CN211471641U - Silicon electrode cleaning jig - Google Patents
Silicon electrode cleaning jig Download PDFInfo
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- CN211471641U CN211471641U CN201921994631.4U CN201921994631U CN211471641U CN 211471641 U CN211471641 U CN 211471641U CN 201921994631 U CN201921994631 U CN 201921994631U CN 211471641 U CN211471641 U CN 211471641U
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Abstract
The utility model discloses a silicon electrode cleaning jig, including flying piece and annular disc, be equipped with the couple on the flying piece, the annular disc is including mutually supporting and two semi-rings of releasable connection, and two semi-ring bilateral symmetry arrange is equipped with the support frame on the semi-ring, be equipped with on the support frame with the pivot of couple adaptation, be equipped with the fixed slot that is used for fixed silicon electrode between two semi-rings. The utility model provides a silicon electrode washs tool can the rotatory etching of developments, avoids the contact colour difference and the uneven problem of sculpture that traditional fixed basket of flowers sculpture brought.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor silicon material manufacture technique and specifically relates to a silicon electrode washs tool is related to.
Background
The main manufacturing processes of modern very large scale integrated circuits include thin film preparation (CVD, PVD), diffusion doping, ion implantation, high temperature processes (oxidation, annealing), lithography, etching, etc. The etching process is an important process in the wafer processing process, and is mainly used for selectively removing unwanted materials from the surface of a silicon wafer by a chemical or physical method. Wherein, the dry etching is to bombard the surface of the silicon wafer in plasma gas.
The silicon electrode, also called plasma diverter plate, is a silicon wafer material with a certain thickness and a large number of micropores on the structure, and is used for dispersing plasma gas so as to make the plasma gas uniformly bombard the surface of a wafer. With the increasingly fine layout design of very large scale integrated circuits, the current wafer processing technology has generally entered the nanometer era, and thus very high requirements are put forward on the cleanliness in the whole process. Since the silicon electrode and the wafer are in direct contact in the dry etching machine cavity, the silicon electrode also needs to have higher cleanliness to avoid pollution to the wafer in the dry etching process. The cleanliness of the silicon electrode is also characterized in that the main surface of the silicon electrode cannot be polluted by more particles, metals, organic matters and the like on the surface and in micropores of the silicon electrode.
In the existing manufacturing process of the silicon electrode, the shape processing is mainly completed by adopting a mechanical processing mode, then the surface and micropore cleaning treatment is carried out by adopting a chemical corrosion mode, and the silicon electrode and chemical acid liquid have violent chemical reaction in the chemical corrosion process. At present, most silicon electrode manufacturing processes use a basket jig to realize silicon electrode corrosion cleaning, and due to the fact that the silicon electrode is large in overall dimension and has characteristic shapes such as micropores, the problems of chromatic aberration and jig contact imprinting caused by uneven acid liquor corrosion exist in the acid liquor corrosion process. Therefore, it is necessary to design a tool to achieve uniform etching cleaning of the silicon electrode in the acid solution.
Chinese patent application publication No. CN207651451U, published as 24.07.2018, entitled "silicon wafer single-sided etching device", discloses a silicon wafer single-sided etching device, which comprises an etching chamber, a circulating pump and a liquid medicine pipeline; a rotary worktable for bearing the silicon wafer is arranged in the etching chamber, and a spraying device is arranged above the rotary worktable; the spraying device is communicated with the liquid medicine pipeline, the bottom of the etching chamber is provided with a water outlet, and the water outlet is communicated with the circulating pump through the liquid medicine pipeline; the rotary worktable comprises a rotary driving device, a vacuumizing device and a supporting plate, wherein the supporting plate is connected with a rotating shaft of the rotary driving device so that the supporting plate rotates along with the rotation of the rotating shaft, the supporting plate comprises a supporting plate body, a cavity and a vacuum adsorption hole, the cavity is located inside the supporting plate body, the vacuum adsorption hole is connected with the cavity, the vacuum adsorption hole penetrates through the upper surface of the supporting plate body, and the cavity is communicated with the vacuumizing device. However, the above-mentioned techniques can only etch a single surface of a silicon wafer, and are not suitable for etching both surfaces of a silicon electrode simultaneously.
Disclosure of Invention
The utility model discloses an overcome among the prior art silicon electrode and corrode inhomogeneous problem in the acidizing fluid, provide a silicon electrode washs tool, can the dynamic rotation etch, avoid the contact colour difference and the uneven problem of sculpture that traditional fixed basket of flowers sculpture brought.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the utility model provides a silicon electrode washs tool, includes flying piece and annular disc, is equipped with the couple on the flying piece, and annular disc is including mutually supporting and two semi-rings of releasable connection, and two semi-ring bilateral symmetry arrange is equipped with the support frame on the semi-ring, be equipped with on the support frame with the pivot of couple adaptation, be equipped with the fixed slot that is used for fixed silicon electrode between two semi-rings.
According to the technical scheme, the hanging piece and the annular disc form a vertical rotating wheel structure, the two half rings form the annular disc, the silicon electrode is placed in the fixing groove between the two half rings, and the silicon electrode can be fixed and clamped. After the silicon electrode is placed in the annular disc and fixed, the rotating shaft on the annular disc is clamped into the clamping groove of the hook, and the hanging piece is lifted by hand, so that the silicon electrode can be placed in the mixed acid solution for corrosion cleaning. The annular disc can rotate only by poking the annular disc by hands, dynamic rotary etching can be performed, and the problems of contact color difference and uneven etching caused by traditional fixed type flower basket etching are solved.
Preferably, one side of the rotating shaft, which is far away from the support frame, is provided with a first shaft shoulder. The first shaft shoulder can prevent the annular disc from falling off the hook when rotating.
Preferably, a second shoulder is arranged on one side of the rotating shaft, which is close to the support frame; the first shaft shoulder, the rotating shaft and the second shaft shoulder form a forming shaft structure. The second shaft shoulder can avoid the hook to be in direct contact with the support frame, and the I-shaped shaft structure can avoid the annular disc from shaking left and right.
Preferably, a first annular groove is formed in the contact surface of the half ring and the other half ring, a second annular groove is formed in the bottom of the first annular groove, the top diameter of the first annular groove is larger than the bottom diameter of the first annular groove, the top diameter of the second annular groove is larger than the bottom diameter of the second annular groove, the side wall of the first annular groove is connected with the side wall of the second annular groove, and the included angle between the side wall of the first annular groove and the contact surface is larger than the included angle between the side wall of the second annular groove and. In the structure, the first ring groove and the second ring groove of the two half rings are spliced to form a double-layer V-shaped groove, namely the bottom of the upper-layer V-shaped groove is provided with a V-shaped groove with a larger slope; the double-layer V-shaped groove structure can fix a silicon electrode, can avoid the contact between the upper surface and the lower surface of an electrode round cake material and an excircle and a jig, and finally, the double-layer V-shaped groove is in line contact with the outer surface of the silicon electrode to form the minimum contact area, so that the etching is more sufficient, and the problems of appearance etching color difference and contact imprinting are avoided.
Preferably, the included angle between the side wall of the first ring groove and the contact surface is 70-85 degrees; the included angle between the side wall of the second ring groove and the contact surface is 25-45 degrees.
Preferably, the number of the support frames is three, the three support frames are uniformly distributed on the semi-rings, the support frames are provided with stand columns, and the support frames are fixed with the semi-rings through the stand columns. The support frame evenly distributed can make annular disc overall structure more even on annular disc, and is more level and smooth when annular disc rotates. The support frame can be higher than the surface of the annular disc by the upright column to form a hollow design, and the design avoids the interference of the support frame on the contact of acid liquor on the upper surface and the lower surface of the silicon electrode when the silicon electrode rotates in the acid liquor, so that the acid liquor can be uniformly contacted with the surface of the silicon electrode to the maximum extent.
Preferably, the half rings are provided with threaded holes, the two half rings are connected through bolts, and the bolts penetrate through the threaded holes. The threaded connection structure is simple, and the silicon electrode is convenient to disassemble and assemble.
Preferably, the threaded hole is arranged at the center of two adjacent support frames. Each screw hole on the surface of the annular disc and each supporting bracket form an included angle of 60 degrees, the included angles are staggered, and the screw holes are uniformly distributed on the surface of the annular disc, so that the two semi-rings are clamped more uniformly, and the disassembly and the assembly are convenient.
Preferably, the hook is provided with a clamping groove for placing the rotating shaft. The clamping groove has a certain depth, the annular disc can be stably hung in the clamping groove, and the rotation of the circular wheel can be realized only by manually stirring the annular disc.
Preferably, the material of the suspension member and the annular disk is polypropylene. The material can resist the corrosion of acid, alkali, salt solution and various organic solvents at the temperature of below 80 ℃, and can not be damaged in the long-time corrosion process of the acid solution.
The utility model has the advantages that: (1) by adopting the vertical rotating wheel structure, dynamic rotary etching can be realized, and the problems of contact chromatic aberration and uneven etching caused by the traditional fixed flower basket etching are avoided; (2) the double-layer V-shaped groove design of the annular disc avoids the contact between the upper surface and the lower surface of the silicon electrode and the side surface of the excircle and a jig, and ensures full etching; (3) due to the hollow design of the disc fixing support, uneven scouring of acid liquid on the surface of the silicon electrode when the jig rotates is reduced; (4) the annular disc and the hanging piece are matched with the hook clamping groove through the rotating shaft, and the jig is convenient and fast to assemble and disassemble.
Drawings
Fig. 1 is a schematic structural diagram of the present invention;
fig. 2 is a cross-sectional view of the ring-shaped disk of the present invention.
In the figure: the suspension part 1, the hook 1.1, the clamping groove 1.2, the annular disc 2, the semi-ring 2.1, the support frame 2.2, the rotating shaft 2.3, the fixing groove 2.4, the first annular groove 2.4.1, the second annular groove 2.4.2, the first shaft shoulder 2.5, the second shaft shoulder 2.6, the threaded hole 2.7 and the upright column 2.8.
Detailed Description
The invention is further described with reference to the accompanying drawings and specific embodiments.
Example 1:
as shown in fig. 1 and 2, a silicon electrode cleaning jig comprises a suspension member 1 and a ring-shaped disc 2, wherein the suspension member 1 and the ring-shaped disc 2 are made of polypropylene; a hook 1.1 is arranged on the hanging piece 1, and a clamping groove 1.2 for placing a rotating shaft 2.3 is arranged on the hook 1.1; the annular disc 2 comprises two half rings 2.1 which are matched with each other and detachably connected, the two half rings 2.1 are arranged in a bilateral symmetry mode, threaded holes 2.7 are formed in the half rings 2.1, the two half rings 2.1 are connected through bolts, and the bolts penetrate through the threaded holes 2.7; three support frames 2.2 are arranged on the semi-ring 2.1, the three support frames 2.2 are uniformly distributed on the semi-ring 2.1, a vertical column 2.8 is arranged on the support frame 2.2, and the support frame 2.2 is fixed with the semi-ring 2.1 through the vertical column 2.8; the width of the support frame 2.2 is 30mm, and the height of the upright post 2.8 is 50 mm; the threaded hole 2.7 is arranged in the positive center of two adjacent support frames 2.2; a rotating shaft 2.3 matched with the hook 1.1 is arranged on the support frame 2.2, a first shaft shoulder 2.5 is arranged on one side of the rotating shaft 2.3 far away from the support frame 2.2, and a second shaft shoulder 2.6 is arranged on one side of the rotating shaft 2.3 close to the support frame 2.2; the first shoulder 2.5, the shaft 2.3 and the second shoulder 2.6 form an i-shaped shaft structure; a first ring groove 2.4.1 is arranged on the contact surface of the half ring 2.1 and the other half ring 2.1, a second ring groove 2.4.2 is arranged at the bottom of the first ring groove 2.4.1, the top diameter of the first ring groove 2.4.1 is larger than the bottom diameter, the top diameter of the second ring groove 2.4.2 is larger than the bottom diameter, the side wall of the first ring groove 2.4.1 is connected with the side wall of the second ring groove 2.4.2, the included angle between the side wall of the first ring groove 2.4.1 and the contact surface is 80 degrees, the included angle between the side wall of the second ring groove 2.4.2 and the contact surface is 35 degrees, and the first ring groove 2.4.1 and the second ring groove 2.4.2 of the two half rings 2.1 are spliced to form a fixing groove 2.4 for fixing a; the structure of the fixed groove 2.4 is a double-layer V-shaped groove, namely, the bottom of the upper layer V-shaped groove is provided with a V-shaped groove with a larger slope.
In the technical scheme, the hanging piece 1 and the annular disc 2 form a vertical rotating wheel structure, the two semi-rings 2.1 are combined into the annular disc 2, and the silicon electrode is placed in the fixing groove 2.4 between the two semi-rings 2.1, so that the silicon electrode can be fixed and clamped. After the silicon electrode is placed in the annular disc 2 and fixed, the rotating shaft 2.3 on the annular disc 2 is clamped into the clamping groove 1.2 of the hook 1.1, the hanging part 1 is lifted by hand, and then the silicon electrode can be placed in the mixed acid solution for corrosion cleaning. The annular disc 2 can rotate only by poking the annular disc 2 by hands, dynamic rotary etching can be performed, and the problems of contact color difference and uneven etching caused by traditional fixed type flower basket etching are solved. The double-layer V-shaped groove structure can fix a silicon electrode, can avoid the contact between the upper surface and the lower surface of an electrode round cake material and an excircle and a jig, and finally, the double-layer V-shaped groove is in line contact with the outer surface of the silicon electrode to form the minimum contact area, so that the etching is more sufficient, and the problems of appearance etching color difference and contact imprinting are avoided.
The utility model has the advantages that: by adopting the vertical rotating wheel structure, dynamic rotary etching can be realized, and the problems of contact chromatic aberration and uneven etching caused by the traditional fixed flower basket etching are avoided; the double-layer V-shaped groove design of the annular disc avoids the contact between the upper surface and the lower surface of the silicon electrode and the side surface of the excircle and a jig, and ensures full etching; due to the hollow design of the disc fixing support, uneven scouring of acid liquid on the surface of the silicon electrode when the jig rotates is reduced; the annular disc and the hanging piece are matched with the hook clamping groove through the rotating shaft, and the jig is convenient and fast to assemble and disassemble.
Claims (8)
1. A silicon electrode cleaning jig is characterized by comprising a hanging part and an annular disc, wherein the hanging part is provided with a hook, the annular disc comprises two semi-rings which are matched with each other and detachably connected, the two semi-rings are arranged in bilateral symmetry, the semi-rings are provided with supporting frames, the supporting frames are provided with rotating shafts matched with the hook, and a fixing groove for fixing a silicon electrode is formed between the two semi-rings; a first shaft shoulder is arranged on one side of the rotating shaft, which is far away from the support frame; a second shaft shoulder is arranged on one side of the rotating shaft close to the support frame; the semi-ring is equipped with first annular on with the contact surface of another semi-ring, the bottom of first annular is equipped with the second annular, the top diameter of first annular is greater than the bottom diameter, the top diameter of second annular is greater than the bottom diameter, the lateral wall of first annular links to each other with the lateral wall of second annular, the contained angle of first annular lateral wall and contact surface is greater than the contained angle of second annular lateral wall and contact surface.
2. The silicon electrode cleaning tool of claim 1, wherein the first shoulder, the shaft, and the second shoulder form a tooling shaft structure.
3. The silicon electrode cleaning jig as claimed in claim 1, wherein an included angle between the side wall of the first ring groove and the contact surface is 70-85 °; the included angle between the side wall of the second ring groove and the contact surface is 25-45 degrees.
4. The silicon electrode cleaning jig as claimed in claim 1, 2 or 3, wherein the number of the support frames is three, the three support frames are uniformly distributed on the semi-rings, the support frames are provided with the columns, and the support frames are fixed with the semi-rings through the columns.
5. The silicon electrode cleaning fixture according to claim 4, wherein the semi-rings are provided with threaded holes, the two semi-rings are connected by bolts, and the bolts pass through the threaded holes.
6. The silicon electrode cleaning jig as claimed in claim 5, wherein the threaded hole is provided at the center of two adjacent support frames.
7. The silicon electrode cleaning jig according to claim 1, 2 or 3, wherein the hook is provided with a slot into which the rotating shaft can be inserted.
8. The silicon electrode cleaning fixture of claim 1, 2 or 3, wherein the suspension member and the annular disk are made of polypropylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921994631.4U CN211471641U (en) | 2019-11-18 | 2019-11-18 | Silicon electrode cleaning jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921994631.4U CN211471641U (en) | 2019-11-18 | 2019-11-18 | Silicon electrode cleaning jig |
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| Publication Number | Publication Date |
|---|---|
| CN211471641U true CN211471641U (en) | 2020-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201921994631.4U Active CN211471641U (en) | 2019-11-18 | 2019-11-18 | Silicon electrode cleaning jig |
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| CN (1) | CN211471641U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114054419A (en) * | 2021-11-17 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Silicon electrode cleaning device and cleaning method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114054419A (en) * | 2021-11-17 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Silicon electrode cleaning device and cleaning method |
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Effective date of registration: 20201218 Address after: Building C, no.668 BINKANG Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou dunyuan poly core semiconductor technology Co., Ltd Address before: 310053 668, 777, BINKANG Road, Binjiang District, Hangzhou, Zhejiang. Patentee before: HANGZHOU DAHE THERMO-MAGNETICS Co.,Ltd. |