CN205265516U

CN205265516U - A dynamic adjustment device and actuating system for drive signal

Info

Publication number: CN205265516U
Application number: CN201521140666.3U
Authority: CN
Inventors: 张钦阳; 詹桦; 洪益文
Original assignee: Hangzhou Silan Microelectronics Co Ltd
Current assignee: Hangzhou Silan Microelectronics Co Ltd
Priority date: 2015-12-31
Filing date: 2015-12-31
Publication date: 2016-05-25
Anticipated expiration: 2025-12-31

Abstract

The utility model provides a dynamic adjustment device and an actuating system of drive signal. This drive signal is used for driving the switch of MOS switch tube, this dynamic adjustment device includes pull -up MOS pipe, the grid termination is received and is used for controlling its pull -up control signal who switches on or turn -off, one end during the source terminal is held with the drain electrode is coupled to the mains voltage end, the other end is coupled to the grid end of this MOS switch tube, drop -down MOS pipe, the grid termination is received and is used for controlling its drop -down control signal who switches on or turn -off, one end during the source terminal is held with the drain electrode is coupled to circuit ground end, the other end is coupled to the grid end of this MOS switch tube, and controlled voltage source module, manage when being opened by this drop -down control signal at this drop -down MOS, grid end to this drop -down MOS pipe provides controlled voltage so that the bars - source voltage of this drop -down MOS pipe rises to mains voltage with dynamic adjustable speed, thereby the shutoff with this MOS switch tube of changeable driving force drive.

Description

For driving dynamic adjustments device and the drive system of signal

Technical field

The utility model relates to the actuation techniques in Switching Power Supply, relates in particular to the dynamic tune for driving signalRegulating device and drive system.

Background technology

At present, in the power output off-line type AC-DC translation circuit such as medium and small, (primary is controlled on former limitSideregulation, PSR) inverse-excitation type variator adopts elementary feedback control technology, eliminates the anti-of light isolationFeedback and at the secondary regulating circuit of traditional design, simplified design, widely should in fields such as household electrical appliancesWith.

Fig. 1 is that inverse-excitation type AC-DC transfer circuit system structure chart is controlled on typical former limit. As shown in Figure 1,Varying circuit comprises off-line type AC-DC Drive and Control Circuit and peripheral circuit.

Referring to Fig. 1, general drive circuit 101 comprises output detections module and Ton (ON time)/Toff(turn-off time) control module. Output detections module is mainly assisted the feedback signal of winding by detection,To information such as output voltage, demagnetization time, ON time, input voltages. Ton/Toff control module basisOutput detections module, to output voltage and output current analysis, by changing Ton and Toff time, producesThe driving signal of driven MOS FET switching tube M1, realizes the function of exporting constant voltage, output constant current.

This off-line type AC-DC converter circuit comprise rectifier circuit (diode VD1, diode VD2,Diode VD3, diode VD4 composition), filter capacitor C1, (Np is primary inductance circle to transformerNumber, Ns is the secondary inductance number of turn, Naux is the auxiliary winding inductance number of turn), output commutation diode VD5,Output filter capacitor C2, feedback divider resistance R3 and R2, sampling resistor RS, switch mosfet pipe(hereinafter referred is MOS switching tube) M1 and drive circuit 101.

Fig. 2 is typical BUCK type on-off circuit, mainly comprises the peripheral devices such as inductance, electric capacity, resistancePart and drive circuit. Particularly, as shown in Figure 2 BUCK converter circuit comprise magnetizing inductance L1,Input filter capacitor C1, commutation diode D1, output filter capacitor C2, sampling resistor R1, R2 and driveMoving circuit 102. Drive circuit 102 generally comprises output detections module and Ton/Toff control module. OutputDetection module is sampled and is obtained output information output voltage by R1 and R2. Ton/Toff control module is crossed and is changedBecome Ton and Toff time, produce the driving signal of driven MOS switching tube M1, realize output constant voltage,The function of output constant current.

In above-mentioned Switching Power Supply transfer circuit system, MOS switching tube M1, as switching device, existsChange voltage change faster, and larger switching loss. The not driving to MOS switching tube M1Do optimization process, can cause more unmanageable EMI (electromagnetic interference), lower average efficiency, andLarge stand-by power consumption.

Utility model content

Below provide the brief overview of one or more aspects so that the basic comprehension to these aspects to be provided. This is generalState detailed the combining of the not all aspect contemplating and look at, and neither be intended to point out out the key of all aspectsOr the also non-scope of attempting to define any or all aspect of decisive key element. Its unique object is will be to simplifySome concepts that form provides one or more aspects are thought the order of the more detailed description providing after a while.

It is a kind of for driving the dynamic adjustments device and of signal that one of the purpose of this utility model is to providePlant drive system.

According to one side of the present utility model, provide a kind of for driving the dynamic adjustments device of signal, shouldDrive the switch of signal for driven MOS switching tube, this dynamic adjustments device comprises:

On draw metal-oxide-semiconductor, gate terminal receive for control its conducting or shutoff on draw control signal, source electrodeOne end in end and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the grid of this MOS switching tubeEnd,

Drop-down metal-oxide-semiconductor, gate terminal receives the drop-down control signal for controlling its conducting or shutoff, source electrodeOne end in end and drain electrode end is coupled to circuit and holds, and the other end is coupled to the gate terminal of this MOS switching tube,And

Controlled voltage source module, at this drop-down metal-oxide-semiconductor in the time being opened by this drop-down control signal, under thisThe gate terminal of drawing metal-oxide-semiconductor controlled voltage is provided so that the gate source voltage of this drop-down metal-oxide-semiconductor with dynamically adjustableSpeed rise to supply voltage, thereby drive the shutoff of this MOS switching tube with variable driving force.

In one example, loading condition is heavier, and this controlled voltage source module is to the grid of this drop-down metal-oxide-semiconductorThe controlled voltage extremely providing changes more slow, rises to supply voltage with the gate source voltage of the drop-down metal-oxide-semiconductor that slows downSpeed, thereby reduce driving force, and loading condition is lighter, this controlled voltage source module is drop-down to thisThe controlled voltage that the gate terminal of metal-oxide-semiconductor provides changes faster, to accelerate grid-source electricity of this drop-down metal-oxide-semiconductorVoltage rise is to the speed of supply voltage, thus raising driving force.

In one example, this controlled voltage source circuit comprises:

Drop-down charge and discharge capacitance, is coupled between the gate terminal and source terminal of this drop-down metal-oxide-semiconductor; And

Dynamic current generation module, dynamically generates size for the loading condition based on this MOS switching tubeThe charging and discharging currents changing, the output of this dynamic current generation module is coupled to the grid of this drop-down metal-oxide-semiconductorExtremely, with in the time that this drop-down metal-oxide-semiconductor is opened, by the discharging and recharging of this drop-down charge and discharge capacitance, to thisThe grid of drop-down metal-oxide-semiconductor provides controlled voltage.

In one example, this dynamic current generation module generates less discharging and recharging under heavier loading conditionElectric current, rises to the speed of supply voltage with the gate source voltage of this drop-down metal-oxide-semiconductor that slows down, and lighter negativeUnder carrier strip part, generate larger charging and discharging currents, rise to power supply electricity to accelerate the gate source voltage of drop-down metal-oxide-semiconductorThe speed of pressing.

In one example, between the gate terminal of this drop-down metal-oxide-semiconductor and this dynamic current generation module, be provided with downDraw current switch pipe to control the break-make of this charging and discharging currents, the gate terminal of this pull-down current switching tube is coupled toThis drop-down control signal, with when this this drop-down metal-oxide-semiconductor conducting of drop-down control signal control, makes this drop-downThe conducting of current switch pipe provides charging and discharging currents with the gate terminal to this drop-down metal-oxide-semiconductor.

In one example, this controlled voltage source circuit also comprises drop-down reset switch pipe, this drop-down reset switchOne end in source terminal and the drain electrode end of pipe is coupled to the gate terminal of this drop-down MOS switching tube, and the other end existsThis drop-down metal-oxide-semiconductor is coupled to power voltage terminal while being PMOS pipe and is NMOS at this drop-down metal-oxide-semiconductorWhen pipe, be coupled to circuit and hold, this drop-down reset switch pipe has the conducting contrary with this pull-down current switching tubeOr off state.

In one example, the one end in source terminal and the drain electrode end of this pull-down current switching tube is coupled to that this is dynamicThe output of electric current generation module, the other end is coupled to the gate terminal of this drop-down metal-oxide-semiconductor.

In one example, this controlled voltage source circuit also comprises pull-down current mirror circuit, and this dynamic current generatesModule is coupled to the gate terminal of this drop-down metal-oxide-semiconductor, this pull-down current switch via this pull-down current mirror circuitPipe is coupled to this pull-down current mirror circuit to control the break-make of this pull-down current mirror circuit.

In one example, this pull-down current mirror circuit comprises:

The first current lens unit, the mirror image input of this first current lens unit couples this dynamic current and generates mouldThe output of piece; And

The second current lens unit, the mirror image input of this second current lens unit is via this pull-down current switching tubeBe coupled to the mirror image output of this first current lens unit, the mirror image output of this second current lens unit couplesTo the gate terminal of this drop-down metal-oxide-semiconductor.

In one example, this controlled voltage source circuit also comprises:

Supplemental current generation module, for generating supplemental current;

Supplemental current switching tube, the output of this supplemental current generation module is via this supplemental current switching tube couplingBe connected to the gate terminal of this drop-down metal-oxide-semiconductor, this supplemental current switching tube is in the unlatching of this drop-down metal-oxide-semiconductorIn journey, in the time that the grid voltage of this MOS switching tube changes, conducting is carried with the gate terminal to this drop-down metal-oxide-semiconductorFor supplemental current, to accelerate the variation of gate source voltage of this drop-down metal-oxide-semiconductor.

In one example, this supplemental current switching tube and this drop-down metal-oxide-semiconductor are all NMOS pipe, this benefitThe gate terminal of charging stream switching tube is coupled to the gate terminal of this drop-down metal-oxide-semiconductor via phase inverter, to control thisThe break-make of supplemental current switching tube.

In one example, this dynamic adjustments device also comprises:

Turn off analysis circuit, its input is coupled to the gate terminal of this MOS switching tube, to detect this MOSThe grid voltage of switching tube, output is coupled to the gate terminal of this supplemental current switching tube, with at this MOSWhen changing, opens the grid voltage of switching tube this supplemental current switching tube, and at the grid of this MOS switching tubeWhen voltage is constant, turn-off this supplemental current switching tube.

In one example, this turn off analysis circuit comprises:

Comparator, the first input end of this comparator is coupled to the gate terminal of this MOS switching tube, and second is defeatedEnter to hold the gate terminal that is coupled to this MOS switching tube via resistance simultaneously via capacity earth, output couplesTo the gate terminal of this supplemental current switching tube.

In one example, this supplemental current generation module comprises:

Mirror image circuit, for extremely should the mirror image of this charging and discharging currents of this dynamic current generation module generationThe gate terminal of drop-down metal-oxide-semiconductor is to provide this supplemental current.

In one example, this controlled voltage source module draws metal-oxide-semiconductor on this, being drawn control signal to open on thisQi Shi, to drawing the gate terminal of metal-oxide-semiconductor to provide controlled voltage so that draw grid-source electricity of metal-oxide-semiconductor on this on thisPress with dynamic adjustable speed and rise to supply voltage, thereby drive this MOS switch with variable driving forceThe unlatching of pipe.

In one example, loading condition is heavier, and this controlled voltage source module is to the grid that draw metal-oxide-semiconductor on thisThe controlled voltage extremely providing changes more slow, rises to supply voltage with the gate source voltage that draws metal-oxide-semiconductor on slowing downSpeed, thereby reduce driving force, and loading condition is lighter, this controlled voltage source module is to drawing on thisThe controlled voltage that the gate terminal of metal-oxide-semiconductor provides changes faster, to accelerate to draw on this grid-source electricity of metal-oxide-semiconductorVoltage rise is to the speed of supply voltage, thus raising driving force.

In one example, this controlled voltage source circuit comprises:

On draw charge and discharge capacitance, be coupled between the gate terminal and source terminal of drawing metal-oxide-semiconductor on this; And

Dynamic current generation module, dynamically generates size for the loading condition based on this MOS switching tubeThe charging and discharging currents changing, the output of this dynamic current generation module is coupled to the grid that draw metal-oxide-semiconductor on thisExtremely, when drawing metal-oxide-semiconductor to open on this, by drawing discharging and recharging of charge and discharge capacitance on this, to thisOn draw the grid of metal-oxide-semiconductor that controlled voltage is provided.

In one example, this dynamic current generation module generates less discharging and recharging under heavier loading conditionElectric current, draws on this gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage to slow down, and lighter negativeUnder carrier strip part, generate larger charging and discharging currents, to draw the gate source voltage of metal-oxide-semiconductor to rise to power supply electricity on acceleratingThe speed of pressing.

In one example, on this, draw between the gate terminal of metal-oxide-semiconductor and this dynamic current generation module and be provided withDraw current switch pipe to control the break-make of this charging and discharging currents, the gate terminal of this pull-up current switching tube is coupled toOn this, draw control signal, when drawing control signal control to draw metal-oxide-semiconductor conducting on this on this, make to draw on thisThe conducting of current switch pipe provides charging and discharging currents with the gate terminal of drawing metal-oxide-semiconductor on this.

In one example, this controlled voltage source circuit also comprises draws reset switch pipe, draws reset switch on thisOne end in source terminal and the drain electrode end of pipe is coupled to the gate terminal of drawing MOS switching tube on this, and the other end existsWhile drawing metal-oxide-semiconductor to be PMOS pipe on this, being coupled to power voltage terminal and on this, drawing metal-oxide-semiconductor is NMOSWhen pipe, be coupled to circuit and hold, on this, draw reset switch pipe to there is the conducting contrary with this pull-up current switching tubeOr off state.

In one example, the one end in source terminal and the drain electrode end of this pull-up current switching tube is coupled to that this is dynamicThe output of electric current generation module, the other end is coupled to the gate terminal of drawing metal-oxide-semiconductor on this.

In one example, this controlled voltage source circuit also comprises pull-up current mirror circuit, and this dynamic current generatesModule is coupled to the gate terminal of drawing metal-oxide-semiconductor on this via this pull-up current mirror circuit, this pull-up current switchPipe is coupled to this pull-up current mirror circuit to control the break-make of this pull-up current mirror circuit.

In one example, this pull-up current mirror circuit comprises:

The 3rd current lens unit, the mirror image input of the 3rd current lens unit couples this dynamic current and generates mouldThe output of piece; And

The 4th current lens unit, the mirror image input of the 4th current lens unit is via this pull-up current switching tubeBe coupled to the mirror image output of the 3rd current lens unit, the mirror image output of the 4th current lens unit couplesTo the gate terminal of drawing metal-oxide-semiconductor on this.

In one example, this dynamic current generation module comprises:

Error amplifier, one input end receives COMP voltage, and another input is coupled to its output,Output is by resistance eutral grounding, and wherein this COMP voltage and load weight condition are inversely proportional to; And

Current mirroring circuit, the input that the output of this error amplifier is coupled to this current mirroring circuit with fromThis current mirroring circuit is exported this charging and discharging currents.

According on the other hand of the present utility model, a kind of drive system is provided, comprising:

MOS switching tube;

As above for driving the dynamic adjustments device of signal; And

Drive circuit, draws control signal and drop-down control signal for generating on this.

According to scheme of the present utility model, at different output states, due to the change of dynamic current IbiasDChange, the rate of change in controlled linear voltage source also changes. In upper frequency, dynamic currentIbiasD is less, and the rate of change in controlled linear voltage source is little, above draws the conducting with drop-down MOSFETResistance variations is slow, and in switching process, dv/dt changes slowly, and EMI performance is good. When frequency is lower,Dynamic current IbiasD is larger. The rate of change in controlled linear voltage source is large, above draws with drop-down MOSFET'sConducting resistance changes fast, postpones littlely, hands over more loss to reduce.

Brief description of the drawings

After reading in conjunction with the following drawings the detailed description of embodiment of the present disclosure, can understand better thisThe above-mentioned feature and advantage of utility model. In the accompanying drawings, each assembly is not necessarily drawn in proportion, and toolThere is the assembly of similar correlation properties or feature may there is identical or close Reference numeral.

Fig. 1 shows the circuit diagram of typical off-line type AC-DC change-over circuit;

Fig. 2 shows the circuit diagram of typical BUCK change-over circuit;

Fig. 3 shows the schematic diagram of traditional gate driving scheme;

Fig. 4 shows the schematic diagram of another traditional gate driving scheme;

Fig. 5 shows the equivalent analysis circuit diagram of typical MOSFET pipe;

Switching waveform when the MOS switching tube that Fig. 6 shows traditional fixed drive ability is openedSchematic diagram;

Switching waveform when the MOS switching tube that Fig. 7 shows traditional fixed drive ability turn-offsSchematic diagram;

Fig. 8 show according to the utility model on the one hand the schematic diagram of grid dynamic driving;

Fig. 9 show according to the utility model on the one hand the schematic diagram of grid dynamic driving;

Figure 10 shows according to the utility model MOS switch with dynamic driving ability on the one handThe schematic diagram of switching waveform when pipe is opened;

Figure 11 shows according to the utility model MOS switch with dynamic driving ability on the one handThe schematic diagram of switching waveform when pipe turn-offs;

Figure 12 show according to the utility model on the one hand carry out showing of dynamic driving according to frequency loadIntention;

Figure 13 show according to the utility model on the one hand for above drawing the dynamic driving electricity of PMOS pipeLu Tu;

Figure 14 show according to the utility model on the one hand for above drawing the dynamic driving electricity of NMOS pipeLu Tu;

Figure 15 shows according to the utility model dynamic driving electricity for pull-down NMOS pipe on the one handLu Tu;

Figure 16 show according to an embodiment of the present utility model for above drawing dynamically driving of PMOS pipeMoving circuit diagram;

Figure 17 shows dynamically the driving for pull-down NMOS pipe according to an embodiment of the present utility modelMoving circuit diagram;

Figure 18 show according to an embodiment of the present utility model on draw NMOS pipe and drop-downThe dynamic driver circuit figure of NMOS pipe;

Figure 19 shows while shutoff according to the MOS switching tube with dynamic driving ability of an embodimentThe schematic diagram of the switching waveform of waiting;

Figure 20 show according to another embodiment of the present utility model on draw NMOS pipe and drop-downThe dynamic driver circuit figure of NMOS pipe;

Figure 21 shows according to the MOS switching tube with dynamic driving ability of another embodiment and turn-offsTime the schematic diagram of switching waveform; And

Figure 22 shows according to the schematic diagram of dynamic current of the present utility model and load frequency relation.

Detailed description of the invention

Below in conjunction with the drawings and specific embodiments, the utility model is described in detail. Note, below in conjunction with attachedThe aspects that figure and specific embodiment are described is only exemplary, and should not be understood to of the present utility modelProtection domain carries out any restriction.

Traditional gate driving scheme is being difficult to balance aspect electromagnetic interference EMI and drive efficiency. EMI withLoad increase the weight of serious gradually. Now, often need to reduce driving force to improve EMI. But, toolThere is the drive scheme of lower driving force in the situation that load is heavier, no doubt can alleviate EMI, but when negativeCarry when lighter EMI problem itself also not serious, now lower driving force has affected drive efficiency. SeparatelyOn the one hand, if improve driving force in order to pursue efficiency,, in the situation that load is heavier, can makeEMI problem is more outstanding.

Fig. 3 and Fig. 4 show the schematic diagram of traditional gate driving scheme. Driving side shown in Fig. 3Case comprises draws metal-oxide-semiconductor and drop-down metal-oxide-semiconductor, draw in figure metal-oxide-semiconductor be PMOS pipe (referred to asOn draw PMOS pipe), drop-down metal-oxide-semiconductor is NMOS pipe (referred to as pull-down NMOS pipe). On drawPMOS pipe is connected to supply voltage VCC, and pull-down NMOS pipe is connected to circuit (GND). DriveCircuit 401 produces control signal S_PAnd S_NCarry out driven MOS switching tube M1.

When on while drawing the conducting of PMOS pipe, pull-down NMOS pipe to turn-off, open MOS switching tube M1; WhenOn draw that PMOS pipe turn-offs, when pull-down NMOS pipe conducting, turn-off MOS switching tube M1.

The drive current of the driving force of drive circuit when above drawing metal-oxide-semiconductor and drop-down metal-oxide-semiconductor conducting hasClose, in other words, the conducting resistance of metal-oxide-semiconductor and drop-down metal-oxide-semiconductor is relevant with above drawing, because conducting resistanceLarger, drive current is less, and driving force is more weak, otherwise conducting resistance is less, and drive current is larger, drivesKinetic force is larger.

Because the conducting resistance of PMOS pipe and NMOS pipe is larger with technique change, can adopt large-sizeOn draw PMOS pipe and pull-down NMOS pipe. In order to improve EMI, need to reduce driving force, thereforeIncrease by two resistance of Rp and Rn and increased conducting resistance, to reduce drive current and then to realize reducing and driveThe object of kinetic force. Fig. 4 shows this scheme. This scheme is come by fixing resistance R p and RnIn raising, draw the conducting resistance of metal-oxide-semiconductor and drop-down metal-oxide-semiconductor. But as mentioned above, when load lighter,When EMI problem is not outstanding, higher conducting resistance has caused lower driving force.

Fig. 5 shows typical MOSFET equivalent analysis circuit. In optimization Switching Power Supply, MOSFETOptimization mainly from the parasitic structure of self, parasitic parameter has determined the switch performance of MOSFET.The parasitism of Fig. 6 mainly comprises following content: grid level resistance R_G, the parasitic capacitance C of grid end and source_GS, gridThe parasitic capacitance C of end and drain terminal_GD, drain terminal resistance R_D, source resistance R_SR, the parasitism electricity of drain terminal and sourceHold C_DS, and parasitic diode D. The parasitic parameter R of MOSFET_G、C_GD、C_GSSize determineIts switching speed. When parasitic parameter is certain, the drive current of grid level determines opening of MOSFETPass speed, the theory that this is regulated drive current and then regulated driving force by conducting resistance in Fig. 4 justBasis.

Taking the traditional gate driving scheme in Fig. 3 as example, illustrate that below in conjunction with Fig. 6 and Fig. 7 MOS opensClose the switching characteristic of pipe. Fig. 6 shows the work wave of the inverse-excitation type variator under discontinuous mode, in order to sayThe switch conduction characteristic of bright MOS switching tube. I in Fig. 6_LFor MOS switching tube is from drain terminal to sourceElectric current, S_NAnd S_PThe control signal that is respectively pull-down NMOS pipe and above draws PMOS pipe, VGS is for drivingThe voltage waveform of moved end, VDS is the drain terminal of MOS switching tube and the waveform of source, Rds_PMOS is upperDraw the conducting resistance of PMOS pipe. On when conducting, draw PMOS tube impedance very little, very large when closing.

In the t0 moment, can produce start signal by logic, drop-down control signal S_NFrom high to low, S_NControlPull-down NMOS pipe processed is turn-offed. By certain unlatching Dead Time (t0～t1), draw in the time of t1 and control letterNumber S_PIn control, draw PMOS pipe, make its conducting. Because the PMOS pipe of conducting exists fixing electric conduction, so there is certain opening process in resistance Rds_PMOS.

Typical MOS switching tube conducting is divided into 3 stages, t1～t2 (open and postpone) be VGS from 0 toIn the Vth stage, drive current is mainly given parasitic capacitance C_GSCharging. This MOS switching tube is still in turn-offing shapeState, VDS and I_LWaveform is constant. The parameters such as VDS magnitude of voltage is by the turn ratio of transformer, input voltage determine,Can be 300V. I_LBecause On current is not 0. T2～t3 is that VGS remains unchanged the stage, drive currentThe main parasitic capacitance C that gives_DSCharging. This stage is also Miller platform, due to the conducting of MOS switching tube,VDS starts to turn to low-voltage from high-voltage variable, and the slope dv/dt that VDS declines is mainly by parasitic capacitance C_DSDetermine with Rds_PMOS. This process is due to the drain terminal existence of parasitic capacitance over the ground, I_LForm peak current,For the variator of peak point current control, generally can shield this spike owing to easily peak point current being produced to erroneous judgementElectric current. T3～t4 stage, drive current continued to C in order to open final stage_GSCharging, MOS switching tube electricityPress and be changed to VCC near vth, peak point current rises with the slope fixed, its slope by input voltage andTransformer inductance determines.

Through as above three phases, MOS switching tube starts conducting. In t2～t3 stage, due to voltage fromIt is very fast that VDS (for example 300V) changes to 0 the speed of being close to, and general 100ns left and right, so can leadCause EMI problem. In open stage, can see the voltage VDS of MOS switching tube and and flow through MOSThe electric current I of switching tube_LHanding over area is more 0 substantially, so loss is less, now subject matter is EMIProblem.

As shown in Figure 6, because driving force is subject to the constraint of fixing conducting resistance Rds_PMOS, forObtain good EMI, only have the conducting resistance that employing is larger, example increases resistance R p as illustrated in fig. 4.Now, although can reduce EMI, there is larger unlatching to postpone. Although loss is less, also canIncrease this part loss. And lighter in load, in the situation that EMI problem is not given prominence to, larger unlatching is prolongedThere is no need late.

The switch turn-off characteristic of MOS switching tube can be set forth explanation by Fig. 7. At t5 moment, peak valueElectric current I_LReach desirable peak point current, in the t6 moment, above draw control signal S_PIn control, draw PMOS pipe,It is turn-offed, drop-down control signal S_NControl pull-down NMOS pipe, it is opened. Due to the NMOS of conductingThere is fixing conducting resistance Rds_NMOS in pipe, so there is certain turn off process.

In the t5 moment, when electric current reaches peak point current, start to turn-off t5～t6 at t6 moment MOS switching tubeFor turn-offing Dead Time. The shutoff of typical MOS switching tube is divided into 4 time periods, and t6～t7 belongs to shutoffPostponing, is the MOS switching tube grid step voltage VGS decline stage for the first time. The MOS switching tube in this stageVGS voltage drop to the (Vth+I that overdrives from VCC_MOSFET/g_MOSFET), the needed time byGrid capacitance and driving resistance R ds_NMOS determine, can be reduced to the RC circuit of one-level. This stage byIn parasitic capacitance C_GSExistence, the VCS waveform that is coupled to current sample end also can occur a bit little underFall. T7～t8 is that VGS remains unchanged the stage, is also referred to as and turn-offs Miller platform, and now drive current is mainGive parasitic capacitance C_DSCharging. This stage and t2～t3 are similar, and due to the conducting of NMOS pipe, VDS startsBe changed to high voltage from low-voltage, the slope dv/dt that VDS rises is mainly by parasitic capacitance C_DSWithRds_NMOS determines. T8～t9 is the second segment fall time of VGS, is to turn-off final stage, drives from crossingMoving voltage drop is threshold voltage vth, this stage peak point current I_LElectric current drops to zero. After t9 VGS fromVth is changed to 0. Can analyze and obtain handing over more loss to exist in t7～t9 time period.

Similarly, in the off-phases of MOS switching tube, because driving force is subject to fixing conducting resistanceThe constraint of Rds_NMOS, in order to obtain good EMI, only has the conducting resistance that employing is larger, for example asIncrease as shown in Figure 4 resistance R n. Although can reduce EMI, there is larger unlatching to postpone, hand over moreLoss increases, and larger delay simultaneously there is no need completely in the time of underloading, because bring larger peak valueElectric current, increases stand-by power consumption.

In the utility model, dynamically drive scheme of one is provided, in the situation that load is heavier, fallLow driving force, to reduce EMI problem, on the other hand, when in the lighter situation of load, improves and drivesAbility, reduces switching delay to improve switching speed. As mentioned above, certain in the parameter of MOS switching tubeSituation under, driving force with above draw the conducting resistance of metal-oxide-semiconductor and drop-down metal-oxide-semiconductor relevant. Therefore,Draw metal-oxide-semiconductor and drop-down metal-oxide-semiconductor on opening time, by making gate source voltage absolute value | VGS| is from 0 graduallyBecome VCC conducting resistance is reduced gradually, for example, for PMOS pipe, make gate terminal voltage from VCCGradual change to 0, for NMOS pipe, makes gate terminal voltage from 0 gradual change to VCC.

Taking NMOS pipe as example, heavier when load, need to reduce driving force time, can make gate terminal electricityPress with slower speed and rise to VCC from 0, thereby in this process, make conducting resistance step-down gradually, so thatNMOS pipe maintains higher conducting resistance in opening procedure, plays reduction drive current, reduces and drives energyThe effect of power. Lighter when load, EMI problem is outstanding, while therefore wishing to have faster switching speed,Can make gate terminal voltage rise to VCC with speed faster from 0, thereby conducting resistance is reduced quicklyTo minimum, so that NMOS pipe has lower conducting resistance in opening procedure, play to increase drivingElectric current, promotes the effect of driving force.

Therefore, by the pace of change of drawing the grid voltage of metal-oxide-semiconductor and/or drop-down metal-oxide-semiconductor on regulating,Dynamically regulate the size of driving force.

Fig. 8 shows according to the schematic diagram of grid dynamic driving of the present utility model, has specifically illustrated and has drawnMetal-oxide-semiconductor is the situation of PMOS pipe. As shown in the figure, drive than traditional grid, at the upper PMOS that drawsBetween pipe and drive circuit, increased controlled voltage source module, this controlled voltage source module is for drawing upperPMOS pipe draws control signal S on quilt_PWhen unlatching, upwards draw the gate terminal of PMOS pipe that controlled electricity is providedPress so that on draw PMOS pipe gate source voltage rise to supply voltage with dynamic adjustable speed, thereby with canThe unlatching of the driving force driven MOS switching tube M1 becoming.

Loading condition is heavier, and what this controlled voltage source module provided to the gate terminal of drawing NMOS pipe on this is subject toControl voltage change is more slow, to draw the gate source voltage of NMOS pipe to rise to the speed of supply voltage on slowing down, fromAnd reduction driving force, and loading condition is lighter, controlled voltage source module upwards draws the grid of NMOS pipeThe controlled voltage that provides of end changes faster, to draw the gate source voltage of metal-oxide-semiconductor to rise to supply voltage on acceleratingSpeed, thus driving force improved. The controlled voltage source here, upper trombone slide, lower trombone slide have formed this practicalityNovel for driving the dynamic adjustments device of signal.

As shown in Figure 8, this controlled voltage source comprises two switch S 1 and S2, charge and discharge capacitance C, andDynamic current source I. S2 controls the charging to capacitor C, and S1 controls the electric discharge to capacitor C. Discharge processC1 voltage changes to 0 from VCC, at the upper voltage source that draws the gate terminal of PMOS pipe to produce linear changeV_{DRIVER_P}, above drawing the resistance of PMOS pipe to approach linear is small resistor from large resistance variations.

Here, the size of the current Ib iasD providing by adjusting dynamic current source I, just can control and drawPMOS pipe becomes the speed of small resistor from large resistance, driving while controlling the unlatching of MOS switching tube M1Kinetic force.

Note, the capacitor C here can be additional electric capacity, draws the parasitism of PMOS pipe on can being alsoElectric capacity.

Fig. 9 shows according to the schematic diagram of grid dynamic driving of the present utility model, has specifically illustrated and has drawnMetal-oxide-semiconductor is the situation of NMOS pipe. As shown in the figure, drive than traditional grid, at the upper NMOS that drawsBetween pipe and drive circuit, increased controlled voltage source module, this controlled voltage source module is for drawing upperNMOS pipe draws control signal S on quilt_PWhen unlatching, upwards draw the gate terminal of NMOS pipe that controlled electricity is providedPress so that on draw NMOS pipe gate source voltage rise to supply voltage with dynamic adjustable speed, thereby with canThe unlatching of the driving force driven MOS switching tube 1 becoming.

As shown in Figure 9, this controlled voltage source comprises two switch S 1 and S2, charge and discharge capacitance C, andDynamic current source I. S2 controls the charging to capacitor C, and S1 controls the electric discharge to capacitor C. Charging processC1 voltage changes to VCC from 0, at the upper voltage source that draws the gate terminal of NMOS pipe to produce linear changeV_{DRIVER_N}, above drawing the resistance of NMOS pipe to approach linear is small resistor from large resistance variations.

Here, the size of the current Ib iasD providing by adjusting dynamic current source I, just can control and drawNMOS pipe becomes the speed of small resistor from large resistance, driving while controlling the unlatching of MOS switching tube M1Kinetic force.

Note, the capacitor C here can be additional electric capacity, draws the parasitism of NMOS pipe on can being alsoElectric capacity.

Fig. 8 and Fig. 9 only show for the dynamic driving of above drawing metal-oxide-semiconductor, for drop-down metal-oxide-semiconductorDynamic driving principle with on draw metal-oxide-semiconductor identical, therefore not shown. Dynamic driving can only be applied toOn draw metal-oxide-semiconductor with the unlatching of dynamic driving MOS switching tube, only for drop-down metal-oxide-semiconductor with dynamic drivingThe shutoff of MOS switching tube or be simultaneously applied to draws metal-oxide-semiconductor and drop-down metal-oxide-semiconductor with dynamicallyThe unlatching of driven MOS switching tube and turn-off both.

Figure 10 and Figure 11 show the MOS according to one side of the present utility model with dynamic driving abilitySwitching waveform when switching waveform when switching tube is opened and shutoff.

Waveform schematic diagram when Figure 10 is the switch opens of a dynamic driving ability of the present utility model,VCS waveform is current sampling resistor R_SVoltage waveform, the voltage waveform that VGS is drive end, VDS isThe waveform of MOS switching tube drain terminal and source, S_NAnd S_PBe respectively pull-down NMOS pipe and on draw PMOSThe control signal of pipe. Rds_PMOS draws the conducting resistance of PMOS pipe on being, different from Fig. 6, shouldConducting resistance on-fixed value, but linear change, conducting resistance is by diminishing greatly gradually, can find withFixing conducting resistance (Fig. 6) is compared, and in t2～t3 stage, because resistance is larger, produces dv/dt slowly,Thereby can effectively reduce EMI.

Figure 11 is the switching waveform signal of the switch of a dynamic driving ability of the present utility model when turn-offingFigure, the conducting resistance that wherein Rds_NMOS is pull-down NMOS pipe, different from Fig. 7, this conductingResistance on-fixed value, but linear change, conducting resistance is by diminishing greatly gradually. Can find with fixingConducting resistance is compared, and in t7～t8 stage, because resistance is larger, produces dv/dt slowly, thereby can haveThe minimizing EMI of effect.

Figure 12 is a schematic diagram that carries out dynamic driving according to frequency load of the present utility model. This figure explainsOn having stated, draw metal-oxide-semiconductor resistance and drop-down metal-oxide-semiconductor resistance how to change driving force according to load. S_PFor on draw control signal, the current Ib iasD of dynamic driving can be by the voltage signal of VCC, COMP(compensation) voltage signal, line loss current signal, Ton signal, duty cycle signals obtain.

In underloading, there are lower VCC, higher COMP voltage, larger line loss electric current,Little Ton and dutycycle. In heavily loaded, have higher VCC voltage, less COMP voltage,Less line loss electric current, larger Ton and dutycycle.

Along with diminishing gradually of load, frequency and peak point current also can diminish accordingly, and the EMI of generation alsoCan diminish gradually, so one of advantage of dynamic driving is exactly when meeting EMI requirement, according to negativeThe situation of carrying, quickening driving force gradually, reduces the friendship of MOS switching tube and gets over loss. Simultaneously in zero loadTime, there is the strongest driving force, can effectively reduce turn-off delay and the peak point current that increases, therebyPlay the effect that reduces stand-by power consumption.

Therefore, index that can reflected load situation based on COMP voltage etc. provides IbiasD, withRegulate driving force. For example, the IbiasD providing can be directly proportional to COMP voltage, and load is heavier, COMPVoltage is less, and IbiasD is less, and driving force is less, thereby alleviates EMI, otherwise load is lighter, COMPVoltage is larger, and Ibias is larger, and driving force is stronger, thereby lifting switch speed reduces power consumption. Below giveGo out the embodiment that IbiasD is provided based on COMP voltage, but also can be based on any and loading conditionRelevant index provides IbiasD.

Figure 13 show according to the utility model on the one hand for above drawing the dynamic driving electricity of PMOS pipeLu Tu. In the drawings, above draw metal-oxide-semiconductor to adopt PMOS pipe. As shown in the figure, above draw the source electrode of PMOS pipeBe coupled to VCC, drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to drop-down simultaneouslyOne end (being the drain electrode end of NMOS pipe in figure) in source terminal or the drain electrode end of metal-oxide-semiconductor.

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1302. On drawBetween the gate terminal of PMOS pipe and source terminal, there is charge and discharge capacitance C. This charge and discharge capacitance C can bePMOS manages primary source-grid parasitic capacitance, can be also extra additional electric capacity.

On draw the gate terminal of PMOS pipe to receive from drawing control signal S on drive circuit 1301_PTo controlOn draw PMOS pipe turn-on and turn-off. For example, work as S_PDuring for low level, above draw the conducting of PMOS pipe.

Dynamic current generation module 1302 is in order to dynamically to generate the charging and discharging currents of size variation especially.The output of dynamic current generation module 1302 is coupled to the gate terminal of drawing PMOS pipe, to draw upperWhen PMOS pipe need to be opened, provide this charging and discharging currents so that on draw PMOS pipe gate source voltage withPredetermined speed rises to supply voltage. Here on, drawing metal-oxide-semiconductor is PMOS pipe, therefore, opens at needsTime, in fact dynamic current generation module 1302 provides discharge current, thereby makes to draw PMOS pipeGate terminal drop to 0 from VCC, the absolute value of grid-source pressure reduction is VCC.

In order to control the break-make of charging and discharging currents IbiaD, can dynamic current generation module 1302 with on drawBetween PMOS pipe, being provided with pull-up current switching tube P1, is PMOS pipe here. Pull-up current switching tube P1Gate terminal be coupled to drive circuit 1301 with receive on draw control signal, thereby by draw control signalS_PCarry out gauge tap, and then control the break-make of IbiasD. For example,, at S_PFor low level is drawn PMOS with on openingGuan Shi, S_PFirst low level makes pull-up current switching tube P1 conducting, thereby makes dynamic current generation module1302 upwards draw PMOS pipe that charging and discharging currents (being specially discharge current) is provided so that on draw PMOSThe grid voltage of pipe reduces to 0 gradually from VCC, becomes and opens.

It should be noted that draw PMOS pipe on opening time, wish that its grid voltage falls gradually from VCCBe 0, draw PMOS pipe to open gradually. But, on turn-offing, draw PMOS when pipe, do not wish asThis, but turn-off, The faster the better. Therefore, this controlled voltage source module also can be designed with and draw reset switch pipeP2 is P pipe here.

On draw the source terminal of reset switch pipe P2 to be coupled to VCC, drain electrode end is coupled to and draws PMOS pipeGate terminal, gate terminal is coupled to drive circuit 1301 to draw the inversion signal of control signal on receiving, therebyMake to draw reset switch pipe P2 to there is conducting or the off state contrary with pull-up current switching tube P1.

Draw PMOS pipe on needs turn-off time, above draw control signal S_PBecome high level, pull-up current is openedClose pipe P1 be turned off, and on draw reset switch pipe P2 to be opened, thereby make to draw the grid of PMOS pipeExtremely directly be connected to supply voltage VCC, thereby draw PMOS pipe on turn-offing immediately.

Figure 14 show according to the utility model on the one hand for above drawing the dynamic driving electricity of NMOS pipeLu Tu. In the drawings, above draw metal-oxide-semiconductor to adopt NMOS pipe. As shown in the figure, above draw the leakage of NMOS pipeThe utmost point is coupled to VCC, and source electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to down simultaneouslyDraw one end in source terminal or the drain electrode end of the metal-oxide-semiconductor drain electrode end of NMOS pipe (in the figure for).

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1402. On drawBetween the gate terminal of NMOS pipe and source terminal, there is charge and discharge capacitance C. This charge and discharge capacitance C can beNMOS manages primary source-grid parasitic capacitance, can be also extra additional electric capacity.

On draw the gate terminal of NMOS pipe to receive from drawing control signal on drive circuit 1301With controlIn system, draw the turn-on and turn-off of NMOS pipe. For example, whenDuring for high level, above draw the conducting of NMOS pipe.

Especially, dynamic current generation module 1402 is in order to dynamically to generate the charging and discharging currents of size variation.The output of dynamic current generation module 1402 is coupled to the gate terminal of drawing NMOS pipe, to draw upperWhen NMOS pipe need to be opened, provide this charging and discharging currents so that on draw NMOS pipe gate source voltage withPredetermined speed rises to supply voltage. Here on, drawing metal-oxide-semiconductor is NMOS pipe, therefore, opens at needsTime, in fact dynamic current generation module 1402 provides charging current, thereby makes to draw NMOS pipeGate terminal be raised to VCC from 0, the absolute value of grid-source pressure reduction is VCC.

In order to control the break-make of charging and discharging currents IbiaD, can dynamic current generation module 1402 with on drawBetween NMOS pipe, being provided with pull-up current switching tube N1, is NMOS pipe here. Pull-up current switching tubeThe gate terminal of N1 is coupled to drive circuit 1401 and draws control signal on receivingThereby by draw controlSignalCarry out gauge tap, and then control the break-make of IbiasD. For example, existFor high level is with on openingWhile drawing NMOS pipe,First high level makes pull-up current switching tube N1 conducting, thereby makes dynamic electricStream generation module 1402 upwards draws NMOS pipe that charging and discharging currents (being specially charging current) is provided, so thatOn draw NMOS pipe grid voltage from 0 by being upgraded to VCC, become and open.

It should be noted that draw NMOS pipe on opening time, wish that its grid voltage is upgraded to gradually from 0VCC, draws NMOS pipe to open gradually. But, draw NMOS pipe on turn-offing time, do not wishSo, but turn-off The faster the better. Therefore, controlled voltage source module also can be designed with and draw reset switch pipeN2 is NMOS pipe here.

On draw the source terminal of reset switch pipe N2 to be coupled to circuit to hold, drain electrode end is coupled to and draws NMOSThe gate terminal of pipe, gate terminal is coupled to drive circuit 1401 to draw the inversion signal of control signal on receiving,Thereby make to draw reset switch pipe N2 to there is the conducting contrary with pull-up current switching tube N1 or turn-off shapeState.

Draw NMOS pipe on needs turn-off time, above draw control signalBecome low level, pull-up current is openedClose pipe N1 be turned off, and on draw reset switch pipe N2 to be opened, thereby make to draw the grid of NMOS pipeExtremely directly be connected to circuit and hold, thereby draw NMOS pipe on turn-offing immediately.

Figure 15 shows according to the utility model dynamic driving electricity for pull-down NMOS pipe on the one handLu Tu. In the drawings, drop-down metal-oxide-semiconductor adopts NMOS pipe. As shown in the figure, the source of pull-down NMOS pipeThe utmost point is coupled to circuit and holds, and drain electrode is coupled to the gate terminal of MOS switching tube (not shown), couples simultaneouslyOne end (being the drain electrode end of PMOS pipe in figure) in supreme source terminal or the drain electrode end that draws metal-oxide-semiconductor.

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1502. Drop-downBetween the gate terminal of NMOS pipe and source terminal, there is charge and discharge capacitance C. This charge and discharge capacitance C can beNMOS manages primary source-grid parasitic capacitance, can be also extra additional electric capacity.

The gate terminal of pull-down NMOS pipe receives from drawing control signal S on drive circuit 1501_NWith controlThe turn-on and turn-off of pull-down NMOS pipe processed. For example, work as S_NDuring for high level, pull-down NMOS pipe conducting.

Especially, dynamic current generation module 1502 is in order to dynamically to generate the charging and discharging currents of size variation.The output of dynamic current generation module 1502 is coupled to the gate terminal of pull-down NMOS pipe, with drop-downWhen NMOS pipe need to be opened, provide this charging and discharging currents so that the gate source voltage of pull-down NMOS pipe withPredetermined speed rises to supply voltage. The drop-down metal-oxide-semiconductor is here NMOS pipe, therefore, opens at needsTime, in fact dynamic current generation module 1502 provides charging current, thereby makes pull-down NMOS pipeGate terminal be raised to VCC from 0, the absolute value of grid-source pressure reduction is VCC.

In order to control the break-make of charging and discharging currents IbiaD, can be at dynamic current generation module 1502 with drop-downBetween NMOS pipe, being provided with pull-down current switching tube N1, is NMOS pipe here. Pull-down current switching tubeThe gate terminal of N1 is coupled to drive circuit 1501 to receive drop-down control signal, thereby believes by drop-down controlNumber S_NCarry out gauge tap, and then control the break-make of IbiasD. For example,, at S_NFor high level drop-down to openWhen NMOS pipe, S_NFirst high level makes pull-down current switching tube N1 conducting, thereby makes dynamic current rawBecoming module 1502 to pull down NMOS pipe provides charging and discharging currents (being specially charging current), so that drop-downThe grid voltage of NMOS pipe is upgraded to VCC gradually from 0, becomes and opens.

It should be noted that in the time opening pull-down NMOS pipe, wish that its grid voltage is upgraded to gradually from 0VCC, to open gradually pull-down NMOS pipe. But, in the time turn-offing pull-down NMOS pipe, do not wishSo, but turn-off The faster the better. Therefore, this controlled voltage source module also can be designed with drop-down reset switchPipe N2 is NMOS pipe here.

The source terminal of drop-down reset switch pipe N2 is coupled to circuit and holds, and drain electrode end is coupled to pull-down NMOSThe gate terminal of pipe, gate terminal is coupled to drive circuit 1501 to receive the inversion signal of drop-down control signal,Thereby make drop-down reset switch pipe N2 there is the conducting contrary with pull-down current switching tube N1 or turn-off shapeState.

In the time that needs turn-off pull-down NMOS pipe, drop-down control signal S_NBecome low level, pull-down current is openedClose pipe N1 and be turned off, and drop-down reset switch pipe N2 is opened, thereby make the grid of pull-down NMOS pipeExtremely directly be connected to circuit and hold, thereby turn-off pull-down NMOS pipe immediately.

The situation that is PMOS pipe due to drop-down metal-oxide-semiconductor is only used two power voltage supply in the situation that, andPrinciple is identical with the principle that is NMOS pipe, therefore, repeats no more.

Figure 16 shows the dynamic driver circuit figure according to an embodiment of the present utility model. Institute in Figure 16The difference of the dynamic driving scheme shown in dynamic driving scheme and the Figure 13 showing is to have added current mirror electricityRoad, the charging and discharging currents generating to transmit dynamic current generation module by current mirroring circuit.

As shown in figure 16, above draw metal-oxide-semiconductor to adopt PMOS pipe. On draw the source electrode of PMOS pipe to be coupled toVCC, drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to drop-down MOS simultaneouslyOne end (being the drain electrode end of NMOS pipe in figure) in source terminal or the drain electrode end of pipe. On draw PMOS pipeGate terminal and source terminal between there is charge and discharge capacitance C. This charge and discharge capacitance C can be PMOS pipePrimary source-grid parasitic capacitance can be also extra additional electric capacity.

With similar in Figure 13, in Figure 16, also comprise that dynamic current generation module 1602 discharges and recharges electricity to generateStream IbiasD, in addition, is also provided with pull-up circuit switching tube P1 in order to control the break-make of charging and discharging currents.In addition, in Figure 16, be also provided with and draw reset switch pipe P2.

In an embodiment, in Figure 16, be provided with pull-up current mirror circuit by dynamic current generation module1602 generate the supreme gate terminal of drawing PMOS pipe of current mirror, pull-up current mirror circuit can by drawCurrent switch pipe P1 controls break-make, and then providing of charging and discharging currents is provided.

In the embodiment shown in Figure 16, shown current mirroring circuit comprises two current lens unit. FirstCurrent lens unit is made up of PMOS pipe P3 and P4, and the second current lens unit is by NMOS pipe N1 and N2Form. The output of dynamic current generation module 1602 is coupled to the mirror image input of the first current lens unit,Be the drain electrode end of P3, the mirror image output of the first current lens unit is that the drain electrode end of P4 is opened via pull-up currentThe mirror image input that pass pipe P1 is coupled to the second current lens unit is the drain electrode end of N1, the second current lens unitMirror image output be that the drain electrode end of N2 is coupled to the gate terminal of drawing PMOS pipe.

First current lens unit here and the image ratio of the second current lens unit can equal 1, also can be largeIn 1 so that IbiasD is suitably amplified.

The gate terminal of pull-up current switching tube P1 is coupled to drive circuit 1601 and draws control signal on receiving,Thereby by draw control signal S_PCarry out gauge tap, and then control the break-make of mirror image circuit, i.e. IbiasDBreak-make. For example,, at S_PFor low level is to draw PMOS when pipe, S on opening_PFirst low level makes to drawCurrent switch pipe P1 conducting, now current mirroring circuit is unlocked, thereby makes dynamic current generation module 1602IbiasD be mirrored the gate terminal of the supreme PMOS of drawing pipe so that on draw PMOS pipe grid voltage fromVCC reduces to 0 gradually, becomes and opens. Owing to being discharge current here, so can think that dynamic current is rawThe circuit that becomes module 1602 to generate is negative current, as shown in the arrow in figure.

On draw reset switch pipe P2 to there is conducting or the off state contrary with pull-up current switching tube P1. ?While drawing PMOS pipe on needing to turn-off, above draw control signal S_PBecome high level, pull-up current switching tube P1Be turned off, and on draw reset switch pipe P2 to be opened, thereby make to draw the gate terminal of PMOS pipe directBe connected to supply voltage VCC, thereby draw PMOS pipe on turn-offing immediately.

Figure 17 shows the dynamic driver circuit figure according to an embodiment of the present utility model. Institute in Figure 17The difference of the dynamic driving scheme shown in dynamic driving scheme and the Figure 15 showing is to have added current mirror electricityRoad, the charging and discharging currents generating to transmit dynamic current generation module by current mirroring circuit.

As shown in figure 17, drop-down metal-oxide-semiconductor adopts NMOS pipe. The source electrode of pull-down NMOS pipe is coupled toCircuit ground end, drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to and draws simultaneouslyOne end (being the drain electrode end of PMOS pipe in figure) in source terminal or the drain electrode end of metal-oxide-semiconductor. Pull-down NMOSBetween the gate terminal of pipe and source terminal, there is charge and discharge capacitance C. This charge and discharge capacitance C can be NMOSManaging primary source-grid parasitic capacitance, can be also extra additional electric capacity.

With similar in Figure 15, in Figure 17, also comprise that dynamic current generation module 1702 discharges and recharges electricity to generateStream IbiasD, in addition, is also provided with pull-down circuit switching tube N1 in order to control the break-make of charging and discharging currents.In addition, in Figure 17, be also provided with drop-down reset switch pipe N2.

In an embodiment, in Figure 17, be provided with pull-down current mirror circuit by dynamic current generation module1702 current mirrors that generate are to the gate terminal of pull-down NMOS pipe, and pull-down current mirror circuit can be by drop-downCurrent switch pipe N1 controls break-make, and then providing of charging and discharging currents is provided.

In the embodiment shown in Figure 17, shown current mirroring circuit comprises two current lens unit. FirstCurrent lens unit is made up of NMOS pipe N3 and N4, and the second current lens unit is by PMOS pipe P1 and P2Form. The output of dynamic current generation module 1702 is coupled to the mirror image input of the first current lens unit,Be the drain electrode end of N3, the mirror image output of the first current lens unit is that the drain electrode end of N4 is via pull-down currentThe mirror image input that switching tube N1 is coupled to the second current lens unit is the drain electrode end of P1, the second current mirror listThe mirror image output of unit is the gate terminal that the drain electrode end of P2 is coupled to pull-down NMOS pipe.

The gate terminal of pull-down current switching tube N1 is coupled to drive circuit 1701 to receive drop-down control signal,Thereby by drop-down control signal S_NCarry out gauge tap, and then control the break-make of mirror image circuit, i.e. IbiasDBreak-make. For example,, at S_NFor high level is when opening pull-down NMOS pipe, S_NFirst high level makes drop-downCurrent switch pipe N1 conducting, now current mirroring circuit is unlocked, thereby makes dynamic current generation module 1702IbiasD be mirrored the gate terminal to pull-down NMOS pipe so that the grid voltage of pull-down NMOS pipe from0 is upgraded to VCC gradually, becomes and opens. Owing to being charging current here, so can think that dynamic current is rawThe circuit that becomes module 1702 to generate is positive current, as shown in the arrow in figure.

Drop-down reset switch pipe N2 has conducting or the off state contrary with pull-down current switching tube N1.In the time that needs turn-off pull-down NMOS pipe, drop-down control signal S_NBecome low level, pull-down current switching tubeN1 is turned off, and drop-down reset switch pipe N2 is opened, thereby makes the gate terminal of pull-down NMOS pipeDirectly be connected to circuit and hold, thereby turn-off pull-down NMOS pipe immediately.

Figure 18 shows the dynamic driver circuit figure according to an embodiment of the present utility model. In Figure 18,To on draw metal-oxide-semiconductor and drop-down metal-oxide-semiconductor all to use dynamic driving technology of the present utility model. For upperDraw the scheme of PMOS pipe dynamic driving to be described in Figure 16, draw metal-oxide-semiconductor on hereAlthough be NMOS pipe, principle is identical with Figure 16, therefore repeats no more.

For pull-down NMOS pipe, its dynamic driving and Figure 17 are roughly the same, and difference is only controlled voltageSource module has comprised that again a supplemental current generation module is for having introduced a supplemental current, with under openingWhile drawing NMOS pipe to close MOS switching tube M1 (not shown), accelerate closing process.

Get back to Figure 11, in the process of turn-offing at MOS switching tube M1, the time period that VDS changes is t7-t8,Vd/vt is slower during this period of time, and EMI is less. But within the t6-t7 time period, VDS is 0, EMIProblem is lighter, now wishes turn-off speed faster, therefore, if can accelerate in section at this momentThe pace of change of Rds_NMOS can shorten the turn-off time, can not affect EMI performance simultaneously.

For this reason, controlled voltage source module can be controlled by supplemental current switching tube the break-make of supplemental current, shouldThe output of supplemental current generation module is coupled to the grid of pull-down NMOS pipe via this supplemental current switching tubeExtremely, this supplemental current switching tube is worked as the grid of MOS switching tube in the opening process of pull-down NMOS pipeWhen voltage change, conducting provides supplemental current with the gate terminal that pulls down NMOS pipe, to accelerate pull-down NMOSThe variation of the gate source voltage of pipe.

This supplemental current generation module comprises mirror image circuit, for charging and discharging that dynamic current generation module is generatedElectricity current mirror to the gate terminal of pull-down NMOS pipe so that this supplemental current to be provided. For example,, according to Figure 18'sEmbodiment, the second current lens unit is also provided with PMOS pipe P23 and forms arranged side by side together with P21, P22Mirror-image structure. The drain electrode that is P22 except the first mirror as the second current lens unit as output pulls downThe gate terminal of NMOS pipe provides outside mirror image IbiasD electric current, and the drain electrode of P23 is as the second current lens unitThe second mirror image output be coupled to drop-down by supplemental current switching tube (be NMOS pipe N25) hereThe gate terminal of NOMS pipe.

Under this configuration, in the time that the gate terminal voltage of pull-down NMOS pipe is lower, the output of not gate I1For height, open supplemental current switching tube N25, increase extraly by a road charging current by P23, drop-downThe controlled voltage source of the gate terminal of NMOS pipe changes very fast. When the grid voltage of pull-down NMOS pipe higher thanAfter threshold voltage vth, not gate I1 is output as low, closes this supplementary charging current.

Figure 19 shows the effect of this supplemental current. As shown in figure 19, in the t6-t7 time period, Rds_NMOSBe divided into two stages, at first decrease speed is faster the stage, and supplemental current switching tube is opened and carried just during this period of timeFor the period of supplemental current, after closing, supplemental current declines with slightly slow speed again.

Figure 20 shows the dynamic driver circuit figure according to an embodiment of the present utility model. Figure 20 and figure18 difference is, controls the break-make of supplemental current switching tube N25 in Figure 18 by not gate I1. But,This mode inaccuracy, as shown in figure 19, within the t6-t7 time period, only have for the previous period and be to provideSupplemental current, but be within the whole t6-t7 time period, all to provide supplemental current with pick up speed ideally,And after the t7 moment, stop at once supplemental current.

For this reason, the gate terminal of supplemental current switching tube is designed to receive the grid of direct and MOS switching tubeThe supplemental current switching signal that voltage is associated, so that the grid voltage of proper MOS switching tube slowly changesTime, supplemental current switching signal control supplemental current switching tube N25 turn-offs to block supplemental current, and works asWhen the grid voltage of MOS switching tube is constant, supplemental current switching signal control supplemental current switching tube N25Conducting is to open supplemental current.

In Figure 20, adopt turn off analysis circuit 2003 to analyze the grid voltage of MOS switching tube M1. AsShown in Figure 20, the input of turn off analysis electric current 2003 is coupled to the gate terminal of MOS switching tube M1,To detect grid voltage, output is coupled to the gate terminal of supplemental current switching tube N25, so that above-mentioned benefit to be providedCharging stream switching signal.

In the example shown in Figure 20, this turn off analysis circuit 2003 can comprise comparator C OM, this ratioBe coupled to the gate terminal of MOS switching tube M1 compared with the first input end of device, the second input is via resistance R 2Be coupled to the gate terminal of MOS switching tube M1, simultaneously via capacitor C 3 ground connection, output is coupled to supplementaryThe gate terminal of current switch pipe N25.

The signal of the second input input of comparator C OM is actually prolonging of first input end input signalSlow version, whether the grid voltage that draws MOS switching tube M1 by relatively can analyzing of the twoIn slow variation.

Due in Miller platform phase, GATE (grid) voltage is substantially constant. By comparator C OMAnd resistance R 2 and C3, at the comparator upset output high level of vertiginous time, open benefit is providedThe supplemental current switching tube N25 of charging stream, in the substantially constant stage, comparator upset output low level,Turn-off again N25, thereby reduced the whole turn-off time, increase the Miller platform time simultaneously.

Figure 21 shows the effect of this supplemental current. As shown in figure 21, Rds_NMOS is at t6-t7 and t8-t9Due to supplemental current being provided, therefore there is resistance variations faster than the t7-t8 time period in time periodSpeed, has reduced turn-off delay, simultaneously due to before this period appears at the moment t7 that VDS changesAfter t8, therefore can not affect EMI performance.

Figure 20 also shows the embodiment of dynamic current generation module 2002. In Figure 20, dynamic currentThe current mirror electricity that generation module 2002 can comprise error amplifier EA and be made up of PMOS pipe P31, P32Road. The first input end of this error amplifier EA receives COMP voltage, and the second input is coupled to that it is defeatedGo out end, output is again by resistance R 1 ground connection in addition. Known according to the knowledge of error amplifier EA, mistakeThe voltage of the output of poor amplifier EA equal COMP voltage, thereby defeated at the mirror image of current mirroring circuitEnter end and obtain the electric current of COMP/R1, this electric current is via the mirror image of current mirroring circuit, from current mirroring circuitMirror image output is the drain electrode output of P32, to obtain IbiasD.

As previously mentioned, IbiasD should be inversely proportional to circuit load here, and load is heavier, IbiasLess, for example the loop compensation voltage COMP of circuit is just in time inversely proportional to load here, therefore, as long asIbiasD is designed to be directly proportional to COMP voltage. Generating IbiasD with COMP voltage is only oneIndividual example, also can generate IbiasD according to any index that can reflected load, and for example IbiasD electric current canBeing the image current of line loss electric current, can, with being and the proportional electric current of VCC, can be also also to account for demagnetizationEmpty ratio, ON time, proportional electric current of cycle. Figure 22 shows dynamic current and load frequency relationSchematic diagram.

The utility model has also been introduced a kind of for driving the driving method of dynamic adjustments device of signal in addition.This driving signal is for the switch of driven MOS switching tube. This dynamic adjustments device comprises: above draw MOSPipe, gate terminal receive for control its conducting or shutoff on draw control signal, in source terminal and drain electrode endOne end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of this MOS switching tube; And drop-downMetal-oxide-semiconductor, gate terminal receives drop-down control signal, source terminal and the drain electrode for controlling its conducting or shutoffOne end in end is coupled to circuit and holds, and the other end is coupled to the gate terminal of this MOS switching tube.

When this driving method is included in this drop-down metal-oxide-semiconductor by this drop-down control signal unlatching, drop-down to thisThe gate terminal of metal-oxide-semiconductor controlled voltage is provided so that the gate source voltage of this drop-down metal-oxide-semiconductor with dynamically adjustableSpeed rises to supply voltage, thereby drives the shutoff of this MOS switching tube with variable driving force.

In the time that loading condition is heavier, the controlled voltage providing to the gate terminal of this drop-down metal-oxide-semiconductor changes more slow,Rise to the speed of supply voltage with the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thereby reduce driving force, andWhen loading condition is lighter, the controlled voltage providing to the gate terminal of this drop-down metal-oxide-semiconductor changes faster, to addThe gate source voltage of fast this drop-down metal-oxide-semiconductor rises to the speed of supply voltage, thereby improves driving force.

Between the gate terminal of this drop-down metal-oxide-semiconductor and source terminal, be provided with drop-down charge and discharge capacitance, can be based on thisThe loading condition of MOS switching tube dynamically generates the charging and discharging currents of size variation, with at this drop-down MOSWhen pipe is opened, by the discharging and recharging of this drop-down charge and discharge capacitance, provide to the grid of this drop-down metal-oxide-semiconductorControlled voltage.

Under heavier loading condition, generate less charging and discharging currents, with the grid of this drop-down metal-oxide-semiconductor that slows down-source voltage rises to the speed of supply voltage, and under lighter loading condition, generates larger charging and discharging currents,Rise to the speed of supply voltage to accelerate the gate source voltage of drop-down metal-oxide-semiconductor.

The method is also included in the grid electricity when this MOS switching tube in the opening process of this drop-down metal-oxide-semiconductorPress while variation and provide supplemental current to the gate terminal of this drop-down metal-oxide-semiconductor, to accelerate this drop-down metal-oxide-semiconductorThe variation of gate source voltage.

The method is also included in while drawing metal-oxide-semiconductor to be drawn control signal to open on this on this, to drawing MOS on thisThe gate terminal of pipe provides controlled voltage so that draw the gate source voltage of metal-oxide-semiconductor with dynamic adjustable speed liter on thisTo supply voltage, thereby drive the unlatching of this MOS switching tube with variable driving force.

In the time that loading condition is heavier, change to the controlled voltage of drawing on this gate terminal of metal-oxide-semiconductor to provide more slow,To draw the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage on slowing down, thereby reduce driving force, andWhen loading condition is lighter, change to the controlled voltage of drawing on this gate terminal of metal-oxide-semiconductor to provide faster, to addOn this, draw soon the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage, thereby improve driving force.

On this, draw between the gate terminal of metal-oxide-semiconductor and source terminal and be provided with and draw charge and discharge capacitance, can be based on thisThe loading condition of MOS switching tube dynamically generates the charging and discharging currents of size variation, with to draw on thisWhen metal-oxide-semiconductor is opened, by drawing discharging and recharging of charge and discharge capacitance on this, to the grid that draws metal-oxide-semiconductor on thisControlled voltage is provided.

Under heavier loading condition, generate less charging and discharging currents, draw the grid of metal-oxide-semiconductor to slow down on this-source voltage rises to the speed of supply voltage, and under lighter loading condition, generates larger charging and discharging currents,On accelerating, draw the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage.

Providing previous description of the present disclosure is for any person skilled in the art all can be made or makeUse the disclosure. To be all apparent for a person skilled in the art to various amendments of the present disclosure, andGeneric principles as defined herein can be applied to other variants and can not depart from spirit of the present disclosure or modelEnclose. Thus, the disclosure is not intended to be defined to example described herein and design, but should be awardedGive the widest scope consistent with principle disclosed herein and novel features.

Claims

1. for driving a dynamic adjustments device for signal, described driving signal is opened for driven MOSThe switch that closes pipe, is characterized in that, described dynamic adjustments device comprises:

On draw metal-oxide-semiconductor, gate terminal receive for control its conducting or shutoff on draw control signal, source electrodeOne end in end and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the grid of described MOS switching tubeExtremely,

Drop-down metal-oxide-semiconductor, gate terminal receives the drop-down control signal for controlling its conducting or shutoff, source electrodeOne end in end and drain electrode end is coupled to circuit and holds, and the other end is coupled to the grid of described MOS switching tubeEnd, and

Controlled voltage source module, at described drop-down metal-oxide-semiconductor in the time being opened by described drop-down control signal, toThe gate terminal of described drop-down metal-oxide-semiconductor controlled voltage is provided so that the gate source voltage of described drop-down metal-oxide-semiconductor withDynamically adjustable speed rises to supply voltage, thereby drives described MOS switching tube with variable driving forceShutoff.

2. dynamic adjustments device as claimed in claim 1, is characterized in that, loading condition is heavier,The controlled voltage that described controlled voltage source module provides to the gate terminal of described drop-down metal-oxide-semiconductor changes more slow,Rise to the speed of supply voltage with the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thereby reduce driving force, andLoading condition is lighter, and it is controlled that described controlled voltage source module provides to the gate terminal of described drop-down metal-oxide-semiconductorVoltage change is faster, rises to the speed of supply voltage to accelerate the gate source voltage of described drop-down metal-oxide-semiconductor, fromAnd raising driving force.

3. dynamic adjustments device as claimed in claim 1, is characterized in that, described controlled voltage source electricityRoad comprises:

Drop-down charge and discharge capacitance, is coupled between the gate terminal and source terminal of described drop-down metal-oxide-semiconductor; And

Dynamic current generation module, dynamically generates greatly for the loading condition based on described MOS switching tubeThe charging and discharging currents of little variation, the output of described dynamic current generation module is coupled to described drop-down MOSThe gate terminal of pipe, with in the time that described drop-down metal-oxide-semiconductor is opened, by filling described drop-down charge and discharge capacitanceElectric discharge, provides controlled voltage to the grid of described drop-down metal-oxide-semiconductor.

4. dynamic adjustments device as claimed in claim 3, is characterized in that, described dynamic current generatesModule generates less charging and discharging currents under heavier loading condition, with the described drop-down metal-oxide-semiconductor that slows downGate source voltage rises to the speed of supply voltage, and under lighter loading condition, generates the larger electricity that discharges and rechargesFlow, rise to the speed of supply voltage to accelerate the gate source voltage of drop-down metal-oxide-semiconductor.

5. dynamic adjustments device as claimed in claim 3, is characterized in that, described drop-down metal-oxide-semiconductorGate terminal and described dynamic current generation module between be provided with pull-down current switching tube and charge and discharge described in controllingElectricity electric current break-make, the gate terminal of described pull-down current switching tube is coupled to described drop-down control signal, withDescribed in described drop-down control signal control, when drop-down metal-oxide-semiconductor conducting, make the conducting of described pull-down current switching tubeProvide charging and discharging currents with the gate terminal to described drop-down metal-oxide-semiconductor.

6. dynamic adjustments device as claimed in claim 5, is characterized in that, described controlled voltage source electricityRoad also comprises drop-down reset switch pipe, one end coupling in source terminal and the drain electrode end of described drop-down reset switch pipeBe connected to the gate terminal of described drop-down MOS switching tube, the other end is PMOS pipe at described drop-down metal-oxide-semiconductorIn time, is coupled to power voltage terminal and is NMOS when pipe to be coupled to circuit to hold at described drop-down metal-oxide-semiconductor, instituteState drop-down reset switch pipe and there is conducting or the off state contrary with described pull-down current switching tube.

7. dynamic adjustments device as claimed in claim 5, is characterized in that, described pull-down current switchOne end in source terminal and the drain electrode end of pipe is coupled to the output of described dynamic current generation module, the other endBe coupled to the gate terminal of described drop-down metal-oxide-semiconductor.

8. dynamic adjustments device as claimed in claim 5, is characterized in that, described controlled voltage source electricityRoad also comprises pull-down current mirror circuit, and described dynamic current generation module is via described pull-down current mirror circuit couplingBe connected to the gate terminal of described drop-down metal-oxide-semiconductor, described pull-down current switching tube is coupled to described pull-down current mirrorCircuit is to control the break-make of described pull-down current mirror circuit.

9. dynamic adjustments device as claimed in claim 8, is characterized in that, described pull-down current mirror electricityRoad comprises:

The first current lens unit, it is raw that the mirror image input of described the first current lens unit couples described dynamic currentBecome the output of module; And

The second current lens unit, the mirror image input of described the second current lens unit is opened via described pull-down currentPass pipe is coupled to the mirror image output of described the first current lens unit, and the mirror image of described the second current lens unit is defeatedGo out the gate terminal that end is coupled to described drop-down metal-oxide-semiconductor.

10. dynamic adjustments device as claimed in claim 3, is characterized in that, described controlled voltage source electricityRoad also comprises:

Supplemental current generation module, for generating supplemental current;

Supplemental current switching tube, the output of described supplemental current generation module is via described supplemental current switchPipe is coupled to the gate terminal of described drop-down metal-oxide-semiconductor, and described supplemental current switching tube is at described drop-down MOSIn the opening process of pipe in the time that the grid voltage of described MOS switching tube changes conducting with to described drop-down MOSThe gate terminal of pipe provides supplemental current, to accelerate the variation of gate source voltage of described drop-down metal-oxide-semiconductor.

11. dynamic adjustments devices as claimed in claim 10, is characterized in that, described supplemental current is openedDescribed in Guan Guanhe, drop-down metal-oxide-semiconductor is all NMOS pipe, and the gate terminal of described supplemental current switching tube is via insteadPhase device is coupled to the gate terminal of described drop-down metal-oxide-semiconductor, to control the break-make of described supplemental current switching tube.

12. dynamic adjustments devices as claimed in claim 10, is characterized in that, also comprise:

Turn off analysis circuit, its input is coupled to the gate terminal of described MOS switching tube, described in detectingThe grid voltage of MOS switching tube, output is coupled to the gate terminal of described supplemental current switching tube, withWhen changing, the grid voltage of described MOS switching tube opens described supplemental current switching tube, and at described MOSWhen the grid voltage of switching tube is constant, turn-off described supplemental current switching tube.

13. dynamic adjustments devices as claimed in claim 12, is characterized in that, described turn off analysis electricityRoad comprises:

Comparator, the first input end of described comparator is coupled to the gate terminal of described MOS switching tube, theThe gate terminal that two inputs are coupled to described MOS switching tube via resistance, simultaneously via capacity earth, is exportedEnd is coupled to the gate terminal of described supplemental current switching tube.

14. dynamic adjustments devices as claimed in claim 10, is characterized in that, described supplemental current is rawBecome module to comprise:

Mirror image circuit, for described charging and discharging currents mirror image that described dynamic current generation module is generated to instituteState the gate terminal of drop-down metal-oxide-semiconductor so that described supplemental current to be provided.

15. dynamic adjustments devices as claimed in claim 1, is characterized in that, described controlled voltage source mouldPiece draws on described metal-oxide-semiconductor in the time being drawn control signal to open on described, to drawing metal-oxide-semiconductor on describedGate terminal provides controlled voltage so that draw the gate source voltage of metal-oxide-semiconductor to rise to dynamic adjustable speed on describedSupply voltage, thus drive the unlatching of described MOS switching tube with variable driving force.

16. dynamic adjustments devices as claimed in claim 15, is characterized in that, loading condition is heavier,Described controlled voltage source module draws the controlled voltage that the gate terminal of metal-oxide-semiconductor provides to change more on describedSlow, to draw the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage on slowing down, thereby reduce driving force,And loading condition is lighter, what described controlled voltage source module provided to the gate terminal of drawing metal-oxide-semiconductor on described is subject toControl voltage change is faster, to accelerate drawing on the described gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage,Thereby raising driving force.

17. dynamic adjustments devices as claimed in claim 15, is characterized in that described controlled voltage sourceCircuit comprises:

On draw charge and discharge capacitance, be coupled on described and draw between the gate terminal and source terminal of metal-oxide-semiconductor; And

Dynamic current generation module, dynamically generates greatly for the loading condition based on described MOS switching tubeThe charging and discharging currents of little variation, the output of described dynamic current generation module is coupled on described and draws MOSThe gate terminal of pipe, when drawing metal-oxide-semiconductor to open, by drawing filling of charge and discharge capacitance on described on describedElectric discharge draws the grid of metal-oxide-semiconductor that controlled voltage is provided on described.

18. dynamic adjustments devices as claimed in claim 17, is characterized in that, described dynamic current is rawBecome module under heavier loading condition, to generate less charging and discharging currents, draw metal-oxide-semiconductor to slow down on describedGate source voltage rise to the speed of supply voltage, and generate larger discharging and recharging under lighter loading conditionElectric current, to draw the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage on accelerating.

19. dynamic adjustments devices as claimed in claim 17, is characterized in that, draw MOS on describedBetween the gate terminal of pipe and described dynamic current generation module, be provided with pull-up current switching tube fills described in controllingThe break-make of discharge current, the gate terminal of described pull-up current switching tube is coupled on described and draws control signal, withDraw metal-oxide-semiconductor conducting on drawing described in control signal control on described time, described pull-up current switching tube is ledPassing on described draws the gate terminal of metal-oxide-semiconductor that charging and discharging currents is provided.

20. dynamic adjustments devices as claimed in claim 19, is characterized in that described controlled voltage sourceCircuit also comprises and draws reset switch pipe, draws the one end in source terminal and the drain electrode end of reset switch pipe on describedBe coupled to the gate terminal of drawing MOS switching tube on described, it is PMOS that the other end draws metal-oxide-semiconductor on describedWhen pipe, being coupled to power voltage terminal and on described, drawing metal-oxide-semiconductor is NMOS when pipe to be coupled to circuit to hold,On described, draw reset switch pipe to there is conducting or the off state contrary with described pull-up current switching tube.

21. dynamic adjustments devices as claimed in claim 19, is characterized in that, described pull-up current is openedOne end in source terminal and the drain electrode end of pass pipe is coupled to the output of described dynamic current generation module, anotherEnd is coupled to the gate terminal of drawing metal-oxide-semiconductor on described.

22. dynamic adjustments devices as claimed in claim 19, is characterized in that described controlled voltage sourceCircuit also comprises pull-up current mirror circuit, and described dynamic current generation module is via described pull-up current mirror circuitBe coupled to the gate terminal of drawing metal-oxide-semiconductor on described, described pull-up current switching tube is coupled to described pull-up currentMirror circuit is to control the break-make of described pull-up current mirror circuit.

23. dynamic adjustments devices as claimed in claim 22, is characterized in that, described pull-up current mirrorCircuit comprises:

The 3rd current lens unit, it is raw that the mirror image input of described the 3rd current lens unit couples described dynamic currentBecome the output of module; And

The 4th current lens unit, the mirror image input of described the 4th current lens unit is opened via described pull-up currentPass pipe is coupled to the mirror image output of described the 3rd current lens unit, and the mirror image of described the 4th current lens unit is defeatedGo out end and be coupled to the gate terminal of drawing metal-oxide-semiconductor on described.

24. dynamic adjustments devices as described in claim 3 or 17, is characterized in that described dynamic electricStream generation module comprises:

Error amplifier, one input end receives COMP voltage, and another input is coupled to its output,Output is by resistance eutral grounding, and wherein said COMP voltage and load weight condition are inversely proportional to; And

Current mirroring circuit, the input that the output of described error amplifier is coupled to described current mirroring circuit withExport described charging and discharging currents from described current mirroring circuit.

25. 1 kinds of drive systems, is characterized in that, comprising:

MOS switching tube;

As described in any one in claim 1-24 for driving the dynamic adjustments device of signal; And

Drive circuit, draws control signal and drop-down control signal for generating on described.