CN105280732A - 受光元件 - Google Patents

受光元件 Download PDF

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CN105280732A
CN105280732A CN201510419547.XA CN201510419547A CN105280732A CN 105280732 A CN105280732 A CN 105280732A CN 201510419547 A CN201510419547 A CN 201510419547A CN 105280732 A CN105280732 A CN 105280732A
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substrate
light absorbing
absorbing zone
diffusion layer
photo detector
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CN105280732B (zh
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菊地真人武
中路雅晴
竹村亮太
山路和树
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Mitsubishi Electric Corp
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    • H01L31/02—Details
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract

本发明的目的在于提供一种受光元件，该受光元件能够加快响应速度，并且能够防止正极电极与负极电极的短路。本发明的受光元件具备：第1导电型的衬底；第1导电型的光吸收层，其在该衬底上形成，与该衬底相比带隙较小；第2导电型的扩散层，其在该光吸收层的一部分上形成；第1导电型的窗口层，其在该光吸收层上以包围该扩散层的方式形成，与该光吸收层相比带隙较大；正极电极，其在该扩散层上形成；以及负极电极，其在该衬底上，以不与该窗口层和该光吸收层接触，而与该衬底接触的方式设置，该受光元件形成有槽，该槽在俯视观察时包围该扩散层与该窗口层之间的边界，在剖视观察时贯通该窗口层和该光吸收层。

Description

受光元件
技术领域
本发明涉及一种在例如光通信等中使用的受光元件。
背景技术
在专利文献1中公开了一种受光元件，该受光元件在衬底的上表面侧具有正极电极，在衬底的下表面具有负极电极。在专利文献2中公开了一种受光元件，该受光元件在衬底的上表面侧具有正极电极和负极电极。
专利文献1：日本特开2010－45417号公报
专利文献2：日本特开2007－88496号公报
为了加快受光元件的响应速度，必须排除“响应慢的电流成分”，该“响应慢的电流成分”是从光入射至受光元件起经过一定时间后产生的电流成分。在专利文献1所公开的受光元件中，具有如下问题，即，衬底的厚度越厚，则载流子的行进距离越长，响应速度越慢。在专利文献2所公开的受光元件中，正极电极与负极电极相邻，因而它们有可能短路。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于提供一种受光元件，该受光元件能够加快响应速度，并且能够防止正极电极与负极电极的短路。
本发明所涉及的受光元件的特征在于，具备：第1导电型的衬底；第1导电型的光吸收层，其在该衬底上形成，与该衬底相比带隙较小；第2导电型的扩散层，其在该光吸收层的一部分上形成；第1导电型的窗口层，其在该光吸收层上以包围该扩散层的方式形成，与该光吸收层相比带隙较大；正极电极，其在该扩散层上形成；以及负极电极，其在该衬底上，以不与该窗口层和该光吸收层接触，而与该衬底接触的方式设置，该受光元件形成有槽，该槽在俯视观察时包围该扩散层与该窗口层之间的边界，在剖视观察时贯通该窗口层和该光吸收层。
本发明所涉及的其他受光元件的特征在于，具备：第1导电型的衬底；第1导电型的光吸收层，其在该衬底上形成，与该衬底相比带隙较小；第2导电型的扩散层，其在该光吸收层的一部分上形成；第1导电型的窗口层，其在该光吸收层上以包围该扩散层的方式形成，与该光吸收层相比带隙较大；正极电极，其在该扩散层上形成；负极电极，其在该衬底上，以不与该窗口层和该光吸收层接触，而与该衬底接触的方式设置；以及离子注入部，其在俯视观察时包围该扩散层与该窗口层之间的边界，在剖视观察时贯通该窗口层和该光吸收层，阻断载流子的流动。
发明的效果
根据本发明，通过在衬底的上表面侧形成正极电极和负极电极，在正极电极与负极电极之间形成槽或离子注入部，从而能够加快响应速度，并且能够防止正极电极与负极电极的短路。
附图说明
图1是本发明的实施方式1所涉及的受光元件的剖视图。
图2是图1的受光元件的俯视图。
图3是本发明的实施方式2所涉及的受光元件的剖视图。
图4是本发明的实施方式3所涉及的受光元件的剖视图。
图5是图4的受光元件的俯视图。
标号的说明
10受光元件，12衬底，14光吸收层，16扩散层，18窗口层，20、22槽，23边界，24绝缘膜，26正极电极，28负极电极，30金属掩模，32低反射膜，60外延层，62低反射膜，70离子注入部
具体实施方式
参照附图，对本发明的实施方式所涉及的受光元件进行说明。对于相同或相对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是本发明的实施方式1所涉及的受光元件10的剖视图。受光元件10具备第1导电型的衬底12。衬底12例如是n型的InP。在衬底12上形成有第1导电型的光吸收层14。光吸收层14与衬底12相比带隙较小。光吸收层14例如是n型的InGaAs。
在光吸收层14的一部分上形成有第2导电型的扩散层16。扩散层16例如是p型的InP。在光吸收层14上形成有第1导电型的窗口层18。窗口层18在俯视观察时形成为包围扩散层16。窗口层18与光吸收层14相比带隙较大。窗口层18例如是n型的InP。
在衬底12的上表面侧形成有槽20、22。槽20在俯视观察时包围扩散层16与窗口层18之间的边界23，在剖视观察时贯通窗口层18和光吸收层14。槽22在槽20的外侧形成。槽22在剖视观察时贯通窗口层18和光吸收层14。
在受光元件10的上表面侧形成有绝缘膜24。绝缘膜24在窗口层18的上表面和槽20、22中形成。槽20中的绝缘膜24与窗口层18、光吸收层14、以及衬底12相接。绝缘膜24的材料例如是SiN。
绝缘膜24在扩散层16的正上方具有开口。并且，在扩散层16上形成有正极电极26。槽22中的绝缘膜24在下端部具有开口。并且，在该开口处，以与衬底12接触的方式设置有负极电极28。负极电极28设置在衬底12上(上方)。负极电极28与槽22中的绝缘膜24相接，不与窗口层18和光吸收层14接触。此外，正极电极26和负极电极28例如由Ti/Au(“/”的左侧的材料是靠近衬底的材料，以下相同)、Ti/Pt/Au、或Pt/Ti/Pt/Au等包含Ti和Au在内的层叠构造形成。
衬底12的下表面的一部分由金属掩模30覆盖。金属掩模30只要是不透光的材料即可，不作特别限定，例如由AuGe/Ni/Ti/Pt/Au或AuZn/Ti/Pt/Au等包含Ti和Au在内的层叠构造形成。金属掩模30不在扩散层16的正下方形成。即，金属掩模30在扩散层16的正下方具有开口。在该开口处，以与衬底12的下表面相接的方式形成有低反射膜32。低反射膜32只要是不反射光并使光透过的材料即可，不作特别限定，例如由Si/SiO2、Si/SiO2/Si/SiO2等Si和SiO2的层叠构造形成。
图2是图1的受光元件10的俯视图。槽20在俯视观察时包围扩散层16与窗口层18之间的边界23。边界23用虚线示出。另外，在图2中，低反射膜32的外周用虚线示出。低反射膜32的外周与槽20的内周重叠。此外，沿图2的点划线的剖视图是图1。
对受光元件10的动作进行说明。在对扩散层16与窗口层18之间的pn结、以及扩散层16与光吸收层14之间的pn结施加反向偏置而形成了耗尽层的状态下，从图1的箭头所示的方向使光入射至受光元件10。入射的光使光吸收层14中产生载流子(电子和空穴)。产生的载流子通过由耗尽层进行加速，流过正极电极26或负极电极28，从而检测出电流。
在利用光产生了载流子的情况下，优选作为电流而快速地检测出该载流子。但是，在一般的受光元件中，在载流子是在远离耗尽层(扩散层)的部位产生的情况下，载流子的移动距离变长，直至作为电流而检测出该载流子为止需要花费较长时间。进行了长距离移动的载流子从光入射至受光元件起经过一定程度的时间后才成为电流成分，因而受光元件的响应性变差。即，如果进行了长距离移动的载流子对电流做出贡献，则会产生响应慢的电流成分。
但是，在本发明的实施方式1所涉及的受光元件10中，在光入射至由槽20所包围的区域之外并产生载流子的情况下，该载流子由于槽20的存在而无法到达耗尽层。因此，即使光入射至由槽20所包围的区域之外，利用该光产生的载流子也不会对电流做出贡献。由此，能够防止响应慢的电流成分。
另外，根据光学***的设计的不同，有时将衬底12的厚度增厚至例如数百μm左右。在此情况下，如果将负极电极设置在衬底12的下表面，则载流子必须途经较厚的衬底，产生响应慢的电流成分。与此相对，本发明的实施方式1的受光元件10将负极电极28设置在衬底12的上表面侧，因而即使增厚衬底12，载流子的行进距离也不会变长。由此，能够防止响应慢的电流成分。
另外，通过在衬底12的上表面侧设置正极电极26和负极电极28，从而仅通过将受光元件10芯片键合于载体(submount)即可结束安装。另一方面，如果在衬底的下表面形成负极电极，在衬底的上表面形成正极电极，则必须在将正极电极固定于载体之后，对负极电极实施导线键合。
如果在槽20处形成负极电极，则正极电极与负极电极有可能短路。但是，根据本发明的实施方式1，在正极电极26与负极电极28之间具有槽20，因而能够避免它们短路的问题。
本发明的实施方式1所涉及的受光元件10能够进行各种变形。例如，只有入射至由槽20所包围的区域的光对电流做出贡献，因而低反射膜32的外周(金属掩模30的开口)也可以设为大于槽20的内周。由此，能够将整个pn结用于生成电流。并且，也可以省略金属掩模30，将衬底12的整个下表面作为受光面。如上述所示，通过增大金属掩模30的开口、或者省略金属掩模30，从而能够减少由金属掩模30遮挡的光，因而能够减少光－电的转换损失。
将第1导电型设为了n型，第2导电型设为了p型，但也可以将导电型调转。另外，也可以在各层的层间设置缓冲层等。这些变形能够适当地应用于下述实施方式所涉及的受光元件。此外，下述实施方式所涉及的受光元件与实施方式1的共通点较多，因而以与实施方式1的不同点为中心进行说明。
实施方式2
图3是本发明的实施方式2所涉及的受光元件的剖视图。衬底12的下表面的一部分由外延层60覆盖。外延层60只要是吸收光的材料即可，不作特别限定，例如是n型的InGaAs。外延层60在扩散层16的正下方具有开口。在该开口处形成有低反射膜62。
实施方式1的金属掩模30对光进行反射，因而反射后的光与入射的光有可能发生干涉。但是，在本发明的实施方式2中，形成有吸收光的外延层60，因而能够防止光的反射。
实施方式3
图4是本发明的实施方式3所涉及的受光元件的剖视图。该受光元件具备离子注入部70，该离子注入部70例如通过注入Ti等而形成。离子注入部70在俯视观察时包围扩散层16与窗口层18之间的边界，在剖视观察时贯通窗口层18和光吸收层14。即使光入射至离子注入部70，也不生成载流子。另外，离子注入部70阻断载流子的流动。图5是图4的受光元件的俯视图。虚线所示的离子注入部70在俯视观察时包围扩散层与窗口层之间的边界23。
离子注入部70与实施方式1的槽20具有相同的功能。并且，仅通过在形成窗口层18之后进行离子注入，就能够简单地生成离子注入部70。此外，上述说明的各实施方式所涉及的受光元件的特征也可以适当组合而进行使用。

Claims (5)

1.一种受光元件，其特征在于，
具备：
第1导电型的衬底；
第1导电型的光吸收层，其在所述衬底上形成，与所述衬底相比带隙较小；
第2导电型的扩散层，其在所述光吸收层的一部分上形成；
第1导电型的窗口层，其在所述光吸收层上以包围所述扩散层的方式形成，与所述光吸收层相比带隙较大；
正极电极，其在所述扩散层上形成；以及
负极电极，其在所述衬底上，以不与所述窗口层和所述光吸收层接触，而与所述衬底接触的方式设置，
所述受光元件形成有槽，该槽在俯视观察时包围所述扩散层与所述窗口层之间的边界，在剖视观察时贯通所述窗口层和所述光吸收层。
2.一种受光元件，其特征在于，
具备：
第1导电型的衬底；
第1导电型的光吸收层，其在所述衬底上形成，与所述衬底相比带隙较小；
第2导电型的扩散层，其在所述光吸收层的一部分上形成；
第1导电型的窗口层，其在所述光吸收层上以包围所述扩散层的方式形成，与所述光吸收层相比带隙较大；
正极电极，其在所述扩散层上形成；
负极电极，其在所述衬底上，以不与所述窗口层和所述光吸收层接触，而与所述衬底接触的方式设置；以及
离子注入部，其在俯视观察时包围所述扩散层与所述窗口层之间的边界，在剖视观察时贯通所述窗口层和所述光吸收层，阻断载流子的流动。
3.根据权利要求1或2所述的受光元件，其特征在于，
所述衬底的整个下表面成为受光面。
4.根据权利要求1或2所述的受光元件，其特征在于，
具备金属掩模，该金属掩模覆盖所述衬底的下表面的一部分。
5.根据权利要求1或2所述的受光元件，其特征在于，
具备外延层，该外延层覆盖所述衬底的下表面的一部分，对光进行吸收。
CN201510419547.XA 2014-07-16 2015-07-16 受光元件 Active CN105280732B (zh)

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