CN111554610A - Microcavity etching substrate holding device and microcavity etching system - Google Patents
Microcavity etching substrate holding device and microcavity etching system Download PDFInfo
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- CN111554610A CN111554610A CN202010300852.8A CN202010300852A CN111554610A CN 111554610 A CN111554610 A CN 111554610A CN 202010300852 A CN202010300852 A CN 202010300852A CN 111554610 A CN111554610 A CN 111554610A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The application relates to a microcavity etching substrate holding device and a microcavity etching system. The micro-cavity etching substrate containing device comprises a base, a wafer containing frame and a rotation control unit. The wafer placing frame is rotatably arranged on the base, a wafer placing groove is formed in the wafer placing frame, and the wafer placing groove is used for placing a substrate material. The rotation control unit is connected with the film placing frame and used for controlling the film placing frame to rotate at a preset rotating speed. When the micro-cavity etching substrate containing device is used for etching, the micro-cavity etching substrate containing device is placed in an etching cavity, a substrate material to be etched by xenon fluoride is placed in the wafer placing groove, and the rotation control unit is started, so that the substrate material is driven by the wafer placing frame to slowly rotate at a constant speed. The rotation of the substrate material enables the xenon fluoride gas to uniformly contact the etched microcavity, and the roundness of etching the microcavity under low humidity and high xenon fluoride concentration can be effectively improved, so that the ring-core microcavity has a higher Q value.
Description
Technical Field
The application relates to the technical field of semiconductor optoelectronic devices, in particular to a microcavity etching substrate containing device and a microcavity etching system.
Background
The quality factor Q of the key parameter of the ring-core type microcavity is influenced by the roundness of the silicon-based supporting cylinder. In the process of forming the silicon-based support pillar, xenon fluoride powder is generally used as a raw material for dry etching, and is uniformly dispersed in a circular etching cavity through nitrogen pressurization and uniformly contacted with a silicon base, so that part of the silicon base is etched to form the silicon-based support pillar. In this process, the roundness of the silicon-based support posts can be affected in two ways: the dispersion uniformity of the xenon fluoride powder and the asymmetry of the silicon wafer; both of them can cause the support pillars of the ring-core microcavity to have non-circular patterns such as squares, thereby affecting the quality factor of the microcavity.
In order to alleviate the consequences of both of the above-mentioned non-uniformities, a common approach is to reduce the amount of xenon fluoride etching. One way is to increase the air humidity in the etching chamber, because the chemical reaction between the xenon fluoride and the water vapor in the air will lose the etching capability to the silicon substrate after the hydrogen fluoride is generated, so that the low-concentration xenon fluoride can be more easily and uniformly distributed in the etching chamber, and the high roundness of the silicon substrate support column can be realized by sacrificing the etching speed. The second way is to reduce the amount of xenon fluoride powder ejected by the etching system. The method lacks certain stability and can not ensure ideal etching results every time.
Disclosure of Invention
Based on the above, the application provides a microcavity etching substrate holding device and a microcavity etching system, so that a microcavity can be etched more uniformly in the reaction process.
A microcavity etching substrate holding device, comprising:
a base;
the wafer placing frame is rotatably arranged on the base and provided with a wafer placing groove, and the wafer placing groove is used for placing a substrate material; and
and the rotation control unit is connected with the film placing frame and used for controlling the film placing frame to rotate at a preset rotating speed.
In one embodiment, the rack comprises:
the rotating shaft is rotatably arranged on the base, and one end of the rotating shaft is rotatably connected with the rotating control unit; and
the rotating platform is fixedly connected with the other end of the rotating shaft, and the sheet placing groove is formed in one surface, far away from the base, of the rotating platform.
In one embodiment, the sheet placing groove is arranged at the center of the rotating table.
In one embodiment, the sheet placing groove penetrates through the rotating table along the radial direction of the rotating table.
In one embodiment, the rotating platform is fixedly connected with the other end of the rotating shaft in a welding or threaded manner.
In one embodiment, the number of the film placing frames is multiple, and the multiple film placing frames are arranged on the base at equal intervals.
In one embodiment, the number of the wafer placing racks is six, and the connecting line of the centers of the six wafer placing racks is a regular hexagon.
In one embodiment, the rotation control unit includes:
the rotating motor is connected with the rotating shaft;
and the motor control circuit is electrically connected with the rotating motor and used for controlling the rotating motor to rotate at a preset rotating speed.
In one embodiment, the base has a receiving cavity, and the rotation control unit is disposed in the receiving cavity.
In one embodiment, the base is a hollow cylinder, and the material of the base is stainless steel.
A microcavity etching system, comprising:
the microcavity etching substrate holding device of any one of the above embodiments; and
and the etching device is provided with an etching cavity, and the micro-cavity etching substrate containing device is arranged in the etching cavity.
The micro-cavity etching substrate containing device comprises a base, a wafer containing frame and a rotation control unit. The wafer placing frame is rotatably arranged on the base, a wafer placing groove is formed in the wafer placing frame, and the wafer placing groove is used for placing a substrate material. The rotation control unit is connected with the film placing frame and used for controlling the film placing frame to rotate at a preset rotating speed. When the micro-cavity etching substrate containing device is used for etching, the micro-cavity etching substrate containing device is placed in an etching cavity, a substrate material to be etched by xenon fluoride is placed in the wafer placing groove, and the rotation control unit is started, so that the substrate material is driven by the wafer placing frame to slowly rotate at a constant speed. The rotation of the substrate material enables the xenon fluoride gas to uniformly contact the etched microcavity, and the roundness of etching the microcavity under low humidity and high xenon fluoride concentration can be effectively improved, so that the ring-core microcavity has a higher Q value.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of a microcavity etching substrate holding device according to one embodiment of the present application;
FIG. 2 is a front view of a film cassette according to one embodiment of the present application;
FIG. 3 is a front view of a microcavity etching substrate holding device according to one embodiment of the present application;
FIG. 4 is a top view of a microcavity etching substrate holding device according to one embodiment of the present application;
FIG. 5 is a front view of a microcavity etching substrate holding device according to one embodiment of the present application;
FIG. 6 is a block diagram of a microcavity etching system according to one embodiment of the present application.
Description of the main element reference numerals
10. A microcavity etching substrate holding device; 110. a base; 111. an accommodating chamber; 120. a film placing frame; 121. a slice placing groove; 122. a rotating shaft; 123. a rotating table; 130. a rotation control unit; 131. a rotating electric machine; 132. a motor control circuit; 20. a microcavity etching system; 200. an etching device; 210. and etching the cavity.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first acquisition module may be referred to as a second acquisition module, and similarly, a second acquisition module may be referred to as a first acquisition module, without departing from the scope of the present application. The first acquisition module and the second acquisition module are both acquisition modules, but are not the same acquisition module.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The requirement for laboratory humidity is higher among the traditional scheme, needs to improve air humidity through the humidifier of great power to about 40% to at the in-process of sculpture, xenon fluoride has more waste, and the loss appears very easily in the operation of sculpture machine under the condition of high humidity, also can lead to the waste of time simultaneously. And the reduction of the amount of xenon fluoride powder does not ensure the roundness of the silicon-based support pillars, and it takes a lot of time and cost, which is not favorable for mass production.
In view of the above, referring to FIG. 1, one embodiment of the present application provides a microcavity etching substrate holder 10. The micro-chamber etching substrate holding apparatus 10 includes a susceptor 110, a rack 120, and a rotation control unit 130.
The sheet holder 120 is rotatably disposed on the base 110. The sheet placing rack 120 is provided with a sheet placing groove 121. The sheet placing groove 121 is used for placing a substrate material. The rotation control unit 130 is connected to the cassette 120. The rotation control unit 130 is configured to control the rack 120 to rotate at a preset rotation speed.
It is to be understood that the shape and material of the base 110 are not particularly limited as long as the base 110 can support. In an alternative embodiment, the material of the base 110 is stainless steel. The base 110 is in the shape of a cylinder, a table body, or other shapes.
It is understood that the shape and material of the cassette 120 are not particularly limited as long as the cassette 120 can hold the substrate material. The number of the sheet racks 120 is not particularly limited. The substrate material is used for preparing the ring-core micro-cavity. The substrate material may be a silicon wafer. In an alternative embodiment, the cassette 120 may be circular, square, or other irregular shape. The position of the sheet placing groove 121 is not particularly limited. In an alternative embodiment, the film placing groove 121 is located on the central axis of the film placing frame 120. In an alternative embodiment, the base 110 is a hollow steel cylinder with a diameter of 150mm and a height of 40mm, and the holder 120 has a diameter of 40 mm. The width of the sheet placing groove 121 is 7mm, and the length thereof is 40 mm. The rotatable connection between the sheet rack 120 and the base 110 is not particularly limited, as long as the sheet rack 120 can rotate around the central axis of the sheet rack 120 on the base 110.
It is understood that the position and the specific structure of the rotation control unit 130 are not particularly limited as long as the rotation control unit 130 can control the cassette 120 to rotate at a certain speed. In an alternative embodiment, the rotation control unit 130 may control the cassette 120 to rotate at 360 degrees per minute. In an alternative embodiment, the rotation control unit 130 may be disposed in the base 110 in order to reduce the volume of the device and to facilitate portability.
In this embodiment, the micro-cavity etching substrate holding apparatus 10 includes a base 110, a wafer holder 120, and a rotation control unit 130. The sheet holder 120 is rotatably disposed on the base 110, the sheet holder 120 is provided with a sheet holding groove 121, and the sheet holding groove 121 is used for holding a substrate material. The rotation control unit 130 is connected to the rack 120 and configured to control the rack 120 to rotate at a preset rotation speed. When the micro-cavity etching substrate containing device 10 is used for etching, the micro-cavity etching substrate containing device is placed in the etching cavity 210, a substrate material to be etched by xenon fluoride is placed in the wafer placing groove 121, and the rotation control unit 130 is started, so that the substrate material is driven by the wafer placing frame 120 to slowly rotate at a constant speed. The rotation of the substrate material enables the xenon fluoride gas to uniformly contact the etched microcavity, and the roundness of etching the microcavity under low humidity and high xenon fluoride concentration can be effectively improved, so that the ring-core microcavity has a higher Q value.
Referring to fig. 2, in one embodiment, the rack 120 includes a rotating shaft 122 and a rotating table 123.
The rotating shaft 122 is rotatably disposed on the base 110, and one end of the rotating shaft is rotatably connected to the rotation control unit 130. The rotating platform 123 is fixedly connected to the other end of the rotating shaft 122. The sheet placing groove 121 is formed on a surface of the rotating platform 123 away from the base 110.
The rotation control unit 130 can control the rotation of the rotating shaft 122, and further control the rotation of the film holder 120. The rotating shaft 122 and the rotating platform 123 may be fixedly connected by welding, bonding, or screwing. The shape of the rotating platform 123 is circular, square or other irregular shapes. In an alternative embodiment, the sheet placing groove 121 is opened at the center of the rotating table 123. In an alternative embodiment, the sheet placing groove 121 extends through the rotating table 123 along a radial direction of the rotating table 123. Optionally, the extension direction of the sheet placing groove 121 passes through the center of the base 110. In this embodiment, the substrate material can be fixed on the rotary table 123 by the cooperation of the rotary shaft 122 and the rotary table 123.
Referring to fig. 3, in one embodiment, the number of the rack 120 is multiple, and the multiple racks 120 are disposed on the base 110 at equal intervals. In one alternative embodiment, the number of the sheet holders 120 is six, and the shape of the sheet holder 120 is circular. The connecting lines of the centers of the six sheet placing frames 120 are a regular hexagon. Referring to fig. 4, the base 110 may be a cylinder. The extension direction of the sheet placing groove 121 passes through the center of the base 110. In this embodiment, by using the above apparatus, etching of a plurality of base materials can be simultaneously achieved, and the roundness of each of the base materials can be ensured.
Referring to fig. 5, in one embodiment, the rotation control unit 130 includes a rotating electrical machine 131 and a motor control circuit 132.
The rotating motor 131 is connected to the rotating shaft 122. The motor control circuit 132 is electrically connected to the rotating electric machine 131. The motor control circuit 132 is configured to control the rotating motor 131 to rotate at a preset rotation speed.
In one of the alternative embodiments, the base 110 has a receiving cavity 111. Optionally, the base 110 is a hollow cylinder, and the material of the base 110 is stainless steel. The rotation control unit 130 is disposed in the accommodating chamber 111. When the rotation control unit 130 needs to be disposed in the accommodating cavity 111, the rotating motor 131 may be a micro motor. The micro motor is connected to each of the rotating shafts 122. When the power of the motor control circuit 132 is turned on, the rotating motor 131 drives each of the film shelves 120 to start to rotate slowly at a constant speed, so that the substrate material starts to rotate slowly at a constant speed in each of the film shelves 120. In this embodiment, the rotation control unit 130 is disposed in the accommodating cavity 111, so that space can be saved, and control over each of the rotating shafts 122 can be realized.
Referring to fig. 6, one embodiment of the present application provides a microcavity etching system 20. The micro-cavity etching system 20 comprises the micro-cavity etching substrate holding device 10 and the etching device 200 in any one of the above embodiments.
The etching apparatus 200 has an etching chamber 210. The micro-cavity etching substrate holding device 10 is placed in the etching chamber 210. The micro-cavity etching substrate holding apparatus 10 includes the base 110, the wafer holder 120 and the rotation control unit 130 according to any one of the above embodiments, which will not be described herein. The microcavity etching substrate holding device 10 is placed in the etching cavity 210, a silicon wafer to be etched by xenon fluoride is placed in the wafer placing groove 121, and a control circuit power supply of the rotation control unit 130 is turned on to enable the silicon wafer to slowly rotate in each wafer placing groove 121 at a constant speed. The etching chamber 210 is evacuated to a vacuum state to minimize the presence of water vapor therein, and then xenon fluoride is introduced to achieve uniform etching.
In this embodiment, the micro-cavity etching system 20 includes the micro-cavity etching substrate holding apparatus 10 and the etching apparatus 200 described in any of the above embodiments. The sheet holder 120 is rotatably disposed on the base 110, the sheet holder 120 is provided with a sheet holding groove 121, and the sheet holding groove 121 is used for holding a substrate material. The rotation control unit 130 is connected to the rack 120 and configured to control the rack 120 to rotate at a preset rotation speed. When the micro-cavity etching substrate containing device 10 is used for etching, the micro-cavity etching substrate containing device is placed in the etching cavity 210, a substrate material to be etched by xenon fluoride is placed in the wafer placing groove 121, and the rotation control unit 130 is started, so that the substrate material is driven by the wafer placing frame 120 to slowly rotate at a constant speed. The rotation of the substrate material enables the xenon fluoride gas to uniformly contact the etched microcavity, and the roundness of etching the microcavity under low humidity and high xenon fluoride concentration can be effectively improved, so that the ring-core microcavity has a higher Q value.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A microcavity etching substrate holding device, comprising:
a base (110);
the wafer placing frame (120) is rotatably arranged on the base (110), a wafer placing groove (121) is formed in the wafer placing frame (120), and the wafer placing groove (121) is used for placing a substrate material; and
and the rotation control unit (130) is connected with the film placing rack (120) and is used for controlling the film placing rack (120) to rotate at a preset rotating speed.
2. The microcavity etching substrate holding device according to claim 1, wherein the wafer holder (120) includes:
the rotating shaft (122) is rotatably arranged on the base (110), and one end of the rotating shaft is rotatably connected with the rotating control unit (130); and
and the rotating platform (123) is fixedly connected with the other end of the rotating shaft (122), and the sheet placing groove (121) is formed in one surface, far away from the base (110), of the rotating platform (123).
3. Microcavity etching substrate holding device according to claim 2, characterized in that the wafer placement groove (121) opens at a central position of the rotary stage (123).
4. Microcavity etching substrate holding device according to claim 3, wherein the wafer placement groove (121) extends through the rotary stage (123) in a radial direction of the rotary stage (123).
5. The microcavity etching substrate holding device according to claim 4, wherein the rotary table (123) is fixedly connected to the other end of the rotary shaft (122) by welding or screwing.
6. The microcavity etching substrate holding device according to claim 5, wherein the number of the rack (120) is plural, and the plurality of racks (120) are disposed at equal intervals on the base (110).
7. The microcavity etching substrate holding device according to claim 6, wherein the number of the rack (120) is six, and a line connecting centers of the six rack (120) is a regular hexagon.
8. The microcavity etching substrate holding device according to claim 7, wherein the rotation control unit (130) comprises:
a rotating motor (131) connected to the rotating shaft (122); and
and the motor control circuit (132) is electrically connected with the rotating motor (131) and is used for controlling the rotating motor (131) to rotate at a preset rotating speed.
9. The microcavity etching substrate holding device according to claim 8, wherein the base (110) has a holding chamber (111), and the rotation control unit (130) is provided to the holding chamber (111).
10. The microcavity etching substrate holding device according to claim 9, wherein the base (110) is a hollow cylinder, and the material of the base (110) is stainless steel.
11. A microcavity etching system, comprising:
the microcavity etching substrate holding device (10) according to any one of claims 1 to 10; and
an etching device (200) having an etching chamber (210), the micro-cavity etching substrate holding device (10) being disposed in the etching chamber (210).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010300852.8A CN111554610A (en) | 2020-04-16 | 2020-04-16 | Microcavity etching substrate holding device and microcavity etching system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010300852.8A CN111554610A (en) | 2020-04-16 | 2020-04-16 | Microcavity etching substrate holding device and microcavity etching system |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121075A (en) * | 2004-10-14 | 2006-05-11 | Kokuryu So | High-precision etching method for wafer |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN102086515A (en) * | 2009-12-02 | 2011-06-08 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN105990082A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Semiconductor etching device |
-
2020
- 2020-04-16 CN CN202010300852.8A patent/CN111554610A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121075A (en) * | 2004-10-14 | 2006-05-11 | Kokuryu So | High-precision etching method for wafer |
| CN102086515A (en) * | 2009-12-02 | 2011-06-08 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN105990082A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Semiconductor etching device |
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