CN116647219A - IGBT driving circuit, method for driving IGBT and chip - Google Patents

IGBT driving circuit, method for driving IGBT and chip Download PDF

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Publication number
CN116647219A
CN116647219A CN202310475218.1A CN202310475218A CN116647219A CN 116647219 A CN116647219 A CN 116647219A CN 202310475218 A CN202310475218 A CN 202310475218A CN 116647219 A CN116647219 A CN 116647219A
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China
Prior art keywords
voltage
igbt
rising stage
stage
time signal
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CN202310475218.1A
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Chinese (zh)
Inventor
陈燕宁
邵亚利
刘芳
付振
张泉
徐鹏
沈美根
解尧明
李东镁
张东
邓永峰
鹿祥宾
符荣杰
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BRITE SEMICONDUCTOR Inc
Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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BRITE SEMICONDUCTOR Inc
Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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Priority to CN202310475218.1A priority Critical patent/CN116647219A/en
Publication of CN116647219A publication Critical patent/CN116647219A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The invention relates to the field of chips, and discloses an IGBT driving circuit, a method for driving an IGBT and a chip, wherein the IGBT driving circuit comprises the following components: the phase determining module is used for determining whether the IGBT is in a current rising phase of a conducting phase or a voltage rising phase of a switching-off phase; and a driving voltage control module for: controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in a current rising stage, wherein the start-on driving voltage is a driving voltage applied to the gate at the start of the on stage; and controlling the driving voltage applied to the gate electrode to be greater than the start-off driving voltage in a case where the IGBT is in a voltage rising stage, wherein the start-off driving voltage is a driving voltage applied to the gate electrode at the start of the off stage. Therefore, the method has the advantages of inhibiting current spikes and voltage spikes, reducing switching loss and inhibiting EMI.

Description

IGBT driving circuit, method for driving IGBT and chip
Technical Field
The invention relates to the field of chips, in particular to an IGBT driving circuit, a method for driving an IGBT and a chip.
Background
With the continuous development of power electronic components, devices such as IGBTs, which have the advantages of high current density, reduced saturation voltage, high switching speed, and the like, have been widely used. In the practical use process, the power devices of the high-speed switches are found to generate serious electromagnetic interference (EMI) to the surrounding environment, and cause interference to the normal operation of other peripheral electronic components.
Electromagnetic interference (Electromagnetic Interference, EMI for short), the transliteration is electromagnetic interference. EMI refers to interference phenomenon generated by electromagnetic waves acting on electronic components, and includes both conducted interference and radiated interference. Electromagnetic radiation and electromagnetic conduction are distinguished by the way electromagnetic fields propagate. Conductive EMI is caused by physical contact of conductors, while radiated EMI, in contrast, is caused by induction. In high frequency switching power supplies, the dominant form of EMI is radiated EMI. Radiation transmission is the propagation of interference energy in the form of electromagnetic waves through a medium, the interference energy being emitted to the surrounding space according to the laws of electromagnetic fields. There are three common types of radiative coupling: electromagnetic waves emitted by the antenna A are accidentally accepted by the antenna B, and the electromagnetic waves are called antenna-to-antenna coupling; the spatial electromagnetic field is coupled by wire induction, called field-to-wire coupling; high frequency signal induction between two parallel wires is called wire-to-wire inductive coupling. In practical engineering, interference between two devices typically involves coupling in a number of ways. And the EMI generated in the high-speed and high-current IGBT switching process can radiate to surrounding areas in a large quantity, and is coupled with surrounding wires to generate clutter and noise. Therefore, the method has key effects of inhibiting the EMI noise in the IGBT switching process, improving the reliability of a circuit, reducing the environmental noise and the like.
The turn-on of the IGBT is divided into four phases. First, the gate-emitter voltage V GE Rising but not reaching the turn-on threshold voltage V GE(th) The voltage applied to the gate starts to give the gate capacitance C GE Charging to V GE Rising. Second, gate-emitter voltage V GE Greater than the turn-on threshold voltage V GE(th) Collector current I C Rapidly increasing, excessive di/dt will form an overshoot current, I, due to the parasitic stray inductance C Will generate current peak, V CE Slightly drop. Again, collector current I C Peak value is reached and then the load current I is reduced L The IGBT is positioned in the active area at the moment; gate-emitter voltage V GE Maintained at Miller voltage V GE(m) The IGBT is in miller stage. At this time, the gate current I G With a steady current to the miller capacitance C GC Charging, collector-emitter voltage V CE The conduction voltage drops toward saturation. Finally, gate-emitter voltage V GE When the active region breaks through to the saturation region, the driving voltage value is increased. Collector-emitter voltage V CE Eventually drop to saturation conduction voltage drop V CE(sat) The IGBT is fully on so far.
There are four phases when the IGBT is turned off. First is the off delay phase. At this time, the voltage applied to the gate changes from positive to negative, and the gate capacitor starts to discharge. Gate-emitter voltage V GE Will suddenly drop to the miller plateau voltage V GE(m) Then remain stable, collector current I C Kept unchanged at this stage, collector-emitter voltage V CE And is unchanged. The next is the voltage rise phase. Gate-emitter voltage V GE Clamped at Miller plateau voltage, miller capacitance C GC Start to pass gate current I G Discharge, collector-emitter voltage V CE And starts to rise. Followed by a current drop phase. Gate-emitter voltage V GE The breakthrough Miller platform continues to descend until the threshold voltage is started, the IGBT is in an active region at the moment, and the collector current I C Also with V GE And falls. I due to parasitic stray inductance and load inductance C The rapid change can generate induced electromotive force in the same direction as the bus voltage on the equivalent inductance, and the turn-off voltage spike arrives. Finally, the current tailing stage is performed. Gate-emitter voltage V GE Continuously decreasing to the on threshold voltage V GE(th) Below, the IGBT enters an off state.
Since the IGBT forms very high du/dt in the fast on-off process, and these high frequency transient voltages form very high di/dt through the action of the driving motor and the distributed capacitance. These transients, in voltage and current, cause significant electromagnetic interference through various parasitic capacitances and lead inductances, which can affect the surrounding electrical devices. It is therefore necessary to design an IGBT driving circuit that suppresses EMI. And if the current peak Ip of the IGBT during the turn-on process can be suppressed and the voltage and current curves thereof are made flatter, the EMI characteristics thereof can be improved greatly.
The traditional IGBT driving mainly improves voltage and current peaks of the IGBT by adjusting the gate resistance, and makes di/dt and du/dt curves more gentle, so that the EMI characteristics are improved. Because the resistance of the IGBT on-gate resistor is smaller than that of the off-gate resistor, the traditional method adopts a driving scheme of double-gate resistors. Different gate resistors are selectively connected through different driving signals in the switching process, voltage and current spikes can be restrained to a certain extent, and the generation of EMI is restrained, so that the drive structure is the most widely applied drive structure in the low-power IGBT at present. However, it is still not preferable to perfectly suppress di/dt and du/dt, reduce switching loss, and reduce EMI. In the prior art, the conventional driving scheme of the double-gate resistor can inhibit the generation of the EMI only to a limited extent, and may be accompanied by the defects of overlong switching time, large switching loss and the like.
Disclosure of Invention
An object of an embodiment of the present invention is to provide an IGBT driving circuit, a method for driving an IGBT, and a chip, which can solve or at least partially solve the above-mentioned problems.
To achieve the above object, an aspect of an embodiment of the present invention provides an IGBT driving circuit including: the phase determining module is used for determining whether the IGBT is in a current rising phase of a conducting phase or a voltage rising phase of a switching-off phase; and a driving voltage control module for: controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in the current rising stage, wherein the start-on driving voltage is the driving voltage applied to the gate at the start of the on stage; and controlling the driving voltage applied to the gate electrode to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising stage, wherein the start-off driving voltage is the driving voltage applied to the gate electrode at the start of the off stage.
Optionally, the IGBT driving circuit further includes: the moment determining module is connected with the stage determining module and is used for: acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT; based on the acquired gate voltage, determining whether to emit one of a set of preset time signals, wherein the set of preset time signals includes: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and under the condition that one of the preset time signal sets is determined to be sent out, sending out a corresponding time signal; wherein the stage determining module determining whether the IGBT is in a current rising stage of an on stage or a voltage rising stage of an off stage includes: and determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received or not.
Optionally, the time determining module includes: the current rising stage starting time determining module is used for: acquiring the gate voltage; comparing the acquired gate voltage with a gate voltage at the beginning of a preset current rising stage, and determining whether the current rising stage beginning time is reached or not so as to determine whether a current rising stage beginning time signal is sent or not; and determining to send out the current rising stage start time signal and send out the current rising stage start time signal when the current rising stage start time is reached; the current rising stage end time determining module is used for: acquiring the gate voltage; comparing the acquired gate voltage with a gate voltage ending at a preset current rising stage, and determining whether the current rising stage ending time is reached or not so as to determine whether to send out a current rising stage ending time signal or not; and under the condition that the current rising stage end time is reached, determining to send out the current rising stage end time signal and sending out the current rising stage end time signal; the voltage rising stage starting time determining module is used for: acquiring the gate voltage; comparing the acquired gate voltage with a gate voltage at the beginning of a preset voltage rising stage, and determining whether the voltage rising stage beginning moment is reached or not so as to determine whether to send out a signal of the voltage rising stage beginning moment; and under the condition that the starting time of the voltage rising stage is reached, determining to send out the starting time signal of the voltage rising stage and sending out the starting time signal of the voltage rising stage; the voltage rising stage end time determining module is used for: acquiring the gate voltage; comparing the acquired gate voltage with a gate voltage ending at a preset voltage rising stage, determining whether the voltage rising stage ending time is reached or not, and determining whether to send out a signal of the voltage rising stage ending time or not; and determining to send out the voltage rising stage ending time signal and sending out the voltage rising stage ending time signal when the voltage rising stage ending time is reached.
Optionally, at least one of the current rise phase start time determining module, the current rise phase end time determining module, the voltage rise phase start time determining module, and the voltage rise phase end time determining module is a comparator.
Optionally, the stage determining module determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received and the received time signal includes: determining that the IGBT is not in the current rising stage and the voltage rising stage if the time signal is not received; determining that the IGBT is in the current rising phase if only the current rising phase start time signal is received; determining that the IGBT is not in the current rising stage and the voltage rising stage in the case where only the current rising stage start time signal and the current rising stage end time signal are received; determining that the IGBT is in the voltage rising stage when the voltage rising stage start time signal is received but the voltage rising stage end time signal is not received; and determining that the IGBT is not in the current rising stage and the voltage rising stage, upon receiving the voltage rising stage start time signal and the voltage rising stage end time signal.
Optionally, the IGBT driving circuit further includes: a turn-on driving voltage supply module for supplying the driving voltage applied to the gate electrode in the turn-on stage; and a turn-off driving voltage supply module for supplying the driving voltage applied to the gate electrode in the turn-off phase; wherein the driving voltage control module controls the driving voltage applied to the gate of the IGBT to be smaller than the start-on driving voltage when the IGBT is in the current rising phase, to be: controlling the driving voltage provided by the conduction driving voltage providing module to be smaller than the starting conduction driving voltage; wherein the driving voltage control module controls the driving voltage applied to the gate to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising phase to: and controlling the driving voltage provided by the turn-off driving voltage providing module to be larger than the start turn-off driving voltage.
Optionally, the on-drive voltage providing module and/or the off-drive voltage providing module is a voltage module or a digitally controlled voltage source comprising a switching resistor string and a power supply.
Accordingly, another aspect of an embodiment of the present invention provides a method for driving an IGBT, the method comprising: determining whether the IGBT is in a current rising stage of a conducting stage or a voltage rising stage of a turning-off stage; controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in the current rising stage, wherein the start-on driving voltage is the driving voltage applied to the gate at the start of the on stage; and controlling the driving voltage applied to the gate electrode to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising stage, wherein the start-off driving voltage is the driving voltage applied to the gate electrode at the start of the off stage.
Optionally, the method further comprises: acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT; based on the acquired gate voltage, determining whether to emit one of a set of preset time signals, wherein the set of preset time signals includes: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and under the condition that one of the preset time signal sets is determined to be sent out, sending out a corresponding time signal; wherein the step of determining whether the IGBT is in a current rising phase of an on phase or a voltage rising phase of an off phase includes: and determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received or not.
Optionally, the determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received and the received time signal includes: determining that the IGBT is not in the current rising stage and the voltage rising stage if the time signal is not received; determining that the IGBT is in the current rising phase if only the current rising phase start time signal is received; determining that the IGBT is not in the current rising stage and the voltage rising stage in the case where only the current rising stage start time signal and the current rising stage end time signal are received; determining that the IGBT is in the voltage rising stage when the voltage rising stage start time signal is received but the voltage rising stage end time signal is not received; and determining that the IGBT is not in the current rising stage and the voltage rising stage, upon receiving the voltage rising stage start time signal and the voltage rising stage end time signal.
In addition, another aspect of the embodiment of the present invention further provides a chip, where the chip includes: the IGBT driving circuit.
According to the technical scheme, the driving voltage applied to the gate electrode of the IGBT is controlled to be smaller than the starting on driving voltage when the IGBT is in the current rising stage, and the driving voltage applied to the gate electrode is controlled to be larger than the starting off driving voltage when the IGBT is in the voltage rising stage, so that the absolute value of the driving voltage applied to the gate electrode is reduced, the current of the gate electrode is reduced, the change rate of the voltage of the gate electrode is reduced, the switching speed of the IGBT is reduced, the current curve and the voltage curve are slowed down, the current peak and the voltage peak are reduced, and the EMI is restrained; in addition, reduction of current spike and voltage spike and suppression of EMI are achieved by reducing the driving voltage applied to the gate without changing the gate resistance, whereby reduction of switching loss can be achieved; in addition, through the technical scheme, the current spike and the voltage spike can be reduced, the EMI can be restrained, and the switching loss can be reduced, so that the method has the advantages of restraining the current spike and the voltage spike, reducing the switching loss and restraining the EMI.
Drawings
Fig. 1 is a block diagram of an IGBT driving circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an IGBT driving circuit according to another embodiment of the invention;
FIG. 3 is a segmented voltage driving waveform diagram for a turn-on phase according to another embodiment of the present invention; and
fig. 4 is a segmented voltage driving waveform diagram of an off phase according to another embodiment of the present invention.
Description of the reference numerals
Stage 1 determination Module 2 drive Voltage control Module
3 first comparator 4 second comparator
5 third comparator 6 fourth comparator
7 first voltage module 8 second voltage module
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
One aspect of an embodiment of the invention provides an IGBT driving circuit.
Fig. 1 is a block diagram of an IGBT driving circuit according to an embodiment of the present invention. As shown in fig. 1, the IGBT driving circuit includes a stage determination module 1 and a driving voltage control module 2. The phase determining module 1 is used for determining whether the IGBT is in a current rising phase of an on phase or a voltage rising phase of an off phase. Specifically, it may be that a gate-to-emitter voltage between a gate and an emitter of the IGBT is used to determine whether the IGBT is in a current rising stage or a voltage rising stage. For example, a first value range of the gate-emission voltage corresponding to the current rising stage of the IGBT and a second value range of the gate-emission voltage corresponding to the voltage rising stage of the IGBT are preset, the gate-emission voltage of the IGBT is obtained in real time, and the obtained gate-emission voltage is compared with the first value range and the second value range to determine whether the IGBT is in the current rising stage or the voltage rising stage. The driving voltage control module 2 is used for controlling the driving voltage applied to the gate electrode of the IGBT to be smaller than the starting on driving voltage when the IGBT is in the current rising stage, wherein the starting on driving voltage is the driving voltage applied to the gate electrode at the beginning of the on stage; and controlling the driving voltage applied to the gate electrode to be greater than the start-off driving voltage in a case where the IGBT is in a voltage rising stage, wherein the start-off driving voltage is a driving voltage applied to the gate electrode at the start of the off stage. In the embodiment of the present invention, there are many forms of providing the driving voltage applied to the gate electrode, so long as the driving voltage can be provided in the on-state or off-state, for example, the driving voltage applied to the gate electrode can be provided by a voltage module including a switch resistor string and a power supply or a digital control voltage source.
According to the technical scheme, the driving voltage applied to the gate electrode of the IGBT is controlled to be smaller than the starting on driving voltage when the IGBT is in the current rising stage, and the driving voltage applied to the gate electrode is controlled to be larger than the starting off driving voltage when the IGBT is in the voltage rising stage, so that the absolute value of the driving voltage applied to the gate electrode is reduced, the current of the gate electrode is reduced, the change rate of the voltage of the gate electrode is reduced, the switching speed of the IGBT is reduced, the current curve and the voltage curve are slowed down, the current peak and the voltage peak are reduced, and the EMI is restrained; in addition, reduction of current spike and voltage spike and suppression of EMI are achieved by reducing the driving voltage applied to the gate without changing the gate resistance, whereby reduction of switching loss can be achieved; in addition, through the technical scheme, the current spike and the voltage spike can be reduced, the EMI can be restrained, and the switching loss can be reduced, so that the method has the advantages of restraining the current spike and the voltage spike, reducing the switching loss and restraining the EMI. In addition, the technical scheme provided by the embodiment of the invention can be suitable for low-power IGBT and high-power IGBT.
Optionally, in an embodiment of the present invention, the IGBT driving circuit may further include a timing determination module. The moment determining module is connected with the stage determining module and is used for: acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT; based on the acquired gate voltage, determining whether to send out one of preset time signal sets, wherein the preset time signal sets comprise: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and in the event that it is determined to issue one of the set of preset time signals, issuing a corresponding time signal. The starting time signal of the current rising stage corresponds to the entering of the IGBT into the current rising stage; the current rising phase ending time signal corresponds to an IGBT ending current rising phase; the voltage rising phase starting time signal corresponds to the IGBT entering the voltage rising phase; the voltage-rising-phase end-time signal corresponds to an IGBT end voltage-rising phase. Specifically, in the case where it is determined based on the acquired gate voltage which one of the set of preset time signals is to be emitted, and the corresponding time signal emitted is the determined one. For example, if it is determined that the current rising stage start time signal needs to be issued, the current rising stage start time signal is issued. Alternatively, in the embodiment of the present invention, the value or range of the gate emission voltage corresponding to each of the preset time signal sets may be preset, and whether to issue one of the preset time signal sets may be determined by comparing the acquired gate emission voltage with the value or range of the gate emission voltage corresponding to each of the preset time signal sets. In addition, in the embodiment of the present invention, there are many forms of comparing the acquired gate voltage with the value or range of the gate voltage corresponding to each of the preset time signal sets. For example, the acquired gate voltage may be uniformly compared with the value or range of the gate voltage corresponding to each of the preset time signal sets by one component; four components are set for the four time signals in the preset time signal set, and for each component, the acquired gate voltage is compared with the value or range of the gate voltage corresponding to the time signal corresponding to the component to determine whether to send out the time signal corresponding to the component. Further, the stage determination module determining whether the IGBT is in a current rising stage of the on stage or a voltage rising stage of the off stage includes: and determining whether the IGBT is in a current rising stage or a voltage rising stage according to whether the time signal is received or not. Specifically, whether to be in the current rising stage or the voltage rising stage is determined according to whether the time signal is received or not and what the time signal is received in the case of receiving the time signal. In addition, in the embodiment of the present invention, the gate voltage may be acquired according to the following. And obtaining a gate voltage and an emitter voltage, and subtracting the emitter voltage from the gate voltage to obtain a gate voltage.
Optionally, in an embodiment of the present invention, the time determining module may include: the device comprises a current rising stage starting time determining module, a current rising stage ending time determining module, a voltage rising stage starting time determining module and a voltage rising stage ending time determining module. The current rising stage starting time determining module is used for: acquiring a gate voltage; comparing the acquired gate voltage with a preset current rising stage starting gate voltage, determining whether the current rising stage starting time is reached or not, and determining whether a current rising stage starting time signal is sent or not; and determining to issue a current rising stage start time signal and issuing a current rising stage start time signal when the current rising stage start time is reached. When the gate voltage is equal to the gate voltage at which the current rising stage starts, the current rising stage starting time signal needs to be sent out. The current rising stage end time determining module is used for: acquiring a gate voltage; comparing the acquired gate voltage with a gate voltage ending at a preset current rising stage, and determining whether the current rising stage ending time is reached or not so as to determine whether a current rising stage ending time signal is sent or not; and when the current rising stage end time is reached, determining to send out a current rising stage end time signal and sending out a current rising stage end time signal. When the gate voltage is equal to the gate voltage at the end of the preset current rising stage, the signal indicating the end time of the current rising stage is needed to be sent out. The voltage rising stage starting time determining module is used for: acquiring a gate voltage; comparing the acquired gate voltage with a gate voltage at the beginning of a preset voltage rising stage, determining whether the voltage rising stage begins to be reached or not, and determining whether a voltage rising stage begins to be sent or not; and determining to send out a voltage rising stage start time signal and sending out a voltage rising stage start time signal when the voltage rising stage start time is reached. When the gate voltage is equal to the gate voltage at the start of the preset voltage rising stage, the signal indicating the start time of the voltage rising stage is needed to be sent out. The voltage rising stage end time determining module is used for: acquiring a gate voltage; comparing the acquired gate voltage with a gate voltage ending at a preset voltage rising stage to determine whether the voltage rising stage ending time is reached or not so as to determine whether a voltage rising stage ending time signal is sent or not; and when the voltage rising stage end time is reached, determining to send out a voltage rising stage end time signal and sending out a voltage rising stage end time signal. When the gate voltage is equal to the gate voltage at the end of the preset voltage rising stage, the signal indicating the end time of the voltage rising stage is needed to be sent out. Alternatively, in the embodiment of the present invention, the preset current rising period start gate-emission voltage and the preset voltage rising period end gate-emission voltage may be the on threshold voltage; the preset current rising period ending gate voltage and the preset voltage rising period starting gate voltage may be miller voltages.
Optionally, in an embodiment of the present invention, at least one of the current rising stage start time determining module, the current rising stage end time determining module, the voltage rising stage start time determining module, and the voltage rising stage end time determining module is a comparator. The current rise phase start time determination module, the current rise phase end time determination module, the voltage rise phase start time determination module, and the voltage rise phase end time determination module may be comparators, but the meaning of the emitted time signal expression is different. For example, the current rising stage starting moment determining module is a comparator, and the moment signal sent by the comparator corresponds to the current rising stage starting moment signal; the current rise phase end time determining module is a comparator, the time signal sent by the comparator corresponds to the current rise phase end time signal, and so on.
Optionally, in an embodiment of the present invention, the determining whether the IGBT is in the current rising stage or the voltage rising stage by the stage determining module according to whether the time signal is received and the received time signal may include the following. When the time signal is not received, it is determined that the IGBT is not in the current rising stage and the voltage rising stage, that is, when none of the four signals of the current rising stage start time signal, the current rising stage end time signal, the voltage rising stage start time signal, and the voltage rising stage end time signal is received, it is determined that the IGBT is not in the current rising stage and the voltage rising stage. When only the current rising period start time signal is received, it is determined that the IGBT is in the current rising period. When only the current-rise-stage start time signal and the current-rise-stage end time signal are received, it is determined that the IGBT is not in the current-rise stage and the voltage-rise stage. Determining that the IGBT is in a voltage rising stage when a voltage rising stage start time signal is received but a voltage rising stage end time signal is not received; and determining that the IGBT is not in the current rising stage and the voltage rising stage when the voltage rising stage start time signal and the voltage rising stage end time signal are received.
Optionally, in an embodiment of the present invention, the IGBT driving circuit may further include an on driving voltage providing module and an off driving voltage providing module. The on driving voltage supply module is used for supplying driving voltage applied to the gate electrode in an on stage; and a turn-off driving voltage supply module for supplying a driving voltage applied to the gate electrode in a turn-off phase; wherein, the driving voltage control module controls the driving voltage applied to the gate electrode of the IGBT to be smaller than the starting on driving voltage under the condition that the IGBT is in the current rising stage, and the driving voltage is as follows: the driving voltage provided by the control conduction driving voltage providing module is smaller than the starting conduction driving voltage; the driving voltage control module controls the driving voltage applied to the gate electrode to be larger than the starting turn-off driving voltage under the condition that the IGBT is in a voltage rising stage to be as follows: the driving voltage provided by the control turn-off driving voltage providing module is larger than the start turn-off driving voltage.
Alternatively, in an embodiment of the present invention, the on-driving voltage providing module and/or the off-driving voltage providing module may be a voltage module including a switching resistor string and a power supply or a digitally controlled voltage source. Wherein the switch resistor string comprises a series of resistors connected in series between the power supply and ground, and a tap between the resistors can provide a series of voltages; in use a switch is used to connect the desired voltage to the output. When the voltage module is used for providing the driving voltage applied to the gate electrode, the driving voltage applied to the gate electrode is adjusted by adjusting the on and off of a switch included in the switch resistor string. Specifically, as shown in fig. 2, the first voltage module 7 includes a power supply VCC and a switching resistor string, and the second voltage module 8 includes a power supply VEE and a switching resistor string; the switch resistor string is a series of resistors which are connected in series between VCC or VEE and the ground, wherein a switch is arranged between every two resistors, and each resistor is connected with two switches in parallel and then connected with one switch; the first voltage module 7 and the second voltage module 8 control the driving voltage applied to the gate electrode by controlling on or off of the switch included in the switching resistor string, respectively.
Fig. 2 is a schematic diagram of an IGBT driving circuit according to another embodiment of the invention. An IGBT driving circuit according to an embodiment of the present invention is described below with reference to fig. 2. The embodiment of the invention provides a digitally controlled low-EMI IGBT gate driving circuit, which realizes the functions of inhibiting current spikes and voltage spikes and slowing down di/dt curves (current curves) and du/dt curves (voltage curves) by adjusting pull-in current and driving voltage in a segmented manner when an IGBT is turned on and turned off, thereby improving the EMI characteristics of the IGBT. In addition, the technical scheme provided by the embodiment of the invention improves the EMI characteristics from the aspects of driving voltage and current, does not need a large number of adjustable gate resistors at the periphery, greatly simplifies the complexity of peripheral circuits, does not need to generate additional PWM signals to control each gate resistor, and simultaneously avoids the bottleneck of restricting the variable gate resistor driving scheme, namely the need of accurately and flexibly selecting the gate resistor.
As shown in fig. 2, in this embodiment, the IGBT driving circuit includes a first comparator 3, a second comparator 4, a third comparator 5, a fourth comparator 6, a first voltage module 7, a second voltage module 8, and a digital logic control module. Wherein, the current rising stage starting moment determining module is a first comparator 3; the first comparator 3 is used for applying a gate voltage V GE And the turn-on threshold voltage V GE(th) A comparison is made to determine whether the current rise phase start time is reached based on whether the two are equal, and a current rise phase start time signal is issued if the current rise phase start time is reached. The current rising stage end time determining module is a second comparisonA device 4; the second comparator 4 is used for comparing the gate voltage V GE And Miller voltage V GE(m) And comparing, determining whether the current rising stage end time is reached or not according to the equality of the current rising stage end time and sending out a current rising stage end time signal when the current rising stage end time is reached. The voltage rising stage starting time determining module is a third comparator 5; the third comparator 5 is used for comparing the gate voltage V GE And Miller voltage V GE(m) A comparison is made to determine whether the voltage rising stage start timing is reached based on whether the two are equal, and a voltage rising stage start timing signal is issued if the voltage rising stage start timing is reached. The voltage rising stage end time determining module is a fourth comparator 6; the fourth comparator 6 is used for comparing the gate voltage V GE And the turn-on threshold voltage V GE(th) And comparing, determining whether the voltage rising stage end time is reached or not according to the fact that the voltage rising stage end time and the voltage rising stage end time are equal, and sending out a voltage rising stage end time signal when the voltage rising stage end time is reached. The on-drive voltage supply module is a first voltage module 7; the first voltage module 7 is used for providing a driving voltage applied to the gate electrode in the conducting stage. The off-drive voltage supply module is a second voltage module 8; the second voltage module 8 is used for providing a driving voltage applied to the gate electrode in the off phase. The digital logic control module corresponds to the stage determination module and the driving voltage control module described in the above embodiments; the digital logic control module receives time signals from the first comparator 3, the second comparator 4, the third comparator 5 and the fourth comparator 6 and determines the current stage of the IGBT according to the received time signals; determining to enter a current rising phase when a time signal is received from the first comparator 3, determining to end a current rising phase when a time signal is received from the second comparator 4, determining to enter a voltage rising phase when a time signal is received from the third comparator 5, and determining to end a current rising phase when a time signal is received from the fourth comparator 6; the digital logic control module adjusts the driving voltage applied to the gate electrode for the current rising period and the voltage rising period.
The embodiment of the invention provides an IGBT segmentation voltage driving control which is realized by digital control and has adjustable segmentation process, wherein the control mode is used for slowing down di/dt curves and du/dt curves of an IGBT by applying different driving voltages to the gate electrode of the IGBT at different parts of the IGBT conduction stage and applying different driving voltages to the gate electrode of the IGBT at different parts of the IGBT turn-off stage, as shown in fig. 3 and 4, so that the aim of inhibiting EMI is achieved.
Specifically, in order to achieve the purpose of slowing down the di/dt curve and the du/dt curve, different values need to be given to the driving voltages of the gates corresponding to the different portions of the on phase, and different values need to be given to the driving voltages of the gates corresponding to the different portions of the off phase. Specifically, to do the above, it is necessary to apply a driving voltage different from other parts of the on phase (i.e., time period t1 to t2 in fig. 3) to the current rising phase (i.e., time period t0 to t4 in fig. 3) of the on phase, and to apply a driving voltage different from other parts of the off phase (i.e., time period t5 to t9 in fig. 4) to the voltage rising phase (i.e., time period t7 to t8 in fig. 4) of the off phase, so that the di/dt curve and the du/dt curve are more gentle. Specifically, as shown in FIG. 3, the driving voltage scheme for the segment in the on-state is that the driving voltage applied to the gate electrode is V in the current rising stage of the on-state H ，V H Less than V CC ，V CC The driving voltage applied to the gate for the other part of the on-phase, V CC The drive voltage is also turned on. The start time t1 and the end time t2 of the current rising stage are determined by the gate voltage, and the start time t1 and the end time t2 of the current rising stage are controlled by the first comparator 3 and the second comparator 4, respectively, specifically, when the gate voltage V GE Equal to the on threshold voltage V GE(th) At this time, the current is ready to start to rise rapidly, and reaches the starting time t1 of the current rising stage; when the gate voltage V GE Equal to Miller V GE(m) When the voltage reaches the miller stage, the current spike ends, and the end time t2 of the current rising stage is reached. The segmented driving voltage scheme in the off phase is shown in FIG. 4, and the driving voltage applied to the gate electrode in the voltage rising phase of the off phase is V L ，V L Greater than V EE ，V EE The driving voltage applied to the gate for the other part of the on-phase, V EE The drive voltage is also turned off for the start. The start time t7 and the end time t8 of the voltage rising stage are determined by the gate-on voltage, and the start time t7 and the end time t8 of the voltage rising stage are controlled by the third comparator 5 and the fourth comparator 6, respectively, specifically, when the gate-on voltage V GE Equal to Miller V GE(m) At this time, the voltage starts to rapidly suddenly change, and reaches the starting time t7 of the voltage rising stage; when the gate voltage V GE Equal to the on threshold voltage V GE(th) When the voltage reaches the threshold voltage, the voltage spike ends, and the end time t8 of the voltage rising phase is reached. The digital logic control module adjusts the first voltage module 7 and the second voltage module 8 to perform piecewise controllable adjustment on the driving voltage applied to the gate. In addition, the voltage V H And V L The current rising period starting time t1 and ending time t2 and voltage rising period starting time t7 and ending time t8 can be adjusted according to specific situations (as long as the limiting conditions are met), and the switching curves of various IGBTs can be adapted.
In summary, the embodiment of the invention provides a digitally controlled segmented voltage IGBT gate driving circuit, which realizes the functions of segmented voltage adjustment and segmented time adjustment, simplifies the peripheral driving circuit, and improves the EMI noise problem when the IGBT is turned on and off. In addition, compared with the traditional double-gate resistor driving scheme, the technical scheme provided by the embodiment of the invention can better reduce the switching loss while inhibiting voltage spikes and current spikes and inhibiting EMI.
In addition, at present, a variable gate resistance driving scheme is adopted to inhibit the EMI, and the variable gate resistance driving strategy is to switch on different switches according to the switching characteristics of the IGBT by a control signal output by the front end, select resistors with different resistance values according to actual needs in each process of switching on and switching off, flexibly control the switching time, switching loss and collector voltage and current peak, and prevent overlarge voltage and current change rates. The driving method is suitable for the complex working environment of the high-power IGBT at present, can effectively improve the working performance of the IGBT, protects the IGBT and inhibits the generation of EMI; however, not only is the peripheral structure relatively complex, but also additional PWM signals are required to control the respective gate resistances to achieve the desired function; and how to accurately and flexibly select the gate resistance is a major bottleneck restricting this technology. Compared with a variable gate resistance driving scheme, the technical scheme provided by the embodiment of the invention greatly simplifies peripheral circuits and control, realizes adjustable sectional driving voltage and adjustable sectional time, avoids the difficult problem of selecting the resistance value of the variable gate resistance, and can be more flexibly adapted to the switching state of the IGBT.
Accordingly, another aspect of an embodiment of the present invention provides a method for driving an IGBT, the method comprising: determining whether the IGBT is in a current rising stage of a conducting stage or a voltage rising stage of a turning-off stage; controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in a current rising stage, wherein the start-on driving voltage is a driving voltage applied to the gate at the start of the on stage; and controlling a driving voltage applied to the gate electrode to be greater than a start-off driving voltage in a case where the IGBT is in a voltage rising stage, wherein the start-off driving voltage is the driving voltage applied to the gate electrode at the start of the off stage.
Optionally, in an embodiment of the present invention, the method further includes: acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT; based on the acquired gate voltage, determining whether to send out one of preset time signal sets, wherein the preset time signal sets comprise: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and sending out a corresponding time signal if it is determined that one of the set of preset time signals is sent out; wherein the step of determining whether the IGBT is in a current rising phase of an on phase or a voltage rising phase of an off phase includes: and determining whether the IGBT is in a current rising stage or a voltage rising stage according to whether the time signal is received or not and whether the received time signal is in the current rising stage or the voltage rising stage.
Optionally, in an embodiment of the present invention, determining whether the IGBT is in a current rising stage or a voltage rising stage according to whether the time signal is received and the received time signal includes: under the condition that the time signal is not received, determining that the IGBT is not in a current rising stage and a voltage rising stage; under the condition that only a current rising stage starting time signal is received, determining that the IGBT is in a current rising stage; under the condition that only a current rising stage starting time signal and a current rising stage ending time signal are received, determining that the IGBT is not in a current rising stage and a voltage rising stage; determining that the IGBT is in a voltage rising stage when a voltage rising stage start time signal is received but a voltage rising stage end time signal is not received; and determining that the IGBT is not in the current rising stage and the voltage rising stage when the voltage rising stage start time signal and the voltage rising stage end time signal are received.
The specific working principle and benefits of the method for driving the IGBT provided by the embodiment of the invention are similar to those of the IGBT driving circuit provided by the embodiment of the invention, and will not be described here again.
In addition, another aspect of the embodiment of the present invention further provides a chip, where the chip includes: the IGBT driving circuit described in the above embodiment.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited thereto. The technical solution of the invention can be subjected to a plurality of simple variants within the scope of the technical idea of the invention. Including the various specific features being combined in any suitable manner. The various possible combinations of the invention are not described in detail in order to avoid unnecessary repetition. Such simple variations and combinations are likewise to be regarded as being within the scope of the present disclosure.

Claims (11)

1. An IGBT drive circuit, characterized in that the IGBT drive circuit includes:
the phase determining module is used for determining whether the IGBT is in a current rising phase of a conducting phase or a voltage rising phase of a switching-off phase; and
a driving voltage control module for:
controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in the current rising stage, wherein the start-on driving voltage is the driving voltage applied to the gate at the start of the on stage; and
The driving voltage applied to the gate electrode is controlled to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising stage, wherein the start-off driving voltage is the driving voltage applied to the gate electrode at the start of the off stage.
2. The IGBT driving circuit according to claim 1, characterized in that the IGBT driving circuit further comprises:
the moment determining module is connected with the stage determining module and is used for:
acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT;
based on the acquired gate voltage, determining whether to emit one of a set of preset time signals, wherein the set of preset time signals includes: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and
under the condition that one of the preset time signal sets is determined to be sent out, a corresponding time signal is sent out;
wherein the stage determining module determining whether the IGBT is in a current rising stage of an on stage or a voltage rising stage of an off stage includes: and determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received or not.
3. The IGBT driving circuit according to claim 2, wherein the timing determination module includes:
the current rising stage starting time determining module is used for:
acquiring the gate voltage;
comparing the acquired gate voltage with a gate voltage at the beginning of a preset current rising stage, and determining whether the current rising stage beginning time is reached or not so as to determine whether a current rising stage beginning time signal is sent or not; and
determining to send out the current rising stage starting time signal and sending out the current rising stage starting time signal under the condition that the current rising stage starting time is reached;
the current rising stage end time determining module is used for:
acquiring the gate voltage;
comparing the acquired gate voltage with a gate voltage ending at a preset current rising stage, and determining whether the current rising stage ending time is reached or not so as to determine whether to send out a current rising stage ending time signal or not; and
determining to send out a current rising stage ending time signal and sending out the current rising stage ending time signal under the condition that the current rising stage ending time is reached;
The voltage rising stage starting time determining module is used for:
acquiring the gate voltage;
comparing the acquired gate voltage with a gate voltage at the beginning of a preset voltage rising stage, and determining whether the voltage rising stage beginning moment is reached or not so as to determine whether to send out a signal of the voltage rising stage beginning moment; and
determining to send out the voltage rising stage starting time signal and sending out the voltage rising stage starting time signal under the condition that the voltage rising stage starting time is reached;
the voltage rising stage end time determining module is used for:
acquiring the gate voltage;
comparing the acquired gate voltage with a gate voltage ending at a preset voltage rising stage, determining whether the voltage rising stage ending time is reached or not, and determining whether to send out a signal of the voltage rising stage ending time or not; and
and when the voltage rising stage ending time is reached, determining to send out the voltage rising stage ending time signal and sending out the voltage rising stage ending time signal.
4. The IGBT driving circuit according to claim 3, wherein at least one of the current rise phase start timing determination module, the current rise phase end timing determination module, the voltage rise phase start timing determination module, and the voltage rise phase end timing determination module is a comparator.
5. The IGBT driving circuit according to claims 2 to 4, wherein the stage determining module determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received and the received time signal includes:
determining that the IGBT is not in the current rising stage and the voltage rising stage if the time signal is not received;
determining that the IGBT is in the current rising phase if only the current rising phase start time signal is received;
determining that the IGBT is not in the current rising stage and the voltage rising stage in the case where only the current rising stage start time signal and the current rising stage end time signal are received;
determining that the IGBT is in the voltage rising stage when the voltage rising stage start time signal is received but the voltage rising stage end time signal is not received; and
and when the voltage rising stage starting time signal and the voltage rising stage ending time signal are received, determining that the IGBT is not in the current rising stage and the voltage rising stage.
6. The IGBT driving circuit according to claim 1, characterized in that the IGBT driving circuit further comprises:
a turn-on driving voltage supply module for supplying the driving voltage applied to the gate electrode in the turn-on stage; and
a turn-off driving voltage supply module for supplying the driving voltage applied to the gate electrode in the turn-off phase;
wherein the driving voltage control module controls the driving voltage applied to the gate of the IGBT to be smaller than the start-on driving voltage when the IGBT is in the current rising phase, to be: controlling the driving voltage provided by the conduction driving voltage providing module to be smaller than the starting conduction driving voltage;
wherein the driving voltage control module controls the driving voltage applied to the gate to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising phase to: and controlling the driving voltage provided by the turn-off driving voltage providing module to be larger than the start turn-off driving voltage.
7. The IGBT drive circuit according to claim 6, wherein the on drive voltage supply module and/or the off drive voltage supply module is a voltage module or a digitally controlled voltage source comprising a switching resistor string and a power supply.
8. A method for driving an IGBT, the method comprising:
determining whether the IGBT is in a current rising stage of a conducting stage or a voltage rising stage of a turning-off stage;
controlling a driving voltage applied to a gate of the IGBT to be smaller than a start-on driving voltage in a case where the IGBT is in the current rising stage, wherein the start-on driving voltage is the driving voltage applied to the gate at the start of the on stage; and
the driving voltage applied to the gate electrode is controlled to be greater than a start-off driving voltage in a case where the IGBT is in the voltage rising stage, wherein the start-off driving voltage is the driving voltage applied to the gate electrode at the start of the off stage.
9. The method of claim 8, wherein the method further comprises:
acquiring a gate-emitter voltage between a gate electrode and an emitter electrode of the IGBT;
based on the acquired gate voltage, determining whether to emit one of a set of preset time signals, wherein the set of preset time signals includes: a current rise phase start time signal, a current rise phase end time signal, a voltage rise phase start time signal, and a voltage rise phase end time signal; and
Under the condition that one of the preset time signal sets is determined to be sent out, a corresponding time signal is sent out;
wherein the step of determining whether the IGBT is in a current rising phase of an on phase or a voltage rising phase of an off phase includes: and determining whether the IGBT is in the current rising stage or the voltage rising stage according to whether the time signal is received or not.
10. The method of claim 9, wherein the determining whether the IGBT is in the current rise phase or the voltage rise phase based on whether the time of day signal is received and the received time of day signal comprises:
determining that the IGBT is not in the current rising stage and the voltage rising stage if the time signal is not received;
determining that the IGBT is in the current rising phase if only the current rising phase start time signal is received;
determining that the IGBT is not in the current rising stage and the voltage rising stage in the case where only the current rising stage start time signal and the current rising stage end time signal are received;
Determining that the IGBT is in the voltage rising stage when the voltage rising stage start time signal is received but the voltage rising stage end time signal is not received; and
and when the voltage rising stage starting time signal and the voltage rising stage ending time signal are received, determining that the IGBT is not in the current rising stage and the voltage rising stage.
11. A chip, the chip comprising:
the IGBT driving circuit according to any one of claims 1 to 7.
CN202310475218.1A 2023-04-27 2023-04-27 IGBT driving circuit, method for driving IGBT and chip Pending CN116647219A (en)

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