並在該配線基板側以較該既定溫度高之溫度加熱。
  6. 如申請專利範圍第3項所述之電氣元件之安裝方 法，其中該第二工程中，係在該電氣元件側以既定溫度加熱，並在該配線基板側以較該既定溫度高之溫度加熱。
  7. 如申請專利範圍第1項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件加壓。
  8. 如申請專利範圍第2項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件加壓。
  9. 如申請專利範圍第3項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件加壓。
  10. 如申請專利範圍第4項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件加壓。
  11. 如申請專利範圍第5項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件加壓。
  12. 如申請專利範圍第6項所述之電氣元件之安裝方法，其中該第二工程中，係以該熱壓著頭在每一該電氣元件以5kgf以上15kgf以下之下壓的力量對該電氣元件 加壓。
  13. 如申請專利範圍第1至第12項中任何一項所述之電氣元件之安裝方法，其中該非導電性接著劑係非導電性接著薄膜。
  14. 一種電氣元件之安裝裝置，將一電氣元件在一配線基板上以熱壓著安裝，包括：一基台，載置該配線基板；以及一熱壓著頭，在該基台上載置之該配線基板上載置最低熔體黏度在1.0×102 Pa．s以上且在1.0×103 Pa．s以下之一非導電性接著劑，並在該非導電性接著劑上載置厚度在200μm以下之該電氣元件之狀態，對該電氣元件加壓，將該電氣元件在該配線基板上熱壓著；其中，該熱壓著頭係具有橡膠硬度15以上、60以下之高彈體構成之一壓著部。
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