CN113385987A - 氮化铝晶圆片的制造方法及其氮化铝晶圆片 - Google Patents
氮化铝晶圆片的制造方法及其氮化铝晶圆片 Download PDFInfo
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- CN113385987A CN113385987A CN202010197138.0A CN202010197138A CN113385987A CN 113385987 A CN113385987 A CN 113385987A CN 202010197138 A CN202010197138 A CN 202010197138A CN 113385987 A CN113385987 A CN 113385987A
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- aluminum nitride
- wafer
- nitride wafer
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 166
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 238000000227 grinding Methods 0.000 claims description 34
- 238000005498 polishing Methods 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000005238 degreasing Methods 0.000 claims description 15
- 238000005245 sintering Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000006722 reduction reaction Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 8
- 239000003570 air Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000007790 scraping Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005262 decarbonization Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 103
- 238000005469 granulation Methods 0.000 description 15
- 230000003179 granulation Effects 0.000 description 15
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 8
- 239000002270 dispersing agent Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 235000019198 oils Nutrition 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- -1 acetic acid Chemical compound 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229920000084 Gum arabic Polymers 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 241000978776 Senegalia senegal Species 0.000 description 2
- 239000000205 acacia gum Substances 0.000 description 2
- 235000010489 acacia gum Nutrition 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- KNKRKFALVUDBJE-UHFFFAOYSA-N 1,2-dichloropropane Chemical compound CC(Cl)CCl KNKRKFALVUDBJE-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229940072056 alginate Drugs 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- DZGUJOWBVDZNNF-UHFFFAOYSA-N azanium;2-methylprop-2-enoate Chemical compound [NH4+].CC(=C)C([O-])=O DZGUJOWBVDZNNF-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 235000021323 fish oil Nutrition 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- AIRCTMFFNKZQPN-UHFFFAOYSA-N oxidoaluminium Chemical compound [Al]=O AIRCTMFFNKZQPN-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种氮化铝晶圆片的制造方法及氮化铝晶圆片,其中该制造方法包含于该氮化铝晶圆片材的外圆上形成至少一对位槽口或对位平边,该对位槽口及对位平边可使该氮化铝晶圆片在半导体制程过程中不会产生制程不良的状况,且具备精准对位功能,以提高优良率。本发明的氮化铝晶圆片具有高热传导率、高介电常数、绝缘性及散热佳等优点,适于应用在半导体制程程序、电子产品及半导体设备所需,并作为电子产品。
Description
技术领域
本发明涉及一种氮化铝晶圆片及其制造方法,特别指一种具有对位槽口(Notch)或对位平边或周围导角的氮化铝晶圆片,可用于半导体制程,其所制造的氮化铝晶圆片可用于半导体电子产品。
背景技术
一般晶圆片将硅拉制提炼、融解、纯化及蒸馏等程序后完成单晶硅棒,随将单晶硅棒经过加工后,即研磨及抛光等,获得晶圆片。晶圆片的加工方法种类包含化学加工、机械加工及化学机械加工。化学加工包含碱性或酸性蚀刻,机械加工包含研磨或抛光等,而化学机械加工将利用强酸或强碱在硅晶圆表面先腐蚀出一层薄而软的氧化层后,再进行机械抛光。
研磨目的为将晶圆片打磨将厚度控制在能接受的范围,而抛光则要改善研磨所造成的瑕疵,将晶圆表面平坦化、平整化及平面化,使晶圆片表面平滑,不易有微粒附着,因为晶圆片缺陷来源多为微粒、晶体原生的空坑、残余物或刮痕。
研磨过程为将晶圆块材先切割成晶圆片,常用的切割方式包还切割刀或线切割,随后再进行研磨,以达所需厚度。当晶圆片厚度太厚时,会造成散热不良,一般功率分离器中的晶圆片厚度约350-450μm,集成电路由于需要更薄的厚度,厚度一般为180μm以下。
发明内容
陶瓷具有高介电常数、绝缘性、高热传导率、耐热性及散热性佳的优点,特别在高湿度下具有稳定性能。经发明人研究调查,陶瓷材料中,多晶氮化铝尤具有高热传导率(约170-240W/mk),为氧化铝的7至9倍,且具有抗腐蚀性、耐高温、低膨胀系数、高介电常数及高机械强度等特性,即适于作为晶圆片的材料,效能可优于使用硅作为晶圆材料。从而,本发明欲提供一种氮化铝晶圆片的制造方法及其所制造的氮化铝晶圆片;本发明的氮化铝晶圆片除使用氮化铝为材料外,晶圆片上设置有对位槽口(Notch)或对位平边,可有效改善加工过程中对位不佳或晶圆片破裂或刮伤问题。
是以,本发明的目的为提供一种氮化铝晶圆片的制造方法,其包含步骤:(a)将一氮化铝生胚块材经高温处理为一氮化铝晶圆块材;(b)于该氮化铝晶圆块材的外圆上形成至少一对位槽口或一对位平边,切割该氮化铝晶圆块材为若干个氮化铝晶圆片材;及(c)将每一该氮化铝晶圆片材进行研磨抛光。
于较佳实施例中,该氮化铝生胚块材将氮化铝生胚设置于模具内,以机械或油压成型后,以水压、油压或气压进行均压处理所获得;其中,该机械或油压成型在压力吨数为98066.50N-9806650.00N及该模具内压力为-0.063atm-100atm所完成,该水压、油压或气压做进行均压处理在压力为100atm-8000atm及温度为10℃-100℃所完成。
本发明的另一目的为提供一种氮化铝晶圆片的制造方法,其包含下列步骤:(a)提供一氮化铝生胚片材,该氮化铝生胚片材可为将一氮化铝生胚以刮片涂覆形成所获得或将该氮化铝生胚以刮片涂覆形成一氮化铝生胚卷材后,裁切该氮化铝生胚卷材所获得;(b)将该氮化铝生胚片材经高温处理为一氮化铝晶圆片材;及(c)于该氮化铝晶圆片材的外圆上形成至少一对位槽口或一对位平边,及将该氮化铝晶圆片材进行研磨抛光。
于较佳实施例中,该高温处理包含一脱脂过程及一烧结过程;其中,该脱脂过程于200℃-900℃且有氢、氮、氧、氩或空气的环境下进行;该烧结过程于1000℃-3000℃及真空、常压或高压的压力下,且在有氢、氮、氩的环境下进行。
于较佳实施例中,该氮化铝生胚包含氮化铝颗粒;其中,该氮化铝颗粒将一氧化铝及/或一纯铝的粉体混合含氮、碳、氢原子的有机胶材进行混合后,在含有氢、氮、碳原子的气体环境下进行高温碳热还原反应后,在含有氮、氧或大气的气体气氛环境下进行高温除碳后造粒所获得。
于较佳实施例中,该高温碳热还原反应在温度600℃-3000℃所完成。
于较佳实施例中,该步骤(c)中,可于进行研磨抛光前或后,将该氮化铝晶圆片材的外圆(即周围)形成导角,其中该导角的形状包含直角型、半圆形、不对称半圆形、半椭圆形、不对称半椭圆形、对称梯形、不对称梯形、对称半圆形及梯形组合或不对称半圆形及梯形组合。
于较佳实施例中,该对位槽口的型状包含V形凹槽型,且该V形凹槽型的V形底部及左右上部为圆弧,以避免应力集中造成晶圆破裂。
于较佳实施例中,该对位平边经镭射、水刀或机械加工所形成。
本发明的另一目的为提供一种氮化铝晶圆片,其使用如上所述的制造方法所获得的氮化铝晶圆片;其中,该氮化铝晶圆片的外圆包含至少一对位槽口或一对位平边。
相较于现有技术,本发明的氮化铝晶圆片的制造方法可获得具有抗腐蚀性、耐高温、低膨胀系数、高介电常数及高机械强度的氮化铝晶圆片;本发明的氮化铝晶圆片具有对位槽口或对位平边,能改善对位不佳而导致切片时过度歪斜,研磨及抛光时无法获得平坦及平整的晶圆表面而有凹凸不明的表面,降低优良率等问题。
附图说明
图1为本发明的氮化铝晶圆片不具有导角的示意图。
图2为本发明的氮化铝晶圆片具有导角及V形凹槽型的对位槽口的示意图(该V形凹槽型的V形底部及左右上部为圆弧)。
图3(a)和(b)为本发明的氮化铝晶圆片形成对位槽口及导角的方法的示意图。
图4为本发明的氮化铝晶圆片的导角形状的示意图:(a)直角形;(b)半圆形;(c)不对称半圆形;(d)半椭圆形;(e)不对称半椭圆形;(f)对称梯形;(g)不对称梯形;(h)对称梯形及半圆组合形;(i)不对称梯形及半圆组合形。
图5为本发明的氮化铝晶圆片具有对位平边的示意图。
附图标记说明:
1 氮化铝晶圆片
2 对位槽口
3 导角
4 对位平边
6 研磨导角用的砂轮
7 研磨对位槽口用的砂轮
具体实施方式
下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能解释为对本发明的限制。
本发明的第一实施例的氮化铝晶圆片的制造方法包含步骤:(a)将一氮化铝生胚块材经高温处理为一氮化铝晶圆块材;(b)于该氮化铝晶圆块材的外圆上形成至少一对位槽口或一对位平边,切割该氮化铝晶圆块材为若干个氮化铝晶圆片材;及(c)将每一该氮化铝晶圆片材进行研磨抛光。
本发明的第一实施例中,所述的“氮化铝生胚块材”将氮化铝生胚设置于模具内,以机械或油压成型后,以水压、油压或气压进行均压处理所获得,且该均压处理以等向为佳。其中,氮化铝生胚设置于模具内并于真空、常压或高压下以机械或油压成型的过程,可使完成后的氮化铝晶圆片的孔洞减少,并降低晶圆片表面受到粒子沾附;水压、油压或气压进行均压处理的过程,可使压缩后的氮化铝生胚密度一致,获得均质氮化铝生胚。该氮化铝生胚设置于模具内,该机械或油压进行成型在压为98066.50N-9806650.00N(即10吨-1000吨)所完成,例如98066.50N、4900332.50N、980665.00N、1961330.00N、2941995.00N、3922660.00N、4903325.00N、5883990.00N、6864655.00N、7845320.00N、8825985.00N或9806650.00N,且本发明不限于此等,而模具内的压力可为真空、常压或高压,压力范围为-0.063atm-100atm,例如-0.063atm、1atm、5atm、10atm、20atm、30atm、40atm、50atm、60atm、70atm、80atm、90atm或100atm,且本发明不限于此等。该水压、油压或气压进行均压处理在压力为100atm-8000atm及温度为10℃-100℃所完成,该压力可例如100atm、200atm、300atm、400atm、500atm、600atm、700atm、800atm、900atm、1000atm、1500atm、2000atm、2500atm、3000atm、3500atm、4000atm、4500atm、5000atm、5500atm、6000atm、6500atm、7000atm、7500或8000atm等,且本发明不限于此等,该温度可例如10℃、20℃、30℃、40℃、50℃、60℃、70℃、80℃、90℃或100℃,且本发明不限于此等。
本发明的第一实施例中,该步骤(b)中,切割该氮化铝晶圆块材为若干个氮化铝晶圆片材的过程可使用通用的晶圆块切割方法,其包含刀切或线切割,具体例如钻石刀进行刀切、钢琴线进行线切割,且本发明并不用限于此等。
本发明的第二实施例的氮化铝晶圆片的制造方法包含步骤,其包含下列步骤:(a)提供一氮化铝生胚片材,该氮化铝生胚片材可为将一氮化铝生胚以刮片涂覆形成所获得或将该氮化铝生胚以刮片涂覆形成一氮化铝生胚卷材后,裁切该氮化铝生胚卷材所获得;(b)将该氮化铝生胚片材经高温处理为一氮化铝晶圆片材;及(c)于于该氮化铝晶圆片材的外圆上形成至少一对位槽口或一对位平边,及将该氮化铝晶圆片材进行研磨抛光。
本发明中,所述的“氮化铝生胚”将氮化铝颗粒及结合树脂及/或分散剂混合所获得。较佳地,该氮化铝生胚更可视需要地添加其他添加剂,例如塑化剂,且本发明并不限于此,塑化剂可使该氮化铝晶圆片具有挠屈性。
本发明中,所述的“结合树脂”包含聚乙烯醇缩丁醛(PVB)、聚乙烯醇(PVA)、聚乙二醇、乙基纤维素、聚丙酮、低烷基丙烯酸酯共聚物、甲基丙烯酸酯任一者或其等的组合,而该结合树脂的添加量占该氮化铝生胚的重量百分比为0.1wt%-10wt%,例如0.1wt%、1wt%、3wt%、5wt%、7wt%或10wt%,且本发明并不限于此等。
本发明中,所述的“分散剂”可为有机溶剂,其包含醇类、酮类、酯类、羧酸类或烃类等,具体例如:甲醇、乙醇(95%)、正丁醇、戊醇、甲苯乙醇(95%)、双丙酮醇等的醇类;丙酮、甲基乙基酮、戊酮、甲基异丁酮、环己酮等的酮类,醋酸甲酯、乙酸乙酯(85%)、乙酸丁酯、醋酸异戊酯、磷酸三丁酯等的酯类,醋酸等的羧酸类,四氯化碳、二氯丙烷等的为卤素取代的烃类;甲苯、1,4-二氧陆圜、及甲基溶纤剂、乙基溶纤剂任一者或其等的组合,且本发明并不限于此等。
本发明中,所述的“氮化铝颗粒”将一氧化铝及/或一纯铝的粉体混合含氮、碳、氢原子的有机胶材进行混合后,于真空、常压或高压及含有氮、碳。其中碳源可为固体与气体或原子、氢原子的气体环境下进行高温碳热还原反应后,于氮、氧或大气的气体气氛环境下进行高温除碳后所获得,随后进行造粒所获得。所述的“高温碳热还原反应”将氧化铝或铝的氧原子与碳原子形成一氧化碳或二氧化碳,其氧原子空位与氮原子互换或置入氮原子,形成氮化铝;其中,该高温碳热还原反应在含有氢、氮、碳气体气氛环境,压力为-0.063atm-6000atm及温度为600℃-3000℃下所完成,该压力包含-0.063atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm或6000atm,且本发明不限于此等;该温度包含600℃、700℃、800℃、900℃、1000℃、1100℃、1200℃、1600℃、2000℃、2100℃、2200℃、2300℃、2400℃、2500℃、2600℃、2700℃、2800℃、2900℃或3000℃,且本发明不限于此等。所述的“高温除碳后”将该高温碳热还原反应中可能产生不必要的碳或碳化物除去,且温度为200℃-900℃下所完成,例如200℃、300℃、400℃、500℃、600℃、700℃、800℃或900℃,且本发明不限于此等。该氮化铝颗粒的粒径大小为10nm-200um,例如10nm、20nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm、100nm、150nm、200nm、250nm、300nm、350nm、400nm、450nm、500nm、550nm、600nm、650nm、700nm、750nm、800nm、850nm、900nm、1um、10um、20um、30um、40um、50um、60um、70um、80um、90um、100um、110um、120um、130um、140um、150um、160um、170um、180um、190um或200um,且本发明不限于此等。
上述的“造粒”过程可视需要地添加一助烧结剂及/或一黏结剂与分散剂。该造粒的方式包含粉体造粒、雾化造粒、喷雾造粒、搅拌滚动/混合造粒、压力成形造粒、烧结成型造粒等,以粉体造粒、雾化造粒及喷雾造粒为较佳,更以粉体造粒为最佳。其中,该助烧结剂包含氧化物或氮化物,该氧化物包含氧化镁、氧化锆、氧化钙、氧化铼、氧化钇、氧化硅、硼、碳任一者或其等的组合,该氮化物包含氮化铝、氮化硼任一者或其等的组合,且该助烧结剂中更可包含有铈、铕、铒、钕、铽、钐、铥、镝、钇、钆、镨、镥、钬、钷、镧、镱的金属,该助烧结剂占该氮化铝颗粒的重量为0wt%-20wt%之间,例如0wt%、0.5%、1wt%、1.5%或、2wt%、5wt%、10wt%、15wt%或20wt%,且本发明并不限于此等;该黏结剂包含聚乙烯醇缩丁醛(PVB)、聚乙二醇、***树胶、海藻酸胺、甲基纤维素、烯甲基纤维素、乙烯纤维素、烃乙基纤维素、甲基丙烯酸胺、亚甲基双丙烯酰胺、聚氧乙烯任一者或其等的组合,该黏结剂占该氮化铝颗粒的重量为0.1wt%-20wt%之间,例如0.1wt%、1wt%、3wt%、5wt%、7wt%、10wt%、15wt%或20wt%,且本发明并不限于此等;该分散剂包含聚丙烯酸、聚丙烯、聚丙烯胺、聚乙烯、聚乙二烯、聚乙二醇、***树胶、明胶、鱼油、飞鱼油、油酸、蓖麻油任一者或其等组合,该分散剂占该氮化铝颗粒的重量为0.1wt%-20wt%之间,例如0.1wt%、1wt%、2wt%、3wt%、4wt%、5wt%、10wt%、15wt%或20wt%等,且本发明并不限于此等。
本发明中,所述的“含氮、碳、氢原子的有机胶材”包含酚醛树脂、聚丙烯腈、ABS树脂、丁苯橡胶或碳粉任一者或其等的组合,且以酚醛树脂为佳。
本发明中,所述的“高温处理”包含一脱脂过程及一烧结过程。所述的“脱脂过程”通过加热及其它物理方法将该氮化铝生胚内的有机物排除,可采用传统的热脱脂、溶剂脱脂、催化脱脂以及水基萃取脱脂,较佳为采用热脱脂,其温度为200℃-900℃,例如200℃、250℃、300℃、350℃、400℃、450℃、500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃或900℃等,且在有氢、氮、氧、氩或空气的环境下进行,此脱脂步骤可将该氮化铝颗粒中的黏结剂去除。所述的“烧结过程”于高温及真空、常压或高压的压力下进行的烧结处理过程,且在有氢、氮、氩的环境下进行;其中,该高温为1000℃-3000℃,具体例如1000℃、1200℃、1500℃、2000℃、2500℃或3000℃,且本发明不限于此等;该真空、常压或高压的压力为环境为-0.063atm-6000atm,具体例如-0.063atm、0atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm或6000atm,且本发明不限于此等。
本发明中,该步骤(c)中,可于进行研磨抛光前或后,将该氮化铝晶圆片材周围形成导角。图1为本发明的氮化铝晶圆片不具有导角的示意图,图2本发明的氮化铝晶圆片具有导角的示意图。
本发明中,所述的“导角”于该氮化铝晶圆片材的周围形成特定形状,该导角可由通用的边缘研磨机或机械加工机(CNC)所完成,具体例如可形成特定形状的砂轮,如图3(a)及(b)所示:该氮化铝晶圆片材可经由研磨导角用的砂轮6进行研磨,以获得半圆形导角2。如图4(a)至(i)所示,该导角的形状包含:(a)直角形;(b)半圆形;(c)不对称半圆形;(d)半椭圆形;(e)不对称半椭圆形;(f)对称梯形;(g)不对称梯形;(h)对称梯形及半圆组合形;(i)不对称梯形及半圆组合形,且本发明并不限于此等。导角可防止晶圆片于制程中有应力集中的问题及毛边,并防止晶圆片的周围崩裂,及利于后续制程中设置光阻层或磊晶层的平坦度,使光阻层或磊晶层可表面均匀分布,但特殊制程亦可不做导角处理。
本发明中,所述的“对位槽口或对位平边”将该氮化铝晶圆片材外援设置至少一特定状的记号;如图2所示,该对位槽口可为V形凹槽型,该V形凹槽尖角处可做圆弧化,即该V形凹槽型的V形底部及左右上部为圆弧,以避免应力集中造成晶圆破裂;如图5所示,该对位平边为平面边型。其中,该对位槽口可使用砂轮所完成,如图3(a)及(b)所示,使用研磨对位槽口用的砂轮7于该氮化铝晶圆片的外圆形成一对位槽口2;该对位平边可为通用切割晶圆片外圆的切割器所完成,其方式包含镭射、水刀或机械加工所形成,且本发明不限于此等。该对位槽口或对位平边可使该氮化铝晶圆片在制程中,对准位置更为精准,提升优良率。
本发明中,所述的“研磨”可为干式或湿式研磨、以及单向或双向研磨。若为单向研磨之时,可将该氮化铝晶圆片背贴UV胶、热熔胶或涂布胶材,以增加其均匀性。
本发明中,所述的“抛光”可为干式或湿式、以及单面抛光或双面抛光。
本发明的氮化铝晶圆片具有热传导系数为100W/mk-250W/mk,故容易散热且不因热而膨胀,具体例如100W/mk、110W/mk、120W/mk、130W/mk、140W/mk、150W/mk、160W/mk、170W/mk、180W/mk、190W/mk、200W/mk、210W/mk、220W/mk、230W/mk、240W/mk或250W/mk;介电常数为8-9(1MHz),故具有绝缘的效果,具体例如8(1MHz)、8.1(1MHz)、8.2(1MHz)、8.3(1MHz)、8.4(1MHz)、8.5(1MHz)、8.6(1MHz)、8.7(1MHz)、8.8(1MHz)、8.9(1MHz)或9(1MHz);弯取强度为200-600MPa,具体例如200MPa、250MPa、300MPa、350MPa、400MPa、450MPa、500MPa、550MPa或600MPa,故高机械强度。
本发明的氮化铝晶圆片的制造方法所得的氮化铝晶圆片可为18吋、12吋、10吋、8吋、6吋、4.5吋、4吋、2吋,或其他加工可制造能力范围的圆形,具有绝缘、散热、介电系数高的优势,低经过后端半导体加工程序,光罩、蚀刻、封装、及测试后,便可用于电子产业或半导体产业,诸如三维电路封装、功率半导体组件封装、电路制造等。
[具体实施例]
本发明以下叙述为此技术领域中通常知识者可轻易明了此发明的必要技术,且只要不违反其中的精神及范围,就可以多样的改变及修饰这个发明来适应不同的用途及状况。如此,其他的实施例亦包含于申请专利范围中。
制备例1-制备氮化铝颗粒
将1kg氧化铝、1kg纯铝粉体及酚醛树酯经球磨混合酚醛树酯与碳粉造粒后,将粒子移置高温炉于1atm及1600℃并通入乙炔、氮气、氢气进行高温碳热还原反应20小时,将还原后的粒子置于大气环境下,以600℃24小时进行高温除碳后,使用大川原喷雾造粒机进行造粒得到粒径为60-90um大小的氮化铝颗粒1.1kg。
实施例1-氮化铝晶圆片的制造方法1
将上述制备例1所得的3kg氮化铝颗粒混合加入10%聚乙烯醇缩丁醛(PVB)树脂、1%分散剂获得氮化铝生胚后,将该氮化铝生胚设置于油压机模具内,于真空下以压力1961330N及模内压力-0.063atm做高压成型,并使用EPSI的水压机以3000atm压力等向压力及30℃下做等压均压处理,形成氮化铝生胚块材;将该氮化铝生胚块材移置大气下600℃下脱脂进行后,经由岛津高温炉进行烧结于10atm及温度为1800℃做烧结处理,形成氮化铝晶圆块材;将该氮化铝晶圆块材移置砂轮研磨机切割出一对位槽口后,使用多线切割为8吋氮化铝晶圆片材,并经双向研磨机台进行湿式将双面研磨平面再经单向减薄机减薄至所需尺寸,且以对应的具形状成型的砂轮研磨,使形成周围为半圆形导角后,使用单向抛光机台干式双面抛光,获得氮化铝晶圆片。
实施例2-氮化铝晶圆片的制造方法2
将上述制备例1所得的3kg氮化铝颗粒混合加入10%聚乙烯醇缩丁醛(PVB)树脂、1%分散剂获得氮化铝生胚后,以刮刀涂覆形成氮化铝生胚片材,并以10分钟60℃10分钟干燥;将该氮化铝生胚片材移置大气下600℃下脱脂进行后,经由岛津高温炉进行烧结于10atm及温度为1800℃做烧结处理,形成氮化铝晶圆片材;将该氮化铝晶圆片材移置镭射机台下,在外圆上形成一对位槽口,做出一对位槽口后,经镭射切割为8吋圆形芯片薄板,并经双向研磨机台进行湿式将双面研磨平面再经单向减薄机减薄至所需尺寸,且以对应的具形状成型的砂轮研磨,使形成周围呈半圆形导角后,使用单向抛光机台干式双面抛光,获得氮化铝晶圆片。
测试例.
性能测试
将实施例1及2制造的氮化铝晶圆片、比较例1硅晶圆片、比较例2氧化铝晶圆片及比较例3玻璃晶圆片进行性能测试,测试项目包含热传导、弯曲强度及介电常数。
测试结果别如表一所示:相较于其他材质的硅晶圆片,实施例1及2氮化铝晶圆片具有高热传导较高、高弯曲强度及高介电常数,故具有良好的性能。
表一
综上,本发明的氮化铝晶圆片的制造方法可获得具有抗腐蚀性、耐高温、低膨胀系数、高介电常数及高机械强度的氮化铝晶圆片;本发明的氮化铝晶圆片具有对位槽口或对位平边,能改善对位不佳而导致切片时过度歪斜,研磨及抛光时无法获得平坦及平整的晶圆表面而有凹凸不明的表面,降低优良率等问题。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果,以上所述仅为本发明的较佳实施例,但本发明不以图面所示限定实施范围,凡是依照本发明的构想所作的改变,或修改为等同变化的等效实施例,仍未超出说明书与图示所涵盖的精神时,均应在本发明的保护范围内。
Claims (10)
1.一种氮化铝晶圆片的制造方法,其特征在于,包含下列步骤:
(a)将一氮化铝生胚块材经高温处理为一氮化铝晶圆块材;
(b)于该氮化铝晶圆块材的外圆上形成至少一对位槽口或一对位平边,切割该氮化铝晶圆块材为若干个氮化铝晶圆片材;及
(c)将每一该氮化铝晶圆片材进行研磨抛光。
2.如权利要求1所述的制造方法,其特征在于,该氮化铝生胚块材将氮化铝生胚设置于模具内,以机械或油压成型后,以水压、油压或气压进行均压处理所获得;其中,该机械或油压成型在压力吨数为98066.50N-9806650.00N及该模具内压力为-0.063atm-100atm所完成,该水压、油压或气压做进行均压处理在压力为100atm-8000atm及温度为10℃-100℃所完成。
3.一种氮化铝晶圆片的制造方法,其特征在于,包含下列步骤:
(a)提供一氮化铝生胚片材,该氮化铝生胚片材为将一氮化铝生胚以刮片涂覆形成所获得或将该氮化铝生胚以刮片涂覆形成一氮化铝生胚卷材后,裁切该氮化铝生胚卷材所获得;
(b)将该氮化铝生胚片材经高温处理为一氮化铝晶圆片材;及
(c)于该氮化铝晶圆片材的外圆上形成至少一对位槽口或一对位平边,及将该氮化铝晶圆片材进行研磨抛光。
4.如权利要求1或3所述的制造方法,其特征在于,该高温处理包含一脱脂过程及一烧结过程;其中,该脱脂过程于200℃-900℃且有氢、氮、氧、氩或空气的环境下进行;该烧结过程于1000℃-3000℃及真空、常压或高压的压力下,且有氢、氮、氩的环境下进行。
5.如权利要求2或3所述的制造方法,其特征在于,该氮化铝生胚包含氮化铝颗粒;其中,该氮化铝颗粒将一氧化铝及/或一纯铝的粉体混合含氮、碳、氢原子的有机胶材进行混合后,在含有氢、氮、碳原子的气体环境下进行高温碳热还原反应后,在含有氮、氧或大气的气体气氛环境下进行高温除碳后造粒所获得。
6.如权利要求5所述的制造方法,其特征在于,该高温碳热还原反应在温度600℃-3000℃所完成。
7.如权利要求1或3所述的制造方法,其特征在于,该步骤(c)中,可于进行研磨抛光前或后,将该氮化铝晶圆片材周围形成导角,其中该导角的形状包含直角型、半圆形、不对称半圆形、半椭圆形、不对称半椭圆形、对称梯形、不对称梯形、对称半圆形及梯形组合或不对称半圆形及梯形组合。
8.如权利要求1或3所述的制造方法,其特征在于,该对位槽口的型状包含V形凹槽型,且该V形凹槽型的V形底部及左右上部为圆弧。
9.如权利要求1或3所述的制造方法,其特征在于,该对位平边经镭射、水刀或机械加工所形成。
10.一种氮化铝晶圆片,其特征在于,使用如权利要求1至9任一项所述的制造方法所获得,该氮化铝晶圆片的外圆包含至少一对位槽口或一对位平边。
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