JP4401409B2 - 弾性表面波デバイス、及びその製造方法 - Google Patents
弾性表面波デバイス、及びその製造方法 Download PDFInfo
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- JP4401409B2 JP4401409B2 JP2007266214A JP2007266214A JP4401409B2 JP 4401409 B2 JP4401409 B2 JP 4401409B2 JP 2007266214 A JP2007266214 A JP 2007266214A JP 2007266214 A JP2007266214 A JP 2007266214A JP 4401409 B2 JP4401409 B2 JP 4401409B2
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- Prior art keywords
- acoustic wave
- surface acoustic
- forming
- hole
- wave device
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-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図3は,本発明に従う弾性表面波デバイスの第1の実施例の断面模式図を示す図である。図5は、その製造過程を説明する工程図である。
図6は,本発明に従う弾性表面波デバイスの第2の実施例の断面模式図を示す図である。
2 回路基板
10、11 弾性表面波形成用電極
13 中空部
14 メタルボール
15 配線電極
16 バリアメタル
17 メタルポスト
18 保護膜
20 枠状層
21 蓋体
30A 貫通孔部
30 ハロゲンフリー熱硬化性樹脂
31 熱硬化性フィルムレジスト
Claims (6)
- 圧電基板上に弾性表面波形成用電極を形成する工程と、
前記圧電基板上に形成された弾性表面波形成用電極を囲う枠状層を形成する工程と、
前記枠状層上に、貫通孔を有する蓋体を接合形成して、前記弾性表面波形成用電極との間に中空部を形成する工程と、
前記蓋体を接合した状態で真空中で加熱して、前記枠状層及び蓋体から発生するハロゲンガスを、前記貫通孔を通じて除去する工程と、更に、
前記ハロゲンガスを除去した後、前記貫通孔をハロゲンフリーの熱硬化性樹脂で塞ぐ工程を有する、
ことを特徴とする弾性表面波デバイスの製造方法。 - 請求項1において、
前記貫通孔を通じてハロゲンガスを除去する工程は、H2Oプラズマ中で処理することを特徴とする弾性表面波デバイスの製造方法。 - 請求項1において、
前記枠状層を形成する工程は,感光性ネガ型レジストをスピン塗布する工程を含むことを特徴とする弾性表面波デバイスの製造方法。 - 請求項1において、
前記蓋体を接合形成して中空部を形成する工程は,フィルム状の感光性ネガ型レジストを前記枠状層上に形成する工程を含むことを特徴とする弾性表面波デバイスの製造方法。 - 請求項1において、
前記貫通孔を塞ぐ工程は,ペースト状のハロゲンフリー熱硬化性樹脂を貫通孔中に印刷する工程を含むことを特徴とする弾性表面波デバイスの製造方法。 - 請求項1において、
前記貫通孔を塞ぐ工程は,フィルム状のハロゲンフリー熱硬化性樹脂を前記蓋体上に形成する工程を含むことを特徴とする弾性表面波デバイスの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266214A JP4401409B2 (ja) | 2007-10-12 | 2007-10-12 | 弾性表面波デバイス、及びその製造方法 |
KR20080093150A KR100957404B1 (ko) | 2007-10-12 | 2008-09-23 | 탄성 표면파 디바이스 및 그 제조 방법 |
US12/239,525 US7854050B2 (en) | 2007-10-12 | 2008-09-26 | Method of manufacturing a surface acoustic wave device |
CNA2008101685867A CN101409537A (zh) | 2007-10-12 | 2008-10-10 | 声表面波装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266214A JP4401409B2 (ja) | 2007-10-12 | 2007-10-12 | 弾性表面波デバイス、及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009094975A JP2009094975A (ja) | 2009-04-30 |
JP4401409B2 true JP4401409B2 (ja) | 2010-01-20 |
Family
ID=40533515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007266214A Expired - Fee Related JP4401409B2 (ja) | 2007-10-12 | 2007-10-12 | 弾性表面波デバイス、及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7854050B2 (ja) |
JP (1) | JP4401409B2 (ja) |
KR (1) | KR100957404B1 (ja) |
CN (1) | CN101409537A (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4468456B2 (ja) * | 2008-01-07 | 2010-05-26 | 富士通メディアデバイス株式会社 | 弾性波デバイス及びその製造方法 |
CN101965683B (zh) * | 2008-03-19 | 2014-01-29 | 株式会社村田制作所 | 表面声波装置 |
CN102227874B (zh) * | 2008-11-28 | 2014-07-23 | 京瓷株式会社 | 弹性波装置及其制造方法 |
JP5212484B2 (ja) * | 2009-01-15 | 2013-06-19 | 株式会社村田製作所 | 圧電デバイスおよび圧電デバイスの製造方法 |
JP5317912B2 (ja) * | 2009-09-29 | 2013-10-16 | 京セラ株式会社 | 弾性波装置及び弾性波装置の製造方法 |
JP5662052B2 (ja) * | 2010-04-22 | 2015-01-28 | 京セラ株式会社 | 弾性波装置 |
WO2012132147A1 (ja) * | 2011-03-28 | 2012-10-04 | 株式会社村田製作所 | 電子部品及びその製造方法 |
US9209380B2 (en) * | 2013-03-08 | 2015-12-08 | Triquint Semiconductor, Inc. | Acoustic wave device |
US10607642B2 (en) | 2013-03-18 | 2020-03-31 | Magnecomp Corporation | Multi-layer PZT microactuator with active PZT constraining layers for a DSA suspension |
US9741376B1 (en) | 2013-03-18 | 2017-08-22 | Magnecomp Corporation | Multi-layer PZT microactuator having a poled but inactive PZT constraining layer |
US11205449B2 (en) | 2013-03-18 | 2021-12-21 | Magnecomp Corporation | Multi-layer PZT microacuator with active PZT constraining layers for a DSA suspension |
US9330698B1 (en) | 2013-03-18 | 2016-05-03 | Magnecomp Corporation | DSA suspension having multi-layer PZT microactuator with active PZT constraining layers |
WO2015098694A1 (ja) * | 2013-12-26 | 2015-07-02 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
DE112014006080B4 (de) * | 2013-12-27 | 2022-05-12 | Murata Manufacturing Co., Ltd. | Vorrichtung für elastische Wellen |
US10128431B1 (en) * | 2015-06-20 | 2018-11-13 | Magnecomp Corporation | Method of manufacturing a multi-layer PZT microactuator using wafer-level processing |
JP6402704B2 (ja) * | 2015-11-19 | 2018-10-10 | 株式会社村田製作所 | 弾性波装置、デュプレクサ及びマルチプレクサ |
CN109314503B (zh) * | 2016-06-07 | 2022-08-12 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
JP6653646B2 (ja) * | 2016-12-02 | 2020-02-26 | 太陽誘電株式会社 | 電子部品およびその製造方法 |
US10263587B2 (en) | 2016-12-23 | 2019-04-16 | Avago Technologies International Sales Pte. Limited | Packaged resonator with polymeric air cavity package |
US10511285B1 (en) | 2017-02-28 | 2019-12-17 | Avago Technologies International Sales Pte. Limited | Anchored polymeric package for acoustic resonator structures |
US10804875B2 (en) | 2017-09-29 | 2020-10-13 | Avago Technologies International Sales Pte. Limited | Polymer lid wafer-level package with an electrically and thermally conductive pillar |
WO2019124126A1 (ja) * | 2017-12-22 | 2019-06-27 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置並びに弾性波装置の製造方法 |
CN109004084A (zh) * | 2018-08-01 | 2018-12-14 | 苏州伟锋智芯微电子有限公司 | 一种声表面波器件及声表面波器件的制造方法 |
CN113079441B (zh) * | 2020-01-06 | 2022-09-02 | 北京小米移动软件有限公司 | 扬声器及终端设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291864A (ja) * | 1992-04-10 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 弾性表面波素子実装回路とその製造方法 |
JPH11150440A (ja) | 1997-11-14 | 1999-06-02 | Nec Corp | フリップチップ実装型表面弾性波素子の樹脂封止構造 |
JP2000114918A (ja) * | 1998-10-05 | 2000-04-21 | Mitsubishi Electric Corp | 表面弾性波装置及びその製造方法 |
DE10000746A1 (de) * | 2000-01-11 | 2001-07-12 | Epcos Ag | Bauelement mit Ableitung für Pyrospannungen und Herstellverfahren |
DE60226677D1 (de) | 2001-01-30 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Saw-einrichtung und verfahren zu ihrer herstellung |
JP2004104117A (ja) * | 2002-08-23 | 2004-04-02 | Daishinku Corp | 電子部品用パッケージおよび当該パッケージを用いた圧電振動デバイス |
JP2005123820A (ja) * | 2003-10-15 | 2005-05-12 | Alps Electric Co Ltd | 表面弾性波装置、及びその製造方法 |
KR100714566B1 (ko) * | 2005-08-24 | 2007-05-07 | 삼성전기주식회사 | Fbar 소자의 제조 방법 |
WO2008081935A1 (ja) | 2006-12-28 | 2008-07-10 | Kyocera Corporation | 弾性表面波装置およびその製造方法 |
US8299678B2 (en) | 2007-06-28 | 2012-10-30 | Kyocera Corporation | Surface acoustic wave device and method for production of same |
-
2007
- 2007-10-12 JP JP2007266214A patent/JP4401409B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-23 KR KR20080093150A patent/KR100957404B1/ko not_active IP Right Cessation
- 2008-09-26 US US12/239,525 patent/US7854050B2/en not_active Expired - Fee Related
- 2008-10-10 CN CNA2008101685867A patent/CN101409537A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2009094975A (ja) | 2009-04-30 |
CN101409537A (zh) | 2009-04-15 |
KR20090037804A (ko) | 2009-04-16 |
US7854050B2 (en) | 2010-12-21 |
US20090096321A1 (en) | 2009-04-16 |
KR100957404B1 (ko) | 2010-05-11 |
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