KR100685428B1 - 박막트랜지스터의 제조방법 - Google Patents
박막트랜지스터의 제조방법 Download PDFInfo
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- KR100685428B1 KR100685428B1 KR1020040098256A KR20040098256A KR100685428B1 KR 100685428 B1 KR100685428 B1 KR 100685428B1 KR 1020040098256 A KR1020040098256 A KR 1020040098256A KR 20040098256 A KR20040098256 A KR 20040098256A KR 100685428 B1 KR100685428 B1 KR 100685428B1
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- amorphous silicon
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000010408 film Substances 0.000 claims abstract description 103
- 239000002184 metal Substances 0.000 claims abstract description 49
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001552 radio frequency sputter deposition Methods 0.000 claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 abstract description 14
- 230000008025 crystallization Effects 0.000 abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 53
- 230000000052 comparative effect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geometry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
전력(kW) | 증착율(Å/분) | 1 스캔 당 증착 두께(Å) | ||
실험예(RF) | 비교예(DC) | 실험예(RF) | 비교예(DC) | |
0.1 | 0.78 | 10.00 | 0.16 | 2.00 |
0.2 | 1.57 | 20.00 | 0.31 | 4.00 |
0.3 | 2.36 | 30.00 | 0.47 | 6.00 |
0.7 | 3.90 | 70.00 | 0.78 | 14.0 |
Claims (9)
- 기판 상에 비정질 실리콘막을 형성하는 단계;상기 비정질 실리콘막 상에 캡핑층을 형성하는 단계;상기 캡핑층 상에 RF 스퍼터링법을 이용하여 금속막을 형성하는 단계; 및상기 금속막이 형성된 기판을 열처리하여 상기 비정질 실리콘막을 다결정 실리콘막으로 결정화하는 단계를 포함하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 금속막은 0.5 내지 2Å의 두께로 형성하는 것인 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 RF 스퍼터링법은 RF 전력밀도를 0.06 내지 0.3W/㎠로 하여 금속막을 형성하는 것인 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 RF 스퍼터링법은 상기 금속막이 1 스캔당 0.16 내지 0.80Å의 두께로 형성되는 것인 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 금속막은 Ni막인 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 캡핑층은 실리콘질화막인 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 비정질 실리콘막을 형성하기 전에, 상기 기판 상에 버퍼층을 형성하는 것을 더욱 포함하는 박막트랜지스터의 제조방법.
- 제 1 항의 제조방법으로 형성된 박막트랜지스터의 제조방법을 포함하는 평판표시장치의 제조방법.
- 제 8 항에 있어서,상기 평판표시장치의 제조방법은 액정표시장치 또는 유기전계발광표시장치의 제조방법인 평판표시장치의 제조방법.
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Application Number | Priority Date | Filing Date | Title |
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KR1020040098256A KR100685428B1 (ko) | 2004-11-26 | 2004-11-26 | 박막트랜지스터의 제조방법 |
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KR1020040098256A KR100685428B1 (ko) | 2004-11-26 | 2004-11-26 | 박막트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060059083A KR20060059083A (ko) | 2006-06-01 |
KR100685428B1 true KR100685428B1 (ko) | 2007-02-22 |
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Families Citing this family (1)
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KR102568779B1 (ko) * | 2016-05-30 | 2023-08-22 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
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