JP6196246B2 - 炭化ケイ素−炭化タンタル複合材及びサセプタ - Google Patents
炭化ケイ素−炭化タンタル複合材及びサセプタ Download PDFInfo
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Description
図1は、本実施形態に係る炭化ケイ素−炭化タンタル複合材を示す略図的断面図である。図1を参照しながら、本実施形態に係る炭化ケイ素−炭化タンタル複合材1の構成について説明する。
炭化ケイ素−炭化タンタル複合材1は、例えば、以下のようにして製造することができる。まず、黒鉛基材11を準備する。次に、黒鉛基材11の表面11a上に、熱CVDなどの方法によって、第1の炭化ケイ素層12を形成する。次に、第1の炭化ケイ素層12の表面の少なくとも一部を、H2ガス、Cl2ガスなどを用いたエッチング処理を行ったり、熱炭化処理を行ったりすることにより、X線光電子分光法によって測定されるC/Si組成比が1.2以上の第2の炭化ケイ素層13、またはラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dが、1.0以上の第2の炭化ケイ素層13を形成する。次に、第2の炭化ケイ素層13の表面13aの上に、化学蒸着(CVD)法などによって、タンタル層を形成する。その後、タンタル層に浸炭処理を施すことにより、炭化タンタル層20を形成する。以上のような方法により、炭化ケイ素−炭化タンタル複合材1を製造することができる。なお、浸炭処理は、例えば、特開2010−280948号公報に記載された方法などの公知の方法により行うことができる。
以下のようにして炭化ケイ素−炭化タンタル複合材1と実質的に同様の構成を有する炭化ケイ素−炭化タンタル複合材を作製した。
キャリアガス:アルゴン
温度:1000℃
圧力:200Pa
第1の炭化ケイ素層12のエッチング処理において、H2ガスの代わりにCl2ガスを用いたCl2エッチング処理を行ったこと以外は、実施例1と同様にして、炭化ケイ素−炭化タンタル複合材を作製した。エッチング処理後において、第2の炭化ケイ素層13のX線光電子分光法によって測定したC/Si組成比は、1.36であった。また、第2の炭化ケイ素層13のラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dは、4.03であった。第2の炭化ケイ素層13の結晶子径は、663.9Åであった。結果を表1に示す。実施例2で得られた炭化ケイ素−炭化タンタル複合材の炭化タンタル層20の表面写真を図3に示す。図3から明らかなとおり、炭化タンタル層20の表面には、クラックや剥離などが観察されなかった。
Cl2ガスの流通時間を2時間とした以外は、実施例2と同様にして、炭化ケイ素−炭化タンタル複合材を作製した。熱炭化処理後において、第2の炭化ケイ素層13のX線光電子分光法によって測定したC/Si組成比は、2.12であった。第2の炭化ケイ素層13の結晶子径は、739.6Åであった。また、第2の炭化ケイ素層13のラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dは、5.88であった。結果を表1に示す。実施例3で得られた炭化ケイ素−炭化タンタル複合材の炭化タンタル層20の表面写真を図4に示す。図4から炭化タンタル層20の表面には、僅かにクラックが観察されるものの、実用上問題とならない程度であった。
第1の炭化ケイ素層12をエッチング処理する代わりに、熱炭化処理したこと以外は、実施例1と同様にして、炭化ケイ素−炭化タンタル複合材を作製した。熱炭化処理は、次のようにして行った。炭化ケイ素−炭化タンタル複合材を、10−4Pa以下の減圧下に置き、約1800℃で0.5時間加熱することにより、炭化ケイ素−炭化タンタル複合材の凹部に形成された第1の炭化ケイ素層12からSiの一部を昇華させて、第2の炭化ケイ素層13を形成した。熱炭化処理後において、第2の炭化ケイ素層13のX線光電子分光法によって測定したC/Si組成比は、5.39であった。また、第2の炭化ケイ素層13のラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dは、7.20であった。第2の炭化ケイ素層13の結晶子径は、751.3Åであった。結果を表1に示す。実施例4で得られた炭化ケイ素−炭化タンタル複合材の炭化タンタル層20の表面写真を図5に示す。図5から炭化タンタル層20の表面には、僅かにクラックが観察されるものの、実用上問題とならない程度であった。
第1の炭化ケイ素層12のエッチング処理を行わなかったこと以外は、実施例1と同様にして、炭化ケイ素−炭化タンタル複合材を得た。なお、第1の炭化ケイ素層のX線光電子分光法によって測定したC/Si組成比は、1.1であった。また、第1の炭化ケイ素層のラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dは、0であった。第2の炭化ケイ素層の結晶子径は、757.7Åであった。参考例1で得られた炭化ケイ素−炭化タンタル複合材の炭化タンタル層の表面写真を図6に示す。図6から明らかなとおり、炭化タンタル層の表面には、クラック及び剥離が観察された。
10…本体
11…黒鉛基材
11a…黒鉛基材の表面
12…第1の炭化ケイ素層
12a…第1の炭化ケイ素層の表面
13…第2の炭化ケイ素層
13a…第2の炭化ケイ素層の表面
20…炭化タンタル層
20a…炭化タンタル層の表面
21…サセプタ
31…基材
31a…基材の凹部
31a1…基材の凹部の底面
31a2…基材の凹部の側面
32…炭化ケイ素層
32a…炭化ケイ素層の表面
40…炭化タンタル層
40a…炭化タンタル層の表面
Claims (14)
- 表層の少なくとも一部が第1の炭化ケイ素層により構成された本体と、
前記第1の炭化ケイ素層の上に配された炭化タンタル層と、
前記炭化タンタル層と前記第1の炭化ケイ素層との間に配された第2の炭化ケイ素層と、を備え、
前記第2の炭化ケイ素層は、X線光電子分光法によって測定されるC/Si組成比が1.2以上であることを特徴とする炭化ケイ素−炭化タンタル複合材。 - 前記第2の炭化ケイ素層のX線光電子分光法によって測定されるC/Si組成比が、6.0以下である、請求項1に記載の炭化ケイ素−炭化タンタル複合材。
- 表層の少なくとも一部が第1の炭化ケイ素層により構成された本体と、
前記第1の炭化ケイ素層の上に配された炭化タンタル層と、
前記炭化タンタル層と前記第1の炭化ケイ素層との間に配された第2の炭化ケイ素層と、を備え、
前記第2の炭化ケイ素層は、ラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dが、1.0以上であることを特徴とする炭化ケイ素−炭化タンタル複合材。 - 前記第2の炭化ケイ素層のラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dが、7.5以下である、請求項3に記載の炭化ケイ素−炭化タンタル複合材。
- 前記第2の炭化ケイ素層の結晶子径は、753Å以下である、請求項1〜4のいずれか1項に記載の炭化ケイ素−炭化タンタル複合材。
- 前記本体は、黒鉛基材と、前記黒鉛基材の上に配された前記第1の炭化ケイ素層とを備える、請求項1〜5のいずれか1項に記載の炭化ケイ素−炭化タンタル複合材。
- 前記第2の炭化ケイ素層の厚みが、0.05μm以上である、請求項1〜6のいずれか1項に記載の炭化ケイ素−炭化タンタル複合材。
- 請求項1〜7のいずれか一項に記載の炭化ケイ素−炭素複合材を備え、
底面及び側面の少なくとも一方が前記炭化タンタル層により構成された凹部を有する、
サセプタ。 - ウェハを載置するための凹部を有する基材と、
前記凹部の底面上に配された炭化タンタル層と、
を備えたサセプタであって、
前記炭化タンタル層と前記基材との間に配された炭化ケイ素層をさらに備え、
前記凹部の底面上における前記炭化タンタル層の厚みが、10μm以下であることを特徴とする、サセプタ。 - ウェハを載置するための凹部を有する基材と、
前記凹部の底面及び側面の上にのみ配された炭化タンタル層と、
を備えたサセプタであって、
前記炭化タンタル層と前記基材との間に配された炭化ケイ素層をさらに備えることを特徴とする、サセプタ。 - 前記凹部の底面上において、前記炭化ケイ素層が、前記炭化タンタル層よりも厚い、請求項9または10に記載のサセプタ。
- 前記凹部の底面上における前記炭化ケイ素層の厚みが、60μm以上である、請求項9〜11のいずれか1項に記載のサセプタ。
- 前記凹部の底面上における前記炭化タンタル層の厚みが、10μm以下である、請求項10〜12のいずれか1項に記載のサセプタ。
- 前記基材が、黒鉛により構成されている、請求項9〜13のいずれか1項に記載のサセプタ。
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