CN102589951A - Simple preparation method for metallographic phase sample of silicon wafer - Google Patents
Simple preparation method for metallographic phase sample of silicon wafer Download PDFInfo
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- CN102589951A CN102589951A CN2012100645977A CN201210064597A CN102589951A CN 102589951 A CN102589951 A CN 102589951A CN 2012100645977 A CN2012100645977 A CN 2012100645977A CN 201210064597 A CN201210064597 A CN 201210064597A CN 102589951 A CN102589951 A CN 102589951A
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Abstract
The invention disclosers a simple preparation method for a metallographic phase sample of a silicon wafer. A flat cylinder is used as a carrier plate of the silicon wafer, and the method comprises the following steps of: placing a hot melt adhesive on the carrier plate, and heating the carrier plate until the hot melt adhesive is molten; flatly placing the silicon wafer in the middle of the carrier plate and covering on the hot melt adhesive, and applying force to the silicon wafer by using the other flat pressing block; cooling the carrier plate to room temperature to ensure that the hot melt adhesive is cured; polishing the prepared sample; after polishing, heating the carrier plate again to ensure that the cured hot melt adhesive is molten, allowing the silicon wafer to fall off and taking down the silicon wafer; and washing the silicon wafer to finish the metallographic phase sampling of an ultra thin silicon wafer. The process is simple, and is convenient to operate, and low in implement cost; and the prepared thin silicon wafer sample is not warped or crushed, and is stable during polishing; the key point is that after processing, the silicon wafer can be conveniently taken out, the omnibearing observation of the microstructure of the ultra thin silicon wafer can be realized, the specific area can be selected conveniently for component or structure analysis, and in-situ multi-angle and multi-means representation and detection of the specific area of the silicon wafer can be performed.
Description
Technical field
Patent of the present invention relates to semiconductor and photovoltaic production technology and research field, relates in particular to a kind of simple and easy metallographic sample preparation method based on ultra-thin frangible silicon sheet material.
Background technology
The silicon wafer thickness that is used for solar level at present is generally less than 250 μ m, and fragility is easy to be broken, when doing microscope, surface sweeping electron microscopic sample, must inlay appearance.The preparation of traditional metallographic sample mainly contains two kinds of hot edge method and cold edge methods; For ultra thin silicon wafers, the heating of hot edge method, pressure process are prone to cause the fragmentation of sample, and cold edge method is long set time; Cost is high; Cold edge agent is shunk and is prone to cause the silicon chip internal stress excessive, the warpage of thin silicon sheet occurs, situation such as fragmentation.Simultaneously, hot edge method and the cold edge method shortcoming that all exists silicon chip sample to take out.The wax paster technique of being taked in the semicon industry that has can be realized the carrier sheet in the silicon wafer polishing technology, and the polishing back adopts scoop with its shovel down, but for the thin silicon sheet, certainly will will cause breaking of sample in this process.Therefore, need the new method for making sample of research,, shorten sample preparation time and sample preparation cost, accomplish that simultaneously prepared sample is convenient to taking-up guaranteeing that made sample has under the prerequisite of good grinding and polishing effect.
Summary of the invention
Technical matters to be solved by this invention; Provide a kind of simple method for preparing of silicon chip metallographic sample; This method can effectively solve because silicon warp, the fragmentation that hot edge method and cold edge method fast contraction cause, and set time is long, problems such as cost height; Also solve simultaneously hot edge method and the prepared sample of cold edge method and can't complete taking-up approach sample, carried out the problem of a series of subsequent experimental.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is following:
A kind of simple method for preparing of silicon chip metallographic sample, it comprises the steps:
(1) chooses the support plate of smooth cylinder as silicon chip;
(2) hot melt adhesive is placed the support plate upper surface, heating support plate to hot melt adhesive melts;
(3) silicon chip is lain in the support plate upper surface and be covered on the hot melt adhesive, apply pressure on the silicon chip with another smooth briquetting;
(4) the cooling support plate solidifies hot melt adhesive to room temperature;
(5) sample that step (4) is prepared carries out polishing;
(6) after the polishing, reheat support plate and make solid melten gel fusing, silicon chip comes off and takes off;
(7) cleaning silicon chip, the metallographic sample preparation of completion ultra thin silicon wafers.
Wherein, described silicon wafer thickness is below 250 μ m.
In the step (1), described cylinder material is stainless steel, wimet or pottery.
In step (2) and the step (6), the heating-up temperature of support plate is 70～100 ℃.
In the step (3), the quality of briquetting is 50～100g.
In the step (7), the method for cleaning silicon chip is this area conventional method, and purpose is to remove organic contamination and metal contamination.
Beneficial effect: the inventive method technology is simple, and is easy to operate, and implementation cost is low; The thin silicon sheet sample of preparation is not warpage, nothing fragmentation in the grinding and polishing process; Performance is stable, and more crucial is to machine the back silicon chip can conveniently take out, and has realized the microstructural comprehensive observation of ultra thin silicon wafers; And can conveniently choose the specific region and carry out, and then do the original position multi-angle of silicon chip specific region, many means sign and detection such as composition or structure analysis.
Description of drawings
Figure 1A is support plate, sample, briquetting synoptic diagram.
Figure 1B is the side schematic view of support plate, sample, briquetting.
Fig. 2 is the sample pictures of band support plate.
Fig. 3 is the optical microscope picture (50x) of prepared sample metallographic.
Among the above-mentioned figure, briquetting 1, silicon chip 2, support plate 3, hot melt adhesive 4.
Embodiment
According to following embodiment, can understand the present invention better.Yet, those skilled in the art will readily understand that the described content of embodiment only is used to explain the present invention, and the present invention that should also can not limit in claims to be described in detail.
Embodiment 1:
A kind of simple method for preparing of silicon chip metallographic sample, it comprises the steps:
(1) chooses smooth stainless steel, wimet or ceramic cylinder (diameter 40mm, high 10mm) support plate as silicon chip;
(2) the solid state heat melten gel is placed the support plate upper surface, consumption 0.3～0.5g, consumption is lived silicon chip with enough adhesions and is as the criterion, and heating support plate to hot melt adhesive is fused into liquid thin layer (according to the characteristic of hot melt adhesive, generally be heated to 70～100 ℃, about 2min can melt);
(3) treat hot melt adhesive fusing after; Silicon chip (thickness 250 μ m below) is lain in the support plate upper surface and is covered on the hot melt adhesive; (general weight is 50～100g) to apply pressure to evenly that thin silicon sheet and support plate upper surface to be fitted on the silicon chip tight, effectively bonding (shown in Figure 1B) of realization thin silicon sheet and smooth support plate with another smooth briquetting;
(4) the cooling support plate solidifies hot melt adhesive to room temperature;
(5) sample that step (4) is prepared carries out grinding and polishing on automatic grinding and polishing machine (U.S.'s mark is happy, and Ecomet 250) handles;
(6) after the polishing, reheat support plate and make solid melten gel fusing (according to the characteristic of hot melt adhesive, generally be heated to 70～100 ℃, about 2min can melt), silicon chip comes off and takes off;
(7) through SC1, SC2 ultrasonic cleaning silicon chip, can adopt means such as preferential etch to carry out defective after the drying and observe, accomplish the metallographic sample preparation of ultra thin silicon wafers.
Optical microscope picture through Fig. 3 silicon chip metallographic can be found out, uses the made sample effect of the present invention very good.
Claims (5)
1. the simple method for preparing of a silicon chip metallographic sample is characterized in that, it comprises the steps:
(1) chooses the support plate of smooth cylinder as silicon chip;
(2) hot melt adhesive is placed the support plate upper surface, heating support plate to hot melt adhesive melts;
(3) silicon chip is lain in the support plate upper surface and be covered on the hot melt adhesive, apply pressure on the silicon chip with another smooth briquetting;
(4) the cooling support plate solidifies hot melt adhesive to room temperature;
(5) sample that step (4) is prepared carries out polishing;
(6) after the polishing, reheat support plate and make solid melten gel fusing, silicon chip comes off and takes off;
(7) cleaning silicon chip, the metallographic sample preparation of completion ultra thin silicon wafers.
2. the simple method for preparing of silicon chip metallographic sample according to claim 1 is characterized in that, described silicon wafer thickness is below 250 μ m.
3. the simple method for preparing of silicon chip metallographic sample according to claim 1 is characterized in that, in the step (1), described cylinder material is stainless steel, wimet or pottery.
4. the simple method for preparing of silicon chip metallographic sample according to claim 1 is characterized in that, in step (2) and the step (6), the heating-up temperature of support plate is 70～100 ℃.
5. the simple method for preparing of silicon chip metallographic sample according to claim 1 is characterized in that, in the step (3), the quality of briquetting is 50～100g.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100645977A CN102589951A (en) | 2012-03-12 | 2012-03-12 | Simple preparation method for metallographic phase sample of silicon wafer |
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| CN2012100645977A CN102589951A (en) | 2012-03-12 | 2012-03-12 | Simple preparation method for metallographic phase sample of silicon wafer |
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| CN102589951A true CN102589951A (en) | 2012-07-18 |
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| CN2012100645977A Pending CN102589951A (en) | 2012-03-12 | 2012-03-12 | Simple preparation method for metallographic phase sample of silicon wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103335877A (en) * | 2013-06-24 | 2013-10-02 | 北京工业大学 | Method for preparing metal thin film metallographic structure sample |
| CN105928462A (en) * | 2016-07-08 | 2016-09-07 | 晶科能源有限公司 | Method for measuring thickness of photovoltaic solar energy material |
| CN106370489A (en) * | 2016-08-24 | 2017-02-01 | 江西稀有稀土金属钨业集团有限公司 | Sample production method used for hard alloy metallographic detection |
| CN108387432A (en) * | 2018-01-29 | 2018-08-10 | 国电锅炉压力容器检验中心 | Jumper bar preparation method of sample |
| CN113199397A (en) * | 2021-05-18 | 2021-08-03 | 南通大学 | Gallium nitride single crystal wafer fixing device and polishing method |
-
2012
- 2012-03-12 CN CN2012100645977A patent/CN102589951A/en active Pending
Non-Patent Citations (2)
| Title |
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| 唐雷钧 等: "集成电路TEM分析的制样技术", 《电子显微学报》 * |
| 田业冰: "大尺寸硅片磨削平整化理论与工艺技术的研究", 《中国博士学位论文全文数据库》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103335877A (en) * | 2013-06-24 | 2013-10-02 | 北京工业大学 | Method for preparing metal thin film metallographic structure sample |
| CN103335877B (en) * | 2013-06-24 | 2016-04-06 | 北京工业大学 | A kind of method preparing metal thin film metallographic structure sample |
| CN105928462A (en) * | 2016-07-08 | 2016-09-07 | 晶科能源有限公司 | Method for measuring thickness of photovoltaic solar energy material |
| CN106370489A (en) * | 2016-08-24 | 2017-02-01 | 江西稀有稀土金属钨业集团有限公司 | Sample production method used for hard alloy metallographic detection |
| CN106370489B (en) * | 2016-08-24 | 2019-04-12 | 江西江钨硬质合金有限公司 | The method for making sample of hard alloy metallographic detection |
| CN108387432A (en) * | 2018-01-29 | 2018-08-10 | 国电锅炉压力容器检验中心 | Jumper bar preparation method of sample |
| CN113199397A (en) * | 2021-05-18 | 2021-08-03 | 南通大学 | Gallium nitride single crystal wafer fixing device and polishing method |
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Application publication date: 20120718 |