CN115106914B - Pasting and polishing process of monocrystalline silicon wafer - Google Patents
Pasting and polishing process of monocrystalline silicon wafer Download PDFInfo
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- CN115106914B CN115106914B CN202210578251.2A CN202210578251A CN115106914B CN 115106914 B CN115106914 B CN 115106914B CN 202210578251 A CN202210578251 A CN 202210578251A CN 115106914 B CN115106914 B CN 115106914B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 238000007517 polishing process Methods 0.000 title claims abstract description 10
- 239000012188 paraffin wax Substances 0.000 claims abstract description 120
- 235000013871 bee wax Nutrition 0.000 claims abstract description 62
- 239000012166 beeswax Substances 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 239000000203 mixture Substances 0.000 claims abstract description 60
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims abstract description 43
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims abstract description 43
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 15
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 230000006835 compression Effects 0.000 claims description 9
- 238000007906 compression Methods 0.000 claims description 9
- 238000012669 compression test Methods 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 6
- 239000010419 fine particle Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000010309 melting process Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000002918 waste heat Substances 0.000 claims description 3
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000010298 pulverizing process Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 37
- 229910052710 silicon Inorganic materials 0.000 abstract description 36
- 239000010703 silicon Substances 0.000 abstract description 36
- 235000012431 wafers Nutrition 0.000 description 52
- 238000005259 measurement Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J191/00—Adhesives based on oils, fats or waxes; Adhesives based on derivatives thereof
- C09J191/06—Waxes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a pasting and polishing process of a monocrystalline silicon wafer, which belongs to the field of silicon wafer processing and comprises the following steps: s1: crushing paraffin wax, beeswax and rosin; s2: mixing the materials in a mixing container according to a specified proportion; s3: heating the container, stirring and dissolving, cooling and measuring data; s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate; s5: stopping heating the light plate, placing the silicon wafer before the paraffin mixture is cooled, crushing the conventional paraffin into particles, wherein the diameter of the paraffin crushed into particles is smaller than 10mm, the diameter of the paraffin particles smaller than 10mm accounts for 80% of the total diameter, and performing stable adhesion treatment on the silicon wafer, so that the polished surface of the silicon wafer can be completely exposed, and the polishing treatment is convenient to perform, thereby solving the problems of inconvenient fixation and the like of the conventional silicon wafer.
Description
Technical Field
The invention relates to the field of silicon wafer processing, in particular to a pasting and polishing process of a monocrystalline silicon wafer.
Background
Silicon chips are milestones for promoting the technical field of modern microelectronics, and the progress in aviation, industry, agriculture, national defense and the like can be greatly improved through the microelectronics technology; the thickness of the silicon wafer is thinner in general processing, the thickness of part of the silicon wafer is a few millimeters or even less than one millimeter, and clamping processing is difficult when the silicon wafer is polished.
At present, when polishing thinner monocrystalline silicon wafers, part of equipment is fixed by adsorption or clamping jaws, and the fixing effect can be achieved, but the following problems exist in the polishing process:
1. if adsorption type fixing is adopted, once foreign matters remain on a supporting workbench, the silicon wafers cannot be positioned on the same horizontal plane, and phenomena such as excessive local polishing and insufficient local polishing of the silicon wafers can occur in the polishing process, so that the whole quality of the silicon wafers is affected;
2. If clamping jaw type fixing is adopted, local polishing cannot be performed on the edge of the silicon wafer in place, the silicon wafer cannot be completely exposed for polishing, the clamping jaw can also influence the operation of polishing equipment, even the polishing equipment is damaged, and the method is unfavorable for practical application.
In view of the above problems, we propose a process for bonding and polishing monocrystalline silicon wafers.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a pasting and polishing process for monocrystalline silicon wafers, which can realize stable pasting treatment on the silicon wafers, so that polished surfaces of the silicon wafers can be completely exposed, and polishing treatment is convenient to carry out, thereby solving the problems of inconvenient fixing of the traditional silicon wafers and the like.
2. Technical proposal
In order to solve the problems, the invention adopts the following technical scheme.
A pasting and polishing process of monocrystalline silicon wafers comprises the following steps:
S1: crushing paraffin wax, beeswax and rosin;
s2: mixing the materials in a mixing container according to a specified proportion;
S3: heating the container, stirring and dissolving, cooling and measuring data;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the heated plate was stopped and the wafer was placed before the paraffin mixture was cooled.
Further, the crushing method of paraffin, beeswax and rosin in the step S1 comprises the following steps:
A1: crushing conventional paraffin into particles, wherein the diameter of the crushed paraffin is smaller than 10mm, and the particle paraffin with the diameter smaller than 10mm accounts for 80% of the whole;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the beeswax crushed into the fine particles is smaller than 5mm, and the beeswax with the diameter smaller than 5mm accounts for 90% of the whole;
A3: the rosin blocks are crushed into powder and stored in a sealed container.
Further, the mixing container in the step S2 adopts a 314 stainless steel heating tank, and a funnel-shaped discharging pipe is arranged at the bottom of the 314 stainless steel heating tank;
Beeswax is first put 314 into a stainless steel heating tank, and the put beeswax accounts for one fifth of the capacity of the heating tank.
Further, the method for heating, dissolving and cooling the raw materials in the step S3 comprises the following steps:
b1: preheating a heating tank for 2min to raise the temperature to 50-60 ℃, wherein beeswax begins to melt slowly during preheating;
B2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, and the heating tank is continuously heated at the moment, so that the temperature of the heating tank is kept between 110 and 130 ℃, and the inside of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, wherein the paraffin is fully fused with the beeswax in the melting process, and the paraffin accounts for four fifths of the capacity of the heating tank;
B4: and finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, and discharging the mixture into a mold until the mixture is naturally cooled and solidified.
Further, the proportion of paraffin, beeswax and rosin is determined according to the thickness of the single crystal plate, and the proportioning method is as follows:
If the thickness of the single crystal wafer is less than 1mm (and comprises 1 mm), the proportion of paraffin, beeswax and rosin is 1:1.5:0.6;
If the thickness of the single crystal wafer is more than 1-3mm (and comprises 3 mm), the proportion of paraffin, beeswax and rosin is 1:1.2:0.8;
if the thickness of the single crystal wafer is more than 3-5mm (and more than 5mm is included), the proportion of paraffin, beeswax and rosin is 1:1:0.5.
Further, in S4, the light plate is heated, and the cooled paraffin mixture is wiped against the light plate, which includes the following steps:
c1: the light plate with the surface roughness of Ra1.6 is selected, the thickness is not limited, and the size is larger than that of a single chip.
C2: heating the light plate for 1min to make the surface temperature of the light plate reach 70-85 ℃;
And C3: and taking a piece of solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of the optical plate, melting the paraffin mixture by utilizing heat on the optical plate, so that the paraffin mixture is uniformly smeared on the optical plate, and keeping the paraffin mixture in a liquid state by utilizing the waste heat of the optical plate.
Further, in the step S5, after the paraffin mixture is wiped uniformly, heating the optical plate is stopped, and the single crystal wafer is placed on the optical plate under the condition that the paraffin mixture is kept in a liquid state, and the paraffin mixture is slowly cooled and solidified along with the reduction of the surface temperature of the optical plate, and meanwhile, the single crystal wafer is placed on the optical plate and is tightly attached to the optical plate;
finally, the optical plate can be fixed on a machine tool, parameters of the machine tool are corrected, and the single crystal wafer is processed.
Further, the determining of the data in S3 includes:
(1) The proportion of paraffin, beeswax and rosin is 1:1.5: intensity determination at 0.6: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 20MPa, 30MPa and 35MPa respectively, performing a compression test, and recording compression resistance values;
(2) The proportion of paraffin, beeswax and rosin is 1:1.2: intensity determination at 0.8: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 25MPa, 30MPa and 40MPa respectively, performing a compression test, and recording compression resistance values;
(3) The proportion of paraffin, beeswax and rosin is 1:1: intensity determination at 0.5: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 35MPa, 40MPa and 50MPa respectively, performing a compression test, and recording compression resistance values;
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) The invention can fix the silicon wafer to be polished on the optical plate conveniently and stably, and then uses the optical plate as a fixing medium to be connected to a proper position of a machine tool, so that the polished surface of the silicon wafer is completely exposed, thereby being convenient for polishing the silicon wafer.
(2) According to the invention, paraffin, beeswax and rosin are used as a pasting medium, and multiple tests and data measurement are carried out, so that the proportion can be carried out according to silicon wafers with different thicknesses, and paraffin mixtures with different hardness can be selected for pasting the silicon wafers with different thicknesses.
(3) The paraffin, the beeswax and the rosin adopted in the invention are used as main connecting mediums, the raw materials are rich, the cost is low, the proportion is simple, the stable fixing operation on the silicon wafer can be realized by using a small amount of paraffin mixture, and the practical value is increased.
Drawings
FIG. 1 is a bar graph of the material ratios of paraffin, beeswax and rosin.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments, and that all other embodiments obtained by persons of ordinary skill in the art without making creative efforts based on the embodiments in the present invention are within the protection scope of the present invention.
Example 1:
a pasting and polishing process of monocrystalline silicon wafers comprises the following steps:
S1: crushing paraffin wax, beeswax and rosin;
s2: mixing the materials in a mixing container according to a specified proportion;
S3: heating the container, stirring and dissolving, cooling and measuring data;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the heated plate was stopped and the wafer was placed before the paraffin mixture was cooled.
In the embodiment, the silicon wafer to be polished can be conveniently and stably fixed on the optical plate, and then the optical plate is used as a fixing medium to be connected to a proper position of a machine tool, so that the polished surface of the silicon wafer is completely exposed, and the silicon wafer is convenient to polish.
Wherein, the crushing method of paraffin, beeswax and rosin in S1 comprises the following steps:
A1: crushing conventional paraffin into particles, wherein the diameter of the crushed paraffin is smaller than 10mm, and the particle paraffin with the diameter smaller than 10mm accounts for 80% of the whole;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the beeswax crushed into the fine particles is smaller than 5mm, and the beeswax with the diameter smaller than 5mm accounts for 90% of the whole;
A3: the rosin blocks are crushed into powder and stored in a sealed container.
The mixing container in S2 adopts a 314 stainless steel heating tank, and a funnel-shaped discharging pipe is arranged at the bottom of the 314 stainless steel heating tank;
Beeswax is first put 314 into a stainless steel heating tank, and the put beeswax accounts for one fifth of the capacity of the heating tank.
Wherein, the method for heating, dissolving and cooling the raw materials in S3 comprises the following steps:
b1: preheating a heating tank for 2min to raise the temperature to 50-60 ℃, wherein beeswax begins to melt slowly during preheating;
B2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, and the heating tank is continuously heated at the moment, so that the temperature of the heating tank is kept between 110 and 130 ℃, and the inside of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, wherein the paraffin is fully fused with the beeswax in the melting process, and the paraffin accounts for four fifths of the capacity of the heating tank;
B4: and finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, and discharging the mixture into a mold until the mixture is naturally cooled and solidified.
In the embodiment, the beeswax is added into the paraffin according to the specified proportion, so that the toughness of the paraffin after mixing can be effectively improved, the dissolved paraffin mixed substance is soft, but the hardness of the paraffin is not improved, and phenomena such as cracking and the like are avoided;
the rosin is added into the paraffin according to the specified proportion, so that the hardness of the paraffin can be increased, but the toughness of the paraffin cannot be improved, and the combination of the rosin and the beeswax can not only improve the toughness of the paraffin, but also improve the hardness of the paraffin, so that the comprehensive performance of the paraffin is better.
The proportion of paraffin, beeswax and rosin is determined according to the thickness of the single crystal plate, and the proportion method is as follows:
If the thickness of the single crystal wafer is less than 1mm (and comprises 1 mm), the proportion of paraffin, beeswax and rosin is 1:1.5:0.6;
If the thickness of the single crystal wafer is more than 1-3mm (and comprises 3 mm), the proportion of paraffin, beeswax and rosin is 1:1.2:0.8;
if the thickness of the single crystal wafer is more than 3-5mm (and more than 5mm is included), the proportion of paraffin, beeswax and rosin is 1:1:0.5.
And the quality of paraffin mixtures adopted for silicon wafers with different thicknesses is different, when the silicon wafers are thicker, the adopted paraffin mixtures are bigger in sealing, and the hardness is stronger, so that the silicon wafers are tightly attached to the light plate, the shaking and dislocation phenomena are reduced, and the use stability of the silicon wafers is improved.
In this embodiment, paraffin, beeswax and rosin are used as the adhering medium, and multiple tests and data measurement are performed to prepare the mixture according to silicon wafers with different thicknesses, and paraffin mixtures with different hardness are selected for adhering the silicon wafers with different thicknesses.
Wherein, in S4, the light plate is heated, and the cooled paraffin mixture is wiped to the light plate, comprising the following steps:
c1: the light plate with the surface roughness of Ra1.6 is selected, the thickness is not limited, and the size is larger than that of a single chip.
C2: heating the light plate for 1min to make the surface temperature of the light plate reach 70-85 ℃;
And C3: and taking a piece of solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of the optical plate, melting the paraffin mixture by utilizing heat on the optical plate, so that the paraffin mixture is uniformly smeared on the optical plate, and keeping the paraffin mixture in a liquid state by utilizing the waste heat of the optical plate.
In S5, after the paraffin mixture is wiped uniformly, stopping heating the optical plate, placing the single crystal wafer on the optical plate under the condition that the paraffin mixture is kept in a liquid state, slowly cooling and solidifying the paraffin mixture along with the reduction of the surface temperature of the optical plate, and placing the single crystal wafer on the optical plate to be tightly attached to the optical plate;
finally, the optical plate can be fixed on a machine tool, parameters of the machine tool are corrected, and the single crystal wafer is processed.
In the embodiment, the paraffin, the beeswax and the rosin are adopted as main connecting mediums, so that the raw materials are rich, the cost is low, the proportion is simple, the stable fixing operation on the silicon wafer can be realized by using a small amount of paraffin mixture, and the practical value is increased.
Example 2:
in combination with the above example 1, the data measurement in S3 was supplemented:
The data determination in S3 includes:
(1) The proportion of paraffin, beeswax and rosin is 1:1.5: intensity determination at 0.6: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 20MPa, 30MPa and 35MPa respectively, performing a compression test, and recording compression resistance values;
(2) The proportion of paraffin, beeswax and rosin is 1:1.2: intensity determination at 0.8: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 25MPa, 30MPa and 40MPa respectively, performing a compression test, and recording compression resistance values;
(3) The proportion of paraffin, beeswax and rosin is 1:1: intensity determination at 0.5: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 35MPa, 40MPa and 50MPa respectively, performing a compression test, and recording compression resistance values;
In the embodiment, data measurement is performed on paraffin mixtures with different proportions, so that the paraffin mixtures are ensured to have enough strength when being adhered to the silicon wafer, the overall quality of the paraffin mixtures is ensured, the silicon wafer is smoothly polished, and the probability of processing faults of the silicon wafer is reduced.
The above is only a preferred embodiment of the present invention; the scope of the invention is not limited in this respect. Any person skilled in the art, within the technical scope of the present disclosure, may apply to the present invention, and the technical solution and the improvement thereof are all covered by the protection scope of the present invention.
Claims (5)
1. The pasting and polishing process of the monocrystalline silicon piece is characterized by comprising the following steps of:
S1: crushing paraffin wax, beeswax and rosin;
The crushing method of the paraffin, the beeswax and the rosin in the S1 comprises the following steps:
A1: crushing conventional paraffin into particles, wherein the diameter of the crushed paraffin is smaller than 10mm, and the particle paraffin with the diameter smaller than 10mm accounts for 80% of the whole;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the beeswax crushed into the fine particles is smaller than 5mm, and the beeswax with the diameter smaller than 5mm accounts for 90% of the whole;
A3: pulverizing bulk Colophonium into powder, and storing in sealed container;
s2: mixing the materials in a mixing container according to a specified proportion;
the mixing container in the step S2 adopts a 314 stainless steel heating tank, and a funnel-shaped discharging pipe is arranged at the bottom of the 314 stainless steel heating tank;
putting 314 beeswax into a stainless steel heating tank, wherein the put beeswax accounts for one fifth of the capacity of the heating tank;
S3: heating the container, stirring and dissolving, cooling and measuring data;
the method for heating, dissolving and cooling the raw materials in the step S3 comprises the following steps:
b1: preheating a heating tank for 2min to raise the temperature to 50-60 ℃, wherein beeswax begins to melt slowly during preheating;
B2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, and the heating tank is continuously heated at the moment, so that the temperature of the heating tank is kept between 110 and 130 ℃, and the inside of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, wherein the paraffin is fully fused with the beeswax in the melting process, and the paraffin accounts for four fifths of the capacity of the heating tank;
B4: finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, and discharging the mixture into a mold until the mixture is naturally cooled and solidified;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the heated plate was stopped and the wafer was placed before the paraffin mixture was cooled.
2. The process for sticking and polishing the monocrystalline silicon piece according to claim 1, wherein the adding proportion of the paraffin, the beeswax and the rosin is determined according to the thickness of the monocrystalline piece, and the proportioning method is as follows:
(1) If the thickness of the single crystal wafer is less than 1mm and comprises 1mm, the proportion of paraffin, beeswax and rosin is 1:1.5:0.6;
(2) If the thickness of the single crystal wafer is more than 1-3mm and comprises 3mm, the proportion of paraffin, beeswax and rosin is 1:1.2:0.8;
(3) If the thickness of the single crystal wafer is more than 3-5mm and the single crystal wafer comprises more than 5mm, the proportion of paraffin, beeswax and rosin is 1:1:0.5.
3. The process for bonding and polishing a monocrystalline silicon piece according to claim 1, wherein the step of heating the light panel and wiping the cooled paraffin mixture against the light panel in S4 comprises the steps of:
c1: selecting a light plate with the surface roughness of Ra1.6, wherein the thickness is not limited, and the size is larger than that of a single chip;
C2: heating the light plate for 1min to make the surface temperature of the light plate reach 70-85 ℃;
And C3: and taking a piece of solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of the optical plate, melting the paraffin mixture by utilizing heat on the optical plate, so that the paraffin mixture is uniformly smeared on the optical plate, and keeping the paraffin mixture in a liquid state by utilizing the waste heat of the optical plate.
4. The process for attaching and polishing a monocrystalline silicon wafer as defined in claim 1, wherein in step S5, after the paraffin mixture is wiped uniformly, heating the optical plate is stopped, placing the monocrystalline silicon wafer on the optical plate while the paraffin mixture is kept in a liquid state, and as the surface temperature of the optical plate decreases, slowly cooling and solidifying the paraffin mixture while placing the monocrystalline silicon wafer on the optical plate to be tightly attached to the optical plate;
and finally, fixing the optical plate on a machine tool, correcting parameters of the machine tool, and processing the single crystal wafer.
5. The process for bonding and polishing a monocrystalline silicon piece as defined in claim 1, wherein the data determination in S3 includes:
(1) The proportion of paraffin, beeswax and rosin is 1:1.5: intensity determination at 0.6: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 20MPa, 30MPa and 35MPa respectively, performing a compression test, and recording compression resistance values;
(2) The proportion of paraffin, beeswax and rosin is 1:1.2: intensity determination at 0.8: placing the liquid taking-out part of the paraffin mixture in the proportion in a mould, isolating the liquid taking-out part from the mould for 10min, cooling and solidifying the liquid taking-out part, placing the liquid taking-out part under a press, setting the pressure of the press to 25MPa, 30MPa and 40MPa respectively, performing a compression test, and recording compression resistance values;
(3) The proportion of paraffin, beeswax and rosin is 1:1: intensity determination at 0.5: the liquid-extracted portion of the paraffin mixture in this ratio was placed in a mold and kept for 10 minutes under water, and after cooling and solidification, it was placed under a press machine, the press pressures were set to 35MPa, 40MPa and 50MPa, respectively, and compression tests were performed and compression resistance values were recorded.
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| CN103692337A (en) * | 2013-12-18 | 2014-04-02 | 杭州晶地半导体有限公司 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
| CN104369085A (en) * | 2014-09-15 | 2015-02-25 | 华东光电集成器件研究所 | Silicon wafer polishing and bonding method |
| CN111621262A (en) * | 2020-05-18 | 2020-09-04 | 江苏聚冠新材料科技有限公司 | Wafer bonding wax and preparation method thereof |
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| CN86101702A (en) * | 1986-03-12 | 1986-09-10 | 洛阳单晶硅厂 | Waxy-liquid adhesive |
| JPH10265741A (en) * | 1997-03-26 | 1998-10-06 | Mitsui Chem Inc | Tacky film for grinding back of semiconductor wafer and grinding back of semiconductor wafer |
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
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| CN115106914A (en) | 2022-09-27 |
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