CN114499113A - Drive voltage and resistance adjustable SiC MOSFET drive control circuit - Google Patents

Drive voltage and resistance adjustable SiC MOSFET drive control circuit Download PDF

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CN114499113A
CN114499113A CN202011263085.4A CN202011263085A CN114499113A CN 114499113 A CN114499113 A CN 114499113A CN 202011263085 A CN202011263085 A CN 202011263085A CN 114499113 A CN114499113 A CN 114499113A
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sic mosfet
resistance
switch tube
mosfet device
voltage
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胡西红
秦东东
吴元元
袁红升
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Beijing Machinery Equipment Research Institute
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Beijing Machinery Equipment Research Institute
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention relates to a drive control circuit of a SiC MOSFET (metal oxide semiconductor field effect transistor) with adjustable drive voltage and resistance, belongs to the technical field of SiC MOSFET drive, and solves the problems that high gain, simple structure, high stability and high efficiency are difficult to guarantee simultaneously in the prior art. The converter comprises a control chip, a SiC MOSFET device, and a power supply VG1～VG2Switch tube S1～S6Resistance RG1～RG2(ii) a Wherein, the control chip is used for outputting the switch tube S1～S6Control signal to switch tube S1～S6A gate electrode of (1); switch tube S1、S2Respectively with a power supply VG1The positive electrode of (1) is connected; switch tube S3～S5Respectively connected with a power supply VG1Negative electrode of (1), power supply VG2The negative electrode of the anode is connected with the ground; switch tube S6Drain electrode of and power supply VG2The positive electrode of (1) is connected; and, a switching tube S1、S3Respectively through a resistor RG1Is connected to the gate of the SiC MOSFET device,switch tube S2、S4Respectively through a resistor RG2The grid electrode of the SiC MOSFET device is connected; switch tube S5、S6Is connected to the source of the SiC MOSFET device. The circuit can ensure the safe and reliable operation of the SiC MOSFET device.

Description

Drive voltage and resistance adjustable SiC MOSFET drive control circuit
Technical Field
The invention relates to the technical field of SiC MOSFET drive control, in particular to a SiC MOSFET drive control circuit with adjustable drive voltage and resistance.
Background
With the rapid development of power electronic technology, SiC MOSFET devices have come to be produced. The high-frequency-switching-speed-adjustable high-frequency-switching-speed inverter has the characteristics of high switching speed, low loss, high use frequency and the like, and is widely applied to the technical field of power electronic converters.
At present, the source and drain output voltage/current change rate of the existing SiC MOSFET device is high, parasitic parameters obviously influence the performance of the device when the switching speed is low, the crosstalk problem is serious, the turn-off overvoltage and oscillation are serious, and the switching frequency is limited.
In order to solve the above problems, there are two main approaches to improve the prior art: one is to increase the gate resistance and the other is to increase the gate voltage. However, the greater the gate resistance increased by the first approach, the slower the switching speed of the SiC MOSFET device, and the significantly increased losses, i.e., at the expense of the highest switching frequency at which the device can operate. Second way increased gate voltage VGThe higher the positive voltage, the faster the gate-source voltage reaches the threshold voltage, and the faster the turn-on speed of the SiC MOSFET device, VGThe lower the negative voltage, the faster the turn-off speed of the SiC MOSFET device, but with problems of oscillation and cross talk.
Disclosure of Invention
In view of the foregoing analysis, the present invention provides a SiC MOSFET driving control circuit with adjustable driving voltage and resistance, so as to solve the problem that it is difficult to simultaneously ensure high gain, simple structure, high stability and high efficiency in the prior art.
On one hand, the embodiment of the invention provides a SiC MOSFET drive control circuit with adjustable drive voltage and resistance, which comprises a control chip, a SiC MOSFET device and a power supply VG1～VG2Switch tube S1～S6Resistance RG1～RG2(ii) a Wherein the resistance value RG1＜RG2Mains voltage VG1＞VG2；
Control chip for outputting switch tube S1～S6Control signal to switch tube S1～S6A gate electrode of (1);
switch tube S1、S2Respectively with a power supply VG1The positive electrode of (1) is connected; switch tube S3～S5Respectively with a power supply VG1Negative electrode of (1), power supply VG2The negative electrode of the anode is connected with the ground; switch tube S6Drain electrode of and power supply VG2The positive electrode of (1) is connected; and the number of the first and second electrodes,
switch tube S1、S3Respectively through a resistor RG1Connected with the gate of the SiC MOSFET device, a switching tube S2、S4Respectively through a resistor RG2The grid electrode of the SiC MOSFET device is connected; switch tube S5、S6Is connected to the source of the SiC MOSFET device.
The beneficial effects of the above technical scheme are as follows: the switch capacitor technology is combined with the traditional coupling inductor, so that higher voltage gain can be realized, and the structure is simple. By means of a pair of switching tubes S1～S6On-off time sequence control is realized, the SiC MOSFET device can play the advantages of high switching speed and low loss in one switching period, meanwhile, the hazards of oscillation, crosstalk and the like are avoided, and the high-efficiency and reliable operation capability of the SiC MOSFET device is enhanced. And the stress of each switching tube is lower and far lower than the output voltage. In order to ensure high switching speed and low loss of the SiC MOSFET device and avoid the harm of oscillation, crosstalk and the like, the driving voltage (power supply V)G1～VG2) And a driving resistor (resistor R)G1～RG2) The isoparametric should be properly adjusted according to the requirements in the switching process.
Based on the further improvement of the circuit, the SiC MOSFET drive control circuit also comprises a resistor RgCapacitor Cgd、Cgs、CdsDiode D1(ii) a Wherein the content of the first and second substances,
resistance RG1、RG2Are respectively passed through resistors RgThe grid electrode of the SiC MOSFET device is connected;
the gate of the SiC MOSFET device is further connected via a capacitor CgdConnected to the drain thereof via a capacitor CgsConnected to the source thereof; capacitor C indirectly connected in parallel between source and drain of SiC MOSFET devicedsDiode D1。
The beneficial effects of the above further improved scheme are: capacitor Cgd、Cgs、CdsDiode D1Are used to protect the SiC MOSFET device. The improvement can improve the accuracy of subsequent parameter design and control signal time sequence.
Further, a switch tube S for controlling the output of the chip1～S6The control signals are rectangular wave control signals; and the number of the first and second electrodes,
in one switching period of the SiC MOSFET device, the switching tube S1～S4The waveforms of the control signals are complementary so that S1～S4Starting in sequence; switch tube S5The control signal is S1、S4Superposition of control signals, switching tubes S6The control signal is S2、S3And (4) control signal superposition.
The beneficial effects of the above further improved scheme are: by means of a pair of switching tubes S1～S6And 4, orderly switching on and off, so that 4 working modes of the SiC MOSFET device are orderly and stable.
Further, the control chip executes the following program:
according to the gate-source safe voltage (V) of SiC MOSFET device-，V+) Determining the power supply VG1、VG2Amplitude range recommended to user for selecting proper power source VG1、VG2(ii) a Wherein, the power supply VG1、VG2Amplitude V ofG1、VG2Satisfy the following relationships
V+-VPreset of≤VG1≤V+
|V-|-VPreset of≤VG2≤|V-|
In the formula, VPresetA preset value selected by a user is, | | is an operator for taking an absolute value;
according to the selected power source VG1、VG2Miller voltage V in combination with SiC MOSFET devicesmillerCapacitor CgdResistance RgDetermining the resistance RG1、RG2The resistance value of the resistor is set to be,recommended to the user for selecting the appropriate resistance RG1、RG2；
According to the selected power supply VG1、VG2Resistance RG1、RG2Determining the switching tube S by combining the working duty ratio D and the working frequency f of the SiC MOSFET device1～S4Controlling respective on-time and off-time of the signals; off-state time is 1/f-on-state time;
according to the obtained switch tube S1～S4Control signal according to switching tube S5The control signal is S1、S4Control signal superposition and switching tube S6The control signal is S2、S3Determining the switching tube S according to the superposition principle of control signals5、S6A control signal;
output the switch tube S1～S6A control signal.
The beneficial effects of the above further improved scheme are: after the SiC MOSFET device is selected, the control chip automatically gives out a proper power supply VG1、VG2Range, resistance RG1、RG2Resistance value, S1～S6And controlling the on-state time and the off-state time of each signal to realize the matching design of the four modes.
Further, the control chip determines the switch tube S through the following formula1～S4Respective on-time tau of control signals1～τ4
Figure BDA0002775273900000041
Figure BDA0002775273900000042
Figure BDA0002775273900000043
Figure BDA0002775273900000044
Wherein
Figure BDA0002775273900000045
Figure BDA0002775273900000046
Figure BDA0002775273900000047
In the formula, VthThreshold turn-on voltage, g, for SiC MOSFET devicesfsTransconductance of SiC MOSFET devices, LSIs the source parasitic inductance, R, of the SiC MOSFET deviceG1、RG2、RgAre each RG1、RG2、RgResistance value of Cgd、Cgs、CdsAre respectively Cgd、Cgs、CdsAnd the capacitance value D is the working duty ratio of the SiC MOSFET device, and f is the working frequency of the SiC MOSFET device.
The beneficial effects of the above further improved scheme are: realize the pair of switch tubes S1～S4The accurate design of the pulse width (on-state time) of the control signal ensures that the SiC MOSFET realizes four modes.
Further, the control chip determines the resistance R through the following formulaG1Resistance value R ofG1
Figure BDA0002775273900000051
Wherein
Figure BDA0002775273900000052
Figure BDA0002775273900000053
In the formula, LpaAs parasitic inductances in the lines, RpaFor parasitic resistance in the circuit, l, w and h are respectively the length, width and thickness of a lead on a PCB (printed Circuit Board) provided with a SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) drive control circuit, rho is the conductivity of the lead, and V isbusThe rated output voltage for the load.
The beneficial effects of the above further improved scheme are: realize the pair of driving resistors RG1The accurate design of (2) is favorable to improving switching speed and work efficiency of the drive circuit, and direct application can greatly reduce design time and design cost.
Further, the control chip determines the resistance R through the following formulaG2Resistance value R ofG2
Figure BDA0002775273900000054
In the formula, VmillerMiller voltage, C, for SiC MOSFET devicesgdIs a capacitor CgdCapacitance value of RgIs a resistance RgThe resistance value.
The beneficial effects of the above further improved scheme are: realize the pair of driving resistors RG2The accurate design of (2) is favorable to improving switching speed and work efficiency of the drive circuit, and direct application can greatly reduce design time and design cost.
Further, the SiC MOSFET drive control circuit also comprises a diode D2An inductor L; wherein the content of the first and second substances,
the drain electrode of the SiC MOSFET device is connected with a diode D in parallel2The inductor L is connected with the positive input end of the load, and the source electrode of the inductor L is directly connected with the negative input end of the load.
The beneficial effects of the above further improved scheme are: a power output loop is constructed for the SiC MOSFET device, so that the output voltage or current oscillation peak of the SiC MOSFET device is suppressed, and the safe output of the circuit power is ensured.
Further, the control chip executes the following program:
output current amplitude I according to user requirementsOAnd determining the inductance value of the L by combining the working duty ratio D and the working frequency f of the SiC MOSFET device, and recommending the inductance value to a user for selecting a proper inductance L.
The beneficial effects of the above further improved scheme are: the preset rule of the power inductor L is limited, and the design time and the design cost can be greatly reduced by direct application.
Further, the control chip determines the inductance value of the L by the following formula
Figure BDA0002775273900000061
Wherein D is the working duty ratio of the SiC MOSFET device, f is the working frequency of the SiC MOSFET device, and IOFor presetting the amplitude of the output current, VbusThe rated output voltage for the load.
The beneficial effects of the above further improved scheme are: the precise design of the inductor L is realized, the SiC MOSFET drive control circuit is ensured to have the set power output capability, and the direct application can greatly reduce the design time and the design cost.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
FIG. 1 is a schematic diagram of a drive control circuit of a SiC MOSFET with adjustable drive voltage and resistance according to embodiment 1 of the present invention;
FIG. 2 is a voltage-current waveform diagram in operation according to embodiment 1 of the present invention;
FIG. 3 is a main waveform diagram of a SiC MOSFET drive control circuit according to embodiment 2 of the present invention;
FIG. 4 is a schematic diagram of an improved structure of a SiC MOSFET drive control circuit in embodiment 2 of the present invention;
fig. 5 is a schematic diagram of an improved structure of a SiC MOSFET driving control circuit according to embodiment 2 of the present invention.
Detailed Description
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate preferred embodiments of the invention and together with the description, serve to explain the principles of the invention and not to limit the scope of the invention.
Example 1
In an embodiment of the present invention, a driving control circuit of a SiC MOSFET with adjustable driving voltage and resistance is disclosed, as shown in fig. 1, including a control chip, a SiC MOSFET device, and a power supply VG1～VG2Switch tube S1～S6Resistance RG1～RG2. Resistance value RG1＜RG2Mains voltage VG1＞VG2。
Wherein, the control chip is used for outputting the switch tube S1～S6Control signal to switch tube S1～S6A gate electrode of (1); switch tube S1、S2Respectively with a power supply VG1The positive electrode of (1) is connected; switch tube S3～S5Respectively with a power supply VG1Negative electrode of (1), power supply VG2The negative electrode of the anode is connected with the ground; switch tube S6Drain electrode of and power supply VG2The positive electrode of (1) is connected; and, a switching tube S1、S3Respectively through a resistor RG1Connected with the gate of the SiC MOSFET device, a switching tube S2、S4Respectively through a resistor RG2The grid electrode of the SiC MOSFET device is connected; switch tube S5、S6Source of a SiC MOSFET deviceThe poles are connected.
The drain electrode of the SiC MOSFET device is connected with the anode of the external load output end, the source electrode is connected with the anode of the load output end, and the load rated voltage Vbus。
In practice, fig. 2 shows the main waveforms of the SiC MOSFET drive control circuit. In the waveforms, the four uppermost waveforms are the switching tubes S1～S4The four waveforms are complementary. Resistance RG1And RG2The larger the resistance value of the driving resistor in the driving circuit is, the better the effect of inhibiting the voltage and current oscillation of the SiC MOSFET device is, but the working efficiency and the switching speed of the SiC MOSFET device are reduced along with the driving resistor, while the smaller the resistance value is, although the working efficiency and the switching speed performance of the SiC MOSFET device are better, the more the oscillation of the SiC MOSFET device in the switching process is obvious, and therefore, the driving resistance value is not too large or too small.
Compared with the prior art, in the SiC MOSFET driving circuit with adjustable driving voltage and driving resistance provided by the embodiment, in a working cycle of the SiC MOSFET device, the driving resistance and the driving voltage of the SiC MOSFET device are adjusted and changed at a preset time interval, so that the SiC MOSFET device has the capabilities of fast switching on and off and high-efficiency operation, the advantages of high frequency and high efficiency of the SiC MOSFET device are exerted, voltage and current oscillation of the SiC MOSFET device in the switching on and off processes can be effectively inhibited, transient spikes of the SiC MOSFET device and the SiC MOSFET device are reduced, and safe and reliable operation of the SiC MOSFET device is ensured.
Example 2
Optimized on the basis of embodiment 1, the SiC MOSFET drive control circuit further comprises a resistor RgCapacitor Cgd、Cgs、CdsDiode D1As shown in fig. 3.
Wherein, the resistance RG1、RG2Are respectively passed through resistors RgThe grid electrode of the SiC MOSFET device is connected; the gate of the SiC MOSFET device is further connected via a capacitor CgdConnected to the drain thereof via a capacitor CgsConnected to the source thereof; capacitor C indirectly connected in parallel between source and drain of SiC MOSFET devicedsDiode D1。
Preferably, the SiC MOSFET drive control circuit further includes a diode D2And an inductor L. As shown in fig. 4. Wherein the drain electrode of the SiC MOSFET device is connected with a diode D in parallel2And the inductor L is connected with the positive input end of the load, and the source electrode of the inductor L is connected with the negative input end of the load.
Preferably, the switch tube S for controlling the output of the chip1～S6The control signals are rectangular wave control signals; and, in one switching period of the SiC MOSFET device, the switching tube S1～S4The waveforms of the control signals are complementary so that S1～S4Starting in sequence; switch tube S5The control signal is S1、S4Superposition of control signals, switching the tube S6The control signal is S2、S3And (4) control signal superposition.
Preferably, the control chip executes the following program:
s1, according to the grid source electrode safety voltage (V) of the SiC MOSFET device-，V+) Determining the power supply VG1、VG2Amplitude range recommended to user for selecting proper power source VG1、VG2。
V+-VPreset of≤VG1≤V+
V--VPreset of≤VG2≤V- (1)
Considering the negative safety voltage V of the grid and the source of the SiC MOSFET-about-10V, a forward safety voltage V+Generally 20-25V, and the recommended operation driving voltage is-5-20V, so V in the driving circuit is designedG1＝24V，VG2This can guarantee the drive voltage requirement of the SiC MOSFET, and can guarantee that the SiC MOSFET has a smaller on-state resistance value when it is fully turned on, thereby improving the operating efficiency of the SiC MOSFET.
S2, according to the selected power supply VG1、VG2Miller voltage V in combination with SiC MOSFET devicesmiller(available in the specification for SiC MOSFET devices), a capacitor CgdResistance RgDetermining the resistance RG1、RG2The resistance value is recommended to the user for selecting the proper resistor RG1、RG2。
S3, according to the selected power supply VG1、VG2Resistance RG1、RG2Determining the switching tube S by combining the working duty ratio D and the working frequency f of the SiC MOSFET device1～S4Controlling respective on-time and off-time of the signals; off-time is 1/f-on-time.
S4, according to the obtained switch tube S1～S4Control signal according to switching tube S5The control signal is S1、S4Control signal superposition and switching tube S6The control signal is S2、S3Determining the switching tube S according to the superposition principle of control signals5、S6A control signal.
S5, outputting the switch tube S1～S6A control signal.
Preferably, in step S2, the control chip determines the resistance R by the following formulaG1Resistance value R ofG1
Figure BDA0002775273900000101
Wherein
Figure BDA0002775273900000102
Figure BDA0002775273900000103
In the formula, LpaAs parasitic inductances in the lines, RpaFor the parasitic resistance in the line, as shown in fig. 5, l, w, h are respectively the length, width and thickness of the conducting wire on the PCB circuit board on which the SiC MOSFET driving control circuit is laid, ρ is the conductivity of the conducting wire, VbusThe rated output voltage for the load.
Preferably, the control chip passes belowFormula determination of resistance RG2Resistance value R ofG2
Figure BDA0002775273900000111
In the formula, VmillerMiller voltage, C, for SiC MOSFET devicesgdIs a capacitor CgdCapacitance value of RgIs a resistance RgThe resistance value.
Preferably, the control chip determines the switch tube S by the following formula1～S4Respective on-time tau of control signals1～τ4
Figure BDA0002775273900000112
Figure BDA0002775273900000113
Figure BDA0002775273900000114
Figure BDA0002775273900000115
Wherein
Figure BDA0002775273900000116
Figure BDA0002775273900000117
Figure BDA0002775273900000118
In the formula, VthThreshold turn-on voltage, g, for SiC MOSFET devicesfsTransconductance of SiC MOSFET devices, LSIs the source parasitic inductance, R, of the SiC MOSFET deviceG1、RG2、RgAre each RG1、RG2、RgResistance value of Cgd、Cgs、CdsAre respectively Cgd、Cgs、CdsAnd the capacitance value D is the working duty ratio of the SiC MOSFET device, and f is the working frequency of the SiC MOSFET device.
Preferably, the control chip further executes the following program:
s5, according to the output current amplitude I of the user requirementODetermining the inductance value of the L by combining the working duty ratio D and the working frequency f of the SiC MOSFET device through the following formula, recommending the inductance value to a user, and selecting a proper inductance L for the user
Figure BDA0002775273900000121
Wherein D is the working duty ratio of the SiC MOSFET device, f is the working frequency of the SiC MOSFET device, and IOFor presetting the amplitude of the output current, VbusThe voltage is the rated output voltage of the load and is also the direct current bus voltage of the SiC MOSFET driving control circuit.
The SiC MOSFET drive control circuit has 4 working modes in a switching period, and the characteristics of each mode are shown in Table 1.
TABLE 1
Figure BDA0002775273900000122
Figure BDA0002775273900000131
t0～t1The time period is a mode 1 in which the switching tube S is switched1、S5And the other switching tubes are switched on and switched off. Driving voltage of SiC MOSFET deviceOriginal zero becomes VG1The driving resistance is RG1+Rg。t1Time of day, drain current iDUp to the load current ILFreewheel diode D2Cut off, this modality ends. On-delay time and drain current i of this mode SiC MOSFETDThe rise time of (2) is short and the turn-on loss is small. Design RG1＜RG2，VG1＞VG2In this mode, the initial turn-on speed of the SiC MOSFET is extremely high, and the high-frequency characteristic is reflected.
t1～t2The time period is a mode 2 in which the switching tube S is switched2And S6And the other switching tubes are switched on and switched off. The drive voltage of the SiC MOSFET device is VG1Is reduced to VG1-VG2The gate drive resistance is formed by RG1+RgIncrease to RG2+Rg。t2At that time, a SiC MOSFET turn-off signal comes, and this mode ends. In this mode, the lower driving power supply voltage and the higher gate driving resistance reduce the change speed of the drain-source voltage of the SiC MOSFET, and the voltage change speed of the freewheeling diode D is reduced accordingly, so that the turn-off overvoltage and oscillation thereof are suppressed.
t2～t3The time period is a mode 3 in which the auxiliary switch tube S3And S6And the other switching tubes are switched on and switched off. The drive voltage of the SiC MOSFET device is VG1-VG2Reduced to-VG2The gate drive resistance is formed by RG2+RgIs reduced to RG1+Rg。t3At that time, the SiC MOSFET drain-source voltage rises to the input voltage VbusThe freewheeling diode D is turned on and this mode ends. In this mode, the turn-off delay time of the SiC MOSFET and the rise time of the drain-source voltage are short, and the turn-off loss is small. Meanwhile, in the aspect of turn-off speed, the mode of negative voltage turn-off and the lower turn-off driving resistance are both beneficial to the rapid turn-off of the device.
t3～t4The time interval is a mode 4 in which the auxiliary switch tube S4And S5The power-on state is carried out,and other switching tubes are turned off. Driving voltage of SiC MOSFET device is controlled by-VG2Increase to 0, and drive resistance of gate electrode from RG1+RgIs increased to RG2+Rg。t4At that time, the SiC MOSFET on signal comes, and this mode ends. In this mode, compared with the negative voltage and low turn-off driving resistance turn-off mode of mode 3, the zero voltage and high turn-off driving resistance turn-off mode of mode 4 can reduce the change speed of the drain current of the SiC MOSFET, so that the turn-off overvoltage and oscillation thereof can be effectively suppressed.
In conclusion, by adjusting the driving voltage and the driving resistance of the SiC MOSFET in four working modes, the SiC MOSFET can be guaranteed to have extremely high turn-on and turn-off speeds, extremely low turn-off overvoltage and oscillation, and low power loss in various modes, so that the SiC MOSFET can have the advantages of high frequency, high efficiency and high reliability, and the working performance of the SiC MOSFET is improved.
The derivation of the formula referred to above is as follows:
at t0～t1During the time period, the SiC MOSFET is in the turn-on process, and the equation is written in the process according to the kirchhoff voltage and current law as follows
Figure BDA0002775273900000141
From this, the driving voltage V can be calculatedGSAs follows
Figure BDA0002775273900000142
Wherein
s＝j2πf
Wherein s is the Laplace operator and f is the operating frequency of the SiC MOSFET device, and
Figure BDA0002775273900000151
in the formulas (7) and (8), the user is according toAfter the proper SiC MOSFET model needs to be selected, the parasitic inductance L in the linepaAnd parasitic resistance RpaThe parameter value can be estimated according to the actual layout of the PCB, and an estimation formula is given by (9), wherein l, w and h are the length, the width and the thickness of the PCB conducting wire respectively, and rho is the conductivity of the PCB conducting wire.
Figure BDA0002775273900000152
It can be judged that the unknown quantity in the formula (7) is only RG1Will VGS＝VthIn the drive-in mode, the driving resistance R can be calculatedG1Is a value of (a), wherein VthThis value is obtained for the threshold turn-on voltage of the SiC MOSFET by consulting a data sheet. Drive resistor RG1Is taken as
Figure BDA0002775273900000153
Furthermore, V can be obtained by neglecting parasitic parameters in the lineGSAs follows
Figure BDA0002775273900000154
According to the drain-source voltage change rate dV set by the userDSDt, and converting VGS＝VthBy bringing in, i.e. to obtain τ1As follows
Figure BDA0002775273900000155
Due to tau1+τ2The on-time of the SiC MOSFET is D/f, wherein D and f are respectively the working duty cycle and the working frequency of the SiC MOSFET, and then tau2The results are as follows
Figure BDA0002775273900000161
At t2～t3In the time period, the SiC MOSFET is in the turn-off process, in which the capacitor CgdDue to the rate of change of drain-source voltage dVDSThe action of/dt produces a current effect with a magnitude of
Figure BDA0002775273900000162
Wherein, VmillerThis value is the miller voltage for SiC MOSFETs and can be found by consulting a data sheet. dV to bring user settingsDSDt, i.e. R is obtainedG2
Figure BDA0002775273900000163
In addition, the current change rate di of the SiC MOSFET at this stage is examinedDSDt, value of
Figure BDA0002775273900000164
Wherein tau isaAnd τbAs follows
Figure BDA0002775273900000165
In equations (15) and (16), after the user selects an appropriate SiC MOSFET model according to the need, the current change rate di set by the user is usedDSDt, can be calculated3
Figure BDA0002775273900000166
Due to tau3+τ4Is the turn-off time of the SiC MOSFET, and has a value of (1-D)/f, wherein D and f are the working duty cycle and the working frequency of the SiC MOSFET, respectively, and then tau4The results are as follows
Figure BDA0002775273900000167
The value of the inductance L depends on the output current I set by a userOIs expressed as
Figure BDA0002775273900000171
Those skilled in the art will appreciate that all or part of the flow of the method implementing the above embodiments may be implemented by a computer program, which is stored in a computer readable storage medium, to instruct related hardware. The computer readable storage medium is a magnetic disk, an optical disk, a read-only memory or a random access memory.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (10)

1. A drive voltage and resistance adjustable SiC MOSFET drive control circuit is characterized by comprising a control chip, a SiC MOSFET device and a power supply VG1～VG2Switch tube S1～S6Resistance RG1～RG2(ii) a Wherein the resistance value RG1＜RG2Mains voltage VG1＞VG2；
Control chip for outputting switch tube S1～S6Control signal to switch tube S1～S6A gate electrode of (1);
switch tube S1、S2Respectively with a power supply VG1The positive electrode of (1) is connected; switch tube S3～S5Respectively with a power supply VG1Negative electrode of (1), power supply VG2The negative electrode of the anode is connected with the ground; switch tube S6Drain electrode of (1) and power supply VG2The positive electrode of (1) is connected; and the number of the first and second electrodes,
switch tube S1、S3Respectively through a resistor RG1Connected with the gate of the SiC MOSFET device, a switching tube S2、S4Respectively through a resistor RG2The grid electrode of the SiC MOSFET device is connected; switch tube S5、S6Is connected to the source of the SiC MOSFET device.
2. The SiC MOSFET drive control circuit of claim 1, further comprising a resistor RgCapacitor Cgd、Cgs、CdsDiode D1(ii) a Wherein the content of the first and second substances,
resistance RG1、RG2Are respectively passed through resistors RgThe grid electrode of the SiC MOSFET device is connected;
the gate of the SiC MOSFET device is further connected via a capacitor CgdConnected to the drain thereof via a capacitor CgsConnected to the source thereof; capacitor C indirectly connected in parallel between source and drain of SiC MOSFET devicedsDiode D1。
3. The SiC MOSFET drive control circuit with adjustable drive voltage and resistance as claimed in claim 1 or 2, wherein the switch tube S for controlling the output of the chip1～S6The control signals are rectangular wave control signals; and the number of the first and second electrodes,
in one switching period of the SiC MOSFET device, the switching tube S1～S4The waveforms of the control signals are complementary so that S1～S4Starting in sequence; switch tube S5The control signal is S1、S4Superposition of control signals, switching tubes S6The control signal is S2、S3And (4) control signal superposition.
4. The SiC MOSFET drive control circuit with adjustable drive voltage and resistance of claim 3, wherein the control chip executes the following program:
according to the gate-source safe voltage (V) of SiC MOSFET device-，V+) Determining the power supply VG1、VG2Amplitude range recommended to user for selecting proper power source VG1、VG2(ii) a Wherein, the power supply VG1、VG2Amplitude V ofG1、VG2Satisfy the following relationships
V+-VPreset of≤VG1≤V+
|V-|-VPreset of≤VG2≤|V-|
In the formula, VPreset ofA preset value selected for a user;
according to the selected power source VG1、VG2Miller voltage V in combination with SiC MOSFET devicesmillerCapacitor CgdResistance RgDetermining the resistance RG1、RG2The resistance value is recommended to the user for selecting the proper resistor RG1、RG2；
According to the selected power supply VG1、VG2Resistance RG1、RG2Determining the switching tube S by combining the working duty ratio D and the working frequency f of the SiC MOSFET device1～S4Controlling respective on-time and off-time of the signals; off-state time is 1/f-on-state time;
according to the obtained switch tube S1～S4Control signal according to switching tube S5The control signal is S1、S4Control signal superposition and switching tube S6The control signal is S2、S3Determining the switching tube S according to the superposition principle of control signals5、S6A control signal;
output the switch tube S1～S6A control signal.
5. The SiC MOSFET drive control circuit with adjustable drive voltage and resistance of claim 4, wherein the control chip determines the switch tube S by the following formula1～S4Respective on-time tau of control signals1～τ4
Figure FDA0002775273890000021
Figure FDA0002775273890000022
Figure FDA0002775273890000023
Figure FDA0002775273890000031
Wherein
Figure FDA0002775273890000032
Figure FDA0002775273890000033
Figure FDA0002775273890000034
In the formula, VthThreshold turn-on voltage, g, for SiCMOS MOSFET devicesfsIs transconductance of a SicMOSFET device, LSIs the source parasitic inductance, R, of the SiCMOS MOSFET deviceG1、RG2、RgAre each RG1、RG2、RgResistance value of Cgd、Cgs、CdsAre respectively Cgd、Cgs、CdsAnd the capacitance value D is the working duty ratio of the SiCMOS device, and f is the working frequency of the SiCMOS device.
6. The SiCSMOSFET drive control circuit with adjustable drive voltage and resistance as claimed in claim 5, wherein the control chip determines the resistance R by the following formulaG1Resistance value R ofG1
Figure FDA0002775273890000035
Wherein
Figure FDA0002775273890000036
Figure FDA0002775273890000041
In the formula, LpaAs parasitic inductances in the lines, RpaFor parasitic resistance in the circuit, l, w and h are respectively the length, width and thickness of a lead on a PCB (printed Circuit Board) provided with a SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) drive control circuit, rho is the conductivity of the lead, and V isbusThe rated output voltage for the load.
7. The SiC MOSFET drive control circuit of claim 6, wherein the control chip determines the resistance R by the following equationG2Resistance value R ofG2
Figure FDA0002775273890000042
In the formula, VmillerMiller voltage, C, for SiC MOSFET devicesgdIs a capacitor CgdCapacitance value of RgIs a resistance RgThe resistance value.
8. The method according to any one of claims 1-2, 4-7The drive voltage and resistance adjustable SiC MOSFET drive control circuit is characterized by further comprising a diode D2An inductor L; wherein the content of the first and second substances,
the drain electrode of the SiC MOSFET device is connected with a diode D in parallel2The inductor L is connected with the positive input end of the load, and the source electrode of the inductor L is directly connected with the negative input end of the load.
9. The drive voltage and resistance tunable SiC MOSFET drive control circuit of claim 8 in which the control chip further executes the following program:
output current amplitude I according to user requirementsOAnd determining the inductance value of the L by combining the working duty ratio D and the working frequency f of the SiC MOSFET device, and recommending the inductance value to a user for selecting a proper inductance L.
10. The drive voltage and resistance tunable SiC MOSFET drive control circuit of claim 9 in which the control chip determines the inductance value of L by the equation
Figure FDA0002775273890000051
Wherein D is the working duty ratio of the SiC MOSFET device, f is the working frequency of the SiC MOSFET device, and IOFor presetting the amplitude of the output current, VbusThe rated output voltage for the load.
CN202011263085.4A 2020-11-12 2020-11-12 Drive voltage and resistance adjustable SiC MOSFET drive control circuit Pending CN114499113A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116317480A (en) * 2023-03-28 2023-06-23 重庆大学 Gate drive circuit for improving overload of power device by reducing gate resistance
CN116366044A (en) * 2023-03-28 2023-06-30 重庆大学 Gate driving circuit for improving overload of power device by adjusting gate voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116317480A (en) * 2023-03-28 2023-06-23 重庆大学 Gate drive circuit for improving overload of power device by reducing gate resistance
CN116366044A (en) * 2023-03-28 2023-06-30 重庆大学 Gate driving circuit for improving overload of power device by adjusting gate voltage
CN116366044B (en) * 2023-03-28 2024-04-30 重庆大学 Gate driving circuit for improving overload of power device by adjusting gate voltage

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