CN118256167A

CN118256167A - Cutting belt

Info

Publication number: CN118256167A
Application number: CN202311801665.8A
Authority: CN
Inventors: 木村雄大; 畠山义治; 入江瞳
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2022-12-28
Filing date: 2023-12-26
Publication date: 2024-06-28

Abstract

The invention provides a dicing tape capable of sufficiently eliminating adhesion between adjacent die bonding layers adhered together in a process of performing both a die bonding process and an expanding process by using a die bonding device. The dicing tape according to the present invention comprises a substrate and an adhesive layer laminated on the substrate, and is characterized in that the dicing tape is alternately and repeatedly stretched in the plane direction at a speed of 500mm/min until reaching a length of 180% of the original length, and the dicing tape after stretching is recovered, and that the value of the tensile stress measured at the 3 rd stretching is 7N/10mm or more.

Description

Cutting belt

Technical Field

The present invention relates to a dicing tape.

Background

Conventionally, in the manufacture of semiconductor devices, it has been known to use dicing die bonding films in order to obtain semiconductor chips for die bonding.

The dicing die-bonding film includes a dicing tape having an adhesive layer laminated on a substrate, and a die-bonding layer that is laminated on the adhesive layer of the dicing tape so as to be capable of being peeled off.

As a method for obtaining a semiconductor chip (die) for die bonding by using the dicing die bonding film, patent document 1 below describes a method comprising: a half-dicing step of forming grooves in a semiconductor wafer in order to process the semiconductor wafer into chips (dice) by dicing; a back grinding step of grinding the semiconductor wafer after the half-dicing step to reduce the thickness; a mounting step of adhering one surface (for example, a surface opposite to the circuit surface) of the semiconductor wafer after the back grinding step to the die bonding layer, thereby fixing the semiconductor wafer to the dicing tape; an expanding step of expanding the interval between the semiconductor chips subjected to the half-dicing process; a notch maintaining step of maintaining a spacing between the semiconductor chips; a pick-up step of peeling off the die bonding layer from the adhesive layer and taking out the semiconductor chip in a state where the die bonding layer is adhered; and a die bonding step of bonding the semiconductor chip in a state where the die bonding layer is bonded to an adherend (for example, a mounting substrate or the like).

Patent document 1 below describes that: the expansion step is to cut the die bonding layer bonded to one surface of the semiconductor wafer into a size corresponding to the size of the semiconductor chips to obtain a plurality of semiconductor chips each having the die bonding layer, and to perform the first expansion step at a low temperature of-20 to 5 ℃ in order to separate the intervals between the adjacent semiconductor chips each having the die bonding layer, and then to further widen the intervals between the adjacent semiconductor chips each having the die bonding layer, and to perform the second expansion step at a higher temperature (for example, at room temperature (23 ℃)).

Patent document 1 also describes that: in the dicing step, the dicing tape is heated (for example, 100 to 130 ℃) by blowing hot air thereto, and the dicing tape is thermally shrunk (heat-shrunk) and then cooled and solidified, so that the distance (dicing) between the adjacent semiconductor chips having the die bonding layer is maintained.

In the method for obtaining a semiconductor chip (die) as described above, the expansion step and the heat shrinkage step are generally performed by an expansion device (expander), and the pickup step and the die bonding step are generally performed by a die bonding device (die bonder).

Prior art literature

Patent literature

Patent document 1: japanese patent application laid-open No. 2021-77753

Disclosure of Invention

Problems to be solved by the invention

However, in the method of obtaining a semiconductor chip (die), the heat shrinkage step after the expansion step may be omitted in addition to the first expansion step and the second expansion step as the expansion step.

In this case, the second expansion step may be performed before the pickup step and the die bonding step in the die bonding apparatus, instead of the expansion device (without using the expansion device).

As described above, when both the second expansion step and the die bonding step are performed by the die bonding apparatus, in the die bonding step, a part of the semiconductor chips with the die bonding layer may be die bonded without performing die bonding of all the plurality of semiconductor chips with the die bonding layer obtained in the second expansion step at one time.

In this case, the dicing die-bonding film having the remaining semiconductor chips with the die-bonding layers is temporarily taken out from the die-bonding device.

The dicing die bonding film taken out from the die bonding apparatus in a state of having the remaining semiconductor chips with the die bonding layers is temporarily stored.

However, in this storage, the dicing die bonding film may adhere to each other because the space between adjacent semiconductor chips having the die bonding layer is narrow.

The dicing die bonding film is attached again to the die bonding device in a state stretched in the planar direction when the remaining semiconductor chips with the die bonding layer are die bonded. On the other hand, as described above, if adjacent die bonding layers are adhered to each other, adhesion between the adjacent die bonding layers may not be sufficiently eliminated after stretching in the plane direction.

In this way, if the adhesion between the adjacent die bonding layers cannot be sufficiently eliminated, it is difficult to pick up the semiconductor chips each having the die bonding layer in the above-described pick-up step, which is not preferable.

However, in the process of performing both the die bonding process and the expanding process using the die bonding apparatus, it is difficult to say that sufficient researches have been made with respect to sufficiently eliminating the adhesion of adjacent die bonding layers that are stuck together.

Accordingly, an object of the present invention is to provide a dicing tape capable of sufficiently eliminating adhesion between adjacent die bonding layers that are stuck together in a process of performing both a die bonding process and an expanding process by a die bonding apparatus.

Solution for solving the problem

The inventors of the present invention have found that, when they conducted intensive studies: when the dicing tape provided in the dicing die-bonding film is subjected to the operations of stretching the dicing tape in the plane direction to a length of 180% of the original length at a speed of 500mm/min and recovering the stretched dicing tape, and the dicing tape is alternately repeated 3 times, the adhesion between adjacent die-bonding layers to be bonded can be sufficiently eliminated in the process of performing both the die-bonding step and the expansion step by the die-bonding apparatus by setting the value of the tensile stress measured at the 3 rd stretching to 7N/10mm or more.

And, the present invention has been conceived.

That is, in the dicing tape according to the present invention, when the operation of stretching the dicing tape in the plane direction to a length of 180% of the original length at a speed of 500mm/min and the operation of recovering the stretched dicing tape are alternately repeated 3 times, the value of the tensile stress measured at the 3 rd stretching is 7N/10mm or more.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, in a process of performing both the die bonding process and the expanding process by using the die bonding apparatus, adhesion between adjacent die bonding layers that are stuck together can be sufficiently eliminated.

Drawings

Fig. 1 is a cross-sectional view showing a structure of a dicing tape according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a structure of a dicing die bonding film according to an embodiment of the present invention.

Fig. 3A is a cross-sectional view schematically showing a case of half-cut processing in a manufacturing method of a semiconductor integrated circuit.

Fig. 3B is a cross-sectional view schematically showing a case of half-cut processing in the manufacturing method of the semiconductor integrated circuit.

Fig. 3C is a cross-sectional view schematically showing a case of back grinding processing in the manufacturing method of the semiconductor integrated circuit.

Fig. 3D is a cross-sectional view schematically showing a case of back grinding processing in the manufacturing method of the semiconductor integrated circuit.

Fig. 4A is a cross-sectional view schematically showing a case of a mounting process in a manufacturing method of a semiconductor integrated circuit.

Fig. 4B is a cross-sectional view schematically showing a case of a mounting process in the manufacturing method of the semiconductor integrated circuit.

Fig. 5A is a cross-sectional view schematically showing a case of an expansion process in a manufacturing method of a semiconductor integrated circuit.

Fig. 5B is a cross-sectional view schematically showing a case of an expansion process in the manufacturing method of the semiconductor integrated circuit.

Fig. 5C is a cross-sectional view schematically showing a case of an expansion process in the manufacturing method of the semiconductor integrated circuit.

Fig. 6 is a cross-sectional view schematically showing a case of a pick-up process in a manufacturing method of a semiconductor integrated circuit.

Description of the reference numerals

1. Substrate material

2. Adhesive layer

3. Chip bonding layer

10. Cutting belt

20. Dicing die bonding film

G back grinding belt

H-holding tool

J adsorption tool

T-wafer processing belt

U jack-up component

W semiconductor wafer

Detailed Description

An embodiment of the present invention will be described below.

[ Cutting tape ]

As shown in fig. 1, the dicing tape 10 according to the present embodiment includes a base material 1 and an adhesive layer 2 laminated on the base material 1.

The dicing tape 10 according to the present embodiment is formed as a sheet-like plate-like body, for example.

The dicing tape 10 according to the present embodiment is stored in a roll form, for example.

When the dicing tape 10 according to the present embodiment is alternately repeated 3 times with the operation of stretching the dicing tape 10 in the plane direction at a speed of 500min/min to a length of 180% of the original length and the operation of recovering the stretched dicing tape 10, the value TS ₃ of the tensile stress measured at the 3 rd stretching is 7N/10mm or more.

The tensile stress value TS ₃ is more preferably 8N/10mm or more, and still more preferably 9N/10mm or more.

The upper limit of the tensile stress value TS ₃ is usually 30N/10mm.

As will be described later, when the adhesive layer 2 contains a curing component that is cured by irradiation with active energy rays, the dicing tape 10 according to the present embodiment preferably satisfies the above numerical range in terms of the value TS ₃ of the tensile stress measured at the time of the 3 rd stretching before and after the irradiation with active energy rays.

The active energy rays are preferably irradiated to a degree that the curing component contained in the adhesive layer 2 is sufficiently cured.

Further, the value TS ₃ of the tensile stress preferably satisfies the above-described numerical range in at least one direction among the plane directions, and more preferably satisfies the above-described numerical range in one direction among the plane directions and in a direction orthogonal to the one direction.

In the case where the base material 1 is a stretched film, one of the directions of the surface is preferably aligned with the stretching direction of the base material 1.

The values of tensile stress TS ₁ and TS ₂ described later are also similar, and the values of tensile storage modulus TSE ₁、TSE₂ and TSE ₃ described later are also similar.

In the dicing tape 10 according to the present embodiment, since the value of the tensile stress TS ₃ is within the above range, the dicing tape 10 can be prevented from being excessively contracted when the stretching is released after the stretching is performed in the plane direction.

Therefore, when the dicing die bonding film 20 provided with the dicing tape 10 as shown in fig. 2 is used, the dicing die bonding film 20 is stretched in the plane direction to singulate the semiconductor wafer bonded to the die bonding layer 3 into a plurality of semiconductor chips with the die bonding layer 3, and then the stretching is released, it is possible to suppress the interval between adjacent semiconductor chips with the die bonding layer 3 from becoming excessively narrow.

As a result, the adjacent semiconductor chips with the die bonding layers 3 can be prevented from excessively adhering to each other.

Further, by setting the value of the tensile stress TS ₃ to be within the above range, a sufficient tensile force can be transmitted to the dicing tape 10.

Therefore, when the dicing die bonding film 20 including the dicing tape 10 is used to singulate the semiconductor wafer bonded to the die bonding layer 3 into a plurality of semiconductor chips having the die bonding layer 3, the adhesion can be sufficiently released even when the adjacent die bonding layers 3 are bonded to each other.

That is, the die bonding layer 3 can be sufficiently cut and singulated.

When the base material 1 is formed of a resin film, the value TS ₃ of the stretching tension can be adjusted by appropriately adjusting the stretching ratio when the resin film is stretched and molded or by appropriately adjusting the tension when the resin film is stretched.

In addition, when the base material 1 is made of 1 resin film, the tensile strength TS ₃ can be adjusted by appropriately adjusting the thickness of the 1 resin film. When the base material 1 is configured as a laminate of a plurality of resin films, the value TS ₃ of the stretching tension can be adjusted by appropriately adjusting the thickness ratio of each resin film.

Further, by appropriately adjusting the resin composition in the resin composition for producing 1 or more kinds of resin films constituting the base material 1, the value TS ₃ of the stretching tension can also be adjusted. The tensile tension value TS ₃ can also be adjusted by adding an additive such as a plasticizer to the resin composition.

Further, by forming the base material 1 as a resin film having a laminated structure of an elastomer layer and a non-elastomer layer, which will be described later, the value TS ₃ of the tensile stress can be adjusted.

Further, in the case of molding a resin film using an extrusion molding machine, the value TS ₃ of the stretching tension can be adjusted by appropriately adjusting the extrusion temperature of the die or the cooling rate at which the resin extruded from the die into a film shape is cooled and solidified.

The values TS ₁ and TS ₂ of the tensile stress measured at the 1 st and 2 nd stretching described later may be adjusted in the same manner as described above.

The operation of stretching the dicing tape 10 in the plane direction and the operation of recovering the stretched dicing tape 10 are alternately repeated 3 times, and can be performed as follows.

(1) Test pieces of dicing tape having a planar dimension of 100mm in length by 10mm in width were prepared.

(2) The test piece of the dicing tape was mounted on a tensile testing machine (for example, trade name "AGS-X" manufactured by shimadzu corporation) having a pair of jigs. Specifically, the distance between the jigs was set to 50mm, and both ends of the test piece of the dicing tape in the longitudinal direction were attached to the pair of jigs.

(3) The test piece of the dicing tape was stretched in the longitudinal direction at a stretching speed of 500mm/min until the length became 180% (a length 80% greater than the original length), and the test piece was kept for 10 minutes.

(4) The test piece of the dicing tape was removed from the pair of jigs and left for one day.

(5) The length of the test piece of the dicing tape after one day of standing was measured.

(6) Repeating the above steps (1) to (5) 3 times in total. In the case of carrying out the above (1) to (5) at the 2 nd and later times, the value obtained by adding the length of the test piece extension of the dicing tape to 50mm was used as the inter-jig distance.

Here, the value TS ₃ of the tensile stress measured at the 3 rd stretching means: and (3) a value of the test force measured in the step (3) by the tensile tester when the steps (1) to (5) are performed for the 3 rd time.

In the dicing tape 10 according to the present embodiment, when the stretching and the recovery are alternately repeated 3 times, the value TSE ₃ of the tensile storage modulus measured at the 3 rd stretching is preferably 18N/mm ² or more.

The tensile storage modulus value TSE ₃ is more preferably 19N/mm ² or more, and still more preferably 20N/mm ² or more.

The upper limit of the tensile storage modulus value TSE ₃ is typically 50N/mm ².

As will be described later, when the adhesive layer 2 contains a curing component that is cured by irradiation with active energy rays, the dicing tape 10 according to the present embodiment preferably has a tensile storage modulus value TSE ₃ measured at the time of 3 rd stretching before and after the irradiation with active energy rays that satisfies the above-described numerical range.

When the value of the tensile storage modulus TSE ₃ is within the above range, the dicing die bonding film 20 including the dicing tape 10 is used, and the dicing die bonding film 20 is stretched in the plane direction to singulate the semiconductor wafer bonded to the die bonding layer 3 into a plurality of semiconductor chips each having the die bonding layer 3, and then, when the stretching is released, the interval between adjacent semiconductor chips each having the die bonding layer 3 can be further suppressed from becoming excessively narrow.

As a result, the adjacent semiconductor chips with the die bonding layers 3 can be further suppressed from excessively adhering to each other.

Further, by setting the value of the tensile storage modulus TSE ₃ to be within the above range, a sufficient tensile force can be transmitted to the dicing tape 10.

Therefore, when the dicing die bonding film 20 including the dicing tape 10 is used to singulate the semiconductor wafer bonded to the die bonding layer 3 into a plurality of semiconductor chips having the die bonding layer 3, the die bonding layer 3 can be more sufficiently cut and singulated.

The value TSE ₃ of the tensile storage modulus measured at the 3 rd stretch is referred to as: in the 3 rd step of carrying out the steps (1) to (5), the tensile elastic modulus value measured in the step (3) by the tensile tester is measured.

More specifically, in the stress-strain curve (S-S curve), the slope of the strain with respect to the stress can be calculated when the test piece of the dicing tape is stretched to a length of 180% (a length increased by 80% from the original length) along the longitudinal direction.

In the case where the base material 1 is formed of a resin film, the value TSE ₃ of the tensile storage modulus can be adjusted by appropriately adjusting the stretch ratio at the time of stretch forming the resin film or by appropriately adjusting the tension at the time of stretching, as in the case of the value TS ₃ of the tensile tension.

In the case where the base material 1 is made of 1 resin film, the value TSE ₃ of the tensile storage modulus can be adjusted by appropriately adjusting the thickness of the 1 resin film. When the base material 1 is formed as a laminate of a plurality of resin films, the value TSE ₃ of the tensile storage modulus can be adjusted by appropriately adjusting the thickness ratio of each resin film.

Further, by appropriately adjusting the resin composition in the resin composition for producing 1 or more kinds of resin films constituting the base material 1, the value TSE ₃ of the tensile storage modulus can be adjusted. The value TSE ₃ of the tensile storage modulus can also be adjusted by adding an additive such as a plasticizer to the resin composition.

In addition, as in the case of the tensile tension value TS ₃, the tensile storage modulus value TSE ₃ can also be adjusted by constituting the base material 1 as a resin film having a laminated structure of an elastomer layer and a non-elastomer layer, which will be described later.

Further, in the case of molding a resin film using an extrusion molding machine, the value TSE ₃ of the tensile storage modulus can be adjusted by appropriately adjusting the extrusion temperature of the die or by appropriately adjusting the cooling rate at which the resin extruded from the die into a film shape is cooled and solidified.

The value TSE ₁ of the tensile storage modulus measured at the 1 st stretching and the value TSE ₂ of the tensile storage modulus measured at the 2 nd stretching, which will be described later, may be adjusted in the same manner as described above.

In the dicing tape 10 according to the present embodiment, when the stretching and the recovery are alternately repeated 3 times, the maintenance ratio of the value TS ₃ of the stretching stress measured at the 3 rd stretching to the value TS ₁ of the stretching stress measured at the 1 st stretching is preferably 95% or more.

The maintenance rate of the tensile stress value TS ₃ to the tensile stress value TS ₁ is preferably 96% or more, more preferably 97% or more, still more preferably 98% or more, and still more preferably 99% or more.

The upper limit value of the maintenance rate of the tensile stress value TS ₃ to the tensile stress value TS ₁ may be 120%.

When the adhesive layer 2 contains a curing component that is cured by irradiation with active energy rays, as will be described later, the dicing tape 10 according to the present embodiment preferably satisfies the above-described numerical range in terms of the maintenance ratio of the value TS ₃ of the tensile stress measured at the 3 rd stretching to the value TS ₁ of the tensile stress measured at the 1 st stretching before and after the irradiation with active energy rays.

By setting the maintenance rate of the value TS ₃ of the tensile stress to the value TS ₁ of the tensile stress within the above-described range, that is, by making the variation of the value of the tensile stress small and substantially constant, the dicing die bonding film 20 provided with the dicing tape 10 is used and the dicing die bonding film 20 is stretched in the plane direction, so that the semiconductor wafer bonded to the die bonding layer 3 is singulated into a plurality of semiconductor chips with the die bonding layer 3, and then, when the stretching is released, the interval between the adjacent semiconductor chips with the die bonding layer 3 can be further suppressed from being excessively narrowed.

Here, the value TS ₁ of the tensile stress measured at the 1 st stretching means: and (3) a value of the test force measured by the tensile tester in the step (3) when the steps (1) to (5) are performed 1 st time.

In addition, the value TS ₂ of the tensile stress measured at the time of the 2 nd stretching in the following example items means: and (3) a value of the test force measured by the tensile tester in the step (3) when the steps (1) to (5) are performed at the 2 nd time.

In the dicing tape 10 according to the present embodiment, when the stretching and the recovery are repeated 3 times, the maintenance rate of the value TSE ₃ of the tensile storage modulus measured at the 3 rd stretching with respect to the value TSE ₁ of the tensile storage modulus measured at the 1 st stretching is preferably 35% or more.

The maintenance rate of the tensile storage modulus value TSE ₃ to the tensile storage modulus value TSE ₁ is more preferably 38% or more, and still more preferably 40% or more.

The upper limit value of the maintenance rate of the tensile storage modulus value TSE ₃ with respect to the tensile storage modulus value TSE ₁ may be 100%.

When the adhesive layer 2 contains a curing component that is cured by irradiation with active energy rays, as will be described later, the dicing tape 10 according to the present embodiment preferably satisfies the above-described numerical range in terms of the maintenance rate of the value TSE ₃ of the tensile storage modulus measured at the 3 rd stretching with respect to the value TSE ₁ of the tensile storage modulus measured at the 1 st stretching before and after the irradiation with active energy rays.

By setting the retention rate of the tensile storage modulus value TSE ₃ to the tensile storage modulus value TSE ₁ within the above-described range, that is, by setting the variation of the tensile storage modulus value to a predetermined value or more, the dicing die bonding film 20 including the dicing tape 10 is used and the dicing die bonding film 20 is stretched in the plane direction, whereby the semiconductor wafer bonded to the die bonding layer 3 is singulated into a plurality of semiconductor chips with the die bonding layer 3, and thereafter, when the stretching is released, the interval between the adjacent semiconductor chips with the die bonding layer 3 can be further suppressed from becoming excessively narrow.

Here, the tensile storage modulus TSE ₁ measured at the 1 st stretch is referred to as: in the case of carrying out the steps (1) to (5) 1 st, the tensile storage modulus value measured in the step (3) by the tensile tester is measured.

In addition, the tensile storage modulus TSE ₂ measured at the 2 nd stretching in the following example items means: in the case of carrying out the steps (1) to (5) at the 2 nd time, the tensile storage modulus value measured by the tensile tester in the step (3) is obtained.

The cut tape 10 according to the present embodiment may have a value of the yield stress measured at the 1 st stretch of 8N or more or 9N or more when the stretching and the recovery are repeated 3 times.

The value of the yield stress measured at the 1 st stretching may be 20N or less, 15N or less, or 12N or less.

The value of the yield stress measured at 1 st stretch is: at 1 st stretch, the dicing tape 10 generates stress at the strain of the yield point.

The strain at the yield point is: when step (3) is performed, that is, when the test piece of the dicing tape is stretched in the longitudinal direction from the original length to a length increased by 80%, if a decrease of 3% or more in the tensile stress measured during that period is confirmed, the strain amount at the maximum stress is displayed before the decrease is confirmed.

When the yield stress measured at the time of 1 st stretching is YS ₁ when repeating the stretching and the recovering for 3 times, in the dicing tape 10 according to the present embodiment, YS ₁、TS₂ and TS ₃ preferably satisfy the relationship of YS ₁:TS₂:TS₃ =1:0.7 to 1.3:0.7 to 1.3, more preferably satisfy the relationship of YS ₁:TS₂:TS₃ =1:0.8 to 1.2:0.8 to 1.2, and even more preferably satisfy the relationship of YS ₁:TS₂:TS₃ =1:0.9 to 1.1:0.9 to 1.1.

As described above, TS ₂ is a value of tensile stress measured at the time of the 2 nd stretching. TS ₃ is the value of the tensile stress measured at the 3 rd stretch.

By satisfying the above-described relation, even when the dicing die-bonding film 20 provided with the dicing tape 10 is repeatedly stretched in the plane direction, a sufficient force can be applied to the dicing die-bonding film 20 in each stretching.

In the dicing tape 10 according to the embodiment, when the stretching and the recovering are repeated 3 times, the value of the yield elongation measured at the time of the 1 st stretching may be 10mm or more, 15mm or more, or 17mm or more.

The elongation at yield point measured at the 1 st stretching may be 50mm or less, 40mm or less, or 35mm or less.

The value of the elongation at yield point can be obtained from a stress-strain curve (S-S curve). Specifically, in the stress-strain curve, the elongation value until the yield point is reached can be obtained.

The substrate 1 supports an adhesive layer 2.

The base material 1 is made of a resin film.

Examples of the resin contained in the resin film include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, fluororesin, cellulose resin, silicone resin, and the like.

Among the various resins, the resin film preferably contains polyolefin.

Examples of the polyolefin include homopolymers of α -olefins, copolymers of 2 or more α -olefins, and copolymers of 1 or 2 or more α -olefins with other vinyl monomers.

The copolymer of the α -olefin may be a block polypropylene, a random polypropylene, or the like.

The homopolymer of an α -olefin is preferably a homopolymer of an α -olefin having 2 to 12 carbon atoms. Examples of such homopolymers include ethylene, propylene, 1-butene, and 4-methyl-1-pentene.

Examples of the copolymer of at least 2 kinds of α -olefins include an ethylene/propylene copolymer, an ethylene/1-butene copolymer, an ethylene/propylene/1-butene copolymer, an ethylene/α -olefin copolymer having at least 5 carbon atoms and at most 12 carbon atoms, a propylene/ethylene copolymer, a propylene/1-butene copolymer, and an α -olefin copolymer having at least 5 carbon atoms and at most 12 carbon atoms.

The copolymer of 1 or 2 or more kinds of α -olefins and other vinyl monomers includes ethylene-vinyl acetate copolymer (EVA) and the like.

The vinyl acetate content in the ethylene-vinyl acetate copolymer (EVA) may be 5% or more, or may be 6% or more, or may be 7% or more.

The vinyl acetate content may be 30% or less, 25% or less, 20% or less, 15% or less, or 10% or less.

The vinyl acetate content is preferably 7% to 10%.

Examples of the commercial products of the ethylene-vinyl acetate copolymer (EVA) include Ultrathene (registered trademark) series manufactured by eastern co, EVAFLEX (registered trademark) series manufactured by DOW-MITSUIPOLYCHEMICALS co.

The ethylene-vinyl acetate copolymer is preferably used as a commercially available product, and among the Ultrathene (registered trademark) series, ultrathene (registered trademark) 520F is particularly preferred.

The polyolefin may be what is known as an alpha-olefin thermoplastic elastomer. Examples of the α -olefin thermoplastic elastomer include an elastomer obtained by combining a propylene-ethylene copolymer with a propylene homopolymer, and an α -olefin terpolymer having 4 or more propylene-ethylene-carbon atoms.

The ethylene content in the α -olefin thermoplastic elastomer resin may be 7% or more, or may be 8% or more.

The ethylene content may be 20% or less, 15% or less, or 10% or less.

The ethylene content is particularly preferably 8% to 10%.

As the commercial products of the above-mentioned alpha-olefin thermoplastic elastomer, for example, vistamax series manufactured by Exxon Mobil company as olefin elastomer resin is mentioned.

Of the Vistamax series, vistamax (Vistamax) and 3980 are particularly preferable as the propylene-based elastomer resin.

The resin film may contain 1 kind of the above-mentioned resin, or may contain 2 or more kinds of the above-mentioned resins.

When the adhesive layer 2 contains an ultraviolet-curable adhesive, which will be described later, the resin film for producing the base material 1 is preferably formed so as to have ultraviolet transparency.

The substrate 1 may have a single-layer structure or a laminated structure.

The substrate 1 may be obtained by stretch-less forming, or may be obtained by stretch-forming, preferably by stretch-forming.

When the substrate 1 has a single-layer structure, the substrate 1 is preferably composed of a resin film containing a polyolefin resin, and the polyolefin resin is preferably composed of a resin film containing at least one of the ethylene-vinyl acetate copolymer (EVA) and the α -olefin thermoplastic elastomer resin.

That is, it is preferable to construct it in the form of a layer containing an elastomer (hereinafter referred to as an elastomer layer).

When the elastomer layer contains both the ethylene-vinyl acetate copolymer (EVA) and the α -olefin thermoplastic elastomer resin as the polyolefin resin, the mass ratio of the ethylene-vinyl acetate copolymer (EVA) to the α -olefin thermoplastic elastomer resin is preferably in the range of ethylene-vinyl acetate copolymer (EVA): α -olefin thermoplastic elastomer=20:80 to 80:20.

In the case where the substrate 1 has a single-layer structure, the product name "ODZ5" manufactured by the large-scale industrial company may be used as the substrate 1.

The ODZ5 is a polyolefin resin film.

When the substrate 1 has a laminated structure, the substrate 1 preferably has an elastomer layer and a layer containing a non-elastomer (hereinafter referred to as a non-elastomer layer).

By forming the base material 1 into a base material having an elastomer layer and a non-elastomer layer, the elastomer layer can function as a stress relaxation layer for relaxing tensile stress. That is, since the tensile stress generated in the base material 1 can be made small, the base material 1 can be made to have a moderate hardness and relatively easily stretch.

This can improve the severance of the semiconductor wafer into a plurality of semiconductor chips.

In addition, in the case of cutting in the expanding step, breakage of the base material 1 due to breakage can be suppressed.

In this specification, the elastomer layer means: a low elastic modulus layer having a tensile storage modulus at room temperature that is low compared to the non-elastomeric layer. The elastomer layer may have a tensile storage modulus at room temperature of 10MPa or more and less than 200MPa, and the non-elastomer layer may have a tensile storage modulus at room temperature of 200MPa or more and 500MPa or less.

In the present specification, room temperature means a temperature of 23±2℃.

In the present specification, the tensile storage modulus at room temperature is a value measured by using a solid viscoelasticity measuring device (for example, model number RSAIII, manufactured by Rheometric Scientific).

The tensile storage modulus at room temperature can be obtained by the following procedure.

(1) Test pieces 40mm in length (measured length) and 10mm in width were prepared.

(2) The tensile storage modulus of the test piece was measured at a temperature range of-30 to 280℃using a solid viscoelasticity measuring apparatus (for example, model number RSAIII, manufactured by Rheometric Scientific) under the conditions of a frequency of 1Hz, a heating rate of 10 ℃/min, and a distance between clamps of 22.5 mm. And, the value at room temperature (23.+ -. 2 ℃ C.) was read.

The elastomer layer is preferably constructed as described above.

The non-elastomer layer may contain 1 non-elastomer or 2 or more non-elastomers, and preferably contains metallocene PP described later.

In the case where the base material 1 has an elastomer layer and a non-elastomer layer, the base material 1 is preferably formed in a three-layer structure (non-elastomer layer/non-elastomer layer) having an elastomer layer as a center layer and non-elastomer layers on opposite sides of the center layer.

When the base material 1 is a laminate structure of an elastomer layer and a non-elastomer layer, the elastomer layer contains an α -olefin thermoplastic elastomer and the non-elastomer layer contains a polyolefin such as a metallocene PP described later, the elastomer layer preferably contains an α -olefin thermoplastic elastomer in an amount of 50 mass% or more and 100 mass% or less, more preferably contains an α -olefin thermoplastic elastomer in an amount of 70 mass% or more and 100 mass% or less, still more preferably contains an α -olefin thermoplastic elastomer in an amount of 80 mass% or more and 100 mass% or less, still more preferably contains an α -olefin thermoplastic elastomer in an amount of 90 mass% or more and 100 mass% or less, and still more preferably contains an α -olefin thermoplastic elastomer in an amount of 95 mass% or more and 100 mass% or less, based on the total mass of the elastomer forming the elastomer layer.

When the α -olefin thermoplastic elastomer is contained in the above range, the affinity between the elastomer layer and the non-elastomer layer is increased, and thus the substrate 1 can be relatively easily extrusion-molded. Further, since the elastomer layer can function as a stress relaxation layer, when the semiconductor wafer is diced into a plurality of semiconductor chips by using a dicing die bonding film described later, the dicing of the semiconductor wafer can be efficiently performed.

When the base material 1 has a laminated structure of an elastomer layer and a non-elastomer layer, the base material 1 is preferably obtained by coextrusion molding in which an elastomer and a non-elastomer are coextruded to form a laminated structure of an elastomer layer and a non-elastomer layer. As the coextrusion molding, any suitable coextrusion molding generally performed in the production of films, sheets, and the like can be used. In the coextrusion molding, the inflation method and the coextrusion T-die method are preferably used, from the viewpoint that the base material 1 can be obtained efficiently and inexpensively.

When the base material 1 having a laminated structure is obtained by coextrusion molding, the elastomer layer and the non-elastomer layer are in contact with each other in a state of being heated and melted, and therefore, the difference in melting point between the elastomer and the non-elastomer is preferably small.

By making the difference in melting point small, it is possible to suppress excessive heat application to either the elastomer or the non-elastomer exhibiting a low melting point. This can suppress the formation of by-products due to thermal degradation of either the elastomer or the non-elastomer exhibiting a low melting point.

Further, occurrence of lamination failure between the elastomer layer and the non-elastomer layer due to excessive decrease in viscosity of either the elastomer or the non-elastomer exhibiting a low melting point can be suppressed.

The difference in melting point between the elastomer and the non-elastomer is preferably 0 ℃ or more and 70 ℃ or less, more preferably 0 ℃ or more and 55 ℃ or less.

The melting points of the aforementioned elastomers and the aforementioned nonelastomers can be determined by Differential Scanning Calorimetry (DSC) analysis. For example, a differential scanning calorimeter (model: DSC Q2000, manufactured by TA Instruments) was used, and the temperature was raised to 200℃at a temperature-raising rate of 5℃per minute under a nitrogen gas stream to obtain the peak temperature of the endothermic peak, whereby measurement was possible.

The thickness of the base material 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, still more preferably 55 μm or more and 170 μm or less, and most preferably 60 μm or more and 160 μm or less.

By setting the thickness of the base material 1 to the above range, the dicing tape can be efficiently manufactured, and the semiconductor wafer bonded to the dicing tape can be efficiently cut.

The thickness of the substrate 1 can be obtained by measuring the thickness of any 5 measurement points selected at random using, for example, a dial gauge (model: R-205, manufactured by PEACOCK corporation), and arithmetically averaging these thicknesses.

In the base material 1 in which the elastomer layer and the non-elastomer layer are laminated, the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more and 1/3.5 or less, still more preferably 1/25 or more and 1/4, particularly preferably 1/22 or more and 1/4 or less, and most preferably 1/20 or more and 1/4 or less.

By setting the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer to the above range, the dicing of the semiconductor wafer can be efficiently performed when dicing the semiconductor wafer into a plurality of semiconductor chips using a dicing die bonding film described later.

The elastomer layer may have a single layer (1 layer) structure or a laminated structure. The elastomer layer is preferably 1 to 5 layers, more preferably 1 to 3 layers, even more preferably 1 to 2 layers, and most preferably 1 layer. In the case where the elastomer layers are laminated, all layers may contain the same elastomer, or at least 2 layers may contain different elastomers.

The non-elastomer layer may have a single layer (1 layer) structure or a laminated structure. The non-elastomer layer is preferably 1 to 5 layers, more preferably 1 to 3 layers, even more preferably 1 to 2 layers, and most preferably 1 layer. In the case where the nonelastomeric layers are laminated, all layers may contain the same nonelastomer, or at least 2 layers may contain different nonelastomers.

The non-elastomer layer preferably contains a polypropylene resin (hereinafter referred to as metallocene PP) as a polymer based on a metallocene catalyst as a non-elastomer.

Examples of the metallocene PP include propylene/α -olefin copolymers as a polymer of a metallocene catalyst.

By including the non-elastomer layer with the metallocene PP, the dicing tape can be efficiently manufactured.

In addition, when dicing a semiconductor wafer using a dicing die bonding film described later to singulate the semiconductor wafer into a plurality of semiconductor chips, the dicing of the semiconductor wafer can be efficiently performed.

The commercial products of the metallocene PP include, for example, WINTEC (registered trademark) series of Japan Polypropylene.

The Melt Flow Rate (MFR) of the metallocene PP may be 2.0g/10min or more, or may be 5.0g/10min or more.

The Melt Flow Rate (MFR) may be 30g/10min or less, 25g/10min or less, 20g/10min or less, or 10g/10min or less.

Of the WINTEC (registered trademark) series, WINTEC (registered trademark) WXK1233 is particularly preferable.

Here, the metallocene catalyst means: a catalyst formed from a transition metal compound (so-called metallocene compound) of group 4 of the periodic table containing a ligand having a cyclopentadiene skeleton, and a cocatalyst capable of reacting with the metallocene compound to activate the metallocene compound into a stable ionic state. The metallocene catalyst contains an organoaluminum compound as required. The metallocene compound is a crosslinked metallocene compound capable of stereotactically polymerizing propylene.

Among the propylene/α -olefin copolymers as a polymer of the metallocene catalyst, a propylene/α -olefin random copolymer as a polymer of the metallocene catalyst is preferable. Among the propylene/α -olefin random copolymers as the polymerization product of the metallocene catalyst, those selected from the group consisting of propylene/α -olefin random copolymers having 2 carbon atoms as the polymerization product of the metallocene catalyst, propylene/α -olefin random copolymers having 4 carbon atoms as the polymerization product of the metallocene catalyst, and propylene/ethylene random copolymers having 5 carbon atoms as the polymerization product of the metallocene catalyst are preferable, and among these, those which are most preferable are those as the polymerization product of the metallocene catalyst.

Here, if the elastomer layer is disposed on the outermost layer of the base material 1, the elastomer layers disposed on the outermost layer are likely to adhere to each other (are likely to be stuck together) when the base material 1 is formed into a roll. Therefore, it is difficult to unwind the base material 1 from the roll.

In a preferred embodiment of the substrate 1 having the laminated structure, the non-elastomer layer/non-elastomer layer is disposed, that is, the non-elastomer layer is disposed on the outermost layer. Therefore, the substrate 1 of this embodiment is excellent in blocking resistance.

This can suppress delays in manufacturing a semiconductor device by using a dicing die bonding film described later due to adhesion.

The adhesive layer 2 contains an adhesive.

The adhesive layer 2 is held by bonding semiconductor wafers for singulation into semiconductor chips.

The adhesive may be an adhesive (hereinafter referred to as an adhesive-reduced adhesive) that can reduce adhesive force by an external action during use of the dicing tape 10.

In the case of using an adhesion-reducing adhesive as the adhesive, the adhesive layer 2 can be used in a state of exhibiting higher adhesion (hereinafter referred to as a high adhesion state) and a state of exhibiting lower adhesion (hereinafter referred to as a low adhesion state) during the use of the dicing tape 10. For example, when the semiconductor wafer bonded to the dicing tape 10 is to be diced, a high-adhesion state is used in order to prevent a plurality of semiconductor chips singulated by dicing of the semiconductor wafer from floating or peeling from the adhesive layer 2.

In contrast, after dicing the semiconductor wafer, in order to pick up the singulated semiconductor chips, a low-adhesion state is used in order to easily pick up the semiconductor chips from the adhesive layer 2.

The adhesive-reduced pressure-sensitive adhesive may be, for example, an adhesive that can be cured by irradiation of active energy rays during use of the dicing tape 10 (hereinafter referred to as an active energy ray-curable adhesive).

That is, the adhesion-reduced pressure-sensitive adhesive contains a curing component that cures by irradiation with active energy rays.

Examples of the active energy ray-curable adhesive include adhesives of the type cured by irradiation with electron rays, ultraviolet rays, α rays, β rays, γ rays or X rays. Of these, an adhesive cured by ultraviolet irradiation (ultraviolet-curable adhesive) is preferably used.

Examples of the active energy ray-curable adhesive include additive-type active energy ray-curable adhesives containing a matrix polymer as a main component and an active energy ray-polymerizable monomer component or an active energy ray-polymerizable oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond.

As the matrix polymer, an acrylic polymer is preferably used.

The matrix polymer may be a polymer that is polymerized and cured by irradiation with active energy rays, thereby reducing the adhesive force of the adhesive layer 2.

The acrylic polymer may be a polymer containing a monomer unit derived from a (meth) acrylate. Examples of the (meth) acrylic acid ester include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, aryl (meth) acrylate, and the like.

As the monomer unit derived from the aforementioned (meth) acrylate ester, for example, 2-hydroxyethyl acrylate (HEA), ethyl Acrylate (EA), butyl Acrylate (BA), 2-ethylhexyl acrylate (2 EHA), isononyl acrylate (iNA), lauryl Acrylate (LA), 4-Acryloylmorpholine (AMCO), 2-isocyanatoethyl Methacrylate (MOI) and the like are preferably used.

The monomer units derived from the aforementioned (meth) acrylic acid esters may be used alone in 1 kind, or may be used in combination of 2 or more kinds.

The acrylic polymer preferably contains the 2-ethylhexyl acrylate (2 EHA), the 2-hydroxyethyl acrylate (HEA) and the 2-isocyanatoethyl Methacrylate (MOI) as monomer units derived from the (meth) acrylate.

The acrylic polymer may contain, as monomer units derived from the (meth) acrylic acid ester, the Lauryl Acrylate (LA) and isononyl acrylate (iNA) in addition to the 2EHA, the HEA and the MOI.

The adhesive layer 2 may contain an external crosslinking agent.

As the external crosslinking agent, any crosslinking agent may be used as long as it can react with the matrix polymer (for example, acrylic polymer) to form a crosslinked structure.

Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, melamine-based crosslinking agents, and the like.

Examples of the active energy ray-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate.

Examples of the active energy ray-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. The content ratio of the active energy ray-polymerizable monomer component and the active energy ray-polymerizable oligomer component in the active energy ray-curable adhesive is selected within a range that the adhesiveness of the adhesive layer 2 is suitably reduced.

The aforementioned active energy ray-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include azo compounds, α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphates.

Examples of the azo compound include Azobisisobutyronitrile (AIBN).

In the case where the adhesive layer 2 contains an external crosslinking agent, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external crosslinking agent.

In addition, in the case where the adhesive layer 2 contains a photopolymerization initiator, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

The pressure-sensitive adhesive layer 2 may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a colorant such as a pigment or a dye, and the like, in addition to the above-described components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and still more preferably 5 μm or more and 25 μm or less.

[ Dicing die-bonding film ]

As shown in fig. 2, the dicing die-bonding film 20 according to the present embodiment includes a dicing tape 10 and a die-bonding layer 3 laminated on the dicing tape 10.

As described above, the dicing tape 10 includes the base material 1 and the adhesive layer 2 laminated on the base material 1.

Therefore, the dicing die-bonding film 20 according to the present embodiment has the die-bonding layer 3 laminated on the adhesive layer 2 of the dicing tape 10.

In the dicing die bonding film 20, a semiconductor wafer is bonded to the die bonding layer 3.

In dicing the semiconductor wafer using the dicing die bonding film 20, the die bonding layer 3 is also diced together with the semiconductor wafer.

The die bonding layer 3 is cut into a size corresponding to the size of the singulated semiconductor chips. Thereby, a semiconductor chip with the die bonding layer 3 can be obtained.

In the dicing die-bonding film 20 according to the present embodiment, the base material 1 and the adhesive layer 2 are configured in the same manner as described above.

Therefore, the die bonding layer 3 will be described below.

The die bonding layer 3 preferably has thermosetting properties.

The thermosetting property can be imparted to the die bonding layer 3 by making the die bonding layer 3 contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group.

In the case where the die bonding layer 3 includes a thermosetting resin, examples of such a thermosetting resin include an epoxy resin, a phenolic resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, and the like. Among these, epoxy resins are preferably used.

Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, triphenylmethane type, tetraphenolethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins.

Examples of the phenolic resin as the curing agent for the epoxy resin include polyhydroxystyrene such as novolac type phenolic resin, resol type phenolic resin and poly-p-hydroxystyrene.

In the case where the die bonding layer 3 includes a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group is exemplified as such a thermoplastic resin. The acrylic resin of the thermosetting functional group-containing acrylic resins includes resins containing monomer units derived from (meth) acrylic acid esters.

In the thermosetting resin having a thermosetting functional group, the curing agent is selected according to the kind of the thermosetting functional group.

The die bonding layer 3 may contain a heat curing catalyst (curing accelerator) from the viewpoint of sufficiently performing the curing reaction of the resin component or improving the curing reaction rate. Examples of the heat curing catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds.

The die bonding layer 3 may include a thermoplastic resin. The thermoplastic resin functions as a binder.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 and polyamide 6, saturated polyester resin such as phenoxy resin, acrylic resin, PET and PBT, polyamide imide resin and fluororesin.

The thermoplastic resin may be used alone or in combination of two or more.

The thermoplastic resin is preferably an acrylic resin from the viewpoints of low ionic impurities and high heat resistance, which makes it easy to ensure connection reliability by the die bonding layer.

The acrylic resin is preferably a polymer containing a monomer unit derived from a (meth) acrylate ester as the most monomer unit in mass ratio. Examples of the (meth) acrylic acid ester include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, aryl (meth) acrylate, and the like. The acrylic resin may contain monomer units derived from other components copolymerizable with the (meth) acrylate. Examples of the other component include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, functional group-containing monomers such as acrylamide and acrylonitrile; various polyfunctional monomers, and the like. From the viewpoint of achieving high cohesive force in the die bonding layer, the acrylic resin is preferably a copolymer of a (meth) acrylic acid ester (in particular, an alkyl (meth) acrylate having an alkyl group with a carbon number of 4 or less), a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (in particular, a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate and butyl acrylate and acrylic acid and acrylonitrile and polyglycidyl (meth) acrylate.

The die bonding layer 3 may contain 1 or 2 or more other components as needed. Examples of the other component include a flame retardant, a silane coupling agent, and an ion scavenger.

The thickness of the die bonding layer 3 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or may be 5 μm or more and 100 μm or less.

The dicing die-bonding film 20 according to the present embodiment is used as an auxiliary tool for manufacturing a semiconductor integrated circuit, for example.

Hereinafter, a specific example of the use of the dicing die-bonding film 20 will be described.

The method for manufacturing a semiconductor integrated circuit includes: a half-dicing step of forming grooves in a semiconductor wafer in order to process the semiconductor wafer into chips (dice) by dicing; a back grinding step of grinding the semiconductor wafer after the half-dicing step to reduce the thickness; a mounting step of adhering one surface (for example, a surface opposite to the circuit surface) of the semiconductor wafer after the back grinding step to the die bonding layer 3, and fixing the semiconductor wafer to the dicing tape 10; an expanding step of expanding the interval between the semiconductor chips subjected to the half-dicing process; a pick-up step of peeling the die bonding layer 3 from the adhesive layer 2 and taking out the semiconductor chip (die) in a state where the die bonding layer 3 is attached; and a die bonding step of bonding the semiconductor chip (die) in a state where the die bonding layer 3 is bonded to the adherend.

In carrying out these steps, the dicing die-bonding film 20 described in this embodiment is used as a manufacturing auxiliary.

In the half-dicing step, half-dicing processing for dicing the semiconductor integrated circuit into small pieces (dice) is performed as shown in fig. 3A and 3B. Specifically, a wafer processing tape T is attached to a surface of the semiconductor wafer W opposite to the circuit surface (see fig. 3A). The dicing ring R is attached to the wafer processing tape T (see fig. 3A). In a state where the wafer processing tape T is attached, a dividing groove is formed (see fig. 3B). In the back grinding step, as shown in fig. 3C and 3D, the semiconductor wafer is ground to reduce the thickness. Specifically, the back surface polishing tape G is stuck to the surface on which the grooves are formed, and the wafer processing tape T stuck first is peeled off (see fig. 3C). The back surface polishing tape G is attached thereto, and grinding is performed until the semiconductor wafer W reaches a predetermined thickness (see fig. 3D).

In the mounting step, as shown in fig. 4A to 4B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, the semiconductor wafer W subjected to the half dicing process is stuck on the exposed surface of the die bonding layer 3 (see fig. 4A). Thereafter, the back surface polishing tape G is peeled from the semiconductor wafer W (see fig. 4B).

In the expansion step of the present embodiment, expansion is performed under a relatively high temperature condition (e.g., room temperature (23.+ -. 2 ℃)).

That is, in the expansion step of the present embodiment, expansion under a relatively low temperature condition (for example, -20 to 5 ℃) is not performed before expansion under a relatively high temperature condition.

Therefore, the expansion process of the present embodiment is performed by the die bonding apparatus.

In the expanding step, as shown in fig. 5A to 5C, the dicing ring R is fixed to the holding tool H of the die bonding apparatus. The dicing die-bonding film 20 is lifted up from the lower side by a lifting member U provided in the die-bonding apparatus, whereby the dicing die-bonding film 20 is stretched so as to expand in the plane direction (see fig. 5B). Thus, the semiconductor wafer W subjected to the half dicing is singulated into a plurality of semiconductor chips under a relatively high temperature condition (e.g., room temperature (23±2 ℃), and the die bonding layer 3 is cut into a size equivalent to the singulated plurality of semiconductor chips. Thus, a plurality of semiconductor chips with the die bonding layer 3 are obtained.

In the expansion step, the dicing die bonding film 20 is stretched so as to expand in the planar direction as described above, thereby widening the interval between the adjacent semiconductor chips having the die bonding layers 3.

As described above, after the interval between the adjacent semiconductor chips with the die bonding layers 3 is widened, the expanding state is released by lowering the jack member U (see fig. 5C).

In the pick-up step, as shown in fig. 6, the semiconductor chip with the die bonding layer 3 is peeled from the adhesive layer 2 of the dicing tape 10.

Specifically, the pin member P provided in the die bonding apparatus is raised, and the semiconductor chip with the die bonding layer 3 to be picked up is lifted up through the dicing tape 10. The semiconductor chip with the die bonding layer 3 lifted up is held by the suction jig J provided in the die bonding apparatus.

In the die bonding step, the semiconductor chip having the die bonding layer 3 is bonded to an adherend such as a mounting substrate by a die bonding device.

In the present embodiment, the expanding step, the picking-up step, and the die bonding step are performed in the die bonding apparatus, but only a part of the semiconductor chip with the die bonding layer 3 obtained in the expanding step may be supplied to the picking-up step and the die bonding step.

In this case, the dicing die bonding film 20 having the remaining semiconductor chips with the die bonding layer 3 is temporarily taken out from the die bonding apparatus and stored.

As described above, when the dicing tape 10 included in the dicing die-bonding film 20 according to the present embodiment is alternately repeatedly stretched to a length of 180% of the original length at a speed of 500mm/min and recovered to the stretched dicing tape 10 for 3 times, the value of the tensile stress TS ₃ measured at the 3 rd stretching becomes 7N/10mm or more.

Therefore, when the dicing die bonding film 20 having the remaining semiconductor chips with the die bonding layers 3 is temporarily taken out from the die bonding apparatus and stored, the spacing between the adjacent semiconductor chips with the die bonding layers 3 due to excessive shrinkage of the dicing tape 10 can be suppressed to a level where the die bonding layers 3 excessively adhere to each other.

Further, since the value of the tensile stress TS ₃ falls within the above range, a sufficient tensile force can be transmitted to the dicing tape 10.

Accordingly, when the dicing die bonding film 20 is mounted on the die bonding apparatus so as to supply the remaining semiconductor chips with the die bonding layers 3 to the pickup step and the die bonding step, even if the adjacent die bonding layers 3 are stuck together, the adhesion between the adjacent die bonding layers 3 can be sufficiently released by supplying the semiconductor chips again to the expanding step.

As a result, the semiconductor chips each having the die bonding layer 3 can be appropriately picked up and bonded to an adherend such as a mounting board.

The dicing tape according to the present invention is not limited to the foregoing embodiment.

The dicing tape according to the present invention is not limited to the above-described effects.

Further, the dicing tape according to the present invention may be variously modified within a range not exceeding the gist of the present invention.

The matters disclosed in the present specification include the following aspects.

(1)

A dicing tape comprising a base material and an adhesive layer laminated on the base material,

The stretching of the dicing tape in the plane direction at a speed of 500mm/min to a length of 180% of the original length and the recovery of the dicing tape after stretching were alternately repeated 3 times, and the value of the stretching stress measured at the 3 rd stretching was 7N/10mm or more.

(2)

The dicing tape according to the above (1), wherein when the stretching and the recovering are alternately repeated 3 times, the value of the tensile storage modulus measured at the 3rd stretching is 18N/mm ² or more.

(3)

The dicing tape according to the above (1) or (2), wherein, when the stretching and the recovering are alternately repeated 3 times,

The retention rate of the value of the tensile stress measured at the 3 rd stretching to the value of the tensile stress measured at the 1 st stretching is 95% or more.

(4)

The dicing tape according to any one of the above (1) to (3), wherein when the stretching and the recovering are alternately repeated 3 times,

The retention rate of the value of the tensile storage modulus measured at the 3 rd stretching to the value of the tensile storage modulus measured at the 1 st stretching is 35% or more.

(5)

The dicing tape according to the above (1), wherein the adhesive layer contains a curing component that cures by irradiation with active energy rays,

Before and after the irradiation of the active energy rays,

When the stretching and the recovery are alternately repeated 3 times, the value of the tensile stress measured at the 3 rd stretching is 7N/10mm or more.

(6)

The dicing tape according to the above (5), wherein, before and after the irradiation of the aforementioned active energy rays,

When the stretching and the recovery are alternately repeated 3 times, the value of the tensile storage modulus measured at the 3 rd stretching is 18N/mm ² or more.

(7)

The dicing tape according to the above (5) or (6), wherein, before and after the irradiation of the aforementioned active energy rays,

When the stretching and the recovering are alternately repeated 3 times,

(8)

The dicing tape according to any one of the above (5) to (7), wherein, before and after the irradiation with the active energy rays,

When the stretching and the recovering are alternately repeated 3 times,

The retention of the value of the tensile storage modulus measured at the 3 rd stretching with respect to the value of the tensile storage modulus measured at the 1 st stretching is 95% or more.

Examples

The present invention will be described more specifically with reference to examples. The following examples are given to illustrate the present invention in more detail, but the scope of the present invention is not limited thereto.

< Preparation of adhesive composition A >

The adhesive composition a was prepared mainly at the ratio (parts by mass) shown in table 1 below using an acrylic monomer, an initiator, and a catalyst.

Specifically, first, 2-ethylhexyl acrylate (hereinafter referred to as 2 EHA) and 2-hydroxyethyl acrylate (hereinafter referred to as HEA) as acrylic monomers, and azobisisobutyronitrile (hereinafter referred to as AIBN) as an initiator were added to a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer and a stirrer, ethyl acetate was added so that the concentration of the acrylic monomers became 38 mass%, and then, polymerization was carried out under a nitrogen stream at 62 ℃ for 4 hours and polymerization was carried out at 75 ℃ for 2 hours to obtain an acrylic polymer a.

Subsequently, 2-methacryloyloxyethyl isocyanate (hereinafter referred to as MOI) was added to the acrylic polymer A, dibutyltin IV as a catalyst was further added, and then an addition reaction treatment was performed at 50℃for 12 hours under an air stream to obtain an acrylic polymer A'.

Subsequently, 0.75 parts by mass of a polyisocyanate compound (trade name "cornonate L", manufactured by japan polyurethane company) and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad127", manufactured by IGM company) were added to 100 parts by mass of the acrylic polymer a', and then diluted with ethyl acetate so that the solid content concentration became 20% by mass, to prepare an adhesive composition a.

< Preparation of adhesive composition B >

In the step of obtaining the acrylic polymer a, an adhesive composition B was produced in the same manner as the adhesive composition a except that lauryl acrylate (hereinafter referred to as LA) and isononyl acrylate (iNA) were used in the ratios (parts by mass) shown in table 1 below, except for 2EHA and HEA.

TABLE 1

Example 1

< Production of dicing tape >

The adhesive composition a was applied to the silicone release treated surface of a PET release film (thickness: 50 μm) having a surface subjected to silicone release treatment using an applicator (see table 2 below), and then dried at 120 ℃ for 2 minutes to form the adhesive layer described in example 1 having a thickness of 10 μm (see table 2 below).

Thereafter, the base material shown in the item of example 1 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in example 1.

TABLE 2

TABLE 3

The substrate described in example 1 was molded using Ultrathene (registered trademark) 520F (manufactured by eastern co.) as a material, using a single-layer extrusion T-die molding machine.

The molding using the extrusion T-die molding machine was performed at a die temperature of 200 ℃.

The thickness of the base material obtained by extrusion molding was 125. Mu.m.

After the molded base material is sufficiently cured at room temperature, the cured base material is rolled into a roll shape to prepare a roll body.

The substrate drawn from the roll was cut into a predetermined planar size, and the substrate described in example 1 was prepared.

Example 2

< Production of dicing tape >

The same procedure as in example 1 was repeated except that the adhesive composition B was used in place of the adhesive composition a to give a thickness of 30 μm, and the adhesive layer described in example 2 was formed on the PET separator (see table 2).

Thereafter, the base material shown in the item of example 2 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in example 2.

The base material described in example 2 was molded using a single-layer extrusion T-die molding machine, using a mixed resin obtained by mixing Vistamax 3980:3980 (manufactured by Exxon Mobil corporation) with an Ultrathene (registered trademark) 520F (manufactured by eastern co.) at a mass ratio of 30 mass%.

The thickness of the base material obtained by extrusion molding was 100. Mu.m.

The substrate drawn from the roll was cut into a predetermined planar size, and the substrate described in example 2 was prepared.

Example 3

< Production of dicing tape >

The adhesive layer described in example 3 was formed on a PET separator in the same manner as in example 1 except that the thickness was set to 30 μm (see table 2).

Thereafter, the base material shown in the item of example 3 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in example 3.

The base material described in example 3 was molded using WINTEC WXK1233 (manufactured by Japan Polypropylene) and Ultrathene (registered trademark) 520F (manufactured by eastern co.) as materials, and using 2 types of 3-layer extrusion T-die molding machines.

The molding using the extrusion T-die molding machine described above was performed at a die temperature of 200 ℃.

The thickness of the base material obtained by extrusion molding was 100. Mu.m.

The molded substrate had a 3-layer structure of a layer/B layer/C layer. The 3-layer structure has a B layer as an intermediate layer and a layer a and a layer C as outer layers on both sides of the B layer. The B layer is composed of Ultrathene (registered trademark) 520F, and the a and C layers are composed of WINTEC WXK 1233.

The thickness ratio (layer thickness ratio) of the a layer, the B layer, and the C layer is a layer a to B to C layer=1:10:1.

The substrate drawn from the roll was cut into a predetermined planar size, and the substrate described in example 3 was prepared.

Example 4

< Production of dicing tape >

The same procedure as in example 1 was repeated except that the adhesive composition B was used in place of the adhesive composition a to give a thickness of 30 μm, and the adhesive layer described in example 4 was formed on the PET separator (see table 2).

Thereafter, the base material shown in the item of example 4 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in example 4.

The base material described in example 4 was molded using a mixed resin obtained by mixing WINTEC WXK1233,1233 (manufactured by Japan Polypropylene) and Vistamax 3980,3980 (manufactured by Exxon Mobil) at a mass ratio of 70 mass% and Ultrathene (registered trademark) 520F (manufactured by eastern co.) at a mass ratio of 30 mass%, and using a 2-type 3-layer extrusion T-die molding machine.

The thickness of the base material obtained by extrusion molding was 100. Mu.m.

The molded substrate had a 3-layer structure of a layer/B layer/C layer. The 3-layer structure has a B layer as an intermediate layer and a layer a and a layer C as outer layers on both sides of the B layer. The B layer is composed of the mixed resin, and the A layer and the C layer are composed of WINTEC WXK 1233.

The substrate drawn from the roll was cut into a predetermined planar size, and the substrate described in example 4 was prepared.

Example 5

< Production of dicing tape >

The adhesive layer described in example 5 was formed on a PET separator in the same manner as in example 1 except that the thickness was set to 30 μm (see table 2).

Thereafter, the base material shown in example 5 of table 3 was bonded to the adhesive layer, and cured at 50 ℃ for 24 hours, to obtain a dicing tape described in example 5.

The substrate "ODZ5" described in example 5 was a polyolefin resin film manufactured by Daku Industrial Co., ltd, and the thickness thereof was 80. Mu.m.

Comparative example 1

< Production of dicing tape >

The adhesive layer described in comparative example 1 was formed on a PET separator in the same manner as in example 1 except that the thickness was set to 30 μm (see table 2).

Thereafter, the base material shown in the item of comparative example 1 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in comparative example 1.

The substrate "ODZ4" described in comparative example 1 was a polyolefin resin film manufactured by Daku Industrial Co., ltd, and the thickness thereof was 80. Mu.m.

Comparative example 2

< Production of dicing tape >

In the same manner as in example 1, an adhesive layer described in comparative example 2 was formed on a PET separator (see table 2).

Thereafter, the base material shown in the item of comparative example 2 of table 3 was bonded to the adhesive layer, and then cured at 50 ℃ for 24 hours, to obtain a dicing tape described in comparative example 2.

The substrate described in comparative example 2 was molded using ACRYFT CM8013 (manufactured by Sumitomo chemical Co., ltd.) as a material and a single-layer extrusion T-die molding machine.

The thickness of the base material obtained by extrusion molding was 125. Mu.m.

Then, the substrate drawn from the roll was cut into a planar size of a predetermined size, thereby preparing the substrate described in comparative example 2.

(Tensile stress)

As described in the above embodiments, the dicing tape according to each example was measured for the tensile stress at the 1 st stretching, the tensile stress at the 2 nd stretching, and the tensile stress at the 3 rd stretching.

Since the adhesive layers of the dicing tapes described in the respective examples were cured by irradiation with active energy rays, tensile stress at each stretching was measured for both cases before and after irradiation with active energy rays.

The measurement results before irradiation with active energy rays are shown in table 4 below, and the measurement results after irradiation with active energy rays are shown in table 5 below.

The ratio of the value of the tensile stress at each stretching to the value of the tensile stress at the 1 st stretching is also shown in tables 4 and 5 below.

(Tensile storage modulus)

As described in the above embodiments, the dicing tape according to each example was measured for the tensile storage modulus at the 1 st stretch, the tensile storage modulus at the 2 nd stretch, and the tensile storage modulus at the 3 rd stretch.

The tensile storage modulus was also measured for both the case before and after irradiation with active energy rays.

In tables 4 and 5 below, the ratio of the value of the tensile storage modulus at each stretch to the value of the tensile storage modulus at the 1 st stretch is also shown.

(Yield stress)

For the dicing tape described in each example, as described in the above embodiments, the yield stress at the 1 st stretching was obtained.

The yield stress at the 1 st stretching was also obtained for both cases before and after irradiation with active energy rays.

In tables 4 and 5 below, the ratio of the tensile stress to the yield stress at the 1 st stretching is shown, and the ratio of the tensile stress to the yield stress at the 3 rd stretching is also shown.

(Elongation at yield)

For each example, the yield elongation at 1 st stretch was obtained as described in the above description of the embodiment.

The elongation at yield at the 1 st stretching was also obtained for both cases before and after irradiation with active energy rays.

TABLE 4

TABLE 5

As shown in tables 4 and 5, it can be seen that: the value of the tensile stress at the 3 rd stretching was not significantly different from the value of the tensile stress at the 1 st stretching, and the tensile stress at the 3 rd stretching also showed a higher value of 7N/10mm or more.

This can be considered as follows: in the process of performing both the die bonding process and the expanding process by using the die bonding apparatus, the adhesion between adjacent die bonding layers that are stuck together can be sufficiently released.

Claims

1. A dicing tape comprising a base material and an adhesive layer laminated on the base material,

The stretching of the dicing tape in the plane direction at a speed of 500mm/min to a length of 180% of the original length and the recovering of the dicing tape after stretching are alternately repeated 3 times, and the value of the stretching stress measured at the 3 rd stretching is 7N/10mm or more.

2. The dicing tape according to claim 1, wherein when the stretching and the recovering are alternately repeated 3 times, a value of a tensile storage modulus measured at the 3 rd stretching is 18N/mm ² or more.

3. The dicing tape according to claim 1 or 2, wherein, when the stretching and the recovering are alternately repeated 3 times,

4. The dicing tape of claim 2, wherein, when the stretching and the recovering are alternately repeated 3 times,

5. The dicing tape according to claim 1, wherein the adhesive layer contains a curing component that is cured by irradiation of active energy rays,

Before and after the irradiation of the active energy rays,

6. The dicing tape according to claim 5, wherein before and after the irradiation of the active energy rays,

7. The dicing tape according to claim 5 or 6, wherein before and after irradiation of the active energy ray,

When the stretching and the recovering are alternately repeated 3 times,

8. The dicing tape according to claim 6, wherein before and after the irradiation of the active energy rays,

When the stretching and the recovering are alternately repeated 3 times,