CN115106914A - Sticking polishing process of monocrystalline thin silicon wafer - Google Patents
Sticking polishing process of monocrystalline thin silicon wafer Download PDFInfo
- Publication number
- CN115106914A CN115106914A CN202210578251.2A CN202210578251A CN115106914A CN 115106914 A CN115106914 A CN 115106914A CN 202210578251 A CN202210578251 A CN 202210578251A CN 115106914 A CN115106914 A CN 115106914A
- Authority
- CN
- China
- Prior art keywords
- paraffin
- beeswax
- rosin
- silicon wafer
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000007517 polishing process Methods 0.000 title claims abstract description 18
- 239000012188 paraffin wax Substances 0.000 claims abstract description 120
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 239000000203 mixture Substances 0.000 claims abstract description 60
- 235000013871 bee wax Nutrition 0.000 claims abstract description 59
- 239000012166 beeswax Substances 0.000 claims abstract description 59
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims abstract description 44
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims abstract description 44
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 19
- 238000002156 mixing Methods 0.000 claims abstract description 14
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 230000006835 compression Effects 0.000 claims description 9
- 238000007906 compression Methods 0.000 claims description 9
- 238000012669 compression test Methods 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000010419 fine particle Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 239000007766 cera flava Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 238000010309 melting process Methods 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000002918 waste heat Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 abstract description 14
- 238000012545 processing Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 49
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J191/00—Adhesives based on oils, fats or waxes; Adhesives based on derivatives thereof
- C09J191/06—Waxes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a sticking and polishing process of a monocrystalline thin silicon wafer, belonging to the field of silicon wafer processing, and the sticking and polishing process of the monocrystalline thin silicon wafer comprises the following steps: s1: crushing paraffin, beeswax and rosin; s2: selecting a mixing container, and putting into the mixing container according to a specified proportion; s3: heating the container, stirring for dissolving, then cooling and measuring data; s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate; s5: the heating of the light plate is stopped, the silicon wafer is placed before the paraffin mixture is cooled, conventional paraffin is crushed into particles, the diameter of the paraffin crushed into particles is smaller than 10mm, the particle paraffin with the diameter smaller than 10mm accounts for 80% of the whole body, the silicon wafer is stably pasted, the polished surface of the silicon wafer can be completely exposed, polishing treatment is facilitated, and the problems that the conventional silicon wafer is not convenient to fix and the like are solved.
Description
Technical Field
The invention relates to the field of silicon wafer processing, in particular to a sticking polishing process of a monocrystalline thin silicon wafer.
Background
The silicon chip is a milestone in the field of modern microelectronic technology, and the progress in the aspects of aviation, industry, agriculture, national defense and the like can be greatly improved through the microelectronic technology; the thickness of a silicon wafer during general processing is small, and the thickness of part of the silicon wafer is several millimeters or even less than one millimeter, so that clamping processing is difficult to perform during polishing.
At present, when a thin monocrystalline silicon piece is polished, part of equipment is fixed in an adsorption mode or fixed by using a clamping jaw, and although a fixing effect can be achieved, the following problems can exist in the polishing process:
1. if adsorption type fixing is adopted, once foreign matters remain on a supporting workbench, the silicon wafer cannot be positioned on the same horizontal plane, the phenomena of excessive local polishing, insufficient local polishing and the like of the silicon wafer can occur in the polishing process, the overall quality of the silicon wafer is influenced, and if airflow adsorption is adopted, the silicon wafer is sunken due to the fact that the silicon wafer is weak and airflow is too large, the silicon wafer can shake or even fall off due to too small airflow and the like;
2. if the clamping jaw type fixing is adopted, the phenomena that local polishing is not in place and the like can occur at the edge of the silicon wafer, the silicon wafer cannot be completely exposed for polishing, the clamping jaw can also influence the operation of polishing equipment, even damage the polishing equipment, and the application in practice is not facilitated.
In view of the above problems, we propose a process for paste polishing of a single crystal thin silicon wafer.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a sticking and polishing process of a monocrystalline thin silicon wafer, which can realize stable sticking treatment on the silicon wafer, so that the polished surface of the silicon wafer can be completely exposed, and the polishing treatment is convenient, thereby solving the problems of inconvenient fixation of the traditional silicon wafer and the like.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A sticking polishing process of a monocrystalline silicon wafer comprises the following steps:
s1: crushing paraffin, beeswax and rosin;
s2: selecting a mixing container, and mixing according to a specified proportion;
s3: heating the container, stirring for dissolving, then cooling and measuring data;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the heating of the plate was stopped and the wafer was placed before the paraffin mixture was cooled.
Further, the crushing method of the paraffin, the beeswax and the rosin in the S1 comprises the following steps:
a1: crushing conventional paraffin into granules, wherein the diameter of the crushed granular paraffin is less than 10mm, and the granular paraffin with the diameter less than 10mm accounts for 80% of the total;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the crushed beeswax into fine particles is less than 5mm, and the beeswax with the diameter less than 5mm accounts for 90% of the total weight;
a3: the blocky rosin is crushed into powder and is stored by using a sealed container.
Further, a 314 stainless steel heating tank is adopted as the mixing container in the S2, and a funnel-shaped discharge pipe is arranged at the bottom of the 314 stainless steel heating tank;
beeswax is firstly put into a 314 stainless steel heating tank, and the added beeswax accounts for one fifth of the capacity of the heating tank.
Further, the method for heating, dissolving and cooling the raw material in S3 includes the steps of:
b1: preheating the heating tank for 2min to 50-60 deg.C, and slowly melting Cera flava during preheating process;
b2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, the heating tank is continuously heated at the moment, the heat preservation is kept between 110 and 130 ℃, and the interior of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, and fully fusing the paraffin with the beeswax in the melting process, wherein the paraffin accounts for four fifths of the volume of the heating tank;
b4: and finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, discharging the mixture into a mold, and naturally cooling and solidifying the mixture.
Further, the adding proportion of the paraffin, the beeswax and the rosin is determined according to the thickness of the single chip, and the proportioning method comprises the following steps:
if the thickness of the single wafer is less than 1mm (and including 1mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.5: 0.6;
if the thickness of the single wafer is more than 1-3mm (and including 3mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.2: 0.8;
if the thickness of the single chip is more than 3-5mm (and more than 5 mm), the ratio of the paraffin wax, the beeswax and the rosin is 1: 1: 0.5.
further, the heating of the optical plate and the wiping of the cooled paraffin mixture to the optical plate in S4 includes the following steps:
c1: selecting a light plate with the surface roughness of Ra1.6, and having unlimited thickness and size larger than that of the single crystal wafer.
C2: heating the light plate for 1min to make the surface temperature reach 70-85 deg.C;
c3: taking a solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of a light plate, melting the paraffin mixture by using heat on the light plate to uniformly coat the paraffin mixture on the light plate, and keeping the paraffin mixture in a liquid state by using waste heat of the light plate.
Further, in S5, after the paraffin mixture is uniformly wiped, heating the optical plate is stopped, the single crystal wafer is placed on the optical plate while the paraffin mixture is kept in a liquid state, and as the surface temperature of the optical plate decreases, the paraffin mixture is slowly cooled and solidified, and the single crystal wafer is placed on the optical plate and is tightly attached to the optical plate;
finally, the light plate can be fixed on a machine tool, parameters of the machine tool are corrected, and the single wafer is processed.
Further, the data determination in S3 includes:
(1) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1.5: strength measurement at 0.6: placing the extracted part of the paraffin mixture liquid in the proportion in a mould, isolating water for 10min, cooling and solidifying, placing under a press, setting the pressure of the press to be 20MPa, 30MPa and 35MPa respectively, carrying out a compression test, and recording compression numerical values;
(2) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1.2: intensity measurement at 0.8: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 25MPa, 30MPa and 40MPa respectively, carrying out compression test, and recording compression numerical values;
(3) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1: intensity measurement at 0.5: placing the extracted part of the paraffin mixture liquid in the proportion in a mould, isolating water for 10min, cooling and solidifying, placing under a press, setting the pressure of the press to 35MPa, 40MPa and 50MPa respectively, performing a compression test, and recording compression numerical values;
3. advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) the silicon wafer polishing device can conveniently and stably fix the silicon wafer to be polished on the light plate, and then the light plate is used as a fixing medium to be connected to a proper position of a machine tool, so that the polished surface of the silicon wafer is completely exposed, and the silicon wafer is conveniently polished.
(2) According to the invention, paraffin, beeswax and rosin are used as pasting media, and through multiple tests and data determination, the silicon wafers with different thicknesses can be proportioned, and paraffin mixtures with different hardness are selected for the silicon wafers with different thicknesses to be pasted.
(3) The paraffin, the beeswax and the rosin adopted by the invention are used as main connecting media, the raw materials are rich, the cost is low, the proportion is simple, the stable fixing operation of the silicon wafer can be realized by using a small amount of paraffin mixture, and the practical value of the silicon wafer is increased.
Drawings
FIG. 1 is a histogram of the material ratios of paraffin wax, beeswax and rosin.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
Example 1:
a sticking polishing process of a monocrystalline silicon wafer comprises the following steps:
s1: crushing paraffin, beeswax and rosin;
s2: selecting a mixing container, and putting into the mixing container according to a specified proportion;
s3: heating the container, stirring for dissolving, then cooling and measuring data;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the plate was stopped and the wafer was placed before the paraffin mixture was cooled.
In this embodiment, can be with the convenient stable fixing of the silicon chip that needs the polishing on the worn-out fur, reuse worn-out fur as fixed medium and connect on the suitable position of lathe for the silicon chip polished surface exposes completely, thereby is convenient for carry out polishing treatment to the silicon chip.
The crushing method of the paraffin, the beeswax and the rosin in the S1 comprises the following steps:
a1: crushing conventional paraffin into granules, wherein the diameter of the crushed granular paraffin is less than 10mm, and the granular paraffin with the diameter less than 10mm accounts for 80% of the total mass;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the crushed beeswax into fine particles is less than 5mm, and the beeswax with the diameter less than 5mm accounts for 90% of the total weight;
a3: the blocky rosin is crushed into powder and is stored by using a sealed container.
Wherein, the mixing container in the S2 adopts a 314 stainless steel heating tank, and a funnel-shaped discharge pipe is arranged at the bottom of the 314 stainless steel heating tank;
beeswax is firstly put into a 314 stainless steel heating tank, and the added beeswax accounts for one fifth of the capacity of the heating tank.
Wherein, the method for heating, dissolving and cooling the raw material in S3 comprises the following steps:
b1: preheating the heating tank for 2min to 50-60 deg.C, and slowly melting Cera flava during preheating process;
b2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, the heating tank is continuously heated at the moment, the heat preservation is kept between 110 and 130 ℃, and the interior of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, and fully fusing the paraffin with the beeswax in the melting process, wherein the paraffin accounts for four fifths of the volume of the heating tank;
b4: and finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, discharging the mixture into a mold, and naturally cooling and solidifying the mixture.
In the embodiment, the beeswax is added into the paraffin according to the specified proportion, so that the toughness of the mixed paraffin can be effectively improved, and the dissolved paraffin mixture is soft in texture, but the hardness of the paraffin cannot be improved, and the phenomena of cracking and the like cannot occur;
the rosin is added into the paraffin according to a specified proportion, so that the hardness of the paraffin can be increased, but the toughness of the paraffin cannot be improved, and the toughness of the paraffin and the hardness of the paraffin can be improved by combining the rosin and the beeswax, so that the comprehensive performance of the paraffin is better.
Wherein, the putting proportion of the paraffin, the beeswax and the rosin is determined according to the thickness of the single chip, and the proportioning method is as follows:
if the thickness of the single wafer is less than 1mm (and including 1mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.5: 0.6;
if the thickness of the single chip is more than 1-3mm (including 3mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.2: 0.8;
if the thickness of the single chip is more than 3-5mm (and more than 5 mm), the ratio of the paraffin wax, the beeswax and the rosin is 1: 1: 0.5.
and the paraffin mixture adopted by the silicon wafers with different thicknesses has different quality, and when the silicon wafers are thicker, the paraffin mixture adopted is sealed to be larger, the hardness is stronger, so that the silicon wafers are tightly attached to the light plate, the phenomena of shaking and dislocation are reduced, and the use stability of the silicon wafers is improved.
In the embodiment, paraffin, beeswax and rosin are used as pasting media, and after a plurality of tests and data determination, the silicon wafers with different thicknesses can be proportioned, and paraffin mixtures with different hardness are selected for pasting aiming at the silicon wafers with different thicknesses.
Wherein, the heating of the optical plate in S4 and the wiping of the optical plate by the cooled paraffin mixture comprise the following steps:
c1: selecting a light plate with the surface roughness of Ra1.6, and having unlimited thickness and size larger than that of the single crystal wafer.
C2: heating the light plate for 1min to make the surface temperature reach 70-85 deg.C;
c3: taking a solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of a light plate, melting the paraffin mixture by using heat on the light plate to uniformly coat the paraffin mixture on the light plate, and keeping the paraffin mixture in a liquid state by using the waste heat of the light plate.
In S5, after the paraffin mixture is wiped uniformly, the heating of the light plate is stopped, the single crystal wafer is placed on the light plate under the condition that the paraffin mixture keeps a liquid state, the paraffin mixture is slowly cooled and solidified along with the reduction of the surface temperature of the light plate, and the single crystal wafer is placed on the light plate and is tightly attached to the light plate;
finally, the light plate can be fixed on a machine tool, parameters of the machine tool are corrected, and the single chip is processed.
In this embodiment, the paraffin, beeswax and rosin that adopt are as main connecting medium, and its raw materials are abundant, low cost, and the ratio is simple, utilizes a small amount of paraffin mixture can realize the stable fixed operation to the silicon chip, increases its practical value.
Example 2:
in conjunction with the above example 1, the data measurement in S3 is supplemented by:
the data determination in S3 includes:
(1) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1.5: strength measurement at 0.6: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 20MPa, 30MPa and 35MPa respectively, carrying out compression test, and recording compression numerical values;
(2) in the condition that the ratio of paraffin, beeswax and rosin is 1: 1.2: intensity measurement at 0.8: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 25MPa, 30MPa and 40MPa respectively, carrying out compression test, and recording compression numerical values;
(3) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1: intensity measurement at 0.5: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 35MPa, 40MPa and 50MPa respectively, carrying out compression test, and recording compression numerical values;
in the embodiment, data determination is performed on paraffin mixtures with different proportions, so that the paraffin mixtures have sufficient strength when being adhered to silicon wafers, the overall quality of the paraffin mixtures and the smoothness of the silicon wafers during polishing are ensured, and the probability of processing faults of the silicon wafers is reduced.
The above are merely preferred embodiments of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should be able to cover the technical scope of the present invention by equivalent or modified solutions and modifications within the technical scope of the present invention.
Claims (8)
1. A sticking polishing process of a monocrystalline silicon slice is characterized by comprising the following steps:
s1: crushing paraffin, beeswax and rosin;
s2: selecting a mixing container, and mixing according to a specified proportion;
s3: heating the container, stirring and dissolving, then cooling and measuring data;
s4: heating the light plate, and wiping the cooled paraffin mixture on the light plate;
s5: the plate was stopped and the wafer was placed before the paraffin mixture was cooled.
2. The sticking polishing process of a single crystal silicon wafer according to claim 1, wherein the crushing method of paraffin, beeswax and rosin in S1 comprises the following steps:
a1: crushing conventional paraffin into granules, wherein the diameter of the crushed granular paraffin is less than 10mm, and the granular paraffin with the diameter less than 10mm accounts for 80% of the total mass;
a2: crushing conventional beeswax into fine particles, wherein the diameter of the crushed beeswax into fine particles is less than 5mm, and the beeswax with the diameter less than 5mm accounts for 90% of the total weight;
a3: the blocky rosin is crushed into powder and is stored by using a sealed container.
3. The sticking polishing process for a single crystal silicon wafer according to claim 1, wherein a 314 stainless steel heating tank is used as the mixing vessel in S2, and a funnel-shaped discharge pipe is provided at the bottom of the 314 stainless steel heating tank;
beeswax is put into a 314 stainless steel heating tank, and the added beeswax accounts for one fifth of the capacity of the heating tank.
4. The pasting polishing process of a single crystal thin silicon wafer as claimed in claim 1, wherein: the method for heating, dissolving and cooling the raw material in the S3 comprises the following steps:
b1: preheating the heating tank for 2min to 50-60 deg.C, and slowly melting Cera flava during preheating process;
b2: after the preheating of the heating tank is finished, the temperature is between 80 and 100 ℃, the beeswax is completely melted, the heating tank is continuously heated at the moment, the heat preservation is kept between 110 and 130 ℃, and the interior of the heating tank is slowly stirred;
b3: then putting the granular paraffin into a heating tank, mixing the paraffin with the beeswax, heating and stirring for 4min, and fully fusing the paraffin with the beeswax in the melting process, wherein the paraffin accounts for four fifths of the volume of the heating tank;
b4: and finally, slowly adding the rosin powder into a heating tank according to a specified proportion, heating and stirring the rosin powder for 5min, discharging the mixture into a mold, and naturally cooling and solidifying the mixture.
5. The sticking polishing process of a monocrystalline silicon wafer according to claim 4, wherein the adding proportion of the paraffin, the beeswax and the rosin is determined according to the thickness of the monocrystalline wafer, and the proportioning method comprises the following steps:
(1) if the thickness of the single wafer is less than 1mm (and including 1mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.5: 0.6;
(2) if the thickness of the single wafer is more than 1-3mm (and including 3mm), the ratio of paraffin wax, beeswax and rosin is 1: 1.2: 0.8;
(3) if the thickness of the single chip is more than 3-5mm (and more than 5 mm), the ratio of the paraffin wax, the beeswax and the rosin is 1: 1: 0.5.
6. the sticking polishing process of a single crystal silicon wafer according to claim 1, wherein the step of heating the optical plate and wiping the cooled paraffin mixture against the optical plate in S4 comprises the steps of:
c1: selecting a light plate with the surface roughness of Ra1.6, and having unlimited thickness and size larger than that of the single crystal wafer.
C2: heating the light plate for 1min to make the surface temperature reach 70-85 deg.C;
c3: taking a solidified paraffin mixture, continuously wiping the solidified paraffin mixture on the surface of a light plate, melting the paraffin mixture by using heat on the light plate to uniformly coat the paraffin mixture on the light plate, and keeping the paraffin mixture in a liquid state by using waste heat of the light plate.
7. The bonding polishing process for a single crystal silicon wafer according to claim 1, wherein in S5, after the paraffin mixture is uniformly wiped, heating of the optical plate is stopped, and the single crystal wafer is placed on the optical plate while the paraffin mixture is kept in a liquid state, and the paraffin mixture is slowly cooled and solidified as the surface temperature of the optical plate is lowered, and the single crystal wafer is placed on the optical plate while being closely adhered thereto;
finally, the light plate can be fixed on a machine tool, parameters of the machine tool are corrected, and the single chip is processed.
8. The bonding polishing process of a single crystal silicon wafer according to claim 1, wherein the data determination in S3 comprises:
(1) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1.5: strength measurement at 0.6: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 20MPa, 30MPa and 35MPa respectively, carrying out compression test, and recording compression numerical values;
(2) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1.2: intensity measurement at 0.8: taking out the paraffin mixture liquid in the proportion, placing the part in a mould, isolating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 25MPa, 30MPa and 40MPa respectively, carrying out compression test, and recording compression numerical values;
(3) in the condition that the ratio of paraffin wax, beeswax and rosin is 1: 1: intensity measurement at 0.5: and (3) placing the part of the paraffin mixture liquid taken out in the proportion in a mould, insulating water for 10min, cooling and solidifying, placing the part under a press, setting the pressure of the press to be 35MPa, 40MPa and 50MPa respectively, carrying out compression test, and recording compression numerical values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210578251.2A CN115106914B (en) | 2022-05-25 | 2022-05-25 | Pasting and polishing process of monocrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210578251.2A CN115106914B (en) | 2022-05-25 | 2022-05-25 | Pasting and polishing process of monocrystalline silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115106914A true CN115106914A (en) | 2022-09-27 |
| CN115106914B CN115106914B (en) | 2024-06-04 |
Family
ID=83326962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210578251.2A Active CN115106914B (en) | 2022-05-25 | 2022-05-25 | Pasting and polishing process of monocrystalline silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115106914B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86101702A (en) * | 1986-03-12 | 1986-09-10 | 洛阳单晶硅厂 | Waxy-liquid adhesive |
| JPH10265741A (en) * | 1997-03-26 | 1998-10-06 | Mitsui Chem Inc | Tacky film for grinding back of semiconductor wafer and grinding back of semiconductor wafer |
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN102061474A (en) * | 2010-10-01 | 2011-05-18 | 绍兴旭昌科技企业有限公司 | Super-thickness chemical thinning method for semiconductor wafer |
| CN103692337A (en) * | 2013-12-18 | 2014-04-02 | 杭州晶地半导体有限公司 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
| CN104369085A (en) * | 2014-09-15 | 2015-02-25 | 华东光电集成器件研究所 | Silicon wafer polishing and bonding method |
| CN111621262A (en) * | 2020-05-18 | 2020-09-04 | 江苏聚冠新材料科技有限公司 | Wafer bonding wax and preparation method thereof |
-
2022
- 2022-05-25 CN CN202210578251.2A patent/CN115106914B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86101702A (en) * | 1986-03-12 | 1986-09-10 | 洛阳单晶硅厂 | Waxy-liquid adhesive |
| JPH10265741A (en) * | 1997-03-26 | 1998-10-06 | Mitsui Chem Inc | Tacky film for grinding back of semiconductor wafer and grinding back of semiconductor wafer |
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN102061474A (en) * | 2010-10-01 | 2011-05-18 | 绍兴旭昌科技企业有限公司 | Super-thickness chemical thinning method for semiconductor wafer |
| CN103692337A (en) * | 2013-12-18 | 2014-04-02 | 杭州晶地半导体有限公司 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
| CN104369085A (en) * | 2014-09-15 | 2015-02-25 | 华东光电集成器件研究所 | Silicon wafer polishing and bonding method |
| CN111621262A (en) * | 2020-05-18 | 2020-09-04 | 江苏聚冠新材料科技有限公司 | Wafer bonding wax and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115106914B (en) | 2024-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102490439B (en) | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) | |
| CN103913364A (en) | Sample preparation method for electron back scattering diffraction analysis of thin steel and iron material | |
| CN103033403B (en) | A kind of preparation method of thin-sheet metal film test sample | |
| CN102607916A (en) | Preparation method of silicon chip metallographic specimen | |
| CN111693736B (en) | Section sample of lithium ion battery electrode plate for atomic force microscope characterization and preparation method thereof | |
| CN111613524B (en) | Packaging wafer back grinding structure and grinding method | |
| CN102268567A (en) | Preparation method of copper-phosphorus alloy | |
| CN101934490A (en) | Polishing process for ultrahigh-resistivity silicon polished wafer | |
| CN116333602A (en) | Diamond liquid for thinning silicon carbide substrate and application thereof | |
| CN115106914A (en) | Sticking polishing process of monocrystalline thin silicon wafer | |
| CN110632104A (en) | Electrolytic polishing method for pure titanium and titanium alloy EBSD samples | |
| CN106003442B (en) | A kind of sticking structure and method for the molten inspection silicon rod cutting in area | |
| CN105652040A (en) | TEM sample preparation method | |
| JPH02220838A (en) | Laminate and support material of member to be polished and polishing cloth used therewith | |
| CN109366347A (en) | A kind of grinding pad and preparation method thereof suitable for hard brittle material precise finiss | |
| CN114414322A (en) | Pouring reversible component sample preparation grinding method | |
| CN103692337A (en) | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers | |
| CN107228870A (en) | A kind of cemented carbide powder EBSD method for making sample | |
| CN107418473B (en) | A kind of water solubility bonding wafer agent | |
| CN113916621B (en) | Method for preparing inclusion slice sample and application thereof | |
| CN117388020B (en) | Sample target composed of diamond and inner mineral inclusion and preparation method thereof | |
| CN207871994U (en) | Agitating device for the processing of 3D glass protection ink | |
| CN112210331B (en) | Solar crystal bar bottom plate glue, preparation method thereof and solar crystal bar cutting method | |
| CN116460756A (en) | Ceramic-based diamond grinding wheel for wafer thinning and preparation method and application | |
| CN117802581A (en) | Platinum crucible for crystal growth and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240430 Address after: 214026 No. 158 Nanhu Middle Road, Xuelang Street, Binhu District, Wuxi City, Jiangsu Province Applicant after: Hoyuan Green Energy Co.,Ltd. Country or region after: China Address before: 214000 109-1, zone B, Jinshan North Private Industrial Park, Wuxi City, Jiangsu Province Applicant before: O'TEKER (WUXI) AUTOMATIC CONTROL ENGINEERING CO.,LTD. Country or region before: China |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |