CN209592050U - A kind of solar cell with passivation layer structure - Google Patents
A kind of solar cell with passivation layer structure Download PDFInfo
- Publication number
- CN209592050U CN209592050U CN201920739378.1U CN201920739378U CN209592050U CN 209592050 U CN209592050 U CN 209592050U CN 201920739378 U CN201920739378 U CN 201920739378U CN 209592050 U CN209592050 U CN 209592050U
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon substrate
- silicon
- back side
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of solar cells with passivation layer structure; positive outer passivation protection layer is set as silicon nitride film layer; the outer passivation protection layer at the back side is set as silicon oxynitride film or titanium oxide film layer; Al-BSF is printed on the silicon oxynitride film at the silicon substrate back side or titanium oxide film layer; the Al-BSF forms Ohmic contact with silicon substrate by laser grooving and connect, and the Al-BSF back side is provided with back electrode；Positive electrode is provided on the positive silicon nitride film layer of the silicon substrate, the positive electrode is connect with silicon substrate.The different outer passivation protection layer in the utility model front and back can preferably enhance the anti-PID performance of cell piece, and can significantly more efficient promotion cell photoelectric transfer efficiency.
Description
Technical field
The utility model relates to photovoltaic cell technical field, specially a kind of solar cell with passivation layer structure.
Background technique
In the prior art, there is surface-passivating dielectric double layer too for manufacturing application No. is " 200880124779.0 "
The method of positive energy battery and corresponding solar battery and remaining solar battery generally used.
The solar cell being commonly used is in use: never have silicon substrate front and back and meanwhile growth it is heavy
The structure of product silica coating, so that the anti-PID ability in the PERC double-side cell back side produced is poor, also, has no precedent
Growth deposits the passivation protection layer of two kinds of unlike materials respectively in the aluminum oxide film layer of silicon substrate front and back, causes
Existing passivation protection effect is excessively poor, and battery efficiency is low, and urgent need will improve.
Utility model content
The purpose of this utility model is to provide a kind of solar cells with passivation layer structure, to solve above-mentioned background skill
The problem of being proposed in art.
To achieve the above object, the utility model provides the following technical solutions:
A kind of solar cell with passivation layer structure, including silicon substrate, the silicon substrate front and back successively sink
Product has interior passivation layer, middle passivation layer and outer passivation protection layer, and positive outer passivation protection layer is set as silicon nitride film layer, the back side
Outer passivation protection layer is set as silicon oxynitride film or titanium oxide film layer；
Al-BSF, the aluminium back are printed on the silicon oxynitride film at the silicon substrate back side or titanium oxide film layer
Field forms Ohmic contact with silicon substrate by laser grooving and connect, and the Al-BSF back side is provided with back electrode；
Positive electrode is provided on the positive silicon nitride film layer of the silicon substrate, the positive electrode is connect with silicon substrate.
Compared with prior art, the utility model has the beneficial effects that
The utility model is respectively grown by the front, rear surface in silicon substrate deposited passivation layer in layer of silicon dioxide,
With high damage threshold and excellent optical property, it is combined with the passivation layer in aluminum oxide, enhances the positive back side well
Passivation effect, and the deposited silicon nitride film layer on positive middle passivation layer, depositing silicon oxy-nitride on middle passivation layer overleaf
Film layer or titanium oxide film layer, silicon nitride film layer have good passivation effect to silicon wafer, and silicon oxynitride film has silicon nitride
With the good characteristic of silica, titanium oxide film layer has goodization to the most of chemical substances in cell piece production process
Stability is learned, refractive index height and absorptivity are low, and the outer passivation protection layer that front and back is different, can preferably enhance
The anti-PID performance of cell piece, and can significantly more efficient promotion cell photoelectric transfer efficiency.
Detailed description of the invention
Fig. 1 is that the outer passivation protection layer of the utility model is set as the battery structure schematic diagram of silicon oxynitride film；
Fig. 2 is that the outer passivation protection layer of the utility model is set as the battery structure schematic diagram of titanium oxide film layer；
Fig. 3 is the preparation method flow diagram of the utility model；
Fig. 4 is the utility model one preferred preparation method flow diagram.
In figure: 1 silicon substrate, passivation layer in 2, passivation layer, 4 outer passivation protection layers, 41 silicon nitride film layers, 42 nitrogen oxidations in 3
Silicon film, 43 titanium oxide film layers, 5 Al-BSFs, 6 back electrodes, 7 positive electrodes.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1 to 4 is please referred to, the utility model provides a kind of technical solution:
A kind of solar cell with passivation layer structure, including silicon substrate 1,1 front and back of silicon substrate are sequentially depositing
There are interior passivation layer 2, middle passivation layer 3 and outer passivation protection layer 4, positive outer passivation protection layer 4 is set as silicon nitride film layer 41, back
The outer passivation protection layer 4 in face is set as silicon oxynitride film 42 or titanium oxide film layer 43；
Al-BSF 5, Al-BSF are printed on the silicon oxynitride film 42 at 1 back side of silicon substrate or titanium oxide film layer 43
5, which form Ohmic contact with silicon substrate 1 by laser grooving, connect, and 5 back side of Al-BSF is provided with back electrode 6；
It is provided with positive electrode 7 on the positive silicon nitride film layer 41 of silicon substrate 1, positive electrode 7 is connect with silicon substrate 1.
A kind of preparation method of the solar cell with passivation layer structure, comprising the following steps:
Step S01, suede structure making herbs into wool: is obtained by surface wool manufacturing using monocrystalline silicon piece；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion, preferably as one, In
After diffusion, selective doping is carried out by laser；
Step S03, it etches: edge PN junction being etched using plasma etching and is removed, and carries out anneal oxidation, anneal oxidation
Silica coating can be preferably prepared, preferably as one, plasma etching can be replaced using wet etching；
Step S04, passivation layer 2 in growth: passivation layer 2 in one layer of deposition, interior passivation are grown in 1 front and back of silicon substrate
Layer 2 is using thermal oxidation method or laughing gas oxidation or ozonisation or nitric acid solution chemical method deposition, and interior passivation layer 2 is set as titanium dioxide
Silicon film, interior passivation layer 2 can be passivated the dangling bonds of surface of crystalline silicon；
Step S05, passivation layer 3 in growth: the passivation layer 3 in one layer of growth deposition on the interior passivation layer 2 of front and back, in
Passivation layer 3 is deposited using PECVD or ALD or solid target through PVD method, and middle passivation layer 3 is set as aluminum oxide film layer
Or the film layer containing aluminum oxide, middle passivation layer 3 can prevent the mobile ion in passivation layer from making in external electric field and temperature
Movement under；
Step S06, it grows outer passivation protection layer 4: being grown respectively on the middle passivation layer 3 of front and back blunt outside one layer of deposition
Change protective layer 4, outer passivation protection layer 4 can be used as capping layer and optics antireflective functional layer, outer passivation protection layer 4 using PVD,
CVD ALD method deposition, positive outer passivation protection layer 4 are set as silicon nitride film layer 41, and silicon nitride film layer 41 can be to silicon
Piece front has good passivation effect, and the outer passivation protection layer 4 at the back side is set as silicon oxynitride film 42 or titanium dioxide film
Layer 43, silicon oxynitride film 42 have the good characteristic of good silicon nitride and silica, match with front side silicon nitride film layer 41
It closes, preferably enhances photoelectric conversion efficiency, its refractive index height of titanium oxide film layer 43 and absorptivity are low, can also preferably and just
Face silicon nitride film layer 41 is cooperated, and the anti-PID performance of cell piece is enhanced；
Step S07, laser slotting: to the silicon chip back side laser slotting after plated film；
Step S08, silk-screen printing: the back side and positive printing are completed by silk-screen printing, form Al-BSF 5, back electrode 6
With positive electrode 7, then it is sintered；
Step S09, LID: pass through light decay furnace or electrical pumping furnace；
Step S10, battery testing stepping finally sorted and packaged: is carried out to cell piece.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (1)
1. a kind of solar cell with passivation layer structure, including silicon substrate (1), it is characterised in that: silicon substrate (1) front
Interior passivation layer (2), middle passivation layer (3) and outer passivation protection layer (4), positive outer passivation protection layer have been sequentially depositing with the back side
(4) it is set as silicon nitride film layer (41), the outer passivation protection layer (4) at the back side is set as silicon oxynitride film (42) or titanium dioxide
Film layer (43)；
Al-BSF is printed on the silicon oxynitride film (42) at the silicon substrate (1) back side or titanium oxide film layer (43)
(5), the Al-BSF (5) forms Ohmic contact with silicon substrate (1) by laser grooving and connect, and Al-BSF (5) back side is provided with
Back electrode (6)；
It is provided on the silicon substrate (1) positive silicon nitride film layer (41) positive electrode (7), the positive electrode (7) and silicon
Substrate (1) connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920739378.1U CN209592050U (en) | 2019-05-22 | 2019-05-22 | A kind of solar cell with passivation layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920739378.1U CN209592050U (en) | 2019-05-22 | 2019-05-22 | A kind of solar cell with passivation layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209592050U true CN209592050U (en) | 2019-11-05 |
Family
ID=68347461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920739378.1U Active CN209592050U (en) | 2019-05-22 | 2019-05-22 | A kind of solar cell with passivation layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209592050U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047950A (en) * | 2019-05-22 | 2019-07-23 | 通威太阳能（安徽）有限公司 | A kind of solar cell and preparation method thereof with passivation layer structure |
| CN111883597A (en) * | 2020-07-30 | 2020-11-03 | 常州时创能源股份有限公司 | Composite passivation film of PERC (Positive-negative resistance) battery, preparation method and PERC battery |
| CN111883611A (en) * | 2020-06-09 | 2020-11-03 | 天津爱旭太阳能科技有限公司 | Preparation method of P-type monocrystalline silicon wafer with good printing performance |
| CN114420768A (en) * | 2020-10-13 | 2022-04-29 | 意诚新能(苏州)科技有限公司 | Back passivation film, preparation method and crystalline silicon solar cell |
-
2019
- 2019-05-22 CN CN201920739378.1U patent/CN209592050U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047950A (en) * | 2019-05-22 | 2019-07-23 | 通威太阳能（安徽）有限公司 | A kind of solar cell and preparation method thereof with passivation layer structure |
| CN111883611A (en) * | 2020-06-09 | 2020-11-03 | 天津爱旭太阳能科技有限公司 | Preparation method of P-type monocrystalline silicon wafer with good printing performance |
| CN111883597A (en) * | 2020-07-30 | 2020-11-03 | 常州时创能源股份有限公司 | Composite passivation film of PERC (Positive-negative resistance) battery, preparation method and PERC battery |
| CN114420768A (en) * | 2020-10-13 | 2022-04-29 | 意诚新能(苏州)科技有限公司 | Back passivation film, preparation method and crystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209592050U (en) | A kind of solar cell with passivation layer structure | |
| CN109888061B (en) | Alkali polishing efficient PERC battery and preparation process thereof | |
| EP4027395A1 (en) | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor | |
| CN102290473B (en) | Back point contact crystalline silicon solar cell and preparation method thereof | |
| CN102403399B (en) | Preparation method and structure of one-film and multipurpose masked texturing solar cell | |
| WO2023178918A1 (en) | Low-cost contact-passivation all-back electrode solar cell and preparation method therefor | |
| CN115621333B (en) | Back contact solar cell passivated by double-sided tunneling silicon oxide and preparation method thereof | |
| CN103996746B (en) | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced | |
| CN105070792B (en) | A kind of preparation method of the polycrystalline solar cell based on solwution method | |
| CN105810779B (en) | A kind of preparation method of PERC solar cells | |
| CN202585427U (en) | Passivation structure of solar cell | |
| CN110634964B (en) | Efficient crystalline silicon solar cell and preparation method thereof | |
| CN106711239A (en) | Preparation method of PERC solar battery and PERC solar battery | |
| CN109285897A (en) | A kind of efficient passivation contact crystalline silicon solar cell and preparation method thereof | |
| CN104934500A (en) | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN105355707A (en) | Efficient crystalline silicon solar cell and preparation method therefor | |
| CN206619599U (en) | A kind of passivation on double surfaces solar cell | |
| CN102751371A (en) | Solar thin film battery and manufacturing method thereof | |
| CN112466986A (en) | Alkali polishing manufacturing method of selective emitter battery | |
| CN109888060A (en) | A kind of solar cell and preparation method thereof with three layers of passivation layer structure | |
| CN110047950A (en) | A kind of solar cell and preparation method thereof with passivation layer structure | |
| CN202259320U (en) | Backside point contact crystalline silicon solar cell | |
| CN115176345A (en) | Solar cell laminated passivation structure and preparation method thereof | |
| CN210956692U (en) | PERC battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |