CN111164762B - 肖特基二极管与mosfet的集成 - Google Patents
肖特基二极管与mosfet的集成 Download PDFInfo
- Publication number
- CN111164762B CN111164762B CN201880059802.6A CN201880059802A CN111164762B CN 111164762 B CN111164762 B CN 111164762B CN 201880059802 A CN201880059802 A CN 201880059802A CN 111164762 B CN111164762 B CN 111164762B
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- contact
- epitaxial
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010354 integration Effects 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims description 31
- 230000008929 regeneration Effects 0.000 claims description 30
- 238000011069 regeneration method Methods 0.000 claims description 30
- 238000001465 metallisation Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 25
- 238000013461 design Methods 0.000 abstract description 18
- 230000008901 benefit Effects 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311454715.XA CN117457651A (zh) | 2017-09-15 | 2018-09-14 | 肖特基二极管与mosfet的集成 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1751139-5 | 2017-09-15 | ||
SE1751139A SE541402C2 (en) | 2017-09-15 | 2017-09-15 | Integration of a schottky diode with a mosfet |
PCT/EP2018/074909 WO2019053203A1 (en) | 2017-09-15 | 2018-09-14 | INTEGRATING A SCHOTTKY DIODE WITH A MOSFET |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311454715.XA Division CN117457651A (zh) | 2017-09-15 | 2018-09-14 | 肖特基二极管与mosfet的集成 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111164762A CN111164762A (zh) | 2020-05-15 |
CN111164762B true CN111164762B (zh) | 2023-11-24 |
Family
ID=63586740
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311454715.XA Pending CN117457651A (zh) | 2017-09-15 | 2018-09-14 | 肖特基二极管与mosfet的集成 |
CN201880059802.6A Active CN111164762B (zh) | 2017-09-15 | 2018-09-14 | 肖特基二极管与mosfet的集成 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311454715.XA Pending CN117457651A (zh) | 2017-09-15 | 2018-09-14 | 肖特基二极管与mosfet的集成 |
Country Status (6)
Country | Link |
---|---|
US (3) | US11114557B2 (zh) |
EP (1) | EP3682484A1 (zh) |
JP (2) | JP7389038B2 (zh) |
CN (2) | CN117457651A (zh) |
SE (1) | SE541402C2 (zh) |
WO (1) | WO2019053203A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE541402C2 (en) * | 2017-09-15 | 2019-09-17 | Ascatron Ab | Integration of a schottky diode with a mosfet |
SE542709C2 (en) | 2018-05-22 | 2020-06-30 | Ascatron Ab | Buried grid with shield in a wide band gap material |
JP7240970B2 (ja) | 2019-06-27 | 2023-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN114784108B (zh) * | 2022-04-21 | 2023-05-05 | 电子科技大学 | 一种集成结势垒肖特基二极管的平面栅SiC MOSFET及其制作方法 |
CN114580332B (zh) * | 2022-05-06 | 2022-08-12 | 深圳市威兆半导体股份有限公司 | 一种超结mosfet器件的仿真方法 |
CN114823911B (zh) * | 2022-06-30 | 2022-10-04 | 成都蓉矽半导体有限公司 | 集成高速续流二极管的沟槽碳化硅mosfet及制备方法 |
CN116110796B (zh) * | 2023-04-17 | 2023-06-13 | 深圳平创半导体有限公司 | 集成sbd的碳化硅sgt-mosfet及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441148A (zh) * | 2013-08-13 | 2013-12-11 | 电子科技大学 | 一种集成肖特基二极管的槽栅vdmos器件 |
JP2014170778A (ja) * | 2013-03-01 | 2014-09-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL196122A (zh) | 1951-11-30 | 1900-01-01 | ||
JPH08204179A (ja) | 1995-01-26 | 1996-08-09 | Fuji Electric Co Ltd | 炭化ケイ素トレンチmosfet |
US6049108A (en) | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
JPH0982988A (ja) * | 1995-09-14 | 1997-03-28 | Toshiba Corp | 半導体装置 |
JP3392665B2 (ja) * | 1995-11-06 | 2003-03-31 | 株式会社東芝 | 半導体装置 |
SE9700141D0 (sv) | 1997-01-20 | 1997-01-20 | Abb Research Ltd | A schottky diode of SiC and a method for production thereof |
SE9704149D0 (sv) | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
JPH11330498A (ja) * | 1998-05-07 | 1999-11-30 | Fuji Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
WO2001022498A1 (de) | 1999-09-22 | 2001-03-29 | Siced Electronics Development Gmbh & Co. Kg | Sic-halbleitervorrichtung mit einem schottky-kontakt und verfahren zu deren herstellung |
FR2816113A1 (fr) | 2000-10-31 | 2002-05-03 | St Microelectronics Sa | Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky |
US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US6855998B2 (en) | 2002-03-26 | 2005-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP3930436B2 (ja) | 2002-03-26 | 2007-06-13 | 株式会社東芝 | 半導体装置 |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP4585772B2 (ja) | 2004-02-06 | 2010-11-24 | 関西電力株式会社 | 高耐圧ワイドギャップ半導体装置及び電力装置 |
JP4018650B2 (ja) | 2004-02-16 | 2007-12-05 | 松下電器産業株式会社 | ショットキーバリアダイオードおよびその製造方法 |
US7952139B2 (en) * | 2005-02-11 | 2011-05-31 | Alpha & Omega Semiconductor Ltd. | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
JP2007012858A (ja) | 2005-06-30 | 2007-01-18 | Toshiba Corp | 半導体素子及びその製造方法 |
US20070029573A1 (en) | 2005-08-08 | 2007-02-08 | Lin Cheng | Vertical-channel junction field-effect transistors having buried gates and methods of making |
US20070228505A1 (en) | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
JP5071763B2 (ja) | 2006-10-16 | 2012-11-14 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置およびその製造方法 |
US7829709B1 (en) | 2007-08-10 | 2010-11-09 | Marquette University | Cysteine prodrugs to treat schizophrenia and drug addiction |
JP4599379B2 (ja) * | 2007-08-31 | 2010-12-15 | 株式会社東芝 | トレンチゲート型半導体装置 |
US8421148B2 (en) | 2007-09-14 | 2013-04-16 | Cree, Inc. | Grid-UMOSFET with electric field shielding of gate oxide |
EP2058854B1 (en) | 2007-11-07 | 2014-12-03 | Acreo Swedish ICT AB | A semiconductor device |
US8704295B1 (en) | 2008-02-14 | 2014-04-22 | Maxpower Semiconductor, Inc. | Schottky and MOSFET+Schottky structures, devices, and methods |
US7851881B1 (en) | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
US9093521B2 (en) * | 2008-06-30 | 2015-07-28 | Alpha And Omega Semiconductor Incorporated | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout |
WO2012056719A1 (ja) * | 2010-10-29 | 2012-05-03 | パナソニック株式会社 | コンバータ |
JP5881322B2 (ja) | 2011-04-06 | 2016-03-09 | ローム株式会社 | 半導体装置 |
WO2013031212A1 (ja) | 2011-08-29 | 2013-03-07 | 次世代パワーデバイス技術研究組合 | 双方向素子、双方向素子回路および電力変換装置 |
US8952481B2 (en) | 2012-11-20 | 2015-02-10 | Cree, Inc. | Super surge diodes |
CN103000698B (zh) | 2012-11-23 | 2015-12-09 | 中国科学院微电子研究所 | 一种SiC结势垒肖特基二极管及其制作方法 |
US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
JP2014241368A (ja) | 2013-06-12 | 2014-12-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US10062749B2 (en) | 2013-06-18 | 2018-08-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
JP6135364B2 (ja) * | 2013-07-26 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US10868169B2 (en) * | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
DE102014200429A1 (de) | 2014-01-13 | 2015-07-16 | Robert Bosch Gmbh | Trench-MOSFET-Transistorvorrichtung, Substrat für Trench-MOSFET-Transistorvorrichtung und entsprechendes Herstellungsverfahren |
JP6287377B2 (ja) | 2014-03-11 | 2018-03-07 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置 |
JP6237408B2 (ja) | 2014-03-28 | 2017-11-29 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2016009712A (ja) | 2014-06-23 | 2016-01-18 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US9583482B2 (en) * | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
US9646964B2 (en) * | 2015-07-23 | 2017-05-09 | Vanguard International Semiconductor Corporation | Semiconductor device |
JP6400544B2 (ja) | 2015-09-11 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
JP6996082B2 (ja) * | 2016-12-22 | 2022-01-17 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
SE541402C2 (en) * | 2017-09-15 | 2019-09-17 | Ascatron Ab | Integration of a schottky diode with a mosfet |
SE541466C2 (en) * | 2017-09-15 | 2019-10-08 | Ascatron Ab | A concept for silicon carbide power devices |
-
2017
- 2017-09-15 SE SE1751139A patent/SE541402C2/en unknown
-
2018
- 2018-09-14 US US16/647,186 patent/US11114557B2/en active Active
- 2018-09-14 CN CN202311454715.XA patent/CN117457651A/zh active Pending
- 2018-09-14 WO PCT/EP2018/074909 patent/WO2019053203A1/en unknown
- 2018-09-14 EP EP18769700.8A patent/EP3682484A1/en active Pending
- 2018-09-14 CN CN201880059802.6A patent/CN111164762B/zh active Active
- 2018-09-14 JP JP2020537041A patent/JP7389038B2/ja active Active
-
2021
- 2021-08-10 US US17/444,817 patent/US11581431B2/en active Active
-
2023
- 2023-01-17 US US18/155,394 patent/US11984497B2/en active Active
- 2023-07-14 JP JP2023115556A patent/JP2023145533A/ja not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014170778A (ja) * | 2013-03-01 | 2014-09-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
CN103441148A (zh) * | 2013-08-13 | 2013-12-11 | 电子科技大学 | 一种集成肖特基二极管的槽栅vdmos器件 |
Also Published As
Publication number | Publication date |
---|---|
SE1751139A1 (en) | 2019-03-16 |
US11984497B2 (en) | 2024-05-14 |
US20210126121A1 (en) | 2021-04-29 |
US20230155019A1 (en) | 2023-05-18 |
US11114557B2 (en) | 2021-09-07 |
EP3682484A1 (en) | 2020-07-22 |
WO2019053203A1 (en) | 2019-03-21 |
JP7389038B2 (ja) | 2023-11-29 |
SE541402C2 (en) | 2019-09-17 |
US20220029010A1 (en) | 2022-01-27 |
JP2023145533A (ja) | 2023-10-11 |
US11581431B2 (en) | 2023-02-14 |
CN117457651A (zh) | 2024-01-26 |
JP2020533811A (ja) | 2020-11-19 |
CN111164762A (zh) | 2020-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111164762B (zh) | 肖特基二极管与mosfet的集成 | |
CN107887382B (zh) | 半导体器件和用于形成半导体器件的方法 | |
US11444192B2 (en) | MOSFET in sic with self-aligned lateral MOS channel | |
JP5646044B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
CN108475701B (zh) | 面积高效的浮置场环终端 | |
US9825165B2 (en) | Charge-compensation device | |
US12034001B2 (en) | Concept for silicon carbide power devices | |
US11869940B2 (en) | Feeder design with high current capability | |
CN116825846A (zh) | 一种高可靠性半导体器件及其制造方法 | |
CN117878142A (zh) | 一种集成肖特基二极管的平面栅型mosfet及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: Stockholm, Sweden Patentee after: II-VI Hista Co. Country or region after: Sweden Address before: Sweden Kista Patentee before: Ascaton Country or region before: Sweden |
|
CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240614 Address after: Delaware, USA Patentee after: II-VI Delaware Ltd. Country or region after: U.S.A. Address before: Stockholm, Sweden Patentee before: II-VI Hista Co. Country or region before: Sweden |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240624 Address after: new jersey Patentee after: II-VI Advanced Materials Co.,Ltd. Country or region after: U.S.A. Address before: Delaware, USA Patentee before: II-VI Delaware Ltd. Country or region before: U.S.A. |
|
TR01 | Transfer of patent right |