CN106469735B - 半导体装置及半导体装置的制造方法 - Google Patents
半导体装置及半导体装置的制造方法 Download PDFInfo
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- CN106469735B CN106469735B CN201610576858.1A CN201610576858A CN106469735B CN 106469735 B CN106469735 B CN 106469735B CN 201610576858 A CN201610576858 A CN 201610576858A CN 106469735 B CN106469735 B CN 106469735B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 37
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 25
- 238000003860 storage Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000003475 lamination Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 76
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 15
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 15
- 239000011800 void material Substances 0.000 claims description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 9
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 654
- 239000010410 layer Substances 0.000 description 41
- 239000013039 cover film Substances 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 4
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- -1 SiCN Chemical compound 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- AYHOQSGNVUZKJA-UHFFFAOYSA-N [B+3].[B+3].[B+3].[B+3].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] Chemical compound [B+3].[B+3].[B+3].[B+3].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] AYHOQSGNVUZKJA-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201562203046P | 2015-08-10 | 2015-08-10 | |
US62/203,046 | 2015-08-10 | ||
US15/003,919 US10109641B2 (en) | 2015-08-10 | 2016-01-22 | Semiconductor device and method for manufacturing same |
US15/003,919 | 2016-01-22 |
Publications (2)
Publication Number | Publication Date |
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CN106469735A CN106469735A (zh) | 2017-03-01 |
CN106469735B true CN106469735B (zh) | 2020-04-03 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201610576858.1A Active CN106469735B (zh) | 2015-08-10 | 2016-07-20 | 半导体装置及半导体装置的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10109641B2 (zh) |
CN (1) | CN106469735B (zh) |
TW (1) | TWI645458B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9853052B1 (en) * | 2016-09-16 | 2017-12-26 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
TWI615949B (zh) * | 2017-03-09 | 2018-02-21 | 旺宏電子股份有限公司 | 三維記憶體元件及其製造方法 |
US10312253B2 (en) | 2017-03-14 | 2019-06-04 | Macronix International Co., Ltd. | Three-dimensional memory device and method of forming the same |
JP2018157035A (ja) * | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 半導体装置、およびその製造方法 |
JP2018160612A (ja) | 2017-03-23 | 2018-10-11 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
CN107546230B (zh) * | 2017-08-31 | 2020-10-23 | 长江存储科技有限责任公司 | 一种3d nand器件栅线缝隙氧化物的沉积的方法 |
JP2019050330A (ja) | 2017-09-12 | 2019-03-28 | 東芝メモリ株式会社 | 半導体装置 |
CN107799531B (zh) * | 2017-11-16 | 2018-12-14 | 长江存储科技有限责任公司 | 一种3d nand存储器等级层堆栈制造方法 |
CN110277389B (zh) * | 2018-03-14 | 2021-10-08 | 联华电子股份有限公司 | 具有导电线的半导体结构以及停止层的制作方法 |
JP2019161162A (ja) * | 2018-03-16 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
JP2019201074A (ja) * | 2018-05-15 | 2019-11-21 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2020031113A (ja) | 2018-08-21 | 2020-02-27 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
JP2020043273A (ja) | 2018-09-13 | 2020-03-19 | キオクシア株式会社 | 半導体記憶装置 |
JP2020145233A (ja) * | 2019-03-04 | 2020-09-10 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP7189814B2 (ja) * | 2019-03-18 | 2022-12-14 | キオクシア株式会社 | 半導体記憶装置 |
TWI692018B (zh) * | 2019-04-22 | 2020-04-21 | 旺宏電子股份有限公司 | 半導體結構及其形成方法 |
JP2021034591A (ja) * | 2019-08-26 | 2021-03-01 | キオクシア株式会社 | 半導体装置およびその製造方法 |
KR20220098191A (ko) | 2019-11-08 | 2022-07-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 3d nand 게이트 스택 보강 |
JP2021136412A (ja) * | 2020-02-28 | 2021-09-13 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102201416A (zh) * | 2010-03-26 | 2011-09-28 | 三星电子株式会社 | 三维半导体装置及其制造方法 |
Family Cites Families (15)
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US6020024A (en) * | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
DE19901013A1 (de) * | 1999-01-13 | 2000-07-20 | Basf Ag | Verwendung von Heterogenkatalysatoren in Verfahren zur Herstellung von Polyamiden |
JP3696119B2 (ja) * | 2001-04-26 | 2005-09-14 | 株式会社日立製作所 | 半導体装置、及び半導体装置の製造方法 |
KR20100001547A (ko) * | 2008-06-27 | 2010-01-06 | 삼성전자주식회사 | 수직형 비휘발성 메모리 소자 및 이의 제조 방법 |
KR101487966B1 (ko) * | 2008-11-25 | 2015-02-03 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
JP2011165815A (ja) | 2010-02-08 | 2011-08-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8455940B2 (en) | 2010-05-24 | 2013-06-04 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device |
KR101778287B1 (ko) * | 2010-08-30 | 2017-09-14 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
KR20120047325A (ko) * | 2010-11-01 | 2012-05-11 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
JP2012227326A (ja) | 2011-04-19 | 2012-11-15 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
JP2013016746A (ja) * | 2011-07-06 | 2013-01-24 | Renesas Electronics Corp | 半導体装置、電子装置、配線基板、半導体装置の製造方法、及び配線基板の製造方法 |
JP5593283B2 (ja) | 2011-08-04 | 2014-09-17 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US9406689B2 (en) * | 2013-07-31 | 2016-08-02 | Qualcomm Incorporated | Logic finFET high-K/conductive gate embedded multiple time programmable flash memory |
KR102091729B1 (ko) * | 2013-10-10 | 2020-03-20 | 삼성전자 주식회사 | 3차원 반도체 메모리 소자의 제조 방법 및 그 방법에 의해 제조된 3차원 반도체 메모리 소자 |
JP2015149413A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
-
2016
- 2016-01-22 US US15/003,919 patent/US10109641B2/en active Active
- 2016-07-01 TW TW105120979A patent/TWI645458B/zh active
- 2016-07-20 CN CN201610576858.1A patent/CN106469735B/zh active Active
Patent Citations (1)
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CN102201416A (zh) * | 2010-03-26 | 2011-09-28 | 三星电子株式会社 | 三维半导体装置及其制造方法 |
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CN106469735A (zh) | 2017-03-01 |
TWI645458B (zh) | 2018-12-21 |
US20170047341A1 (en) | 2017-02-16 |
TW201709294A (zh) | 2017-03-01 |
US10109641B2 (en) | 2018-10-23 |
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