CN1444775A - 具有至少一只发光二极管作为光源的照明单元 - Google Patents
具有至少一只发光二极管作为光源的照明单元 Download PDFInfo
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- CN1444775A CN1444775A CN01813552A CN01813552A CN1444775A CN 1444775 A CN1444775 A CN 1444775A CN 01813552 A CN01813552 A CN 01813552A CN 01813552 A CN01813552 A CN 01813552A CN 1444775 A CN1444775 A CN 1444775A
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Abstract
基于亮度转换LED的照明单元,发射的主辐射处于光谱370~430nm的范围内(峰值波长),其中该辐射借助在红、绿、蓝光内发射的三种荧光物质转换为具有更长波长的辐射。
Description
技术领域
本发明涉及权利要求1的前序部分所述的具有至少一只LED作为光源的照明装置。尤其是涉及基于主要发射近紫外或短波蓝光的LED的、发射可见光或白光的亮度变换LED。
背景技术
发射白光的LED眼下主要通过发射约460nm蓝光的Ga(In)N-LED和发射黄光的YAG∶Ce3+荧光物质产生(US5 998 925和EP 862794)。然而,由于基于有缺陷的色彩成分(首先是红色成分)而造成其不良的显色性,该白光LED只限制用于普通照明的目的。尝试以主要发射蓝光的LED与多种荧光物质组合来改善显色性以取代之,请参阅WO 00/33389和WO 00/33390。
此外,原则上是众知的,发白光的LED也用所谓的有机LED实现,或通过单色LED与相应的色彩混合来联合地实现。至多应用一个UVLED(发射最大值在300~370nm),该UV LED借助多个荧光物质,至多3个,在红,绿,蓝光谱段内发射的(RGB-混合)转变为白光(WO98 39 805,WO 98 39 807和WO 97 48 138)。众知作为蓝成分的无机荧光物质BaMgAl10O17∶Eu2+或ZnS∶Ag+,作为蓝绿成分如ZnS∶Cu+或(Zn,Cd)S∶Cu+,或ZnS∶(Al,Cu)+;作为红成分如Y2O2S∶Eu2+。此外,推荐一系列有机荧光物质。
荧光灯或白炽灯很少适用于具有较小尺寸的较高品质发白光的光源或譬如LCD的背景照明。而OLED更好地适用于它,但与无机荧光物质比较,有机荧光物质的UV-稳定性差。此外,造价较高。带有荧光物质YAG∶Ce3+(及其衍生的石榴石),蓝光LED原则上也适合于它,然而其缺点在于色品位置设置:只以较有限的方式这样选择色品位置,使得出现良好显色性的白光,因为白光色感主要通过LED的蓝光发射和荧光物质的黄光发射的混合产生。荧光灯和UV-(O)LED的缺点在于:UV能量以不佳的能效转变为可见光:(在荧光灯254和365nm,在UV LED300-370nm)波长例如254nm的UV辐射转变为具有波长450-650nm的光。这意味着,在理论上的100%量子效率情况下,能量耗损为40到60%。
通常有机荧光物质比无机荧光物质更难制造,此外,为了能在长寿命(例如超过30000小时)的光源内使用,通常是不稳定的。
本现有技术在由LED和荧光物质组合的能效和/或荧光物质的稳定性方面具有一些显著缺点,和/或几何尺寸方面的限制。
发明内容
本发明的任务在于提供根据权利要求1的前序部分所述的具有至少一只LED作为光源的照明单元,其特征在于高效性。
本任务通过权利要求1的特征部分的特征来解决。特别有利的扩展在从属权利要求中给出。
本发明与研制发射可见光或白光的LED相结合是尤为有利的。该LED可以通过在近UV或极短波的蓝光(这里总称为“短波的”)中进行发射的具有发射波长在370和430nm之间的LED与至少一种在下面所引用的荧光物质组合起来以进行制造,该荧光物质完全地或局部地吸收LED的辐射,并且其自身在以下光谱段内发射,该光谱段与LED光和/或其它色素的附加混合会给出具有良好显色性的白光,或具有所希望的色品位置的光。按照应用,具有本发明特性的仅仅一种荧光物质已够用。它也可能与一种或多种其它的本发明的荧光物质或其它类的荧光物质,例如YAG∶Ce组合。与利用长波蓝光(430到480nm)的现有技术相反,这里LED的蓝光不能(或几乎不能)直接利用,而只适合于荧光物质的初级激励。
其发射大多接近于荧光物质所发射的波长的主辐射源可以显著地提高能效。在400nm发射的源的情况下,能耗减少例如已经到达12~39%。
技术上的问题在于:发展和生产在370nm和430nm的光谱段可调整的,而且同时显示合适发射性能的足够有效的荧光物质。
为了实现彩色或白光LED,本发明的荧光物质可能与具有尽可能透明的粘结剂的一种或多种其它荧光物质组合(EP862 794)。荧光物质完全或局部吸收发射UV/蓝光的LED的光,并在另一光谱段再宽带地发射,所以以所希望的色品位置产生总发射。迄今为止,几乎还没有象这里所述的荧光物质那样好地满足这些要求的荧光物质。它表现出高量子效率(典型地为70%),同时表现出根据眼睛的灵敏度被认为是明亮的光谱发射。色品位置可以在宽波段内调整。此外,它们的相当容易的、保护环境的可制造性,它们的无毒性和相当高的化学稳定性属于这些荧光物质的优点。
本发明尤其涉及具有至少一只LED作为产生特定的所希望色调(例如绛红色)或例如白光的光源(发光二极管)的照明单元,它是通过借助于多种荧光物质把主要发射短波(即在光波段370到430nm的UV到蓝色)的辐射转换为白光:或者通过发射蓝或黄光的荧光物质的次级辐射的混合,或者尤其是通过发射红、绿、蓝光的三种荧光物质构成的RGB混合。对于显色性特别高的要求,也可以组合多于3种荧光物质。为此目的,也可以用本发明使用的荧光物质与其它的为此应用已经众知的荧光物质相组合,例如SrS∶Eu(WO 00/33390)或YAG∶Ce(US5 998 925)。
Ga(In,Al)N-LED尤其适合于主要发射短波的LED,但是为了产生具有光波段为370到430nm的主发射的短波LED,也可以采取任何其它的途径。
以超出眼下知识水平的方式,本发明利用了其它的荧光物质及其混合物(看表1到表3),由此扩展了LED的光谱发射特性。这时可以如此选择使用的荧光物质及其混合,使得除了不褪色的白光外,也产生具有宽带发射的其它混色。通常,LED的发射的光被包含荧光物质的混合物所吸收。该混合物或直接沉积在LED上,或者分散在树脂或硅中,或沉积到LED之上的透明玻璃片上,或者沉积到多个LED之上的透明玻璃片上。
本发明的步骤在于:通过利用具有发射波长在370和430nm之间的LED(不可见或几乎不可见的深蓝)和利用列在下面列出的荧光物质来改善LED发射的光谱匹配和调整任意的色标,确切地说,具有比传统的LED更高的能效。
可激发相对长波的无机发光材料,眼下几乎不为人知。然而,令人吃惊地表明,有一些无机发光材料还适合于利用峰值发射波长370-430nm的辐射被有效地激发。典型的发射半值宽度处于20nm~50nm。荧光物质的吸收可以通过选择的结构参量和化学成分加以控制。这样的荧光物质都具有相对小的禁带宽(典型值约3ev),或者它们对于那些吸收由LED发射的约400nmUV/蓝光的离子具有强的晶体场。
与所选择的LED(370~430nm)发光波长有关地,并且与所希望的显色性和/或所希望的色品位置有关地,可以在荧光物质混合中选择荧光物质的一定组合。因此,最合适的荧光物质混合是与所希望的目标(显色性,色品位置,色温)和当前的LED发射波长有关。
满足上述条件的每种荧光物质,原则上适合于应用。有效发射,并且在370~430nm范围内可有效激发或至少局部可激发的荧光物质列举在下表内。表1描绘了具有峰值发射波长从440到485nm的合适的蓝荧光物质,表2描述了具有峰值发射波长从505到550nm的合适的绿荧光物质,表3描绘了具有峰值发射波长从560到670nm的合适的红荧光物质。因此,首次制造基于激发多种荧光物质的发射短波的二极管的、具有较高效率的LED是可能的。
表1:发射蓝光的荧光物质
M3(PO4)4(X)∶Eu2+,其中m至少是单独的金属Ba,Ca之一或与Sr组合(优选Sr分额最高达85%),其中X至少是卤素F或Cl之一;
M*3MgSi2O8∶Eu2+,其中m至少是单独的金属Ba,Ca,Sr之一或组合,
Ba5SiO4Br6∶Eu2+
Ba1.29Al12O19.29∶Eu2+
YSiO2N∶Ce3+,(Sr,Ba)2Al6O11∶Eu2+
MF2∶Eu2+,其中M至少是金属Ba,Sr,Ca之一;优先Ba在金属M中的份额>5%,例如Ba=10%,即M=Ba0.10Sr0.45Ca0.45,
Ba0.57Eu0.09O0.34Al11.11O17∶Eu2+;
M**MgAl10O17∶Eu2+,其中M**至少是单独的金属Eu,Sr之一,或与Ba组合(优选Ba份额最高75%);
MLn2S4∶Ce3+,其M是金属Ca,Sr的组合,而Ln至少是金属La,Y,Gd之一。
表2:发射绿光(和青绿光)的荧光物质
SrAl2O4∶Eu2+;
MBO3∶(Ce3+,Tb3+);其中M至少是单独的金属Se,Gd,Lu之一,或与Y(尤其Y份额<40%)的组合;金属Ce和Tb一起作为激活剂起作用;尤其是Ce在金属M中的份额处于5%≤Ce≤20%的范围内,Tb在该金属中的份额处于4%≤Tb≤20;优选Ce份额>Tb份额;
M2SiO5∶(Ce3+,Tb3+):其中M至少是金属Y,Gd,Lu之一,金属Ce和Tb一起作为激活剂(优选Ce的份额>Tb的份额),
MN*2S4∶Ak:其中M至少是金属Zn,Mg,Ca,Sr,Ba之一;其中N至少是金属Al,Ga,In之一;Ak或与Eu2+,Mn2组合一起(优选Eu份额>Mn份额),或与Ce3+,Tb3+组合一起(优选Ce份额>Tb份额);
SrBaSiO4∶E2+
Ba0.82Al12O18.82∶Eu2+
Ba0.82Al12O18.82∶Eu2+,Mn2+
Y5(SiO4)3N∶Ce3+;
Ca8Mg(SiO4)4C12∶Ak2+其中Ak为单独的Eu2+或与Mn2组合一起(优选Eu份额>2×Mn份额);
Sr4Al14O25∶Eu2+;
(Ba,Sr)MgAl10O17∶Ak,其中Ak是Eu2+或与Ce3+和Tb3+组合一起,或与Mn2+组合一起,优选在激活剂Ak内的Eu份额>50%;
Sr6BP5O20∶Eu2+
Sr2P2O7∶(Eu2+,Tb3+)与Eu和Tb组合一起
BaSi2O5∶Eu2+;
表3:发射红光(橙红到深红)的荧光物质
Ln2O2St∶Ak3+,其中,Ln至少是单独的金属Gd,La,Lu之一或与Y组合(优选Y份额最高为40%;尤其是La份额最少为10%),St至少是元素S,Se,Te之一;Ak是单独的Eu或与Bi组合;
Ln2WmO6;Ak3+,其中,Ln至少是金属Y,Gd,La,Lu之一,Wm至少是元素W,Mo,Te之一,Ak是单独的Eu或与Bi组合;
(Zn,Cd)S∶Ag+,其中Zn和Cd只被组合地使用,优选Zn份额<Cd份额;
Mg28Ge7.5O38F10∶Mn4+
Sr2P2O7∶Eu2+,Mn2+
M3MgSi2O8∶Eu2+,Mn2+,其中,M至少是金属Ca,Ba,Sr之一。
(M1)2(M2)(BO3)2∶Eu2+,其中M1至少是金属Ba,Sr之一,M2至少是金属Mg,Ca之一,优选在金属正离子M1中的Ba份额为80%,优选在金属M2中的Mg份额至少为70%。
必须注意,通常激活剂总是取代一部分占首位的正离子(=金属,尤其是镧),例如MS∶Eu(5%)代表M1-0.05Eu0.05S。
式子“M是至少金属X,Y之一”意味着或单独的金属X或单独的金属Y,或者是两种金属的组合,即M=XaYb,其中a+b=1。
在白光LED的情况下使用类似于在本文开始的现有技术中所述的结构。作为UV二极管(主辐射源)优选用GaInN或GaN或GaInAlN。例如,它具有400nm峰值波长,20nm的半值宽度。该二极管衬底直接或间接淀积有由三种荧光物质组成的悬浮体,每种荧光物质具有在红、绿和蓝光谱段的发射最大值。从这些荧光物质中至少从表1到3选择一种,并且或与公知的荧光物质组合,或与另外的表中的荧光物质组合。该荧光物质混合体在约200℃的温度下烘烤。因此达到典型为80的显色性。
附图说明
本发明依靠多个实施例详细说明如下。其附图有:
图1示出用作白光光源(LED)的半导体结构元件;
图2示出根据本发明的具有荧光物质的照明单元;
图3到图17示出根据本发明的、具有各种荧光物质的LED的发射谱。
具体实施方式
为了在白光LED内与GaInN芯片一起投入使用,例如使用与US 5998 925所述类似的结构。用于白光的这类光源的结构在图1一目了然地示出。该光源是具有第1和第2电引线2、3的峰值发射波长为420nm和半值宽度为25nm的InGaN型半导体结构元件(芯片1),放入在不透光的主外壳8的空隙9内。引线之一3是经压焊丝14与芯片1连接。空隙具有用作芯片蓝光主辐射的反射器的壁17。该空隙9充填填料5,该填料作为主要成分包含环氧热塑合成树脂(80到90重量%)和荧光物质色素6(少于15重量%)。其它微量成分尚有甲醚和硅胶。荧光物质色素是混合物。第1转化荧光物质从表1选择。第2荧光物质从表2,第3荧光物质从表3分别选择。
在图2示出了平面灯20作为照明单元的一截面。它由其上粘合一只四方形外壳22的一个共同的支架21构成。它的上侧配有一个共同的盖板23。该四方形外壳具有一个空隙,其内安置单个半导体结构元件24。它们是具有峰值发射380nm的发射UV的发光二极管。借助于直接在单个LED的热塑合成树脂内(类似于图1所描述的)的变换层或安装在UV辐射可达到的所有平面上的层25来实现变换为白光。外壳侧壁、盖板和底部的内表面属于此。在利用从表1~3的本发明荧光物质中至少一种的条件下,变换层25由在黄、绿、蓝色光谱段发射的三种荧光物质构成。
组合所考察的荧光物质的一些具体实施例汇集在表4内。它涉及在所有三种光谱段内合适的、本发明的和众知的荧光物质的汇集。在第1列给出考察的序号。在第2列中给出荧光物质的化学式,在第3列给出荧光物质的发射最大值,在第4和第5列给出X和Y色标。在第6和第7列给出反射系数和量子效率(都用%表示)。
尤其优选ZnS荧光物质用于LED。它在LED环境内示出良好的加工性能。首先表4涉及发蓝光的荧光物质ZnS∶Ag,发绿光的荧光物质ZnS∶Cu,Al和发红光的荧光物质ZnS∶Cu,Mn。必须强调,在通过用370到410nm光波段的主辐射LED激励的情况下,用这三种荧光物质可以制造发白光的荧光物质混合体,参阅图6的实施例6。因为这3种荧光物质化学上几乎是相同的材料,所以它们可以极好地在热塑合成树脂内或其它树脂内或在灌浆状态加工成荧光物质混合体。
表4化学式号 Em x y R(%) Q.E(%)1 Ba3MgSi2O8∶Eu(5%) 440 0,16 0,07 42 502 (Ba0,15Sr0,85)5(PO4)3Cl∶Eu2+ 448 0,15 0,05 46 763 ZnS∶Ag 452 0,14 0,07 76 634 (Ba,Sr)MgAl10O17∶Eu2+ 454 0,15 0,08 49 835 SrMgAl10O17∶Eu2+ 467 0,15 0,19 63 926 EuMgAl10O17 481 0,17 0,31 35 637 ZnS∶Cu 506 0,19 0,43 22 488 Ba0.74Eu0.08Al12O18.82 507 0,22 0,43 52 879 Ca8Mg(SiO4)4Cl2∶Eu2+ 508 0,17 0,6 34 6710 ZnS∶Cu 510 0,2 0,46 16 5511 BaMgAl10O17∶Eu2+,Mn2+ 513 0,14 0,21 64 9512 Ba0.72Eu0.05Mn0.05Al12O18.82 514 0,21 0,48 71 9713 BaMgAl10O17∶Eu2+,Mn2+ 515 0,14 0,65 39 8814 (Sr,Ba)SiO4∶Eu2+ 517 0,23 0,61 5415 SrAl2O4∶Eu2+ 523 0,29 0,58 28 7716 ZnS∶Cu,Al 534 0,31 0,61 29 8317 YBO3∶(Ce3+,Tb3+)(9.5%/5%) 545 0,34 0,59 80 6918 Ca8Mg(SiO4)4Cl2∶Eu2+,Mn2+ 550 0,38 0,57 30 6119 Sr1.95Ba0.03Eu0.02SiO4 563 0,44 0,53 2120 Sr2P2O7∶Eu2+,Mn2+ 570 0,32 0,27 63 4621 ZnS∶Cu,Mn 585 0,49 0,45 19 4422 Gd2MoO6∶Eu3+(20%) 610 0,66 0,34 5023 Y2W0.98Mo0.02O6∶Eu3+ 612 0,61 0,38 68 7324 Y2WO6∶Eu3+,Bi3+(7.5%,0.5%) 612 0,64 0,36 5225 Lu2WO6∶Eu3+,Bi3+(7.5%,1%) 612 0,64 0,36 6526 SrS∶Eu2+(2%) 616 0,63 0,37 52 9127 La2TeO6∶Eu3+(%) 617 0,66 0,34 7628 (La,Y)2O2S∶Eu3+(..) 626 0,67 0,33 84 7329 Sr2Si5N8∶Eu2+(10%) 636 0,64 0,36 12 7030 (Ba,Ca,Sr)MgSi2O8∶Eu,Mn 657 0,39 0,16 47 52
第14号荧光物质(Sr,Ba)SiO4∶Eu2+在绿光里如此宽带,以致在这里不需要单独的红光成分。
最后,在表6示出表4的荧光物质与具有发射峰值在光波段370到420nm的一个主光源(UV-LED)相结合的具体15个实施例。个别的UV二极管汇集在表5内,其中,给出了单个二极管的发射峰值和色品位置(就定义而论,从380nm起)。
为了更好地比较,在表6的列1到列4内再次***表4的数据。在列5到10记录了单个荧光物质在各种波长情况下激励的可用性,也就是说***地对于单个物质在具有发射峰值在370到420nm、间隔为10nm的短波二极管情况下的可用性。随后第15列示出了RGB混合的具体例子(称为Ex1到Ex15),就是说,短波LED(第2列给出选择的峰值发射)与由红、绿、蓝光谱段组成的荧光物质的组合。在各列内给出的数字表示光谱发射的相对份额。
在380nm以下的强短波UV二极管情况下,也由于通过三种荧光物质的强烈吸收,UV二极管几乎不提供次级发射的任何份额。然而从380nm的主发射开始,除蓝荧光物质外,二极管对蓝荧光物质还提供微小的、随着波长上升而上升的额外的蓝光份额。这个份额在表5内作为附加的第4份额出现。
最后,在表6的最后2行记录了整个***的、复盖了比色图表中较宽白色调波段的所测得的色标。该***的光谱分布在图3(相应于EX1)到图7(相应于EX15)内描绘。
对发蓝光的第2,4和6号荧光物质;发绿光的第8,9,10,13,15,16,17,18号荧光物质以及发红光的荧光物质26,28和28,已经证明在370到420nm的主辐射的情况下,它们特别合适作为三色混合中应用的荧光物质。
第15号实施例利用了具有420nm峰值发射的、具有如此高强度的发蓝光二极管,以致它可以完全取代蓝荧光物质,并且只需要2个附加的绿和红光荧光物质。
Claims (19)
1.具有至少一只LED作为光源的照明单元,其中,LED发射光谱段的370到430nm段的主辐射(峰值波长),其中,该辐射局部地或完全地通过三种受到LED主辐射的荧光物质转换为长波辐射,并在蓝、绿和红光谱段内发射,以致产生白光,其特征为,至少借助于发射具有波长最大值在440到485nm的蓝光的荧光物质,借助于发射具有波长最大值在505到550nm的绿光的荧光物质,和借助于发射具有波长最大值在560到670nm的红光的荧光物质实现所述的转换,其中三种荧光物质中至少一种来自表1,2或3之一。
2.根据权利要求1所述的照明单元,其特征为,在应用分别来自所述三个表中的三种荧光物质的情况下,LED发射白光辐射。
3.根据权利要求1所述的照明单元,其特征为,应用基于Ga(In,Al)N的LED作为主辐射源。
4.根据权利要求1所述的照明单元,其特征为,在应用如下蓝荧光物质的情况下产生白光:M5(PO4)3(X)∶Eu2+,其中,M至少是单独的金属Ba,Ca之一或与St组合,其中X是至少卤素F或Cl之一;或一种发蓝光的荧光物质,
M*3MgSi2O8∶Eu2+,其中,M至少是单独的金属Ba,Cu,Sr之一或组合;或一种蓝光荧光物质;ZnS∶Ag或
M**MgAl10O17∶Eu2+,其中,M**至少是单独的金属Eu,Sr之一或与Ba的组合。
5.根据权利要求1所述的照明单元,其特征为,在应用如下一种绿荧光物质情况下产生白光:SrAl2O4∶Eu2+
或一种绿荧光物质:Ba0.82Al12O18.82∶Eu2+,Mn2+
或一种绿荧光物质:Ca8Mg(SiO4)4Cl2∶Eu2+,Mn2+
或一种绿荧光物质:Sr4Al14O25∶Eu
或一种绿荧光物质:ZnS∶Cu,Al,或
BaMgAl10O17∶(Eu2+与Ce3+,Tb3+组合,或与Mn2+组合)。
6.根据权利要求1所述的照明单元,其特征为,在应用如下一种红荧光物质情况下产生白光:
Ln2O2SSt∶Ak3+,其中,Ln至少是单独的金属Gd,La,Lu之一或与Y组合;其中St至少是元素Se,Te之一;其中Ak为单独的Eu或与Bi组合;
或一种红荧光物质,ZnS∶Cu,Mn或
Sr2P2O7∶Ak2+,其中Ak至少为金属Eu,Mn之一。
7.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围370到420nm,应用了蓝荧光物质M5(PO4)3(X)∶Eu2+,其中M至少为单独的金属Ba,Ca之一或与Sr组合,其中X为至少卤素F或Cl之一;或一种荧光物质;
M**MgAl10O17∶Eu2+,其中M**为至少单独的金属Eu,Sr之一或与Ba组合。
8.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长在380nm以下,应用了如下一种蓝荧光物质:M*3MgSi2O8∶Eu2+,其中M至少是单独的金属Ba,Ca,Sr之一或与其组合。
9.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在370到420nm之间,在应用如下一种绿荧光物质:SrAl2O4∶Eu2+
或一种绿荧光物质,Ca8Mg(SiO4)4Cl2∶Eu2+,Mn2+;
或一种绿荧光物质,Sr4Al14O25∶Eu;
或一种绿荧光物质,BaMgAl10O17∶(Eu2+,与Ce3+,Tb3+组合,或与Mn3+组合)。
10.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在380nm之下,应用了如下一种绿荧光物质Ba0.82Al12O18.82∶(Eu2+,Mn2+)。
11.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在380nm之下,应用了如下一种红荧光物质Ln2O2St∶Ak3+,其中Ln至少是单独的金属Gd,La,Lu之一或与Y组合,其中St至少是元素S,Se,Te之一;其中Ak是单独的Eu或与Bi组合;
或一种红荧光物质,Sr2P2O7 ∶Ak 2+,其中Ak至少是金属Eu,Mn之一。
12.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在370到400nm,应用了如下一种红荧光物质:MMgSi2O8∶Eu,Mn,其中M至少是金属Ba,Ca,Sr之一。
13.根据权利要求1所述的照明单元,其特征为,照明单元是亮度转换LED,其中,荧光物质与芯片直接或间接接触。
14.根据权利要求1所述的照明单元,其特征为,发光单元是LED场(阵列)。
15.根据权利要求9所述的照明单元,其特征为,至少一种荧光物质安置在LED场前安置的光学装置上。
16.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用蓝荧光物质ZnS∶Ag的情况下,主发射的辐射处于波长范围370到410nm。
17.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用绿荧光物质ZnS∶Cu,Al情况下,其中Cu和Al一起应用,主发射的辐射处于波长范围370到410nm。
18.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用红荧光物质ZnS∶Cu,Mn,其中Cu和Mn一起应用,主发射的辐射处于波长范围370到410nm。
19.根据权利要求1所述的照明单元,其特征为,为了产生白光,在共同使用权利要求16,17和18所述的蓝、绿和红荧光物质的情况下,主发射的辐射处于波长范围370到410nm。
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2001
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- 2001-07-27 CN CNB018135528A patent/CN1214471C/zh not_active Expired - Lifetime
- 2001-07-27 KR KR1020037000852A patent/KR100920533B1/ko active IP Right Grant
- 2001-07-27 JP JP2002516838A patent/JP5419315B2/ja not_active Expired - Lifetime
- 2001-07-27 WO PCT/DE2001/002849 patent/WO2002011214A1/de active Application Filing
- 2001-07-27 EP EP01956394A patent/EP1305833A1/de not_active Ceased
- 2001-07-27 EP EP08158704.0A patent/EP1970970B1/de not_active Expired - Lifetime
- 2001-07-27 US US10/311,722 patent/US7064480B2/en not_active Expired - Lifetime
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2005
- 2005-10-27 US US11/259,776 patent/US7239082B2/en not_active Expired - Lifetime
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2007
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2012
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CN105062479A (zh) * | 2015-08-15 | 2015-11-18 | 中国地质大学(北京) | 一种黄橙光型钙硅石结构的氮氧化物荧光材料及其制备方法 |
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CN108799849A (zh) * | 2017-05-02 | 2018-11-13 | 三星电子株式会社 | 白光发光器件 |
CN108799849B (zh) * | 2017-05-02 | 2021-10-29 | 三星电子株式会社 | 白光发光器件 |
CN111081851A (zh) * | 2018-03-27 | 2020-04-28 | 首尔半导体株式会社 | 发光装置 |
CN110579904A (zh) * | 2018-06-11 | 2019-12-17 | 三星显示有限公司 | 背光组件、显示设备以及光学构件 |
CN113531411A (zh) * | 2020-04-21 | 2021-10-22 | 厦门立达信照明有限公司 | 一种光源结构和灯具 |
CN113531411B (zh) * | 2020-04-21 | 2023-10-10 | 厦门立达信数字教育科技有限公司 | 一种光源结构和灯具 |
Also Published As
Publication number | Publication date |
---|---|
US20040056256A1 (en) | 2004-03-25 |
US7239082B2 (en) | 2007-07-03 |
KR100920533B1 (ko) | 2009-10-08 |
KR20030017644A (ko) | 2003-03-03 |
JP5419315B2 (ja) | 2014-02-19 |
JP2004505470A (ja) | 2004-02-19 |
DE10036940A1 (de) | 2002-02-07 |
US7064480B2 (en) | 2006-06-20 |
TW531904B (en) | 2003-05-11 |
WO2002011214A1 (de) | 2002-02-07 |
EP1970970B1 (de) | 2016-12-07 |
CN1214471C (zh) | 2005-08-10 |
US20070170842A1 (en) | 2007-07-26 |
JP2012235140A (ja) | 2012-11-29 |
EP1970970A2 (de) | 2008-09-17 |
US20060055315A1 (en) | 2006-03-16 |
EP1305833A1 (de) | 2003-05-02 |
EP1970970A3 (de) | 2008-10-01 |
US7821196B2 (en) | 2010-10-26 |
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