CN116827095A - SiC MOSFET driving circuit and driving method - Google Patents

SiC MOSFET driving circuit and driving method Download PDF

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Publication number
CN116827095A
CN116827095A CN202310599152.7A CN202310599152A CN116827095A CN 116827095 A CN116827095 A CN 116827095A CN 202310599152 A CN202310599152 A CN 202310599152A CN 116827095 A CN116827095 A CN 116827095A
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China
Prior art keywords
switch tube
circuit
resistor
lower switch
triode
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CN202310599152.7A
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Chinese (zh)
Inventor
孟润泉
王磊
郭卓燕
韩肖清
王鹏
秦文萍
贾燕冰
任春光
张佰富
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Taiyuan University of Technology
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Taiyuan University of Technology
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Priority to CN202310599152.7A priority Critical patent/CN116827095A/en
Publication of CN116827095A publication Critical patent/CN116827095A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H02M1/385—Means for preventing simultaneous conduction of switches with means for correcting output voltage deviations introduced by the dead time
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a SiCNOSFET driving circuit, and relates to the field of electronic driving. The SiCNOSFET driving circuit includes: synchronous Buck circuit, RC voltage dividing circuit, grid-source electrode equivalent impedance regulating circuit, output filter circuit, load resistor R, direct current power supply and upper switch tube M on bridge arm of bridge circuit 1 And lower switch tube M 2 . According to the invention, the RC voltage dividing circuit is connected in parallel between the grid and the source of the SiC MOSFET to provide turn-off negative pressure, the variable capacitance structure of the transistor series capacitance is added in the grid-source equivalent impedance adjusting circuit, and the switching modes 1 to 8 of the SiCMOSFET driving circuit are controlled, so that crosstalk voltage can be effectively restrained at the same time without increasing switching time.

Description

SiC MOSFET driving circuit and driving method
Technical Field
The invention relates to the technical field of electronic driving, in particular to a SiC MOSFET driving circuit and a driving method.
Background
In recent years, with the increasing abundance of power semiconductor device applications, the performance requirements of power semiconductor devices are continuously improved, and Si-based power semiconductor devices cannot meet the requirements. A wide band gap semiconductor device typified by a SiC MOSFET (silicon carbide metal-oxide semiconductor field effect transistor) has a lower on-resistance and a faster switching speed, and is more suitable for use in a high-frequency power electronic converter. However, in practical applications, the increase in switching frequency means greater dv/dt (voltage rate of change) and di/dt (current rate of change), so that parasitic parameters with insignificant low frequency effects generate voltage spikes that can impair the operation of the system, and when applied in bridge circuits, can generate severe crosstalk voltages that disrupt the stable operation of the circuit. The threshold voltage and the maximum negative voltage that can be tolerated for SiC MOSFETs are small. When the forward crosstalk voltage is too large, the device is led to be switched on by mistake, so that a bridge arm is led to be directly connected, and the device is damaged; when the negative crosstalk voltage exceeds the maximum sustainable negative voltage of the SiC MOSFET, the power device may be damaged.
The current drive designs for crosstalk suppression are mainly divided into two aspects: the first is to adjust the equivalent impedance between the grid sources, and the second is to adopt a negative pressure turn-off method. However, the existing SiC MOSFET crosstalk suppression methods are mostly at the cost of increasing switching losses, switching delays, or increasing control complexity. Therefore, the analysis of the formation cause of the bridge arm crosstalk phenomenon, and the design of the novel SiC MOSFET driving circuit capable of inhibiting the crosstalk voltage have important significance for improving the working reliability of the converter.
Disclosure of Invention
In view of the above-mentioned problems in the background art, the present invention provides a driving circuit and a driving method for a SiC MOSFET to suppress crosstalk voltage without increasing switching time.
In order to achieve the above object, the present invention provides the following solutions:
the invention provides a SiC MOSFET driving circuit, comprising: synchronous Buck circuit, RC voltage dividing circuit, grid-source electrode equivalent impedance regulating circuit, output filter circuit, load resistor R, direct current power supply and upper switch tube M on bridge arm of bridge circuit 1 And lower switch tube M 2 The method comprises the steps of carrying out a first treatment on the surface of the Upper switch tube M 1 And lower switch tube M 2 Are SiC MOSFETs; the RC voltage dividing circuit comprises a resistor R 1_H Resistance R 2_H Capacitance C 1_H Resistance R 1_L Resistance R 2_L Capacitor C 1_L The method comprises the steps of carrying out a first treatment on the surface of the The grid-source equivalent impedance adjusting circuit comprises a resistor R 3_H Triode Q 1_H Diode D 1_H Capacitance C 2_H Resistance R 3_L Triode Q 1_L Diode D 1_L Capacitor C 2_L The method comprises the steps of carrying out a first treatment on the surface of the The output filter circuit comprises a filter inductor L and a filter capacitor C;
wherein the resistance R 1_H And a capacitor C 1_H One end of the upper tube synchronous driving signal S is connected with the synchronous Buck circuit 1 The method comprises the steps of carrying out a first treatment on the surface of the Triode Q 1_H The base electrodes of (a) are respectively connected with the resistor R 1_H The other end of (C) and the capacitance C 1_H The other end of (C) and the resistor R 2_H One end of (2) and resistor R 3_H Is a member of the group; resistor R 3_H The other ends of (a) are respectively connected with triode Q 1_H Emitter, diode D of (2) 1_H Is connected with the negative electrode of the upper switch tube M 1 A gate electrode of (a); triode Q 1_H The collector of (a) is connected with diode D 1_H Positive electrode of (a) and capacitor C 2_H Is a member of the group; upper switch tube M 1 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_H The other end of (C) and the capacitance C 2_H The other end of (C) is provided with a lower switch tube M 2 One end of the filter inductor L; the other end of the filter inductance L is respectively connected with one end of the filter capacitance C and the load resistance RIs a member of the group; upper switch tube M 1 The drain electrode of the (a) is connected with the anode of the direct current power supply;
resistor R 1_L And a capacitor C 1_L One end of the lower tube synchronous driving signal S2 is connected with a synchronous Buck circuit; triode Q 1_L The base electrodes of (a) are respectively connected with the resistor R 1_L The other end of (C) and the capacitance C 1_L The other end of (C) and the resistor R 2_L One end of (2) and resistor R 3_L Is a member of the group; resistor R 3_L The other ends of (a) are respectively connected with triode Q 1_L Emitter, diode D of (2) 1_L Is connected with the negative electrode of the lower switch tube M 2 A gate electrode of (a); triode Q 1_L The collectors of (a) are respectively connected with a diode D 1_L Positive electrode of (a) and capacitor C 2_L Is a member of the group; lower switch tube M 2 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_L The other end of (C) and the capacitance C 2_L The other end of the filter capacitor C, the other end of the load resistor R, and the negative electrode of the dc power supply.
Optionally, triode Q 1_H And triode Q 1_L All are PNP type triode.
Optionally, diode D 1_H And diode D 1_L Are zener diodes.
A SiC MOSFET driving method is applied to the SiC MOSFET driving circuit; the SiC MOSFET driving method comprises the following steps:
stage 1 of working mode, upper switch tube M 1 Completely turn off, lower switch tube M 2 Fully conducting, down tube driving voltage V 2 Is a lower switch tube M 2 Gate-source capacitance C of (2) gsL Charging while driving current through capacitor C 1_L Resistance R 1_L And resistance R 2_L An RC voltage dividing circuit is composed of a capacitor C 1_L Charging; charging current flows through resistor R 3_L Due to unsatisfied triode Q 1_L Is not operated;
working mode 2 stage, lower switch tube M 2 Start to turn off, upper switch tube M 1 Still completely turn off, capacitor C 1_L Is a lower switch tube M 2 Providing turn-off negative pressure, lower switchTube M 2 The channel and its body diode are commutated;
working mode 3 stage, upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 4 stage, upper switch tube M 1 Start to conduct and drive voltage V of upper tube 1 For upper switch tube M 1 Gate-source capacitance C of (2) gsH Charging while driving current through capacitor C 1_H Resistance R 1_H And resistance R 2_H An RC voltage dividing circuit is composed of a capacitor C 1_H Charging; lower switch tube M 2 The crosstalk suppressing circuit of (1) starts to operate, first, the capacitor C 1_L The working mode 1 is in a full charge state and is a lower switch tube M 2 Providing turn-off negative pressure to accelerate the lower switch tube M 2 Is a shutdown procedure of (1); next, upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly descend and drop down the switch tube M 2 Drain-source voltage V of (2) dsL Rapidly rise and lower switch tube M 2 Gate-drain capacitance C of (C) gdL Start charging, charging current C gdL dV dsL /dt flow-through resistor R 3_L Generates a right positive left negative voltage drop to make the triode Q 1_L Conduction and capacitance C 2_L The access circuit absorbs charging current; the combined action of the two inhibits the lower switch tube M 2 Is a gate-source forward crosstalk voltage; triode Q 1_L After conduction, the charging current is absorbed, so that the resistor R 3_L Transistor Q when the voltage at both ends is less than 0.7V 1_L Does not satisfy the conduction condition, so that triode Q 1_L Turn off, capacitance C 2_L Disconnecting from the drive circuit;
working mode 5 stage, upper switch tube M 1 Fully conducting, lower switch tube M 2 Fully turned off, the load current flows through the upper switch tube M 1 A channel of (2);
working mode 6 stage, upper switch tube M 1 Start to turn off, at this time, switch tube M is turned on 1 Channel of (2) and lower switch tube M 2 Is commutated by the body diode of (2), upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly rise and lower switch tube M 2 Drain-source voltage V of (2) dsL Rapidly descend and drop down the switch tube M 2 Gate-drain capacitance C of (C) gdL Start discharging, discharge current passes through capacitor C 2_L And diode D 1_L A branch circuit formed by the two circuits reduces the lower switch tube M 2 The equivalent impedance of the gate-source drive loop of (2) suppresses the lower switch tube M 2 Gate-source negative crosstalk voltage of (a);
in the working mode 7 stage, after the current conversion is finished, the load current passes through the lower switch tube M 2 Follow current of body diode of (1), upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 8 stage, lower switch tube M 2 Starting to conduct and feeding the switch tube M 1 Maintain the off state, lower switch tube M 2 Channel of (2) and lower switch tube M 2 Is used for converting the current of the body diode; after the current conversion is finished, the working mode is converted into a working mode 1.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a SiC MOSFET driving circuit and a driving method, wherein the SiC MOSFET driving circuit comprises: synchronous Buck circuit, RC voltage dividing circuit, grid-source electrode equivalent impedance regulating circuit, output filter circuit, load resistor R, direct current power supply and upper switch tube M on bridge arm of bridge circuit 1 And lower switch tube M 2 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the RC voltage dividing circuit comprises a resistor R 1_H Resistance R 2_H Capacitance C 1_H Resistance R 1_L Resistance R 2_L Capacitor C 1_L The method comprises the steps of carrying out a first treatment on the surface of the The grid-source equivalent impedance adjusting circuit comprises a resistor R 3_H Triode Q 1_H Diode D 1_H Capacitance C 2_H Resistance R 3_L Triode Q 1_L Diode D 1_L Capacitor C 2_L The method comprises the steps of carrying out a first treatment on the surface of the The output filter circuit comprises a filter inductance L and a filter capacitance C. The invention provides turn-off negative pressure by connecting an RC voltage dividing circuit in parallel between the grid and the source of the SiC MOSFET, adds a variable capacitance structure of a transistor series capacitance in a grid-source equivalent impedance adjusting circuit, and controls the switching modes 1 to 8 of the SiC MOSFET driving circuitThe crosstalk voltage can be effectively suppressed without increasing the switching time.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a driving circuit of a SiC MOSFET according to the present invention;
FIG. 2 is a waveform diagram illustrating the operation of the SiC MOSFET driving circuit of the present invention;
FIG. 3 is a schematic diagram of the working mode 1 of the SiC MOSFET driving circuit of the invention;
FIG. 4 is a schematic diagram of the mode 2 of operation of the SiC MOSFET drive circuit of the present invention;
FIG. 5 is a schematic diagram of the mode 3 of operation of the SiC MOSFET drive circuit of the present invention;
FIG. 6 is a schematic diagram of the mode 4 of operation of the SiC MOSFET drive circuit of the present invention;
FIG. 7 is a schematic diagram of the mode 5 of operation of the SiC MOSFET drive circuit of the present invention;
FIG. 8 is a schematic diagram of the mode 6 of operation of the SiC MOSFET drive circuit of the present invention;
FIG. 9 is a schematic diagram of an operating mode 7 of the SiC MOSFET drive circuit of the present invention;
FIG. 10 is a schematic diagram of an operating mode 8 of the SiC MOSFET drive circuit of the present invention;
FIG. 11 is a graph comparing waveforms of upper tube gate-source voltage and lower tube forward crosstalk voltage during an upper tube turn-on phase; wherein fig. 11 (a) is a waveform diagram of the gate-source voltage of the upper tube over time, and fig. 11 (b) is a waveform diagram of the gate-source voltage of the lower tube over time;
FIG. 12 is a graph comparing waveforms of upper tube gate-source voltage and lower tube negative crosstalk voltage at the upper tube turn-off stage; wherein fig. 12 (a) is a waveform diagram of the gate-source voltage of the upper tube over time, and fig. 12 (b) is a waveform diagram of the gate-source voltage of the lower tube over time.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a SiC MOSFET driving circuit which can inhibit crosstalk voltage without increasing switching time.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in FIG. 1, the SiC MOSFET driving circuit of the invention is a driven SiC MOSFET, namely M 1 And M 2 The two switching tubes are respectively an upper switching tube and a lower switching tube on a certain bridge arm of the bridge circuit. R is R g(in) C is the internal resistance of the grid electrode of the switch tube SiC MOSFET gsn 、C gdn 、C dsn The grid-source capacitance, the grid-drain capacitance and the drain-source capacitance of the switching tube SiC MOSFET are respectively, wherein n=L and H. V (V) DC Is a direct current power supply voltage. L and C are respectively an output filter inductance and a filter capacitance, and R is a load resistance. Parameter with angle sign of H and upper pipe M 1 Related to the parameters with L-angle and the down tube M 2 Related to the following. The driving circuit comprises the following three parts: the first part is composed of a resistor R 1_n Resistance R 2_n Capacitance C 1_n The RC voltage dividing circuit is formed for generating negative voltage turn-off; the second part is composed of resistor R 3_n Triode Q 1_n Diode D 1_n Capacitance C 2_n The equivalent impedance adjusting circuit of the grid and the source electrode is formed and is used for adjusting the equivalent impedance of the grid and the source electrode; the third part is driven SiC MOSFET, i.e. switch tube M 1 And M 2 。
Referring to fig. 1, the SiC MOSFET driving circuit of the present invention specifically includes: synchronous Buck circuit, RC voltage dividing circuit,Gate-source equivalent impedance adjusting circuit, output filter circuit, load resistor R, direct current power supply and upper switch tube (upper tube for short) M on bridge arm of bridge circuit 1 And a lower switch tube (lower tube for short) M 2 . Wherein the switch tube M is arranged 1 And lower switch tube M 2 Are SiC MOSFETs and are positioned on a certain bridge arm of the bridge circuit. The RC voltage dividing circuit specifically comprises a resistor R 1_H Resistance R 2_H Capacitance C 1_H Resistance R 1_L Resistance R 2_L Capacitor C 1_L . The grid-source equivalent impedance adjusting circuit specifically comprises a resistor R 3_H Triode Q 1_H Diode D 1_H Capacitance C 2_H Resistance R 3_L Triode Q 1_L Diode D 1_L Capacitor C 2_L . The output filter circuit specifically comprises a filter inductor L and a filter capacitor C.
As shown in fig. 1, the resistor R 1_H And a capacitor C 1_H One end of the upper tube synchronous driving signal S is connected with the synchronous Buck circuit 1 The method comprises the steps of carrying out a first treatment on the surface of the Triode Q 1_H The base electrodes of (a) are respectively connected with the resistor R 1_H The other end of (C) and the capacitance C 1_H The other end of (C) and the resistor R 2_H One end of (2) and resistor R 3_H Is a member of the group; resistor R 3_H The other ends of (a) are respectively connected with triode Q 1_H Emitter, diode D of (2) 1_H Is connected with the negative electrode of the upper switch tube M 1 A gate electrode of (a); triode Q 1_H The collector of (a) is connected with diode D 1_H Positive electrode of (a) and capacitor C 2_H Is a member of the group; upper switch tube M 1 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_H The other end of (C) and the capacitance C 2_H The other end of (C) is provided with a lower switch tube M 2 One end of the filter inductor L; the other end of the filter inductor L is respectively connected with one end of the filter capacitor C and one end of the load resistor R; upper switch tube M 1 The drain electrode of the capacitor is connected with the positive electrode of the direct current power supply.
As shown in fig. 1, the resistor R 1_L And a capacitor C 1_L One end of the lower tube synchronous driving signal S2 is connected with a synchronous Buck circuit; triode Q 1_L The base electrodes of (a) are respectively connected with the resistor R 1_L The other end of (C) and the capacitance C 1_L The other end of (C) and the resistor R 2_L One end of (2) and resistor R 3_L Is a member of the group; resistor R 3_L The other ends of (a) are respectively connected with triode Q 1_L Emitter, diode D of (2) 1_L Is connected with the negative electrode of the lower switch tube M 2 A gate electrode of (a); triode Q 1_L The collectors of (a) are respectively connected with a diode D 1_L Positive electrode of (a) and capacitor C 2_L Is a member of the group; lower switch tube M 2 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_L The other end of (C) and the capacitance C 2_L The other end of the filter capacitor C, the other end of the load resistor R, and the negative electrode of the dc power supply.
Wherein, triode Q 1_H And triode Q 1_L PNP type triode is adopted. Diode D 1_H And diode D 1_L Zener diodes are used. The synchronous Buck circuit may be implemented using a driver chip (driver ic).
The waveform of the related variable of the SiC MOSFET driving circuit in one switching period is shown in fig. 2, and the corresponding working mode diagrams are shown in fig. 3 to 10. FIG. 2 is a graph with time on the abscissa and voltage on the ordinate, where S 1 、S 2 Respectively control upper tube M in synchronous Buck circuit 1 Lower tube M 2 V of the synchronous drive signals of (a) gsH 、V gsL Respectively M 1 、M 2 Gate-source voltage of V dsH 、V dsL Respectively M 1 、M 2 Drain-source voltage of V 1 、V 2 Respectively M 1 、M 2 V of (2) miller Is M 1 、M 2 Is the Miller voltage of V th Is M 1 、M 2 Is set to be a turn-on voltage of the battery.
The working modes of the SiC MOSFET driving circuit are described as follows:
working modality 1[t 0 ,t 1 ]: the working mode schematic diagram of the stage is shown in FIG. 3, and the upper tube M at the stage 1 Completely shut off, down tube M 2 Fully on, drive voltage V 2 Is M 2 Gate-source capacitance C of (2) gsL Charging the same asThe time driving current flows through C 1_L 、R 1_L 、R 2_L An RC voltage dividing circuit is formed as C 1_L And (5) charging. Charging current flows through R 3_L Due to not meeting Q 1L Is not operated.
Working modality 2[t 1 ,t 2 ]The working mode schematic diagram of the stage is shown in figure 4, t 1 Time of day M 2 Start to turn off, upper bridge arm M 1 Still completely turn off C 1_L Is M 2 Providing a turn-off negative pressure, M 2 And its body diode.
Working modality 3[t 2 ,t 3 ]The working mode schematic diagram of the stage is shown in figure 5, stage M 1 、M 2 All are in the off state, and the bridge arm is in the dead zone state.
Working modality 4[t 3 ,t 4 ]The working mode schematic diagram of the stage is shown in figure 6, t 3 Time of day M 1 Start to turn on V 1 For C gsH Charging while driving current flow through C 1_H 、R 1_H 、R 2_H The voltage dividing circuit is a capacitor C 1_H Charging at stage M 2 The crosstalk suppressing circuit of (1) starts to operate, first, the capacitor C 1_L Through the working mode 1 being in a full charge state, can be M 2 Providing turn-off negative pressure to accelerate M 2 Is a shutdown procedure of (1); next, at this stage, V dsH Rapidly decline, V dsL Rapidly rise to C gdL Start charging, charging current C gdL dV dsL Flow through R/dt 3_L Creating a right positive left negative pressure drop such that Q 1_L Conduction and capacitance C 2_L An access circuit for absorbing the charging current; the combined action of the two inhibits M 2 Is a gate-source forward crosstalk voltage; q (Q) 1_L After conduction, the charging current is absorbed so that R 3_L Q when the voltage at two ends is less than 0.7V 1_L Does not satisfy the conduction condition, so that Q 1_L Shut off, C 2_L Disconnected from the drive circuit.
Working modality 5 (t) 4 ,t 5 ) The working mode schematic diagram of the stage is shown in figure 7, M 1 Fully conducting, M 2 Fully off, load current flows through M 1 Is provided.
Working modality 6 (t) 5 ,t 6 ) The working mode schematic diagram of the stage is shown in figure 8, M 1 Start to turn off when M 1 Channel and M of (2) 2 V is converted by the body diode of (2) dsH Rapidly rise, V dsL Rapidly decline, C gdL Start discharging, discharge current passes through C 2_L -D 1_L Branch, reduce M 2 The equivalent impedance of the gate-source drive loop of (2) suppresses M 2 Is a gate-source negative crosstalk voltage.
Mode of operation 7 (t 6 ,t 7 ) The working mode diagram of the stage is shown in figure 9, and after the commutation is finished, the load current passes through M 2 Free-wheeling of body diode, M 1 、M 2 All are in the off state, and the bridge arm is in the dead zone state.
Working modality 8 (t) 7 ,t 8 ) The working mode schematic diagram at this stage is shown in figure 10, M 2 Start to turn on M 1 Maintain the off state M 2 Channel and M of (2) 2 Is used for the body diode commutation.
After the commutation is finished, the working mode is converted into a switching mode 1, and the following working mode is similar to the above, and is not repeated here.
According to the invention, the RC voltage dividing circuit is connected in parallel between the grid and the source of the SiC MOSFET to provide turn-off negative pressure, and the variable capacitance structure of the transistor series capacitance is added in the grid-source equivalent impedance adjusting circuit, so that the descriptions of the switching mode 4 and the switching mode 6 are combined, and the SiC MOSFET driving circuit and the method can effectively inhibit crosstalk voltage without increasing the switching time.
In FIG. 11, the upper tube M is compared 1 When the drive circuit is turned on, the gate-source voltages of the upper and lower switching tubes of the traditional drive circuit and the improved SiC MOSFET drive circuit (abbreviated as an improved drive circuit in the figure) are high; fig. 11 (a) shows the gate-source voltage of the upper tube, and fig. 11 (b) shows the gate-source voltage of the lower tube. As can be seen from fig. 11, the improved SiC MOSFET driving circuit of the present invention suppresses both the positive crosstalk voltage and the negative crosstalk voltage, and has noThe turn-on time of the upper tube is sacrificed.
In fig. 12, the gate-source voltages of the upper and lower switching tubes of the conventional drive circuit and the improved SiC MOSFET drive circuit of the present invention are compared when the upper tube is turned off; fig. 12 (a) shows the gate-source voltage of the upper tube, and fig. 12 (b) shows the gate-source voltage of the lower tube. As can be seen from fig. 12, the improved SiC MOSFET drive circuit of the present invention greatly suppresses negative crosstalk voltages; meanwhile, the improved SiC MOSFET driving circuit also shortens the turn-off time of the upper tube.
Based on the SiC MOSFET driving circuit, the invention also provides a SiC MOSFET driving method, which comprises the following steps:
stage 1 of working mode, upper switch tube M 1 Completely turn off, lower switch tube M 2 Fully conducting, down tube driving voltage V 2 Is a lower switch tube M 2 Gate-source capacitance C of (2) gsL Charging while driving current through capacitor C 1_L Resistance R 1_L And resistance R 2_L An RC voltage dividing circuit is composed of a capacitor C 1_L Charging; charging current flows through resistor R 3_L Due to unsatisfied triode Q 1L Is not operated;
working mode 2 stage, lower switch tube M 2 Start to turn off, upper switch tube M 1 Still completely turn off, capacitor C 1_L Is a lower switch tube M 2 Providing turn-off negative pressure, lower switch tube M 2 The channel and its body diode are commutated;
working mode 3 stage, upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 4 stage, upper switch tube M 1 Start to conduct and drive voltage V of upper tube 1 For upper switch tube M 1 Gate-source capacitance C of (2) gsH Charging while driving current through capacitor C 1_H Resistance R 1_H And resistance R 2_H An RC voltage dividing circuit is composed of a capacitor C 1_H Charging; lower switch tube M 2 The crosstalk suppressing circuit of (1) starts to operate, first, the capacitor C 1_L The working mode 1 is in a full charge state, is a lower switchTube M 2 Providing turn-off negative pressure to accelerate the lower switch tube M 2 Is a shutdown procedure of (1); next, upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly descend and drop down the switch tube M 2 Drain-source voltage V of (2) dsL Rapidly rise and lower switch tube M 2 Gate-drain capacitance C of (C) gdL Start charging, charging current C gdL dV dsL /dt flow-through resistor R 3_L Generates a right positive left negative voltage drop to make the triode Q 1_L Conduction and capacitance C 2_L The access circuit absorbs charging current; the combined action of the two inhibits the lower switch tube M 2 Is a gate-source forward crosstalk voltage; triode Q 1_L After conduction, the charging current is absorbed, so that the resistor R 3_L Transistor Q when the voltage at both ends is less than 0.7V 1_L Does not satisfy the conduction condition, so that triode Q 1_L Turn off, capacitance C 2_L Disconnecting from the drive circuit;
working mode 5 stage, upper switch tube M 1 Fully conducting, lower switch tube M 2 Fully turned off, the load current flows through the upper switch tube M 1 A channel of (2);
working mode 6 stage, upper switch tube M 1 Start to turn off, at this time, switch tube M is turned on 1 Channel of (2) and lower switch tube M 2 Is commutated by the body diode of (2), upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly rise and lower switch tube M 2 Drain-source voltage V of (2) dsL Rapidly descend and drop down the switch tube M 2 Gate-drain capacitance C of (C) gdL Start discharging, discharge current passes through capacitor C 2_L And diode D 1_L A branch circuit formed by the two circuits reduces the lower switch tube M 2 The equivalent impedance of the gate-source drive loop of (2) suppresses the lower switch tube M 2 Gate-source negative crosstalk voltage of (a);
in the working mode 7 stage, after the current conversion is finished, the load current passes through the lower switch tube M 2 Follow current of body diode of (1), upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 8 stage, lower switch tube M 2 Starting to conduct and feeding the switch tube M 1 HoldingOff state, lower switch tube M 2 Channel of (2) and lower switch tube M 2 Is used for converting the current of the body diode; after the current conversion is finished, the working mode is converted into a working mode 1.
Compared with the traditional drive circuit, the SiC MOSFET drive circuit and the method effectively inhibit positive crosstalk voltage and negative crosstalk voltage without increasing the switching time, and the devices used by the drive circuit are all passive devices, so that the drive circuit is simple to control and easy to realize, and has wide application prospect.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.

Claims (6)

1. A SiC MOSFET driving circuit, characterized by comprising: synchronous Buck circuit, RC voltage dividing circuit, grid-source electrode equivalent impedance regulating circuit, output filter circuit, load resistor R, direct current power supply and upper switch tube M on bridge arm of bridge circuit 1 And lower switch tube M 2 The method comprises the steps of carrying out a first treatment on the surface of the Upper switch tube M 1 And lower switch tube M 2 Are SiC MOSFETs; the RC voltage dividing circuit comprises a resistor R 1_H Resistance R 2_H Capacitance C 1_H Resistance R 1_L Resistance R 2_L Capacitor C 1_L The method comprises the steps of carrying out a first treatment on the surface of the The grid-source equivalent impedance adjusting circuit comprises a resistor R 3_H Triode Q 1_H Diode D 1_H Capacitance C 2_H Resistance R 3_L Triode Q 1_L Diode D 1_L Capacitor C 2_L The method comprises the steps of carrying out a first treatment on the surface of the The output filter circuit comprises a filter inductor L and a filter capacitor C;
wherein the resistance R 1_H And a capacitor C 1_H One end of the upper tube synchronous driving signal S is connected with the synchronous Buck circuit 1 The method comprises the steps of carrying out a first treatment on the surface of the Triode Q 1_H The base electrodes of (a) are respectively connected with the resistor R 1_H The other end of (C) and the capacitance C 1_H The other end of (C) and the resistor R 2_H One end of (2) and resistor R 3_H Is a member of the group; resistor R 3_H The other ends of (a) are respectively connected with triode Q 1_H Emitter, diode D of (2) 1_H Is connected with the negative electrode of the upper switch tube M 1 A gate electrode of (a); triode Q 1_H The collector of (a) is connected with diode D 1_H Positive electrode of (a) and capacitor C 2_H Is a member of the group; upper switch tube M 1 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_H The other end of (C) and the capacitance C 2_H The other end of (C) is provided with a lower switch tube M 2 One end of the filter inductor L; the other end of the filter inductor L is respectively connected with one end of the filter capacitor C and one end of the load resistor R; upper switch tube M 1 The drain electrode of the (a) is connected with the anode of the direct current power supply;
resistor R 1_L And a capacitor C 1_L One end of the lower tube synchronous driving signal S2 is connected with a synchronous Buck circuit; triode Q 1_L The base electrodes of (a) are respectively connected with the resistor R 1_L The other end of (C) and the capacitance C 1_L The other end of (C) and the resistor R 2_L One end of (2) and resistor R 3_L Is a member of the group; resistor R 3_L The other ends of (a) are respectively connected with triode Q 1_L Emitter, diode D of (2) 1_L Is connected with the negative electrode of the lower switch tube M 2 A gate electrode of (a); triode Q 1_L The collectors of (a) are respectively connected with a diode D 1_L Positive electrode of (a) and capacitor C 2_L Is a member of the group; lower switch tube M 2 The source electrodes of the (B) are respectively connected with a synchronous Buck circuit and a resistor R 2_L The other end of (C) and the capacitance C 2_L The other end of the filter capacitor C, the other end of the load resistor R, and the negative electrode of the dc power supply.
2. The SiC MOSFET driving circuit of claim 1, wherein transistor Q 1_H And triode Q 1_L All are PNP type triode.
3. The SiC MOSFET driving circuit of claim 1, wherein diode D 1_H And diode D 1_L Are zener diodes.
4. A SiC MOSFET driving method, characterized in that the SiC MOSFET driving method is applied to the SiC MOSFET driving circuit of claim 1; the SiC MOSFET driving method comprises the following steps:
stage 1 of working mode, upper switch tube M 1 Completely turn off, lower switch tube M 2 Fully conducting, down tube driving voltage V 2 Is a lower switch tube M 2 Gate-source capacitance C of (2) gsL Charging while driving current through capacitor C 1_L Resistance R 1_L And resistance R 2_L An RC voltage dividing circuit is composed of a capacitor C 1_L Charging; charging current flows through resistor R 3_L Due to unsatisfied triode Q 1L Is not operated;
working mode 2 stage, lower switch tube M 2 Start to turn off, upper switch tube M 1 Still completely turn off, capacitor C 1_L Is a lower switch tube M 2 Providing turn-off negative pressure, lower switch tube M 2 The channel and its body diode are commutated;
working mode 3 stage, upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 4 stage, upper switch tube M 1 Start to conduct and drive voltage V of upper tube 1 For upper switch tube M 1 Gate-source capacitance C of (2) gsH Charging while driving current through capacitor C 1_H Resistance R 1_H And resistance R 2_H An RC voltage dividing circuit is composed of a capacitor C 1_H Charging; lower switch tube M 2 The crosstalk suppressing circuit of (1) starts to operate, first, the capacitor C 1_L The working mode 1 is in a full charge state and is a lower switch tube M 2 Providing turn-off negative pressure to accelerate the lower switch tube M 2 Is a shutdown procedure of (1); next, upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly descend and drop down the switch tube M 2 Drain-source voltage V of (2) dsL Rapidly rise and lower switch tube M 2 Gate-drain capacitance C of (C) gdL Start charging, charging current C gdL dV dsL /dt flow-through resistor R 3_L Generates a right positive left negative voltage drop to make the triode Q 1_L Conduction and capacitance C 2_L The access circuit absorbs charging current; triode Q 1_L After conduction, the charging current is absorbed, so that the resistor R 3_L Transistor Q when the voltage at both ends is less than 0.7V 1_L Does not satisfy the conduction condition, so that triode Q 1_L Turn off, capacitance C 2_L Disconnecting from the drive circuit;
working mode 5 stage, upper switch tube M 1 Fully conducting, lower switch tube M 2 Fully turned off, the load current flows through the upper switch tube M 1 A channel of (2);
working mode 6 stage, upper switch tube M 1 Start to turn off, at this time, switch tube M is turned on 1 Channel of (2) and lower switch tube M 2 Is commutated by the body diode of (2), upper switch tube M 1 Drain-source voltage V of (2) dsH Rapidly rise and lower switch tube M 2 Drain-source voltage V of (2) dsL Rapidly descend and drop down the switch tube M 2 Gate-drain capacitance C of (C) gdL Start discharging, discharge current passes through capacitor C 2_L And diode D 1_L A branch circuit formed by the two circuits reduces the lower switch tube M 2 The equivalent impedance of the gate-source drive loop of (2) suppresses the lower switch tube M 2 Gate-source negative crosstalk voltage of (a);
in the working mode 7 stage, after the current conversion is finished, the load current passes through the lower switch tube M 2 Follow current of body diode of (1), upper switch tube M 1 And lower switch tube M 2 All are in an off state, and the bridge arm is in a dead zone state;
working mode 8 stage, lower switch tube M 2 Starting to conduct and feeding the switch tube M 1 Maintain the off state, lower switch tube M 2 Channel of (2) and lower switch tube M 2 Is used for converting the current of the body diode; after the current conversion is finished, the working mode is converted into a working mode 1.
5. The SiC MOSFET driving method of claim 4, wherein transistor Q 1_H And triode Q 1_L All are PNP type triode.
6. The SiC MOSFET driving method of claim 4, wherein diode D 1_H And diode D 1_L Are zener diodes.
CN202310599152.7A 2023-05-25 2023-05-25 SiC MOSFET driving circuit and driving method Pending CN116827095A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117318451A (en) * 2023-11-28 2023-12-29 华羿微电子股份有限公司 Half-bridge driving circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117318451A (en) * 2023-11-28 2023-12-29 华羿微电子股份有限公司 Half-bridge driving circuit
CN117318451B (en) * 2023-11-28 2024-05-07 华羿微电子股份有限公司 Half-bridge driving circuit

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