CN1128898A - 半导体器件及其制作方法 - Google Patents
半导体器件及其制作方法 Download PDFInfo
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- CN1128898A CN1128898A CN95117312A CN95117312A CN1128898A CN 1128898 A CN1128898 A CN 1128898A CN 95117312 A CN95117312 A CN 95117312A CN 95117312 A CN95117312 A CN 95117312A CN 1128898 A CN1128898 A CN 1128898A
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- gas
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- thin film
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title description 18
- 239000010408 film Substances 0.000 claims abstract description 252
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 149
- 239000010703 silicon Substances 0.000 claims abstract description 149
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 141
- 239000013078 crystal Substances 0.000 claims abstract description 141
- 239000010409 thin film Substances 0.000 claims abstract description 97
- 239000012535 impurity Substances 0.000 claims abstract description 93
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 67
- 238000000151 deposition Methods 0.000 claims abstract description 19
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- 238000010438 heat treatment Methods 0.000 claims abstract description 16
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- 230000008676 import Effects 0.000 claims description 43
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- 238000000427 thin-film deposition Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
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- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
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- 238000002156 mixing Methods 0.000 description 21
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 16
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- 238000004519 manufacturing process Methods 0.000 description 5
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248310/94 | 1994-09-19 | ||
JP248310/1994 | 1994-09-19 | ||
JP24831094A JP3599290B2 (ja) | 1994-09-19 | 1994-09-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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CN1128898A true CN1128898A (zh) | 1996-08-14 |
CN1054235C CN1054235C (zh) | 2000-07-05 |
Family
ID=17176178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95117312A Expired - Fee Related CN1054235C (zh) | 1994-09-19 | 1995-09-19 | 半导体器件及其制作方法 |
Country Status (7)
Country | Link |
---|---|
US (5) | US5670793A (zh) |
EP (2) | EP0707344B1 (zh) |
JP (1) | JP3599290B2 (zh) |
KR (3) | KR100270192B1 (zh) |
CN (1) | CN1054235C (zh) |
DE (1) | DE69527827T2 (zh) |
TW (2) | TW475252B (zh) |
Cited By (2)
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CN100380576C (zh) * | 2002-05-20 | 2008-04-09 | 先进微装置公司 | 以减少远处散射的栅极氧化制造高性能金属氧化物半导体晶体管的方法 |
CN107533975A (zh) * | 2015-05-08 | 2018-01-02 | 株式会社Eugene科技 | 非晶薄膜形成方法 |
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JP3599290B2 (ja) * | 1994-09-19 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体装置 |
JPH11145056A (ja) * | 1997-11-07 | 1999-05-28 | Sony Corp | 半導体材料 |
US6429101B1 (en) * | 1999-01-29 | 2002-08-06 | International Business Machines Corporation | Method of forming thermally stable polycrystal to single crystal electrical contact structure |
JP4389359B2 (ja) * | 2000-06-23 | 2009-12-24 | 日本電気株式会社 | 薄膜トランジスタ及びその製造方法 |
JP2004133329A (ja) * | 2002-10-15 | 2004-04-30 | Hitachi Ltd | 非線形光学薄膜及びそれを用いた非線形光学素子並びにそれを用いた光スイッチ |
US7180160B2 (en) | 2004-07-30 | 2007-02-20 | Infineon Technologies Ag | MRAM storage device |
WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
TWI438823B (zh) * | 2006-08-31 | 2014-05-21 | Semiconductor Energy Lab | 晶體半導體膜的製造方法和半導體裝置 |
US7662703B2 (en) * | 2006-08-31 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and semiconductor device |
US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
DE102011002236A1 (de) * | 2011-04-21 | 2012-10-25 | Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg | Verfahren zur Herstellung einer polykristallinen Schicht |
CN102154629B (zh) * | 2011-05-30 | 2013-03-13 | 上海森松化工成套装备有限公司 | 多晶硅cvd炉混合气进出量调节装置及其调节方法 |
KR102426015B1 (ko) * | 2015-09-24 | 2022-07-27 | 삼성디스플레이 주식회사 | 다결정 규소막 검사 장치 및 검사 방법 |
CN106876249B (zh) * | 2017-02-23 | 2019-04-26 | 河南仕佳光子科技股份有限公司 | 一种二氧化硅厚膜的制备方法 |
CN108149216A (zh) * | 2017-12-07 | 2018-06-12 | 上海申和热磁电子有限公司 | 一种改善低压化学气相淀积多晶硅薄膜质量的方法 |
EP3599290A3 (en) * | 2018-07-24 | 2020-06-03 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |
EP4129382A1 (en) | 2018-09-10 | 2023-02-08 | Boston Scientific Scimed, Inc. | Introducer with expandable capabilities |
KR20200073715A (ko) * | 2018-12-14 | 2020-06-24 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
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-
1994
- 1994-09-19 JP JP24831094A patent/JP3599290B2/ja not_active Expired - Lifetime
-
1995
- 1995-09-12 TW TW084109517A patent/TW475252B/zh not_active IP Right Cessation
- 1995-09-12 TW TW090130222A patent/TW541684B/zh not_active IP Right Cessation
- 1995-09-14 US US08/527,942 patent/US5670793A/en not_active Expired - Lifetime
- 1995-09-15 EP EP95114554A patent/EP0707344B1/en not_active Expired - Lifetime
- 1995-09-15 KR KR1019950030252A patent/KR100270192B1/ko not_active IP Right Cessation
- 1995-09-15 DE DE69527827T patent/DE69527827T2/de not_active Expired - Lifetime
- 1995-09-15 EP EP02001183A patent/EP1209726A3/en not_active Withdrawn
- 1995-09-19 CN CN95117312A patent/CN1054235C/zh not_active Expired - Fee Related
-
1997
- 1997-06-24 US US08/880,445 patent/US6080611A/en not_active Expired - Lifetime
-
1999
- 1999-05-29 KR KR1019990019595A patent/KR100397086B1/ko not_active IP Right Cessation
- 1999-10-07 US US09/413,890 patent/US6187100B1/en not_active Expired - Lifetime
-
2000
- 2000-06-19 US US09/597,985 patent/US6204155B1/en not_active Expired - Lifetime
-
2001
- 2001-01-05 KR KR1020010000579A patent/KR100396400B1/ko not_active IP Right Cessation
- 2001-03-16 US US09/809,046 patent/US6559037B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100380576C (zh) * | 2002-05-20 | 2008-04-09 | 先进微装置公司 | 以减少远处散射的栅极氧化制造高性能金属氧化物半导体晶体管的方法 |
CN107533975A (zh) * | 2015-05-08 | 2018-01-02 | 株式会社Eugene科技 | 非晶薄膜形成方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1209726A3 (en) | 2002-10-09 |
JP3599290B2 (ja) | 2004-12-08 |
DE69527827D1 (de) | 2002-09-26 |
US6204155B1 (en) | 2001-03-20 |
KR100396400B1 (ko) | 2003-09-03 |
US6559037B2 (en) | 2003-05-06 |
US6187100B1 (en) | 2001-02-13 |
TW541684B (en) | 2003-07-11 |
CN1054235C (zh) | 2000-07-05 |
DE69527827T2 (de) | 2003-04-03 |
US5670793A (en) | 1997-09-23 |
EP0707344A2 (en) | 1996-04-17 |
KR960012313A (ko) | 1996-04-20 |
EP1209726A2 (en) | 2002-05-29 |
EP0707344A3 (en) | 1996-08-28 |
JPH0888173A (ja) | 1996-04-02 |
TW475252B (en) | 2002-02-01 |
EP0707344B1 (en) | 2002-08-21 |
KR100397086B1 (ko) | 2003-09-06 |
KR100270192B1 (ko) | 2000-12-01 |
US6080611A (en) | 2000-06-27 |
US20020013038A1 (en) | 2002-01-31 |
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