CN109844963A - 背面入射型受光元件及光模块 - Google Patents

背面入射型受光元件及光模块 Download PDF

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CN109844963A
CN109844963A CN201680090354.7A CN201680090354A CN109844963A CN 109844963 A CN109844963 A CN 109844963A CN 201680090354 A CN201680090354 A CN 201680090354A CN 109844963 A CN109844963 A CN 109844963A
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connecting hole
substrate
receiving element
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竹村亮太
大畠伸夫
笹畑圭史
山路和树
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Mitsubishi Electric Corp
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Abstract

衬底(1)具有表面和与表面相对的背面。在衬底(1)的表面依次层叠有n型层(2)、倍增层(3)、p型电场控制层(4)、光吸收层(5)以及窗口层(6)。在窗口层(6)的一部分形成有p型区域(7)。阳极电极(8)形成于p型区域(7)之上，与p型区域(7)连接。阳极焊盘(9)以及阴极焊盘(10)形成于衬底(1)的背面。第1连接孔(11)以及第2连接孔(12)贯穿衬底(1)。第3连接孔(13)从窗口层(6)贯穿至n型层(2)。阴极焊盘(10)经由第1连接孔(11)与n型层(2)电连接。阳极焊盘(9)经由第2连接孔(12)以及第3连接孔(13)与阳极电极(8)电连接。在衬底(1)的背面具有受光区域(16)。

Description

背面入射型受光元件及光模块
技术领域
本发明涉及光纤通信等中使用的背面入射型受光元件以及光模块。
背景技术
半导体受光元件的构造大致分为：从半导体衬底之上的外延生长层的表面侧射入光的表面入射型、从外延生长层的侧面射入光的端面入射型、从半导体衬底的背面侧射入光的背面入射型。
通常，半导体受光元件仅在pn结区域能够获得受光灵敏度，pn结区域的尺寸大则容易对光进行调芯，安装性优越。另一方面，如果pn结区域变大则元件电容增加、时间常数变大，因此在高速响应性的方面是不利的。
由于背面入射型受光元件易于降低寄生电容，因此能够相应地增大pn结区域，易于兼顾安装的容易性和由元件电容降低带来的高速动作化这两者。因此，特别是在大于或等于10Gbps的高速通信用途中成为通常的构造。另外，背面入射型受光元件使从衬底背面侧射入的光由电极金属镜进行反射而再次返回吸收层而有助于光吸收，所以容易得到高的量子效率。公开有使用上述的背面入射型受光元件的光模块(例如，参照专利文献1、2)。
专利文献1：日本特开2014-192510号公报
专利文献2：日本特开2011-253904号公报
背面入射型受光元件的阳极、阴极形成于衬底的表面侧。因此，阳极、阴极是使用焊料或Au凸块等芯片接合于在载体(submount)形成的金属图案，向各个金属图案打线。但是，由于需要将用于打线的图案形成于载体之上，因此存在载体的尺寸变大的问题。
另外，就TIA或电容器等其他电路部件与背面入射型受光元件之间的连接路径而言，从Au导线经过介电常数不同的载体之上的配线图案。因此，存在高频反射点增加，成为共振的原因而使接收灵敏度降低这样的问题。
发明内容
本发明是为了解决上述课题而提出的，其目的在于得到能够降低尺寸、提高接收灵敏度的背面入射型受光元件以及光模块。
本发明涉及的背面入射型受光元件，其特征在于，具备：衬底，其具有表面和与所述表面相对的背面；n型层、倍增层、p型电场控制层、光吸收层及窗口层，它们依次层叠于所述表面；P型区域，其形成于所述窗口层的一部分；阳极电极，其形成于所述p型区域之上，与所述p型区域连接；以及阳极焊盘以及阴极焊盘，它们形成于所述背面，第1连接孔以及第2连接孔贯穿所述衬底，第3连接孔从所述窗口层贯穿至所述n型层，所述阴极焊盘经由所述第1连接孔与所述n型层电连接，所述阳极焊盘经由所述第2连接孔以及所述第3连接孔与所述阳极电极电连接，在所述背面具有受光区域。
发明的效果
在本发明中，由于阳极焊盘以及阴极焊盘形成于衬底背面侧，因此能够将用于与其他电路部件连接的导线直接打至背面入射型受光元件的衬底背面。由此，不需要载体之上的图案，因此能够缩小载体的尺寸。另外，没有高频反射点，不易引起共振等，因此能够提高接收灵敏度。
附图说明
图1是表示本发明的实施方式1涉及的背面入射型受光元件的剖视图。
图2是表示本发明的实施方式1涉及的光模块的俯视图。
图3是表示本发明的实施方式1涉及的光模块的主要部分的斜视图。
图4是表示使用了对比例涉及的背面入射型受光元件的光模块的斜视图。
图5是表示本发明的实施方式2涉及的背面入射型受光元件的剖视图。
图6是表示本发明的实施方式3涉及的背面入射型受光元件的剖视图。
图7是表示本发明的实施方式4涉及的背面入射型受光元件的剖视图。
图8是表示本发明的实施方式5涉及的背面入射型受光元件的剖视图。
具体实施方式
参照附图对本发明的实施方式涉及的背面入射型受光元件以及光模块进行说明。对于相同或对应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示本发明的实施方式1涉及的背面入射型受光元件的剖视图。衬底1是具有表面和与表面相对的背面的半绝缘性InP衬底。在衬底1的表面依次层叠有n型层2、AlInAs的倍增层3、InP的p型电场控制层4、InGaAs的光吸收层5、以及InP的窗口层6。在窗口层6的一部分形成有p型区域7。阳极电极8形成于p型区域7之上，与p型区域7连接。
阳极焊盘9以及阴极焊盘10形成于衬底1的背面。通过蚀刻形成有将衬底1贯穿的第1连接孔11以及第2连接孔12。从窗口层6贯穿至n型层2的第3连接孔13是通过蚀刻以至少一部分与第2连接孔12相连的方式形成的。InP的窗口层6的上表面和第3连接孔13的内侧面由SiN等钝化膜14覆盖。
阴极焊盘10经由第1连接孔11与n型层2电连接。阳极焊盘9经由第2连接孔12以及第3连接孔13内的阳极配线15而与阳极电极8电连接。在阳极焊盘9以及阴极焊盘10以外的区域，在衬底1的背面具有受光区域16。
图2是表示本发明的实施方式1涉及的光模块的俯视图。图3是表示本发明的实施方式1涉及的光模块的主要部分的斜视图。在罐式封装体的承载件(carrier)17之上通过焊料固定有载体18、TIA 19(跨阻放大器)、以及电容器20。使受光区域16朝上地将背面入射型受光元件21固定于载体18之上。阳极焊盘9通过Au导线22与TIA 19的键合焊盘23连接。阴极焊盘10通过Au导线24与电容器20的键合焊盘25连接。电容器20通过Au导线26与引线端子27连接。TIA 19通过Au导线28与引线端子29连接。此外，不限于此，也可以是背面入射型受光元件21的阴极焊盘10以及阳极焊盘9与电阻或引线端子等其他电路部件连接。
接着，与对比例进行比较来说明本实施方式的效果。图4是使用了对比例涉及的背面入射型受光元件的光模块的斜视图。对比例涉及的背面入射型受光元件21的阳极、阴极形成于衬底表面侧。因此，需要将用于引出阳极、阴极而打线的金属图案30、31形成于载体18之上，所以载体18的尺寸变大。另外，高频反射点增加，成为共振的原因而使接收灵敏度降低。
另一方面，就本实施方式涉及的背面入射型受光元件21而言，阳极焊盘9以及阴极焊盘10形成于衬底背面侧，因此，能够将用于与其他电路部件连接的导线直接打至背面入射型受光元件21的衬底背面。由此，不需要载体18之上的图案，因此能够缩小载体18的尺寸。另外，由于高频反射点消失，不易引起共振等，因此能够提高接收灵敏度。
此外，p型电场控制层4也可以是AlInAs。光吸收层5只要是相对于入射光而带隙小的材料即可，也可以并非是InGaAs而是InGaAsP等。窗口层6只要是相对于入射光而带隙大的材料即可，也可以是AlInAs、AlGaInAs、InGaAsP等。也可以在p型区域7和阳极电极8之间，形成用于降低接触电阻的AlGaInAs、InGaAsP、InGaAs等。也可以在受光区域16局部地通过绝缘膜等形成AR涂层。只要能够得到动作所需的特性，各层可以使用任意材料，上述的材料并不对本发明的范围造成限定。另外，p型区域7的制法也没有特别限定，通过热扩散、离子注入等形成即可。
实施方式2.
图5是表示本发明的实施方式2涉及的背面入射型受光元件的剖视图。从光吸收层至n型层受到蚀刻，通过包含Fe-InP或Ru-InP的半绝缘性层32填埋。第3连接孔13形成于半绝缘性层32。由此，扩大了阳极配线15和半导体层之间的距离，因此可靠性提高。其他结构以及效果与实施方式1相同。
实施方式3.
图6是表示本发明的实施方式3涉及的背面入射型受光元件的剖视图。在n型层2和倍增层3之间***有蚀刻阻挡层33而并非InP。在从衬底侧进行蚀刻而形成第2连接孔12时、以及从外延面侧进行蚀刻而形成第3连接孔13时，能够进行选择蚀刻。因此，能够容易地形成第2连接孔12以及第3连接孔13。其他结构以及效果与实施方式1相同。
实施方式4.
图7是表示本发明的实施方式4涉及的背面入射型受光元件的剖视图。在衬底1与阳极焊盘9、阴极焊盘10之间形成有绝缘膜34。由此，衬底1的极性不受限，因此能够使用导电性衬底。另外，由于能够不依赖于衬底的极性地形成阳极焊盘9以及阴极焊盘10，因此制作变得容易。其他结构以及效果与实施方式3相同。
实施方式5.
图8是表示本发明的实施方式5涉及的背面入射型受光元件的剖视图。第2连接孔12以及第3连接孔13连续地从衬底1贯穿至窗口层6。由此，无需从衬底两侧进行蚀刻，因此制造变得容易。其他结构以及效果与实施方式1相同。
标号的说明
1衬底，2n型层，3倍增层，4p型电场控制层，5光吸收层，6窗口层，7p型区域，8阳极电极，9阳极焊盘，10阴极焊盘，11第1连接孔，12第2连接孔，13第3连接孔，16受光区域，18载体，19TIA(第2电路部件)，20电容器(第1电路部件)，21背面入射型受光元件，22Au导线(第2导线)，24Au导线(第1导线)，32半绝缘性层，33蚀刻阻挡层，34绝缘膜。

Claims (6)

1.一种背面入射型受光元件，其特征在于，具备：
衬底，其具有表面和与所述表面相对的背面；
n型层、倍增层、p型电场控制层、光吸收层及窗口层，它们依次层叠于所述表面；
P型区域，其形成于所述窗口层的一部分；
阳极电极，其形成于所述p型区域之上，与所述p型区域连接；以及
阳极焊盘以及阴极焊盘，它们形成于所述背面，
第1连接孔以及第2连接孔贯穿所述衬底，
第3连接孔从所述窗口层贯穿至所述n型层，
所述阴极焊盘经由所述第1连接孔与所述n型层电连接，
所述阳极焊盘经由所述第2连接孔以及所述第3连接孔与所述阳极电极电连接，
在所述背面具有受光区域。
2.根据权利要求1所述的背面入射型受光元件，其特征在于，
从所述窗口层至所述n型层受到蚀刻，通过半绝缘性层填埋，
所述第3连接孔形成于所述半绝缘性层。
3.根据权利要求1或2所述的背面入射型受光元件，其特征在于，
还具备蚀刻阻挡层，该蚀刻阻挡层***至所述n型层和所述倍增层之间。
4.根据权利要求1所述的背面入射型受光元件，其特征在于，
所述第2连接孔以及所述第3连接孔连续地从所述衬底贯穿至所述窗口层。
5.根据权利要求1～4中任一项所述的背面入射型受光元件，其特征在于，
还具备绝缘膜，该绝缘膜形成于所述衬底与所述阳极焊盘、所述阴极焊盘之间，
所述衬底是导电性衬底。
6.一种光模块，其特征在于，具备：
载体；
权利要求1～5中任一项所述的背面入射型受光元件，其以所述受光区域朝上的方式固定于所述载体之上；
第1电路部件及第2电路部件；
第1导线，其将所述阴极焊盘与第1电路部件连接；以及
第2导线，其将所述阳极焊盘与第2电路部件连接。
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