CN111089988B - High-uniformity magnetic probe and preparation method thereof - Google Patents
High-uniformity magnetic probe and preparation method thereof Download PDFInfo
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- CN111089988B CN111089988B CN201911379941.XA CN201911379941A CN111089988B CN 111089988 B CN111089988 B CN 111089988B CN 201911379941 A CN201911379941 A CN 201911379941A CN 111089988 B CN111089988 B CN 111089988B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/50—MFM [Magnetic Force Microscopy] or apparatus therefor, e.g. MFM probes
- G01Q60/54—Probes, their manufacture, or their related instrumentation, e.g. holders
- G01Q60/56—Probes with magnetic coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-uniformity magnetic probe and a preparation method thereof, wherein the curvature radius of the tip of a silicon-based probe tip is detected, and the probe with the curvature radius within the specification requirement is screened out; horizontally placing the silicon-based probe cantilever qualified by screening, enabling the outer side surface of the needle tip substrate to vertically face upwards, and sputtering and depositing a passivation layer; vertically placing the silicon-based probe cantilever to enable the outer side surface of the needle tip substrate to be along the horizontal direction, and sputtering and depositing a magnetic induction layer; placing a silicon-based probe cantilever at an included angle of 30 degrees with the vertical direction to enable the inner side surface of a probe tip base body to be along the horizontal direction, and sputtering and depositing a magnetic shielding layer; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a high-uniformity magnetic probe and a preparation method thereof.
Background
At present, the application of Magnetic Force Microscopy (MFM) has been expanded from qualitative studies of magnetic domain morphology to quantitative analysis of magnetic field width, and magnetic probes as MFM consumables directly determine the accuracy of quantitative analysis results. The detection intensity uniformity of the magnetic signal expressed by the existing magnetic probe is poor, and the detection result obtained by the method cannot be accurately and quantitatively analyzed at all because the detection intensity uniformity of the magnetic signal is different not only in batches, but also in different probes in the same batch. Firstly, the difference of the curvature radius of the front end of the needle point of the non-magnetic coating probe is large, so that the deposition thickness of the thin film at the front end of the needle point is different, and the signal intensity is influenced; secondly, in the process of depositing the film of the magnetic coating probe, a part of the film is deposited on the cantilever of the probe to generate a stray magnetic field so as to influence the signal intensity. Therefore, there is a need to develop a new magnetic probe having high uniform signal intensity that solves the above-mentioned problems.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The invention aims to provide a high-uniformity magnetic probe and a preparation method thereof, and aims to solve the problem that the existing magnetic probe has poor magnetic signal detection strength uniformity due to the fact that the curvature radius difference of the tip of the non-magnetic coating probe is large and a part of thin film is deposited on a probe cantilever to generate a stray magnetic field.
The technical scheme of the invention is as follows:
a preparation method of a high-uniformity magnetic probe specifically comprises the following steps:
s1: detecting the curvature radius of the tip of the silicon-based probe, and screening out the probes with the curvature radius within the specification requirement;
s2: horizontally placing the silicon-based probe cantilever which is qualified by screening, enabling the outer side surface of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer on the needle tip of the probe body and the surface of the silicon-based probe cantilever;
s3: vertically placing the silicon-based probe cantilever, enabling the outer side surface of the needle tip base body to be along the horizontal direction, and sputtering and depositing a magnetic induction layer on the needle tip of the probe body and the outer side surface of the needle tip base body on the basis of S2;
s4: and placing the silicon-based probe cantilever at an included angle of 30 degrees with the vertical direction to ensure that the inner side surface of the needle tip base body is along the horizontal direction, and sputtering and depositing a magnetic shielding layer on the inner side surface of the needle tip base body of the probe body and the silicon-based probe cantilever on the basis of S3.
In the step S1, the radius of curvature of the tip end of the silicon-based probe is detected by using an SEM.
In the preparation method of the high-uniformity magnetic probe, in the step S1, a probe with the curvature radius within 15nm is screened out.
In the preparation method of the high-uniformity magnetic probe, in the step S2, the passivation layer is a Si thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Si thin film layer to a thickness of 20-40nm.
In the preparation method of the high-uniformity magnetic probe, in S3, the magnetic induction layer is a Ni thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Ni film layer with the deposition thickness of 30-50nm.
In the preparation method of the high-uniformity magnetic probe, in S4, the magnetic shielding layer is a Cu thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Cu thin film layer to a thickness of 3-5nm.
A high-uniformity magnetic probe is prepared by any one of the preparation methods, and comprises a probe body; a passivation layer uniformly deposited on the needle tip of the probe body and the surface of the silicon-based probe cantilever; the magnetic induction layer is deposited on the needle tip of the probe body and the outer side surface of the needle tip substrate; and the magnetic shielding layer is deposited on the inner side surface of the tip substrate of the probe body and the cantilever.
The invention has the beneficial effects that: the invention provides a high-uniformity magnetic probe and a preparation method thereof, which are used for detecting the curvature radius of the tip of a silicon-based probe tip and screening out probes with the curvature radius within the specification requirement; horizontally placing the silicon-based probe cantilever which is qualified by screening, enabling the outer side surface of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer; vertically placing the silicon-based probe cantilever to enable the outer side surface of the needle tip substrate to be along the horizontal direction, and sputtering and depositing a magnetic induction layer; placing a silicon-based probe cantilever at an included angle of 30 degrees with the vertical direction to enable the inner side surface of a probe tip base body to be along the horizontal direction, and sputtering and depositing a magnetic shielding layer; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
Drawings
FIG. 1 is a flow chart illustrating the steps of a method for preparing a high uniformity magnetic probe according to the present invention.
FIG. 2 is a block diagram of a silicon-based uncoated probe of the present invention.
FIG. 3 is a view showing the structure of the tip of a probe having different radii of curvature in the present invention.
FIG. 4a and FIG. 4b are the deposition pattern of the Si thin film and the structure diagram of the tip after deposition, respectively.
FIG. 5a and FIG. 5b are the deposition pattern of the Ni film and the structure of the tip after deposition, respectively.
FIG. 6a and FIG. 6b are the deposition pattern of the Cu thin film and the structure diagram of the tip after deposition.
FIGS. 7a and 7b are graphs comparing the uniformity of signal intensity for the commercial magnetic probe of the present invention and the high uniformity magnetic probe of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; may be mechanically, electrically or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation that the first and second features are not in direct contact, but are in contact via another feature between them. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 1, a method for preparing a high-uniformity magnetic probe specifically includes the following steps:
s1: as shown in fig. 2, the curvature radius of the tip end 4 of the silicon-based probe is detected by using SEM (scanning electron microscope) (as shown in fig. 3, the probe tip structure with different curvature radius is shown), and the probe with the curvature radius within the specification requirement is screened out;
s2: as shown in fig. 4a, horizontally placing the silicon-based probe cantilever 1 qualified by screening, enabling the outer side surface 3 of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer 5 on the needle tip of the probe body and the surface of the silicon-based probe cantilever 1 (as shown in fig. 4 b);
s3: as shown in fig. 5a, vertically placing the silicon-based probe cantilever 1, making the outer side surface 3 of the tip substrate along the horizontal direction, and sputtering and depositing a magnetic induction layer 6 on the tip of the probe body and the outer side surface 3 of the tip substrate on the basis of S2 (as shown in fig. 5 b);
s4: as shown in fig. 6a, the silicon-based probe cantilever 1 is placed at an included angle of 30 degrees with the vertical direction, so that the inner side surface 2 of the needle tip base body is along the horizontal direction, and a magnetic shielding layer 7 is sputtered and deposited on the inner side surface 2 of the needle tip base body of the probe body and the silicon-based probe cantilever 1 on the basis of S3 (as shown in fig. 6 b).
In some embodiments, in S1, probes with a radius of curvature within 15nm are selected.
In some embodiments, in S2, the passivation layer 5 is a Si thin film layer.
In some embodiments, in S3, the magnetic induction layer 6 is a Ni thin film layer.
In some embodiments, in S4, the magnetic shielding layer 7 is a Cu thin film layer.
Wherein, the deposition thickness of the Si film layer, the Ni film layer and the Cu film layer is correspondingly adjusted according to the curvature radius of the tip 4 of the silicon-based probe.
In some embodiments, the Si thin film layer is deposited to a thickness of 20-40nm.
In some embodiments, the Ni thin film layer is deposited to a thickness of 30-50nm.
In some embodiments, the Cu thin film layer is deposited to a thickness of 3-5nm.
A high-uniformity magnetic probe is prepared by the preparation method, and comprises a probe body; a passivation layer 5 uniformly deposited on the needle tip of the probe body and the surface of the silicon-based probe cantilever 1; a magnetic induction layer 6 deposited on the needle tip of the probe body and the outer side surface 3 of the needle tip substrate; and the magnetic shielding layer 7 is deposited on the inner side surface 2 of the tip substrate of the probe body and the silicon-based probe cantilever 1.
The method for preparing the magnetic probe with high uniformity as described above will now be described by referring to the following examples:
example 1
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out a probe with the curvature radius R of 5-8 nm;
s2: horizontally placing the screened silicon-based probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 20nm;
s3: vertically placing the silicon-based probe cantilever 1, and sputtering and depositing a Ni film 6 with the thickness of 50nm on the basis of S2 along the horizontal direction of the outer side surface 3 of the probe tip substrate;
s4: and placing the silicon-based probe cantilever 1 at an included angle of 30 degrees with the vertical direction, sputtering and depositing a Cu film with the thickness of 5nm on the basis of S3 on the inner side surface 2 of the probe tip substrate along the horizontal direction, and finally obtaining the magnetic probe with high signal intensity uniformity.
Example 2
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out a probe with the curvature radius R of 9-12 nm;
s2: horizontally placing the screened silicon-based probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 30nm;
s3: vertically placing the silicon-based probe cantilever 1, and sputtering and depositing a Ni film 6 with the thickness of 40nm on the basis of S2 along the outer side surface 3 of the needle tip substrate in the horizontal direction;
s4: placing the silicon-based probe cantilever 1 and the vertical direction at an included angle of 30 degrees, sputtering and depositing a Cu film with the thickness of 4nm on the basis of S3 by using the inner side surface 2 of the probe tip substrate along the horizontal direction, and finally obtaining the magnetic probe which has high signal intensity uniformity and is close to that of the embodiment 1.
Example 3
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out the probe with the curvature radius R of 13-15 nm;
s2: horizontally placing the screened silicon-based probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 40nm;
s3: vertically placing the silicon-based probe cantilever 1, and sputtering and depositing a Ni film 6 with the thickness of 30nm on the basis of S2 along the horizontal direction of the outer side surface 3 of the probe tip substrate;
s4: placing the silicon-based probe cantilever 1 and the vertical direction at an included angle of 30 degrees, enabling the inner side surface 2 of the probe tip base body to be in the horizontal direction, and sputtering and depositing a Cu thin film with the thickness of 3nm on the basis of S3 to finally obtain the magnetic probe which is high in signal intensity uniformity and is close to that of the magnetic probe in the embodiments 1 and 2.
As shown in FIGS. 7a and 7b, the signal intensity uniformity of the magnetic probe on the general market and the magnetic probe manufactured by the present embodiment are compared, and it can be seen that the magnetic probe manufactured by the present embodiment has high signal intensity uniformity.
According to the technical scheme, a Si thin film layer is used as a passivation layer 5 and is uniformly deposited on the surfaces of a needle point and a silicon-based probe cantilever 1, a Ni thin film is used as a magnetic induction layer 6 and is deposited on the outer side surfaces 3 of the needle point and a needle point substrate, a Cu thin film is used as a magnetic shielding layer 6 and is deposited on the inner side surface 2 of the needle point substrate and the silicon-based probe cantilever 1, and thus the magnetic probe with high uniform signal intensity is prepared; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Reference numerals
The probe comprises a 1-silicon-based probe cantilever, 2-a needle point substrate inner side face, 3-a needle point substrate outer side face, 4-a probe needle point tip, a 5-Si thin film layer, a 6-Ni thin film layer, a 7-Cu thin film layer, a 501-Si thin film deposition direction, a 601-Ni thin film deposition direction and a 701-Cu thin film deposition direction.
Claims (2)
1. A preparation method of a high-uniformity magnetic probe is characterized by comprising the following steps:
s1: detecting the curvature radius of the tip (4) of the silicon-based probe by using SEM detection, and screening out the probe with the curvature radius within 15nm of the specification requirement;
s2: horizontally placing the silicon-based probe cantilever (1) qualified by screening, enabling the outer side surface (3) of the needle point matrix to vertically face upwards, and sputtering and depositing a passivation layer (5) on the needle point of the probe body and the surface of the silicon-based probe cantilever (1); the passivation layer (5) is a Si thin film layer, and the deposition thickness of the Si thin film layer is 20-40nm;
s3: vertically placing the silicon-based probe cantilever (1) to enable the outer side surface (3) of the needle point substrate to sputter and deposit a magnetic induction layer (6) on the needle point of the probe body and the outer side surface (3) of the needle point substrate along the horizontal direction on the basis of the S2; the magnetic induction layer (6) is a Ni film layer, and the deposition thickness of the Ni film layer is 30-50nm;
s4: placing the silicon-based probe cantilever (1) at an included angle of 30 degrees with the vertical direction, and sputtering and depositing a magnetic shielding layer (7) on the inner side surface (2) of the probe body and the silicon-based probe cantilever (1) along the horizontal direction on the basis of S3; the magnetic shielding layer (7) is a Cu thin film layer, and the deposition thickness of the Cu thin film layer is 3-5nm.
2. A magnetic probe with high uniformity, which is prepared by the preparation method of claim 1, comprising a probe body; a passivation layer (5) uniformly deposited on the needle tip of the probe body and the surface of the silicon-based probe cantilever (1); a magnetic induction layer (6) deposited on the needle tip of the probe body and the outer side surface (3) of the needle tip base body; and a magnetic shielding layer (7) deposited on the inner side surface (2) of the tip substrate of the probe body and the cantilever.
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