CN117094270A - Multi-element regulation and control parameter comprehensive design method based on Si and SiC mixed device - Google Patents
Multi-element regulation and control parameter comprehensive design method based on Si and SiC mixed device Download PDFInfo
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Abstract
The comprehensive design method of the multielement regulation parameters based on the Si and SiC mixed device comprises the following steps of S1, determining a switching mode applied to the mixed device; step S2, under the switching mode determined in the step S1, the influence of the regulation and control parameters on the loss and the current overshoot of the hybrid device is analyzed in advance, and then the sensitivity of the influence of each regulation and control parameter on the loss and the current overshoot of the hybrid device is obtained according to the specific model of the Si IGBT and the SiC MOSFET in the hybrid device; s3, comparing the sensitivity of the regulation and control parameters to the loss optimization of the hybrid device, and determining the priority of the regulation and control parameters for reducing the loss; s4, optimizing the loss of the hybrid device by adopting the regulation and control parameters with high priority, and determining the value of the regulation and control parameters with high priority; and S5, restraining the current overshoot value of the hybrid device by adopting the regulation and control parameter with low priority, limiting the peak current within the preset maximum pulse current value of the hybrid device, and determining the regulation and control parameter value with low priority.
Description
Technical Field
The application relates to the technical field of switching tube parameter regulation, in particular to a multi-element regulation parameter comprehensive design method based on a Si and SiC mixed device.
Background
Most of the current power electronic conversion devices are constructed based on traditional silicon (Si) semiconductor materials, but the problems of high loss, low switching frequency, low power factor and the like of the converter are caused by the inherent performance limitation of the Si materials. The third-generation semiconductor material silicon carbide (SiC) has very excellent performance, has advantages in multiple aspects such as breakdown field strength, forbidden bandwidth, carrier saturation drift speed, thermal conductivity and the like, and can effectively improve the efficiency and power density of the power electronic converter. However, the current SiC device technology is not mature and the packaging technology is lagging, resulting in insufficient current carrying capacity and high cost. Based on the above, related researchers propose to combine a high-power Si device and a low-power SiC device in parallel to form a Si IGBT/SiC MOSFET hybrid device so as to realize the compromise between the performance and the cost of the two power devices, and the Si IGBT/SiC MOSFET hybrid device provides a new thought for improving the performance of the devices.
To advance the wide application of hybrid devices, related scholars have conducted many studies on the optimization of the loss and reliable operation of Si IGBT/SiC MOSFET hybrid devices. In the aspect of loss optimization, the prior study compares various switching modes of the Si IGBT/SiC MOSFET hybrid device, as shown in fig. 2, and indicates that the switching mode I (SiC MOSFET switching-on-off mode) can effectively reduce the switching loss of the hybrid device. In terms of reliability, the prior study proposes a regulation strategy of adopting different switching modes of a hybrid device according to the magnitude of load current, as shown in fig. 3, wherein a mode I indicates that only a SiC MOSFET in the hybrid device is switched, and the Si IGBT is in an off state; mode II indicates that the SiC MOSFET in the hybrid device is firstly switched on and then switched off; and in the mode III, si IGBT is utilized to be turned on and off firstly so as to ensure the reliability of the hybrid device.
The above research on the Si IGBT/SiC MOSFET hybrid device is often only aimed at efficiency or reliability, and two performance indexes are rarely considered at the same time, so that the efficiency and the reliability of the hybrid device are not effectively considered at the same time. The loss optimization and the reliability guarantee of the hybrid device are mutually associated and coupled, and the optimization considering only a single index can influence and possibly even degrade other performance indexes. Meanwhile, the current mixing device has a single regulation mode, and the regulation potential of the mixing device is still to be further explored.
Disclosure of Invention
The application aims to solve the technical problem of providing a multi-element regulation and control parameter comprehensive design method based on a Si and SiC mixed device, which can determine the priority of regulation and control parameters in terms of reducing the loss of the mixed device, optimize the loss of the mixed device by adopting the regulation and control parameters with high priority, determine the regulation and control parameter value with high priority, inhibit the current overshoot value of the mixed device by adopting the regulation and control parameters with low priority, limit the current overshoot value to the preset maximum pulse current value of the mixed device, and determine the regulation and control parameter value with low priority, thereby effectively considering the efficiency and the reliability of the mixed device.
In order to solve the technical problems, the application adopts the following technical methods: a multi-element regulation and control parameter comprehensive design method based on a Si and SiC mixed device comprises the following steps:
step S1, determining a switching mode applied by a hybrid device;
step S2, under the switching mode determined in the step S1, the influence of each regulation parameter on the loss and the current overshoot of the hybrid device is analyzed in advance, and then the sensitivity of the influence of each regulation parameter on the loss and the current overshoot of the hybrid device is obtained according to the specific model of the Si IGBT and the SiC MOSFET in the hybrid device; the regulation parameters comprise driving voltage and driving resistance of the SiC MOSFET of the hybrid device, and driving voltage and driving resistance of the Si IGBT;
step S3, comparing the driving voltage and the driving resistance of the SiC MOSFET of the hybrid device obtained in the step S2 with the driving voltage and the driving resistance of the Si IGBT, and determining the priority of reducing the loss by the regulation and control parameters;
s4, optimizing the loss of the hybrid device by adopting the regulation and control parameters with high priority, and determining the value of the regulation and control parameters with high priority;
and S5, restraining the current overshoot value of the hybrid device by adopting the regulation and control parameter with low priority, limiting the peak current within the preset maximum pulse current value of the hybrid device, and determining the regulation and control parameter value with low priority.
Further, in the step S1, the switching mode applied by the hybrid device is a SiC MOSFET on-off mode.
Further, the hybrid loss includes a switching loss and a conduction loss, the switching loss including an on loss and an off loss, the conduction loss being a product of a conduction power and a load current, wherein:
1) In the SiC MOSFET switching-on-off mode, the switching-on loss and the switching-off loss of the hybrid device are respectively as follows:
(1)
(2)
in the method, in the process of the application,、/>the on-loss and the off-loss of the hybrid device are respectively;the driving voltage of the SiC MOSFET; />A drive resistor which is a SiC MOSFET; />、/>Hard on loss and hard off loss of a single SiC MOSFET, respectively; />Is the load current; />Is the total on-resistance of the hybrid device; />The rise time of the Si IGBT; />The turn-off time of the Si IGBT; />The on-resistance of the SiC MOSFET; />、/>The turn-on delay time and the turn-off delay time are respectively; />The opening time of the SiC MSOFET;the turn-on delay time of the Si IGBT;
2) In the SiC MOSFET first-on-last-off mode, the on-power of the hybrid device is as follows:
(3)
in the method, in the process of the application,the on power of the hybrid device; />The driving voltage of the Si IGBT; />The on-resistance of the Si IGBT; />And the load current corresponding to the Si IGBT conduction threshold voltage.
Still further, in the step S2, in the SiC MOSFET on-off mode, the peak current when the hybrid device has a current overshoot risk is:(4)
in the method, in the process of the application,is peak current; />For overshoot current value, ">To recover charge for reverse; />To restore softness for reverse;、/>、/>、/>the transconductance, the turn-on threshold voltage, the gate-source parasitic capacitance and the source parasitic inductance of the SiC MOSFET are respectively.
Still further, in the step S2, in the SiC MOSFET first-on-last-off mode, it can be determined according to formulas (1) - (2) that the switching loss of the hybrid device is inversely related to the driving voltage of the SiC MOSFET and positively related to the driving resistance of the SiC MOSFET; according to the formula (3), the negative correlation between the conduction power of the hybrid device and the driving voltage of the SiC MOSFET and the Si IGBT can be determined; according to the formula (4), it can be determined that the current overshoot of the hybrid device is positively correlated with the driving voltage of the SiC MOSFET and negatively correlated with the driving resistance of the SiC MOSFET.
Further, in the step S3, the sensitivity of the driving voltage and the driving resistance of the SiC MOSFET obtained in the step S2 to the switching loss optimization of the hybrid device is compared, and in terms of reducing the switching loss of the hybrid device, the driving voltage of the SiC MOSFET is determined to be a high-priority regulation parameter, and the driving resistance of the SiC MOSFET is determined to be a low-priority regulation parameter.
Further, in the step S4, a maximum value of the driving voltage of the SiC MOSFET is selected to optimize the switching loss of the hybrid device.
Still further, the step S4 further includes selecting a maximum value of the Si IGBT driving voltage to optimize the turn-on loss of the hybrid device.
Preferably, the step S2 further includes fitting a relation between the driving voltage, the driving resistance and the switching loss of the hybrid device of the SiC MOSFET according to the sensitivity of each regulation parameter to the switching loss of the hybrid device and the current overshoot; and fitting a relation between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET.
Preferably, the step S5 includes:
s501, determining the maximum pulse current value of the hybrid device;
s502, limiting the peak current to be within the maximum pulse current value determined in the step S501;
and S503, substituting the maximum value of the driving voltage of the SiC MOSFET determined in the step S4 and the peak current determined in the step S502 into a relational expression between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET fitted in the step S2 to obtain the driving resistance value of the SiC MOSFET.
The multi-element regulation parameter comprehensive design method based on the Si and SiC mixed device can determine the priority of the regulation parameters in terms of reducing the loss of the mixed device, optimize the loss of the mixed device by adopting the regulation parameters with high priority, determine the regulation parameter value with high priority, inhibit the current overshoot value of the mixed device by adopting the regulation parameters with low priority, limit the current overshoot value in the preset maximum pulse current value of the mixed device, and determine the regulation parameter value with low priority, thereby effectively considering the efficiency and the reliability of the mixed device. The application is simple and effective, has wide application range, and can provide reference for the optimization control of the regulation parameters of other types of hybrid devices.
Drawings
FIG. 1 is a flow chart of a method for comprehensively designing multiple regulation parameters based on a Si and SiC hybrid device according to the application;
FIG. 2 is a schematic diagram of four typical switching patterns of a conventional Si IGBT/SiC MOSFET hybrid device (in the figure, (a) is a hybrid switching pattern I, (b) is a hybrid switching pattern II, (c) is a hybrid switching pattern III, and (d) is a hybrid switching pattern IV);
FIG. 3 is a schematic diagram of a conventional control strategy employing different switching modes of hybrid devices according to the magnitude of the load current;
fig. 4 is a schematic structural diagram of a Si and SiC based hybrid device according to the present application;
FIG. 5 is a schematic circuit diagram of a dual pulse test experiment platform in accordance with an embodiment of the present application;
FIG. 6 is a schematic circuit diagram of a steady-state parameter measurement experiment platform in an embodiment of the present application;
fig. 7 is a schematic diagram of an influence of a driving voltage on a switching loss of a hybrid device and a current overshoot in an embodiment of the present application (in the figure, (a) is a schematic diagram of an influence of the driving voltage on a switching loss of the hybrid device, (b) is a schematic diagram of an influence of the driving voltage on a turn-on power of the hybrid device, and (c) is a schematic diagram of an influence of the driving voltage on the current overshoot of the hybrid device);
fig. 8 is a schematic diagram of the influence of the driving resistor on the switching loss of the hybrid device (a) and (b) on the on-power of the hybrid device, and (c) on the overshoot of the current of the hybrid device, according to the embodiment of the present application;
FIG. 9 is a schematic diagram of the effect of the driving voltage and driving resistance of the SiC MOSFET on the switching loss of the hybrid device in an embodiment of the application;
FIG. 10 is a schematic diagram of the effect of the drive voltage and drive resistance of a SiC MOSFET on the current overshoot of a hybrid device in an embodiment of the application;
fig. 11 is a schematic diagram of a range of values of a driving resistor of a SiC MOSFET in an embodiment of the present application.
Detailed Description
The application will be further described with reference to examples and drawings, to which reference is made, but which are not intended to limit the scope of the application.
In the prior art, the research on the hybrid device based on the Si IGBT/SiC MOSFET at present cannot effectively consider both high efficiency and high reliability, the existing regulation means are single, the efficiency of the hybrid device is further improved, and the high efficiency and the high reliability of the hybrid device are better considered. Based on the conclusion, the application firstly adjusts the control parameter with high priority to optimize the loss of the hybrid device, and suppresses the current overshoot value of the hybrid device by adjusting the control parameter with low priority, and limits the current overshoot value to the preset maximum pulse current value of the hybrid device, thereby ensuring the reliability of the Si IGBT/SiC MOSFET hybrid device. Specifically, the present application is described below.
As shown in FIG. 1, the method for comprehensively designing the multi-element regulation parameters based on the Si and SiC mixed device mainly comprises five steps.
Step S1, determining a switching mode applied by the hybrid device.
The basic structure of the Si IGBT/SiC MOSFET hybrid device is shown in figure 4, and the Si IGBT/SiC MOSFET hybrid device is formed by connecting a high-power Si IGBT and a low-power SiC MOSFET in parallel. In order to effectively combine the low switching loss and the low conduction loss characteristics of the Si IGBT/SiC MOSFET hybrid device, the switching mode applied to the hybrid device in the present application is determined in step S1 to be the switching mode I (SiC MOSFET on-off mode) in fig. 2, and the SiC MOSFET is turned on-off before on-off to reduce the hybrid device loss, thereby improving the operation efficiency of the hybrid device.
Step S2
S201, qualitatively analyzing the influence of driving voltages and driving resistances of the SiC MOSFET and the Si IGBT on the loss and the current overshoot of the hybrid device under the switching mode determined in the step S1.
1. The hybrid device loss includes a switching loss and a conduction loss, the switching loss including a turn-on loss and a turn-off loss, the conduction loss being a product of a conduction power and a load current, wherein:
1) In the SiC MOSFET switching-on-off mode, the switching-on loss and the switching-off loss of the hybrid device are respectively as follows:
(1)
(2)
in the method, in the process of the application,、/>the on-loss and the off-loss of the hybrid device are respectively;the driving voltage of the SiC MOSFET; />A drive resistor which is a SiC MOSFET; />、/>Hard turn-on for single SiC MOSFETsLoss and hard turn-off loss; />Is the load current; />Is the total on-resistance of the hybrid device; />The rise time of the Si IGBT; />The turn-off time of the Si IGBT; />The on-resistance of the SiC MOSFET; />、/>The turn-on delay time and the turn-off delay time are respectively; />The opening time of the SiC MSOFET;the turn-on delay time of the Si IGBT.
2) In the SiC MOSFET first-on-last-off mode, the on-power of the hybrid device is as follows:
(3)
in the method, in the process of the application,the on power of the hybrid device; />The driving voltage of the Si IGBT; />The on-resistance of the Si IGBT; />And the load current corresponding to the Si IGBT conduction threshold voltage.
According to the formulas (1) - (2), the switching loss of the hybrid device can be determined to be inversely related to the driving voltage of the SiC MOSFET and positively related to the driving resistance of the SiC MOSFET; it can be determined from equation (3) that the on-power of the hybrid device is inversely related to the drive voltages of the SiC MOSFET and the Si IGBT.
2. In the aspect of current overshoot of the hybrid device, the reverse recovery current of the diode can form a current peak in the turn-on process of the hybrid device, and the high current change rate in the turn-off process of the hybrid device can be matched with the parasitic loop inductanceL loop The action produces a higher spike voltage. Therefore, the SiC MOSFET of the low power device has an overcurrent risk during the switching process of the hybrid device. Based on this, in the SiC MOSFET on-off mode, the peak current of the hybrid device is:
(4)
in the method, in the process of the application,is peak current; />For overshoot current value, ">To recover charge for reverse; />To restore softness for reverse;、/>、/>、/>the transconductance, the turn-on threshold voltage, the gate-source parasitic capacitance and the source parasitic inductance of the SiC MOSFET are respectively.
According to the formula (4), it can be determined that the current overshoot of the hybrid device is positively correlated with the driving voltage of the SiC MOSFET and negatively correlated with the driving resistance of the SiC MOSFET.
S202, in step S201, the influence relation among the driving voltage and the driving resistance of the SiC MOSFET and the driving voltage and the driving resistance of the Si IGBT, the loss of the hybrid device and the current overshoot is obtained, and based on the influence relation, according to the specific model numbers of the Si IGBT and the SiC MOSFET, the sensitivity of the driving voltage and the driving resistance of the SiC MOSFET and the influence of the driving voltage and the driving resistance of the Si IGBT on the switching loss and the current overshoot of the hybrid device is obtained through test experiments.
S203, fitting a relation between the driving voltage of the SiC MOSFET, the driving resistor and the switching loss of the hybrid device according to the driving voltage of the SiC MOSFET, the driving resistor, the driving voltage of the Si IGBT and the sensitivity of the driving resistor to the switching loss and the current overshoot of the hybrid device; and fitting a relation between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET.
And S3, comparing the driving voltage of the SiC MOSFET and the sensitivity of the driving resistor to the switching loss optimization of the hybrid device, and determining that the driving voltage of the SiC MOSFET is a high-priority regulation parameter and the driving resistor of the SiC MOSFET is a low-priority regulation parameter in the aspect of reducing the switching loss of the hybrid device.
And S4, optimizing the switching loss of the hybrid device by adopting the regulation and control parameter with high priority, and determining the value of the regulation and control parameter with high priority. Specifically, the maximum value of the SiC MOSFET drive voltage is selected to optimize the switching loss of the hybrid device. In addition, the maximum value of the Si IGBT driving voltage can be selected to optimize the conduction loss of the hybrid device.
And S5, restraining the current overshoot value of the hybrid device by adopting the regulation and control parameter with low priority, limiting the peak current within the preset maximum pulse current value of the hybrid device, and determining the regulation and control parameter value with low priority. Specific:
s501, determining a maximum pulse current value of the hybrid device.
S502, limiting the peak current to the maximum pulse current value determined in step S501.
And S503, substituting the maximum value of the driving voltage of the SiC MOSFET determined in the step S4 and the peak current determined in the step S502 into a relational expression between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET fitted in the step S2 to obtain the driving resistance value of the SiC MOSFET.
Next, in this embodiment, a hybrid device is formed by combining 1200V/25A Si IGBT (IGW 25N120H 3) from Infineon company and 1200V/12.5A SiC MOSFET (C2M 0160120D) from tree company, and a double pulse test experiment platform and a steady state parameter measurement experiment platform are set up to verify the method provided by the application.
The double-pulse test experiment platform constructed in the embodiment is used for measuring the switching loss and the current overshoot of the hybrid device, as shown in fig. 5, wherein the bus voltage of the double-pulse test platform is 400V, the test current is the rated current 25A of the hybrid device, and the turn-on delay time is longerAnd turn-off delay time->All 1us.
In addition, the steady-state parameter measurement experiment platform constructed in the embodiment is used for measuring the on-power of the hybrid device, as shown in fig. 6. The on-power of the hybrid device is measured under the rated current 25A of the hybrid device, wherein the steady-state parameter measurement experiment platform realizes accurate constant on-current through the series connection of the direct-current power supply and the electronic load; and through a switchS 1 And switchS 2 The current conversion of the circuit is realized, and meanwhile, the junction temperature of the hybrid device is kept constant by utilizing the incubator, so that the interference of the junction temperature of the device on experimental results is avoided.
1. Influence of the drive voltage on the switching losses and the current overshoot of the hybrid device
When the driving voltage of the Si IGBT and the SiC MOSFET is changed, the driving resistance of the Si IGBT and the SiC MOSFET is kept to be 20 omega, the relation between the loss of the hybrid device and the influence of the current overshoot by the driving voltage of the device is shown in figure 7, and as can be seen from figure 7, the switching loss of the hybrid deviceThe on power of the hybrid device is obviously reduced along with the rise of the driving voltage of the SiC MOSFETAre all inversely related to the driving voltage of the SiC MOSFET and the Si IGBT, and the current overshoot value of the hybrid device is +.>And becomes significantly larger as the drive voltage of the SiC MOSFET increases. The sensitivity of the drive voltage to the loss and current overshoot of the hybrid device is shown in table 1:
TABLE 1 sensitivity of drive voltage to hybrid loss and current overshoot
2. Influence of the drive resistor on the loss and the current overshoot of the hybrid device
When the drive resistance of the SiC MOSFET and the Si IGBT is changed, the drive voltages of the SiC MOSFET and the Si IGBT are kept at 15V, the relation between the loss of the hybrid device and the current overshoot is affected by the drive resistance of the device as shown in FIG. 8, and as can be seen from FIG. 8, the switching loss of the hybrid deviceThe drive resistance of the SiC MOSFET is obviously increased along with the increase of the drive resistance of the SiC MOSFET, and the conduction power of the hybrid device is +.>The current overshoot value of the hybrid device is not influenced by the driving resistance of the SiC MOSFET and the Si IGBT>And significantly decreases as the drive resistance of the SiC MOSFET increases. The sensitivity of the drive resistor to the loss and current overshoot of the hybrid device is shown in table 2:
TABLE 2 sensitivity of drive resistors to hybrid loss and current overshoot
In summary, the analysis proves that the variation of the driving voltage and the driving resistance of the Si IGBT has no influence on the switching loss and the current overshoot of the hybrid device, and the driving voltage and the driving resistance of the Si IGBT can be set to fixed values later. Thus, the effects of the drive voltage and drive resistance of the SiC MOSFET on the hybrid loss and current overshoot are summarized in table 3. As the driving voltage of the SiC MOSFET increases, the sensitivity of the SiC MOSFET driving resistor to the switching loss of the hybrid device is smaller; as the drive resistance of the SiC MOSFET increases, the sensitivity of the drive voltage of the SiC MOSFET to the effect of the switching loss of the hybrid device increases. And the sensitivity of the driving voltage of the SiC MOSFET on the influence of the switching loss is larger than that of the driving resistor, namely, the priority of adjusting the driving voltage of the SiC MOSFET is larger than that of the driving resistor in the aspect of reducing the switching loss of the hybrid device, so that the driving voltage of the SiC MOSFET can be preferentially adjusted to further improve the efficiency of the hybrid device.
TABLE 3 sensitivity of drive voltage, drive resistance to hybrid loss and current overshoot
The relation diagram of the switching loss of the hybrid device, the driving voltage and the driving resistance of the SiC MOSFET is shown in fig. 9, and a fitting formula is shown in formula (5):
(5)
the relation diagram of the peak current of the hybrid device, the driving voltage and the driving resistance of the SiC MOSFET is shown in fig. 10, and a fitting formula is shown in formula (6):
(6)
in view of the fact that the driving voltage and the driving resistance of the Si IGBT have small influence on the switching loss and the current overshoot of the hybrid device, the conduction loss of the hybrid device is inversely related to the driving voltage of the Si IGBT. To minimize the loss of the hybrid device, the drive voltage of the Si IGBT can be selected in this embodimentThe driving resistance of the Si IGBT is 20V, and the driving resistance of the Si IGBT has no effect on the loss of the hybrid device, and may be fixed to 20Ω. Firstly, a fitting formula of switching loss of a hybrid device and driving voltage and driving resistance of a SiC MOSFET is as follows:
(7)
since the SiC MOSFET is turned on and then off, the peak current mainly affects the SiC MOSFET, and an appropriate SiC MOSFET driving resistor may be selected to suppress the peak current, when the peak current of the hybrid device is limited to 30A in this embodiment, the following formula may be obtained:
(8)
optimal SiC MOSFET driving resistorAlong with->Rise to increase, and the driving voltage of the SiC MOSFET +.>The sensitivity of the switching loss influence on the hybrid device is larger, so that the driving resistance optimum value of the SiC MOSFET can be preferentially adjusted to 20V in order to further improve the operation efficiency of the hybrid deviceThe switching loss is:
(9)
while the switching loss increases as the drive resistance of the SiC MOSFET increases, so whenWhen the switching loss of the hybrid device is:
(10)
the mixed device has minimum conducting power when the SiC MOSFET and the Si IGBT are both 20V, and has the conducting power when the load current is 25AIs approximated by formula (11). At a load current of 25A, a hybrid switching frequency of 20kHz, and a duty cycle of 0.5, the hybrid loss can be expressed as equation (12):
(11)
(12)
when the peak current is limited to 30A and the load current is 25A, the driving voltage of the MOSFET and the IGBT is 20V, and the SiC MOSFET drives the resistorIs->The hybrid loss at this time was 1949.22uJ for the hybrid during one switching cycle.
And (3) experimental verification: based on the above-described hybrid experimental platform, experimental data as shown in table 4 were obtained. Referring to fig. 11, sinceWhen the peak current of the hybrid device is larger than the maximum pulse current value (namely the maximum safe current value), the reliability of the hybrid device cannot be ensured. But->At this time, switching loss of the hybrid device increases and efficiency decreases. Thus (S)>And in the process, the loss of the hybrid device is minimized and the operation efficiency is optimal on the premise of ensuring the reliability of the hybrid device.
TABLE 4 sensitivity of drive voltage to hybrid loss
The foregoing embodiments are preferred embodiments of the present application, and in addition, the present application may be implemented in other ways, and any obvious substitution is within the scope of the present application without departing from the concept of the present application.
In order to facilitate understanding of the improvements of the present application over the prior art, some of the figures and descriptions of the present application have been simplified and some other elements have been omitted for clarity, as will be appreciated by those of ordinary skill in the art.
Claims (10)
1. The method for comprehensively designing the multielement regulation parameters based on the Si and SiC mixed device is characterized by comprising the following steps of:
step S1, determining a switching mode applied by a hybrid device;
step S2, under the switching mode determined in the step S1, the influence of each regulation parameter on the loss and the current overshoot of the hybrid device is analyzed in advance, and then the sensitivity of the influence of each regulation parameter on the loss and the current overshoot of the hybrid device is obtained according to the specific model of the Si IGBT and the SiC MOSFET in the hybrid device; the regulation parameters comprise driving voltage and driving resistance of the SiC MOSFET of the hybrid device, and driving voltage and driving resistance of the Si IGBT;
step S3, comparing the driving voltage and the driving resistance of the SiC MOSFET obtained in the step S2 with the driving voltage and the driving resistance of the Si IGBT to optimize the loss of the hybrid device, and determining the priority of reducing the loss of the regulation and control parameters;
s4, optimizing the loss of the hybrid device by adopting the regulation and control parameters with high priority, and determining the value of the regulation and control parameters with high priority;
and S5, restraining the current overshoot value of the hybrid device by adopting the regulation and control parameter with low priority, limiting the peak current within the preset maximum pulse current value of the hybrid device, and determining the regulation and control parameter value with low priority.
2. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 1, which is characterized in that: in the step S1, the switching mode applied by the hybrid device is a SiC MOSFET on-off mode.
3. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 2, which is characterized in that: the hybrid loss includes a switching loss and a conduction loss, the switching loss including an on loss and an off loss, the conduction loss being a product of a conduction power and a load current, wherein:
1) In the SiC MOSFET switching-on-off mode, the switching-on loss and the switching-off loss of the hybrid device are respectively as follows:
(1)
(2)
in the method, in the process of the application,、/>the on-loss and the off-loss of the hybrid device are respectively; />The driving voltage of the SiC MOSFET; />A drive resistor which is a SiC MOSFET; />、/>Hard on loss and hard off loss of a single SiC MOSFET, respectively; />Is the load current; />Is the total on-resistance of the hybrid device;the rise time of the Si IGBT; />The turn-off time of the Si IGBT; />The on-resistance of the SiC MOSFET;、/>the turn-on delay time and the turn-off delay time are respectively; />The opening time of the SiC MSOFET;the turn-on delay time of the Si IGBT;
2) In the SiC MOSFET first-on-last-off mode, the on-power of the hybrid device is as follows:
(3)
in the method, in the process of the application,the on power of the hybrid device; />The driving voltage of the Si IGBT; />The on-resistance of the Si IGBT; />And the load current corresponding to the Si IGBT conduction threshold voltage.
4. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 3, wherein the method comprises the following steps: in the step S2, in the SiC MOSFET first-on-last-off mode, the peak current when the hybrid device has a current overshoot risk is:
(4)
in the method, in the process of the application,is peak current; />For overshoot current value, ">To recover charge for reverse; />To restore softness for reverse; />、、/>、/>The transconductance, the turn-on threshold voltage, the gate-source parasitic capacitance and the source parasitic inductance of the SiC MOSFET are respectively.
5. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 4, which is characterized in that: in the step S2, in the SiC MOSFET first-on-last-off mode, it can be determined according to formulas (1) - (2) that the switching loss of the hybrid device is inversely related to the driving voltage of the SiC MOSFET and positively related to the driving resistance of the SiC MOSFET; according to the formula (3), the negative correlation between the conduction power of the hybrid device and the driving voltage of the SiC MOSFET and the Si IGBT can be determined; according to the formula (4), it can be determined that the current overshoot of the hybrid device is positively correlated with the driving voltage of the SiC MOSFET and negatively correlated with the driving resistance of the SiC MOSFET.
6. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 5, which is characterized in that: in the step S3, the sensitivity of the driving voltage and the driving resistance of the SiC MOSFET obtained in the step S2 to the switching loss optimization of the hybrid device is compared, and in terms of reducing the switching loss of the hybrid device, it is determined that the driving voltage of the SiC MOSFET is a high-priority regulation parameter, and the driving resistance of the SiC MOSFET is a low-priority regulation parameter.
7. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 6, which is characterized in that: in the step S4, the maximum value of the driving voltage of the SiC MOSFET is selected to optimize the switching loss of the hybrid device.
8. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 7, which is characterized in that: the step S4 further includes selecting a maximum value of the Si IGBT driving voltage to optimize the turn-on loss of the hybrid device.
9. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC hybrid device according to claim 6 or 8, wherein the method comprises the following steps: step S2 also comprises fitting a relation among driving voltage, driving resistance and switching loss of the hybrid device of the SiC MOSFET according to the sensitivity of each regulation and control parameter to the switching loss and current overshoot effect of the hybrid device; and fitting a relation between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET.
10. The method for comprehensively designing the multiple regulation parameters based on the Si and SiC mixed device according to claim 9, which is characterized in that: the step S5 includes:
s501, determining the maximum pulse current value of the hybrid device;
s502, limiting the peak current to be within the maximum pulse current value determined in the step S501;
and S503, substituting the maximum value of the driving voltage of the SiC MOSFET determined in the step S4 and the peak current determined in the step S502 into a relational expression between the driving voltage, the driving resistance and the peak current of the hybrid device of the SiC MOSFET fitted in the step S2 to obtain the driving resistance value of the SiC MOSFET.
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