CN106460168B - 基座及其制造方法 - Google Patents

基座及其制造方法 Download PDF

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CN106460168B
CN106460168B CN201580032799.5A CN201580032799A CN106460168B CN 106460168 B CN106460168 B CN 106460168B CN 201580032799 A CN201580032799 A CN 201580032799A CN 106460168 B CN106460168 B CN 106460168B
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carbide layer
recess
forming
silicon carbide
tantalum
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CN106460168A (zh
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篠原正人
阿部纯久
野上晓
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Toyo Tanso Co Ltd
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Abstract

本发明提供一种在晶片上形成薄膜时，能够抑制杂质等附着于晶片的基座及其制造方法。该基座的特征在于，具备：具有凹部(11)的基材(10)、直接形成在凹部(11)的底面(11a)和侧面(11b)上的碳化钽层(22)、和形成在凹部(11)以外的基材(10)的表面上的碳化硅层(20)。

Description

基座及其制造方法
技术领域
本发明涉及基座及其制造方法。
背景技术
已知目前在半导体的制造工序等中，使用表层由碳化硅构成的基座。然而，在晶片上使碳化硅等外延生长的情况等时，晶片与基座被暴露在例如1500℃以上的高温下。因此，构成基座的表层的碳化硅存在附着在晶片上的问题。
为了解决这样的问题，在专利文献1中，提出了如下的基座：使用能够自由分离的由碳化钽而成的部件构成载置晶片的部分，使用能够自由分离的碳化硅包覆石墨材料构成载置晶片的部分的周边部。
现有技术文献
专利文献
专利文献1：日本特开2006－60195号公报
发明内容
发明所要解决的课题
然而，专利文献1中公开的基座由于由多个部件构成，所以制造工序复杂，还有不易操作使用的问题。
为了解决这些问题，可以考虑将基座的全部面使用碳化钽包覆。然而，如果将基座的全部面使用碳化钽包覆，则在晶片上沉积碳化硅膜等的时候，沉积在碳化钽层之上的碳化硅膜会剥离，有碳化硅的颗粒附着在晶片上的问题发生。另外，碳化钽层与作为基材的石墨等的材料之间有热膨胀系数(CTE)的差，存在使基座整体发生翘曲的问题。
本发明的目的在于提供在晶片上形成薄膜时，能够抑制杂质等附着于晶片的基座及其制造方法。
用于解决课题的方法
本发明的基座的特征在于具备：具有凹部的基材、直接形成在凹部的底面上的碳化钽层、和形成在凹部以外的基材的表面上的碳化硅层。
本发明中，可以在凹部的侧面上也直接形成有碳化钽层。
基材优选由碳材料形成，更优选由石墨形成。
本发明的第一方面的基座的制造方法，其特征在于，包括：准备没有形成凹部的原料基材的工序；在原料基材的表面上形成碳化硅层的工序；在原料基材形成凹部，并且将对应于凹部的区域的碳化硅层去除的工序；和在凹部的底面上形成碳化钽层的工序。
本发明的第二方面的基座的制造方法，其特征在于，包括：准备形成有凹部的基材的工序；在凹部以外的基材的表面上形成碳化硅层的工序；和在凹部的底面上形成碳化钽层的工序。
在本发明的第二方面中，形成碳化硅层的工序可以包括：在凹部内配置掩蔽部件的工序；在配置了掩蔽部件的基材的表面上形成碳化硅层的工序；和在形成碳化硅层后，将掩蔽部件从凹部去掉的工序。
在本发明的第一方面和第二方面的制造方法中，形成碳化钽层的工序可以包括：在凹部的底面上形成金属钽层的工序；和对金属钽层进行渗碳处理，形成碳化钽层的工序。
在本发明的第一方面和第二方面的制造方法中，形成碳化钽层的工序可以包括：以覆盖在凹部以外的基材的表面上的方式设置掩蔽夹具的工序；和在设置掩蔽夹具后，形成碳化钽层的工序。
在本发明的第一方面和第二方面的制造方法中，可以在凹部的底面上和侧面上同时形成碳化钽层。
在本发明的第一方面和第二方面的制造方法中，形成碳化钽层时，为了防止碳化钽层蔓延并形成在掩蔽夹具与基材之间，掩蔽夹具与基材之间优选配置膨胀石墨片材。
发明的效果
根据本发明，在晶片上形成薄膜时，能够抑制杂质等附着于晶片。
附图说明
图1是表示本发明的一个实施方式的基座的示意剖面图。
图2是表示本发明的第一方面的实施方式的制造工序的示意剖面图。
图3是表示本发明的第二方面的实施方式的制造工序的示意剖面图。
图4是表示本发明的实施方式中所使用的掩蔽夹具的示意剖面图。
图5是将掩蔽夹具的前端部放大表示的示意剖面图。
具体实施方式
以下，对于优选实施方式进行说明。但以下的实施方式仅为例示，本发明不受以下的实施方式所限定。另外，在各附图中，实质上具有相同功能的部件有时用相同符号参照。
图1是表示本发明的一个实施方式的基座的示意剖面图。基座1具备：具有凹部11的基材10、碳化钽层22和碳化硅层20。基座1例如能够在作为晶片的配置面的碳化钽层22之上配置晶片来制造半导体时使用。凹部11的底面11a和侧面11b之上，直接形成有碳化钽层22。本实施方式中，在凹部11的底面11a和侧面11b的双方上，形成有碳化钽层22，但在本发明中，至少在底面11a之上形成有碳化钽层22即可。在凹部11以外的基材10的表面上，形成有碳化硅层20。在本实施方式中，碳化硅层20直接形成在基材10的表面上。
基材10优选由碳材料形成，更优选由石墨形成。另外，基材10优选由与在其上形成的碳化硅层20具有相同程度的热膨胀系数(CTE)的材料形成。从这些观点出发，基材10优选由热膨胀系数(CTE)为4～6.5/℃(350～450℃)的材料形成。从这样的观点出发，基材10也优选由石墨等碳材料形成。
碳化硅层20能够通过例如CVD法形成。碳化硅层20的厚度优选在50μm～300μm的范围内，进一步优选在80μm～160μm的范围内。
碳化钽层22能够通过例如在利用CVD法形成金属钽层后，对金属钽层进行渗碳处理而形成。这样的碳化钽层的形成例如在日本特开2011－153070号公报等中有记载。碳化钽层22的厚度没有特别限定，优选例如在10μm～30μm的范围内。
在本实施方式中，在用于载置晶片的凹部11内形成有碳化钽层22，晶片被载置在碳化钽层22之上。因此，在晶片的背面不会有碳化硅附着。另外，在凹部11以外的基材10的表面，形成有碳化硅层20。因此，使碳化硅在晶片之上外延生长时，即使在碳化硅层20之上有碳化硅沉积，沉积的碳化硅也不会剥离。所以，能够防止沉积的碳化硅成为颗粒而剥离并附着在晶片的表面。所以，在本实施方式中，在晶片上形成薄膜时，能够抑制杂质等附着于晶片。
另外，在本实施方式中，在凹部11的底面11a和侧面11b之上，直接形成有碳化钽层22。因此，能够使碳化钽层22对于基材10密合性良好地形成。可以考虑在包括凹部11内部的基材10的全部面之上形成碳化硅层20后，在凹部11内形成碳化钽层22。这种情况下，凹部11内的碳化钽层22形成在碳化硅层20之上。本实施方式那样在基材10之上直接形成碳化钽层22的情况，与在碳化硅层20之上形成碳化钽层22的情况相比，能够使碳化钽层22密合性良好地形成。而且在碳化硅层20之上形成碳化钽层22的话，由于碳化硅层20的厚度偏差或凹凸，难以得到高度的尺寸精度。在基材10之上直接形成碳化钽层22的情况下，由于成为仅在基材10之上加上仅为碳化钽层22的覆膜厚度，所以能够提高凹部11的尺寸精度。在凹部11载置晶片的情况下，凹部11大多被要求具有高的尺寸精度，作为基座使用时成为巨大优点。
另外，在本实施方式中，由于在凹部11以外的基材10的表面形成有与基材10的热膨胀系数相近的碳化硅层20，所以能够防止基座1发生翘曲。
如图1所示的实施方式的基座1能够通过例如以下说明的第一方面和第二方面的制造方法制造。
图2是表示本发明的第一方面的实施方式的制造工序的示意剖面图。
准备如图2(a)所示的没有形成凹部11的原料基材10a。之后，如图2(b)所示，在原料基材10a的表面形成碳化硅层20。在本实施方式中，在原料基材10a的全部面上形成碳化硅层20。碳化硅层20通过CVD法形成。
如图2(c)所示，接着，在形成了碳化硅层20的原料基材10a形成凹部11。凹部11通过例如切削加工形成。在形成凹部11时，对应于凹部11的区域的碳化硅层20也被去除。
形成凹部11后，优选对碳化硅层20以及从凹部11露出的基材10进行纯化处理。例如，能够使用氯气和氢气，或三氟化氯气等进行加热处理来进行纯化处理。优选通过纯化处理，使从凹部11露出的基材10的灰分在20ppm以下。
如图2(d)所示，接着，在凹部11的底面11a和侧面11b之上形成金属钽层21。金属钽层21通过例如CVD法形成。
图4是表示在实施方式中使用的掩蔽夹具的示意剖面图。图5是将掩蔽夹具的前端部扩大表示的示意剖面图。在形成金属钽层21时，将图4所示的掩蔽夹具13以覆盖形成有碳化硅层20的区域的方式配置。如图4和图5所示，在凹部11的周边部，在掩蔽夹具13与基材10之间，夹有膨胀石墨片材14。通过在掩蔽夹具13与基材10之间夹着膨胀石墨片材14，能够防止金属钽层21蔓延并形成在掩蔽夹具13与基材10之间。膨胀石墨片材14的厚度优选为0.1～1.0mm左右。
如图4和图5所示，掩蔽夹具13的前端部13a以向凹部11的底面延伸的方式形成。由此，防止膨胀石墨片材14的位置错位。
但是在形成金属钽层21时，若想要过度抑制蔓延，则有时会产生在凹部11处的碳化钽层的厚度不足的担忧。在形成充分厚度的碳化钽层的情况下，即使碳化钽层略微蔓延溢出而形成在碳化硅层20的基座上表面，也不会发生明显的不良情况。向碳化硅层20的基座上表面的碳化钽层的溢出优选控制在5mm以下，更优选在3mm以下。
如以上方式，如图2(d)所示，金属钽层21在凹部11的底面11a和侧面11b上直接形成。
之后，通过对形成在凹部11内的金属钽层21进行渗碳处理，形成碳化钽层22。渗碳处理能够通过例如日本特开2011－153070号公报等所记载的方法进行。
如以上方式，能够制造图1所示的实施方式的基座1。
图3是表示本发明的第二方面的实施方式的制造工序的示意剖面图。
首先，准备如图3(a)所示的形成有凹部11的基材10。凹部11能够通过例如切削加工等形成。
之后，如图3(b)所示，在基材10的凹部11配置掩蔽部件12。为了在加热时在掩蔽部件12与凹部11之间不形成间隙，掩蔽部件12优选使用与基材10的热膨胀系数相近的材料。在本实施方式中，使用与构成基材10的石墨相同的石墨形成掩蔽部件12。
之后，在基材10的表面形成碳化硅层20。碳化硅层20通过CVD法形成。虽然在掩蔽部件12之上也形成碳化硅层20，但在形成碳化硅层20后，通过将掩蔽部件12去掉，就成为图3(c)所示的状态。在该状态下，优选通过与第一方面同样地对碳化硅层20进行纯化处理。
之后，与第一方面同样地，如图3(d)所示，在凹部11的底面11a和侧面11b之上形成金属钽层21。
之后，与第一方面同样地，通过对形成在凹部11内的金属钽层21进行渗碳处理，形成碳化钽层22。
如以上方式，能够制造图1所示的实施方式的基座1。
另外，作为基材10选择具有与碳化硅层20近似的线膨胀系数的材质的情况下，例如在1800℃形成碳化钽层22后，冷却至室温时，有由于碳化硅与碳化钽的线膨胀系数差导致碳化钽层22产生细微的开裂的担忧。由于从该开裂会有基材10露出，与反应气体接触时会产生例如基材10的石墨被腐蚀的担忧，但在作为SiC外延生长用的基座使用的情况下，由于反应温度上升至1500℃～1700℃左右，一度变宽的开裂会由于碳化钽层22的膨胀，在反应时被闭塞，能够防止基材10被腐蚀。
适用这样的使用方法的情况下，不论基材10与碳化钽层22的线膨胀系数的关系，都能够选定对基材10适当的材质形成基座。
在该使用方法中，碳化钽层的形成温度与使用温度之差优选在300℃以下，更优选在200℃以下。
作为本发明的基座的制造方法，虽然以图2所示的第一方面和图3所示的第二方面的制造方法为例进行了说明，但本发明不限定于此。
另外，作为本发明的基座，虽然以图1所示的实施方式的基座为例进行了说明，但本发明不限定于此。
符号说明
1…基座
10…基材
10a…原料基材
11…凹部
11a…底面
11b…侧面
12…掩蔽部件
13…掩蔽夹具
13a…前端部
14…膨胀石墨片材
20…碳化硅层
21…金属钽层
22…碳化钽层

Claims (10)

1.一种基座，其特征在于，仅具备：
具有凹部的基材、
直接形成在所述凹部的底面上和所述凹部的侧面上的碳化钽层、和
直接形成在所述凹部以外的所述基材的表面上的碳化硅层。
2.如权利要求1所述的基座，其特征在于：
所述基材由碳材料形成。
3.如权利要求2所述的基座，其特征在于：
所述基材由石墨形成。
4.一种基座的制造方法，其用于制造权利要求1～3中任一项所述的基座，该制造方法的特征在于，包括：
准备没有形成所述凹部的原料基材的工序；
在所述原料基材的表面上形成所述碳化硅层的工序；
在所述原料基材形成所述凹部，并且将对应于所述凹部的区域的所述碳化硅层去除的工序；和
在所述凹部的底面上形成碳化钽层的工序。
5.一种基座的制造方法，其用于制造权利要求1～3中任一项所述的基座，该制造方法的特征在于，包括：
准备形成有所述凹部的基材的工序；
在所述凹部以外的所述基材的表面上形成碳化硅层的工序；和
在所述凹部的底面上形成碳化钽层的工序。
6.如权利要求5所述的基座的制造方法，其特征在于：
形成所述碳化硅层的工序包括：
在所述凹部内配置掩蔽部件的工序；
在配置了所述掩蔽部件的所述基材的表面上形成碳化硅层的工序；和
形成所述碳化硅层后，将所述掩蔽部件从所述凹部去掉的工序。
7.如权利要求4～6中任一项所述的基座的制造方法，其特征在于：
形成所述碳化钽层的工序包括：
在所述凹部的底面上形成金属钽层的工序；和
对所述金属钽层进行渗碳处理，形成所述碳化钽层的工序。
8.如权利要求4～6中任一项所述的基座的制造方法，其特征在于：
形成所述碳化钽层的工序包括：
以覆盖在所述凹部以外的所述基材的表面上的方式设置掩蔽夹具的工序；和
设置所述掩蔽夹具后，形成所述碳化钽层的工序。
9.如权利要求8所述的基座的制造方法，其特征在于：
在形成所述碳化钽层的工序中，在所述掩蔽夹具与所述基材之间配置膨胀石墨片材。
10.如权利要求4～6中任一项所述的基座的制造方法，其特征在于：
在形成所述碳化钽层的工序中，在所述凹部的底面上和侧面上同时形成碳化钽层。
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