CN111089988A - High-uniformity magnetic probe and preparation method thereof - Google Patents
High-uniformity magnetic probe and preparation method thereof Download PDFInfo
- Publication number
- CN111089988A CN111089988A CN201911379941.XA CN201911379941A CN111089988A CN 111089988 A CN111089988 A CN 111089988A CN 201911379941 A CN201911379941 A CN 201911379941A CN 111089988 A CN111089988 A CN 111089988A
- Authority
- CN
- China
- Prior art keywords
- probe
- magnetic
- tip
- cantilever
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/50—MFM [Magnetic Force Microscopy] or apparatus therefor, e.g. MFM probes
- G01Q60/54—Probes, their manufacture, or their related instrumentation, e.g. holders
- G01Q60/56—Probes with magnetic coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-uniformity magnetic probe and a preparation method thereof, wherein the curvature radius of the tip of a silicon-based probe tip is detected, and the probe with the curvature radius within the specification requirement is screened out; horizontally placing the silicon-based probe cantilever qualified by screening, enabling the outer side surface of the needle tip substrate to vertically face upwards, and sputtering and depositing a passivation layer; vertically placing the silicon-based probe cantilever to enable the outer side surface of the needle tip substrate to be along the horizontal direction, and sputtering and depositing a magnetic induction layer; placing a silicon-based probe cantilever at an included angle of 30 degrees with the vertical direction to enable the inner side surface of a probe tip base body to be along the horizontal direction, and sputtering and depositing a magnetic shielding layer; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a high-uniformity magnetic probe and a preparation method thereof.
Background
At present, the application of Magnetic Force Microscopy (MFM) has been expanded from qualitative studies of magnetic domain morphology to quantitative analysis of magnetic field width, and magnetic probes as MFM consumables directly determine the accuracy of quantitative analysis results. The detection intensity uniformity of the magnetic signal expressed by the existing magnetic probe is poor, and the detection result obtained by the method cannot be accurately and quantitatively analyzed at all because the detection intensity uniformity of the magnetic signal is different not only in batches, but also in different probes in the same batch. Firstly, the difference of the curvature radius of the tip of the probe tip with the non-magnetic coating is large, so that the deposition thickness of the film at the tip position of the probe tip is different, and the signal intensity is influenced; secondly, in the process of film deposition of the probe with the magnetic coating, a part of the film is deposited on the cantilever of the probe to generate a stray magnetic field so as to influence the signal intensity. Therefore, there is a need to develop a new magnetic probe having high uniform signal intensity that solves the above-mentioned problems.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The invention aims to provide a high-uniformity magnetic probe and a preparation method thereof, and aims to solve the problem that the existing magnetic probe has poor magnetic signal detection strength uniformity due to the fact that the curvature radius difference of the tip of the non-magnetic coating probe is large and a part of thin film is deposited on a probe cantilever to generate a stray magnetic field.
The technical scheme of the invention is as follows: a preparation method of a high-uniformity magnetic probe specifically comprises the following steps:
s1: detecting the curvature radius of the tip of the silicon-based probe, and screening out the probe with the curvature radius within the specification requirement;
s2: horizontally placing the silicon-based probe cantilever qualified for screening, enabling the outer side surface of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer on the needle tip of the probe body and the surface of the cantilever;
s3: vertically placing the silicon-based probe cantilever to enable the outer side surface of the needle tip substrate to be along the horizontal direction, and sputtering and depositing a magnetic induction layer on the needle tip of the probe body and the outer side surface of the substrate on the basis of S2;
s4: and placing the cantilever of the silicon-based probe at an included angle of 30 degrees with the vertical direction to ensure that the inner side surface of the needle tip base body is along the horizontal direction, and sputtering and depositing a magnetic shielding layer on the inner side surface of the needle tip base body of the probe body and the cantilever on the basis of S3.
In the method for manufacturing a magnetic probe with high uniformity, in S1, the radius of curvature of the tip end of the silicon-based probe is detected by using SEM.
In the method for preparing a magnetic probe with high uniformity, in S1, a probe with a curvature radius within 15nm is selected.
In the preparation method of the high-uniformity magnetic probe, in S2, the passivation layer is a Si thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Si thin film layer to a thickness of 20-40 nm.
In the method for manufacturing the high-uniformity magnetic probe, in S3, the magnetic induction layer is a Ni thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Ni film layer with the deposition thickness of 30-50 nm.
In the preparation method of the high-uniformity magnetic probe, in S4, the magnetic shielding layer is a Cu thin film layer.
The preparation method of the high-uniformity magnetic probe comprises the step of depositing the Cu thin film layer to a thickness of 3-5 nm.
A high-uniformity magnetic probe is prepared by any one of the preparation methods, and comprises a probe body; a passivation layer uniformly deposited on the tip of the probe body and the surface of the cantilever; the magnetic induction layer is deposited on the needle tip of the probe body and the outer side surface of the substrate; and the magnetic shielding layer is deposited on the inner side surface of the tip substrate of the probe body and the cantilever.
The invention has the beneficial effects that: the invention provides a high-uniformity magnetic probe and a preparation method thereof, which are used for detecting the curvature radius of the tip of a silicon-based probe tip and screening out probes with the curvature radius within the specification requirement; horizontally placing the silicon-based probe cantilever qualified by screening, enabling the outer side surface of the needle tip substrate to vertically face upwards, and sputtering and depositing a passivation layer; vertically placing the silicon-based probe cantilever to enable the outer side surface of the needle tip substrate to be along the horizontal direction, and sputtering and depositing a magnetic induction layer; placing a silicon-based probe cantilever at an included angle of 30 degrees with the vertical direction to enable the inner side surface of a probe tip base body to be along the horizontal direction, and sputtering and depositing a magnetic shielding layer; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
Drawings
FIG. 1 is a flow chart illustrating the steps of a method for preparing a high uniformity magnetic probe according to the present invention.
FIG. 2 is a block diagram of a silicon-based uncoated probe of the present invention.
FIG. 3 is a view showing the structure of the tip of a probe having different radii of curvature in the present invention.
FIG. 4a and FIG. 4b are the deposition pattern of the Si thin film and the structure diagram of the tip after deposition, respectively.
FIG. 5a and FIG. 5b are the deposition pattern of the Ni film and the structure of the tip after deposition, respectively.
FIG. 6a and FIG. 6b are the deposition pattern of the Cu thin film and the structure diagram of the tip after deposition, respectively.
FIGS. 7a and 7b are graphs comparing the uniformity of signal intensity for the commercial magnetic probe of the present invention and the high uniformity magnetic probe of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 1, a method for preparing a high-uniformity magnetic probe specifically includes the following steps:
s1: as shown in fig. 2, the curvature radius of the tip end 4 of the silicon-based probe is detected by using SEM (scanning electron microscope) (as shown in fig. 3, the probe tip structure with different curvature radius is shown), and the probe with the curvature radius within the specification requirement is screened out;
s2: as shown in fig. 4a, horizontally placing the silicon-based probe cantilever 1 qualified by screening, enabling the outer side surface 3 of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer 5 on the needle tip of the probe body and the surface of the cantilever 1 (as shown in fig. 4 b);
s3: as shown in fig. 5a, vertically placing the silicon-based probe cantilever 1, making the outer side surface 3 of the tip substrate along the horizontal direction, and sputtering and depositing a magnetic induction layer 6 on the tip of the probe body and the outer side surface 3 of the tip substrate on the basis of S2 (as shown in fig. 5 b);
s4: as shown in fig. 6a, the silicon-based probe cantilever 1 is placed at an included angle of 30 degrees with the vertical direction, so that the inner side surface 2 of the tip base body is along the horizontal direction, and a magnetic shielding layer 7 is sputter-deposited on the inner side surface 2 of the tip base body of the probe body and the cantilever 1 on the basis of S3 (as shown in fig. 6 b).
In some embodiments, in S1, probes with a radius of curvature within 15nm of the specification are selected.
In some embodiments, the passivation layer 5 in S2 is a Si thin film layer.
In some embodiments, in S3, the magnetic sensing layer 6 is a Ni thin film layer.
In some embodiments, in S4, the magnetic shielding layer 7 is a Cu thin film layer.
Wherein, the deposition thickness of the Si film layer, the Ni film layer and the Cu film layer is correspondingly adjusted according to the curvature radius of the tip end 4 of the silicon-based probe.
In some embodiments, the Si thin film layer is deposited to a thickness of 20-40 nm.
In some embodiments, the Ni thin film layer is deposited to a thickness of 30-50 nm.
In some embodiments, the Cu thin film layer is deposited to a thickness of 3-5 nm.
A high-uniformity magnetic probe is prepared by the preparation method, and comprises a probe body; a passivation layer 5 uniformly deposited on the tip of the probe body and the surface of the cantilever 1; a magnetic induction layer 6 deposited on the needle tip of the probe body and the outer side surface 3 of the needle tip substrate; and a magnetic shielding layer 7 deposited on the inner side surface 2 of the tip base body of the probe body and the cantilever 1.
The method for preparing the magnetic probe with high uniformity as described above will now be described by referring to the following examples:
example 1
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out a probe with the curvature radius R of 5-8 nm;
s2: horizontally placing the screened probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 20 nm;
s3: vertically placing the probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to be horizontally sputtered and deposited with a Ni film 6 with the thickness of 50nm on the basis of S2;
s4: and placing the probe cantilever 1 and the vertical direction at an included angle of 30 degrees to ensure that the inner side surface 2 of the probe tip base body is sputtered and deposited with a Cu film with the thickness of 5nm on the basis of S3 along the horizontal direction, and finally obtaining the magnetic probe with high signal intensity uniformity.
Example 2
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out a probe with the curvature radius R of 9-12 nm;
s2: horizontally placing the screened probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 30 nm;
s3: vertically placing the probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to be horizontally sputtered and deposited with a Ni film 6 with the thickness of 40nm on the basis of S2;
s4: placing the probe cantilever 1 and the vertical direction at an included angle of 30 degrees, enabling the inner side surface 2 of the probe tip base body to be horizontally sputtered and deposited with a Cu film with the thickness of 4nm on the basis of S3, and finally obtaining the magnetic probe which is high in signal intensity uniformity and close to that of the magnetic probe in the embodiment 1.
Example 3
S1: detecting the curvature radius of the tip end 4 of the silica-based uncoated probe by using SEM (scanning Electron microscope), and screening out the probe with the curvature radius R of 13-15 nm;
s2: horizontally placing the screened probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to vertically face upwards, and sputtering and depositing a Si film 5 with the thickness of 40 nm;
s3: vertically placing the probe cantilever 1, enabling the outer side surface 3 of the needle tip substrate to be horizontally sputtered and deposited with a Ni film 6 with the thickness of 30nm on the basis of S2;
s4: placing the probe cantilever 1 and the vertical direction at an included angle of 30 degrees, enabling the inner side surface 2 of the probe tip base body to be in the horizontal direction, and sputtering and depositing a Cu film with the thickness of 3nm on the basis of S3 to finally obtain the magnetic probe which has high signal intensity uniformity and is close to that of the magnetic probe in the embodiments 1 and 2.
As shown in FIGS. 7a and 7b, the signal intensity uniformity of the magnetic probe on the general market and the magnetic probe manufactured by the present embodiment are compared, and it can be seen that the magnetic probe manufactured by the present embodiment has high signal intensity uniformity.
According to the technical scheme, a Si thin film layer is uniformly deposited on the surfaces of a needle point and a cantilever 1 as a passivation layer 5, a Ni thin film is deposited on the outer side surfaces 3 of the needle point and a needle point substrate as a magnetic induction layer 6, and a Cu thin film is deposited on the inner side surface 2 of the needle point substrate and the cantilever 1 as a magnetic shielding layer 6, so that a magnetic probe with high uniform signal intensity is prepared; the magnetic probe prepared by the technical scheme has the advantages of low cost, simple process, good repeatability, high-uniformity magnetic induction signal intensity, capability of fully ensuring the accuracy of a quantitative analysis result, and suitability for large-batch continuous magnetic force microscope detection for industrial production.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Reference numerals
1-probe cantilever, 2-needle tip base inner side face, 3-needle tip base outer side face, 4-probe needle tip front end, 5-Si thin film layer, 6-Ni thin film layer, 7-Cu thin film layer, 501-Si thin film deposition direction, 601-Ni thin film deposition direction and 701-Cu thin film deposition direction.
Claims (10)
1. A preparation method of a high-uniformity magnetic probe is characterized by comprising the following steps:
s1: detecting the curvature radius of the tip (4) of the silicon-based probe, and screening out the probe with the curvature radius within the specification requirement;
s2: horizontally placing the silicon-based probe cantilever (1) qualified by screening, enabling the outer side surface (3) of the needle tip base body to vertically face upwards, and sputtering and depositing a passivation layer (5) on the needle tip of the probe body and the surface of the cantilever (1);
s3: vertically placing the silicon-based probe cantilever (1), and sputtering and depositing a magnetic induction layer (6) on the probe tip of the probe body and the outer side surface (3) of the substrate on the basis of S2 along the outer side surface (3) of the probe tip substrate in the horizontal direction;
s4: and placing the silicon-based probe cantilever (1) at an included angle of 30 degrees with the vertical direction, and sputtering and depositing a magnetic shielding layer (7) on the inner side (2) of the probe body and the cantilever (1) on the basis of S3 along the inner side (2) of the probe body tip base body in the horizontal direction.
2. The method for preparing a magnetic probe with high uniformity as claimed in claim 1, wherein in the S1, the radius of curvature of the silicon-based probe tip (4) is detected by using SEM.
3. The method for preparing a highly uniform magnetic probe according to any of claims 1 or 2, wherein in S1, a probe having a radius of curvature within 15nm is selected.
4. The method for preparing a magnetic probe with high uniformity according to claim 1, wherein in the step S2, the passivation layer (5) is a Si thin film layer.
5. The method according to claim 4, wherein the Si thin film layer is deposited to a thickness of 20-40 nm.
6. The method for preparing a magnetic probe with high uniformity as claimed in claim 1, wherein in S3, the magnetic induction layer (6) is a Ni thin film layer.
7. The method for preparing a highly uniform magnetic probe according to claim 6, wherein the deposition thickness of the Ni thin film layer is 30-50 nm.
8. The method for preparing a magnetic probe with high uniformity as claimed in claim 1, wherein in S4, the magnetic shielding layer (7) is a Cu thin film layer.
9. The method as claimed in claim 8, wherein the Cu thin film layer is deposited to a thickness of 3-5 nm.
10. A magnetic probe with high uniformity, which is prepared by the preparation method of any one of claims 1 to 9, comprising a probe body; a passivation layer (5) uniformly deposited on the needle tip of the probe body and the surface of the cantilever (1); a magnetic induction layer (6) deposited on the needle tip of the probe body and the outer side surface (3) of the substrate; and a magnetic shielding layer (7) deposited on the inner side surface (2) of the tip substrate of the probe body and the cantilever.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911379941.XA CN111089988B (en) | 2019-12-27 | 2019-12-27 | High-uniformity magnetic probe and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911379941.XA CN111089988B (en) | 2019-12-27 | 2019-12-27 | High-uniformity magnetic probe and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111089988A true CN111089988A (en) | 2020-05-01 |
| CN111089988B CN111089988B (en) | 2023-01-31 |
Family
ID=70397427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911379941.XA Active CN111089988B (en) | 2019-12-27 | 2019-12-27 | High-uniformity magnetic probe and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111089988B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113391101A (en) * | 2021-04-25 | 2021-09-14 | 西安交通大学 | Shell-core microprobe and preparation method thereof |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821870A (en) * | 1994-07-06 | 1996-01-23 | Hitachi Ltd | Scanning surface magnetism detecting device |
| JPH09152474A (en) * | 1995-11-30 | 1997-06-10 | Sumitomo Metal Ind Ltd | Magnetic probe and its manufacture |
| CN1461820A (en) * | 2002-05-31 | 2003-12-17 | 中国科学院上海原子核研究所 | Method of depositing film on cantilever and its needle tip of microscope |
| JP2004340741A (en) * | 2003-05-15 | 2004-12-02 | Fujitsu Ltd | Magnetic probe and its manufacturing method |
| US20050211915A1 (en) * | 2001-12-21 | 2005-09-29 | Stichting Voor De Technische Wetenschappen | Probe for an atomic force microscope and method for making such a probe |
| CN1811944A (en) * | 2005-01-15 | 2006-08-02 | 三星电子株式会社 | Semiconductor probe with resistive tip and method of fabricating the same |
| CN101643195A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院生态环境研究中心 | Method and device for preparing colloid probe |
| CN102175894A (en) * | 2010-12-24 | 2011-09-07 | 北京大学 | Method for preparing miniature thermocouple probe of scanning thermal microscopy |
| US20120291161A1 (en) * | 2011-05-09 | 2012-11-15 | Zhang Kaifeng | Cantilever for magnetic force microscope and method of manufacturing the same |
| CN102817006A (en) * | 2012-08-28 | 2012-12-12 | 上海交通大学 | Method for gold film modification of atomic force microscope probe by magnetron sputtering |
| CN103011071A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Preparation method of metal nano needle tip with sharp end of small curvature radius |
| CN104764905A (en) * | 2015-03-24 | 2015-07-08 | 清华大学深圳研究生院 | Atomic force microscope scanning thermal probe and preparation method thereof |
| CN106597026A (en) * | 2016-12-09 | 2017-04-26 | 中国科学院宁波材料技术与工程研究所 | Magneto-electro-thermo multi-parameter coupling microscope probe, and preparation method and detection method thereof |
| CN107782918A (en) * | 2016-08-29 | 2018-03-09 | 苏州泰岩新材料有限公司 | A kind of magnetics atomic force microscope probe using magnetic nanometer |
| CN110333372A (en) * | 2019-07-18 | 2019-10-15 | 中国科学院宁波材料技术与工程研究所 | A kind of magnetic scanning microscope probe and preparation method thereof |
-
2019
- 2019-12-27 CN CN201911379941.XA patent/CN111089988B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821870A (en) * | 1994-07-06 | 1996-01-23 | Hitachi Ltd | Scanning surface magnetism detecting device |
| JPH09152474A (en) * | 1995-11-30 | 1997-06-10 | Sumitomo Metal Ind Ltd | Magnetic probe and its manufacture |
| US20050211915A1 (en) * | 2001-12-21 | 2005-09-29 | Stichting Voor De Technische Wetenschappen | Probe for an atomic force microscope and method for making such a probe |
| CN1461820A (en) * | 2002-05-31 | 2003-12-17 | 中国科学院上海原子核研究所 | Method of depositing film on cantilever and its needle tip of microscope |
| JP2004340741A (en) * | 2003-05-15 | 2004-12-02 | Fujitsu Ltd | Magnetic probe and its manufacturing method |
| CN1811944A (en) * | 2005-01-15 | 2006-08-02 | 三星电子株式会社 | Semiconductor probe with resistive tip and method of fabricating the same |
| CN101643195A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院生态环境研究中心 | Method and device for preparing colloid probe |
| CN102175894A (en) * | 2010-12-24 | 2011-09-07 | 北京大学 | Method for preparing miniature thermocouple probe of scanning thermal microscopy |
| US20120291161A1 (en) * | 2011-05-09 | 2012-11-15 | Zhang Kaifeng | Cantilever for magnetic force microscope and method of manufacturing the same |
| CN102817006A (en) * | 2012-08-28 | 2012-12-12 | 上海交通大学 | Method for gold film modification of atomic force microscope probe by magnetron sputtering |
| CN103011071A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Preparation method of metal nano needle tip with sharp end of small curvature radius |
| CN104764905A (en) * | 2015-03-24 | 2015-07-08 | 清华大学深圳研究生院 | Atomic force microscope scanning thermal probe and preparation method thereof |
| CN107782918A (en) * | 2016-08-29 | 2018-03-09 | 苏州泰岩新材料有限公司 | A kind of magnetics atomic force microscope probe using magnetic nanometer |
| CN106597026A (en) * | 2016-12-09 | 2017-04-26 | 中国科学院宁波材料技术与工程研究所 | Magneto-electro-thermo multi-parameter coupling microscope probe, and preparation method and detection method thereof |
| CN110333372A (en) * | 2019-07-18 | 2019-10-15 | 中国科学院宁波材料技术与工程研究所 | A kind of magnetic scanning microscope probe and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113391101A (en) * | 2021-04-25 | 2021-09-14 | 西安交通大学 | Shell-core microprobe and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111089988B (en) | 2023-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4688400B2 (en) | Probe for scanning probe microscope | |
| US9110055B2 (en) | Nanoscale sensors | |
| CN109633210B (en) | Method for measuring size of thin film based on near-field microwave microscope system | |
| CN111089988B (en) | High-uniformity magnetic probe and preparation method thereof | |
| JP5295047B2 (en) | Method for measuring dielectric constant using scanning probe microscope | |
| Azzam et al. | Fabrication of a surface plasmon resonance biosensor based on gold nanoparticles chemisorbed onto a 1, 10-decanedithiol self-assembled monolayer | |
| US20070018098A1 (en) | Nanotube probe and method for manufacturing the same | |
| Bonnauron et al. | High aspect ratio diamond microelectrode array for neuronal activity measurements | |
| CN106017296B (en) | Method for measuring thickness of covering layer on surface of conductive material substrate with uneven conductivity | |
| CN113504394B (en) | Wafer level preparation method of coating probe and coating probe | |
| CN102320566A (en) | Method for preparing three-dimensional nano space electrode by adopting self-alignment forming | |
| CN107782918A (en) | A kind of magnetics atomic force microscope probe using magnetic nanometer | |
| CN104931741B (en) | Microprobe and preparation method thereof | |
| CN107782919A (en) | A kind of electricity atomic force microscope probe using conducting nanowires | |
| US9465048B1 (en) | Probe unit for test tools and method of manufacturing the same | |
| CN110596428A (en) | Scanning area plane inclination correction method applied to near-field scanning microwave microscope | |
| JP4858924B2 (en) | Creating a probe for a scanning probe microscope | |
| Permiakov et al. | New opportunities of atomic force microscopy probes upon polyaniline functionalization | |
| Borghi et al. | Quantitative Analysis of gold nano-aggregates by combining electron and probe microscopy techniques | |
| CN219798241U (en) | Coating film thickness measuring device | |
| WO2009014801A2 (en) | Scanning nanotube probe device and associated method | |
| CN116465317A (en) | Sputtering film layer detection device and detection method | |
| CN220455348U (en) | Tuning fork needle tip for atomic force microscope | |
| CN107436366A (en) | A kind of long-life high-resolution electricity atomic force microscope probe | |
| CN108931667A (en) | Have both the flying-spot microscope probe and preparation method thereof of electricity and magnetics signal acquisition function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |