TWI697576B - 基座及其製造方法 - Google Patents

基座及其製造方法 Download PDF

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TWI697576B
TWI697576B TW104118935A TW104118935A TWI697576B TW I697576 B TWI697576 B TW I697576B TW 104118935 A TW104118935 A TW 104118935A TW 104118935 A TW104118935 A TW 104118935A TW I697576 B TWI697576 B TW I697576B
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carbide layer
recess
forming
substrate
base
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篠原正人
阿部純久
野上暁
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日商東洋炭素股份有限公司
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Abstract

提供在晶圓上形成薄膜時，可抑制雜質等附著在晶圓的基座及其製造方法。
其特徵為：具備有：具有凹部(11)的基材(10)；直接形成在凹部(11)的底面(11a)及側面(11b)上的碳化鉭層(22)；及形成在凹部(11)以外的基材(10)的表面上的碳化矽層(20)。

Description

基座及其製造方法
本發明係關於基座及其製造方法。
以往在半導體之製造工程等中，已知使用一種表層藉由碳化矽所構成的基座。但是，在使碳化矽等磊晶成長在晶圓上的情形等之下，晶圓及基座被曝露在例如1500℃以上的高溫下。因此，有構成基座的表層的碳化矽會附著在晶圓的問題。
為解決如上所示之問題，在專利文獻1中係提出一種基座，其係以由分離自如之碳化鉭所成之構件構成載置晶圓的部分，且由分離自如之碳化矽被覆石墨材構成載置晶圓的部分的周邊部。
〔先前技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特開2006-60195號公報
但是，專利文獻1所揭示之基座由於由複數構件構成，因此會有製造工程複雜、且處理不易的問題。
為解決該等問題，考慮以碳化鉭被覆基座的全面。但是，若以碳化鉭被覆基座的全面，當使碳化矽膜等堆積在晶圓上時，會產生堆積在碳化鉭層之上的碳化矽膜剝離，且碳化矽的微粒附著在晶圓上的問題。此外，在碳化鉭層及作為基材的石墨等材料，由於在熱膨脹係數(CTE)有差異，因此會有在基座全體產生翹曲的問題。
本發明之目的在提供在晶圓上形成薄膜時，可抑制雜質等附著在晶圓的基座及其製造方法。
本發明之基座之特徵為：具備有：具有凹部的基材；直接形成在凹部的底面上的碳化鉭層；及形成在凹部以外的基材的表面上的碳化矽層。
在本發明中，亦可在凹部的側面上亦直接形成有碳化鉭層。
基材以由碳材料所形成為佳，以由石墨所形成為更佳。
本發明之第1態樣的基座之製造方法之特徵為：具備有：準備未形成有凹部的原基材的工程；在原基材的表面上形成碳化矽層的工程；在原基材形成凹部，並 且將與凹部相對應的區域的碳化矽層去除的工程；及在凹部的底面上形成碳化鉭層的工程。
本發明之第2態樣的基座之製造方法之特徵 為：具備有：準備形成有凹部的基材的工程；在凹部以外的基材的表面上形成碳化矽層的工程；及在凹部的底面上形成碳化鉭層的工程。
在本發明之第2態樣中，形成碳化矽層的工 程亦可包含：在凹部內配置遮蔽構件的工程；在配置有遮蔽構件的基材的表面上形成碳化矽層的工程；及在形成碳化矽層之後，將遮蔽構件由凹部去除的工程。
在本發明之第1態樣及第2態樣之製造方法 中，形成碳化鉭層的工程亦可包含：在凹部的底面上形成金屬鉭層的工程；及將金屬鉭層進行滲碳處理而形成碳化鉭層的工程。
在本發明之第1態樣及第2態樣之製造方法 中，形成碳化鉭層的工程亦可包含：以覆蓋凹部以外的基材的表面上的方式設置遮蔽治具的工程；及在設置遮蔽治具之後，形成碳化鉭層的工程。
在本發明之第1態樣及第2態樣之製造方法中，亦可在凹部的底面上與側面上同時形成碳化鉭層。
在本發明之第1態樣及第2態樣之製造方法中，為防止在形成碳化鉭層時，碳化鉭層繞入至遮蔽治具與基材之間而形成，以在遮蔽治具與基材之間配置膨脹石墨薄片為佳。
藉由本發明，在晶圓上形成薄膜時，可抑制雜質等附著在晶圓。
1‧‧‧基座
10‧‧‧基材
10a‧‧‧原基材
11‧‧‧凹部
11a‧‧‧底面
11b‧‧‧側面
12‧‧‧遮蔽構件
13‧‧‧遮蔽治具
13a‧‧‧前端部
14‧‧‧膨脹石墨薄片
20‧‧‧碳化矽層
21‧‧‧金屬鉭層
22‧‧‧碳化鉭層
圖1係顯示本發明之一實施形態的基座的模式剖面圖。
圖2係顯示本發明之第1態樣之實施形態之製造工程的模式剖面圖。
圖3係顯示本發明之第2態樣之實施形態之製造工程的模式剖面圖。
圖4係顯示在本發明之實施形態中所使用的遮蔽治具的模式剖面圖。
圖5係放大顯示遮蔽治具之前端部的模式剖面圖。
以下說明較佳之實施形態。但是，以下之實施形態僅為例示，本發明並非為限定於以下實施形態者。此外，在各圖示中，實質上具有相同功能的構件係有以相同符號進行參照的情形。
圖1係顯示本發明之一實施形態的基座的模式剖面圖。基座1係具備有：具有凹部11的基材10、碳 化鉭層22、及碳化矽層20。基座1係被使用在例如在晶圓的配置面亦即碳化鉭層22之上配置晶圓來製造半導體之時。在凹部11的底面11a及側面11b之上係直接形成有碳化鉭層22。在本實施形態中，在凹部11的底面11a及側面11b之雙方之上形成有碳化鉭層22，但是在本發明中，若至少在底面11a之上形成有碳化鉭層22即可。 在凹部11以外的基材10的表面上係形成有碳化矽層20。在本實施形態中，碳化矽層20係直接形成在基材10的表面上。
基材10係以由碳材料形成為佳，以由石墨形 成為更佳。此外，基材10係以由具有與形成在其上的碳化矽層20為相同程度的熱膨脹係數(CTE)的材料形成為佳。由該等觀點來看，基材10係以由熱膨脹係數(CTE)為4~6.5/℃(350~450℃)的材料形成為佳。 由如上所示之觀點來看亦以基材10由石墨等碳材料形成為佳。
碳化矽層20係可藉由例如CVD法所形成。 碳化矽層20的厚度係以50μm~300μm的範圍內為佳，更佳為80μm~160μm的範圍內。
碳化鉭層22係可在藉由例如CVD法形成金 屬鉭層之後，藉由將金屬鉭層進行滲碳處理而形成。如上所示之碳化鉭層的形成係記載於例如日本特開2011-153070號公報等。碳化鉭層22的厚度並未特別限定，惟以例如10μm~30μm的範圍內為佳。
在本實施形態中，在供載置晶圓的凹部11內形成有碳化鉭層22，晶圓係被載置在碳化鉭層22之上。因此，並不會有碳化矽附著在晶圓的背面的情形。此外，在凹部11以外的基材10的表面係形成有碳化矽層20。因此，當使碳化矽磊晶成長於晶圓之上時，即使碳化矽堆積在碳化矽層20之上，所堆積的碳化矽並不會剝離。因此，可防止所堆積的碳化矽形成為微粒而剝離而附著在晶圓的表面的情形。因此，在本實施形態中，在晶圓上形成薄膜時，可抑制雜質等附著在晶圓。
此外，在本實施形態中，在凹部11的底面11a及側面11b之上直接形成有碳化鉭層22。因此，可相對基材10密接性佳地形成碳化鉭層22。考慮包含凹部11內，在基材10的全面之上形成碳化矽層20之後，在凹部11內形成碳化鉭層22的情形。此時，凹部11內的碳化鉭層22係形成在碳化矽層20之上。如本實施形態般若在基材10之上直接形成碳化鉭層22，相較於在碳化矽層20之上形成碳化鉭層22的情形，可密接性佳地形成碳化鉭層22。此外，若在碳化矽層20之上形成碳化鉭層22，藉由碳化矽層20的厚度不均或凹凸，不易獲得高度的尺寸精度。若在基材10之上直接形成碳化鉭層22，在基材10之上係僅加上僅有碳化鉭層22的被膜厚度，因此可提高凹部11的尺寸精度。若在凹部11載置晶圓，凹部11係大多被要求高尺寸精度，在作為基座使用方面，成為較大的優勢。
此外，在本實施形態中，由於在凹部11以外的基材10的表面形成有熱膨脹係數與基材10接近的碳化矽層20，因此可防止在基座1發生翹曲。
圖1所示之實施形態的基座1係可藉由例如以下說明之第1態樣及第2態樣之製造方法來製造。
圖2係顯示本發明之第1態樣之實施形態之製造工程的模式剖面圖。
準備圖2(a)所示之未形成有凹部11的原基材10a。接著，如圖2(b)所示，在原基材10a的表面形成碳化矽層20。在本實施形態中，將碳化矽層20形成在原基材10a的全面。碳化矽層20係藉由CVD法所形成。
如圖2(c)所示，接著，在形成有碳化矽層20的原基材10a形成凹部11。凹部11係例如藉由切削加工所形成。當形成凹部11時，與凹部11相對應的區域的碳化矽層20亦被去除。
較佳為在形成凹部11之後，將碳化矽層20及由凹部11露出的基材10進行純化處理。例如，可使用氯氣與氫氣、或三氟化氯氣體等進行加熱處理，且進行純化處理。較佳為藉由純化處理，將由凹部11露出的基材10的灰分形成為20ppm以下。
如圖2(d)所示，接著，在凹部11的底面11a及側面11b之上形成金屬鉭層21。金屬鉭層21係藉由例如CVD法所形成。
圖4係顯示在實施形態中所使用之遮蔽治具 的模式剖面圖。圖5係放大顯示遮蔽治具的前端部的模式剖面圖。形成金屬鉭層21時，以覆蓋形成有碳化矽層20的區域的方式配置圖4所示之遮蔽治具13。如圖4及圖5所示，在凹部11的周邊部，膨脹石墨薄片14被夾在遮蔽治具13與基材10之間。藉由將膨脹石墨薄片14夾在遮蔽治具13與基材10之間，可防止金屬鉭層21繞入至遮蔽治具13與基材10之間而形成。膨脹石墨薄片14的厚度係以0.1~1.0mm左右為佳。
如圖4及圖5所示，遮蔽治具13的前端部 13a係以朝向凹部11的底面延伸的方式形成。藉此，防止膨脹石墨薄片14的位置偏移。
但是，在形成金屬鉭層21時，若欲過於抑制 繞入，會有產生凹部11中的碳化鉭層的厚度不足之虞的情形。在形成充分厚度的碳化鉭層的情形下，即使碳化鉭層稍微繞入至碳化矽層20的基座上面而突出形成，亦不會產生明顯的不良情形。碳化矽層20之對基座上面的碳化鉭層的突出係以停在5mm以下為佳，更佳為3mm以下。
如以上所示，如圖2(d)所示，將金屬鉭層 21直接形成在凹部11的底面11a及側面11b之上。
接著，將形成在凹部11內的金屬鉭層21進 行滲碳處理，藉此形成碳化鉭層22。滲碳處理係可藉由例如日本特開2011-153070號公報等所記載之方法進行。
如以上所示，可製造圖1所示之實施形態的 基座1。
圖3係顯示本發明之第2態樣之實施形態之製造工程的模式剖面圖。
首先，準備圖3(a)所示之形成有凹部11的基材10。凹部11係可藉由例如切削加工等來形成。
接著，如圖3(b)所示，在基材10的凹部11配置遮蔽構件12。遮蔽構件12係以使用熱膨脹係數與基材10接近者為佳，俾使被加熱時在與凹部11之間未形成有間隙。在本實施形態中，使用與構成基材10的石墨為相同的石墨來形成遮蔽構件12。
接著，在基材10的表面形成碳化矽層20。碳化矽層20係藉由CVD法所形成。在遮蔽構件12之上亦形成碳化矽層20，但是在形成碳化矽層20之後，藉由去除遮蔽構件12，形成為圖3(c)所示之狀態。在該狀態下，與第1態樣同樣地，以將碳化矽層20進行純化處理為佳。
接著，與第1態樣同樣地，如圖3(d)所示，在凹部11的底面11a及側面11b之上形成金屬鉭層21。
接著，與第1態樣同樣地，將形成在凹部11內的金屬鉭層21進行滲碳處理，藉此形成碳化鉭層22。
如以上所示，可製造圖1所示之實施形態的基座1。
此外，若選擇與碳化矽層20近似的線膨脹係 數的材質作為基材10，在例如以1800℃形成碳化鉭層22之後，若被冷卻至室溫，會有因碳化矽與碳化鉭的線膨脹係數差而在碳化鉭層22產生微細裂痕之虞。由於基材10由該裂痕露出，因此若與反應氣體相接觸，會產生例如基材10的石墨被腐蝕之虞，但是若作為SiC磊晶成長用的基座來使用時，反應溫度由於上升至1500℃~1700℃左右，因此暫時擴展的裂痕因碳化鉭層22膨脹而在反應時被閉塞，可防止基材10被腐蝕。
若適用如上所示之使用方法，無關於基材10 與碳化鉭層22的線膨脹係數的關係，可選定適於基材10的材質來形成基座。
在該使用方法中，碳化鉭層的形成溫度與使用溫度的差係以300℃以下為佳，更佳為200℃以下。
以本發明之基座之製造方法而言，以圖2所示之第1態樣及圖3所示之第2態樣之製造方法為例進行說明，惟本發明並非限定於該等。
此外，以本發明之基座而言，以圖1所示之實施形態的基座為例進行說明，惟本發明並非限定於此。
1‧‧‧基座
10‧‧‧基材
11‧‧‧凹部
11a‧‧‧底面
11b‧‧‧側面
20‧‧‧碳化矽層
22‧‧‧碳化鉭層

Claims (11)

  1. 一種基座，其係具備有：具有凹部的基材；直接形成在前述凹部的底面上的碳化鉭層；及直接形成在前述凹部以外的前述基材的表面上的碳化矽層。
  2. 如申請專利範圍第1項之基座，其中，在前述凹部的側面上亦直接形成有碳化鉭層。
  3. 如申請專利範圍第1項或第2項之基座，其中，前述基材由碳材料所形成。
  4. 如申請專利範圍第3項之基座，其中，前述基材由石墨所形成。
  5. 一種基座之製造方法，其係製造如申請專利範圍第1項至第4項中任一項之基座的方法，其係具備有：準備未形成有前述凹部的原基材的工程；在前述原基材的表面上形成前述碳化矽層的工程；在前述原基材形成前述凹部，並且將與前述凹部相對應的區域的前述碳化矽層去除的工程；及在前述凹部的底面上形成碳化鉭層的工程。
  6. 一種基座之製造方法，其係製造如申請專利範圍第1項至第4項中任一項之基座的方法，其係具備有：準備形成有前述凹部的基材的工程；在前述凹部以外的前述基材的表面上形成碳化矽層的工程；及 在前述凹部的底面上形成碳化鉭層的工程。
  7. 如申請專利範圍第6項之基座之製造方法，其中，形成前述碳化矽層的工程包含：在前述凹部內配置遮蔽構件的工程；在配置有前述遮蔽構件的前述基材的表面上形成碳化矽層的工程；及在形成前述碳化矽層之後，將前述遮蔽構件由前述凹部去除的工程。
  8. 如申請專利範圍第5項至第7項中任一項之基座之製造方法，其中，形成前述碳化鉭層的工程包含：在前述凹部的底面上形成金屬鉭層的工程；及將前述金屬鉭層進行滲碳處理而形成前述碳化鉭層的工程。
  9. 如申請專利範圍第5項至第7項中任一項之基座之製造方法，其中，形成前述碳化鉭層的工程包含：以覆蓋前述凹部以外的前述基材的表面上的方式設置遮蔽治具的工程；及在設置前述遮蔽治具之後，形成前述碳化鉭層的工程。
  10. 如申請專利範圍第9項之基座之製造方法，其中，在形成前述碳化鉭層的工程中，在前述遮蔽治具與前述基材之間配置膨脹石墨薄片。
  11. 如申請專利範圍第5項至第7項中任一項之基座之製造方法，其中，在形成前述碳化鉭層的工程中，在前 述凹部之底面上、及側面上同時形成碳化鉭層。
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