CN106062945B - 磁存储器和制造磁存储器的方法 - Google Patents
磁存储器和制造磁存储器的方法 Download PDFInfo
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- CN106062945B CN106062945B CN201480076776.XA CN201480076776A CN106062945B CN 106062945 B CN106062945 B CN 106062945B CN 201480076776 A CN201480076776 A CN 201480076776A CN 106062945 B CN106062945 B CN 106062945B
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- metal layer
- metal
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- magnetoresistive element
- magnetosphere
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461951414P | 2014-03-11 | 2014-03-11 | |
US61/951,414 | 2014-03-11 | ||
PCT/JP2014/067300 WO2015136723A1 (en) | 2014-03-11 | 2014-06-24 | Magnetic memory and method of manufacturing magnetic memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106062945A CN106062945A (zh) | 2016-10-26 |
CN106062945B true CN106062945B (zh) | 2019-07-26 |
Family
ID=54071196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480076776.XA Active CN106062945B (zh) | 2014-03-11 | 2014-06-24 | 磁存储器和制造磁存储器的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9893121B2 (zh) |
CN (1) | CN106062945B (zh) |
TW (1) | TWI575788B (zh) |
WO (1) | WO2015136723A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6139444B2 (ja) * | 2014-03-18 | 2017-05-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ |
US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
KR102411080B1 (ko) * | 2015-09-02 | 2022-06-21 | 삼성전자주식회사 | 패턴 형성 방법 및 이를 이용한 자기 메모리 장치의 제조 방법 |
US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
US10490732B2 (en) | 2016-03-11 | 2019-11-26 | Toshiba Memory Corporation | Magnetic memory device with sidewall layer containing boron and manufacturing method thereof |
CN107623069B (zh) * | 2016-07-14 | 2020-10-09 | 上海磁宇信息科技有限公司 | 一种刻蚀磁性隧道结及其底电极的方法 |
TWI688131B (zh) | 2016-09-14 | 2020-03-11 | 日商東芝記憶體股份有限公司 | 半導體裝置 |
US10297746B2 (en) | 2017-04-05 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post treatment to reduce shunting devices for physical etching process |
KR102355296B1 (ko) * | 2017-08-08 | 2022-01-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치 |
DE102018108545B4 (de) * | 2017-11-30 | 2021-05-20 | Taiwan Semiconductor Manufacturing Co. Ltd. | Magnetischer direktzugriffsspeicher und herstellungsverfahren dafür |
JP2019160938A (ja) | 2018-03-09 | 2019-09-19 | 東芝メモリ株式会社 | 磁気記憶装置及びその製造方法 |
JP2019160920A (ja) | 2018-03-09 | 2019-09-19 | 東芝メモリ株式会社 | 半導体記憶装置およびその製造方法 |
JP2019161106A (ja) | 2018-03-15 | 2019-09-19 | 東芝メモリ株式会社 | 半導体記憶装置の製造方法 |
JP2020047732A (ja) * | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 磁気記憶装置 |
CN111009606B (zh) * | 2018-10-08 | 2023-06-02 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US20220077233A1 (en) * | 2019-01-16 | 2022-03-10 | Board Of Regents, The University Of Texas System | Scandium nitride magnetic tunnel junction device |
JP2020150217A (ja) | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 磁気記憶装置および磁気記憶装置の製造方法 |
JP2020167210A (ja) | 2019-03-28 | 2020-10-08 | キオクシア株式会社 | 記憶装置および記憶装置の製造方法 |
US11283005B2 (en) | 2019-09-30 | 2022-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer scheme and method for MRAM |
US11121308B2 (en) * | 2019-10-15 | 2021-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sidewall spacer structure for memory cell |
JP2022049499A (ja) | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 磁気記憶装置 |
CN115734700A (zh) * | 2021-08-30 | 2023-03-03 | 江苏鲁汶仪器股份有限公司 | 一种mram磁隧道侧壁沾污的控制方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101364569A (zh) * | 2007-08-07 | 2009-02-11 | 株式会社瑞萨科技 | 磁性存储器的制造方法及磁性存储器 |
JP2011249590A (ja) * | 2010-05-27 | 2011-12-08 | Fujitsu Ltd | 磁気トンネル接合素子を用いた磁気ランダムアクセスメモリおよびその製造方法 |
JP2013201343A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001196659A (ja) * | 2000-01-12 | 2001-07-19 | Tdk Corp | トンネル磁気抵抗効果素子、薄膜磁気ヘッド、メモリ素子ならびにこれらの製造方法 |
JP2003243630A (ja) | 2002-02-18 | 2003-08-29 | Sony Corp | 磁気メモリ装置およびその製造方法 |
JP2005079258A (ja) | 2003-08-29 | 2005-03-24 | Canon Inc | 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ |
JP2006261592A (ja) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | 磁気抵抗効果素子及びその製造方法 |
JP2009239121A (ja) * | 2008-03-27 | 2009-10-15 | Toshiba Corp | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
JP2012059805A (ja) | 2010-09-07 | 2012-03-22 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
KR20120058113A (ko) | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 자기 터널 접합 구조체의 제조 방법 및 이를 이용하는 자기 메모리 소자의 제조 방법 |
JP5601181B2 (ja) * | 2010-12-02 | 2014-10-08 | 富士通セミコンダクター株式会社 | 磁気抵抗効果素子及びその製造方法 |
JP2013008868A (ja) * | 2011-06-24 | 2013-01-10 | Toshiba Corp | 半導体記憶装置 |
JP5665707B2 (ja) * | 2011-09-21 | 2015-02-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法 |
JP5514256B2 (ja) * | 2012-05-18 | 2014-06-04 | 株式会社東芝 | 磁気記憶素子及びその製造方法 |
JP2013247198A (ja) | 2012-05-24 | 2013-12-09 | Toshiba Corp | 磁気抵抗素子及びその製造方法 |
-
2014
- 2014-06-24 WO PCT/JP2014/067300 patent/WO2015136723A1/en active Application Filing
- 2014-06-24 CN CN201480076776.XA patent/CN106062945B/zh active Active
- 2014-09-10 TW TW103131213A patent/TWI575788B/zh active
-
2016
- 2016-09-06 US US15/257,112 patent/US9893121B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101364569A (zh) * | 2007-08-07 | 2009-02-11 | 株式会社瑞萨科技 | 磁性存储器的制造方法及磁性存储器 |
JP2011249590A (ja) * | 2010-05-27 | 2011-12-08 | Fujitsu Ltd | 磁気トンネル接合素子を用いた磁気ランダムアクセスメモリおよびその製造方法 |
JP2013201343A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI575788B (zh) | 2017-03-21 |
US9893121B2 (en) | 2018-02-13 |
TW201535811A (zh) | 2015-09-16 |
US20160380028A1 (en) | 2016-12-29 |
CN106062945A (zh) | 2016-10-26 |
WO2015136723A1 (en) | 2015-09-17 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20170930 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Applicant after: SK Hynix Address before: Tokyo, Japan Applicant before: Toshiba Corp. Applicant before: SK Hynix |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Patentee after: SK Hynix Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Patentee before: SK Hynix Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Patentee after: SK Hynix Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Patentee before: SK Hynix |
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TR01 | Transfer of patent right | ||
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Effective date of registration: 20220124 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Patentee after: SK Hynix Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Patentee before: SK Hynix |