JPS6024018A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS6024018A JPS6024018A JP13081283A JP13081283A JPS6024018A JP S6024018 A JPS6024018 A JP S6024018A JP 13081283 A JP13081283 A JP 13081283A JP 13081283 A JP13081283 A JP 13081283A JP S6024018 A JPS6024018 A JP S6024018A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- etching
- processing chamber
- plasma
- etching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ドライエツチング方法に係り、特に複数枚の
ウェハな同一処理室にて同時にドライエツチングするの
に好適なドライエツチング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a dry etching method, and particularly to a dry etching method suitable for simultaneously dry etching a plurality of wafers in the same processing chamber.
複数枚のウェハな同一処理室にて同時にドライエツチン
グする半導体製造装置では、真空排気されると共にエツ
チングガスが導入される処理室に所定枚数搬入されたウ
ェハは、対向電極と所定の放電空間を有し対向して処理
室に内設されると共に、例えば高周波電源（以下、ＲＴ
電源と略）が接続されたウェハ載置用電極（以下、テー
ブルと略）の所定位置にそれぞれ載置される。その後、
これらウェハは、エツチングガスへのＲＦ印加により生
じたプラズマによりエツチング処理されるが、この際、
筑来は、テーブルを一方向のみに回転している。In semiconductor manufacturing equipment that simultaneously dry-etches multiple wafers in the same processing chamber, a predetermined number of wafers are carried into the processing chamber, which is evacuated and introduced into the etching gas, and has a counter electrode and a predetermined discharge space. For example, a high frequency power source (hereinafter referred to as RT
Each of the wafers is placed at a predetermined position on a wafer mounting electrode (hereinafter referred to as a table) connected to a power supply. after that,
These wafers are etched by plasma generated by applying RF to etching gas, but at this time,
Chikuri rotates the table in only one direction.
このようにエツチング処理時にテーブルを一方向のみに
回転させているため、プラズマのウェハへの接触方向が
不均等になりエツチングの均一性が低下するといった欠
点がありた。Since the table is rotated in only one direction during the etching process, the plasma comes into contact with the wafer in an uneven direction, resulting in a reduction in the uniformity of etching.
本発明の目的は、プラズマのウェハへの接触方向を均等
化することで、エツチングの均一性を向上できるドライ
エツチング方法を提供することにある。An object of the present invention is to provide a dry etching method that can improve etching uniformity by equalizing the direction of plasma contact with a wafer.
本発明は、同一処理室にて同時にドライエツチングされ
る複数枚のウェハをエツチング処理期間中に正逆転させ
ることを特徴とするもので、エツチング処理期間中のウ
ェハの正逆転によりプラズマのウェハへの接触方向を均
等化しようとするものである。The present invention is characterized in that a plurality of wafers that are simultaneously dry-etched in the same processing chamber are rotated in the forward and reverse directions during the etching process. This is intended to equalize the contact direction.
本発明の一実施例を図面により説明する。 An embodiment of the present invention will be described with reference to the drawings.
図面で、真空排気装置（図示省略）とエツチングガス供
給袋！（図示省略）とが連結された処理室１０には、対
向電極（図示省略）とテーブル１１とが所定の放電空間
加を有し、この場合、上下方向に対向して内設されてい
る。The drawing shows the vacuum exhaust system (not shown) and the etching gas supply bag! A counter electrode (not shown) and a table 11 have a predetermined discharge space, and in this case, are disposed inside facing each other in the vertical direction.
テーブル１１の中央には、軸側が垂設され、処理室１０
は、架台３１に設けられている。軸（資）の途中には、
磁性シール材ｎとベアリングおが環装され、磁性シール
材３２とベアリングおとは、ベアリングケースあに収納
されている。ベアリングケースＭは、カバーあを介し処
理室ＩＯと架台３１に固設されている一軸（資）の下端
部には、ウオームＩと噛合してウオーム歯車荀がナヴト
あて取付けられている。In the center of the table 11, the shaft side is vertically installed, and the processing chamber 10
is provided on the pedestal 31. In the middle of the axis,
The magnetic sealing material n and the bearing O are encased, and the magnetic sealing material 32 and the bearing O are housed in the bearing case A. In the bearing case M, a worm gear shaft is attached to the lower end of a single shaft fixed to the processing chamber IO and the mount 31 through the cover, so as to mesh with the worm I.
ウオームあ は正逆転駆動手段、例えば、パルスモータ
銀に連結され、ウオームあとウオーム歯車３７は、ギヤ
ケース旬に収納されている。なお、軸（資）には、ＲＦ
電源（図示省略）が接続されている。The worm gear 37 is connected to a forward/reverse drive means such as a pulse motor, and the worm gear 37 is housed in a gear case. In addition, the axis (capital) has RF
A power source (not shown) is connected.
例えば、真空排気装置で真空排気された処理室１０には
、所定枚数のウェハ凹が搬入され、このウェハ関は、テ
ーブル１１の所定位置にそれぞれ載置される。その後、
処理室１０には、エツチングガス供給装置より所定のエ
ツチングガスが供給されると共に真空排気装置により処
理室１０は所定のエツチング圧力に調整される。この状
態で、放電空間加に存在するエツチングガスにＲＦを印
加することで工ｙｙ−ングガスはプラズマ化され、この
プラズマによりウェハ父はエツチング処理される。For example, a predetermined number of wafer recesses are carried into a processing chamber 10 that has been evacuated by an evacuation device, and these wafer recesses are each placed at a predetermined position on the table 11 . after that,
A predetermined etching gas is supplied to the processing chamber 10 by an etching gas supply device, and the processing chamber 10 is adjusted to a predetermined etching pressure by a vacuum exhaust device. In this state, by applying RF to the etching gas present in the discharge space, the etching gas is turned into plasma, and the wafer father is etched by this plasma.
この場合、エツチング処理期間中にパルスモータ刃でテ
ーブル１１を正逆転させる。また、正逆転の周期は、例
えば、タイマー（図示省略）により調節する。In this case, the table 11 is rotated forward and backward using a pulse motor blade during the etching process. Further, the forward/reverse cycle is adjusted by, for example, a timer (not shown).
本実施例のようなドライエツチング方法では、次のよう
な効果が得られる。The dry etching method of this embodiment provides the following effects.
（１） テーブルに複数枚載置されたウェハのエツチン
グ処理期間中にテーブルを”正逆転させているので、エ
ツチング処理時のプラズマのウェハへの接触方向を均等
化でき、エツチングの均一性を向上できる。(1) Since the table is rotated forward and reverse during the etching process for multiple wafers placed on the table, the direction of plasma contact with the wafers during the etching process can be equalized, improving the uniformity of etching. can.
（２） テーブルに複数枚載置されたウェハのエツチン
グ処理期間中にテーブルを正逆転させているので、放電
空間でのエツチングガスな均一化できる。(2) Since the table is rotated forward and reverse during the etching process for a plurality of wafers placed on the table, the etching gas in the discharge space can be made uniform.
本発明は、以上説明したように、同一処理室にをエツチ
ング期間中に正逆転させることで、エラΔ
チング処理時のプラズマのウェハへの接触方向を均等化
できるので、エツチングの均一性を向上できる効果があ
る。As explained above, in the present invention, by rotating the same processing chamber forward and backward during the etching period, it is possible to equalize the direction in which the plasma contacts the wafer during the error Δ etching process, thereby improving the uniformity of etching. There is an effect that can be done.
図面は、本発明を実施した半導体製造装置の一例を示す
部分縦断面図である。The drawing is a partial vertical cross-sectional view showing an example of a semiconductor manufacturing apparatus embodying the present invention.
Claims (1)
ングする方法において、エツチング処理期間中に前記ウ
ェハな正逆転させることを特徴とするドライエツチング
方法。 ２、前記処理室に内設されると共に、前記ウェハが所定
位置に載置されるウェハ載置用電極をエツチング処理期
間中に正逆転させる特許請求の範囲第１項記載のドライ
エツチング方法。[Scope of Claim] A dry etching method in which a plurality of wafers are dry-etched simultaneously in the same processing chamber, the wafers being rotated forward and reverse during the etching process. 2. The dry etching method according to claim 1, wherein a wafer mounting electrode, which is installed in the processing chamber and on which the wafer is mounted at a predetermined position, is rotated forward and backward during the etching process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13081283A JPS6024018A (en) | 1983-07-20 | 1983-07-20 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13081283A JPS6024018A (en) | 1983-07-20 | 1983-07-20 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6024018A true JPS6024018A (en) | 1985-02-06 |
Family
ID=15043283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13081283A Pending JPS6024018A (en) | 1983-07-20 | 1983-07-20 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024018A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261375B1 (en) * | 1999-05-19 | 2001-07-17 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6323134B1 (en) | 1997-11-20 | 2001-11-27 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6749764B1 (en) | 2000-11-14 | 2004-06-15 | Tru-Si Technologies, Inc. | Plasma processing comprising three rotational motions of an article being processed |
-
1983
- 1983-07-20 JP JP13081283A patent/JPS6024018A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6323134B1 (en) | 1997-11-20 | 2001-11-27 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6627039B1 (en) | 1997-11-20 | 2003-09-30 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6261375B1 (en) * | 1999-05-19 | 2001-07-17 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6287976B1 (en) * | 1999-05-19 | 2001-09-11 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6749764B1 (en) | 2000-11-14 | 2004-06-15 | Tru-Si Technologies, Inc. | Plasma processing comprising three rotational motions of an article being processed |
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