CN112080217A - Dicing tape and dicing die-bonding film - Google Patents
Dicing tape and dicing die-bonding film Download PDFInfo
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- CN112080217A CN112080217A CN202010495568.0A CN202010495568A CN112080217A CN 112080217 A CN112080217 A CN 112080217A CN 202010495568 A CN202010495568 A CN 202010495568A CN 112080217 A CN112080217 A CN 112080217A
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- resin
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- resin layer
- die
- dicing tape
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/10—Presence of homo or copolymers of propene
- C09J2423/106—Presence of homo or copolymers of propene in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention provides a dicing tape and a dicing die-bonding film. The dicing tape includes a base material and an adhesive layer laminated on the base material, the base material including: a 1 st resin layer containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer laminated on one surface of the 1 st resin layer; and a 3 rd resin layer laminated on the 2 nd resin layer on a side opposite to the 1 st resin layer, wherein the 2 nd resin layer has a lower tensile storage modulus at room temperature than the 1 st resin layer and the 3 rd resin layer.
Description
Cross reference to related applications
The present application claims priority from Japanese patent application No. 2019-110199, which is incorporated by reference into the description of the present application specification.
Technical Field
The present invention relates to a dicing tape and a dicing die-bonding film. More specifically, the present invention relates to a dicing tape and a dicing die-bonding film having a laminated structure as a base material.
Background
Conventionally, in the manufacture of semiconductor devices, dicing die-bonding films have been used to obtain semiconductor chips for die bonding. The dicing die-bonding film includes: a die-bonding tape in which an adhesive layer is laminated on a base material; and a die-bonding layer laminated on the adhesive layer of the die-bonding tape.
As a method for obtaining a semiconductor chip (Die) for Die bonding by using the above-described dicing Die-bonding film, a method having the following steps is known: a half-cut step of forming a groove in a semiconductor wafer by processing the semiconductor wafer into chips (Die) by a dicing process, and grinding the semiconductor wafer to reduce the thickness; a back grinding step of grinding the semiconductor wafer after the half-cut step to reduce the thickness; a mounting step of attaching one surface (for example, a surface on the opposite side of the circuit surface) of the semiconductor wafer after the back grinding step to the die bonding layer to fix the semiconductor wafer to the dicing tape; an expanding step of expanding the interval between the semiconductor chips subjected to the half-cut processing; a notch maintaining step of maintaining the interval between the semiconductor chips; a pickup step of peeling off the chip bonding layer and the adhesive layer to take out the semiconductor chip in a state where the chip bonding layer is attached; and a die bonding step of bonding the semiconductor chip with the die bonding layer attached thereto to an adherend (for example, a mounting substrate).
In the notch maintaining step, the distance (notch) between the adjacent semiconductor chips to be cut is maintained by thermally shrinking the dicing tape by directing hot air (for example, 100 to 130 ℃) to the dicing tape and then cooling and solidifying the dicing tape.
In the notch maintaining step of the method for obtaining a semiconductor chip for die bonding as described above, it is known that the physical properties of the dicing tape and the physical properties of the base material satisfy a specific relationship in order to maintain the notch more sufficiently (for example, patent document 1).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2016/152919
Disclosure of Invention
Problems to be solved by the invention
However, further studies are required to maintain the notch more sufficiently in the notch maintaining step.
Accordingly, an object of the present invention is to provide a dicing tape and a dicing die-bonding film capable of maintaining a notch more sufficiently.
Means for solving the problems
The dicing tape of the present invention has an adhesive layer laminated on a base material,
the base material includes: a 1 st resin layer containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer laminated on one surface of the 1 st resin layer; and a 3 rd resin layer laminated on the 2 nd resin layer opposite to the 1 st resin layer,
the 2 nd resin layer has a lower tensile storage modulus at room temperature than the 1 st resin layer and the 3 rd resin layer.
In the above dicing tape, preferably:
the 1 st resin has a melting point of 115 ℃ to 130 ℃.
In the above dicing tape, preferably:
the 1 st resin has a mass average molecular weight of 100000 or more and 1000000 or less and a number average molecular weight of 20000 or more and 600000 or less.
In the above dicing tape, preferably:
the above-mentioned 1 st resin contains a polypropylene resin as a polymerization product obtained by using a metallocene catalyst.
In the above dicing tape, preferably:
the thickness of the base material is 60 μm or more and 160 μm or less,
the ratio of the thickness of the 1 st resin layer to the thickness of the 2 nd resin layer is 1/4-1/20,
the ratio of the thickness of the 3 rd resin layer to the thickness of the 2 nd resin layer is 1/4-1/20.
In the above dicing tape, preferably:
the 2 nd resin layer contains an α -olefin thermoplastic elastomer.
In the above dicing tape, preferably:
the α -olefin-based thermoplastic elastomer contains at least 1 of a homopolymer of an α -olefin or a copolymer of an α -olefin.
The dicing die-bonding film of the present invention comprises:
the above dicing tape, and
and a chip bonding layer laminated on the adhesive layer of the dicing tape.
Drawings
FIG. 1: a cross-sectional view showing the structure of a dicing tape according to an embodiment of the present invention.
FIG. 2: a cross-sectional view showing the structure of the dicing die-bonding film according to the embodiment of the present invention.
FIG. 3A: a cross-sectional view schematically showing a state of half-cut processing in a method of manufacturing a semiconductor integrated circuit.
FIG. 3B: a cross-sectional view schematically showing a state of half-cut processing in a method of manufacturing a semiconductor integrated circuit.
FIG. 3C: a cross-sectional view schematically showing a state of back grinding processing in the method of manufacturing a semiconductor integrated circuit.
FIG. 3D: a cross-sectional view schematically showing a state of back grinding processing in the method of manufacturing a semiconductor integrated circuit.
FIG. 4A: a cross-sectional view schematically showing a state of a mounting process in a method of manufacturing a semiconductor integrated circuit.
FIG. 4B: a cross-sectional view schematically showing a state of a mounting process in a method of manufacturing a semiconductor integrated circuit.
FIG. 5A: a cross-sectional view schematically showing the state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 5B: a cross-sectional view schematically showing the state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 5C: a cross-sectional view schematically showing the state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 6A: a cross-sectional view schematically showing a state of an extension process at normal temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 6B: a cross-sectional view schematically showing a state of an extension process at normal temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 7: a cross-sectional view schematically showing the state of a notch maintaining step in a method for manufacturing a semiconductor integrated circuit.
FIG. 8: a cross-sectional view schematically showing a state of a pickup process in a method of manufacturing a semiconductor integrated circuit.
Description of the reference numerals
1 base material
2 adhesive layer
3 chip bonding layer
10 cutting belt
20-dicing die-bonding film
1a No. 1 resin layer
1b No. 2 resin layer
1c No. 3 resin layer
G back side grinding belt
H holder
J adsorbs anchor clamps
P pin component
R cutting ring
Tape for T-wafer processing
U jack-up component
W semiconductor wafer
Detailed Description
An embodiment of the present invention will be described below.
[ cutting band ]
As shown in fig. 1, the dicing tape 10 of the present embodiment is a dicing tape 10 in which an adhesive layer 2 is laminated on a base material 1.
The base material 1 includes: a 1 st resin layer 1a containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer 1b laminated on one surface of the 1 st resin layer 1 a; and a 3 rd resin layer 1c laminated on the 2 nd resin layer 1b on the opposite side of the 1 st resin layer 1a, wherein the 2 nd resin layer 1b has a lower tensile storage modulus at room temperature (23 ℃) than the 1 st resin layer 1a and the 3 rd resin layer 1 c.
The 2 nd resin layer 1b contains a 2 nd resin, and the 3 rd resin layer 1c contains a 1 st resin.
Here, the molecular weight dispersion of the 1 st resin means: the ratio of the mass average molecular weight of the 1 st resin to the number average molecular weight of the 1 st resin.
The reason why the substrate 1 can maintain the notch more sufficiently by including the 1 st resin layer 1a containing the 1 st resin having a molecular weight dispersion degree of 5 or less is considered as follows.
It is considered that the 1 st resin exhibits a small molecular weight dispersion of 5 or less, that is, the 1 st resin is a resin having a relatively uniform molecular weight, and therefore the temperature at which the layer of the 1 st resin layer including such 1 st resin melts becomes relatively uniform.
Further, since the temperature at which the layer is melted is relatively uniform, it is considered that, when the dicing tape 10 is thermally shrunk by directing hot air (for example, 100 to 130 ℃) to the dicing tape 10 and then cooled and solidified in the slit maintaining step, the layer portion melted by the hot air can be solidified at a relatively uniform speed. That is, it is considered that the melted layer portion can be relatively rapidly solidified so that the speed of solidification of the melted layer portion does not vary.
As a result, it is considered that the shrinkage of the base material 1 can be more sufficiently suppressed after the dicing tape 10 is heat-shrunk, and the cuts can be more sufficiently maintained.
The number average molecular weight and the mass average molecular weight of the 1 st resin can be measured by GPC under the following conditions.
The measurement device: model number "Alliance GPC 2000 type" manufactured by Waster corporation "
Column: 2 TSkgel GMH6-HT (manufactured by Tosoh corporation) were connected in series, and further 2 TSkgel GMH-HTL were connected in series on the downstream side
Column size: TSKgel GMH6-HT and TSKgel GMH-HTL are both 7.5mm in inside diameter x 300mm in length
Column temperature: 140 deg.C
Flow rate: 1.0 mL/min
Eluent: ortho-dichlorobenzene
Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene)
Sample injection amount: 40 μ L
The detector: RI (differential refractometer)
Standard sample: polystyrene
The 1 st resin layer 1a and the 3 rd resin layer 1c may be resin layers having a tensile storage modulus at room temperature of 10MPa to 100MPa, and the 2 nd resin layer 1b may be resin layers having a tensile storage modulus at room temperature of 200MPa to 500 MPa.
The tensile storage modulus at ordinary temperature can be measured as follows.
More specifically, the tensile storage modulus of a test piece having a dicing tape with a length of 40mm (measurement length) and a width of 10mm was measured at a temperature of-50 to 100 ℃ under the conditions of a frequency of 1Hz, a deformation of 0.1%, a temperature rise rate of 10 ℃/min and an inter-jig distance of 22.5mm using a solid viscoelasticity measuring apparatus (for example, model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) as a test piece. At this time, the value at 23 ℃ was read as the tensile storage modulus at 23 ℃.
The measurement is performed by stretching the test piece in the MD direction (resin flow direction).
As the 1 st resin, a non-elastomer is preferably used. As the non-elastomer, a polypropylene resin (hereinafter referred to as metallocene PP) which is a polymerization product obtained by using a metallocene catalyst is exemplified. The metallocene PP includes a propylene/α -olefin copolymer as a polymerization product obtained by using a metallocene catalyst. By including the metallocene PP in the 1 st resin layer 1a and the 3 rd resin layer 1c, the dicing tape can be efficiently produced, and the semiconductor wafer bonded to the dicing tape can be efficiently cut.
Commercially available metallocene PP includes WINTEC WXK1233 and WINTEC WMX03 (both available from Japan Polypropylene corporation).
Here, the metallocene catalyst is a catalyst comprising a transition metal compound of group 4 of the periodic table (so-called metallocene compound) containing a ligand having a cyclopentadienyl skeleton and a cocatalyst which reacts with the metallocene compound to activate the metallocene compound into a stable ionic state, the metallocene catalyst containing an organoaluminum compound as necessary. The metallocene compound is a crosslinked metallocene compound capable of stereoregular polymerization of propylene.
In the above propylene/α -olefin copolymer as a polymerization product obtained by using the metallocene catalyst, propylene/alpha-olefin random copolymers as polymerization products obtained by using metallocene catalysts are preferred, in the above propylene/α -olefin random copolymer as a polymerization product obtained by using the metallocene catalyst, preferably a copolymer selected from the group consisting of a propylene/C2 α -olefin random copolymer as a polymerization product obtained by a metallocene catalyst, a propylene/C4 α -olefin random copolymer as a polymerization product obtained by a metallocene catalyst, and a propylene/C5 α -olefin random copolymer as a polymerization product obtained by a metallocene catalyst, of these, the propylene/ethylene random copolymer is most preferable as a polymerization product obtained by using a metallocene catalyst.
The propylene/α -olefin random copolymer as the polymerization product obtained by the metallocene catalyst preferably has a melting point of 80 ℃ to 140 ℃, particularly 100 ℃ to 130 ℃ from the viewpoints of coextrudability with the elastomer layer and cuttability of a semiconductor wafer attached to a dicing tape.
The melting point of the above propylene/α -olefin random copolymer as a polymerization product obtained by using the metallocene catalyst can be measured by Differential Scanning Calorimetry (DSC) analysis. For example, the peak temperature of the endothermic peak can be measured by raising the temperature to 200 ℃ at a temperature raising rate of 5 ℃/min under a nitrogen gas flow using a differential scanning calorimeter apparatus (model DSC Q2000 manufactured by TA INSTRUMENTS Co., Ltd.).
The 1 st resin preferably has a mass average molecular weight of 100000 or more and 1000000 or less and a number average molecular weight of 20000 or more and 600000 or less.
As the 2 nd resin, an elastomer is preferably used. Examples of the elastomer include an α -olefin thermoplastic elastomer. Examples of the α -olefin-based thermoplastic elastomer include homopolymers of α -olefins, copolymers of 2 or more α -olefins, block polypropylene, random polypropylene, and copolymers of one or two or more α -olefins with another vinyl monomer.
The α -olefin-based thermoplastic elastomer may be a combination of a propylene-ethylene copolymer and a propylene homopolymer, or a propylene-ethylene- α -olefin terpolymer having 4 or more carbon atoms.
Examples of commercially available α -olefin thermoplastic elastomers include Vistamaxx3980 (manufactured by ExxonMobil Chemical Company) which is a propylene elastomer resin.
The homopolymer of an α -olefin is preferably a homopolymer of an α -olefin having 2 to 12 carbon atoms. Examples of such homopolymers include ethylene, propylene, 1-butene, and 4-methyl-1-pentene.
Examples of the copolymer of 2 or more kinds of α -olefins include an ethylene/propylene copolymer, an ethylene/1-butene copolymer, an ethylene/propylene/1-butene copolymer, an ethylene/α -olefin copolymer having 5 or more and 12 or less carbon atoms, a propylene/ethylene copolymer, a propylene/1-butene copolymer, and a propylene/α -olefin copolymer having 5 or more and 12 or less carbon atoms.
Examples of the copolymer of one or two or more kinds of α -olefins with another vinyl monomer include an ethylene-vinyl acetate copolymer (EVA) and the like.
When the substrate 1 has the three-layer structure as described above, it is preferably obtained by coextrusion molding in which the 1 st resin layer 1a and the 2 nd resin layer 1c are laminated on both sides of the 2 nd resin layer 1b by coextrusion molding. As the coextrusion molding, any suitable coextrusion molding usually performed in the production of a film, a sheet, or the like can be employed. In the coextrusion molding, the inflation method and the coextrusion T-die method are preferably used in view of efficiently and inexpensively obtaining the base material 1.
When the 2 nd resin layer 1b contains an α -olefin thermoplastic elastomer and the 1 st and 3 rd resin layers 1a and 1c contain a polyolefin such as metallocene PP, the 2 nd resin layer 1b preferably contains the α -olefin thermoplastic elastomer in an amount of 50 mass% to 100 mass%, more preferably 70 mass% to 100 mass%, further preferably 80 mass% to 100 mass%, particularly preferably 90 mass% to 100 mass%, and most preferably 95 mass% to 100 mass% with respect to the total mass of the elastomer contained in the 2 nd resin layer 1 b. By including the α -olefin thermoplastic elastomer in the above range, the affinity between the 1 st resin layer 1a and the 2 nd resin layer 1b and the affinity between the 3 rd resin layer 1c and the 2 nd resin layer 1b are increased, so that the substrate 1 can be extrusion molded relatively easily, and the semiconductor wafer bonded to the dicing tape can be cut efficiently.
In the case of obtaining the substrate 1 having a laminated structure by coextrusion molding, the 1 st resin layer 1a and the 2 nd resin layer 1b, and the 3 rd resin layer 3c and the 2 nd resin layer 1b are in contact with each other in a state of being heated and melted, and therefore, it is preferable that the difference in melting point between the 1 st resin and the 2 nd resin is small. By making the difference in melting point small, excessive heat application to the low-melting-point resin can be suppressed, and therefore the generation of by-products due to thermal degradation of the low-melting-point resin can be suppressed. In addition, the following can also be suppressed: the viscosity of the low-melting resin is excessively lowered, and thus a stacking failure occurs between the 1 st resin layer 1a and the 2 nd resin layer 1b, and between the 3 rd resin layer 1c and the 2 nd resin layer 1 b. The difference in melting point between the 1 st resin and the 2 nd resin is preferably 0 ℃ or more and 70 ℃ or less, and more preferably 0 ℃ or more and 55 ℃ or less.
The melting points of the 1 st resin and the 2 nd resin can be measured by the above-described method.
The thickness of the substrate 1 is preferably 55 μm to 195 μm, more preferably 55 μm to 190 μm, still more preferably 55 μm to 170 μm, and most preferably 60 μm to 160 μm. By setting the thickness of the base material 1 to the above range, the dicing tape can be efficiently manufactured, and the semiconductor wafer bonded to the dicing tape can be efficiently cut.
The thickness of the substrate 1 can be determined, for example, as follows: the thickness was measured at any 5 randomly selected points using a direct-reading thickness meter (model R-205 manufactured by PEACOCK), and the thickness was obtained by arithmetically averaging the thicknesses.
In the substrate 1, the ratio of the thickness of the 1 st resin layer 1a to the thickness of the 2 nd resin layer 1b and the ratio of the thickness of the 3 rd resin layer 1c to the thickness of the 2 nd resin layer 1b are preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more and 1/3.5 or less, further preferably 1/25 or more and 1/4 or less, particularly preferably 1/22 or more and 1/4 or less, and are preferably 1/20 or more and 1/4 or less. By setting the ratio of the thickness of the 1 st resin layer 1a to the thickness of the 2 nd resin layer 1b and the ratio of the thickness of the 3 rd resin layer 1c to the thickness of the 2 nd resin layer 1b to the above ranges, the semiconductor wafer attached to the dicing tape can be cut efficiently.
The thicknesses of the 1 st resin layer 1a, the 2 nd resin layer 1b, and the 3 rd resin layer 1c can be determined by observing a cross section cut out from the 1 st resin layer 1 by a freeze-slicing method with a microscope. For example, the thickness of 3 points arbitrarily selected in the MD direction (resin flow direction) of the 1 st resin layer 1a, the 2 nd resin layer 1b, and the 3 rd resin layer 1c at the center of a cross section cut by a cryo-section method is measured with an electron microscope at a magnification of 100 times, and the measured values at the 3 points measured for each layer are arithmetically averaged to obtain the thickness.
The 1 st resin layer 1a and the 3 rd resin layer 1c may have a single-layer (1-layer) structure or a laminated structure. The 1 st resin layer 1a preferably has a 1-5-layer structure, more preferably a 1-3-layer structure, and still more preferably a 1-2-layer structure, and is most preferably a 1-layer structure. When the 1 st resin layer 1a and the 3 rd resin layer 1c have a laminated structure, all layers may contain the same 1 st resin, or at least 2 layers may contain different 1 st resins.
The 2 nd resin layer 1b may have a single layer (1 layer) structure or a laminated structure. The 2 nd resin layer 1b preferably has a 1-5-layer structure, more preferably has a 1-3-layer structure, and still more preferably has a 1-2-layer structure, and an embodiment of the present invention is most preferably a 1-layer structure. When the 2 nd resin layer 1b has a laminated structure, all layers may contain the same 2 nd resin, or at least 2 layers may contain different 2 nd resins.
Here, if the elastomer layer is disposed on the outermost layer of the substrate 1, the elastomer layers disposed on the outermost layer tend to stick together (tend to stick together) when the substrate 1 is formed into a roll. Therefore, it becomes difficult to unwind the substrate 1 from the roll body. In contrast, in the substrate 1 of the present embodiment, the 1 st resin layer 1a and the 3 rd resin layer 1c are non-elastic layers, and the 1 st resin layer 1b is an elastic layer, that is, the non-elastic layers are disposed as outermost layers, and therefore, the substrate 1 in this form is excellent in blocking resistance. Thereby, the production of a semiconductor device using the dicing tape 10 can be suppressed from being delayed due to sticking.
The 1 st resin layer 1a is preferably composed of a resin having a melting point of 115 ℃ or higher and 130 ℃ or lower and a molecular weight dispersion (mass average molecular weight/number average molecular weight) of 5 or lower. Such a resin may be metallocene PP.
By forming the first resin layer 1a of the resin as described above, it is possible to relatively shorten the time required for the nonelastic layer (outermost layer) melted by hot air to solidify after the dicing tape is thermally contracted by directing hot air (for example, 100 to 130 ℃) to the dicing tape located at the boundary portion with the outer edge of the semiconductor wafer in order to maintain the interval (notch) between the plurality of semiconductor chips obtained by cutting the semiconductor wafer at low temperature.
Thereby, the incision can be better maintained.
The adhesive layer 2 contains an adhesive. The adhesive layer 2 holds the semiconductor wafer for singulation into semiconductor chips by adhesion. In the present embodiment, the adhesive layer 2 is laminated on the 1 st resin layer 1a of the substrate 1.
As the adhesive, an adhesive whose adhesive force can be reduced by an external action during use of the dicing tape 10 (hereinafter referred to as an adhesion-reducing adhesive) can be mentioned.
When an adhesion-reducing adhesive is used as the adhesive, the adhesive layer 2 can be used separately in a state showing a high adhesive force (hereinafter referred to as a high-adhesion state) and a state showing a low adhesive force (hereinafter referred to as a low-adhesion state) during use of the dicing tape 10. For example, when a semiconductor wafer attached to the dicing tape 10 is to be cut, a high adhesion state is used in order to suppress the plurality of semiconductor chips singulated by cutting the semiconductor wafer from floating or peeling from the adhesive layer 2. In contrast, after the semiconductor wafer is cut, a low adhesion state is used to pick up the singulated plurality of semiconductor chips so that the plurality of semiconductor chips can be easily picked up from the adhesive layer 2.
Examples of the adhesion-reducing adhesive include: an adhesive that can be cured by irradiation with radiation during use of the dicing tape 10 (hereinafter referred to as a radiation-curable adhesive).
Examples of the radiation-curable pressure-sensitive adhesive include: adhesives of the type that are cured by irradiation with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X rays. Among these, an adhesive that cures by irradiation with ultraviolet rays (ultraviolet-curing adhesive) is preferably used.
Examples of the radiation-curable pressure-sensitive adhesive include additive type radiation-curable pressure-sensitive adhesives containing a base polymer such as an acrylic polymer, and a radiation-polymerizable monomer component and a radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.
The acrylic polymer may be an acrylic polymer containing a monomer unit derived from a (meth) acrylate ester. Examples of the (meth) acrylate include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate.
The adhesive layer 2 may contain an external crosslinking agent. Any external crosslinking agent may be used as long as it can react with the acrylic polymer as the base polymer to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents.
Examples of the radiation-polymerizable monomer component include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, and polybutadiene type. The content ratio of the radiation polymerizable monomer component and the radiation polymerizable oligomer component in the radiation curable pressure-sensitive adhesive may be selected within a range in which the adhesiveness of the pressure-sensitive adhesive layer 2 is appropriately reduced.
The radiation-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, and acyl phosphonates.
The pressure-sensitive adhesive layer 2 may contain, in addition to the above components, a crosslinking accelerator, a thickener, an antioxidant, a pigment, a colorant such as a dye, and the like.
The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and further preferably 5 μm or more and 25 μm or less.
[ dicing die-bonding film ]
Next, the dicing die-bonding film 20 will be described with reference to fig. 2. In the description of dicing the die-bonding film 20, the description of the portions overlapping with the dicing tape 10 will not be repeated.
As shown in fig. 2, the dicing die-bonding film 20 of the present embodiment includes a dicing tape 10 in which an adhesive layer 2 is laminated on a base material 1, and a die-bonding layer 3 laminated on the adhesive layer 2 of the dicing tape 10.
The base material 1 includes: a 1 st resin layer 1a containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer 1b laminated on one surface of the 1 st resin layer 1 a; and a 3 rd resin layer 1c laminated on the 2 nd resin layer 1b on the opposite side of the 1 st resin layer 1a, wherein the 2 nd resin layer 1b has a lower tensile storage modulus at room temperature (23 ℃) than the 1 st resin layer 1a and the 3 rd resin layer 1 c.
The 2 nd resin layer 1b contains a 2 nd resin, and the 3 rd resin layer 1c contains a 1 st resin.
In the dicing die-bonding film 20, a semiconductor wafer is attached to the die-bonding layer 3.
In the cutting of the semiconductor wafer using the dicing die-bonding film 20, the die-bonding layer 3 is also cut together with the semiconductor wafer. The die bonding layer 3 is cut into a size corresponding to the size of the plurality of singulated semiconductor chips. Thus, a semiconductor chip with the chip bonding layer 3 can be obtained.
In the dicing die-bonding film 20 of the present embodiment, similarly to the dicing tape 10, the melting point of the 1 st resin is preferably 115 ℃ or higher and 130 ℃ or lower, the 1 st resin is preferably 100000 or higher and 1000000 or lower in mass average molecular weight and 20000 or higher and 600000 or lower in number average molecular weight, and the 1 st resin is preferably a polypropylene resin which is a polymerization product obtained by a metallocene catalyst.
In addition, as with the dicing tape 10, the dicing die-bonding film 20 preferably includes: the thickness of the substrate 1 is 60 μm to 160 μm, the ratio of the thickness of the 1 st resin layer 1a to the thickness of the 2 nd resin layer 1b is 1/4 to 1/20, and the ratio of the thickness of the 3 rd resin layer 1c to the thickness of the 2 nd resin layer 1b is 1/4 to 1/20.
In addition, as in the dicing tape 10, the dicing die-bonding film 20 preferably includes the 2 nd resin layer 1b made of an α -olefin thermoplastic elastomer, and the α -olefin thermoplastic elastomer preferably includes at least 1 of a homopolymer of α -olefin and a copolymer of α -olefin.
The die bonding layer 3 is preferably thermosetting. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the chip bonding layer 3, thermosetting properties can be imparted to the chip bonding layer 3.
When the chip bonding layer 3 contains a thermosetting resin, examples of such thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, epoxy resins are preferably used.
Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetraphenylethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins.
Examples of the phenolic resin as a curing agent for the epoxy resin include novolak type phenolic resins, resol type phenolic resins, and polyoxystyrenes such as polyoxystyrenes.
When the chip bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include an acrylic resin containing a thermosetting functional group. As the acrylic resin in the thermosetting functional group-containing acrylic resin, an acrylic resin containing a monomer unit derived from a (meth) acrylate ester can be cited.
The curing agent can be selected for the thermosetting resin having the thermosetting functional group according to the kind of the thermosetting functional group.
The die bonding layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the resin component or increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds.
The chip bonding layer 3 may further contain a thermoplastic resin in addition to the thermosetting resin. The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as polyamide 6 and polyamide 6, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, and a fluororesin. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that ionic impurities are small, heat resistance is high, and connection reliability by the chip bonding layer is easily ensured.
The acrylic resin is preferably a polymer containing a monomer unit derived from a (meth) acrylate ester as the largest monomer unit in mass proportion. Examples of the (meth) acrylate include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. The acrylic resin may contain a monomer unit derived from another component copolymerizable with the (meth) acrylate. Examples of the other component include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, a functional group-containing monomer such as acrylamide and acrylonitrile, and various polyfunctional monomers. From the viewpoint of achieving high cohesive force in the die attach layer, the acrylic resin is preferably a copolymer of (meth) acrylate (particularly, an alkyl (meth) acrylate in which the alkyl group has 4 or less carbon atoms) and a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate and butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.
The chip bonding layer 3 may contain one or two or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion scavenger.
The thickness of the chip bonding layer 3 is preferably 40 μm or more, more preferably 60 μm or more, and further preferably 80 μm or more. The thickness of the chip bonding layer 3 is preferably 200 μm or less, more preferably 160 μm or less, and still more preferably 120 μm or less.
The dicing die-bonding film 20 of the present embodiment can be used as an auxiliary tool for manufacturing a semiconductor integrated circuit, for example. A specific example of using the dicing die-bonding film 20 will be described below.
An example of using the dicing die-bonding film 20 in which the base material 1 is one layer will be described below.
The method for manufacturing a semiconductor integrated circuit includes the steps of: a half-cut step of forming a groove in a semiconductor wafer by processing the semiconductor wafer into chips (Die) by a dicing process, and grinding the semiconductor wafer to reduce the thickness; a back grinding step of grinding the semiconductor wafer after the half-cut step to reduce the thickness; a mounting step of attaching one surface (for example, a surface opposite to the circuit surface) of the semiconductor wafer after the back grinding step to the die bonding layer 3 to fix the semiconductor wafer to the dicing tape 10; an expanding step of expanding the interval between the semiconductor chips subjected to the half-cut processing; a notch maintaining step of maintaining the interval between the semiconductor chips; a pickup step of peeling off the chip bonding layer 3 and the adhesive layer 2 to take out the semiconductor chip (Die) in a state where the chip bonding layer 3 is attached; and a Die bonding step of bonding the semiconductor chip (Die) with the Die bonding layer 3 attached thereto to an adherend. In performing these steps, the dicing tape (dicing die-bonding film) of the present embodiment is used as a manufacturing aid.
In the half-cut step, as shown in fig. 3A and 3B, half-cut processing for cutting the semiconductor integrated circuit into chips (Die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface (see fig. 3A). Further, the dicing ring R is attached to the wafer processing tape T (see fig. 3A). The dividing grooves are formed in a state where the wafer processing tape T is attached (see fig. 3B). In the back grinding step, as shown in fig. 3C and 3D, the semiconductor wafer is ground to be thin. Specifically, the back grinding tape G is attached to the surface on which the grooves are formed, and the wafer processing tape T attached first is peeled off (see fig. 3C). The grinding process is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (see fig. 3D).
In the mounting step, as shown in fig. 4A to 4B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, the semiconductor wafer W (see fig. 4A) subjected to the half-dicing process is attached to the exposed surface of the chip bonding layer 3. After that, the back grinding tape G is peeled off from the semiconductor wafer W (see fig. 4B).
In the expanding step, as shown in fig. 5A to 5C, the cutting ring R is fixed to the holder H of the expanding device. The dicing die-bonding film 20 is lifted from the lower side by using a jack member U provided in the spreading device, and the dicing die-bonding film 20 is stretched and spread in the plane direction (see fig. 5B). Thus, the semiconductor wafer W subjected to the half-cut processing is cut under a specific temperature condition. The temperature is, for example, -20 to 5 ℃, preferably-15 to 0 ℃, and more preferably-10 to-5 ℃. The expanded state is released by lowering the jack-up member U (see fig. 5C).
Further, in the expanding step, as shown in fig. 6A to 6B, the dicing tape 10 is stretched under a higher temperature condition (for example, room temperature (23 ℃)) to expand the area. Thus, the cut adjacent semiconductor chips W are separated in the plane direction of the thin film surface, and the interval is further increased.
In the notch maintaining step, as shown in fig. 7, after the dicing tape 10 is thermally shrunk by directing hot air (for example, 100 to 130 ℃) to the dicing tape 10, the dicing tape is cooled and solidified, and the distance (notch) between the cut adjacent semiconductor chips W is maintained.
Here, in the dicing die-bonding film 20 of the present embodiment, the base material 1 includes: a 1 st resin layer 1a containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer 1b laminated on one surface of the 1 st resin layer 1 a; and a 3 rd resin layer 1c laminated on the 2 nd resin layer 1b on the opposite side of the 1 st resin layer 1a, wherein the 2 nd resin layer 1b has a lower tensile storage modulus at room temperature (23 ℃) than the 1 st resin layer 1a and the 3 rd resin layer 1c, and therefore, the notch can be more sufficiently maintained in the notch maintaining step.
In the pickup step, as shown in fig. 8, the semiconductor chip W with the die bonding layer 3 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to lift the semiconductor chip W to be picked up via the dicing tape 10. The semiconductor chip lifted up is held by the suction jig J.
In the die bonding step, the semiconductor chip W with the die bonding layer 3 attached thereto is bonded to an adherend.
In the above-described semiconductor integrated circuit manufacturing, the example in which the dicing die-bonding film 20 is used as the auxiliary tool has been described, but when the dicing tape 10 is used as the auxiliary tool, the semiconductor integrated circuit can be manufactured in the same manner as described above.
The matters disclosed in the present specification include the following matters.
(1)
A dicing tape comprising a base material and an adhesive layer laminated thereon,
the base material includes: a 1 st resin layer containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer laminated on one surface of the 1 st resin layer; and a 3 rd resin layer laminated on the 2 nd resin layer on the opposite side of the 1 st resin layer,
the 2 nd resin layer has a lower tensile storage modulus at room temperature than the 1 st resin layer and the 3 rd resin layer.
According to the above configuration, since the base material includes the 1 st resin layer containing the 1 st resin having a molecular weight dispersion degree of 5 or less, the base material can be cooled and solidified more quickly in the notch maintaining step.
Further, since the tensile storage modulus at room temperature of the 2 nd resin layer laminated on one surface of the 1 st resin layer and the 3 rd resin layer laminated on the opposite side of the 1 st resin layer, that is, the 2 nd resin layer sandwiched by the 1 st resin layer and the 3 rd resin layer is lower than the tensile storage modulus at room temperature of the 1 st resin layer and the 3 rd resin layer, the 2 nd resin layer can be made to function as a stress relaxation layer for relaxing tensile stress. That is, since the tensile stress generated in the base material can be made small, the base material can be made to have an appropriate hardness and be relatively easily stretched.
This makes it possible to more sufficiently maintain the notch in the notch maintaining step.
Further, by making the tensile storage modulus at room temperature of the 2 nd resin layer smaller than the tensile storage modulus at room temperature of the 1 st resin layer and the 3 rd resin layer, the ability to cut a plurality of semiconductor chips from a semiconductor wafer can be improved, and the occurrence of breakage of the base material due to cracking in the expanding step can be suppressed.
In addition, when the 1 st resin contained in the 1 st resin layer and the 2 nd resin contained in the 2 nd resin layer have high affinity, the 1 st resin layer and the 2 nd resin layer can be extrusion-molded well without peeling.
(2)
The dicing tape according to the item (1), wherein the 1 st resin layer and the 3 rd resin layer have a tensile storage modulus at room temperature of 10MPa or more and 100MPa or less, and the 2 nd resin layer has a tensile storage modulus at room temperature of 200MPa or more and 500MPa or less.
According to the above configuration, the base material can be further provided with appropriate hardness and can be easily stretched.
This allows the notch to be further maintained in the notch maintaining step.
Further, the ability to cut a plurality of semiconductor chips from a semiconductor wafer can be further improved, and the occurrence of breakage of the base material due to breakage in the expanding step can be further suppressed.
(3)
The dicing tape according to the above (1) or (2), wherein the 1 st resin has a melting point of 115 ℃ or higher and 130 ℃ or lower.
According to the above configuration, since the 1 st resin has a melting point of 115 ℃ or higher and 130 ℃ or lower, a temperature difference between hot air (for example, 100 to 130 ℃) directed to the dicing tape and the resin constituting the 1 st resin layer can be made small in the notch maintaining step. Therefore, in the notch maintaining step, the base material can be cooled and solidified more quickly.
This makes it possible to more sufficiently maintain the notch in the notch maintaining step.
(4)
The dicing tape according to any one of the above (1) to (3), wherein the melting point difference between the 1 st resin and the 2 nd resin is 0 ℃ or more and 70 ℃ or less.
(5)
The dicing tape according to any one of the above (1) to (4), wherein the difference in melting point between the resin 1 and the resin 2 is 0 ℃ or more and 55 ℃ or less.
According to the above configuration, since the difference in melting point between the 1 st resin and the 2 nd resin can be made small, when the base material is obtained by coextrusion molding, it is possible to suppress excessive heat application to the low-melting-point resin and to suppress the generation of by-products due to thermal deterioration of the low-melting-point resin.
In addition, the following can be suppressed: the viscosity of the low-melting-point resin is excessively lowered, and thus a lamination failure occurs between the 1 st resin layer and the 2 nd resin layer.
Further, when the 3 rd resin layer contains the 1 st resin, the occurrence of a lamination failure between the 3 rd resin layer and the 2 nd resin layer can be suppressed.
(6)
The dicing tape according to any one of the above (1) to (5), wherein the 1 st resin has a mass average molecular weight of 100000 or more and 1000000 or less and a number average molecular weight of 20000 or more and 600000 or less.
(7)
The dicing tape according to any one of the above (1) to (6), wherein the above-mentioned 1 st resin contains a polypropylene resin as a polymerization product obtained by using a metallocene catalyst.
(8)
The dicing tape according to the item (7), wherein the polypropylene resin as a polymerization product obtained by using a metallocene catalyst in the item (1) contains a propylene/α -olefin copolymer as a polymerization product obtained by using a metallocene catalyst.
(9)
The dicing tape according to the item (8), wherein the resin 1 contains a propylene/α -olefin random copolymer as a polymerization product obtained by using a metallocene catalyst, as the propylene/α -olefin copolymer as a polymerization product obtained by using a metallocene catalyst.
(10)
The dicing tape according to the item (9), wherein the propylene/α -olefin random copolymer of the 1 st resin, which is a polymerization product obtained by a metallocene catalyst, includes a propylene/α -olefin random copolymer selected from the group consisting of a propylene/α -olefin random copolymer having 2 carbon atoms, which is a polymerization product obtained by a metallocene catalyst, a propylene/α -olefin random copolymer having 4 carbon atoms, which is a polymerization product obtained by a metallocene catalyst, and a propylene/α -olefin random copolymer having 5 carbon atoms, which is a polymerization product obtained by a metallocene catalyst.
(11)
The dicing tape according to the item (10), wherein the resin 1 contains a propylene/ethylene random copolymer as a polymerization product obtained by a metallocene catalyst as the propylene/α -olefin random copolymer as a polymerization product obtained by a metallocene catalyst.
According to the above configuration, the notch can be more sufficiently maintained in the notch maintaining step.
(12)
The dicing tape according to any one of the above (1) to (11), wherein,
the thickness of the base material is 60 μm or more and 160 μm or less,
the ratio of the thickness of the 1 st resin layer to the thickness of the 2 nd resin layer is 1/4-1/20,
the ratio of the thickness of the 3 rd resin layer to the thickness of the 2 nd resin layer is 1/4-1/20.
(13)
The dicing tape according to any one of the above (1) to (12), wherein,
the 2 nd resin layer contains an α -olefin thermoplastic elastomer.
(14)
The dicing tape according to the item (13), wherein the α -olefin-based thermoplastic elastomer contains at least 1 of a homopolymer of α -olefin or a copolymer of α -olefin.
(15)
The dicing tape according to the item (14), wherein the homopolymer of α -olefin is a homopolymer of α -olefin having 2 to 12 carbon atoms.
(16)
The dicing tape according to the item (15), wherein the homopolymer of α -olefin is selected from the group consisting of ethylene, propylene, 1-butene, and 4-methyl-1-pentene.
(17)
The dicing tape according to the item (14), wherein the α -olefin copolymer is selected from the group consisting of an ethylene/propylene copolymer, an ethylene/1-butene copolymer, an ethylene/propylene/1-butene copolymer, an ethylene/α -olefin copolymer having 5 or more and 12 or less carbon atoms, a propylene/ethylene copolymer, a propylene/1-butene copolymer, and a propylene/α -olefin copolymer having 5 or more and 12 or less carbon atoms.
According to the above configuration, the notch can be more sufficiently maintained in the notch maintaining step.
In addition, when the cutting process is expanded, the cutting performance from the semiconductor wafer to the plurality of semiconductor chips can be further improved.
(18)
The dicing tape according to any one of the above (1) to (17), wherein the 3 rd resin layer contains the 1 st resin.
According to the above configuration, the dicing tape can be efficiently manufactured, and the semiconductor wafer bonded to the dicing tape can be efficiently cut.
(19)
A dicing die-bonding film comprising:
the dicing tape of any one of the above (1) to (18), and
and a chip bonding layer laminated on the adhesive layer of the dicing tape.
According to the above configuration, the notch can be more sufficiently maintained in the notch maintaining step.
The dicing tape and the dicing die-bonding film of the present invention are not limited to the above embodiments. The dicing tape and the dicing die-bonding film of the present invention are not limited to the above-described effects. The dicing tape and the dicing die-bonding film of the present invention can be variously modified within a range not departing from the gist of the present invention.
Examples
The present invention will be described in more detail with reference to examples. The following examples are intended to illustrate the present invention in further detail, and are not intended to limit the scope of the present invention.
[ example 1]
< formation of substrate >
A substrate having a 3-layer structure of a layer a/a layer B/a layer C (a 3-layer structure having a layer B as a center layer and a layer a and a layer C as outer layers laminated on both sides of the layer B) was molded using a 2-type 3-layer extrusion T-die molding machine. As the resins for the A and C layers, metallocene PP (trade name: WINTEC WXK1233, manufactured by Japan Polypropylene corporation) was used, and as the resin for the B layer, EVA (trade name: Evaflex EV250, Mitsui DuPont Polychemical Co., Ltd., manufactured by Ltd.) was used.
The above extrusion molding was carried out at a die temperature of 190 ℃. That is, the A, B, and C layers were extrusion molded at 190 ℃. The thickness of the substrate obtained by extrusion molding was 100 μm. The thickness ratio (layer thickness ratio) of the a layer, the B layer, and the C layer is defined as a layer: layer B: layer C is 1: 10: 1.
after the molded base material is sufficiently cured, the cured base material is wound into a roll shape to produce a roll-like body.
The coextrusion formability of the base material was good.
< making of dicing tape >
The adhesive composition was applied to one surface of the substrate from a rolled substrate using an applicator in such a manner that the thickness reached 10 μm. The base material coated with the adhesive composition was dried by heating at 110 ℃ for 3 minutes to form an adhesive layer, thereby obtaining a dicing tape.
The above adhesive composition was prepared as follows.
First, 173 parts by mass of INA (isononyl acrylate), 54.5 parts by mass of HEA (hydroxyethyl acrylate), 0.46 part by mass of AIBN (2, 2' -azobisisobutyronitrile), and 372 parts by mass of ethyl acetate were mixed to obtain a 1 st resin composition.
Then, the resin composition 1 was charged into a separable round-bottom flask (capacity: 1L), equipped with a separable round-bottom flask, a thermometer, a nitrogen gas inlet tube, and a stirring blade, in a polymerization experimental apparatus, and the liquid temperature of the resin composition 1 was brought to normal temperature (23 ℃ C.) while stirring the resin composition 1, and the inside of the separable round-bottom flask was replaced with nitrogen gas for 6 hours.
Then, while nitrogen gas was introduced into the separable round-bottomed flask, the liquid temperature of the first resin composition 1 was maintained at 62 ℃ for 3 hours while stirring the first resin composition 1, and thereafter, the liquid temperature was maintained at 75 ℃ for 2 hours, whereby the INA, the HEA, and the AIBN were polymerized to obtain a second resin composition 2. Thereafter, the inflow of nitrogen gas into the round-bottomed separable flask was stopped.
After the resin composition No. 2 was cooled to a liquid temperature of room temperature, 52.5 parts by mass of 2-isocyanatoethyl methacrylate (product name "Karenz MOI (registered trademark)") as a compound having a polymerizable carbon-carbon double bond and 0.26 part by mass of dibutyltin dilaurate IV (Wako pure chemical industries, Ltd.) were added to the resin composition No. 2 to obtain a resin composition No. 3, and the resin composition No. 3 thus obtained was stirred at a liquid temperature of 50 ℃ for 24 hours in an atmospheric atmosphere.
Then, after adding 0.75 parts by mass of CORONATE L (isocyanate compound) and 2 parts by mass of Omnirad127 (photopolymerization initiator) to 100 parts by mass of the solid polymer component, the 3 rd resin composition was diluted with ethyl acetate until the solid content concentration reached 20% by mass, to prepare an adhesive composition.
< making of dicing die-bonding film >
100 parts by mass of an acrylic resin (tradename "SG-P3" manufactured by Citsubishi chemical Co., Ltd., glass transition temperature 12 ℃), 46 parts by mass of an epoxy resin (tradename "JER 1001" manufactured by Mitsubishi chemical Co., Ltd.), 51 parts by mass of a phenol resin (tradename "MEH-7851 ss" manufactured by Ming and Kasei Co., Ltd.), 191 parts by mass of spherical silica (tradename "SO-25R" manufactured by Admatech Co., Ltd.), and 0.6 part by mass of a curing catalyst (tradename "CURIZOL PHZ" manufactured by Sitsubishi chemical industries Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a die-bonding composition having a solid content of 20 mass%.
Then, the die-bonding composition was applied to the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner using an applicator so as to have a thickness of 10 μm, and dried at 130 ℃ for 2 minutes to remove the solvent from the die-bonding composition, thereby obtaining a die-bonding sheet in which a die-bonding layer was laminated on the release liner.
Then, one side of the die bonding sheet on which the release sheet is not laminated is bonded to the adhesive layer of the dicing tape, and then the release liner is peeled from the die bonding layer, thereby obtaining a dicing die bonding film having a die bonding layer.
The dicing die-bonding film obtained as described above was evaluated for the cuttability (hereinafter referred to as cuttability) of the wafer and the die-bonding layer, the floating of the die-bonding layer from the dicing tape (hereinafter referred to as floating of the die-bonding layer), and the maintenance of the notch as described below.
(evaluation of cuttability)
A bare wafer (300 mm in diameter) and a dicing ring were attached to the dicing die-bonding film of example 1. Thereafter, the bare wafer and the die bonding layer were cut using a die separating apparatus DDS230 (manufactured by DISCO corporation), and the cutting performance was evaluated.
The bare wafer is cut into bare chips having a size of 3.2mm in length, 1.4mm in width, and 0.025mm in thickness.
Specifically, the cuttability was evaluated as follows.
First, the bare wafer and the die bonding layer were cut by a cold expanding unit under conditions of an expansion temperature of-5 ℃, an expansion rate of 100 mm/sec, and an expansion amount of 14mm, to obtain a semiconductor chip with a die bonding layer.
Then, room-temperature expansion was carried out at room temperature under conditions of an expansion rate of 1 mm/sec and an expansion amount of 10 mm. Then, while maintaining the expanded state, the dicing die bonding film at the boundary portion with the outer edge of the bare wafer was thermally shrunk at a heating temperature of 200 ℃, a heating distance of 18mm, and a rotation speed of 5 °/second.
Then, the cut portion of the semiconductor chip with the chip bonding layer was observed by microscope observation, and the cutting rate was calculated. Thereafter, the evaluation was evaluated as good when the cut rate was 90% or more, and the evaluation was evaluated as poor when the cut rate was less than 90%.
(evaluation of lifting of chip bonding layer)
A bare wafer (300 mm in diameter) and a dicing ring were attached to the dicing die-bonding film of example 1. Thereafter, the bare wafer and the chip bonding layer were cut using a chip separation device DDS230 (manufactured by DISCO corporation), and the lift-off of the cut chip bonding layer was evaluated.
The bare wafer was cut into bare chips having a size of 12mm in length, 4mm in width, and 0.055mm in thickness.
As the bare wafer, a warped wafer is used.
Warped wafers were fabricated as follows.
First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warpage-adjusting composition having a solid content concentration of 20 mass%.
(a) Acrylic resin (tradename "SG-70L", tradename of tradename, tradename: 5 parts by mass
(b) Epoxy resin (product name "JER 828" manufactured by Mitsubishi chemical corporation): 5 parts by mass
(c) Phenol resin (product name "LDR 8210" manufactured by minko chemical industries, Ltd.): 14 parts by mass
(d) Epoxy resin (trade name "MEH-8005", manufactured by Mitsubishi chemical corporation): 2 parts by mass
(e) Spherical silica (product name "SO-25R" manufactured by Admatechs Co.): 53 parts by mass
(f) Phosphorus-based catalyst (TPP-K): 1 part by mass
Then, the warpage-adjusting composition was applied to the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner with a thickness of 25 μm using an applicator, and dried at 130 ℃ for 2 minutes to remove the solvent from the warpage-adjusting composition, thereby obtaining a warpage-adjusting sheet in which a warpage-adjusting layer was laminated on the release liner.
Then, a bare wafer was attached to the side of the warpage-adjusting sheet on which the release liner was not laminated by using a laminator (model MRK-600, manufactured by MCK) under conditions of 60 ℃, 0.1MPa and 10mm/s, and the resultant was placed in an oven and heated at 175 ℃ for 1 hour to thermally cure the resin of the warpage-adjusting layer, whereby the warpage-adjusting layer was shrunk to obtain a warped bare wafer.
After shrinking the warpage-adjusting layer, a tape for wafer processing (product name "V-12 SR 2" manufactured by hitto electrical corporation) was attached to the warped bare wafer on the side where the warpage-adjusting layer was not laminated, and then the dicing ring was fixed to the warped bare wafer via the tape for wafer processing. Then, the warpage adjusting layer is removed from the warped bare wafer.
Grooves having a depth of 100 μm from the entire surface (hereinafter referred to as one surface) of the warped bare wafer from which the warpage adjusting layer has been removed are formed in a lattice shape (width 20 μm) using a dicing apparatus (model 6361, manufactured by DISCO corporation).
Then, a back-grinding tape is attached to one surface of the warped bare wafer, and the wafer-processing tape is removed from the other surface (the surface opposite to the one surface) of the warped bare wafer.
Then, the warped bare wafer was ground from the other surface side by using a back grinder (model DGP8760, manufactured by DISCO corporation) until the thickness of the warped bare wafer reached 55 μm (0.055mm), and the obtained wafer was regarded as a warped wafer.
Specifically, the floating of the chip bonding layer was evaluated as follows.
The area of the portion of the chip bonding layer floating from the dicing tape (the ratio of the area of the chip bonding layer floating when the entire area of the chip bonding layer is 100%) was observed with a microscope, and the floating area of the chip bonding layer was calculated. Then, the floating area of the chip bonding layer was evaluated as good when it was less than 30%, and evaluated as good when it was 30% or more.
(evaluation of incision Retention)
A bare wafer (300 mm in diameter) and a dicing ring were attached to the dicing die-bonding film of example 1. Thereafter, the bare wafer and the die bonding layer were cut using a die separating apparatus DDS230 (manufactured by DISCO corporation), and the notch retentivity after the cutting was evaluated.
The bare wafer was cut into bare chips having a size of 12mm in length, 4mm in width, and 0.055mm in thickness.
Note that, as the bare wafer, a warped wafer is used. The warped wafer is fabricated by performing the same operation as described above.
Specifically, the incision maintenance was evaluated as follows.
First, the semiconductor wafer and the chip bonding layer were cut by a cold spreading means under conditions of a spreading temperature of-5 ℃, a spreading rate of 100 mm/sec, and a spreading amount of 12mm, to obtain a plurality of semiconductor chips with chip bonding layers. After the cutting, the intervals between the warped chips with the chip bonding layers (hereinafter referred to as chip intervals after the cutting) were measured by microscopic observation. The intervals between the plurality of warped chips with the chip bonding layer were determined by measuring the intervals between arbitrary 10 points and performing arithmetic mean.
Then, room-temperature expansion was carried out at room temperature under conditions of an expansion rate of 1 mm/sec and an expansion amount of 5 mm. Then, while maintaining the expanded state, the dicing die-bonding film at the boundary portion with the outer edge of the semiconductor wafer was thermally shrunk at a heating temperature of 200 ℃, a heating distance of 18mm, and a rotation speed of 5 °/second. After the heat shrinkage, the intervals between the plurality of semiconductor chips with the chip bonding layer (hereinafter referred to as post-heat shrinkage chip intervals) were measured by microscopic observation. The intervals between a plurality of semiconductor chips with a chip bonding layer were determined by measuring the intervals between arbitrary 10 points and performing arithmetic mean.
The reduction ratio of the chip spacing after thermal shrinkage with respect to the chip spacing after cutting was then calculated. Then, the evaluation was evaluated as good when the reduction ratio was less than 10%, and the evaluation was evaluated as poor when the reduction ratio was 10% or more.
(measurement of melting Point)
The melting points were measured for WINTEC WXK1233 as the resin of the a layer and the C layer, and Evaflex EV250 as the resin of the B layer. The measured melting points are shown in table 1 below.
The melting point was measured under the following conditions.
That is, the temperature was raised to 200 ℃ at a temperature rise rate of 5 ℃ per minute under a nitrogen gas flow using a differential scanning calorimeter apparatus (model DSC Q2000 manufactured by TA INSTRUMENTS Co., Ltd.), and the peak temperature of the endothermic peak was obtained and measured.
(measurement of number average molecular weight, Mass average molecular weight, and molecular weight Dispersion)
The number average molecular weight and the mass average molecular weight of WINTEC WXK1233 as the resin of the a layer and the C layer were measured under the following conditions.
Further, the molecular weight dispersion (mass average molecular weight/number average molecular weight) of WINTEC WXK1233 was obtained from the number average molecular weight and the mass average molecular weight measured under the following conditions.
The measurement device: model number "Alliance GPC 2000 type" manufactured by Waster corporation "
Column: 2 TSkgel GMH6-HT (manufactured by Tosoh corporation) were connected in series, and further 2 TSkgel GMH-HTL were connected in series on the downstream side
Column size: TSKgel GMH6-HT and TSKgel GMH-HTL are both 7.5mm in inside diameter x 300mm in length
Column temperature: 140 deg.C
Flow rate: 1.0 mL/min
Eluent: ortho-dichlorobenzene
Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene)
Sample injection amount: 40 μ L
The detector: RI (differential refractometer)
Standard sample: polystyrene
[ example 2]
A dicing die-bonding film of example 2 was obtained in the same manner as in example 1 except that the base material was 80 μm. The coextrusion formability of the base material was good.
The dicing die-bonding film of example 2 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
[ example 3]
A dicing die-bonding film of example 3 was obtained in the same manner as in example 1 except that the base material was 150 μm. The coextrusion formability of the base material was good.
The dicing die-bonding film of example 3 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
[ example 4]
A dicing die-bonding film of example 4 was obtained in the same manner as in example 1 except that Evaflex EV550 (manufactured by Mitsui DuPont polymeric co., ltd.) was used as the resin constituting the B layer (center layer) of the base material, and 80 μm was used as the base material. The coextrusion formability of the base material was good.
The dicing die-bonding film of example 4 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
Further, as for Evaflex EV550, the melting point was measured in the same manner as in example 1. The measured melting points are shown in table 1 below.
[ example 5]
A dicing die-bonding film of example 5 was obtained in the same manner as in example 1 except that the resin of the layer B was an acrylic elastomer (trade name: Vistamaxx3980, product of ExxonMobil Chemical company). The coextrusion formability of the base material was good.
The dicing die-bonding film of example 5 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
Further, Vistamaxx3980 was measured for melting point in the same manner as in example 1. The measured melting points are shown in table 1 below.
[ example 6]
The thickness of the substrate was set to 80 μm, and the layer thickness ratio of the substrate was set to layer a: layer B: layer C is 1: 4: except for this, a dicing die-bonding film of example 6 was obtained in the same manner as in example 1. The coextrusion formability of the base material was good.
The dicing die-bonding film of example 6 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
[ example 7]
The thickness of the substrate was set to 80 μm, and the layer thickness ratio of the substrate was set to layer a: layer B: layer C is 1: 20: except for this, a dicing die-bonding film of example 7 was obtained in the same manner as in example 1. The coextrusion formability of the base material was good.
The dicing die-bonding film of example 7 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
[ example 8]
A dicing die-bonding film of example 8 was obtained in the same manner as in example 1 except that the metallocene PP constituting the a layer and the C layer (outer layer) of the substrate was WINTEC WMX03 (manufactured by japan polypropylene corporation). The coextrusion formability of the base material was good.
The dicing die-bonding film of example 8 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
Comparative example 1
A dicing die-bonding film of comparative example 1 was obtained in the same manner as in example 1 except that the resin constituting the A layer and the C layer (outer layer) of the substrate was nonmetallocene random PP (trade name: NOVATEC PP EG7FT, manufactured by Nippon polypropylene Co., Ltd.). The coextrusion formability of the base material was poor.
The dicing die-bonding film of comparative example 1 was evaluated for the cuttability, the lifting of the die-bonding layer, and the notch retentivity in the same manner as in example 1.
Further, for NOVATEC PP EG7FT, the melting point was measured in the same manner as in example 1. The measured melting points are shown in table 1 below.
Comparative example 2
A dicing die-bonding film of comparative example 2 was obtained in the same manner as in example 1 except that the resin constituting the A layer and the C layer (outer layer) of the base material was non-metallocene low-density polyethylene (trade name: NOVATEC LC720, manufactured by NOVATEC Co., Ltd.). The coextrusion formability of the base material was good.
The dicing die-bonding film of comparative example 2 was evaluated for cuttability, lifting of the die-bonding layer, and notch retentivity in the same manner as in example 1.
Further, for NOVATEC LC720, the melting point was measured in the same manner as in example 1. The measured melting points are shown in table 1 below.
Comparative example 3
A dicing die-bonding film of comparative example 3 was obtained in the same manner as in example 1, except that Evaflex EV250 was used as the resin constituting the a layer and the C layer (outer layer) of the base material. The coextrusion formability of the base material was good.
The dicing die-bonding film of comparative example 3 was evaluated for cuttability, lifting of the die-bonding layer, and notch retentivity in the same manner as in example 1.
Comparative example 4
A dicing die-bonding film of comparative example 4 was obtained in the same manner as in example 1, except that Vistamaxx3980 was used as the resin constituting the layer a, the layer B, and the layer C of the base material. The coextrusion formability of the base material was good.
The dicing die-bonding film of comparative example 4 was evaluated for cuttability, lifting of the die-bonding layer, and notch retentivity in the same manner as in example 1.
Comparative example 5
A dicing die-bonding film of comparative example 5 was obtained in the same manner as in example 1, except that WINTEC WXK1233 was used as the resin constituting the B layer of the base material. The coextrusion formability of the base material was good.
The dicing die-bonding film of comparative example 5 was evaluated for cuttability, lifting of the die-bonding layer, and notch retentivity in the same manner as in example 1.
The dicing die-bonding films of the respective examples were evaluated for coextrudability and cuttability of the base material, and lifting and notch retentivity of the die-bonding layer, and the results are shown in table 1 below.
[ TABLE 1]
As is clear from table 1, the dicing die-bonding films of examples 1 to 8 had good coextrusion formability of the base material, excellent cuttability, suppressed lifting of the die-bonding layer, and good notch retention property.
In contrast, it is known that: the dicing die-bonding film of comparative example 1 was excellent in cuttability and could suppress lifting of the die-bonding layer, but the coextrusion property of the base material was poor and the notch could not be sufficiently maintained.
It is also found that the dicing die-bonding film of comparative example 2 has good coextrusion formability of the base material, excellent cuttability, and can suppress lifting of the die-bonding layer, but the notch cannot be sufficiently maintained.
It is also found that the dicing die-bonding films of comparative examples 3 and 4 have good coextrusion formability of the base material and excellent cuttability, but the lifting of the die-bonding layer cannot be sufficiently suppressed, and the notch cannot be sufficiently maintained.
It is also found that the dicing die-bonding film of comparative example 5 has good coextrusion formability of the base material, but has poor cutting performance, and thus the lifting of the die-bonding layer cannot be sufficiently suppressed, and the notch cannot be sufficiently maintained.
Although the results shown in table 1 relate to dicing the die-bonding film, it is expected that the dicing tape included in the dicing die-bonding film can also obtain the same results as those shown in table 1.
Claims (8)
1. A dicing tape comprising a base material and an adhesive layer laminated thereon,
the base material is provided with: a 1 st resin layer containing a 1 st resin having a molecular weight dispersion of 5 or less; a 2 nd resin layer laminated on one surface of the 1 st resin layer; and a 3 rd resin layer laminated on the 2 nd resin layer on the opposite side of the 1 st resin layer,
the 2 nd resin layer has a lower tensile storage modulus at room temperature than the 1 st and 3 rd resin layers.
2. The dicing tape according to claim 1, wherein the 1 st resin has a melting point of 115 ℃ or more and 130 ℃ or less.
3. The dicing tape according to claim 1 or 2, wherein the 1 st resin has a mass average molecular weight of 100000 or more and 1000000 or less and a number average molecular weight of 20000 or more and 600000 or less.
4. The dicing tape according to claim 1 or 2, wherein the 1 st resin comprises a polypropylene resin as a polymerization product obtained by using a metallocene catalyst.
5. The dicing tape according to claim 1 or 2, wherein the thickness of the base material is 60 μm or more and 160 μm or less,
the ratio of the thickness of the 1 st resin layer to the thickness of the 2 nd resin layer is in the range of 1/4 to 1/20,
the ratio of the thickness of the 3 rd resin layer to the thickness of the 2 nd resin layer is in the range of 1/4-1/20.
6. The dicing tape according to claim 1 or 2, wherein the 2 nd resin layer comprises an α -olefin-based thermoplastic elastomer.
7. The dicing tape according to claim 6, wherein the α -olefin-based thermoplastic elastomer comprises at least 1 of a homopolymer of an α -olefin or a copolymer of an α -olefin.
8. A dicing die-bonding film comprising:
the dicing tape of any one of claims 1 to 7, and
a chip bonding layer laminated on the adhesive layer of the dicing tape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-110199 | 2019-06-13 | ||
| JP2019110199 | 2019-06-13 |
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| CN112080217A true CN112080217A (en) | 2020-12-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010495568.0A Pending CN112080217A (en) | 2019-06-13 | 2020-06-03 | Dicing tape and dicing die-bonding film |
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| Country | Link |
|---|---|
| JP (1) | JP2020205414A (en) |
| KR (1) | KR20200143258A (en) |
| CN (1) | CN112080217A (en) |
| TW (1) | TW202111056A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011216704A (en) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | Adhesive tape for semiconductor wafer processing |
| CN102399506A (en) * | 2010-09-16 | 2012-04-04 | 日东电工株式会社 | Pressure-sensitive adhesive tape |
| JP5117629B1 (en) * | 2012-06-28 | 2013-01-16 | 古河電気工業株式会社 | Adhesive tape for wafer processing |
| CN103289586A (en) * | 2012-02-27 | 2013-09-11 | 日东电工株式会社 | Adhesive sheet for cutting |
| JP2016089138A (en) * | 2014-11-11 | 2016-05-23 | ダイヤプラスフィルム株式会社 | Substrate film used in adhesive film for semiconductor manufacturing process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016152919A1 (en) | 2015-03-24 | 2016-09-29 | 古河電気工業株式会社 | Semiconductor processing tape |
-
2020
- 2020-06-02 KR KR1020200066192A patent/KR20200143258A/en active Search and Examination
- 2020-06-03 CN CN202010495568.0A patent/CN112080217A/en active Pending
- 2020-06-05 TW TW109118933A patent/TW202111056A/en unknown
- 2020-06-09 JP JP2020100018A patent/JP2020205414A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011216704A (en) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | Adhesive tape for semiconductor wafer processing |
| CN102399506A (en) * | 2010-09-16 | 2012-04-04 | 日东电工株式会社 | Pressure-sensitive adhesive tape |
| CN103289586A (en) * | 2012-02-27 | 2013-09-11 | 日东电工株式会社 | Adhesive sheet for cutting |
| JP5117629B1 (en) * | 2012-06-28 | 2013-01-16 | 古河電気工業株式会社 | Adhesive tape for wafer processing |
| JP2016089138A (en) * | 2014-11-11 | 2016-05-23 | ダイヤプラスフィルム株式会社 | Substrate film used in adhesive film for semiconductor manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020205414A (en) | 2020-12-24 |
| KR20200143258A (en) | 2020-12-23 |
| TW202111056A (en) | 2021-03-16 |
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