CN106409957B - 一种大面积超薄石墨烯/二硫化钼超晶格异质材料 - Google Patents
一种大面积超薄石墨烯/二硫化钼超晶格异质材料 Download PDFInfo
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- CN106409957B CN106409957B CN201611018756.4A CN201611018756A CN106409957B CN 106409957 B CN106409957 B CN 106409957B CN 201611018756 A CN201611018756 A CN 201611018756A CN 106409957 B CN106409957 B CN 106409957B
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 111
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 title claims abstract description 93
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 92
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 26
- 238000002360 preparation method Methods 0.000 claims description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000011888 foil Substances 0.000 claims description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
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- 239000000758 substrate Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
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- 239000000126 substance Substances 0.000 claims description 5
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- 206010034960 Photophobia Diseases 0.000 claims description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
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- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 2
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- 229910052961 molybdenite Inorganic materials 0.000 description 22
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- 238000001069 Raman spectroscopy Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
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CN201611018756.4A CN106409957B (zh) | 2016-11-21 | 2016-11-21 | 一种大面积超薄石墨烯/二硫化钼超晶格异质材料 |
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CN201611018756.4A CN106409957B (zh) | 2016-11-21 | 2016-11-21 | 一种大面积超薄石墨烯/二硫化钼超晶格异质材料 |
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CN109019569B (zh) * | 2017-06-08 | 2021-05-28 | 中国科学院金属研究所 | 高质量石墨烯/二维金属碳化物晶体垂直异质结构材料及其制备方法 |
CN107808767B (zh) * | 2017-10-10 | 2019-05-24 | 西安交通大学 | 一种基于液态浸泡法增强单层二硫化钼薄膜铁磁性的方法 |
KR102496483B1 (ko) | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | 아발란치 광검출기 및 이를 포함하는 이미지 센서 |
CN109824043B (zh) * | 2017-11-23 | 2022-01-14 | 中国科学院金属研究所 | 通过调控转移介质层柔性提高鼓泡转移石墨烯速度的方法 |
CN108176393A (zh) * | 2017-12-27 | 2018-06-19 | 肇庆市华师大光电产业研究院 | 一种有序、高密度Ag-Al2O3-MoS2纳米结构的制备方法 |
CN108899423B (zh) * | 2018-06-28 | 2022-06-21 | 上海电力学院 | 一种高效的二维超晶格异质结光伏器件及其制备 |
CN110444622A (zh) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池窗口层的制备方法 |
CN110592658A (zh) * | 2019-09-04 | 2019-12-20 | 复旦大学 | 通过晶格对称性匹配二维材料模板实现金属有机框架表面外延生长的制备方法 |
CN110729297B (zh) * | 2019-10-24 | 2022-04-15 | 北京科技大学 | 石墨炔和二硫化钼结合的非易失性多级光电存储器及制备 |
CN111025690B (zh) * | 2019-12-13 | 2022-12-23 | 国家纳米科学中心 | 一种用于全光调制的石墨烯等离激元器件及制备方法 |
CN111244222B (zh) * | 2020-01-20 | 2022-05-27 | 中国科学院半导体研究所 | 六方氮化硼紫外光探测器及制备方法 |
CN111235601B (zh) * | 2020-03-19 | 2021-04-20 | 国家纳米科学中心 | 一种复合薄膜、电催化析氢器件及其制备方法和应用 |
CN111485212B (zh) * | 2020-06-04 | 2022-02-22 | 兰州文理学院 | 一种亚10纳米级仿生结构二硫化钼-碳多层薄膜制备方法 |
CN111889112A (zh) * | 2020-08-04 | 2020-11-06 | 杭州紫芯光电有限公司 | 一种MoS2/Graphene二维材料异质结可见光催化剂的制备方法 |
CN112281137A (zh) * | 2020-09-15 | 2021-01-29 | 电子科技大学 | 一种调控石墨烯/二硫化钼异质结中二硫化钼层数的方法 |
CN112320788B (zh) * | 2020-09-28 | 2022-11-08 | 中国电子科技集团公司第十三研究所 | 一种大尺寸二维材料异质结构的制备方法 |
CN113097331A (zh) * | 2021-02-24 | 2021-07-09 | 重庆科技学院 | 基于石墨烯和量子点的红外探测器 |
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CN102344131B (zh) * | 2011-07-06 | 2013-03-20 | 中国科学院上海微***与信息技术研究所 | 一种在钼基衬底上制备石墨烯薄膜的方法 |
CN103579419B (zh) * | 2013-11-13 | 2017-01-04 | 苏州科技学院 | 一种石墨烯/MoS2/Si 异质结薄膜太阳能电池及其制备方法 |
CN104218114B (zh) * | 2014-08-28 | 2016-05-18 | 太原理工大学 | 一种二维异质结太阳能电池及其制备方法 |
CN105206807B (zh) * | 2015-09-07 | 2017-12-26 | 合肥工业大学 | 一种MoS2/C超晶格异质结纳米片自组装纳米管及其制备方法和应用 |
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2016
- 2016-11-21 CN CN201611018756.4A patent/CN106409957B/zh active Active
Non-Patent Citations (3)
Title |
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Electric Field and Strain Effect on Graphene-MoS2 Hybrid Structure: Ab Initio Calculations;Liu, XG et al.;《JOURNAL OF PHYSICAL CHEMISTRY LETTERS》;20150820;第6卷(第16期);3269-3275 * |
Electronic Structural Moire Pattern Effects on MoS2/MoSe2 2D Heterostructures;Kang, J et al.;《NANO LETTERS》;20131130;第3卷(第11期);5485-5490 * |
Structural and Electronic Properties of Superlattice Composed of Graphene and Monolayer MoS2;Li, XD et al.;《JOURNAL OF PHYSICAL CHEMISTRY C》;20130725;第117卷(第29期);15347-15353 * |
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Effective date of registration: 20240625 Address after: Room 103, North Building, Building 3, Zhonghe Science and Technology Innovation Industrial Park, Southwest Corner of Longquan Road and North Ring Road Intersection, Ludian Street, Dengfeng City, Zhengzhou City, Henan Province, 452470 Patentee after: China Hydrogen Corporation (Dengfeng City) Technology Equipment Co.,Ltd. Country or region after: China Address before: Room 1801, Cross border Trade Building, Intersection of Jinsui Avenue and Xin'er Street, Hongqi District, Xinxiang City, Henan Province, 453000 (west of 107) Patentee before: China Hydrogen Corporation (Henan) Energy Technology Co.,Ltd. Country or region before: China |