TW584585B - Beveling wheel for processing silicon wafer outer periphery and the manufacture method thereof - Google Patents
Beveling wheel for processing silicon wafer outer periphery and the manufacture method thereof Download PDFInfo
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- TW584585B TW584585B TW090133373A TW90133373A TW584585B TW 584585 B TW584585 B TW 584585B TW 090133373 A TW090133373 A TW 090133373A TW 90133373 A TW90133373 A TW 90133373A TW 584585 B TW584585 B TW 584585B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
Β7 五、發明說明（1 [發明所屬之技術領域] 本發明係有關於_種用以加工石夕晶外 輪及其製造方法。 外周部之斜削 [習知背景] 矽晶圓之加工程序’係一種基本之 用外周刀哎权报府认雄 4私序係利 次杯形磨輪等，將矽晶錠形成為預定之尺 並利用内周刃將該圓柱狀晶錠切割成預 2= ’再利用斜削輪使該.晶圓之外周部面進行倒 、‘，然後對晶圓面進行研磨、姓刻、拋光加卫，而— 成積體電路之基板者。 70 上述加工程序中，利用斜削輪對該晶圓之外周部面進 行倒角研磨之加工，係使用如第3圖或第4圖所示之斜削 輪’如第5圖所示般進行研磨加工者。 /第3(a)圖係顯示斜削輪之外觀之一例之立體圖，第3(y 圖係外周部之部分放大圖。輪1〇〇係於金屬盤心ι〇ι之外 周部固著有形成1條或複數條溝之磨粒層1G2(第3圖係顯 示複數條溝之例）·，金屬盤心1〇1係鐵製之圓盤狀金屬盤 心，而磨粒層102係由鑽石磨粒與金屬結合劑所構成。 第4圖係一顯示斜削輪磨粒層之溝形狀之例子之圖。 第4(a)圖係顯示形成1條溝1〇3a之例子，第4(b)圖係顯示 分別形成複數條粗加工用之溝103b與精加工用之溝1〇3e 之例子，第4(c)圖係顯示形成複數條相同之溝1〇3d之例 子。 第5(a)圖係顯示石夕晶圓外周部之研磨加工方法之一例Β7 V. Description of the invention (1 [Technical field to which the invention belongs] The present invention relates to _ a kind of outer ring for manufacturing Shi Xijing and its manufacturing method. Beveling of the peripheral part [Knowledge background] Silicon wafer processing program ' It is a basic use of a peripheral knife. The right order newspaper admires the 4th private order is the Ricci cup-shaped grinding wheel, etc., the silicon ingot is formed into a predetermined size, and the cylindrical ingot is cut into a pre 2 by an inner peripheral blade. Then use the chamfering wheel to invert the outer peripheral surface of the wafer. Then, the wafer surface is ground, engraved, polished, and guarded to form the substrate of the integrated circuit. 70 In the above processing procedure, The chamfer grinding of the outer peripheral surface of the wafer using a chamfering wheel is performed by using a chamfering wheel shown in FIG. 3 or 4 as shown in FIG. 5. / 第Figure 3 (a) is a perspective view showing an example of the appearance of a beveling wheel. Figure 3 (y) is an enlarged view of a part of the outer periphery. The wheel 100 is fixed to the outer periphery of the metal disc core. 1 Abrasive layer 1G2 of multiple grooves (Figure 3 shows an example of multiple grooves). · Metal core 101 is made of iron. The disc-shaped metal disc center, and the abrasive grain layer 102 is composed of diamond abrasive grains and a metal bonding agent. FIG. 4 is a diagram showing an example of the groove shape of the abrasive grain layer of the bevel wheel. FIG. 4 (a) Fig. 4 (c) shows an example in which one groove 103a is formed, and Fig. 4 (b) shows an example in which a plurality of grooves 103b for roughing and 103g for finishing are separately formed, and Fig. 4 (c) shows An example in which a plurality of identical grooves 103d are formed. Fig. 5 (a) shows an example of a polishing processing method for the outer peripheral portion of the Shixi wafer.
1· ·!訂 - 4- A7 ^ ------__£7__ 五、發明說明（2 ) " ~_ 之囷第5(b)圖係顯示加工後之矽晶圓之外闽i 圖。石夕曰圓夕， 外周部形狀之 曰曰 加工程序中，於晶圓被截斯之狀態下， ::::之邊緣部呈尖銳狀，故於各加工程序中之處理作: ，生缺口，而由於具有該缺σ之晶片會使晶圓面污損 且或產生損傷或龜裂等，導致半導體裝置之產量降低。因 此’可實施用以削去晶圓之外周部端面之邊緣部之斜削加 工：該斜削加工係，如第5⑷圖所示，藉真空吸盤3〇〇固 持晶圓200，並使晶圓2〇〇與輪1〇〇旋轉，以將外周部研 磨加工成如第5(b)圖所示之形狀。 [發明所歌解決之課題] 如上述晶圓外周部加工用之斜削輪中，以往係使用金 屬結合劑作為形成磨粒層之結合劑。該金屬結合劑，係使 用銅、錫、姑之單體金屬或合金之粉末，將該金屬粉末與 磨粒之混合物充填於模具等後，藉由以700〜90CTC燒結， 使磨粒層固著於金屬盤心。該燒結方法係在將金屬粉末與 磨粒之成形混合物加壓、加熱於鐵（例如S25C〜S45C)製之 金屬盤心上之狀態下，藉燒結使磨粒層直接固著於金屬盤 心之方法。 然而，使用鐵製金屬盤心 < 習知之斜削輪，由於輪之 重量大，於研磨機械上之安裝、拆卸之作業性不良^又， 由於研磨加工時所使用之研磨液為水，故會發生鐵掣 < 金 屬盤心生鏽，污染矽晶圓之問題。對於金屬盤心生鏽之情 形，亦可於鐵製之金屬盤心鍍上Ni鍍層，或使用不鏽鋼製 之金屬盤心，然而，Ni鍍層並無法完全防鏽.，又，不鏽鋼 本紙張尺度適用中國國家標準（raS) A4規格（210χ297公漦）1 · !! Order-4- A7 ^ ------__ £ 7__ 5. Description of the Invention (2) " ~ _ The 5th (b) picture shows the processed silicon wafers outside Illustration. Shi Xiyue, Yuanxi, the shape of the peripheral part of the processing program, in the state of the wafer being truncated, the edge of :::: is sharp, so the processing in each processing program is: However, because a wafer with this lack of σ will foul the wafer surface and cause damage or cracks, etc., the yield of semiconductor devices will decrease. Therefore, it is possible to perform an oblique cutting process for cutting off the edge portion of the outer peripheral end surface of the wafer: This oblique processing system, as shown in FIG. 5A, holds the wafer 200 by a vacuum chuck 300, and makes the wafer The 200 and the wheel 100 are rotated to grind the outer peripheral portion into a shape as shown in FIG. 5 (b). [Problems Solved by the Invention] As described above, in the beveling wheel for processing the outer peripheral portion of a wafer, a metal bonding agent has conventionally been used as a bonding agent for forming an abrasive grain layer. The metal binder is a powder of copper, tin, or a single metal or alloy, and the mixture of the metal powder and the abrasive grains is filled in a mold or the like, and then the abrasive grain layer is fixed by sintering at 700 to 90 CTC. To the metal disc heart. In the sintering method, the abrasive grain layer is directly fixed to the core of the metal disc by sintering in a state where the forming mixture of the metal powder and the abrasive particles is pressurized and heated on a metal disc core made of iron (for example, S25C ~ S45C). method. However, the use of a ferrous metal disc core < the conventional oblique cutting wheel, due to the heavy weight of the wheel, is poor in the workability of mounting and dismounting on the grinding machine ^ and because the grinding liquid used in the grinding process is water, so Problems such as rusting of metal cores and contamination of silicon wafers may occur. For the case where the metal plate core is rusty, it is also possible to plate the metal plate core made of iron with Ni plating, or use a metal plate core made of stainless steel. However, the Ni plating cannot completely prevent rust. Also, the stainless steel paper size is applicable. China National Standard (raS) A4 specification (210x297 cm)
A7 ---—--- B7 五、發明說明（3 ，材料成本高，重量亦大，且亦有磨粒層之接著性低之問 題。 』針對該問題，可以鋁製或鋁合金製之金屬盤心取代鐵 製之金屬盤心。然而’若金屬盤心以鋁製或鋁合金製，則 7固著磨粒層於金屬盤心之燒結程序中，由於鋁或鋁合金 無法承受燒結溫度，故無法採用以燒結直接固著之方式。 在此亦可以接著劑固著來取代以燒結直接固著.，然而’ 般之超磨粒磨輪等所使用之以習知環氧樹脂系為主體之 接著劑，由於其組成本身沒有導電性，故無法用於固著斜 削輪之磨粒層。斜削輪之磨粒層係於前述形成溝時進行放 電加卫’而該放電加工之加卫物係以電阻（電阻率)低者為 佳。電阻率若為1χ 1〇3ω . cm以上則會發熱而使加工時發 生困難，故該電阻率以1χ 10% .⑽以下為佳，而不具有 導電性之接著劑於放電加工時會發熱，故用於固著斜削輪 之磨粒層並不適當。 本發明所欲解決之課題，係在於使斜削輪之磨粒.層固， 者用之接著劑具有導電性，而可採用以輕金屬製或輕金屬 合金製之金屬盤心作為金屬盤心，以減輕斜削輪之重量。 [解決課題之手段] 本發明係一種矽晶圓外周部加工用之斜削輪，.其係於 金屬盤心之外周部固著有形成丨條或複數條溝之磨粒層 者，又，前述金屬盤心係鋁製或鋁合金製之金屬盤心，且 前述磨粒層係使用金屬結合劑或導電性樹脂結合劑作為結 合劑之磨粒層，而，前述磨粒層則藉由含有金屬粉末之接 本纸張尺度適用中國國家標準（CNS) A4規格（210X297公發） 6 -A7 -------- B7 V. Description of the invention (3, material cost is high, weight is large, and there is also the problem of low adhesion of the abrasive grain layer. "To solve this problem, it can be made of aluminum or aluminum alloy. The metal core replaces the iron core. However, if the metal core is made of aluminum or aluminum alloy, the 7 fixed abrasive layer is used in the sintering process of the metal core, because aluminum or aluminum alloy cannot withstand the sintering temperature. Therefore, direct sintering cannot be used. Adhesive fixation can also be used instead of direct sintering. However, conventional epoxy resins are used as the main body for super abrasive abrasive wheels. Agent, because its composition does not have conductivity, it cannot be used to fix the abrasive layer of the beveling wheel. The abrasive layer of the beveling wheel is subjected to electrical discharge guarding when the groove is formed, and the electrical discharge processing guarding material It is better to use the lower resistivity (resistivity). If the resistivity is 1 × 10 3ω.cm or more, it will generate heat and make processing difficult. Therefore, the resistivity is preferably 1 × 10%. Conductive adhesives generate heat during electrical discharge machining, so use It is not appropriate to fix the abrasive grain layer of the chamfering wheel. The problem to be solved by the present invention is to make the abrasive grains of the chamfering wheel. Layering, the adhesive used is conductive, and can be made of light metal or A metal disc core made of a light metal alloy is used as a metal disc core to reduce the weight of the chamfering wheel. [Means for solving the problem] The present invention is a chamfering wheel for processing the outer periphery of a silicon wafer. An abrasive grain layer forming one or more grooves is fixed on the outer peripheral part, and the metal disc core is an aluminum or aluminum alloy metal disc core, and the abrasive grain layer is made of a metal binder or a conductive resin. The binding agent is used as the abrasive particle layer of the binding agent, and the aforementioned abrasive particle layer adopts the Chinese National Standard (CNS) A4 specification (210X297) issued by the paper size containing metal powder. 6-
584585 A7 -------B7 一 _ 五、發明說明（4 ) 著劑固著於前述金屬盤心。 用以使磨粒層固著於金屬盤心之接著劑係使用含有適 量金屬粉末之接著劑，因此可使接著劑具有導電性，且可 確保電阻率為lx 102Q · cm以下之導電性，而此導電性係 適合在磨粒層固著於金屬盤心後用以形成磨粒層之溝而進 仃之放電加工者。又，藉由利用接著劑使磨粒層固著於金 屬盤心，則不必使用如習知之金屬盤心與一體化之複雜成 形模具，由於只要有磨粒層之模具就夠了，故可減低製造 成本。另，可採用以鋁製或鋁合金製之金屬盤心作為金屬 盤心’而·可使斜削輪輕量化。 前述接著劑宜為含有金屬粉末50〜80重量％之環氧樹 脂系接著劑，而金屬粉末則可使用鐵、鋁、銅、錫等之平 均粒徑為2〜50μπι之粉..末.藉由使環氧樹脂含有鐵、鋁、 銅、錫等之金屬粉末，可使接著劑具有導電性。在此，金 屬粉末之3含有量若小於5〇重量％，則接著劑之電阻率將大 ;X 10 Ω cm而無法取得放電加工可能之導電性，.若含· 有量超過80重量％，則接著能力降低，故含有#以前述範 圍為佳又，金屬粉末之平均粒徑若小於2㈣則金屬粉 末之製造成本會增高，若大於5〇μιη，則金屬粒子間之間 隔變寬而阻礙導電性，且電阻率將大於ΐχ i〇3Q .cm而於 放電加工時發熱。 上述斜削輪，可藉由以下製造方法來製造，其包含有： 使用U k以金屬結合劑或導電性樹脂結合劑作為結合 y之％狀之磨粒層之程序；藉由具有導電性之接著劑，將 本紙張尺度適用中國國轉584585 A7 ------- B7 I _ 5. Description of the invention (4) The adhesive is fixed on the core of the aforementioned metal plate. The adhesive used to fix the abrasive layer to the center of the metal plate uses an adhesive containing an appropriate amount of metal powder. Therefore, the adhesive can be made conductive and the electrical resistivity can be ensured to be less than 1x 102Q · cm. This conductive system is suitable for electrical discharge processing after the abrasive particle layer is fixed on the metal disc core to form grooves of the abrasive particle layer. In addition, by using an adhesive to fix the abrasive grain layer to the metal disc core, it is not necessary to use a conventional metal disc core and a complex forming mold integrated. Since a mold having an abrasive grain layer is sufficient, it can be reduced. manufacturing cost. In addition, a metal disk core made of aluminum or an aluminum alloy can be used as the metal disk core 'so that the weight of the oblique cutting wheel can be reduced. The aforementioned adhesive is preferably an epoxy-based adhesive containing 50 to 80% by weight of metal powder, and metal powder may be powder having an average particle diameter of 2 to 50 μm, such as iron, aluminum, copper, tin, etc. The epoxy resin contains metal powders such as iron, aluminum, copper, and tin to make the adhesive conductive. Here, if the content of the metal powder 3 is less than 50% by weight, the resistivity of the adhesive will be large; X 10 Ω cm, and the electrical conductivity that can be obtained by electrical discharge cannot be obtained. If the content exceeds 80% by weight, The adhesion ability is reduced, so it is better to contain # in the above range. If the average particle diameter of the metal powder is less than 2㈣, the manufacturing cost of the metal powder will increase. If it is larger than 50 μm, the interval between the metal particles will be widened and the conductivity will be hindered. And the resistivity will be greater than ΐχ 〇3Q.cm and heat is generated during electrical discharge machining. The above-mentioned beveling wheel can be manufactured by the following manufacturing method, which includes: a process of using U k with a metal binder or a conductive resin binder as a% abrasive grain layer bonded to y; Adhesive, apply this paper standard to China
584585 B7 五、發明說明（5 月,J述％狀之磨粒層固著於紹製或链合金製之金屬趣 周部之程序；及藉放電力α，使已.固著於 磨粒層上形成1條或複數條溝之程序。 螌心之 [發明之實施形態] 第1圖係顯示於本發明之實施形態中之斜削輪立 戴面圖。斜削輪(以下簡稱輪)10，係具有圓盤狀之：：分 心1及於該金屬盤心1之外周部固著附有溝之磨粒舞盤 者。金屬盤心1係鋁製，且外徑約2〇〇mm， 9 < π。丨4之厚产 約15mm者。磨粒層2係由鑽石磨粒及金屬結合劑所構成" 且藉由後述方法接著於金屬盤心1後，藉放電加工形成j 條溝3者。 ' 第2圖係顯示第1圖之輪之製造程序圖，第以昀圖係 顯示接著於金屬盤心前之磨粒層，第2(以圖係顯示磨粒層 欲接著於金屬盤心之接著程序，第2(c)圖係顯示磨粒層接 著於金屬盤心後，溝形成前之狀態。 如第2(a)圖所示之環狀磨粒層2a，係藉由與製作一般 之輪緣式之輪之磨粒層相同之製造方法製作而成者，即， 將由金屬粉所構成之金屬結合劑與鑽石磨粒之混合物充填 於預定之模具’於加壓、加熱狀態下燒成來製作。環狀磨 粒層2a之環之寬度約3mm，環之厚度約8mm。. 如第2(b)圖所示，金屬盤心1之外周部係一用以欲 環狀磨粒層2a之分割結構，其係分割成連接於金屬盤心 本體之本體部1 a與分割部lb。嵌入環狀磨粒層2a時， 割部lb與金屬盤心1本體分離，且於本體部1 a與分割部 心之外 入 分 (請先閱讀背面之注 意 I I ^^^^1 I I I I > 再填窝本頁- 訂， :線· 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公菠） 584585 A7584585 B7 V. Description of the invention (in May, the procedure for fixing the abrasive grain layer in the shape of% to a metal or peripheral alloy made of Shaoxing or a chain alloy; and the electric force α to fix the abrasive grain layer. A procedure for forming one or a plurality of grooves on the surface of the heart. [The embodiment of the invention] Figure 1 is a vertical face view of a beveling wheel shown in the embodiment of the present invention. The beveling wheel (hereinafter referred to as the wheel) 10 , Has a disc shape :: Distraction 1 and the abrasive disc with grooves fixed on the outer periphery of the metal disc core 1. The metal disc core 1 is made of aluminum and has an outer diameter of about 200mm , 9 < π. The thickness of 4 is about 15mm. The abrasive grain layer 2 is composed of diamond abrasive grains and a metal bonding agent, and is formed by electrical discharge processing after the metal disc core 1 is described later. There are three grooves. 'The second picture shows the manufacturing process chart of the wheel of the first picture, the second picture shows the abrasive layer next to the core of the metal disk, and the second (the picture shows the abrasive layer to be followed. At the procedure of the metal disc core, Fig. 2 (c) shows the state of the abrasive grain layer after the metal disc core, before the groove is formed. As shown in Fig. 2 (a), the annular abrasive grain layer 2a, It is produced by the same manufacturing method as that of the abrasive grain layer of a general rim-type wheel, that is, a predetermined mold is filled with a mixture of a metal binder composed of metal powder and diamond abrasive grains, and then pressed. 1. It is made by firing under heating. The width of the ring of the annular abrasive layer 2a is about 3mm, and the thickness of the ring is about 8mm .. As shown in Figure 2 (b), the outer periphery of the metal disc core 1 is used for The segmented structure of the annular abrasive grain layer 2a is divided into a body portion 1 a and a division portion lb connected to the metal disc core body. When the annular abrasive grain layer 2 a is embedded, the cutting portion lb is separated from the metal disc core 1 body. , And enter the points outside the main body 1 a and the division (please read the note on the back II ^^^^ 1 IIII > then fill in this page-order, line: This paper size applies to Chinese national standards ( CNS) A4 size (210X297 male spinner) 584585 A7
五、發明説明（6 ) lb之接觸面，及本體部la與分割部ib與環狀磨粒層^ 接觸之面塗布接㈣4(圖巾以斜㈣扑並於本體部la 之階部載置著環狀磨粒層2a之狀態下，使分割冑^緊貼 =本體部la’如第2(e)圖所示，形成環狀磨粒層&已固 著於金屬盤心1之外周部之狀態。 於第2⑻圖之程序中，在本實施形態中，使金屬盤心^ 之：周部之本體部la與分割部lb及環狀磨粒層2a接著之 接:劑4係使用含有6〇重量％之平均粒徑為·爪之銅粉 之壤氧系樹脂之接著劑。藉由使環氧系樹脂中含有鋼粉， 可使接著劑具有導電性，又，若使其含有5〇重量％之㈣ 為:ΟμΓΠ之銅粉時，電阻率大致為& 1〇2〇 . cm，含有的 重里％時，大致為1χ 102Ω ·⑽，含有8〇重量％時大致 為20Ω . cm。銅粉之含有量為4〇重量％時，電阻率大致 $ lx ι〇4ω · cm，銅粉之含有量小於5〇重量％時則無 .知到較1χ 1〇3ω · Cm為低之電阻率。 之後’藉放電加工於環狀磨粒層2a上形成如第丫圖 示之戴面形狀之溝3。#放電加工形㈣3之形成方法1 藉由與習知相同之方法來進行。於本實施形態中，係形成 如第1圖所示之形狀之溝3’然而，磨粒層及溝之形狀 然也可形成包含.前述第4圖所示之形狀之各種形狀。 表 4示於本貫加*形態中使用含有銅粉之環氧系梏 月曰接著劑及未含有銅粉之習知之接著劑之物性。 【表1】 法 所 可 當 (請先閲讀背面之注意再填窝本頁)♦ •裝丨 •、可— :線丨 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） -9- 584585V. Description of the invention (6) The contact surface of lb, and the contact surface of the main body la with the divided portion ib and the annular abrasive particle layer ^ are applied (the figure towel is slanted and placed on the step of the main body la With the annular abrasive particle layer 2a in contact, the division 胄 ^ is in close contact with the body portion la ', as shown in Fig. 2 (e). An annular abrasive particle layer is formed & is fixed to the outer periphery of the metal disc core 1. In the procedure of FIG. 2 (a), in this embodiment, the metal plate core is made ^: the body portion la of the peripheral portion is connected to the divided portion lb and the annular abrasive layer 2a: agent 4 is used Contains 60% by weight of an oxygen-based resin adhesive for copper powder with an average particle size of claws. By containing steel powder in an epoxy-based resin, the adhesive can be made electrically conductive. When 50% by weight of ㈣ is: 0μΓΠ copper powder, the specific resistance is approximately & 100.2 cm, and when it contains% by weight, it is approximately 1 × 102Ω · ⑽, and when it contains 80% by weight, it is approximately 20Ω. cm. When the content of copper powder is 40% by weight, the resistivity is approximately $ 1 × ω4ω · cm, and the content of copper powder is less than 50% by weight. 3ω · Cm is a low resistivity. After that, a groove 3 of a wearing surface shape as shown in the second figure is formed on the annular abrasive particle layer 2a by electric discharge machining. #Electrode Machining Form 3 Formation Method 1 The same method is performed. In this embodiment, the grooves 3 'having the shape shown in FIG. 1 are formed. However, the shape of the abrasive grain layer and the grooves may be formed. Various shapes. Table 4 shows the physical properties of the conventional epoxy adhesive containing copper powder and the conventional adhesive without copper powder in the form of the present additive. Read the note on the back and fill in this page again) ♦ • installation 丨 •, can —: line 丨 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -9- 584585
接著劑種類 彎曲強度Mpa 彎曲彈性係數Mpa 免多50%銅粉之接著劑 60 4χ 1〇「 含有60%銅粉之接著劑 55 4·5χ l〇J 含有80%銅粉之接著劑 45 6χ 1〇ό 未含有銅粉之接著劑 70 2χ 1〇ό 丰又性地降低’然而，實用上係以如表2所示之接著強度較 為重要，在此係作為參考物性值。關於彎曲彈性.係數，若 增加銅粉末之添加量，則彆曲彈性係數增高，而使可承受 磨粒層之剛性提高，且矽晶圓加工時之切削力提高，以有 效減少不良原因之碎屑等。 表2·顯示藉由於本實施形態中所使用之含有銅粉之環 氧系樹脂接著劑接著金屬盤心與代表性之磨粒層.（銅、錫系 之金屬結合劑）時，測定其間之接著強度之結果。 【表2】 金屬盤心材質 金屬結合劑組成 接著強度Mpa 2種紹鎿件 銅：錫 80 : 20 25 〜45 — 碳鋼（S45C) 厂銅：錫 80 : 20 r 30〜50 ^ ^ ^ w rm w ^ m ^ ^ 金屬結合劑磨粒層接著於2種鋁鑄件之金屬盤心時之接著 強度為25〜45MPa，與碳鋼（S45C)金屬盤心之情形相比較 雖略為降低，然而，以輪形狀進行旋轉試驗之結果，即使 以通吊使用之周速之3倍周速使其旋轉，亦無產生任何問 題，故可確認其於實用上係具有足夠之接著強度者。 [試驗例] 使用前述實施形態之輪（發明品）與將金屬結合劑磨粒 層直接固著於S45C金屬盤心之輪(習知品)，進行矽晶圓之 (請先閲讀背面之注意^^再填窝本頁)， •裝丨Type of adhesive Flexural strength Mpa Flexural modulus of elasticity Mpa Free 50% copper powder adhesive 60 4χ 1〇 "Adhesive containing 60% copper powder 55 4 · 5χ l0J Adhesive containing 80% copper powder 45 6χ 1 〇ό Adhesive that does not contain copper powder 70 2χ 1〇ό It is reduced in a large amount 'However, it is more important to use the bonding strength shown in Table 2 in practice, which is used as a reference physical property value. Regarding bending elasticity. Coefficient If the added amount of copper powder is increased, the specific elasticity coefficient will be increased, so that the rigidity of the abrasive grain layer can be increased, and the cutting force during silicon wafer processing will be increased to effectively reduce the debris and other reasons. Table 2 · It is shown that the epoxy resin adhesive containing copper powder used in this embodiment is used to bond the metal plate core and the representative abrasive grain layer. (Copper and tin-based metal bonding agents), the adhesion strength is measured between them. The results are shown in [Table 2] Metal disc core material, metal bond composition, bonding strength, Mpa, 2 types of copper: tin 80: 20, 25 ~ 45 — carbon steel (S45C), factory copper: tin, 80: 20r, 30 ~ 50 ^ ^ ^ w rm w ^ m ^ ^ metal bond abrasive grains The bonding strength at the time of the metal core of two kinds of aluminum castings is 25 to 45 MPa, which is slightly lower than that of the carbon steel (S45C) metal core. However, the result of the rotation test in the shape of a wheel, even if it is suspended. The rotating speed of 3 times of the used speed makes it rotate without any problems, so it can be confirmed that it has sufficient bonding strength in practice. [Test Example] The wheel (invented product) and The metal bond abrasive grain layer is directly fixed to the S45C metal disk core wheel (conventional product), and the silicon wafer is used (please read the note on the back ^^ before filling the nest page).
τ丨訂I 本紙張尺度適用中國國家標準（) A4規格（210X297公菠） -10- ^«4585 A7τ 丨 Order I This paper size applies to Chinese national standard (A4 size (210X297 male spin) -10- ^ 4585 A7
五、發明説明（8 ) 加工試驗。 力口工條件 輪分類：SD600N125MM60 輪尺寸：2O20x2Otx3Oh 輪周速：1800m/min 加工餘量：約0.4mm 被加工材料：1500石夕晶圓 試驗結果顯示於表3。 【表3】 _ --3_ 金脣盤心材質 總加工片數 瑕疵率％ 明品 鋁合金（A2017) 10000 1.0 知品 碳鋼（S45C) 8500 .1.5 ~ 發明品之輪，由於藉由含有銅粉末之高彈性係數之接 著劑使磨粒層固著於金屬盤心，故可承受磨粒層之剛性 向’且矽晶圓加工時之切削力提高，以減少不良原因之碎 屑等，且瑕疵率較習知品減少50%。 [發明之效果] 藉由使用含有適量金屬粉末之接著劑而將磨粒層固著 於链製或鋁合金製之金屬盤心，且該磨粒層係使用金屬結 合劑或導電性樹脂結合劑作為結合劑者，藉此，可確保適 用於在磨粒層固著於金屬盤心後用以形成磨粒層之溝而進 行之放電加工之導電性，同時更可達成輕量化。又，由於 不必使用如習知之金屬盤心與一體化之複雜成形模具，只 要有磨粒層之模具就夠了，故可降低製造成本。 [圖式之簡單說明] 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） -11 · (請先閲讀背面之注 I I I 比 丨 I I I I 再填寫本頁)， Γ5. Description of the invention (8) Processing test. Working conditions of wheel: Wheel classification: SD600N125MM60 Wheel size: 2O20x2Otx3Oh Wheel peripheral speed: 1800m / min Machining allowance: about 0.4mm Processed material: 1500 Shixi wafer The test results are shown in Table 3. [Table 3] _ --3_ Defect ratio of total processed pieces of gold lip disc core material% Mingming aluminum alloy (A2017) 10000 1.0 Zhipin carbon steel (S45C) 8500 .1.5 ~ Inventive wheel, because it contains copper The powder's high elasticity coefficient adhesive fixes the abrasive grain layer to the core of the metal disk, so it can withstand the rigidity of the abrasive grain layer, and the cutting force during silicon wafer processing is increased to reduce defective debris, etc., and The defect rate is reduced by 50% compared with conventional products. [Effects of the Invention] The abrasive grain layer is fixed to a metal core made of a chain or an aluminum alloy by using an adhesive containing an appropriate amount of metal powder, and the abrasive grain layer uses a metal binder or a conductive resin binder As a binder, it can ensure the conductivity suitable for electrical discharge processing for forming grooves of the abrasive grain layer after the abrasive grain layer is fixed on the metal disk core, and at the same time, it can achieve weight reduction. In addition, since it is not necessary to use a complicated forming mold such as a conventional metal disk core and integration, only a mold having an abrasive grain layer is sufficient, so that the manufacturing cost can be reduced. [Brief description of the drawings] This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -11 · (Please read the note on the back I I I ratio 丨 I I I I before filling this page), Γ
-5U Γ 584585 五、發明説明（9 ) 第1圖係、顯示本發明之實施形態中之斜削輪之部分 面圖。 刀戳 第2圖係顯不第1圖之斜削輪之製造程.序圖。 第3(a) —（b)圖係顯示斜削輪之全體形狀例之圖。 第4(a) (c)圖係顯示斜削輪磨粒層之溝之形態之例子 之圖 第5(a) — (b)圖係顯示藉斜削輪之研磨加工 之例子之 圖 [元件標號對照] 1.. .金屬盤心 la. ..本體部 lb. ..分割部 2…磨粒層 2 a…環狀磨粒層 3…溝 4.. .接著劑 10.. .斜削輪 100···輪 101…金屬盤心 10 2...磨粒層 103a，103b，103c，103d···溝 2 0 0 · · ·晶 0 300…真空吸盤 (請先閲讀背面之注意再填窝本頁》 .裝丨 .訂— •線丨 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 12--5U Γ 584585 V. Description of the invention (9) The first diagram is a partial plan view showing a chamfering wheel in an embodiment of the present invention. Knife stamp Figure 2 shows the manufacturing process and sequence diagram of the chamfering wheel shown in Figure 1. Figures 3 (a)-(b) are diagrams showing examples of the overall shape of the chamfering wheel. Fig. 4 (a) (c) is a diagram showing an example of the shape of the groove of the abrasive layer of the beveling wheel. Fig. 5 (a)-(b) is a diagram showing an example of the grinding process by the beveling wheel. [Element [Labeling comparison] 1 ... metal disc core la .... body part lb ... division 2 ... abrasive layer 2a ... annular abrasive layer 3 ... groove 4 .... adhesive 10 .. Wheel 100 ... Wheel 101 ... Metal disc core 10 2 ... Abrasive layer 103a, 103b, 103c, 103d ... Groove 2 0 0 · · Crystal 0 300 ... Vacuum chuck Filling this page ". Assembling 丨. Ordering — • Line 丨 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 12-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001031366A JP3434801B2 (en) | 2001-02-07 | 2001-02-07 | Method for manufacturing beveling wheel for processing peripheral portion of silicon wafer |
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| TW584585B true TW584585B (en) | 2004-04-21 |
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| TW090133373A TW584585B (en) | 2001-02-07 | 2001-12-31 | Beveling wheel for processing silicon wafer outer periphery and the manufacture method thereof |
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| JP (1) | JP3434801B2 (en) |
| KR (1) | KR100628018B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382894B (en) * | 2004-12-28 | 2013-01-21 | Shinetsu Handotai Kk | Silicon wafer grinding method and manufacturing method and disc-like work piece grinding device, and silicon wafer |
| TWI807870B (en) * | 2021-06-24 | 2023-07-01 | 片山一郎 | Workpiece processing device, whetstone, and workpiece processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MXPA03006434A (en) * | 2003-07-18 | 2005-01-21 | Univ Mexico Nacional Autonoma | Hydrodynamic radial flux tool for polishing and grinding optical and semiconductor surfaces. |
| KR102396166B1 (en) * | 2015-10-05 | 2022-05-11 | 이화다이아몬드공업 주식회사 | Edge wheel for edge grinding of substrate having passage of cooling water and method of manufacturing the wheel |
| KR101920901B1 (en) * | 2017-07-24 | 2018-11-22 | 이화다이아몬드공업 주식회사 | Edging wheel using grinding block and method of manufacturing the wheel |
-
2001
- 2001-02-07 JP JP2001031366A patent/JP3434801B2/en not_active Expired - Fee Related
- 2001-12-31 TW TW090133373A patent/TW584585B/en not_active IP Right Cessation
-
2002
- 2002-01-25 KR KR1020020004463A patent/KR100628018B1/en active IP Right Grant
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382894B (en) * | 2004-12-28 | 2013-01-21 | Shinetsu Handotai Kk | Silicon wafer grinding method and manufacturing method and disc-like work piece grinding device, and silicon wafer |
| TWI807870B (en) * | 2021-06-24 | 2023-07-01 | 片山一郎 | Workpiece processing device, whetstone, and workpiece processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002239912A (en) | 2002-08-28 |
| JP3434801B2 (en) | 2003-08-11 |
| KR100628018B1 (en) | 2006-09-26 |
| KR20020065838A (en) | 2002-08-14 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |