CN102983225A - Manufacturing process of local back surface field - Google Patents
Manufacturing process of local back surface field Download PDFInfo
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- CN102983225A CN102983225A CN2012105335110A CN201210533511A CN102983225A CN 102983225 A CN102983225 A CN 102983225A CN 2012105335110 A CN2012105335110 A CN 2012105335110A CN 201210533511 A CN201210533511 A CN 201210533511A CN 102983225 A CN102983225 A CN 102983225A
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- back surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a manufacturing process of a local back surface field, which comprises the following steps of a, washing and conducting texture surface making on a silicon wafer, b, diffusing the washed silicon wafer, c, removing back surface junctions of the diffused silicon wafer and polishing the back surface; d, depositing a silicon nitride anti-reflection film on the front surface of the silicon wafer with the polished back surface, depositing an amorphous silicon film, an aluminum oxide film or a silicon oxide film on the bottom layer of the back surface, and depositing a silicon nitride film on the upper layer, e, printing aluminum paste on the back surface and silver paste on the front surface, and f, forming the local back surface field by sintering. With the adoption of the manufacturing process of the local back surface field, self-opening of a passive film of the back surface field can be realized, production procedures are reduced, and the production cost is lowered.
Description
Technical field
The present invention relates to a kind of solar cell preparation technology, be specifically related to a kind of preparation technology of local back surface field.
Background technology
Reduce the production cost of solar cell, the efficient that improves solar cell is the target that the solar cell industry is pursued all the time.Consider from the angle that reduces cost, need to reduce the use amount of silicon materials, namely reduce the thickness of silicon chip.But along with reducing of silicon wafer thickness, the silicon chip surface state becomes more important to the impact of battery performance.At first, because silicon chip surface exists a large amount of dangling bonds and surface state.Need to carry out Passivation Treatment to silicon chip surface, with the recombination rate of the photo-generated carrier that reduces silicon chip surface, thereby improve the conversion efficiency of battery.
For p type single crystal silicon, surface passivation technique can be divided into two kinds: a kind of is to introduce impurity and stop charge carrier to the transmission on surface; Another kind is, deposit or the layer dielectric of growing to reduce surface density of states.
For the first: introduce impurity.What generally adopt at present is to starch then sintering formation back of the body surface field by method for printing screen printing Al.For P type silicon solar cell back surface passivation technique, according to principle, be 750-900 in sintering temperature
oIn the C scope, it is 1-3x10 that the back of the body surface field that Al mixes has peak concentration
18Cm
-3Although realized the recombination rate of 200cm/s at 2-3ohmcm Si material.Yet this recombination rate value is to be difficult to repeat in practice, also be not enough to realize 20% efficiency value, and the internal surface reflection rate also is between the 65-80%, and Al and the difference of Si material on thermal coefficient of expansion have caused the warpage of solar cell in the Al-Si alloy forming process.These shortcomings seem that at more and more thinner silicon chip problem is more outstanding.
For the second: metallization medium layer.Laboratory higher primary school crystal silicon solar energy battery can be by thermal oxidation SiO
2Growth technique suppresses compound on the surface of minority carrier, particularly on lightly doped back of the body surface, can reach low-down recombination-rate surface.Back of the body surface, the SiO of thermal oxide growth
2Layer is in conjunction with the Al film of evaporation, in process about 400
oStepping back after the processing about C can on the P of low-resistivity type silicon chip, be reduced to recombination-rate surface below the 20cm/S.In addition, the SiO on battery back of the body surface
2/ Al laminated construction can also be as the splendid reflector of crack photon in modern age, can significantly promote (back of the body surface) limit light characteristic and improve the short circuit current of solar cell, but because the body minority carrier life time of silicon materials is to the sensitiveness of high-temperature technology, especially for polysilicon, 900
oThe above high temperature oxidation process of C can cause the obvious decline of minority carrier life time usually.
There is the researcher once to study use PECVD method 400
oPreparation SiNx film replaces thermal oxidation method to prepare SiO under the temperature about C
2Same this method can obtain SiO with the thermal oxidation method preparation at the P of low-resistivity type silicon chip
2The lower recombination-rate surface that compares favourably.But when this technology was used for PERC (emitter and the back of the body surface passivation battery) battery of P type, the battery short circuit electric current was compared to adopting SiO
2Have significantly during passivation cell back of the body surface and descend.The reason that this phenomenon occurs is because in the SiNx rete, fixing positive charge density is larger, cause the P type silicon electrical property of SiNx below counter-rotating to occur, and the coupling of metal connecting contact area has caused short-circuit current density and fill factor, curve factor all obviously impaired in this inversion layer and the substrate, and this negative effect is known parasitic capacitance effect.Belgium microelectronics research center (IMEC), solar energy research institute of Hanover university (ISFH), the research institutions such as Fu Langen Hough solar energy system research institute (Fraunhofer ISE) adopt Al
2O
3Realized excellent passivation effect at the p-type silicon face.Fraunhofer ISE adopts this Al
2O
3Surface passivation technique has been realized the making of high-efficiency battery, and efficient is up to 23.9%.
In preparation back of the body surface passivation battery process, femtosecond laser, the corrosive slurries of adopting carry out perforate or laser sintered technique formation local aluminum back surface field to back of the body surface passivated membrane more, needing in actual production increases extra equipment and process step, and reality has increased production cost.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of the invention provides can reduce equipment investment, significantly do not increase the preparation technology of the local back surface field of cost when raising the efficiency.
In order to solve the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of preparation technology of local back surface field may further comprise the steps: a, with silicon chip cleaning and texturing; B, the silicon chip after will cleaning spread; C, the silicon chip after will spreading remove back of the body knot and will carry on the back surface finish; D, with the silicon chip front surface deposited silicon nitride antireflective coating of polished backside, back side layer deposition amorphous silicon, aluminium oxide or silicon oxide film, upper strata cvd nitride silicon thin film; E, at back of the body surface printing aluminium paste, front surface printed silver slurry; F, sintering form local back surface field.
Further, in deposition of amorphous silicon, aluminium oxide or silica, the silicon nitride film process, mask plate is set above battery front side in the described steps d, in deposition process, is subject to the part that mask plate stops and can deposit upper film, form perforate.
Again further, described mask plate is that the wire of 30-100 μ m or metal forming that width is 30-100 μ m form by diameter.
Further, be provided with the hole that is inverted trapezoidal on the described metal forming.
Compared with prior art, usefulness of the present invention is: the preparation technology of this local back surface field can realize the back surface field passivating film from perforate, reduced production process, reduced production cost.
Embodiment:
Describe the present invention below in conjunction with embodiment.
Example one:
With silicon chip cleaning and texturing; Silicon chip after cleaning is spread; Silicon chip after the diffusion is removed back of the body knot and will carry on the back surface finish; With the silicon chip front surface deposited silicon nitride antireflective coating of polished backside, backside deposition amorphous silicon, silicon nitride composite membrane in the deposit film process, are placed mask plate on silicon chip, and mask plate is that the high temperature alloy silk of 30 μ m forms by diameter.The zone that is blocked forms perforate about 20 μ m; At back of the body surface printing aluminium paste, front surface printed silver slurry, sintering forms local back surface field.
Example two:
With silicon chip cleaning and texturing; Silicon chip after cleaning is spread; Silicon chip after the diffusion is removed back of the body knot and will carry on the back surface finish; With the silicon chip front surface deposited silicon nitride antireflective coating of polished backside, backside deposition silica, silicon nitride composite membrane in the deposit film process, are placed mask plate on silicon chip, and mask plate is that the high temperature alloy silk of 40 μ m forms by diameter.The zone that is blocked forms perforate about 30 μ m; At back of the body surface printing aluminium paste, front surface printed silver slurry, sintering forms local back surface field.
Example three:
With silicon chip cleaning and texturing; Silicon chip after cleaning is spread; Silicon chip after the diffusion is removed back of the body knot and will carry on the back surface finish; Silicon chip front surface deposited silicon nitride antireflective coating with polished backside, backside deposition amorphous silicon, silicon nitride composite membrane, in the deposit film process, on silicon chip, place mask plate, mask plate is that the metal forming of 30 μ m forms by thickness, metal grid lines is inverted trapezoidal, above width be 50 μ m, below width be 30 μ m.The zone that is blocked forms perforate about 20 μ m; At back of the body surface printing aluminium paste, front surface printed silver slurry, sintering forms local back surface field.
Example four:
With silicon chip cleaning and texturing; Silicon chip after cleaning is spread; Silicon chip after the diffusion is removed back of the body knot and will carry on the back surface finish; Silicon chip front surface deposited silicon nitride antireflective coating with polished backside, backside deposition aluminium oxide, silicon nitride composite membrane, in the deposit film process, on silicon chip, place mask plate, mask plate is that the metal forming of 30 μ m forms by thickness, metal grid lines is inverted trapezoidal, above width be 60 μ m, below width be 40 μ m.The zone that is blocked forms perforate about 30 μ m; At back of the body surface printing aluminium paste, front surface printed silver slurry, sintering forms local back surface field.
Example five:
With silicon chip cleaning and texturing; Silicon chip after cleaning is spread; Silicon chip after the diffusion is removed back of the body knot and will carry on the back surface finish; Silicon chip front surface deposited silicon nitride antireflective coating with polished backside, backside deposition aluminium oxide, silicon nitride composite membrane in the deposit film process, are placed mask plate on silicon chip, mask plate is that the wire of 100 μ m forms by diameter, and the zone that is blocked forms the perforate about 80 μ m; At back of the body surface printing aluminium paste, front surface printed silver slurry, sintering forms local back surface field.
The preparation technology of this local back surface field can realize the back surface field passivating film from perforate, reduced production process, reduced production cost.
It is emphasized that: above only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment does.
Claims (4)
1. the preparation technology of a local back surface field is characterized in that, may further comprise the steps:
A, with silicon chip cleaning and texturing;
B, the silicon chip after will cleaning spread;
C, the silicon chip after will spreading remove back of the body knot and will carry on the back surface finish;
D, with the silicon chip front surface deposited silicon nitride antireflective coating of polished backside, back side layer deposition amorphous silicon, aluminium oxide or silicon oxide film, upper strata cvd nitride silicon thin film;
E, at back of the body surface printing aluminium paste, front surface printed silver slurry;
F, sintering form local back surface field.
2. the preparation technology of local back surface field according to claim 1, it is characterized in that, in the described steps d in deposition of amorphous silicon, aluminium oxide or silica, the silicon nitride film process, mask plate is set above battery front side, in deposition process, be subject to the part that mask plate stops and can not deposit upper film, form perforate.
3. the preparation technology of local back surface field according to claim 2 is characterized in that, described mask plate is that the wire of 30-100 μ m or metal forming that width is 30-100 μ m form by diameter.
4. the preparation technology of local back surface field according to claim 3 is characterized in that, is provided with the hole that is inverted trapezoidal on the described metal forming.
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| CN2012105335110A CN102983225A (en) | 2012-12-12 | 2012-12-12 | Manufacturing process of local back surface field |
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| CN2012105335110A CN102983225A (en) | 2012-12-12 | 2012-12-12 | Manufacturing process of local back surface field |
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| CN102983225A true CN102983225A (en) | 2013-03-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738304A (en) * | 2012-06-25 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
| CN105845776A (en) * | 2016-04-26 | 2016-08-10 | 泰州中来光电科技有限公司 | Local back surface N-type photovoltaic cell preparation method, local back surface N-type photovoltaic cell, local back surface N-type photovoltaic cell assembly and local back surface N-type photovoltaic cell system |
| WO2019091112A1 (en) * | 2017-11-10 | 2019-05-16 | 常州亿晶光电科技有限公司 | Preparation process without etching treatment for solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564311A (en) * | 2004-04-20 | 2005-01-12 | 西安交通大学 | Compounded passive tech of silicon semiconductor mesa device |
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN202585543U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | An electroforming mask plate |
-
2012
- 2012-12-12 CN CN2012105335110A patent/CN102983225A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564311A (en) * | 2004-04-20 | 2005-01-12 | 西安交通大学 | Compounded passive tech of silicon semiconductor mesa device |
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN202585543U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | An electroforming mask plate |
Non-Patent Citations (1)
| Title |
|---|
| 陶路平 等: "背面点接触结构在晶体硅太阳电池中的应用", 《材料导报》, vol. 25, no. 7, 10 July 2011 (2011-07-10), pages 124 - 129 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738304A (en) * | 2012-06-25 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
| CN102738304B (en) * | 2012-06-25 | 2015-01-07 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN103456837B (en) * | 2013-08-26 | 2016-05-11 | 镇江大全太阳能有限公司 | The manufacture method of local back surface field passivation solar cell |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
| CN103714879B (en) * | 2013-12-27 | 2016-08-17 | 苏州金瑞晨科技有限公司 | Nano-silicon boron slurry and the technique being applied to prepare full-shield boron back surface field thereof |
| CN105845776A (en) * | 2016-04-26 | 2016-08-10 | 泰州中来光电科技有限公司 | Local back surface N-type photovoltaic cell preparation method, local back surface N-type photovoltaic cell, local back surface N-type photovoltaic cell assembly and local back surface N-type photovoltaic cell system |
| WO2019091112A1 (en) * | 2017-11-10 | 2019-05-16 | 常州亿晶光电科技有限公司 | Preparation process without etching treatment for solar cell |
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Application publication date: 20130320 |