CN220259900U - Tray structure of silicon wafer laser processing equipment - Google Patents
Tray structure of silicon wafer laser processing equipment Download PDFInfo
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- CN220259900U CN220259900U CN202321670390.4U CN202321670390U CN220259900U CN 220259900 U CN220259900 U CN 220259900U CN 202321670390 U CN202321670390 U CN 202321670390U CN 220259900 U CN220259900 U CN 220259900U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 125
- 235000012431 wafers Nutrition 0.000 description 26
- 238000001179 sorption measurement Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The utility model relates to the technical field of silicon wafer laser processing equipment, in particular to a tray structure of silicon wafer laser processing equipment, which comprises a ceramic micropore tray, wherein a micropore ceramic layer is arranged at the top of the ceramic micropore tray, a transfer ceramic tray is arranged at the bottom of the ceramic micropore tray, a transfer ceramic circular vacuum channel is arranged in the middle of the transfer ceramic tray, a transfer ceramic circular channel gas passage through hole is arranged at the bottom of the transfer ceramic circular vacuum channel, a transfer ceramic annular vacuum channel is arranged at the outer side of the transfer ceramic circular vacuum channel, a transfer ceramic annular channel gas passage through hole is arranged at the bottom of the transfer ceramic annular vacuum channel, a rotary motor is arranged at the bottom of the transfer ceramic tray, a tray circular vacuum channel is arranged in the middle of the tray circular vacuum channel, a tray annular vacuum channel is arranged at the outer side of the tray circular vacuum channel, and the problem that a micropore ceramic plate can generate longitudinal shaking is solved.
Description
Technical Field
The utility model relates to the technical field of silicon wafer laser processing equipment, in particular to a tray structure of silicon wafer laser processing equipment.
Background
The wafer processing belongs to the high-precision processing industry, and small errors can have a certain influence on the wafer processing result, and finally the product quality is influenced. Silicon wafer chucks are mechanisms for placing silicon wafers in laser dicing and other processes. The stability and accuracy of the adsorption of silicon wafers can affect the position of the wafer thereon and thus the accuracy of the wafer. Improving the accuracy of the silicon wafer chuck is important for high-accuracy wafer processing.
In the prior art, chinese patent document number CN114400202a discloses an easy-to-change high-precision wafer carrying platform, the device sets up main gas circuit and branch gas circuit of equipartition through carrying the dish vacuum channel, make the vacuum air cavity in the middle of the dish and carry the dish vacuum channel and adsorb respectively, thereby make the dish position stable in the adsorption process, the precision is high, but because micropore of micropore ceramic plate is not evenly distributed, be uncontrollable, the mode that adopts vacuum air cavity in the middle of the aforesaid carrying dish and carrying the dish vacuum channel to adsorb respectively can make the negative pressure that produces in the middle of the micropore ceramic plate and bottom around, the adsorption force that produces is different, in the adsorption process, the micropore ceramic plate can produce vertical shake, the stability of micropore ceramic plate has been reduced, thereby the precision of wafer processing has been reduced, moreover, the vacuum pipeline structure that main gas circuit and branch gas circuit are connected is complicated, the processing degree of difficulty is big, the equipment cost has been increased.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the utility model aims to provide a tray structure of silicon wafer laser processing equipment, solves the problems existing in the prior art, and solves the problem that a microporous ceramic plate can generate longitudinal shaking.
(II) technical scheme
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a silicon wafer laser processing equipment tray structure, including ceramic micropore tray, ceramic micropore tray top is equipped with micropore ceramic layer, ceramic micropore tray bottom is equipped with the ceramic dish of switching, the ceramic circular vacuum channel of switching has been seted up in the middle of the ceramic dish of switching, the ceramic circular channel gas circuit through-hole of switching has been seted up to the ceramic circular vacuum channel bottom of switching, the ceramic annular vacuum channel of switching has been seted up in the ceramic annular vacuum channel bottom of switching, the ceramic annular channel gas circuit through-hole of switching has been seted up to the ceramic annular vacuum channel bottom of switching, the rotating electrical machines has been seted up in the middle of the ceramic micropore tray, the tray vacuum channel gas circuit through-hole has been seted up in the middle of the circular vacuum channel of tray, the tray annular vacuum channel has been seted up in the circular vacuum channel of tray outside.
Preferably, at least two tray annular vacuum passages are provided, and the raised ring formed between the tray annular vacuum passages is broken and equally divided into three sectors.
Preferably, the convex ring formed between the tray annular vacuum channel and the tray circular vacuum channel is split equally into three segments.
Preferably, at least two of the adapter ceramic annular vacuum channels are provided.
Preferably, six screw fixing through holes are formed in the outer ring of the switching ceramic disc.
Preferably, the gas passage through holes of the transfer ceramic annular channel penetrate through the upper surface and the lower surface of the transfer ceramic disc.
Preferably, the size of the tray vacuum channel gas channel through hole is the same as that of the switching ceramic circular channel gas channel through hole, and the upper and lower positions of the tray vacuum channel gas channel through hole correspond to the upper and lower positions of the switching ceramic circular channel gas channel through hole.
(III) beneficial effects
1. The utility model provides a tray structure of silicon wafer laser processing equipment, in the device, a tray circular vacuum channel is arranged in the middle of a ceramic micropore tray, a tray vacuum channel gas path through hole is arranged in the middle of the tray circular vacuum channel, tray annular vacuum channels are arranged at the outer sides of the tray circular vacuum channels, at least two tray annular vacuum channels are arranged, a convex circular ring formed between the tray annular vacuum channels is broken and equally divided into three fan-shaped pieces, the convex circular ring formed between the tray annular vacuum channels and the tray circular vacuum channel is broken and equally divided into three fan-shaped pieces, the tray circular vacuum channels are communicated with the tray annular vacuum channels, when the gas is pumped outwards through the tray vacuum channel gas path through hole, the adsorption force formed inside uniformly acts on the center to the edge of a micropore ceramic layer, so that the stress is uniform when the micropore ceramic layer is adsorbed, the stress is not uniform when the micropore ceramic layer is adsorbed, and the longitudinal shaking of the micropore ceramic layer is generated, thereby the stability of the micropore ceramic plate is improved, the precision of the wafer processing is improved, and meanwhile, the structure has the advantages of simple structure, easy processing, equipment cost reduction and the like.
2. The utility model provides a tray structure of silicon wafer laser processing equipment, which is characterized in that the device is used for exhausting air outwards through an air passage through hole of a transfer ceramic annular channel, so that a negative pressure vacuum cavity is formed between the transfer ceramic annular vacuum channel and a ceramic micropore tray, the ceramic micropore tray is adsorbed on the top of the transfer ceramic tray, and the ceramic micropore tray are connected through vacuum adsorption, so that a tiny air gap between the transfer ceramic tray and the ceramic micropore tray is eliminated, the flatness precision of the ceramic micropore tray at the top is improved, and the processing precision is further improved.
3. The utility model provides a tray structure of silicon wafer laser processing equipment, which is characterized in that at least two transfer ceramic annular vacuum channels are arranged, so that the adsorption force of a transfer ceramic tray to a ceramic micropore tray is uniformly distributed at the bottom of the ceramic micropore tray in a multi-ring shape, and the adsorption force is arranged from the center to the edge of the ceramic micropore tray, thereby reducing the longitudinal shaking of the ceramic micropore tray in the adsorption process.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present utility model.
Fig. 2 is a schematic structural diagram of the overall exploded view of the present utility model.
Fig. 3 is a schematic structural view of the ceramic microporous tray of the present utility model.
Fig. 4 is a schematic structural view of the adaptor ceramic disc of the present utility model.
In the figure: 1-ceramic micropore tray, 2-tray circular vacuum channel, 3-tray annular vacuum channel, 4-switching ceramic tray, 5-switching ceramic circular vacuum channel, 6-switching ceramic annular vacuum channel, 7-rotating motor, 11-micropore ceramic layer, 21-tray vacuum channel gas circuit through hole, 51-switching ceramic circular channel gas circuit through hole, 61-switching ceramic annular channel gas circuit through hole.
Detailed Description
In this application, unless explicitly specified and defined otherwise, technical terms used in this application should be given the ordinary meaning as understood by the skilled artisan. The terms "connected," "fixedly," "disposed" and the like are to be construed broadly and may be fixedly connected, detachably connected or integrally formed; can be directly connected or indirectly connected through an intermediate medium; either mechanically or electrically. Unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or in indirect contact via an intermediary. Moreover, a first feature being "above" or "over" or "upper" a second feature may be a first feature being directly above or diagonally above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under" or "beneath" or "under" the second feature may be the first feature being directly under or obliquely under the second feature, or simply indicating that the first feature is level less than the second feature. Relational terms such as first, second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Terms such as "center", "widthwise", "longitudinal", "length", "width", "thickness", "height", "front", "rear", "left", "right", "up", "down", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", "clockwise", "counterclockwise", etc. used in the description are based on the orientation or positional relationship shown in the drawings, and are merely for convenience of description and simplification of the description, rather than indicating or suggesting that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation
The technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to fig. 1 to 4 of the embodiments of the present utility model, and it is obvious that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The utility model provides a technical scheme that: the utility model provides a silicon wafer laser processing equipment tray structure, including ceramic micropore tray 1, ceramic micropore tray 1 top is equipped with micropore ceramic layer 11, ceramic micropore tray 1 bottom is equipped with switching ceramic dish 4, switching ceramic circular vacuum channel 5 has been seted up in the middle of the switching ceramic dish 4, switching ceramic circular vacuum channel 5 bottom has been seted up switching ceramic circular vacuum channel gas circuit through-hole 51, switching ceramic annular vacuum channel 6 has been seted up in the outside of switching ceramic circular vacuum channel 5, switching ceramic annular vacuum channel 6 is provided with at least two, switching ceramic annular vacuum channel 6 bottom has been equipped with switching ceramic annular channel gas circuit through-hole 61, switching ceramic annular channel gas circuit through-hole 61 runs through in switching ceramic dish 4 upper and lower face, switching ceramic dish 4 bottom is equipped with rotating electrical machines 7, switching ceramic dish 4 outer lane is provided with six screw fixation through-holes, tray circular vacuum channel 2 has been seted up in the middle of ceramic micropore tray 1, tray circular vacuum channel 21 has been seted up in the middle of tray circular vacuum channel 2, tray annular vacuum channel 3 has been provided with two at least, and tray annular vacuum channel 3 has just to form protruding ring-shaped ring break-off between the annular ring between 3 and form and be equipped with fan-shaped vacuum channel round fan-shaped circle that the same through-hole is formed with the fan-shaped vacuum channel 21 on the disk fan-shaped circle that the fan-shaped circle that just the fan-shaped vacuum channel is equal to the disk is broken down with the circular through-shaped circle through-shaped circle 3.
Working principle: during operation, the through hole 61 of the through ceramic ring channel is used for exhausting outwards, a negative pressure vacuum cavity is formed between the through ceramic ring channel 6 and the ceramic micropore tray 1, the ceramic micropore tray 1 is adsorbed on the top of the through ceramic disc 4, the through ceramic ring channel and the ceramic micropore tray are connected in a vacuum adsorption mode, then a wafer to be processed is placed on the micropore ceramic layer 11, the through hole 51 of the through ceramic ring channel is used for exhausting outwards, the air in the through ceramic ring channel 5 is exhausted, the through ceramic ring channel 5 is communicated with the through hole 21 of the tray vacuum channel, then the air in the through hole 21 of the tray vacuum channel is indirectly exhausted outwards, the air in the tray ring vacuum channel 2 and the air in the tray ring vacuum channel 3 are exhausted, a negative pressure space is formed between the through holes in the micropore ceramic layer 11 and the micropore ceramic layer 11, the wafer placed on the through holes in the micropore ceramic layer 11 are uniformly adsorbed on the surface of the micropore ceramic layer 11, the wafer to be processed is fixed, and the wafer is positioned through the rotation of the rotating motor 7, and the fixing and positioning of the wafer are completed.
Claims (7)
1. The utility model provides a silicon wafer laser processing equipment tray structure, includes ceramic micropore tray (1), ceramic micropore tray (1) top is equipped with micropore ceramic layer (11), ceramic micropore tray (1) bottom is equipped with switching ceramic dish (4), switching ceramic circular vacuum channel (5) have been seted up in the middle of switching ceramic dish (4), switching ceramic circular channel gas circuit through-hole (51) have been seted up to switching ceramic circular vacuum channel (5) bottom, switching ceramic annular vacuum channel (6) have been seted up in switching ceramic circular vacuum channel (5) outside, switching ceramic annular vacuum channel (6) bottom has been seted up switching ceramic annular channel gas circuit through-hole (61), switching ceramic dish (4) bottom is equipped with rotating electrical machines (7), its characterized in that: the ceramic micropore tray is characterized in that a tray circular vacuum channel (2) is arranged in the middle of the ceramic micropore tray (1), a tray vacuum channel gas circuit through hole (21) is arranged in the middle of the tray circular vacuum channel (2), and a tray annular vacuum channel (3) is arranged on the outer side of the tray circular vacuum channel (2).
2. The silicon wafer laser processing apparatus tray structure according to claim 1, wherein: at least two tray annular vacuum channels (3) are arranged, and the protruding circular rings formed between the tray annular vacuum channels (3) are broken and equally divided into three fan-shaped pieces.
3. The silicon wafer laser processing apparatus tray structure according to claim 2, wherein: the convex circular ring formed between the tray annular vacuum channel (3) and the tray circular vacuum channel (2) is broken and equally divided into three fan-shaped pieces.
4. The silicon wafer laser processing apparatus tray structure according to claim 1, wherein: at least two switching ceramic annular vacuum channels (6) are arranged.
5. The silicon wafer laser processing apparatus tray structure according to claim 1, wherein: six screw fixing through holes are formed in the outer ring of the switching ceramic disc (4).
6. The silicon wafer laser processing apparatus tray structure according to claim 1, wherein: the gas path through holes (61) of the transfer ceramic annular channel penetrate through the upper surface and the lower surface of the transfer ceramic disc (4).
7. The silicon wafer laser processing apparatus tray structure according to claim 1, wherein: the tray vacuum channel air passage through holes (21) are the same as the adapting ceramic circular channel air passage through holes (51) in size and correspond to the upper and lower positions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321670390.4U CN220259900U (en) | 2023-06-29 | 2023-06-29 | Tray structure of silicon wafer laser processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321670390.4U CN220259900U (en) | 2023-06-29 | 2023-06-29 | Tray structure of silicon wafer laser processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220259900U true CN220259900U (en) | 2023-12-29 |
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ID=89310315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321670390.4U Active CN220259900U (en) | 2023-06-29 | 2023-06-29 | Tray structure of silicon wafer laser processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220259900U (en) |
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2023
- 2023-06-29 CN CN202321670390.4U patent/CN220259900U/en active Active
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