CN106449815A - 基于非晶硅薄膜的异质结太阳能电池器件的制备方法 - Google Patents
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Abstract
本发明公开了一种基于非晶硅薄膜的异质结太阳能电池器件的制备方法，通过等离子体化学气相沉积法在涂了均匀银浆并退火后的单晶硅表面上沉积两层分别为i型和p型的非晶硅薄膜，然后用磁控溅射的方法制备阳极导电电极层。本发明通过制造的非晶—晶体异质结来有效增强光生载流子的传输与收集，同时通过沉积i型非晶硅薄膜，作为此种异质结薄膜的缓冲薄层，以达到收集载流子、提高光学转换效率的目的。本发明的基于非晶硅薄膜的异质结太阳能电池器件，具有大面积、高效率、低价格、稳定性好的优点，可应用于用于发电的光伏器件上。
Description
技术领域
本发明涉及一种太阳能电池器件的制备方法，特别涉及一种非晶—晶体异质结太阳能电池器件的制备方法，应用于无机材料太阳能电池技术领域。
背景技术
受到高纯度的硅原料极度短缺的影响，发展新一代的非晶硅a-Si薄膜太阳电池在当今世界太阳能光伏产业中显得相当重要。非晶薄膜—晶态硅异质结结构是综合非晶硅和晶态硅太阳电池二者的优点的最佳设计。非晶硅薄膜异质结太阳能电池器件的基本结构不是pn结，而是pin结。重掺杂的p、n区在电池内部形成内建电势，以收集电荷。i区是光敏区，它对光子的吸收系数很高，对敏感谱域的光吸收殆尽。所以，p/i/n结构的a-Si电池的厚度取600nm左右，i层厚度约5nm，而作为死光吸收区的p、n层的厚度设计在300nm量级。但现有技术制备的p/i/n结构的a-Si电池的生产成本较高，对光电子的产生和收集能力不够理想，转化效率有待进一步提高，制备工艺较为复杂，不利于生产能力的提升。
发明内容
为了解决现有技术问题，本发明的目的在于克服已有技术存在的不足，提供一种基于非晶硅薄膜的异质结太阳能电池器件的制备方法，本发明制备的基于非晶硅薄膜的异质结太阳能电池器件具有大面积、高效率、低价格、稳定性好的优点，可应用于用于发电的光伏器件上。本发明生产工艺易于形成大规模生产能力，生产可全流程自动化。
为达到上述发明创造目的，本发明采用下述技术方案：
一种基于非晶硅薄膜的异质结太阳能电池器件的制备方法，包括如下步骤：
a. 阴极导电电极层的制备：在硅片表面或玻璃表面均匀涂覆一层电极材料浆，利用真空管式炉对该硅片进行退火，温度范围在800～1000℃，保温时间在10～20min，使电极材料浆层固化形成厚度为5～10 nm阴极导电电极层；制备阴极导电电极层的电极材料浆优选采用银浆；
b. 光学薄膜层非晶硅的制备：采用等离子体增强化学气相沉积法，按照氢气、硅烷和硼烷的比例范围在10:80:（1～3）的比例进行化学气相沉积工艺，控制射频功率范围为40～100W，温度范围为150～250℃，压强为0.4～0.8Torr，气体辉光气压范围为90Pa以下，依次制备n型、i型和p型此各层非晶硅，其具体工艺参数为：
① n型层非晶硅的制备：采用磷烷PH3与硅烷SiH4体积流量比为20%，制备的n型层非晶硅厚度为10～30 nm；
② i型层非晶硅制备：采用硅烷SiH4与氢气H2体积流量比为12.5%，制备的i型层非晶硅厚度为1～3nm；
③ p型层非晶硅的制备：采用硼烷B2H6与硅烷SiH4体积流量比为30%，制备的p型层非晶硅厚度为160～300nm；
c. 阳极导电电极层的制备：使用磁控溅射方法，在所述步骤b的第③步骤中制备的p型层非晶硅上继续制备阳极导电电极层，控制磁控溅射功率在60～100W，磁控溅射时间在40～80min，所制备的阳极导电电极层厚度为200～400nm，完成基于非晶硅薄膜层的p-i-n非晶—晶体异质结太阳能电池器件结构的制备。制备阳极导电电极层优选为掺铝氧化锌导电电极层。
本发明与现有技术相比较，具有如下显而易见的突出实质性特点和显著优点：
1. 本发明制备的以非晶硅薄膜为基础的异质结太阳电池，比起晶体硅太阳电池有诸多优势，首先成本低廉，a-Si可以沉积在普通玻璃或硅片上，通过100~300℃低温工艺，生产的耗电量小，能量回收时间短；其次本发明制备工艺易于形成大规模生产能力，生产可全流程自动化。尤其是构建了这种非晶薄膜—晶态硅异质结结构，该种结构电池能在＜250℃的较低温度下制造，不但节约了资源，且低温环境使非晶硅基薄膜掺杂、禁带宽度、厚度得以较精确的控制，以便优化器件特性；
2. 本发明制备的基于非晶硅薄膜的异质结太阳电池能有效增强光生载流子的传输与收集，提高非晶薄膜—晶态硅异质结太阳电池的性能，同时也大大提高了异质结太阳能电池的光稳定性，本发明制备的非晶薄膜—晶态硅异质结在制造大面积、高效率、低价格、稳定性好的半导体太阳能电池中具有巨大的潜力；
3. 本发明制备工艺成本低，生产的耗电量小，能量回收时间短；
4. 本发明制备的非晶薄膜—晶态硅异质结太阳电池的载流子迁移率高，对光电子的产生和收集能力加强，转换效率提高，电池性能增强。
附图说明
图1为本发明优选实施例基于非晶硅薄膜层的异质结太阳能电池器件结构示意图。
图2为本发明优选实施例制备的p型非晶硅薄膜层的拉曼（Raman）表征图谱。
图3为本发明优选实施例制备的p型非晶硅薄膜层的金相显微镜表面形貌表征图。
图4为本发明中不同功率制备非晶硅薄膜层的异质结太阳能电池电流-电压（I-V）曲线图谱电学性能表征图。
具体实施方式
本发明的优选实施例详述如下：
在本实施例中，参见图1～3，一种基于非晶硅薄膜的异质结太阳能电池器件的制备方法，包括如下步骤：
a. 阴极导电电极层的制备：在硅片表面均匀涂覆一层银浆，利用真空管式炉对该硅片进行退火，温度范围在900℃，保温时间在10min，使银浆层固化形成厚度为5～10 nm阴极导电电极层；
b. 光学薄膜层非晶硅的制备：采用等离子体增强化学气相沉积法，按照氢气、硅烷和硼烷的比例范围在10:80: 3的比例进行化学气相沉积工艺，控制射频功率范围为60W，温度范围为200℃，压强为0.6Torr，气体辉光气压范围为55Pa，依次制备n型、i型和p型此各层非晶硅，其具体工艺参数为：
① n型层非晶硅的制备：采用磷烷PH3与硅烷SiH4体积流量比为20%，制备的n型层非晶硅厚度为10～30nm；
② i型层非晶硅制备：采用硅烷SiH4与氢气H2体积流量比为12.5%，制备的i型层非晶硅厚度为2nm；
③ p型层非晶硅的制备：采用硼烷B2H6与硅烷SiH4体积流量比为30%，制备的p型层非晶硅厚度为300nm；
c. 阳极导电电极层的制备：使用磁控溅射方法制备掺铝氧化锌导电电极层，在所述步骤b的第③步骤中制备的p型层非晶硅上继续制备阳极导电电极层，控制磁控溅射功率在60W，磁控溅射时间在60min，所制备的阳极导电电极层厚度为300nm，完成基于非晶硅薄膜层的p-i-n非晶—晶体异质结太阳能电池器件结构的制备。
本实施例制备的器件结构如图1所示，先在晶体硅背面均匀涂覆一层银浆，并用真空管式炉退火，接着通过PECVD在晶体硅上沉积两层i型和p型非晶硅；接着用磁控溅射仪在非晶硅薄膜表面镀一层AZO导电玻璃层；这样，就得到非晶薄膜-晶态硅异质结太阳能电池。本实施例制得的基于非晶硅薄膜异质结太阳能电池器件完全适合于光电太阳能电池的光电转换效率的要求，可应用于用于发电的光伏器件上，降低加工成本，提高光电转换效率。本发明方法制备太阳能电池器件检测结果表明：
如图2中的 Raman图所示，通过Raman图谱表征光学薄膜层的晶化程度，p型非晶硅薄膜特征峰位在480cm-1左右；如图3所示，金相显微镜表征光学薄膜层的表面形貌，在金相显微镜图中，p型非晶硅表面平整均匀基本无孔洞。
如图4所示， I-V曲线表征太阳能电池器件的光电转换性能，非晶薄膜-晶态硅异质结太阳能电池光电转换效率0.37%。
上述实施例通过等离子体化学气相沉积法（PECVD）在涂了均匀银浆并退火后的单晶硅表面上沉积两层分别为i型和p型的非晶硅（a-Si）薄膜，然后用磁控溅射的方法在表面镀掺铝氧化锌（AZO）导电玻璃作为电极。通过制造非晶—晶体异质结，来有效增强光生载流子的传输与收集，同时通过沉积i型非晶硅薄膜，作为此种异质结薄膜的缓冲薄层，以达到收集载流子、提高光学转换效率的目的。本发明的基于非晶硅薄膜的异质结太阳能电池器件，具有大面积、高效率、低价格、稳定性好的优点，可应用于用于发电的光伏器件上。
上面结合附图对本发明实施例进行了说明，但本发明不限于上述实施例，还可以根据本发明的发明创造的目的做出多种变化，凡依据本发明技术方案的精神实质和原理下做的改变、修饰、替代、组合或简化，均应为等效的置换方式，只要符合本发明的发明目的，只要不背离本发明基于非晶硅薄膜的异质结太阳能电池器件的制备方法的技术原理和发明构思，都属于本发明的保护范围。
Claims (3)
1.一种基于非晶硅薄膜的异质结太阳能电池器件的制备方法，其特征在于，包括如下步骤：
a. 阴极导电电极层的制备：在硅片或玻璃表面均匀涂覆一层电极材料浆，利用真空管式炉对该硅片进行退火，温度范围在800～1000℃，保温时间在10～20min，使电极材料浆层固化形成厚度为5～10 nm阴极导电电极层；
b. 光学薄膜层非晶硅的制备：采用等离子体增强化学气相沉积法，按照氢气、硅烷和硼烷的比例范围在10:80:（1～3）的比例进行化学气相沉积工艺，控制射频功率范围为40～100W，温度范围为150～250℃，压强为0.4～0.8Torr，气体辉光气压范围为90Pa以下，依次制备n型、i型和p型此各层非晶硅，其具体工艺参数为：
① n型层非晶硅的制备：采用磷烷PH3与硅烷SiH4体积流量比为20%，制备的n型层非晶硅厚度为10～30nm；
② i型层非晶硅制备：采用硅烷SiH4与氢气H2体积流量比为12.5%，制备的i型层非晶硅厚度为1～3nm；
③ p型层非晶硅的制备：采用硼烷B2H6与硅烷SiH4体积流量比为30%，制备的p型层非晶硅厚度为160～300nm；
c. 阳极导电电极层的制备：使用磁控溅射方法，在所述步骤b的第③步骤中制备的p型层非晶硅上继续制备阳极导电电极层，控制磁控溅射功率在60～100W，磁控溅射时间在40～80min，所制备的阳极导电电极层厚度为200～400nm，完成基于非晶硅薄膜层的p-i-n非晶—晶体异质结太阳能电池器件结构的制备。
2.根据权利要求1所述基于非晶硅薄膜的异质结太阳能电池器件的制备方法，其特征在于：在所述步骤a中，制备阴极导电电极层的电极材料浆采用银浆。
3.根据权利要求1或2所述基于非晶硅薄膜的异质结太阳能电池器件的制备方法，其特征在于：在所述步骤c中，制备阳极导电电极层为掺铝氧化锌导电电极层。
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