CN1229914C - 弹性表面波器件及其制造方法 - Google Patents
弹性表面波器件及其制造方法 Download PDFInfo
- Publication number
- CN1229914C CN1229914C CNB028001958A CN02800195A CN1229914C CN 1229914 C CN1229914 C CN 1229914C CN B028001958 A CNB028001958 A CN B028001958A CN 02800195 A CN02800195 A CN 02800195A CN 1229914 C CN1229914 C CN 1229914C
- Authority
- CN
- China
- Prior art keywords
- layer
- aforementioned
- surface wave
- wave device
- elastic surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000011347 resin Substances 0.000 claims abstract description 127
- 229920005989 resin Polymers 0.000 claims abstract description 127
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011248 coating agent Substances 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 23
- 239000002904 solvent Substances 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 239000004411 aluminium Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 37
- 229910052719 titanium Inorganic materials 0.000 claims description 35
- 239000011435 rock Substances 0.000 claims description 26
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- 229910052758 niobium Inorganic materials 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 229910052720 vanadium Inorganic materials 0.000 claims description 15
- 229910052726 zirconium Inorganic materials 0.000 claims description 15
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229940006460 bromide ion Drugs 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 5
- 238000010897 surface acoustic wave method Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 144
- 239000002184 metal Substances 0.000 description 144
- 239000010408 film Substances 0.000 description 127
- 239000010936 titanium Substances 0.000 description 31
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 27
- 230000007797 corrosion Effects 0.000 description 24
- 238000005260 corrosion Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 23
- 238000012360 testing method Methods 0.000 description 21
- 230000002950 deficient Effects 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 14
- 229910000838 Al alloy Inorganic materials 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910018182 Al—Cu Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910016570 AlCu Inorganic materials 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- -1 Al:99wt% Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
氯离子浓度(ppm) | |
树脂材料A | 31 |
树脂材料B | 51 |
树脂材料C | 62 |
树脂材料D | 70 |
树脂材料E | 105 |
不合格数量 | |
树脂材料A | 0 |
树脂材料B | 0 |
树脂材料C | 1 |
树脂材料D | 15 |
树脂材料E | 55 |
氯离子浓度(ppm) | 溴离子浓度(ppm) | |
树脂材料A | 31 | 无法测出 |
树脂材料F | 33 | 280 |
树脂材料G | 33 | 204 |
树脂材料H | 33 | 182 |
树脂材料I | 33 | 153 |
树脂材料J | 33 | 96 |
不合格数量 | |
树脂材料A | 0 |
树脂材料F | 87 |
树脂材料G | 45 |
树脂材料H | 23 |
树脂材料I | 0 |
树脂材料J | 0 |
不合格数量 | |
树脂材料A | 0 |
树脂材料B | 0 |
树脂材料C | 0 |
树脂材料D | 7 |
树脂材料E | 32 |
不合格数量 | |
树脂材料A | 0 |
树脂材料F | 88 |
树脂材料G | 35 |
树脂材料H | 7 |
树脂材料I | 0 |
树脂材料J | 0 |
Claims (19)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001021153 | 2001-01-30 | ||
JP21153/2001 | 2001-01-30 | ||
JP2001021154 | 2001-01-30 | ||
JP21154/2001 | 2001-01-30 | ||
JP21154/01 | 2001-01-30 | ||
JP21153/01 | 2001-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1455985A CN1455985A (zh) | 2003-11-12 |
CN1229914C true CN1229914C (zh) | 2005-11-30 |
Family
ID=26608492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028001958A Expired - Lifetime CN1229914C (zh) | 2001-01-30 | 2002-01-24 | 弹性表面波器件及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6998687B2 (zh) |
EP (1) | EP1289133B1 (zh) |
JP (1) | JPWO2002061943A1 (zh) |
KR (1) | KR100479289B1 (zh) |
CN (1) | CN1229914C (zh) |
DE (1) | DE60226677D1 (zh) |
TW (1) | TW531960B (zh) |
WO (1) | WO2002061943A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4063000B2 (ja) * | 2001-08-14 | 2008-03-19 | 株式会社村田製作所 | 端面反射型表面波フィルタ |
JP3702961B2 (ja) * | 2002-10-04 | 2005-10-05 | 東洋通信機株式会社 | 表面実装型sawデバイスの製造方法 |
JP3689414B2 (ja) * | 2003-06-03 | 2005-08-31 | 東洋通信機株式会社 | 弾性表面波デバイスの製造方法 |
US7141909B2 (en) * | 2003-06-17 | 2006-11-28 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
US7888842B2 (en) * | 2004-02-13 | 2011-02-15 | University Of Maine System Board Of Trustees | Ultra-thin film electrodes and protective layer for high temperature device applications |
JP4331032B2 (ja) * | 2004-03-29 | 2009-09-16 | 日本電信電話株式会社 | 弾性表面波デバイスおよびその作製方法 |
JP4412123B2 (ja) * | 2004-09-09 | 2010-02-10 | エプソントヨコム株式会社 | 表面弾性波デバイス |
JP4670697B2 (ja) * | 2006-03-24 | 2011-04-13 | 株式会社デンソー | センサ装置の製造方法 |
JP5050620B2 (ja) * | 2007-04-13 | 2012-10-17 | 株式会社デンソー | 弾性表面波角速度センサおよびその製造方法 |
JP4401409B2 (ja) | 2007-10-12 | 2010-01-20 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス、及びその製造方法 |
US20090233225A1 (en) * | 2008-03-12 | 2009-09-17 | Johnson Donald W | Low chlorine epoxy resin formulations |
TWM361835U (en) * | 2008-10-16 | 2009-07-21 | Lingsen Precision Ind Ltd | Packaging and joining structure for MEMS microphone |
GB0914762D0 (en) | 2009-08-24 | 2009-09-30 | Univ Glasgow | Fluidics apparatus and fluidics substrate |
JP5434664B2 (ja) * | 2010-02-24 | 2014-03-05 | 株式会社村田製作所 | 弾性波素子の製造方法 |
DE102010026843A1 (de) * | 2010-07-12 | 2012-01-12 | Epcos Ag | Modul-Package und Herstellungsverfahren |
US10720350B2 (en) * | 2010-09-28 | 2020-07-21 | Kla-Tencore Corporation | Etch-resistant coating on sensor wafers for in-situ measurement |
GB201103211D0 (en) | 2011-02-24 | 2011-04-13 | Univ Glasgow | Fluidics apparatus, use of fluidics apparatus and process for the manufacture of fluidics apparatus |
US9490423B2 (en) * | 2014-11-11 | 2016-11-08 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same |
GB201420061D0 (en) | 2014-11-11 | 2014-12-24 | Univ Glasgow | Nebulisation of liquids |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054458A (ja) | 1983-09-06 | 1985-03-28 | Toshiba Corp | 樹脂封止型半導体装置 |
JP2525357B2 (ja) | 1985-12-25 | 1996-08-21 | 東レ株式会社 | 樹脂封止電子部品 |
JPS6381957A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 半導体封止用成形材 |
JPS63310938A (ja) | 1987-06-11 | 1988-12-19 | Kurasawa Kogaku Kogyo Kk | アルミニウム合金 |
JPH03222443A (ja) | 1990-01-29 | 1991-10-01 | Nec Corp | 樹脂封止型半導体装置の製造方法 |
JPH10163799A (ja) * | 1996-11-25 | 1998-06-19 | Sanyo Electric Co Ltd | 弾性表面波装置及びその製造方法 |
WO1999005788A1 (fr) * | 1997-07-28 | 1999-02-04 | Kabushiki Kaisha Toshiba | Dispositif de traitement d'ondes acoustiques de surface et son procede de fabrication |
JP3123477B2 (ja) * | 1997-08-08 | 2001-01-09 | 日本電気株式会社 | 表面弾性波素子の実装構造および実装方法 |
JP3659455B2 (ja) | 1997-12-01 | 2005-06-15 | 京セラ株式会社 | 弾性表面波装置 |
JP2000058593A (ja) * | 1998-08-03 | 2000-02-25 | Nec Corp | 表面弾性波素子の実装構造及びその実装方法 |
-
2002
- 2002-01-24 DE DE60226677T patent/DE60226677D1/de not_active Expired - Lifetime
- 2002-01-24 EP EP02716356A patent/EP1289133B1/en not_active Expired - Lifetime
- 2002-01-24 KR KR10-2002-7012762A patent/KR100479289B1/ko not_active IP Right Cessation
- 2002-01-24 CN CNB028001958A patent/CN1229914C/zh not_active Expired - Lifetime
- 2002-01-24 WO PCT/JP2002/000498 patent/WO2002061943A1/ja active IP Right Grant
- 2002-01-24 JP JP2002561367A patent/JPWO2002061943A1/ja active Pending
- 2002-01-24 US US10/240,426 patent/US6998687B2/en not_active Expired - Lifetime
- 2002-01-28 TW TW091101351A patent/TW531960B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPWO2002061943A1 (ja) | 2004-06-03 |
EP1289133A4 (en) | 2005-03-30 |
EP1289133B1 (en) | 2008-05-21 |
US6998687B2 (en) | 2006-02-14 |
WO2002061943A1 (fr) | 2002-08-08 |
KR100479289B1 (ko) | 2005-03-28 |
EP1289133A1 (en) | 2003-03-05 |
KR20020087430A (ko) | 2002-11-22 |
DE60226677D1 (de) | 2008-07-03 |
TW531960B (en) | 2003-05-11 |
US20030164529A1 (en) | 2003-09-04 |
CN1455985A (zh) | 2003-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1229914C (zh) | 弹性表面波器件及其制造方法 | |
CN1221076C (zh) | 弹性表面波装置及其制造方法及电子电路装置 | |
CN1315003C (zh) | 电子器件及其制造方法、溅射靶 | |
CN1180530C (zh) | 声表面波器件及其制造方法 | |
CN1926762A (zh) | 表面声波装置 | |
CN1277309C (zh) | 半导体器件及其制造方法 | |
CN1855467A (zh) | 半导体装置及其制造方法 | |
CN1610486A (zh) | 制造布线电路板的方法 | |
CN1828827A (zh) | 电子元件的制造方法、电子元件以及电子仪器 | |
CN1877989A (zh) | 半导体装置、半导体装置的制造方法、电子器件、电路基板及电子设备 | |
CN101078664A (zh) | 具有腔体的压力传感器以及其制造方法 | |
CN1994033A (zh) | 印刷电路板、其制造方法及半导体装置 | |
CN1808897A (zh) | 表面声波芯片、表面声波器件及表面声波器件的制造方法 | |
CN1453863A (zh) | 连接端子及其制造方法以及半导体装置及其制造方法 | |
CN1394388A (zh) | 弹性表面波滤波器 | |
CN1186824C (zh) | 制造化合物半导体器件的方法设备 | |
CN100343975C (zh) | 半导体装置的制造方法 | |
CN1591876A (zh) | 半导体装置 | |
CN1400734A (zh) | 声表面波元件及其制造方法以及使用该元件的声表面波装置及其制造方法 | |
CN1130824C (zh) | 弹性表面波元件 | |
CN1189920A (zh) | 半导体器件用的绝缘薄膜 | |
CN1201250A (zh) | 带电容的半导体器件的制造方法 | |
CN1750394A (zh) | 电子零件、电路基板、电子仪器和电子零件的制造方法 | |
CN1282024C (zh) | 液晶显示器的有源矩阵基板及其制造方法 | |
CN1255946C (zh) | 弹性表面波装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SKYWORKS PANASONIC FILTRATE SOLUTIONS JAPAN CO., L Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20150202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150202 Address after: Osaka Japan Patentee after: PANASONIC CORPORATION Address before: Japan's Osaka kamato City Patentee before: Matsushita Electric Industrial Co., Ltd. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Osaka Japan Patentee after: Japan Industrial Co., Ltd. Address before: Osaka Japan Patentee before: PANASONIC CORPORATION |
|
CX01 | Expiry of patent term |
Granted publication date: 20051130 |
|
CX01 | Expiry of patent term |