CN105845778A - Crystalline silicon PERC cell alkali polishing method not influencing front surface - Google Patents
Crystalline silicon PERC cell alkali polishing method not influencing front surface Download PDFInfo
- Publication number
- CN105845778A CN105845778A CN201610338063.7A CN201610338063A CN105845778A CN 105845778 A CN105845778 A CN 105845778A CN 201610338063 A CN201610338063 A CN 201610338063A CN 105845778 A CN105845778 A CN 105845778A
- Authority
- CN
- China
- Prior art keywords
- polishing
- front surface
- wool
- silicon chip
- mass ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 29
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 21
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 21
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 21
- 239000003513 alkali Substances 0.000 title claims abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 238000007747 plating Methods 0.000 claims abstract description 14
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 235000008216 herbs Nutrition 0.000 claims description 24
- 210000002268 wool Anatomy 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010813 municipal solid waste Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the manufacturing technology of a photovoltaic solar cell and relates to a crystalline silicon PERC cell alkali polishing method not influencing the front surface. The method comprises the following steps: a) enabling an original silicon wafer to react for 160-180 s in a polishing solution, of which the KOH mass ratio is 10-20%, and the temperature is 78-83 DEG C, for polishing; b) plating a 100-120 nm SiNx film, serving as a mask, on the polished silicon wafer through PECVD; c) enabling the plated silicon wafer to be soaked in HF for 80-100s to remove the SiNx film plated on the front surface thoroughly; d) texturing the plate-removed silicon wafer in a texturing tank, of which the KOH mass ratio is 1.5-3%, and the temperature is 80-82 DEG C, the texturing time being 1100-1300 s; and e) finishing the follow-up steps by the textured silicon wafer according to a conventional PERC cell preparation method. The method can obtain a relatively-uniform polished surface, and meanwhile, can prevent causing influence on the front surface, thereby improving cell performance.
Description
Technical field
The invention belongs to the manufacturing technology of photovoltaic solar cell, relate to a kind of crystal silicon PERC battery alkali finishing method not affecting front surface.
Background technology
Solar energy power generating has great application prospect, photovoltaic industry development trend is for putting forward effect fall originally at present, and the efficiency of conventional structure battery is without bigger room for promotion, efficiently crystal silicon battery becomes the main flow of market research, the various p-type high-efficiency batteries that be currently there are by investigation, only back of the body passivating technique can maximize the performance improving battery on the basis of cost maintains an equal level.This technical products efficiency is high, it is high to open pressure, encapsulation loss is low, have the response of the more preferable low light level, is the strategic product seizing mainstream market.
PERC battery back of the body passivating technique is to deposit one layer of Al at battery back surface2O3Film, mainly passes through Al2O3Film realizes good passivation effect rich in the characteristic of negative charge to back surface, lbg is carried out the most overleaf on passivation stack film, print electrode on passivating film after grooving, enable metal electrode and silicon to form Ohmic contact by fluting so that photo-generated carrier is effectively collected.PERC battery back of the body passivating technique is mainly reflected in the significantly lifting of open-circuit voltage and short circuit current to the contribution of electrical property, and the most universal efficiency of monocrystalline PERC battery can reach 20.6-20.9%.
PERC battery can realize the maximum compatibility with current production line, ALD atomic layer deposition apparatus and lbg equipment is increased on the basis of routine produces line, PERC battery process production procedure at present is: wet method alkali making herbs into wool, low pressure diffusion, etching & polishing, ALD plating aluminium oxide film, PECVD positive/negative silicon nitride plated film, laser backside fluting, printing-sintering, testing, sorting, adds the operations such as polishing, ALD plating aluminium oxide film, PECVD back side coating film and backside laser fluting on conventional crystal silicon battery Process ba-sis.
Wherein, polished backside technique is the polishing before silicon chip back side is carried out plated film, and after polishing, back surface is smooth, add in solar spectrum the light of long wave band in the reflection of silicon chip back surface, increase transmission light and return the internal double absorption of silicon chip, improve IQE, add output electric current；After polishing, silicon chip back surface specific surface area reduces simultaneously, thus reduces the compound of back side photo-generated carrier, improves minority carrier life time, improves passivation effect simultaneously；The aluminum produced after silicon chip back surface field printing-sintering after polishing is reunited and is easier to contact with silicon, makes the effective area of back surface field alloy-layer increase.
The alkali glossing that row is commonly used in the trade at present, Yi Zhongshi: two-sided making herbs into wool, one side plating SiNx mask, single-sided polishing, HF remove mask；Another kind is: two-sided making herbs into wool, one side spread, go the back side PSG, PSG to make mask, single-sided polishing.But after first making herbs into wool under the process of polishing, it is more serious that burnishing surface hangs alkali, causes burnishing surface uneven；And in polishing, go in mask process, front can be caused certain impact, affect battery and respond at short-wave band.
Summary of the invention
The technical problem to be solved is, there is provided one can obtain more uniform polish face, turn avoid in polishing process simultaneously and the front carrying out technique is impacted, and then improve the crystal silicon PERC battery alkali finishing method not affecting front surface of battery performance.
The present invention does not affect the crystal silicon PERC battery alkali finishing method of front surface through following steps:
A. being 10% ~ 20% by former silicon chip at KOH mass ratio, temperature is to react 160 ~ 180s polishing in the polishing fluid of 78 ~ 83 DEG C, and gained alkali burnishing surface reflectance is 41% ~ 43%, and after polishing, silicon optical bench size is 18 ~ 22 μm；
B. after polishing, silicon chip plates 100 ~ 120nm SiNx film as mask by PECVD；
C. the silicon chip after plated film is crossed HF 80 ~ 100s thoroughly to remove front around plating SiNx film, it is ensured that the integrity of next step technical face matte, and can suitably reduce the time that silicon chip goes to soak in HF groove in mask process, it is ensured that front matte is unaffected；
D. by go around plating silicon chip KOH mass ratio be 1.5% ~ 3%, temperature be the texturing slot of 80 ~ 82 DEG C in carry out making herbs into wool, the making herbs into wool time is 1100 ~ 1300s, and gained matte pyramid size is 1 ~ 3 μm, and matte reflectance is 9% ~ 12%；
E. the silicon chip after making herbs into wool completes the step of postorder according to conventional PERC battery preparation method.
Preferably, in step a, in polishing fluid, KOH mass ratio is 10%, and temperature is 83 DEG C, response time 160s.
Preferably, in step d, silicon chip KOH mass ratio be 1.5%, temperature be the texturing slot of 80 DEG C in carry out making herbs into wool, the making herbs into wool time is 1100s.
The present invention uses making herbs into wool after first polishing in solaode manufacture process, the mode of the thick SiNx mask of plating, both can guarantee that and obtained more uniform polish face, turn avoid in polishing process simultaneously and the front carrying out technique is impacted, complex centre can be reduced further, increase spectral response, by the method for the present invention, battery can be opened pressure lifting 1 ~ 2mV, and then promote cell photoelectric conversion efficiency.
Detailed description of the invention
One, the embodiment of the present invention, first after polishing, PERC battery is prepared in making herbs into wool.
Step is as follows: take the original monocrystalline silicon piece of 800pcs, and it is 10% that former silicon chip is placed in KOH mass ratio, and temperature is to carry out twin polishing, polishing time 160s, two-sided duplicate removal 0.65g after polishing in the polishing fluid of 83 DEG C, and burnishing surface reflectance is 41%；After polishing, silicon chip plates 110nm SiNx film as mask by PECVD；Then silicon chip HF after plated film is soaked 100s thoroughly to remove front around plating SiNx film；By go around plating silicon chip KOH mass ratio be 1.5%, temperature be the texturing slot of 80 DEG C in carry out making herbs into wool, the making herbs into wool time is 1100s, and after making herbs into wool, one side duplicate removal is 0.32g, and reflectance is 9%；Then, the low pressure diffusion of postorder, wet etching, PECVD positive/negative silicon nitride plated film, laser backside fluting, silk screen printing, testing, sorting step are completed according to conventional PERC battery preparation method, it is thus achieved that the battery product of the embodiment of the present invention.
Two, comparative example, polishing preparation PERC battery after first making herbs into wool.
Step is as follows: take the original monocrystalline silicon piece of 800pcs, and it is 1.5% that former silicon chip is placed in KOH mass ratio, and temperature is to carry out making herbs into wool in the texturing slot of 80 DEG C, and the making herbs into wool time is 1100s, and after making herbs into wool, two-sided duplicate removal is 0.6g, and reflectance is 9%；Then go to front around plating SiNx film by PECVD plating 76um SiNx film as mask, HF immersion 3s silicon chip after making herbs into wool；Then by the silicon chip that goes around plating, to be placed in KOH mass ratio be 10%, and temperature is to carry out single-sided polishing, polishing time 160s, one side duplicate removal 0.37g after polishing in the polishing fluid of 83 DEG C, and burnishing surface reflectance is 41%；Then, the low pressure diffusion of postorder, wet etching, PECVD positive/negative silicon nitride plated film, laser backside fluting, silk screen printing, testing, sorting step are completed according to conventional PERC battery preparation method, it is thus achieved that the battery product of comparative example.
The two is carried out photoelectric properties and the comparison of QE spectral response, after test, finds that the product trash that comparative example method obtains is higher, predominantly leaks electricity more；The product current boost 41mA that the inventive method obtains, opens pressure and promotes 1.3mV, and final electrical property improves 0.65%.QE Data Comparison curve is it can be seen that first glossing short wave response is substantially better than first process for etching, less to positive influences.
Claims (3)
1. do not affect a crystal silicon PERC battery alkali finishing method for front surface, it is characterized in that: through following steps,
A. being 10% ~ 20% by former silicon chip at KOH mass ratio, temperature is to react 160 ~ 180s polishing in the polishing fluid of 78 ~ 83 DEG C；
B. after polishing, silicon chip plates 100 ~ 120nm SiNx film as mask by PECVD；
C. the silicon chip after plated film is crossed HF 80 ~ 100s thoroughly to remove front around plating SiNx film；
D. by go around plating silicon chip KOH mass ratio be 1.5% ~ 3%, temperature be the texturing slot of 80 ~ 82 DEG C in carry out making herbs into wool, the making herbs into wool time is 1100 ~ 1300s；
E. the silicon chip after making herbs into wool completes the step of postorder according to conventional PERC battery preparation method.
The crystal silicon PERC battery alkali finishing method not affecting front surface the most according to claim 1, is characterized in that: in step a, in polishing fluid, KOH mass ratio is 10%, and temperature is 83 DEG C, response time 160s.
The crystal silicon PERC battery alkali finishing method not affecting front surface the most according to claim 1, is characterized in that: in step d, silicon chip KOH mass ratio be 1.5%, temperature be the texturing slot of 80 DEG C in carry out making herbs into wool, the making herbs into wool time is 1100s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610338063.7A CN105845778A (en) | 2016-05-19 | 2016-05-19 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610338063.7A CN105845778A (en) | 2016-05-19 | 2016-05-19 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105845778A true CN105845778A (en) | 2016-08-10 |
Family
ID=56593826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610338063.7A Pending CN105845778A (en) | 2016-05-19 | 2016-05-19 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105845778A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
| CN106972079A (en) * | 2017-03-03 | 2017-07-21 | 浙江爱旭太阳能科技有限公司 | The cleaning method at the PERC silicon chip of solar cell back side |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109449248A (en) * | 2018-09-17 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of high efficiency SE-PERC solar battery |
| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| CN111129221A (en) * | 2019-12-24 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Alkaline polishing preparation method of PERC solar cell |
| CN111584343A (en) * | 2020-05-15 | 2020-08-25 | 常州启航能源科技有限公司 | Preparation method of monocrystalline silicon wafer capable of simultaneously realizing polishing and texturing |
| CN113241391A (en) * | 2021-04-29 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | PERC battery processing technology for reducing back surface field recombination loss |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993019A (en) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of localized back contact solar cell |
| CN105489709A (en) * | 2016-01-20 | 2016-04-13 | 上海大族新能源科技有限公司 | PERC solar cell and preparation method thereof |
| CN105529380A (en) * | 2014-12-09 | 2016-04-27 | 杭州大和热磁电子有限公司 | Preparation method for single crystalline silicon solar cell piece with polished back surface |
| CN105590993A (en) * | 2016-02-29 | 2016-05-18 | 中利腾晖光伏科技有限公司 | Production method of rear surface passivation solar cell |
-
2016
- 2016-05-19 CN CN201610338063.7A patent/CN105845778A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529380A (en) * | 2014-12-09 | 2016-04-27 | 杭州大和热磁电子有限公司 | Preparation method for single crystalline silicon solar cell piece with polished back surface |
| CN104993019A (en) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of localized back contact solar cell |
| CN105489709A (en) * | 2016-01-20 | 2016-04-13 | 上海大族新能源科技有限公司 | PERC solar cell and preparation method thereof |
| CN105590993A (en) * | 2016-02-29 | 2016-05-18 | 中利腾晖光伏科技有限公司 | Production method of rear surface passivation solar cell |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
| CN106972079A (en) * | 2017-03-03 | 2017-07-21 | 浙江爱旭太阳能科技有限公司 | The cleaning method at the PERC silicon chip of solar cell back side |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109449248A (en) * | 2018-09-17 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of high efficiency SE-PERC solar battery |
| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| CN111129221A (en) * | 2019-12-24 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Alkaline polishing preparation method of PERC solar cell |
| CN111584343A (en) * | 2020-05-15 | 2020-08-25 | 常州启航能源科技有限公司 | Preparation method of monocrystalline silicon wafer capable of simultaneously realizing polishing and texturing |
| CN113241391A (en) * | 2021-04-29 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | PERC battery processing technology for reducing back surface field recombination loss |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105845778A (en) | Crystalline silicon PERC cell alkali polishing method not influencing front surface | |
| TWI669830B (en) | Method for manufacturing local back contact solar cell | |
| WO2020057264A1 (en) | Solar cell and preparation method therefor | |
| CN109346536A (en) | A kind of contact passivation crystal silicon solar energy battery structure and preparation method | |
| CN102800745A (en) | Method for producing rear passivation double-sided solar cell | |
| CN107221568A (en) | A kind of preparation method of the selection two-sided PERC batteries of emitter stage | |
| CN103413860A (en) | Preparation method of local region back surface passivated crystalline silicon cell | |
| CN111129221A (en) | Alkaline polishing preparation method of PERC solar cell | |
| WO2023077772A1 (en) | Solar cell and preparation method therefor | |
| CN109509796A (en) | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery | |
| CN102569502A (en) | Wet method etching process | |
| CN109244149A (en) | PECVD back film layer structure based on PERC single crystal battery and preparation method | |
| CN116705915A (en) | Preparation method of novel double-sided TOPCON battery | |
| CN106024970B (en) | The crystal silicon battery lithographic method and PERC battery acid polishing methods of hardware compatibility | |
| CN113161449A (en) | Preparation method of PERC solar cell | |
| CN115176345A (en) | Solar cell laminated passivation structure and preparation method thereof | |
| CN102983214A (en) | Preparation method of selective emitter crystalline silicon solar cell | |
| CN103050573A (en) | Preparation method of back passivated battery | |
| CN105529380A (en) | Preparation method for single crystalline silicon solar cell piece with polished back surface | |
| CN112768534A (en) | Silicon oxide passivated PERC double-sided battery and preparation method thereof | |
| CN117012841A (en) | Crystal silicon bottom battery, preparation method thereof and laminated battery | |
| CN107046066A (en) | With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell | |
| CN214753787U (en) | Crystalline silicon solar cell and photovoltaic module comprising same | |
| CN209487518U (en) | A kind of backside passivation film for p-type monocrystalline PERC battery | |
| CN110544726A (en) | polycrystalline silicon solar cell with high photoelectric conversion efficiency and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Applicant after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Applicant before: Jin Neng Clean-tech Co., Ltd |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160810 |