CN1591776A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1591776A CN1591776A CNA2004100569860A CN200410056986A CN1591776A CN 1591776 A CN1591776 A CN 1591776A CN A2004100569860 A CNA2004100569860 A CN A2004100569860A CN 200410056986 A CN200410056986 A CN 200410056986A CN 1591776 A CN1591776 A CN 1591776A
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- light source
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 30
- 230000005855 radiation Effects 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000003776 cleavage reaction Methods 0.000 claims description 2
- 230000007017 scission Effects 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 25
- 238000000137 annealing Methods 0.000 abstract description 15
- 230000000052 comparative effect Effects 0.000 description 39
- 150000002500 ions Chemical class 0.000 description 38
- 230000035882 stress Effects 0.000 description 26
- 208000037656 Respiratory Sounds Diseases 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 230000008646 thermal stress Effects 0.000 description 11
- 230000004913 activation Effects 0.000 description 8
- 230000003954 pattern orientation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 206010011376 Crepitations Diseases 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003208809A JP2005072045A (ja) | 2003-08-26 | 2003-08-26 | 半導体装置およびその製造方法 |
JP208809/2003 | 2003-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1591776A true CN1591776A (zh) | 2005-03-09 |
CN100373533C CN100373533C (zh) | 2008-03-05 |
Family
ID=34263954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100569860A Expired - Lifetime CN100373533C (zh) | 2003-08-26 | 2004-08-24 | 半导体器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7045458B2 (zh) |
JP (1) | JP2005072045A (zh) |
KR (1) | KR100616379B1 (zh) |
CN (1) | CN100373533C (zh) |
DE (1) | DE102004041346B4 (zh) |
TW (1) | TWI251880B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163551A (zh) * | 2010-02-12 | 2011-08-24 | 富士电机控股株式会社 | 反向阻断型绝缘栅双极晶体管制造方法 |
CN102024681B (zh) * | 2009-09-11 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的方法 |
CN105140153A (zh) * | 2014-05-29 | 2015-12-09 | Ap***股份有限公司 | 加热器区块及利用所述加热器区块的基板热处理装置 |
CN109417096A (zh) * | 2016-07-19 | 2019-03-01 | 国立研究开发法人产业技术综合研究所 | 半导体装置及其制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
US20060258128A1 (en) * | 2005-03-09 | 2006-11-16 | Peter Nunan | Methods and apparatus for enabling multiple process steps on a single substrate |
JP2009188209A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | 不純物活性化熱処理方法及び熱処理装置 |
JP2011040544A (ja) * | 2009-08-10 | 2011-02-24 | Toshiba Corp | 熱処理装置及び半導体装置の製造方法 |
KR101829676B1 (ko) * | 2011-12-29 | 2018-02-20 | 삼성전자주식회사 | 웨이퍼 열 처리 방법 |
JP6839940B2 (ja) | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
JP6841666B2 (ja) * | 2017-01-13 | 2021-03-10 | 株式会社Screenホールディングス | 結晶構造制御方法および熱処理方法 |
JP6838992B2 (ja) * | 2017-02-21 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP2020136307A (ja) * | 2019-02-13 | 2020-08-31 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
JPH02205034A (ja) * | 1989-02-03 | 1990-08-14 | Hitachi Ltd | シリコン半導体素子およびその製造方法 |
JP3025408B2 (ja) * | 1994-06-20 | 2000-03-27 | シャープ株式会社 | 半導体素子の製造方法 |
JPH08288280A (ja) * | 1995-04-20 | 1996-11-01 | Mitsubishi Materials Corp | トランジスタ構造 |
JPH1187729A (ja) | 1997-09-12 | 1999-03-30 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US6528397B1 (en) * | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
TWI313059B (zh) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
JP2002198322A (ja) * | 2000-12-27 | 2002-07-12 | Ushio Inc | 熱処理方法及びその装置 |
JP2003197631A (ja) * | 2001-12-25 | 2003-07-11 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器 |
US20030124821A1 (en) * | 2001-12-28 | 2003-07-03 | Robertson Lance Stanford | Versatile system for forming shallow semiconductor device features |
US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
-
2003
- 2003-08-26 JP JP2003208809A patent/JP2005072045A/ja active Pending
-
2004
- 2004-08-19 TW TW093125007A patent/TWI251880B/zh active
- 2004-08-24 CN CNB2004100569860A patent/CN100373533C/zh not_active Expired - Lifetime
- 2004-08-24 KR KR1020040066623A patent/KR100616379B1/ko active IP Right Grant
- 2004-08-25 US US10/924,909 patent/US7045458B2/en not_active Expired - Lifetime
- 2004-08-26 DE DE102004041346.0A patent/DE102004041346B4/de not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024681B (zh) * | 2009-09-11 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的方法 |
CN102163551A (zh) * | 2010-02-12 | 2011-08-24 | 富士电机控股株式会社 | 反向阻断型绝缘栅双极晶体管制造方法 |
US8809130B2 (en) | 2010-02-12 | 2014-08-19 | Fuji Electric Co., Ltd. | Reverse block-type insulated gate bipolar transistor manufacturing method |
CN102163551B (zh) * | 2010-02-12 | 2016-01-13 | 富士电机株式会杜 | 反向阻断型绝缘栅双极晶体管制造方法 |
CN105140153A (zh) * | 2014-05-29 | 2015-12-09 | Ap***股份有限公司 | 加热器区块及利用所述加热器区块的基板热处理装置 |
CN109417096A (zh) * | 2016-07-19 | 2019-03-01 | 国立研究开发法人产业技术综合研究所 | 半导体装置及其制造方法 |
CN109417096B (zh) * | 2016-07-19 | 2022-02-18 | 国立研究开发法人产业技术综合研究所 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100373533C (zh) | 2008-03-05 |
KR20050022353A (ko) | 2005-03-07 |
DE102004041346B4 (de) | 2014-05-22 |
DE102004041346A1 (de) | 2005-04-07 |
US20050062107A1 (en) | 2005-03-24 |
JP2005072045A (ja) | 2005-03-17 |
TWI251880B (en) | 2006-03-21 |
US7045458B2 (en) | 2006-05-16 |
KR100616379B1 (ko) | 2006-08-28 |
TW200518230A (en) | 2005-06-01 |
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Effective date of registration: 20170807 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20211014 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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