CN106024970B - The crystal silicon battery lithographic method and PERC battery acid polishing methods of hardware compatibility - Google Patents
The crystal silicon battery lithographic method and PERC battery acid polishing methods of hardware compatibility Download PDFInfo
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- CN106024970B CN106024970B CN201610338062.2A CN201610338062A CN106024970B CN 106024970 B CN106024970 B CN 106024970B CN 201610338062 A CN201610338062 A CN 201610338062A CN 106024970 B CN106024970 B CN 106024970B
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- 238000000034 method Methods 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 29
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 29
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000005498 polishing Methods 0.000 title claims abstract description 26
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 57
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 238000001802 infusion Methods 0.000 claims abstract description 11
- 241000084978 Rena Species 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000002253 acid Substances 0.000 abstract description 7
- 150000007513 acids Chemical class 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the manufacture method of polycrystalline and monocrystalline PERC solar cells, the crystal silicon battery lithographic method and PERC battery acid polishing methods of specifically a kind of hardware compatibility.Its crystal silicon battery lithographic method is：In crystal silicon apparatus for production line, material mixture ratio in RENA machine etching grooves is set, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:4.5~7；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 volume ratios are 1:3 ~ 5, etching groove opens moisture film protection；Wherein, the mass percent concentration of the nitric acid used is 70%, and the mass concentration ratio of hydrofluoric acid is 49%；Using high Reducing thickness method etching is etched, etching machine belt speed is 2.3 ~ 2.6m/min.The present invention can the brilliant rule apparatus for production line of compatible conventional, crystal silicon battery etching and the polishing of PERC battery acids can be completed under the conditions of not changing etching apparatus and not increasing polissoir.
Description
Technical field
The present invention relates to the manufacture method of polycrystalline and monocrystalline PERC solar cells, specifically a kind of crystal silicon of hardware compatibility
Battery lithographic method and PERC battery acid polishing methods.
Background technology
Solar energy power generating has great application prospect, and photovoltaic industry development trend drops this to put forward effect at present, and normal
Advise the efficiency of structure battery turns into the main flow of market research without larger room for promotion, efficient crystal silicon battery, current by investigating
Various p-type high-efficiency batteries existing in the market, raising electricity can be maximized on the basis of cost maintains an equal level by only carrying on the back passivating technique
The performance in pond.The technical products efficiency high, open that pressure is high, encapsulation loss is low, has the response of more preferable dim light, be to seize mainstream market
Strategic product.
PERC batteries back of the body passivating technique is to deposit one layer of Al in battery back surface2O3Film, mainly pass through Al2O3Film is rich in negative
The characteristic of electric charge realizes good passivation effect to back surface, overleaf carries out lbg on passivation stack film afterwards, is opening
Printed electrode on passivating film after groove, metal electrode is formed Ohmic contact with silicon by fluting so that photo-generated carrier
Effectively collected.PERC batteries carry on the back contribution of the passivating technique to electrical property and are mainly reflected in the big of open-circuit voltage and short circuit current
Amplitude is lifted, and the universal efficiency of monocrystalline PERC batteries can reach 20.6-20.9% in the industry at present.
PERC batteries can realize maximum compatible with current production line, the increase ALD atomic layers on the basis of conventional producing line
Depositing device and lbg equipment, at present PERC battery process production procedure are：The making herbs into wool of wet method alkali, low pressure diffusion, etching and
Polishing, ALD plating aluminium oxide films, the positive/negative silicon nitride plated films of PECVD, laser backside fluting, printing-sintering, testing, sorting, in routine
The processes such as polishing, ALD plating aluminium oxide films, PECVD back side coating films and backside laser fluting are added on crystal silicon battery Process ba- sis.
Wherein, polished backside technique is the polishing before plated film is carried out to silicon chip back side, and back surface is flat after polishing,
Reflection of the light in silicon chip back surface of long wave band in solar spectrum is added, increase transmitted light returns to secondary suction inside silicon chip
Receive, improve IQE, add output current；Silicon chip back surface specific surface area reduces polish simultaneously after, so as to reduce back light
The compound of carrier is given birth to, improves minority carrier life time, while improve passivation effect；Produced after polishing after silicon chip back surface field printing-sintering
Aluminium reunite be easier contacted with silicon, make the effective area of back surface field alloy-layer increase.
Row polishing mode commonly used in the trade has acid polishing to polish two kinds with alkali at present, and alkali glossing is complicated, and need to be in original
Having increases polissoir on the basis of producing line；Acid polishing need not increase equipment, be it is a kind of can in a manner of the polishing of volume production, but need pair
Etching apparatus is transformed and the improvement of technical recipe.
The content of the invention
The technical problem to be solved by the invention is to provide one kind can the brilliant rule apparatus for production line of compatible conventional, do not changing
Dynamic etching apparatus and do not increase the method that can complete crystal silicon battery etching and the polishing of PERC battery acids under the conditions of polissoir.
The present invention crystal silicon battery lithographic method be：In crystal silicon apparatus for production line, material in RENA machine etching grooves is set
Proportioning, etching groove just match somebody with somebody HF:HNO3 volume ratios are 1:4.5~7；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 volume ratios are 1:
3 ~ 5, etching groove opens moisture film protection；Wherein, the mass percent concentration of the nitric acid used is 70%, and the mass ratio of hydrofluoric acid is dense
Spend for 49%；Using high Reducing thickness method etching is etched, etching machine belt speed is 2.3 ~ 2.6m/min.This method etching duplicate removal is normal
Advise etching technics 4 ~ 5 times, due to there is moisture film protection, in the case of device hardware failsafe, silicon chip was not in quarter
Phenomenon.
Preferably, in crystal silicon battery lithographic method, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:5.5；It is every to circulate amount infused
100pcs fluid infusion HF:HNO3 volume ratios are 1:4；Etching machine belt speed is 2.5 m/min.
The present invention PERC battery acid polishing methods be：In crystal silicon apparatus for production line, material in RENA machine etching grooves is set
Material proportioning, etching groove just match somebody with somebody HF:HNO3 volume ratios are 1:4.5~7；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 volume ratios are
1:3 ~ 5, etching groove opens moisture film protection；Wherein, the mass percent concentration of the nitric acid used is 70%, the mass ratio of hydrofluoric acid
Concentration is 49%；Silicon chip passes through etching machine with 0.8 ~ 1.4 m/min belt speed after spreading, and completes polishing.Under this method, silicon chip
Between back side emitter rate can reach 30% ~ 38%, requirements of the PERC to polished backside technique can be met.
Preferably, in PERC battery acids polishing method, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:6；It is every to circulate amount infused
100pcs fluid infusion HF:HNO3 volume ratios are 1:4.5；Etching machine belt speed is 1.2 m/min.
The present invention can be at utmost compatible with existing conventional crystal silicon producing line, does not influence conventional crystal silicon producing line and normally produces,
Etching apparatus is not being changed completely and the maximum lift of PERC efficiency is realized in the controllable scope of cost.Conventional crystal silicon is etched
Technique is improved, on the premise of moisture film protection is opened, using the high Reducing thickness technique of conventional crystal silicon, producing line routine crystal silicon battery
Pressure is opened to be improved；PERC crystal silicons etching, back side acid throwing integration are realized simultaneously, have simplified processing step.Can be by changing
Become belt speed flexibly realize it is conventional etching, the PERC back sides acid throw be switched fast, so as to realize that PERC is compatible with existing producing line, greatly
The big risk and cost for reducing PERC and expanding line.
Embodiment
Embodiment one, conventional producing line polycrystal etching：
In conventional crystal silicon apparatus for production line, material mixture ratio in RENA machine etching grooves is set, etching groove just matches somebody with somebody HF:HNO3 bodies
Product is than being 1:5.5；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 volume ratios are 1:4, etching groove opens moisture film protection；Wherein,
The mass percent concentration of the nitric acid used is 70%, and the mass concentration ratio of hydrofluoric acid is 49%.In polycrystal etching technological process,
In the case of opening moisture film, using high Reducing thickness technique is etched, etching machine belt speed is 2.5 m/min, and etching duplicate removal scope is
0.18g, backside reflection rate scope are 29%.Contrast before and after the switching of conventional producing line polycrystal etching high Reducing thickness technique each 15 days flat
Equal electrical performance data, after the inventive method, every unit for electrical property parameters is obtained for lifting, and photoelectric transformation efficiency improves
0.03%, open-circuit voltage has carried 1.4%, and short circuit current lifting 0.46%, fill factor, curve factor has also obtained 0.2% lifting.Etching height subtracts
Thin amount technique causes silicon chip back surface to polish, because silicon chip back side specific surface area is small after polishing, few surface defects, while to light
Reflectivity also improves, and the optics and electricity for reducing battery lose, and open-circuit voltage, short circuit current have obtained carrying by a relatively large margin
Rise, and then improve the photoelectric transformation efficiency of battery.
Embodiment two, monocrystalline PERC etchings and polishing：
In conventional crystal silicon apparatus for production line, material mixture ratio in RENA machine etching grooves is set, etching groove just matches somebody with somebody HF:HNO3 bodies
Product is than being 1:6；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 volume ratios are 1:4.5, etching groove opens moisture film protection；Wherein,
The mass percent concentration of the nitric acid used is 70%, and the mass concentration ratio of hydrofluoric acid is 49%.In monocrystalline PERC technological processes,
In the case of moisture film is opened, using high Reducing thickness technique is etched, the monocrystalline silicon piece after diffusion passes through quarter with 1.2 m/min belt speed
Erosion machine, etching and the purpose of polishing can be reached simultaneously, with simplification of flowsheet.Under this process conditions, etching duplicate removal scope is
0.34g, backside reflection rate scope are 32%.Silicon chip normally produces according to PERC technological processes after etching and polishing, year-on-year conventional work
Skill single crystal battery, improved efficiency 1.3%, it is mainly reflected in out pressure lifting 3%, current boost nearly 4% or so, small lot experiment effect
Rate is higher than average level in industry.On PERC back of the body passivating techniques, using high Reducing thickness, etching machine belt speed is reduced to silicon chip synchronization
Perform etching and polished backside, requirement of the PERC batteries to polished backside technique can be met completely.
Claims (3)
1. the crystal silicon battery lithographic method and PERC battery acid polishing methods of a kind of hardware compatibility, it is characterized in that：Produced in crystal silicon
In line equipment, material mixture ratio in RENA machine etching grooves is set, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:4.5~7；Circulate fluid infusion
Amount is per 100pcs fluid infusion HF:HNO3 volume ratios are 1:3 ~ 5, etching groove opens moisture film protection；Wherein, the quality hundred of the nitric acid used
It is 70% to divide specific concentration, and the mass concentration ratio of hydrofluoric acid is 49%；Etched using high Reducing thickness method is etched, etching machine belt speed is
2.3 ~ 2.6m/min, silicon chip after diffusion is completed into polishing with 0.8 ~ 1.4 m/min belt speed by etching machine.
2. the crystal silicon battery lithographic method and PERC battery acid polishing methods of hardware compatibility according to claim 1, it is special
Sign is：In etching process, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:5.5；Amount infused is circulated per 100pcs fluid infusion HF:HNO3
Volume ratio is 1:4；Etching machine belt speed is 2.5 m/min.
3. the crystal silicon battery lithographic method and PERC battery acid polishing methods of hardware compatibility according to claim 2, it is special
Sign is：In polishing process, etching groove just matches somebody with somebody HF:HNO3 volume ratios are 1:6；Amount infused is circulated per 100pcs fluid infusion HF:HNO3 bodies
Product is than being 1:4.5；Etching machine belt speed is 1.2 m/min.
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| CN110010721B (en) * | 2019-03-22 | 2020-11-06 | 通威太阳能（合肥）有限公司 | SE-based alkali polishing high-efficiency PERC battery process |
| CN110190155A (en) * | 2019-06-28 | 2019-08-30 | 天合光能股份有限公司 | A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof |
| CN112768554B (en) * | 2020-12-30 | 2023-05-23 | 横店集团东磁股份有限公司 | Alkali polishing method based on back full-contact passivation material, crystalline silicon solar cell and preparation method |
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| CN101976705B (en) * | 2010-07-28 | 2012-05-16 | 常州天合光能有限公司 | Single-side acid-etching technology of crystalline silicon solar batteries |
| CN102157628B (en) * | 2011-03-22 | 2013-01-09 | 中弘光伏股份有限公司 | Method for manufacturing silicon wafer texture |
| CN103456837B (en) * | 2013-08-26 | 2016-05-11 | 镇江大全太阳能有限公司 | The manufacture method of local back surface field passivation solar cell |
| CN105576074A (en) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | Wet etching method for N-type double-sided battery |
| CN104900760A (en) * | 2015-05-27 | 2015-09-09 | 东方日升新能源股份有限公司 | Novel crystalline silicon cell wet process edge etching technology |
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Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee before: Jin Neng Clean-tech Co., Ltd |