JPWO2018078788A1 - 裏面入射型受光素子及び光モジュール - Google Patents
裏面入射型受光素子及び光モジュール Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims description 12
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- 238000005530 etching Methods 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
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- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
Description
図1は、本発明の実施の形態1に係る裏面入射型受光素子を示す断面図である。基板1は表面と表面に対向する裏面とを有する半絶縁性InP基板である。基板1の表面にn型層2、AlInAsの増倍層3、InPのp型電界制御層4、InGaAsの光吸収層5、及びInPの窓層6が順に積層されている。窓層6の一部にp型領域7が形成されている。アノード電極8がp型領域7の上に形成され、p型領域7に接続されている。
図5は、本発明の実施の形態2に係る裏面入射型受光素子を示す断面図である。光吸収層からn型層までエッチングされてFe−InP又はRu−InPを含む半絶縁性層32で埋め込まれている。第3の接続孔13は半絶縁性層32に形成されている。これにより、アノード配線15と半導体層との距離が拡がるため、信頼が向上する。その他の構成及び効果は実施の形態1と同様である。
図6は、本発明の実施の形態3に係る裏面入射型受光素子を示す断面図である。n型層2と増倍層3との間にInPでないエッチングストッパ層33が挿入されている。基板側からエッチングして第2の接続孔12を形成する時、及びエピ面側からエッチングして第3の接続孔13を形成する時に選択エッチングが可能となる。このため、第2及び第3の接続孔12,13を容易に形成することができる。その他の構成及び効果は実施の形態1と同様である。
図7は、本発明の実施の形態4に係る裏面入射型受光素子を示す断面図である。基板1とアノードパッド9及びカソードパッド10との間に絶縁膜34が形成されている。これにより、基板1の極性が不問となるため、導電性基板を用いることができる。また、基板の極性に依らずにアノードパッド9及びカソードパッド10を形成できるため、作製が容易になる。その他の構成及び効果は実施の形態3と同様である。
図8は、本発明の実施の形態5に係る裏面入射型受光素子を示す断面図である。第2及び第3の接続孔12,13は基板1から窓層6まで一続きに貫通する。これにより、基板両側からエッチングせずに済むため、作製が容易になる。その他の構成及び効果は実施の形態1と同様である。
Claims (6)
- 表面と前記表面に対向する裏面とを有する基板と、
前記表面に順に積層されたn型層、増倍層、p型電界制御層、光吸収層、及び窓層と、
前記窓層の一部に形成されたp型領域と、
前記p型領域の上に形成され、前記p型領域に接続されたアノード電極と、
前記裏面に形成されたアノードパッド及びカソードパッドとを備え、
第1及び第2の接続孔が前記基板を貫通し、
第3の接続孔が前記窓層から前記n型層まで貫通し、
前記カソードパッドは前記第1の接続孔を介して前記n型層に電気的に接続され、
前記アノードパッドは前記第2及び第3の接続孔を介して前記アノード電極に電気的に接続され、
前記裏面に受光領域を有することを特徴とする裏面入射型受光素子。 - 前記窓層から前記n型層までエッチングされて半絶縁性層で埋め込まれ、
前記第3の接続孔は前記半絶縁性層に形成されていることを特徴とする請求項1に記載の裏面入射型受光素子。 - 前記n型層と前記増倍層との間に挿入されたエッチングストッパ層を更に備えることを特徴とする請求項1又は2に記載の裏面入射型受光素子。
- 前記第2及び第3の接続孔は前記基板から前記窓層まで一続きに貫通することを特徴とする請求項1に記載の裏面入射型受光素子。
- 前記基板と前記アノードパッド及び前記カソードパッドとの間に形成された絶縁膜を更に備え、
前記基板は導電性基板であることを特徴とする請求項1〜4の何れか1項に記載の裏面入射型受光素子。 - サブマウントと、
前記サブマウントの上に前記受光領域を上にして固定された請求項1〜5の何れか1項に記載の裏面入射型受光素子と、
第1及び第2の回路部品と、
前記カソードパッドを第1の回路部品に接続する第1のワイヤと、
前記アノードパッドを第2の回路部品に接続する第2のワイヤとを備えることを特徴とする光モジュール。
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CN116420235A (zh) * | 2021-01-26 | 2023-07-11 | 住友电气工业株式会社 | 光接收器 |
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JP2013122989A (ja) * | 2011-12-12 | 2013-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 受光素子 |
JP2016039315A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社東芝 | 固体撮像素子 |
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JP2016039315A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社東芝 | 固体撮像素子 |
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