CN113541455A - SiC MOSFET module continuously adjustable multi-level driving circuit - Google Patents

SiC MOSFET module continuously adjustable multi-level driving circuit Download PDF

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CN113541455A
CN113541455A CN202110720418.XA CN202110720418A CN113541455A CN 113541455 A CN113541455 A CN 113541455A CN 202110720418 A CN202110720418 A CN 202110720418A CN 113541455 A CN113541455 A CN 113541455A
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turn
voltage
stage
sic mosfet
driving
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孟昭亮
高勇
杨媛
艾胜胜
董志伟
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Xian Polytechnic University
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Xian Polytechnic University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

A SiC MOSFET module continuously adjustable multilevel driving circuit comprises a control unit; the control unit is respectively connected with a multi-level driving circuit and a continuous adjustable driving power supply, and the multi-level driving circuit is connected with a power unit; the continuously adjustable multi-level driving circuit comprises four NMOS switching tubes, four PMOS switching tubes and four continuously adjustable driving power supplies Vqd1、Vqd2、Vqd3、Vqd4The combination realizes that the driving voltage resistance is continuously adjustable. Besides the functions of isolated transmission and power amplification, the grid driver also has the functions of reducing reverse recovery current spike, reducing turn-off overvoltage, reducing device switching loss and turning on and off time.

Description

SiC MOSFET module continuously adjustable multi-level driving circuit
Technical Field
The invention belongs to the technical field of drive circuit improvement, and particularly relates to a SiC MOSFET module continuously adjustable multi-level drive circuit.
Background
SiC devices are mainly commercialized at present as SiC diodes, SiC transistors, and the like, and among many SiC devices, SiC MOSFET modules are most attracting attention. Compared with the traditional IGBT, the SiC MOSFET module not only has higher breakdown voltage resistance, but also has excellent high-temperature and high-frequency characteristics while realizing smaller on-resistance. In addition, the excellent thermal conductivity and high-temperature performance enable the performance requirement of the SiC MOSFET module on a radiator in high-power electronic application to be reduced, and the power density and stability of the whole power electronic device are greatly improved. By virtue of the above advantages, SiC MOSFET modules will gradually replace Si MOSFETs, IGBTs and IPMs as the first choice for power devices in high performance power electronics applications.
The drive protection technology determines that the SiC MOSFET module can work reliably and protects the module when a fault occurs. However, the problems of switching oscillation, voltage and current spikes, switching loss caused by high switching speed, short circuit endurance time and the like all bring great challenges to the wide application of the SiC MOSFET module.
The drive voltage, the drive current and the drive resistance influence the switching characteristics of the SiC MOSFET module; the existing driving mode is too single, only voltage or resistance can be switched simply, switching time, switching loss and switching voltage and current peaks cannot be considered, and the fine adjustment of a switching process cannot be realized.
Disclosure of Invention
The invention aims to provide a SiC MOSFET module continuously adjustable multi-level driving circuit, which solves the problems that the driving circuit in the prior art is too single, can only be switched simply and cannot finely adjust the switching process.
The invention adopts the following technical scheme:
a SiC MOSFET module continuously adjustable multilevel driving circuit comprises a control unit; the control unit is respectively connected with a multi-grade drive circuit and a continuous adjustable drive power supply, and the multi-grade drive circuit is connected with a power unit.
The continuously adjustable multi-level driving circuit comprises four NMOS switching tubes, four PMOS switching tubes and four continuously adjustable driving power supplies Vqd1、Vqd2、Vqd3、Vqd4The combination realizes that the driving voltage resistance is continuously adjustable.
The continuous adjustable driving power supply comprises a voltage setting module, the voltage setting module is connected with a control circuit, the control circuit is connected with a main circuit through a driving signal, a direct-current voltage output end of the main circuit is connected with a sampling circuit in parallel, the sampling circuit inputs direct-current voltage to a voltage-frequency conversion circuit, the voltage-frequency conversion circuit is connected with a frequency-voltage conversion circuit through an optical fiber, and the frequency-voltage conversion circuit is connected with the control circuit.
The control circuit adopts FPGA to provide simple logic control.
The turn-on process and the turn-off process of the driving circuit are divided into three stages, namely turn-on delay time of a first stage of the turn-on process, turn-on voltage drop, turn-on current rise and current peak of a second stage of the turn-on process, and enter a complete turn-on state of a third stage of the turn-on process; the first stage of the turn-off process is turned off for delay time, the second stage of the turn-off process is turned off for voltage rise, current drop and voltage spike, and the third stage of the turn-off process is turned on for complete turn-off.
A control method of a SiC MOSFET module continuously adjustable multilevel driving circuit adopts a SiC MOSFET module continuously adjustable multilevel driving circuit, and comprises the following specific steps:
step 1: obtaining driving voltage, driving resistance, Miller capacitance and driving current parameters of the SiC MOSFET module of the new module by looking up a data manual corresponding to the new module;
step 2: performing a double-pulse experiment on the recommended value of the module on a double-pulse platform to obtain the opening time ton1Off time toff1On-off loss Eon1Turn-off loss Eoff1Turn-on current peak Δ IDOff voltage spike Δ VDS；
And step 3: calculating the driving voltage and the resistance { V } of the SiC MOSFET with the turn-on delay time less than the delay time of the module recommended value according to the data in the step 2qd1 RGon1}; calculating the driving voltage and the resistance { V) of the SiC MOSFET module with the turn-off delay time smaller than the delay time recommended by the merchantqd4 RGoff1}；
And 4, step 4: calculating turn-on loss and turn-off loss, assuming that the current slope and the voltage slope are linear changes, and the loss in the turn-on process is mainly generated by current rise, voltage drop and diode reverse recovery effectThe loss of the turn-off process is mainly caused by the drain-source voltage VDSRise and drain current ID(ii) caused by a decline;
and 5: calculating the driving voltage and the resistance { V } of the current rise and the drain-source voltage slope, wherein the slope of the current rise and the drain-source voltage slope are smaller than the merchant recommended valueqd2 RGon2}；
Step 5.5: calculating the driving voltage and the resistance { V ] of the current drop and the drain-source voltage slope which are lower than the merchant recommended value and the off current drop and the drain-source voltage slopeGSRGoff2}；
Step 6: the third stage of the turn-on process is that the SiC MOSFET module enters a complete turn-on stage, and the drive voltage v is turned onGSIs a Vqd3Driving resistance RGIs RGon3By increasing Vqd3Or decrease RGon3The speed of the SiC MOSFET module entering complete turn-on is increased, and the turn-on time is further shortened;
step 6.6: the third stage of the turn-off process is that the SiC MOSFET module enters a complete turn-off stage, in which the drive voltage v is turned offGSIs a Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The speed of the SiC MOSFET module entering complete turn-off is increased, and the turn-on time is further shortened;
and 7: and calculating the turn-on time and the turn-off time of the SiC MOSFET module.
And 8: finding out the optimal driving effect of the turn-on process and the turn-off process by adopting a comprehensive evaluation strategy, wherein the optimal turn-on effect of the turn-on process is the turn-on time tonOn-off loss EonTurn-on current peak Δ IDAt the same time, the minimum; the best evaluation mode of the turn-off process is the turn-off time t of the SiC MOSFET moduleoffOff voltage spike Δ VDSAnd turn-off loss EoffAt the same time, the minimum; i.e. Vyon、VyoffMinimum;
Vyon＝ΔID·td·Eon (3-19)
Vyoff＝ΔVDS·ts·Eoff (3-20)
and step 9: the optimal driving voltage and driving resistance of each stage can be obtained through the processes, so that an optimal driving scheme is obtained, a double-pulse experiment is carried out on the action time of the second stage by taking the driving voltage and the driving resistance of the second stage as parameters, the action time of the second stage is read and then set, and similarly, the action time of the third stage is determined through the method.
In step 3, the SiC MOSFET module is turned on for a delay time tdComprises the following steps:
Figure BDA0003136309010000031
in the formula: rGon1Switching on a driving resistor for the first stage of the switching-on process; cGSIs a gate-source capacitance; cGDIs a gate-drain capacitance; vqd1A first stage drive voltage for a turn-on process; vTTo turn on the threshold voltage; vGSoffThe voltage is driven for the off state of the SiC MOSFET module.
Turn-off delay time t of SiC MOSFET modules。
Figure BDA0003136309010000032
In the formula: rGoff1The driving resistor is turned off for the first stage of the turn-off process; vqd4Driving voltage for the first stage of the turn-off process; vGSonThe voltage is driven for the SiC MOSFET module on state.
In step 4, the turn-on loss EonAnd turn-off loss EoffThe calculation method specifically comprises the following steps:
Figure BDA0003136309010000041
Figure BDA0003136309010000042
in the formula: eon,diD/dtCurrent rise loss to turn on; eon,dvDS/dtTo turn on voltage drop losses; eIpeakReverse recovery losses for turning on the diode; eoff,diD/dtCurrent reduction loss to turn off; eoff,dvDS/dtTo turn off voltage rise losses.
During the opening process, the current rise time loss is shown as (3-12), and the voltage drop loss is shown as (3-13).
Figure BDA0003136309010000043
Figure BDA0003136309010000044
In the formula: i isLIs the load current; vDCIs the bus voltage; l isPIs the loop inductance. Moreover, σ is as shown in (3-14).
Figure BDA0003136309010000045
The current spikes are shown in (3-15), and the losses due to reverse recovery are shown in (3-16):
Figure BDA0003136309010000046
Figure BDA0003136309010000047
in the formula: qrrThe charge is recovered in the reverse direction for the diode.
The turn-on loss according to (3-10), (3-12), (3-13), and (3-16) is as shown in (3-17):
Figure BDA0003136309010000051
similarly, turn-off loss EoffThe calculation method comprises the following steps:
Figure BDA0003136309010000052
in step 5, the method for calculating the current rising slope is as follows:
Figure BDA0003136309010000053
in the formula: gmIs the transconductance of the SiC MOSFET module; vqd2Driving voltage for the second stage of the turn-on process; i isDThe drain current rating; cissA SiC MOSFET module input capacitor; rGon2The drive resistor is turned on for the second stage of the turn-on process.
Drive current IGAnd a drain-source voltage vDSThe calculation method of the slope comprises the following steps:
Figure BDA0003136309010000054
Figure BDA0003136309010000055
in the formula: vGmilIs the Miller voltage; i isGDriving a current for the driver.
Calculating the off-current falling slope, the current falling with the drain-source voltage slope smaller than the merchant recommended value, the driving voltage of the drain-source voltage slope and the resistance { V } according to (3-7) and (3-8)GSRGoff2}; the voltage slope is shown as (3-7) and the current slope is shown as (3-8).
Figure BDA0003136309010000056
Figure BDA0003136309010000061
This patent drives the voltage V at this stageGSSelect 0V, so as to turn on Q5And Q8The drive voltage V can be turned off at this stageGSIs 0V, the driving resistor R is turned offGIs RGoff2。
In step 7, the turn-on time of the SiC MOSFET module is:
ton＝Δt1+Δt2+Δt3 (3-5)
in the formula: Δ t1The first stage time of the switching-on process of the SiC MOSFET module; Δ t2The second stage time of the switching-on process of the SiC MOSFET module; Δ t3And carrying out third-stage time for the turn-on process of the SiC MOSFET module.
Driving voltage v at third stage of turn-off processGSis-Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The turn-off speed of the SiC MOSFET module can be increased, and the turn-off time is further shortened. The SiC MOSFET module turn-off time is therefore:
toff＝Δt4+Δt5+Δt6 (3-9)
in the formula: Δ t4The first stage time of the turn-off process of the SiC MOSFET module is obtained; Δ t5The second stage time of the turn-off process of the SiC MOSFET module; Δ t6And the third stage time of the turn-off process of the SiC MOSFET module.
Compared with the prior art, the invention has the positive improvement effects that:
besides the functions of isolated transmission and power amplification, the grid driver also has the functions of reducing reverse recovery current spike, reducing turn-off overvoltage, reducing device switching loss and turning on and off time.
Drawings
FIG. 1 shows a SiC MOSFET module continuously adjustable multi-level driving circuit of the present invention
Hierarchical driving circuit structure block diagram
FIG. 2 is a schematic diagram of a continuously adjustable multilevel driving circuit of a SiC MOSFET module according to the present invention
FIG. 3 is a block diagram of a continuously adjustable multilevel driving power supply of a SiC MOSFET module continuously adjustable multilevel driving circuit of the present invention
FIG. 4 shows a SiC MOSFET module continuously adjustable multi-level driving circuit of the present invention
Hierarchical driving circuit operation mode
FIG. 5 shows the on-off waveform of a SiC MOSFET module continuously adjustable multilevel driving circuit
FIG. 6 shows the effect of the continuously adjustable multilevel driving of the SiC MOSFET module continuously adjustable multilevel driving circuit on the switch of the SiC MOSFET
FIG. 7 is a radar chart showing the influence of the continuously adjustable multilevel driving of the SiC MOSFET module continuously adjustable multilevel driving circuit on the SiC MOSFET switch
FIG. 8 is a diagram of a continuously adjustable multilevel driving circuit of a SiC MOSFET module according to the present invention
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
A SiC MOSFET module continuously adjustable multilevel driving circuit comprises a control unit; the control unit is respectively connected with a multi-level driving circuit as shown in fig. 2, and a continuously adjustable driving power supply as shown in fig. 3, and the multi-level driving circuit is connected with a power unit as shown in fig. 1.
The continuously adjustable multi-level driving circuit comprises four NMOS switching tubes, four PMOS switching tubes and four continuously adjustable driving power supplies Vqd1、Vqd2、Vqd3、Vqd4The combination realizes that the driving voltage resistance is continuously adjustable. Their linking is shown in fig. 8.
The continuous adjustable driving power supply comprises a voltage setting module, the voltage setting module is connected with a control circuit, the control circuit is connected with a main circuit through a driving signal, a direct-current voltage output end of the main circuit is connected with a sampling circuit in parallel, the sampling circuit inputs direct-current voltage to a voltage-frequency conversion circuit, the voltage-frequency conversion circuit is connected with a frequency-voltage conversion circuit through an optical fiber, and the frequency-voltage conversion circuit is connected with the control circuit.
The control circuit adopts FPGA to provide simple logic control.
The turn-on process and the turn-off process of the driving circuit are divided into three stages, namely turn-on delay time of a first stage of the turn-on process, turn-on voltage drop, turn-on current rise and current peak of a second stage of the turn-on process, and enter a complete turn-on state of a third stage of the turn-on process; the first stage of the turn-off process is turned off for delay time, the second stage of the turn-off process is turned off for voltage rise, current drop and voltage spike, and the third stage of the turn-off process is turned on for complete turn-off.
A control method of a SiC MOSFET module continuously adjustable multilevel driving circuit adopts a SiC MOSFET module continuously adjustable multilevel driving circuit, and comprises the following specific steps:
step 1: obtaining driving voltage, driving resistance, Miller capacitance and driving current parameters of the SiC MOSFET module of the new module by looking up a data manual corresponding to the new module;
step 2: performing a double-pulse experiment on the recommended value of the module on a double-pulse platform to obtain the opening time ton1Off time toff1On-off loss Eon1Turn-off loss Eoff1Turn-on current peak Δ IDOff voltage spike Δ VDS；
And step 3: calculating the driving voltage and the resistance { V } of the SiC MOSFET with the turn-on delay time less than the delay time of the module recommended value according to the data in the step 2qd1 RGon1}; calculating the driving voltage and the resistance { V) of the SiC MOSFET module with the turn-off delay time smaller than the delay time recommended by the merchantqd4 RGoff1}；
And 4, step 4: calculating the turn-on loss and turn-off loss, assuming that the current slope and the voltage slope are linear changes, the loss in the turn-on process mainly consists of current rise,Voltage drop and diode reverse recovery effect, the turn-off loss is mainly caused by the drain-source voltage VDSRise and drain current ID(ii) caused by a decline;
and 5: calculating the driving voltage and the resistance { V } of the current rise and the drain-source voltage slope, wherein the slope of the current rise and the drain-source voltage slope are smaller than the merchant recommended valueqd2 RGon2}；
Step 5.5: calculating the driving voltage and the resistance { V ] of the current drop and the drain-source voltage slope which are lower than the merchant recommended value and the off current drop and the drain-source voltage slopeGSRGoff2}；
Step 6: the third stage of the turn-on process is that the SiC MOSFET module enters a complete turn-on stage, and the drive voltage v is turned onGSIs a Vqd3Driving resistance RGIs RGon3By increasing Vqd3Or decrease RGon3The speed of the SiC MOSFET module entering complete turn-on is increased, and the turn-on time is further shortened;
step 6.6: the third stage of the turn-off process is that the SiC MOSFET module enters a complete turn-off stage, in which the drive voltage v is turned offGSIs a Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The speed of the SiC MOSFET module entering complete turn-off is increased, and the turn-on time is further shortened;
and 7: and calculating the turn-on time and the turn-off time of the SiC MOSFET module.
And 8: finding out the optimal driving effect of the turn-on process and the turn-off process by adopting a comprehensive evaluation strategy, wherein the optimal turn-on effect of the turn-on process is the turn-on time tonOn-off loss EonTurn-on current peak Δ IDAt the same time, the minimum; the best evaluation mode of the turn-off process is the turn-off time t of the SiC MOSFET moduleoffOff voltage spike Δ VDSAnd turn-off loss EoffAt the same time, the minimum; i.e. Vyon、VyoffMinimum;
Vyon＝ΔID·td·Eon (3-19)
Vyoff＝ΔVDS·ts·Eoff (3-20)
and step 9: the optimal driving voltage and driving resistance of each stage can be obtained through the processes, so that an optimal driving scheme is obtained, a double-pulse experiment is carried out on the action time of the second stage by taking the driving voltage and the driving resistance of the second stage as parameters, the action time of the second stage is read and then set, and similarly, the action time of the third stage is determined through the method.
In step 3, the SiC MOSFET module is turned on for a delay time tdComprises the following steps:
Figure BDA0003136309010000091
in the formula: rGon1Switching on a driving resistor for the first stage of the switching-on process; cGSIs a gate-source capacitance; cGDIs a gate-drain capacitance; vqd1A first stage drive voltage for a turn-on process; vTTo turn on the threshold voltage; vGSoffThe voltage is driven for the off state of the SiC MOSFET module.
Turn-off delay time t of SiC MOSFET modules。
Figure BDA0003136309010000092
In the formula: rGoff1The driving resistor is turned off for the first stage of the turn-off process; vqd4Driving voltage for the first stage of the turn-off process; vGSonThe voltage is driven for the SiC MOSFET module on state.
In step 4, the turn-on loss EonAnd turn-off loss EoffThe calculation method specifically comprises the following steps:
Figure BDA0003136309010000093
Figure BDA0003136309010000094
in the formula: eon,diD/dtCurrent rise loss to turn on; eon,dvDS/dtTo turn on voltage drop losses; eIpeakReverse recovery losses for turning on the diode; eoff,diD/dtCurrent reduction loss to turn off; eoff,dvDS/dtTo turn off voltage rise losses.
During the opening process, the current rise time loss is shown as (3-12), and the voltage drop loss is shown as (3-13).
Figure BDA0003136309010000095
Figure BDA0003136309010000096
In the formula: i isLIs the load current; vDCIs the bus voltage; l isPIs the loop inductance. Moreover, σ is as shown in (3-14).
Figure BDA0003136309010000101
The current spikes are shown in (3-15), and the losses due to reverse recovery are shown in (3-16):
Figure BDA0003136309010000102
Figure BDA0003136309010000103
in the formula: qrrThe charge is recovered in the reverse direction for the diode.
The turn-on loss according to (3-10), (3-12), (3-13), and (3-16) is as shown in (3-17):
Figure BDA0003136309010000104
similarly, turn-off loss EoffThe calculation method comprises the following steps:
Figure BDA0003136309010000105
in step 5, the method for calculating the current rising slope is as follows:
Figure BDA0003136309010000106
in the formula: gmIs the transconductance of the SiC MOSFET module; vqd2Driving voltage for the second stage of the turn-on process; i isDThe drain current rating; cissA SiC MOSFET module input capacitor; rGon2The drive resistor is turned on for the second stage of the turn-on process.
Drive current IGAnd a drain-source voltage vDSThe calculation method of the slope comprises the following steps:
Figure BDA0003136309010000111
Figure BDA0003136309010000112
in the formula: vGmilIs the Miller voltage; i isGDriving a current for the driver.
Calculating the off-current falling slope, the current falling with the drain-source voltage slope smaller than the merchant recommended value, the driving voltage of the drain-source voltage slope and the resistance { V } according to (3-7) and (3-8)GSRGoff2}; the voltage slope is shown as (3-7) and the current slope is shown as (3-8).
Figure BDA0003136309010000113
Figure BDA0003136309010000114
This patent drives the voltage V at this stageGSSelect 0V, so as to turn on Q5And Q8The drive voltage V can be turned off at this stageGSIs 0V, the driving resistor R is turned offGIs RGoff2。
In step 7, the turn-on time of the SiC MOSFET module is:
ton＝Δt1+Δt2+Δt3 (3-5)
in the formula: Δ t1The first stage time of the switching-on process of the SiC MOSFET module; Δ t2The second stage time of the switching-on process of the SiC MOSFET module; Δ t3And carrying out third-stage time for the turn-on process of the SiC MOSFET module.
Driving voltage v at third stage of turn-off processGSis-Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The turn-off speed of the SiC MOSFET module can be increased, and the turn-off time is further shortened. The SiC MOSFET module turn-off time is therefore:
toff＝Δt4+Δt5+Δt6 (3-9)
in the formula: Δ t4The first stage time of the turn-off process of the SiC MOSFET module is obtained; Δ t5The second stage time of the turn-off process of the SiC MOSFET module; Δ t6And the third stage time of the turn-off process of the SiC MOSFET module.
The working principle of the invention is as follows:
through analyzing the on-off process of the SiC MOSFET module, the on-off process of the SiC MOSFET module is divided into three stages, and the on-off delay time, the on-off loss, the on-off current peak, the on-off delay time, the off-off loss and the off-off voltage peak are respectively calculated. And then, the switching-on and switching-off processes are finely adjusted by controlling the driving voltage and the driving resistance of each stage, so that the switching effect of the SiC MOSFET module is further optimized.
The working process of the invention is as follows:
the invention selects the continuously adjustable driving power voltage Vqd1、Vqd2、Vqd3、Vqd4As the SiC MOSFET module driving voltage; rGon1～RGon3Turning on the resistor; rGoff1～RGoff3To turn off the resistance. Through eight switching tubes Q1～Q8And continuously adjustable drive supply voltage Vqd1、Vqd2、Vqd3、Vqd4(ii) a On resistance RGon1、RGon2、RGon3(ii) a Switch-off resistance RGoff1、RGoff2、RGoff3The combination of (a) and (b) achieves continuously adjustable multi-level driving. The implementation process is as shown in FIG. 4, when the switch tube Q1、Q8When conducting, drive the turn-on voltage VGSIs a Vqd1Driving the on-resistance RGIs RGon1. All in one2、Q8When conducting, drive the turn-on voltage VGSIs a Vqd2Driving the on-resistance RGIs RGon2(ii) a When Q is3、Q8When conducting, drive the turn-on voltage VGSIs a Vqd3Driving the on-resistance RGIs RGon3(ii) a When Q is4、Q7When conducting, the turn-off voltage V is drivenGSis-Vqd4Driving the turn-off resistor RGIs RGoff1(ii) a When Q is4、Q8When conducting, the turn-off voltage V is drivenGSIs 0V, drives the off resistance RGIs RGoff2(ii) a When Q is4、Q7When conducting, the turn-off voltage V is drivenGSis-Vqd4Driving the turn-off resistor RGIs RGoff3. Thus, Q can be utilized1～Q8And a continuously adjustable drive power supply Vqd1、Vqd2、Vqd3、Vqd4The driving voltage is continuously adjustable, namely 0-27V is adjustable, and the driving resistance is switched on, namely RGon1、RGon2、RGon3And turn off the drive resistor RGoff1、RGoff2、RGoff3The adjustable switch can change the resistance, voltage and current of a driving loop, realize the fine adjustment of the on-off process and further optimize the switch effect of the SiC MOSFET module.
The working principle of the invention is as follows:
the principle of the continuously adjustable multilevel driving circuit technology is that through analyzing the on-off process of the SiC MOSFET module, the on-off process of the SiC MOSFET module is divided into three stages, and the on-off delay time, the on-off loss, the on-off current peak, the on-off delay time, the on-off loss and the off-off voltage peak are respectively calculated. And then, the switching-on and switching-off processes are finely adjusted by controlling the driving voltage and the driving resistance of each stage, so that the switching effect of the SiC MOSFET module is further optimized.
Based on the research result of the existing variable gate drive resistor, the invention divides the turn-on process and the turn-off process of the SiC MOSFET module into three stages so as to obtain different control purposes based on the continuous switching process. The SiC MOSFET module turn-on and turn-off waveforms are shown in fig. 5 and analyzed in detail below.
1) Commissioning control strategy
(1)[t0-t1]：t0The moment driving signal PWM comes at high level, and the SiC MOSFET module driver drives the voltage vGSBy switching off the voltage V from the negative directionGSoffStart to rise to t1Reaches the driving threshold voltage V of the SiC MOSFET module at the momentTThe time of day. This phase vGSMainly for the gate-source capacitance CGSCharging and SiC MOSFET module drain current iDAnd a drain-source voltage vDSAnd is not changed. This stage is referred to as the SiC MOSFET module turn-on delay stage, the delay time is shown as (1), and the stage is divided into the turn-on first stage. If the SiC MOSFET module turn-on driving voltage V is increased at this stage, as shown in (1)GSI.e. Vqd1Or reducing the on-drive resistance RGNamely RGon1The gate-source capacitance C of the SiC MOSFET module can be acceleratedGSSo that the SiC MOSFET module drives the voltage vGSIs fast toUp to a threshold voltage VT. Thereby reducing the turn-on delay time t of the SiC MOSFET moduled。
Figure BDA0003136309010000131
In the formula: rGon1Switching on a driving resistor for the first stage of the switching-on process; cGSIs a gate-source capacitance; cGDIs a gate-drain capacitance; vqd1A first stage drive voltage for a turn-on process; vTTo turn on the threshold voltage; vGSoffThe voltage is driven for the off state of the SiC MOSFET module.
(2)[t1-t2]：t1Time instant vGSDriving-on threshold voltage V by SiC MOSFET moduleTStart to rise to t2The moment reaches the driving Miller voltage V of the SiC MOSFET moduleGmil. SiC MOSFET module drain current i at this stageDAt t1The moment begins to rise rapidly to t2At the moment, the drain current rises to a current maximum, i.e. a current spike, and the drain-source voltage vDSThe current rise slope is shown in (2) without change.
Figure BDA0003136309010000132
In the formula: gmIs the transconductance of the SiC MOSFET module; vqd2Driving voltage for the second stage of the turn-on process; i isDThe drain current rating; cissA SiC MOSFET module input capacitor; rGon2The drive resistor is turned on for the second stage of the turn-on process.
(3)[t2-t3]：t2Moment-of-time SiC MOSFET module drive voltage vGSFrom the Miller plateau voltage value VGmilStart to t3Time instant vGSGreater than Miller voltage VGmilThe time of day. SiC MOSFET module driving voltage v at this stageGSMainly for the gate-drain capacitance CGDCharging and SiC MOSFET module drain-source voltage VDSAt t2The time begins to fall to t3At that time, the voltage drops to 10% of the rated voltage. The drive current is shown in (3).
Drain-source voltage vDSThe slope is shown in (4).
Figure BDA0003136309010000141
Figure BDA0003136309010000142
In the formula: vGmilIs the Miller voltage; i isGDriving a current for the driver.
t1-t3The stage is mainly that the turn-on current of the SiC MOSFET module rises and the turn-on voltage drops, and a current spike exists due to the reverse recovery action of the diode. This phase is mainly to limit the current rise speed, the voltage fall speed and the current spike. Thus t is1-t3The stage is divided into a second stage of the turn-on process of the SiC MOSFET module. From (3-2), (3-3) and (3-4), increasing RGon2Or decrease Vqd2Can reduce the drive current I of the SiC MOSFET module driverGThereby reducing dvDS/dt、diDDt and IDpeak。
(4)[t3-t4]：t3Moment-of-time SiC MOSFET module drive voltage vGSFor gate-drain capacitance CGDCharging is completed by4The SiC MOSFET module is fully on at that moment. This stage is where the SiC MOSFET module enters a deep saturation region. This stage is divided into the third stage of the turn-on process. The stage turns on the driving voltage vGSIs a Vqd3Driving resistance RGIs RGon3By increasing Vqd3Or decrease RGon3The speed of the SiC MOSFET module entering a deep saturation region can be increased, and the turn-on time is further shortened. The SiC MOSFET module on-time is thus as shown in (5).
ton＝Δt1+Δt2+Δt3 (5)
In the formula: Δ t1The first stage time of the switching-on process of the SiC MOSFET module; Δ t2The second stage time of the switching-on process of the SiC MOSFET module; Δ t3And carrying out third-stage time for the turn-on process of the SiC MOSFET module.
2) Shutdown control strategy
(1)[t5-t6]：t5The moment driving signal PWM is reduced to low level, and the SiC MOSFET module driver drives the voltage vGSFrom the turn-on drive voltage VGSonBegins to fall to t6The moment reaches the driving Miller voltage V of the SiC MOSFET moduleGmilThe time of day. This phase vGSMainly for the gate-drain capacitance CDSDischarging and SiC MOSFET module drain current iDAnd drain-source voltage vDSRemain unchanged. This phase is referred to as the SiC MOSFET module turn-off delay phase, the delay time is shown as (6), and is divided into the first phase of the turn-off process. As shown in (6), if the off-drive voltage V of the SiC MOSFET module is increased at this stageGSI.e. Vqd4Or reducing the turn-off drive resistance RGNamely RGoff1The grid electrode-drain electrode capacitance C of the SiC MOSFET module can be acceleratedDSDischarge speed, i.e. extraction speed of electric charge, to make the SiC MOSFET module drive voltage vGSQuickly reaches miller voltage VGmilTo reduce the turn-off delay time t of the SiC MOSFET modules。
Figure BDA0003136309010000151
In the formula: rGoff1The driving resistor is turned off for the first stage of the turn-off process; vqd4Driving voltage for the first stage of the turn-off process; vGSonThe voltage is driven for the SiC MOSFET module on state.
(2)[t6-t7]：t6Moment-of-time SiC MOSFET module drive voltage vGSDown to the miller plateau voltage value VGmilStart to t7Time instant vGSLess than Miller voltage VGmilThe time of day. The stepSegment SiC MOSFET module drain-source voltage vDSAt t6The time begins to rise to t7The moment at which the drain current starts to fall.
(3)[t7-t8]：t7Time instant vGSLess than Miller voltage VGmilFrom time to t8Time instant vGSEqual to threshold voltage VTThe time of day. SiC MOSFET module drain current i at this stageDAt t7The moment begins to rapidly decrease to t8At that time, the drain current drops to 10% of the current rating. The slope of the voltage at this stage is shown as (7), and the slope of the current is shown as (8).
Figure BDA0003136309010000152
Figure BDA0003136309010000153
t6-t8The phases are mainly voltage rise and current drop due to parasitic inductance L existing in the power loop of the SiC MOSFET modulepSo if di isDThe larger the/dt, the resulting induced voltage will be superimposed on the bus voltage to form a voltage spike. This phase is mainly to limit the off-current falling speed, the off-voltage rising speed and the voltage spike. Thus t is6-t8The stage is divided into a second stage of the turn-off process of the SiC MOSFET module. As shown in (7) and (8), R is increasedGoff2Or decrease VGSCan reduce the drive current I of the SiC MOSFET module driverGThereby reducing diD/dt、dvDSDt and VDSpeak. The paper drives the voltage V at this stageGSSelect 0V, so as to turn on Q5And Q8The drive voltage V can be turned off at this stageGSIs 0V, the driving resistor R is turned offGIs RGoff2。
(4)[t8-t9]：t8Time instant vGSEqual to threshold voltage VTTime of dayStart to t9The moment the SiC MOSFET module is completely turned off. This phase is divided into a third phase of the shutdown process. The phase of turning off the driving voltage vGSis-Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The turn-off speed of the SiC MOFET module can be increased, and the turn-off time is further shortened. The SiC MOSFET turn-off time is thus as shown in (9).
toff＝Δt5+Δt6+Δt7 (9)
In the formula: Δ t5The first stage time of the turn-off process of the SiC MOSFET module is obtained; Δ t6The second stage time of the turn-off process of the SiC MOSFET module; Δ t7And the third stage time of the turn-off process of the SiC MOSFET module.
(4) Driving effect calculation method
The best turn-on effect of the turn-on process of the SiC MOSFET module is the turn-on time tonOn-off loss EonTurn-on current peak Δ IDAt the same time, the minimum; the best evaluation mode of the turn-off process is the turn-off time t of the SiC MOSFEToffOff voltage spike Δ VDSAnd turn-off loss EoffWhile being minimal.
Aiming at the long opening time, the time of the first stage and the third stage of opening is mainly shortened. Similarly, the too long turn-off time mainly shortens the turn-off first stage time and the turn-off third stage time.
The switching loss is calculated as shown in fig. 5 based on an ideal voltage current waveform. To simplify the calculation, assuming that the current slope and the voltage slope are linear changes, the turn-on process loss is mainly caused by the current rise, the voltage drop and the diode reverse recovery effect, and the turn-off process loss is mainly caused by the drain-source voltage VDSRise and drain current IDThe drop causes the turn-on loss to be shown as (10) and the turn-off loss to be shown as (11).
Figure BDA0003136309010000161
Figure BDA0003136309010000162
In the formula: eon,diD/dtCurrent rise loss to turn on; eon,dvDS/dtTo turn on voltage drop losses; eIpeakReverse recovery losses for turning on the diode; eoff,diD/dtCurrent reduction loss to turn off; eoff,dvDS/dtTo turn off voltage rise losses.
During the on-state, the current rise time loss is shown as (12), and the voltage drop loss is shown as (13).
Figure BDA0003136309010000163
Figure BDA0003136309010000164
In the formula: i isLIs the load current; vDCIs the bus voltage; l isPIs the loop inductance. Further, σ is as shown in (14).
Figure BDA0003136309010000171
The current spikes provided by the literature are shown as (15) and the losses due to reverse recovery are shown as (16).
Figure BDA0003136309010000172
Figure BDA0003136309010000173
In the formula: qrrThe charge is recovered in the reverse direction for the diode.
The on-loss obtained according to (10), (12), (13) and (16) is shown in (17).
Figure BDA0003136309010000174
Similarly, the turn-off loss is as shown in (3-18).
Figure BDA0003136309010000175
As shown in (1) and (6), the first stage V is openedqd1，RGon1And shutting down the first phase Vqd4，RGoff1Respectively, influence the delay time tdAnd tsOf the main parameters.
From (17) and (18), the turn-on loss and the turn-on process voltage change rate dvDSDt, rate of change of current diDDt is related; turn-off loss and turn-off process voltage rate of change dvDSDt, rate of change of current diDThe ratio/dt is related.
From (2), the on-current change rate diDDt and turn-on process drive voltage Vqd2And a driving resistor RGon2(ii) related; the on-voltage change rate dv is known from (3) and (4)DSDt and turn-on process drive voltage Vqd2And a driving resistor RGon2(ii) related;
from (7) the off-voltage slope dvDSDt and turn-off process drive voltage Vqd4And a driving resistor RGoff2(ii) related; from (8) the current slope diDDt and turn-off process drive voltage Vqd4And a driving resistor RGoff2It is related.
Therefore, the main reason for the excessive turn-on loss and current spike is to reduce the turn-on speed in the turn-on current rising stage and the turn-on voltage falling stage, i.e. to reduce the driving voltage VGSI.e. Vqd2And increasing the drive resistance RGNamely RGon2. Similarly, the major reasons for the turn-off loss and voltage spike are to reduce the turn-off speed in the rise and fall phases of the turn-off voltage, i.e. to reduce the driving voltage VGSAnd increasing the drive resistance RGNamely RGoff2The driving voltage at this stage is selected to be 0V, soAs long as Q is turned on5And Q8The drive voltage V can be turned off at this stageGSIs 0V, the driving resistor R is turned offGIs RGoff2。
In order to take the relations among the switching time, the switching loss and the switching voltage and current spikes into consideration and seek the optimal driving effect, the calculation value shown as (19) is used for representing the switching-on driving effect; the off drive effect is represented by the magnitude of the calculated value as shown in (20). Drive effect Vyon、VyoffThe driving strategy with the smallest calculated value is called a comprehensive evaluation strategy, and the main purpose of the strategy is to balance the driving effect and achieve the best compromise among overvoltage, overcurrent and switching loss. Through the analysis, the best effect of driving the switch-on is that the switch-on time, the switch-on loss and the switch-on current peak reach the minimum value at the same time, namely VyonAt the minimum, and in the same way, the best effect of driving turn-off is that turn-off time, turn-off loss and turn-off voltage spike reach the minimum value at the same time, namely VyoffAnd minimum.
Vyon＝ΔID·td·Eon (19)
Vyoff＝ΔVDS·ts·Eoff (20)
Examples
In the experiment, the traditional driving mode is selected, namely the switching-on driving voltage is 18V, and the switching-on driving resistance is 30 omega; the result of the experiment with-5V turn-off voltage and 30 omega turn-off resistance was used as the object of comparison. Calculating the turn-on driving voltage to be 18V and the turn-on driving resistance to be 30 omega; the off-voltage is-5V, and the off-resistance is 30 omega. The calculation result is as follows: first stage of the opening process Δ t1Drive voltage Vqd1Is 20V, and drives the resistor RGon1Is 20 omega; second stage Δ t2Drive voltage Vqd2Is 18V, and drives the resistor RGon2Is 47 omega; third stage Δ t3Drive voltage Vqd3Is 20V, and drives the resistor RGon3Is 20 omega. Since the turn-off voltage of the paper is chosen to be-5V, the first phase of the turn-off process Δ t4Drive voltage Vqd4Is 5V or VGSis-5V, and drives the resistor RGoff1Is 20 omega; second stage Δ t5The driving voltage is 0V, and the driving resistor RGoff2Is 47 omega; third stage Δ t6Drive voltage Vqd4Is 5V or VGSis-5V, and drives the resistor RGoff3Is 20 omega.
After the result is calculated, the driving power supply V is controlled by the FPGAqd1、Vqd2、Vqd3、Vqd4Control is carried out to keep the experimental condition VDCThe test was carried out with 600V unchanged. The experimental result of the SiC MOSFET is shown in fig. 6, where PWM is a driving voltage logic signal loaded between the gate and the source of the SiC MOSFET and transmitted by an upper computer through an optical fiber. Switch-on time t of a switch-on processonOn-off loss EonPeak current Δ VDS、diD/dt、VyonAnd the turn-off time t of the turn-off processoffTurn-off loss EoffVoltage peak Δ ID、dvDS/dt、VyoffThe radar map of (2) is shown in fig. 7.
As shown in fig. 6 and 7, the blue waveform is a switching characteristic test waveform in which the conventional driving on driving voltage is +18V, the off driving voltage is-5V, and the on-off driving resistance is 30 Ω. The red waveform is that the turn-on driving voltage is +18V, the turn-off driving voltage is-5V, and the first stage R of the turn-on driving resistorGon1Is 20 omega, the second stage RGon2Is 47 omega, the third stage R Gon320 omega, the first stage R of the drive resistor is switched offGoff1Is 20 omega, the second stage RGoff2Is 47 omega, the third stage RGoff3The switching characteristic test waveform under the condition of 20 Ω. The green waveform is that the on-off driving resistance is 30 omega, the first stage V of the on-driving voltageqd1Is 20V, namely VGSIs 20V; second stage Vqd2Is 18V or VGSIs 18V; third stage Vqd3Is 20V, namely VGSIs 20V. First stage V of turn-off driving voltageqd4Is 5V or VGSis-5V; second stage VGSIs 0V; third stage Vqd4Is 5V or VGSThe test curve of the switching characteristic was set to-5V. Pink curve is openFirst stage R of driving resistorGon1Is 20 omega, the second stage RGon2Is 47 omega, the third stage R Gon320 omega, the first stage R of the drive resistor is switched offGoff1Is 20 omega, the second stage RGoff2Is 47 omega, the third stage RGoff3Is 20 omega and turns on the driving voltage in the first stage Vqd1Is 20V, namely VGSIs 20V, the second stage Vqd2Is 18V or VGSIs 18V, the third stage Vqd3Is 20V, namely VGSIs 20V. First stage V of turn-off driving voltageqd4Is 5V or VGSis-5V; second stage VGSIs 0V; third stage Vqd4Is 5V or VGSThe test curve of the switching characteristic was set to-5V. From the experimental results, the data are summarized in the following table 1 for the turn-on process and table 2 for the turn-off process.
TABLE 1 Effect of opening
Figure BDA0003136309010000191
TABLE 2 shut-off effect
Figure BDA0003136309010000192
Figure BDA0003136309010000201
As can be seen from the comparison of the experiments in fig. 6 and 7, compared with the conventional driving method, the continuously adjustable multi-level gate driving circuit can finely adjust the switching process, and effectively take switching time, switching loss, and switching voltage and current spikes into consideration. As can be seen from tables 1 and 2, compared with the conventional driving circuit, the continuously adjustable multi-level driving circuit has the advantages that the turn-on time is reduced by 400.6ns, the turn-on loss is reduced by 52.15%, and the current spike is reduced by 12A. The turn-off time is reduced by 118.0ns, the turn-off loss is reduced by 7.10%, the voltage spike is reduced by 60V, and the switching effect of the SiC MOSFET module is further optimized effectively.

Claims (10)

1. A SiC MOSFET module continuously adjustable multilevel driving circuit is characterized by comprising a control unit; the control unit is respectively connected with a multi-grade drive circuit and a continuous adjustable drive power supply, and the multi-grade drive circuit is connected with a power unit.
2. The SiC MOSFET module continuously tunable multilevel drive circuit of claim 1, wherein: the continuously adjustable multi-level driving circuit comprises four NMOS switching tubes, four PMOS switching tubes and four continuously adjustable driving power supplies Vqd1、Vqd2、Vqd3、Vqd4The combination realizes that the driving voltage resistance is continuously adjustable.
3. The SiC MOSFET module continuously tunable multilevel drive circuit of claim 1, wherein: the continuously adjustable driving power supply comprises a voltage setting module, the voltage setting module is connected with a control circuit, the control circuit is connected with a main circuit through a driving signal, a direct-current voltage output end of the main circuit is connected with a sampling circuit in parallel, the sampling circuit inputs direct-current voltage to a voltage-frequency conversion circuit, the voltage-frequency conversion circuit is connected with a frequency-voltage conversion circuit through an optical fiber, and the frequency-voltage conversion circuit is connected with the control circuit.
4. The SiC MOSFET module continuously tunable multilevel drive circuit of claim 1, wherein: the control circuit adopts FPGA to provide simple logic control.
5. The SiC MOSFET module continuously tunable multilevel drive circuit of claim 1, wherein: the turn-on process and the turn-off process of the driving circuit are divided into three stages, namely turn-on delay time of a first stage of the turn-on process, turn-on voltage drop, turn-on current rise and current peak of a second stage of the turn-on process, and enter a complete turn-on state of a third stage of the turn-on process; the first stage of the turn-off process is turned off for delay time, the second stage of the turn-off process is turned off for voltage rise, current drop and voltage spike, and the third stage of the turn-off process is turned on for complete turn-off.
6. A control method of a SiC MOSFET module continuously adjustable multilevel driving circuit is characterized in that the SiC MOSFET module continuously adjustable multilevel driving circuit is adopted according to claims 1-5, and the specific steps are as follows:
step 1: obtaining driving voltage, driving resistance, Miller capacitance and driving current parameters of the SiC MOSFET module of the new module by looking up a data manual corresponding to the new module;
step 2: performing a double-pulse experiment on the recommended value of the module on a double-pulse platform to obtain the opening time ton1Off time toff1On-off loss Eon1Turn-off loss Eoff1Turn-on current peak Δ IDOff voltage spike Δ VDS；
And step 3: calculating the driving voltage and the resistance { V } of the SiC MOSFET with the turn-on delay time less than the delay time of the module recommended value according to the data in the step 2qd1 RGon1}; calculating the driving voltage and the resistance { V) of the SiC MOSFET module with the turn-off delay time smaller than the delay time recommended by the merchantqd4 RGoff1}；
And 4, step 4: calculating turn-on loss and turn-off loss, assuming that the current slope and the voltage slope are linear changes, the turn-on loss is mainly generated by current rise, voltage drop and diode reverse recovery effect, and the turn-off loss is mainly generated by drain-source voltage VDSRise and drain current ID(ii) caused by a decline;
and 5: calculating the driving voltage and the resistance { V } of the current rise and the drain-source voltage slope, wherein the slope of the current rise and the drain-source voltage slope are smaller than the merchant recommended valueqd2 RGon2}；
Step 5.5: calculating the driving voltage and the resistance { V ] of the current drop and the drain-source voltage slope which are lower than the merchant recommended value and the off current drop and the drain-source voltage slopeGSRGoff2}；
Step 6: opening deviceThe third stage of the turn-on process is that the SiC MOSFET module enters a complete turn-on stage, and the drive voltage v is turned onGSIs a Vqd3Driving resistance RGIs RGon3By increasing Vqd3Or decrease RGon3The speed of the SiC MOSFET module entering complete turn-on is increased, and the turn-on time is further shortened;
step 6.6: the third stage of the turn-off process is that the SiC MOSFET module enters a complete turn-off stage, in which the drive voltage v is turned offGSIs a Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The speed of the SiC MOSFET module entering complete turn-off is increased, and the turn-on time is further shortened;
and 7: and calculating the turn-on time and the turn-off time of the SiC MOSFET module.
And 8: finding out the optimal driving effect of the turn-on process and the turn-off process by adopting a comprehensive evaluation strategy, wherein the optimal turn-on effect of the turn-on process is the turn-on time tonOn-off loss EonTurn-on current peak Δ IDAt the same time, the minimum; the best evaluation mode of the turn-off process is the turn-off time t of the SiC MOSFET moduleoffOff voltage spike Δ VDSAnd turn-off loss EoffAt the same time, the minimum; i.e. Vyon、VyoffMinimum;
Vyon＝ΔID·td·Eon (3-19)
Vyoff＝ΔVDS·ts·Eoff (3-20)
and step 9: the optimal driving voltage and driving resistance of each stage can be obtained through the processes, so that an optimal driving scheme is obtained, a double-pulse experiment is carried out on the action time of the second stage by taking the driving voltage and the driving resistance of the second stage as parameters, the action time of the second stage is read and then set, and similarly, the action time of the third stage is determined through the method.
7. The SiC MOSFET module of claim 6The control method of the continuously adjustable multi-level driving circuit is characterized in that in the step 3, the turn-on delay time t of the SiC MOSFET moduledComprises the following steps:
Figure FDA0003136309000000041
in the formula: rGon1Switching on a driving resistor for the first stage of the switching-on process; cGSIs a gate-source capacitance; cGDIs a gate-drain capacitance; vqd1A first stage drive voltage for a turn-on process; vTTo turn on the threshold voltage; vGSoffThe voltage is driven for the off state of the SiC MOSFET module.
Turn-off delay time t of SiC MOSFET modules。
Figure FDA0003136309000000042
In the formula: rGoff1The driving resistor is turned off for the first stage of the turn-off process; vqd4Driving voltage for the first stage of the turn-off process; vGSonThe voltage is driven for the SiC MOSFET module on state.
8. The method for controlling the SiC MOSFET module continuously tunable multilevel driving circuit according to claim 6, wherein in the step 4, the turn-on loss E isonAnd turn-off loss EoffThe calculation method specifically comprises the following steps:
Figure FDA0003136309000000043
Figure FDA0003136309000000044
in the formula: eon,diD/dtCurrent rise loss to turn on;
Figure FDA0003136309000000045
to turn on voltage drop losses;
Figure FDA0003136309000000046
reverse recovery losses for turning on the diode;
Figure FDA0003136309000000047
current reduction loss to turn off;
Figure FDA0003136309000000048
to turn off voltage rise losses.
During the opening process, the current rise time loss is shown as (3-12), and the voltage drop loss is shown as (3-13).
Figure FDA0003136309000000051
Figure FDA0003136309000000052
In the formula: i isLIs the load current; vDCIs the bus voltage; l isPIs the loop inductance. Moreover, σ is as shown in (3-14).
Figure FDA0003136309000000053
The current spikes are shown in (3-15), and the losses due to reverse recovery are shown in (3-16):
Figure FDA0003136309000000054
Figure FDA0003136309000000055
in the formula: qrrThe charge is recovered in the reverse direction for the diode.
The turn-on loss according to (3-10), (3-12), (3-13), and (3-16) is as shown in (3-17):
Figure FDA0003136309000000056
similarly, turn-off loss EoffThe calculation method comprises the following steps:
Figure FDA0003136309000000057
。
9. the method for controlling the SiC MOSFET module continuously tunable multilevel driving circuit according to claim 6, wherein in the step 5, the method for calculating the current rising slope is:
Figure FDA0003136309000000061
in the formula: gmIs the transconductance of the SiC MOSFET module; vqd2Driving voltage for the second stage of the turn-on process; i isDThe drain current rating; cissA SiC MOSFET module input capacitor; rGon2The drive resistor is turned on for the second stage of the turn-on process.
Drive current IGAnd a drain-source voltage vDSThe calculation method of the slope comprises the following steps:
Figure FDA0003136309000000062
Figure FDA0003136309000000063
in the formula: vGmilIs the Miller voltage; i isGDriving a current for the driver.
Calculating the off-current falling slope, the current falling with the drain-source voltage slope smaller than the merchant recommended value, the driving voltage of the drain-source voltage slope and the resistance { V } according to (3-7) and (3-8)GSRGoff2}; the voltage slope is shown as (3-7) and the current slope is shown as (3-8).
Figure FDA0003136309000000064
Figure FDA0003136309000000065
This patent drives the voltage V at this stageGSSelect 0V, so as to turn on Q5And Q8The drive voltage V can be turned off at this stageGSIs 0V, the driving resistor R is turned offGIs RGoff2。
10. The method for controlling the SiC MOSFET module continuously tunable multilevel driving circuit according to claim 6, wherein in the step 7, the SiC MOSFET module on-time is:
ton＝Δt1+Δt2+Δt3 (3-5)
in the formula: Δ t1The first stage time of the switching-on process of the SiC MOSFET module; Δ t2The second stage time of the switching-on process of the SiC MOSFET module; Δ t3And carrying out third-stage time for the turn-on process of the SiC MOSFET module.
Driving voltage v at third stage of turn-off processGSis-Vqd4Driving resistance RGIs RGoff3By increasing Vqd4Or decrease RGoff3The turn-off speed of the SiC MOSFET module can be increased, and the turn-off time is further shortened. Thus SiC MOSFET module offThe off time is as follows:
toff＝Δt4+Δt5+Δt6 (3-9)
in the formula: Δ t4The first stage time of the turn-off process of the SiC MOSFET module is obtained; Δ t5The second stage time of the turn-off process of the SiC MOSFET module; Δ t6And the third stage time of the turn-off process of the SiC MOSFET module.
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