CN1207768C - 具有绝缘体上硅结构的半导体器件及其制造方法 - Google Patents
具有绝缘体上硅结构的半导体器件及其制造方法 Download PDFInfo
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- CN1207768C CN1207768C CNB011415126A CN01141512A CN1207768C CN 1207768 C CN1207768 C CN 1207768C CN B011415126 A CNB011415126 A CN B011415126A CN 01141512 A CN01141512 A CN 01141512A CN 1207768 C CN1207768 C CN 1207768C
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000297308A JP3510576B2 (ja) | 2000-09-28 | 2000-09-28 | 半導体装置及びその製造方法 |
JP297308/2000 | 2000-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1347146A CN1347146A (zh) | 2002-05-01 |
CN1207768C true CN1207768C (zh) | 2005-06-22 |
Family
ID=18779443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011415126A Expired - Fee Related CN1207768C (zh) | 2000-09-28 | 2001-09-28 | 具有绝缘体上硅结构的半导体器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6492683B2 (zh) |
EP (1) | EP1193760B1 (zh) |
JP (1) | JP3510576B2 (zh) |
KR (1) | KR100438206B1 (zh) |
CN (1) | CN1207768C (zh) |
DE (1) | DE60130422T2 (zh) |
TW (1) | TW530369B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702620A (zh) * | 2014-12-11 | 2016-06-22 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448344B1 (ko) * | 2002-10-22 | 2004-09-13 | 삼성전자주식회사 | 웨이퍼 레벨 칩 스케일 패키지 제조 방법 |
US7190051B2 (en) * | 2003-01-17 | 2007-03-13 | Second Sight Medical Products, Inc. | Chip level hermetic and biocompatible electronics package using SOI wafers |
DE10319497B4 (de) * | 2003-04-30 | 2010-06-02 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines SOI-Feldeffekttransistorelements mit einem ohmschen Substratkontakt |
JP4746262B2 (ja) * | 2003-09-17 | 2011-08-10 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2005116623A (ja) * | 2003-10-03 | 2005-04-28 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US7276398B2 (en) * | 2003-10-23 | 2007-10-02 | Hewlett-Packard Development Company, L.P. | System and method for hermetically sealing a package |
TW200629466A (en) * | 2004-10-14 | 2006-08-16 | Koninkl Philips Electronics Nv | Semiconductor device having a frontside contact and vertical trench isolation and method of fabricating same |
US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
JP5220988B2 (ja) * | 2005-05-23 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN1992173B (zh) * | 2005-11-30 | 2010-04-21 | 硅起源股份有限公司 | 用于注入键合衬底以便导电的方法和结构 |
CN101385138B (zh) * | 2006-01-12 | 2011-05-11 | Nxp股份有限公司 | 具有正面衬底接触的绝缘体上半导体器件的制造方法 |
DE102006013203B3 (de) * | 2006-03-22 | 2008-01-10 | Infineon Technologies Ag | Integrierte Halbleiteranordnung mit Rückstromkomplex zur Verringerung eines Substratstroms und Verfahren zu deren Herstellung |
JP2007317954A (ja) * | 2006-05-26 | 2007-12-06 | Nec Electronics Corp | 半導体装置及びその製造方法 |
JP2008227120A (ja) * | 2007-03-13 | 2008-09-25 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
KR20100018156A (ko) * | 2008-08-06 | 2010-02-17 | 삼성전자주식회사 | 적층형 반도체 소자 및 그 제조 방법 |
JP2010287866A (ja) | 2009-06-15 | 2010-12-24 | Renesas Electronics Corp | 半導体装置 |
CN102456689A (zh) * | 2010-10-21 | 2012-05-16 | 中国科学院微电子研究所 | 一种衬底结构、半导体器件及其制造方法 |
KR101721117B1 (ko) | 2011-03-15 | 2017-03-29 | 삼성전자 주식회사 | 반도체 소자의 제조 방법 |
CN102956630B (zh) * | 2011-08-09 | 2016-06-29 | 索泰克公司 | 三维集成半导体***和形成该三维集成半导体***的方法 |
CN106687023B (zh) | 2015-08-13 | 2018-12-18 | Hoya株式会社 | 评价值计算装置以及电子内窥镜*** |
WO2017026539A1 (ja) | 2015-08-13 | 2017-02-16 | Hoya株式会社 | 評価値計算装置及び電子内視鏡システム |
CN110476200B (zh) * | 2017-03-29 | 2021-11-16 | 夏普株式会社 | Tft基板、tft基板的制造方法、显示装置 |
US20210408250A1 (en) * | 2020-06-24 | 2021-12-30 | Monolithic Power Systems, Inc. | Method of distributing metal layers in a power device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0254554A (ja) | 1988-08-19 | 1990-02-23 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP2654268B2 (ja) | 1991-05-13 | 1997-09-17 | 株式会社東芝 | 半導体装置の使用方法 |
JP3269536B2 (ja) | 1993-02-19 | 2002-03-25 | 株式会社デンソー | 半導体装置 |
US5479048A (en) * | 1994-02-04 | 1995-12-26 | Analog Devices, Inc. | Integrated circuit chip supported by a handle wafer and provided with means to maintain the handle wafer potential at a desired level |
JPH08153781A (ja) | 1994-09-27 | 1996-06-11 | Fuji Electric Co Ltd | 高耐圧横型半導体装置およびその使用方法 |
JPH08236754A (ja) | 1995-02-22 | 1996-09-13 | Fuji Electric Co Ltd | pチャネル型高耐圧MOSFET |
JPH0982814A (ja) * | 1995-07-10 | 1997-03-28 | Denso Corp | 半導体集積回路装置及びその製造方法 |
JP3111947B2 (ja) | 1997-10-28 | 2000-11-27 | 日本電気株式会社 | 半導体装置、その製造方法 |
JP2000031266A (ja) | 1998-05-01 | 2000-01-28 | Nec Corp | 半導体装置及びその製造方法 |
JP3699823B2 (ja) * | 1998-05-19 | 2005-09-28 | 株式会社東芝 | 半導体装置 |
JP2000196102A (ja) * | 1998-10-20 | 2000-07-14 | Citizen Watch Co Ltd | 半導体装置およびその製造方法 |
US6358782B1 (en) * | 1998-10-20 | 2002-03-19 | Citizen Watch Co., Ltd. | Method of fabricating a semiconductor device having a silicon-on-insulator substrate and an independent metal electrode connected to the support substrate |
KR20000045305A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 완전 공핍형 에스·오·아이 소자 및 그 제조방법 |
JP2000243967A (ja) * | 1999-02-22 | 2000-09-08 | Sony Corp | 半導体装置の製造方法 |
-
2000
- 2000-09-28 JP JP2000297308A patent/JP3510576B2/ja not_active Expired - Fee Related
-
2001
- 2001-09-27 TW TW090123881A patent/TW530369B/zh not_active IP Right Cessation
- 2001-09-27 US US09/966,035 patent/US6492683B2/en not_active Expired - Lifetime
- 2001-09-27 KR KR10-2001-0060093A patent/KR100438206B1/ko not_active IP Right Cessation
- 2001-09-28 DE DE60130422T patent/DE60130422T2/de not_active Expired - Lifetime
- 2001-09-28 CN CNB011415126A patent/CN1207768C/zh not_active Expired - Fee Related
- 2001-09-28 EP EP01123462A patent/EP1193760B1/en not_active Expired - Lifetime
-
2002
- 2002-06-24 US US10/178,429 patent/US6541314B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702620A (zh) * | 2014-12-11 | 2016-06-22 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2002110950A (ja) | 2002-04-12 |
DE60130422T2 (de) | 2008-06-05 |
JP3510576B2 (ja) | 2004-03-29 |
TW530369B (en) | 2003-05-01 |
US20020036330A1 (en) | 2002-03-28 |
EP1193760A2 (en) | 2002-04-03 |
DE60130422D1 (de) | 2007-10-25 |
US6492683B2 (en) | 2002-12-10 |
US6541314B2 (en) | 2003-04-01 |
EP1193760B1 (en) | 2007-09-12 |
KR100438206B1 (ko) | 2004-07-01 |
KR20020025778A (ko) | 2002-04-04 |
CN1347146A (zh) | 2002-05-01 |
EP1193760A3 (en) | 2005-03-16 |
US20020171109A1 (en) | 2002-11-21 |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050622 Termination date: 20160928 |
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CF01 | Termination of patent right due to non-payment of annual fee |