CN1269137C - 半导体存储器件 - Google Patents
半导体存储器件 Download PDFInfo
- Publication number
- CN1269137C CN1269137C CNB021246009A CN02124600A CN1269137C CN 1269137 C CN1269137 C CN 1269137C CN B021246009 A CNB021246009 A CN B021246009A CN 02124600 A CN02124600 A CN 02124600A CN 1269137 C CN1269137 C CN 1269137C
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- CN
- China
- Prior art keywords
- busy
- mentioned
- circuit
- signal
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000009471 action Effects 0.000 claims description 65
- 238000003860 storage Methods 0.000 claims description 56
- 238000005538 encapsulation Methods 0.000 claims description 28
- 230000008676 import Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 description 46
- 238000005755 formation reaction Methods 0.000 description 46
- 238000010586 diagram Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 32
- 230000005540 biological transmission Effects 0.000 description 19
- 102000054766 genetic haplotypes Human genes 0.000 description 15
- 101150005267 Add1 gene Proteins 0.000 description 8
- 230000000977 initiatory effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- LZIAMMQBHJIZAG-UHFFFAOYSA-N 2-[di(propan-2-yl)amino]ethyl carbamimidothioate Chemical compound CC(C)N(C(C)C)CCSC(N)=N LZIAMMQBHJIZAG-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005039 memory span Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001198132 | 2001-06-29 | ||
JP198132/2001 | 2001-06-29 | ||
JP2001377408 | 2001-12-11 | ||
JP377408/2001 | 2001-12-11 | ||
JP159518/2002 | 2002-05-31 | ||
JP2002159518 | 2002-05-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101268668A Division CN1805051B (zh) | 2001-06-29 | 2002-06-28 | 半导体存储器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1426068A CN1426068A (zh) | 2003-06-25 |
CN1269137C true CN1269137C (zh) | 2006-08-09 |
Family
ID=27347050
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021246009A Expired - Lifetime CN1269137C (zh) | 2001-06-29 | 2002-06-28 | 半导体存储器件 |
CN2005101268668A Expired - Lifetime CN1805051B (zh) | 2001-06-29 | 2002-06-28 | 半导体存储器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101268668A Expired - Lifetime CN1805051B (zh) | 2001-06-29 | 2002-06-28 | 半导体存储器件 |
Country Status (4)
Country | Link |
---|---|
US (12) | US6680858B2 (zh) |
KR (1) | KR100538728B1 (zh) |
CN (2) | CN1269137C (zh) |
TW (1) | TW561491B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7457897B1 (en) * | 2004-03-17 | 2008-11-25 | Suoer Talent Electronics, Inc. | PCI express-compatible controller and interface for flash memory |
TW561491B (en) * | 2001-06-29 | 2003-11-11 | Toshiba Corp | Semiconductor memory device |
KR100442091B1 (ko) * | 2002-07-09 | 2004-07-27 | 삼성전자주식회사 | 내장된 각 칩들의 성능을 충분히 동작시킬 수 있는 멀티 칩 |
JP3875621B2 (ja) | 2002-10-30 | 2007-01-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100499788B1 (ko) * | 2002-11-27 | 2005-07-07 | 인티그런트 테크놀로지즈(주) | 집적회로 칩 |
EP1542130B1 (fr) | 2003-12-12 | 2007-04-11 | STMicroelectronics S.A. | Mémoire série comprenant des moyens d'intégration dans un plan mémoire étendu |
FR2863765A1 (fr) * | 2003-12-12 | 2005-06-17 | St Microelectronics Sa | Procede de realisation d'un plan memoire etendu au moyen d'une pluralite de memoires serie |
JP2007179669A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | メモリシステム |
KR100843546B1 (ko) * | 2006-11-21 | 2008-07-04 | 삼성전자주식회사 | 멀티 칩 패키지 플래시 메모리 장치 및 그것의 상태 신호독출 방법 |
JP5070918B2 (ja) * | 2007-05-01 | 2012-11-14 | 富士通セミコンダクター株式会社 | アナログ信号選択回路 |
US8898400B2 (en) * | 2007-07-23 | 2014-11-25 | Infineon Technologies Ag | Integrated circuit including multiple memory devices |
FR2938670B1 (fr) * | 2008-11-17 | 2012-02-10 | Stmicroelectronics Crolles Sas | Dispositif de controle de l'activite de modules d'un reseau de modules de memoire |
US8144496B2 (en) * | 2009-06-30 | 2012-03-27 | Sandisk Technologies Inc. | Memory system with multi-level status signaling and method for operating the same |
US7863766B2 (en) * | 2009-06-30 | 2011-01-04 | Teco-Westinghouse Motor Company | Power converter for use with wind generator |
KR102138936B1 (ko) | 2013-11-11 | 2020-07-28 | 삼성전자주식회사 | 전력 공급 장치 및 그것을 이용한 전력 공급 방법 |
CN104737777A (zh) * | 2015-03-08 | 2015-07-01 | 邬方成 | 一种杏鲍菇栽培方法 |
CN104737776A (zh) * | 2015-03-08 | 2015-07-01 | 邬方成 | 一种杏鲍菇栽培方法 |
CN104737806A (zh) * | 2015-03-20 | 2015-07-01 | 邬方成 | 一种香菇栽培方法 |
KR102291639B1 (ko) * | 2015-07-13 | 2021-08-20 | 에스케이하이닉스 주식회사 | 레디 비지 신호를 출력하는 반도체 메모리 장치 및 그것을 포함하는 메모리 시스템 |
KR102554416B1 (ko) | 2016-08-16 | 2023-07-11 | 삼성전자주식회사 | 메모리 장치의 내부 상태 출력 장치 및 이를 적용하는 메모리 시스템 |
KR102379729B1 (ko) | 2017-10-27 | 2022-03-29 | 삼성전자주식회사 | 우선 순위에 따라 매칭 라인들을 구동하는 메모리 장치 |
KR102444234B1 (ko) | 2018-01-03 | 2022-09-16 | 삼성전자주식회사 | 메모리 카드 및 전자 시스템 |
CN111458621B (zh) * | 2019-01-21 | 2022-03-01 | 华邦电子股份有限公司 | 集成电路及其多芯片状态的检测方法 |
US10908211B2 (en) * | 2019-03-07 | 2021-02-02 | Winbond Electronics Corp. | Integrated circuit and detection method for multi-chip status thereof |
KR102678655B1 (ko) * | 2019-07-05 | 2024-06-27 | 에스케이하이닉스 주식회사 | 메모리 인터페이스, 이를 포함하는 데이터 저장 장치 및 그 동작 방법 |
CN111210855B (zh) | 2019-12-30 | 2020-09-15 | 深圳市芯天下技术有限公司 | 一种多晶元叠封存储器及其输出同步方法 |
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JPH0773685A (ja) * | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
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JP3450896B2 (ja) * | 1994-04-01 | 2003-09-29 | 三菱電機株式会社 | 不揮発性メモリ装置 |
JPH0863446A (ja) | 1994-08-26 | 1996-03-08 | Hitachi Ltd | フラッシュメモリ、およびそれと接続するプロセッサ |
JPH1069792A (ja) * | 1996-08-27 | 1998-03-10 | Denso Corp | 混成集積回路装置 |
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KR100799687B1 (ko) * | 2006-09-19 | 2008-02-01 | 삼성전자주식회사 | 비휘발성 메모리를 공유하는 두 개 이상의 콘트롤러를내장한 시스템 |
-
2002
- 2002-06-24 TW TW091113765A patent/TW561491B/zh not_active IP Right Cessation
- 2002-06-28 US US10/185,645 patent/US6680858B2/en not_active Expired - Lifetime
- 2002-06-28 CN CNB021246009A patent/CN1269137C/zh not_active Expired - Lifetime
- 2002-06-28 KR KR10-2002-0036894A patent/KR100538728B1/ko active IP Right Grant
- 2002-06-28 CN CN2005101268668A patent/CN1805051B/zh not_active Expired - Lifetime
-
2004
- 2004-01-08 US US10/754,993 patent/US6990003B2/en not_active Expired - Lifetime
- 2004-09-24 US US10/949,274 patent/US7542323B2/en not_active Expired - Lifetime
-
2007
- 2007-09-27 US US11/904,560 patent/US7751259B2/en not_active Expired - Lifetime
- 2007-09-27 US US11/904,565 patent/US7933134B2/en not_active Expired - Fee Related
- 2007-10-02 US US11/906,379 patent/US7596042B2/en not_active Expired - Lifetime
- 2007-10-05 US US11/973,073 patent/US7663967B2/en not_active Expired - Lifetime
- 2007-10-05 US US11/973,274 patent/US7522442B2/en not_active Expired - Lifetime
-
2009
- 2009-02-24 US US12/391,769 patent/US20090161403A1/en not_active Abandoned
-
2011
- 2011-03-25 US US13/071,729 patent/US8331124B2/en not_active Expired - Lifetime
-
2012
- 2012-11-23 US US13/684,407 patent/US8687400B2/en not_active Expired - Lifetime
-
2014
- 2014-02-04 US US14/172,477 patent/US9299436B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW561491B (en) | 2003-11-11 |
US8687400B2 (en) | 2014-04-01 |
US20080170437A1 (en) | 2008-07-17 |
US20080031056A1 (en) | 2008-02-07 |
US20080043541A1 (en) | 2008-02-21 |
US7542323B2 (en) | 2009-06-02 |
US7663967B2 (en) | 2010-02-16 |
US20080101137A1 (en) | 2008-05-01 |
US9299436B2 (en) | 2016-03-29 |
CN1805051B (zh) | 2013-01-09 |
US20090161403A1 (en) | 2009-06-25 |
US20140153336A1 (en) | 2014-06-05 |
US6680858B2 (en) | 2004-01-20 |
US7751259B2 (en) | 2010-07-06 |
US7933134B2 (en) | 2011-04-26 |
US7596042B2 (en) | 2009-09-29 |
KR20030011251A (ko) | 2003-02-07 |
US7522442B2 (en) | 2009-04-21 |
US8331124B2 (en) | 2012-12-11 |
US6990003B2 (en) | 2006-01-24 |
CN1805051A (zh) | 2006-07-19 |
US20130088922A1 (en) | 2013-04-11 |
US20030021139A1 (en) | 2003-01-30 |
KR100538728B1 (ko) | 2005-12-26 |
CN1426068A (zh) | 2003-06-25 |
US20050036356A1 (en) | 2005-02-17 |
US20040141350A1 (en) | 2004-07-22 |
US20080080269A1 (en) | 2008-04-03 |
US20110170355A1 (en) | 2011-07-14 |
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