CN112599436B - Detection structure and STI abnormal hole detection method - Google Patents
Detection structure and STI abnormal hole detection method Download PDFInfo
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Abstract
The invention provides a detection structure and a detection method of STI abnormal holes, wherein a grid electrode and a source electrode are floated on the basis of the detection structure that an STI region is positioned between a first N-type doped region and a second N-type doped region on a P-type substrate, and a drain electrode is connected with a preset voltage to obtain a first change condition of leakage current; floating the grid electrode, grounding the source electrode, and accessing the drain electrode to the preset voltage to obtain a second change condition of the leakage current; and judging whether the STI region has an abnormal hole or not according to the first change condition and the second change condition. According to the detection method, the change conditions of the leakage current are respectively obtained under two power-on conditions, when the STI region has the abnormal hole, the additional leakage current is generated, so that the second change condition of the leakage current inevitably has obvious change, and whether the STI region has the abnormal hole or not can be obviously judged through the two change conditions of the leakage current.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing technologies, and more particularly, to a detection structure and a method for detecting an STI abnormal hole.
Background
With the continuous development of science and technology, various electronic devices are widely applied to the life and work of people, and great convenience is brought to the daily life of people.
Based on various electronic devices, it is obvious that an integrated circuit chip cannot be separated, and the size of the integrated circuit chip is getting smaller and smaller at present, so that the aspect ratio of STI (Shallow Trench Isolation) is getting larger and larger, and the conventional CVD (Chemical vapor Deposition) method cannot fill STI well, so that the STI is filled by using the method of Flowable CVD (FCVD for short) at present.
Although FCVD has a good hole filling capability, FCVD is prone to have a local hole problem during the hole filling process, resulting in poor insulation of the detection structure and increased leakage current.
Currently, PFA/TEM is generally used in the art to verify whether STI has abnormal holes, but since the abnormal holes only occur occasionally and do not necessarily occur, the PFA/TEM is not necessarily able to detect the abnormal holes and the testing time is long.
Therefore, it is an urgent technical problem to be solved by those skilled in the art to provide an effective method for detecting STI abnormal holes.
Disclosure of Invention
In view of the above, to solve the above problems, the present invention provides a detection structure and a method for detecting an STI abnormal hole, and the technical solution is as follows:
a method for detecting STI abnormal holes is based on a detection structure, and the detection structure comprises: a P-type substrate; the P-type substrate is provided with a first N-type doped region, a second N-type doped region and an STI region arranged between the first N-type doped region and the second N-type doped region; a gate completely covering the STI region and partially covering the first N-type doped region and the second N-type doped region; the first N-type doped region is used as a source electrode, and the second N-type doped region is used as a drain electrode;
the detection method comprises the following steps:
floating the grid electrode and the source electrode, and accessing a preset voltage to the drain electrode to obtain a first change condition of leakage current;
floating the grid electrode, grounding the source electrode, and accessing the drain electrode to the preset voltage to obtain a second change condition of the leakage current;
and judging whether the STI region has an abnormal hole or not according to the first change condition and the second change condition.
Optionally, in the above detection method, when detecting an STI region of one of the detection structures, the determining whether the STI region has an abnormal hole according to the first variation and the second variation includes:
and when the leakage current variation trends of the second variation situation and the first variation situation are close, indicating that no abnormal hole exists in the STI region.
Optionally, in the above detection method, when detecting an STI region of one of the detection structures, the determining whether the STI region has an abnormal hole according to the first variation and the second variation includes:
when the leakage current variation trends of the second variation and the first variation have obvious difference, the STI region has abnormal holes.
Optionally, in the above detection method, when detecting STI regions of a plurality of detection structures connected in series, the determining whether the STI region has an abnormal hole according to the first change condition and the second change condition includes:
and when the leakage current variation trends of the second variation situation and the first variation situation accord with a preset multiple, indicating that no abnormal hole exists in the STI region.
Optionally, in the above detection method, when detecting STI regions of a plurality of detection structures connected in series, the determining whether the STI region has an abnormal hole according to the first change condition and the second change condition includes:
and when the leakage current variation trends of the second variation condition and the first variation condition exceed a preset multiple, indicating that the STI region has abnormal holes.
A detection structure, said detection structure comprising:
a P-type substrate; the P-type substrate is provided with a first N-type doped region, a second N-type doped region and an STI region arranged between the first N-type doped region and the second N-type doped region;
the grid electrode is arranged on one side of the P-type substrate, completely covers the STI region, and partially covers the first N-type doped region and the second N-type doped region;
the first N-type doped region serves as a source electrode, and the second N-type doped region serves as a drain electrode.
Optionally, in the detection structure, a bottom width of the STI region is 70 nm.
Optionally, in the detection structure, a width of the gate is 72 nm.
Optionally, in the detection structure, a width of the gate covering the first N-type doped region is 10 nm.
Optionally, in the detection structure, a width of the gate covering the second N-type doped region is 10 nm.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for detecting an STI abnormal hole, which is characterized in that based on a detection structure that an STI region is positioned between a first N-type doped region and a second N-type doped region on a P-type substrate, a grid electrode and a source electrode are floated, a drain electrode is connected with a preset voltage, and a first change condition of leakage current is obtained; floating the grid electrode, grounding the source electrode, and accessing the drain electrode to the preset voltage to obtain a second change condition of the leakage current; and judging whether the STI region has an abnormal hole or not according to the first change condition and the second change condition. According to the detection method, the change conditions of the leakage current are respectively obtained under two power-on conditions, when the STI region has the abnormal hole, the additional leakage current is generated, so that the second change condition of the leakage current inevitably has obvious change, and whether the STI region has the abnormal hole or not can be obviously judged through the two change conditions of the leakage current.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a detection structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a dimension structure of a detection structure according to an embodiment of the present invention;
fig. 3 is a schematic size structure diagram of another detection structure according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a dimension structure of another detection structure according to an embodiment of the present invention;
fig. 5 is a schematic flow chart illustrating a method for detecting an STI abnormal hole according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a situation of detecting a leakage current variation of an STI region having an abnormal hole according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating another embodiment of detecting a leakage current variation of an STI region with abnormal holes;
FIG. 8 is a schematic diagram illustrating another variation of leakage current for detecting abnormal holes in an STI region according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a detection structure according to an embodiment of the present invention.
The detection structure comprises:
a P-type substrate 11; the P-type substrate 11 is provided with a first N-type doped region 12, a second N-type doped region 13 and an STI region 14 arranged between the first N-type doped region 12 and the second N-type doped region 13;
a gate 15 disposed on one side of the P-type substrate 11, wherein the gate 15 completely covers the STI region 14 and partially covers the first N-type doped region 12 and the second N-type doped region 13;
the first N-type doped region 12 serves as a source 16, and the second N-type doped region 13 serves as a drain 17.
In this embodiment, the STI region 14 is disposed between the first N-type doped region 12 and the second N-type doped region 13 for isolating the first N-type doped region 12 from the second N-type doped region 13.
Further, based on the above embodiments of the present invention, referring to fig. 2, fig. 2 is a schematic diagram of a dimension structure of a detection structure according to an embodiment of the present invention.
The bottom width of the STI region 14 is 70 nm.
In this embodiment, the minimum width of the bottom of the STI region 14 is about 70nm, and only 70nm is taken as an example in the embodiment of the present invention.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 3, fig. 3 is a schematic diagram of a dimension structure of another detection structure provided in the embodiment of the present invention.
The width of the gate 15 is 72 nm.
In this embodiment, the width of the gate 15 is larger than the width of the top opening of the STI region 14, and 72nm is taken as an example in the embodiment of the present invention.
Further, based on the above embodiments of the present invention, referring to fig. 4, fig. 4 is a schematic diagram of a dimension structure of another detection structure provided in the embodiments of the present invention.
The width of the gate 15 covering the first N-type doped region 12 is 10 nm.
The width of the gate 15 covering the second N-type doped region 13 is 10 nm.
In this embodiment, the width of the gate 15 covering the first N-type doped region 12 and the second N-type doped region 13 is the same, and 10nm is taken as an example here for explanation, and the size is not limited.
Further, based on all the above embodiments of the present invention, another embodiment of the present invention further provides a method for detecting an STI abnormal hole, and referring to fig. 5, fig. 5 is a schematic flow chart of the method for detecting an STI abnormal hole according to the embodiment of the present invention.
The detection method is based on the detection structure provided by the above embodiment of the present invention, as shown in fig. 1, the detection structure includes: a P-type substrate; the P-type substrate is provided with a first N-type doped region, a second N-type doped region and an STI region arranged between the first N-type doped region and the second N-type doped region; a gate completely covering the STI region and partially covering the first N-type doped region and the second N-type doped region; the first N-type doped region serves as a source electrode, and the second N-type doped region serves as a drain electrode.
As shown in fig. 5, the detection method includes:
s101: and floating the grid electrode and the source electrode, and accessing a preset voltage to the drain electrode to obtain a first change condition of the leakage current.
S102: and floating the grid electrode, grounding the source electrode, and accessing the drain electrode to the preset voltage to obtain a second change condition of the leakage current.
S103: and judging whether the STI region has abnormal holes or not according to the first change condition and the second change condition.
In this embodiment, the detection method respectively obtains the change conditions of the leakage current under two power-on conditions, and when the abnormal hole exists in the STI region, the leakage current is generated, so that the second change condition of the leakage current inevitably changes significantly, and it is obvious that whether the abnormal hole exists in the STI region can be determined through the two change conditions of the leakage current.
Further, based on the above embodiment of the present invention, when detecting an STI region of the detection structure, the determining whether the STI region has an abnormal hole according to the first variation and the second variation includes:
and when the leakage current variation trends of the second variation situation and the first variation situation are close, indicating that no abnormal hole exists in the STI region.
In this embodiment, the first variation of the leakage current is: the grid electrode and the source electrode are floating, the drain electrode is connected with a preset voltage, the drain current of the source electrode is measured, and the drain current is increased along with the rise of the preset voltage of the drain electrode.
The second variation of the leakage current is: and floating the gate, grounding the source, accessing the drain to the preset voltage, measuring the drain current of the source, and when the STI region has no abnormal hole, indicating that no other extra drain current exists, increasing the drain current along with the rise of the preset voltage of the drain, wherein the change trend is basically the same as that of the first change condition of the drain current.
Further, based on the above embodiments of the present invention, referring to fig. 6, fig. 6 is a schematic diagram illustrating a situation of detecting a leakage current variation of an abnormal hole in an STI region according to an embodiment of the present invention.
When detecting an STI region of the detection structure, determining whether the STI region has an abnormal hole according to the first variation and the second variation, including:
when the leakage current variation trends of the second variation and the first variation have obvious difference, the STI region has abnormal holes.
In this embodiment, as shown in fig. 6, the first variation of the leakage current is: the grid electrode and the source electrode are floating, the drain electrode is connected with a preset voltage, the drain current of the source electrode is measured, and the drain current increases along with the rise of the preset voltage of the drain electrode.
The second variation of the leakage current is: and floating the grid electrode, grounding the source electrode, accessing the drain electrode to the preset voltage, measuring the leakage current of the source electrode, and when the STI region has an abnormal hole, generating the leakage current which jumps from the abnormal hole, so that the measured leakage current is obviously increased compared with the first change condition.
Therefore, by respectively acquiring the change conditions of the leakage current under two power-on conditions, when the STI region has abnormal holes, additional leakage current is generated, so that the second change condition of the leakage current inevitably has obvious change, and obviously, whether the STI region has the abnormal holes or not can be judged through the two change conditions of the leakage current.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic view illustrating another leakage current variation condition for detecting abnormal holes in an STI region according to another embodiment of the present invention.
When detecting a plurality of STI regions of the detecting structure connected in series, determining whether the STI regions have abnormal holes according to the first variation and the second variation, including:
and when the leakage current variation trends of the second variation situation and the first variation situation accord with a preset multiple, indicating that no abnormal hole exists in the STI region.
In this embodiment, the first variation of the leakage current is: the gate and the source are floating, the drain is connected to a predetermined voltage, and a leakage current to the source in a sensing structure is measured, the leakage current increasing with an increase in the predetermined voltage of the drain.
The second variation of the leakage current is: the grid electrode is floated, the source electrode is grounded, the drain electrode is connected to the preset voltage, and the leakage current to the source electrode in the plurality of serially connected sensing structures is measured.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic view illustrating a leakage current variation condition for detecting an abnormal hole in an STI region according to another embodiment of the present invention.
When detecting a plurality of STI regions of the detecting structure connected in series, determining whether the STI regions have abnormal holes according to the first variation and the second variation, including:
and when the leakage current variation trends of the second variation situation and the first variation situation exceed a preset multiple, indicating that the STI region has an abnormal hole.
In this embodiment, the first variation of the leakage current is: the gate and the source are floating, the drain is connected to a predetermined voltage, and a leakage current to the source in a sensing structure is measured, the leakage current increasing with the increase of the predetermined voltage of the drain.
The second variation of the leakage current is: the grid electrode is floated, the source electrode is grounded, the drain electrode is connected to the preset voltage, leakage current from the source electrode in the plurality of serially connected sensing structures is measured, obviously, the plurality of serially connected sensing structures can increase the test area, when an STI region has abnormal holes, the leakage current which is measured can also generate leakage current which jumps from the abnormal holes under the condition that the area of the leakage current is increased in multiples, and the leakage current which is measured can be obviously increased compared with the first change condition.
Therefore, the invention can also test the STI abnormal holes of a plurality of detection structures after being connected in series, thereby improving the test efficiency.
The structure and the method for detecting STI abnormal holes provided by the present invention are described in detail above, and the principle and the implementation of the present invention are explained herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for detecting STI abnormal holes is characterized in that the method is based on a detection structure, and the detection structure comprises: a P-type substrate; the P-type substrate is provided with a first N-type doped region, a second N-type doped region and an STI region arranged between the first N-type doped region and the second N-type doped region; a gate completely covering the STI region and partially covering the first N-type doped region and the second N-type doped region; the first N-type doped region is used as a source electrode, and the second N-type doped region is used as a drain electrode;
the detection method comprises the following steps:
the grid electrode and the source electrode are floated, and the drain electrode is connected with a preset voltage capable of being increased to obtain a first change condition of leakage current;
floating the grid electrode, grounding the source electrode, and accessing the drain electrode to the preset voltage capable of being increased to obtain a second change condition of the leakage current;
and judging whether the STI region has an abnormal hole or not according to the first change condition and the second change condition.
2. The detection method as claimed in claim 1, wherein when detecting an STI region of the detection structure, the determining whether the STI region has an abnormal hole according to the first variation and the second variation comprises:
and when the leakage current variation trends of the second variation situation and the first variation situation are close, indicating that no abnormal hole exists in the STI region.
3. The detection method as claimed in claim 1, wherein when detecting an STI region of the detection structure, the determining whether the STI region has an abnormal hole according to the first variation and the second variation comprises:
when the leakage current variation trends of the second variation and the first variation have obvious difference, the STI region has abnormal holes.
4. The detection method as claimed in claim 1, wherein when detecting STI regions of a plurality of serially connected detection structures, said determining whether the STI regions have abnormal holes according to the first variation and the second variation comprises:
and when the leakage current variation trends of the second variation situation and the first variation situation accord with a preset multiple, indicating that no abnormal hole exists in the STI region.
5. The detection method as claimed in claim 1, wherein when detecting STI regions of a plurality of serially connected detection structures, said determining whether the STI regions have abnormal holes according to the first variation and the second variation comprises:
and when the leakage current variation trends of the second variation situation and the first variation situation exceed a preset multiple, indicating that the STI region has an abnormal hole.
6. A detection structure, comprising:
a P-type substrate; the P-type substrate is provided with a first N-type doped region, a second N-type doped region and an STI region arranged between the first N-type doped region and the second N-type doped region;
the grid electrode is arranged on one side of the P-type substrate, completely covers the STI region, and partially covers the first N-type doped region and the second N-type doped region;
the first N-type doped region serves as a source electrode, and the second N-type doped region serves as a drain electrode.
7. The detection structure of claim 6 wherein the bottom width of the STI region is 70 nm.
8. The detection structure of claim 6, wherein the width of the gate is 72 nm.
9. The detection structure of claim 6 wherein a width of the gate overlying the first N-type doped region is 10 nm.
10. The detection structure of claim 6 wherein a width of the gate overlying the second N-type doped region is 10 nm.
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| US5486772A (en) * | 1994-06-30 | 1996-01-23 | Siliconix Incorporation | Reliability test method for semiconductor trench devices |
| TWI237862B (en) * | 2003-08-27 | 2005-08-11 | Nanya Technology Corp | Shallow trench isolation void detecting method and structure for the same |
| KR101030295B1 (en) * | 2004-12-30 | 2011-04-20 | 동부일렉트로닉스 주식회사 | Field Transistor for Testing Isolation in Semiconductor Device |
| JP2007123755A (en) * | 2005-10-31 | 2007-05-17 | Matsushita Electric Ind Co Ltd | Void detector, manufacturing method therefor, and evaluation method |
| CN101295624A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Defect detecting structure, and production method and detection method thereof |
| CN101304020B (en) * | 2007-05-11 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | Test mechanism for testing chip fabrication defect and manufacturing method thereof |
| CN109560001B (en) * | 2018-11-30 | 2020-12-11 | 上海华力微电子有限公司 | Defect detection structure, device and method for semiconductor device |
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| CN102509711A (en) * | 2011-11-10 | 2012-06-20 | 上海华力微电子有限公司 | Method for detecting defect of shallow trench isolation |
| CN102610525A (en) * | 2012-03-22 | 2012-07-25 | 上海华力微电子有限公司 | Method for reducing leakage of gate-induced drain electrode of semiconductor device |
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