CN109638174B - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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CN109638174B
CN109638174B CN201811343328.8A CN201811343328A CN109638174B CN 109638174 B CN109638174 B CN 109638174B CN 201811343328 A CN201811343328 A CN 201811343328A CN 109638174 B CN109638174 B CN 109638174B
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thin film
film transistor
heat
substrate
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CN109638174A (zh
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丁武
李松杉
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/319,474 priority patent/US10861919B2/en
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Abstract

本申请提供一种OLED显示面板及其制作方法，其包括基板、保温层、缓冲层、驱动薄膜晶体管和存储电容，基板包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和驱动薄膜晶体管对应的存储电容的设置区域；保温层形成在设置区域上；缓冲层形成在基板上；驱动薄膜晶体管形成在缓冲层对应于设置区域的位置上；存储电容形成在缓冲层对应于设置区域的位置上。本申请通过在基板上的设置区域设置保温层，防止了非晶硅膜层在退火处理进行结晶时热量快速散失，使得驱动薄膜晶体管和存储电容处的非晶硅膜层充分结晶，增大晶粒和提高了晶粒的均一性，从而提高了驱动薄膜晶体管电性的均一性。

Description

OLED显示面板及其制作方法
技术领域
本申请涉及一种显示技术，特别涉及一种OLED显示面板及其制作方法。
背景技术
随着在传统的低温多晶硅薄膜晶体管(Low Temperature PolycrystallineSilicon Thin Film Transistors，LTPS-TFT)的制作过程中，在基板上会连续沉积3个膜层的缓冲层，分别为SiNx膜层、SiOx膜层、非晶硅膜层(amorphous silicon，a-Si)，接着利用准分子镭射退火(Excimer Laser Anneal，ELA)对a-Si进行退火结晶形成LTPS，但是形成的LTPS晶粒大小均一性较差，晶界较多，导致开关薄膜晶体管(Switch TFT)和驱动薄膜晶体管(Drive TFT)的电性均一性较差，尤其严重影响Drive TFT的电性均一性，而Driver TFT直接影响有机发光二极管(Organic Light Emitting Diode，OLED)器件的发光特性，进行严重影响LTPS的良率。
发明内容
本申请实施例提供一种OLED显示面板及其制作方法，以解决现有的LTPS-TFT中LTPS晶粒大小均一性差，晶界较多，导致Drive TFT的电性均一性差的技术问题。
本申请实施例提供一种OLED显示面板，其包括：
基板，包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和所述驱动薄膜晶体管对应的存储电容的设置区域；
保温层，包括至少一层保温子层，形成在所述设置区域上；
缓冲层，形成在所述基板上，并覆盖所述保温层；
所述驱动薄膜晶体管，形成在所述缓冲层对应于所述设置区域的位置上；以及
所述存储电容，形成在所述缓冲层对应于所述设置区域的位置上；
其中，所述驱动薄膜晶体管和存储电容均包括形成在所述缓冲层上的多晶硅层，所述保温层用于提高非晶硅在结晶成为多晶硅层时热量的稳定性。
在本申请的OLED显示面板的第一实施例中，所述保温层由一层保温子层构成。
在本申请的OLED显示面板的第二实施例中，所述保温层包括设置在所述基板上的第一保温子层和设置在所述第一保温子层上的第二保温子层，所述第一保温子层的材质和所述第二保温子层的材质不同。
在本申请的OLED显示面板的第二实施例中，所述缓冲层包括覆盖所述第二保温子层上的第一缓冲子层，其中，所述第一缓冲子层的材质是SiNx，所述第一保温子层的材质是SiOx，所述第二保温子层的材质是SiOxNy。
在本申请的OLED显示面板的第二实施例中，在所述第二保温子层中，氧元素的含量大于氮元素的含量。
在本申请的第三实施例中，所述OLED显示面板包括起到开关作用的开关薄膜晶体管，所述基板对应于所述开关薄膜晶体管的区域上设置有所述保温层。
在本申请的OLED显示面板中，所述保温层的厚度介于50纳米～100纳米之间。
在本申请的OLED显示面板中，所述保温层的材料是SiOx和SiOxNy中的一种或两种材料的组合。
本申请还涉及一种OLED显示面板的制作方法，其包括：
S1：提供一基板，所述基板包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和所述驱动薄膜晶体管对应的存储电容的设置区域；
S2：在所述基板的设置区域形成一保温层，用于防止非晶硅在结晶时热量快速流失；
S3：在所述基板上依次形成缓冲层和非晶硅层；
S4：对所述非晶硅层进行镭射退火处理，以形成多晶硅层，并图案化所述多晶硅层；
S5：在所述多晶硅层上依次形成绝缘层、栅极金属层、层间介电层、源漏金属层和钝化层，以形成所述驱动薄膜晶体管和所述存储电容；
S6：在所述钝化层上依次形成平坦层、阳极、像素定义层和间隔部。
在本申请的OLED显示面板的制作方法中，在所述S2的步骤包括：
S21：在所述基板上采用等离子体增强化学气相沉积法沉积一层SiOx膜，并采用光刻工艺形成第一保温子层；
S22：在所述第一保温子层上采用等离子体增强化学气相沉积法沉积一层SiOxNy膜，并采用光刻工艺形成第二保温子层。
在本申请的OLED显示面板的制作方法中，在步骤S21中，沉积所述SiOx膜，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，反应气体SiH4和N2O的气体比为1:100到1:50之间，反应时间20s～40s之间；
沉积所述SiOxNy膜时，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，SiH4：N2O：NH3的气体比为1:100:80到1:100:120之间，反应时间20s～40s之间。
在本申请的OLED显示面板的制作方法中，在所述第二保温子层中，氧元素的含量大于氮元素的含量。
在本申请的OLED显示面板的制作方法中，所述保温层的厚度介于50纳米～100纳米之间。
相较于现有技术的OLED显示面板及其制作方法，本申请的OLED显示面板及其制作方法通过在基板上的设置区域设置保温层，防止了非晶硅膜层在退火处理进行结晶时热量快速散失，使得驱动薄膜晶体管和存储电容处的非晶硅膜层充分结晶，增大晶粒和提高了晶粒的均一性，从而提高了驱动薄膜晶体管电性的均一性，进而提高了OLED器件发光均一性；解决了现有的LTPS-TFT中LTPS晶粒大小均一性差，晶界较多，导致Drive TFT的电性均一性差的技术问题。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请的OLED显示面板的第一实施例的结构示意图；
图2为本申请的OLED显示面板的第二实施例的结构示意图；
图3为本申请的OLED显示面板的第三实施例的结构示意图；
图4为本申请的OLED显示面板的制作方法的实施例的流程图；
图5为本申请的OLED显示面板的制作方法的实施例的步骤S2的流程图。
具体实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请的OLED显示面板的第一实施例的结构示意图。本第一实施例的OLED显示面板100，其包括基板11、保温层12、缓冲层13、驱动薄膜晶体管1a、存储电容1b、平坦层15、阳极16、像素定义层17和间隔部18。
基板11包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管1a和驱动薄膜晶体管1a对应的存储电容1b的设置区域11a。保温层12包括至少一层保温子层，保温层12形成在设置区域11a上。缓冲层13形成在基板11上，并覆盖保温层12。驱动薄膜晶体管1a形成在缓冲层13对应于设置区域11a的位置上。存储电容1b形成在缓冲层13对应于设置区域11a的位置上。
其中，驱动薄膜晶体管1a和存储电容1b均包括形成在缓冲层13上的多晶硅层141，保温层12用于提高非晶硅在结晶成为多晶硅层141时热量的稳定性。
本第一实施例的OLED显示面板通过在基板11上的设置区域11a设置保温层12，防止了非晶硅膜层在退火处理进行结晶时热量快速散失，使得驱动薄膜晶体管1a和存储电容1b处的非晶硅膜层充分结晶，增大晶粒和提高了晶粒的均一性，从而提高了驱动薄膜晶体管1a电性的均一性，进而提高了OLED器件发光均一性。
本第一实施例的OLED显示面板100包括设置在缓冲层13上的多晶硅层141、设置在多晶硅层上的绝缘层142、设置在绝缘层142上的栅极金属层143、设置在栅极金属层上的层间介电层144、设置在层间介电层144上的源漏金属层145，设置在源漏金属层145上的钝化层146、设置在钝化层146上的平坦层15和依次设置在平坦层15上的阳极16、像素定义层17和间隔部18。
其中，多晶硅层141包括对应于驱动薄膜晶体管1a的有源层和组成存储电容1b的下电极板。下电极板通过对多晶硅层141进行离子掺杂形成。栅极金属层143包括对应于下电极板的上电极板1431和对应于驱动薄膜晶体管1a的栅极1432。
因此，有源层、栅极1432、源漏金属层145的源漏电极组成驱动薄膜晶体管1a，上电极板1431和下电极板组成存储电容1b。
在第一实施例中，保温层12由一层保温子层构成。保温层12的厚度介于50纳米～100纳米之间。这样的设置，一方面确保保温层12的保温效果，另一方面不影响相邻层之间的应力关系，提高保温层12和相邻层之间的稳定性。
其中，可选的，保温层的材料是SiOx和SiOxNy中的一种或两种材料的组合。需要说明的是：x和y均代表数值，比如1、2等。
本第一实施例的多晶硅层的制作过程是：在基板11上沉积一层SiOx膜(本第一实施例的保温层12以SiOx材质为例进行说明)，随后通过光刻工艺在设置区域11a上形成保温层12；接着，依次在保温层12上形成缓冲层13和非晶硅层；最后，对非晶硅层进行准分子镭射退火处理，以使非晶硅层结晶形成多晶硅层141。
在非晶硅层进行结晶的过程中，保温层12起到防止热量快速散失的作用，使得保温层12对应的多晶硅层充分结晶，提高了晶粒的均一性，进而提高了驱动薄膜晶体管1a电性的均一性。
请参照图2，图2为本申请的OLED显示面板的第二实施例的结构示意图。本第二实施例的OLED显示面板200包括基板21、保温层22、缓冲层23、驱动薄膜晶体管2a、存储电容2b、平坦层25、阳极26、像素定义层27和间隔部28。本第二实施例与第一实施例的不同之处在于：
保温层22包括设置在基板21上的第一保温子层221和设置在第一保温子层221上的第二保温子层222，第一保温子层221的材质和第二保温子层222的材质不同。
缓冲层23包括覆盖第二保温子层222上的第一缓冲子层231和设置在所述第一缓冲子层231上的第二缓冲子层232。第一缓冲子层231的材质是SiNx，第二缓冲子层232的材质为SiOx，第一保温子层221的材质是SiOx，第二保温子层222的材质是SiOxNy。
其中，将第二保温子层222设置在第一保温子层221和第一缓冲子层231之间，提高了保温层22和缓冲层23结合的稳定性。因为第一缓冲子层231的应力和第一保温子层221的应力相差相对较大，而第二保温子层222的应力介于二者之间，起到过渡的作用，提高了保温层22和缓冲层23结合的稳定性。
另外，在第二保温子层222中，氧元素的含量大于氮元素的含量。这样的设置，提高第二保温子层222对有机/无机层的粘附性，进一步提高了保温层22与缓冲层23粘结的稳定性。
第二保温子层222采用等离子体增强化学气相沉积法(PECVD)沉积形成，氧含量和氮含量可以通过调节成膜气体的流量比和能量进行调控。
请参照图3，在本第三实施例和第一实施例的不同之处在于：
OLED显示面板300还包括起到开关作用的开关薄膜晶体管3c，基板31对应于开关薄膜晶体管3c的区域上设置保温层32。将保温层32同时设置在驱动薄膜晶体管3a、和存储电容3b和开关薄膜晶体管3c的正下方，提高了三者的多晶硅层341结晶时晶粒的均一性，提高了驱动薄膜晶体管3a和开关薄膜晶体管3c的电性均一性，进一步提高OLED器件发光的均匀性。
开关薄膜晶体管3c包括多晶硅层341的有源层、栅极金属层343的栅极、源漏金属层345的源漏电极。
请参照图4，本申请还涉及一种OLED显示面板的制作方法，其包括：
S1：提供一基板，所述基板包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和所述驱动薄膜晶体管对应的存储电容的设置区域；
S2：在所述基板的设置区域形成一保温层，用于防止非晶硅在结晶时热量快速流失；
S3：在所述基板上依次形成缓冲层和非晶硅层；
S4：对所述非晶硅层进行镭射退火处理，以形成多晶硅层，并图案化所述多晶硅层；
S5：在所述多晶硅层上依次形成绝缘层、栅极金属层、层间介电层、源漏金属层和钝化层，以形成所述驱动薄膜晶体管和所述存储电容；
S6：在所述钝化层上依次形成平坦层、阳极、像素定义层和间隔部。
在本实施例的OLED显示面板的制作方法中，当对非晶硅层进行镭射退火处理，使非晶硅层结晶的过程中，保温层起到防止热量快速散失的作用，使得驱动薄膜晶体管和存储电容的非晶硅层充分结晶，形成较大的晶粒，且提高了晶粒的均一性，改善了驱动薄膜晶体管电性的均一性，进而提高了OLED发光器件的发光的均匀性。
在本实施例的OLED显示面板的制作方法中，请参照图5，在所述S2的步骤包括：
S21：在所述基板上采用等离子体增强化学气相沉积法沉积一层SiOx膜，并采用光刻工艺形成第一保温子层；
S22：在所述第一保温子层上采用等离子体增强化学气相沉积法沉积一层SiOxNy膜，并采用光刻工艺形成第二保温子层。
在本实施例的OLED显示面板的制作方法中，在步骤S21中，沉积所述SiOx膜，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，反应气体SiH4和N2O的气体比为1:100到1:50之间，反应时间20s～40s之间。
沉积所述SiOxNy膜时，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，SiH4：N2O：NH3的气体比为1:100:80到1:100:120之间，反应时间20s～40s之间。
在本实施例的OLED显示面板的制作方法中，在所述第二保温子层中，氧元素的含量大于氮元素的含量。
在本实施例的OLED显示面板的制作方法中，所述保温层的厚度介于50纳米～100纳米之间。
本实施例的OLED显示面板的制作方法制作的OLED显示面板的结构和本申请的OLED显示面板的第二实施例的结构相同，具体请参照第二实施例的内容。
相较于现有技术的OLED显示面板及其制作方法，本申请的OLED显示面板及其制作方法通过在基板上的设置区域设置保温层，防止了非晶硅膜层在退火处理进行结晶时热量快速散失，使得驱动薄膜晶体管和存储电容处的非晶硅膜层充分结晶，增大晶粒和提高了晶粒的均一性，从而提高了驱动薄膜晶体管电性的均一性，进而提高了OLED器件发光均一性；解决了现有的LTPS-TFT中LTPS晶粒大小均一性差，晶界较多，导致Drive TFT的电性均一性差的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (5)

1.一种OLED显示面板，其特征在于，包括：
基板，包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和所述驱动薄膜晶体管对应的存储电容的设置区域；
保温层，包括设置在所述基板上的第一保温子层和设置在所述第一保温子层上的第二保温子层，形成在所述设置区域上；
缓冲层，形成在所述基板上，并覆盖所述保温层；
所述驱动薄膜晶体管，形成在所述缓冲层对应于所述设置区域的位置上；以及
所述存储电容，形成在所述缓冲层对应于所述设置区域的位置上；
所述驱动薄膜晶体管和存储电容均包括形成在所述缓冲层上的多晶硅层，所述保温层用于提高非晶硅在结晶成为多晶硅层时热量的稳定性；
所述缓冲层包括覆盖所述第二保温子层上的第一缓冲子层，其中，所述第一缓冲子层的材质是SiNx，所述第一保温子层的材质是SiOx，所述第二保温子层的材质是SiOxNy；在所述第二保温子层中，氧元素的含量大于氮元素的含量。
2.根据权利要求1所述的OLED显示面板，其特征在于，所述保温层的厚度介于50纳米～100纳米之间。
3.根据权利要求1所述的OLED显示面板，其特征在于，所述OLED显示面板包括起到开关作用的开关薄膜晶体管，所述基板对应于所述开关薄膜晶体管的区域上设置有所述保温层。
4.一种OLED显示面板的制作方法，其特征在于，包括：
S1：提供一基板，所述基板包括用于设置起到驱动OLED器件发光作用的驱动薄膜晶体管和所述驱动薄膜晶体管对应的存储电容的设置区域；
S2：在所述基板的设置区域形成一保温层，用于防止非晶硅在结晶时热量快速流失；
S3：在所述基板上依次形成缓冲层和非晶硅层；
S4：对所述非晶硅层进行镭射退火处理，以形成多晶硅层，并图案化所述多晶硅层；
S5：在所述多晶硅层上依次形成绝缘层、栅极金属层、层间介电层、源漏金属层和钝化层，以形成所述驱动薄膜晶体管和所述存储电容；
S6：在所述钝化层上依次形成平坦层、阳极、像素定义层和间隔部；
在所述S2的步骤包括：
S21：在所述基板上采用等离子体增强化学气相沉积法沉积一层SiOx膜，并采用光刻工艺形成第一保温子层；
S22：在所述第一保温子层上采用等离子体增强化学气相沉积法沉积一层SiOxNy膜，并采用光刻工艺形成第二保温子层，在所述第二保温子层中，氧元素的含量大于氮元素的含量。
5.根据权利要求4所述的OLED显示面板的制作方法，其特征在于，在步骤S21中，沉积所述SiOx膜，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，反应气体SiH4和N2O的气体比为1:100到1:50之间，反应时间20s～40s之间；
沉积所述SiOxNy膜时，温度介于400℃～440℃之间，能量介于10kw～20kw之间，压强介于40Pa～80Pa之间，SiH4：N2O：NH3的气体比为1:100:80到1:100:120之间，反应时间20s～40s之间。
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CN105374882A (zh) * 2015-12-21 2016-03-02 武汉华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制备方法
CN107591410A (zh) * 2016-07-06 2018-01-16 乐金显示有限公司 包括多种类型的薄膜晶体管的有机发光显示装置及其制造方法
CN107665909A (zh) * 2016-07-27 2018-02-06 乐金显示有限公司 混合型薄膜晶体管以及使用其的有机发光显示装置
CN106548980A (zh) * 2017-02-09 2017-03-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板和显示装置

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